Growth of semiconductor silicon crystals
This paper focuses on the recent developments in Czochralski (CZ) crystal growth of silicon for large-scale integrated circuits (LSIs) and multi-crystalline silicon growth using a directional solidification method for solar cells. Growth of silicon crystals by the CZ method currently allows the grow...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Kakimoto, Koichi [verfasserIn] |
|---|
| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2016transfer abstract |
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| Umfang: |
13 |
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| Übergeordnetes Werk: |
Enthalten in: The influence of leadership behavior on miners’ work safety behavior - Cheng, Lianhua ELSEVIER, 2020, an internat. review journal, Amsterdam [u.a.] |
|---|---|
| Übergeordnetes Werk: |
volume:62 ; year:2016 ; number:2 ; pages:273-285 ; extent:13 |
| Links: |
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| DOI / URN: |
10.1016/j.pcrysgrow.2016.04.014 |
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| 520 | |a This paper focuses on the recent developments in Czochralski (CZ) crystal growth of silicon for large-scale integrated circuits (LSIs) and multi-crystalline silicon growth using a directional solidification method for solar cells. Growth of silicon crystals by the CZ method currently allows the growth of high-quality crystals that satisfy the device requirements of LSIs or power devices for electric cars. This paper covers how to obtain high-quality crystals with low impurity content and few point defects. It also covers the directional solidification method, which yields crystals with medium conversion efficiency for photovoltaic applications. We discuss the defects and impurities that degrade the efficiency and the steps to overcome these problems. | ||
| 520 | |a This paper focuses on the recent developments in Czochralski (CZ) crystal growth of silicon for large-scale integrated circuits (LSIs) and multi-crystalline silicon growth using a directional solidification method for solar cells. Growth of silicon crystals by the CZ method currently allows the growth of high-quality crystals that satisfy the device requirements of LSIs or power devices for electric cars. This paper covers how to obtain high-quality crystals with low impurity content and few point defects. It also covers the directional solidification method, which yields crystals with medium conversion efficiency for photovoltaic applications. We discuss the defects and impurities that degrade the efficiency and the steps to overcome these problems. | ||
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| 700 | 1 | |a Nakano, Satoshi |4 oth | |
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10.1016/j.pcrysgrow.2016.04.014 doi GBVA2016017000009.pica (DE-627)ELV024689890 (ELSEVIER)S0960-8974(16)30017-1 DE-627 ger DE-627 rakwb eng 540 540 DE-600 610 VZ 50.17 bkl 44.12 bkl Kakimoto, Koichi verfasserin aut Growth of semiconductor silicon crystals 2016transfer abstract 13 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier This paper focuses on the recent developments in Czochralski (CZ) crystal growth of silicon for large-scale integrated circuits (LSIs) and multi-crystalline silicon growth using a directional solidification method for solar cells. Growth of silicon crystals by the CZ method currently allows the growth of high-quality crystals that satisfy the device requirements of LSIs or power devices for electric cars. This paper covers how to obtain high-quality crystals with low impurity content and few point defects. It also covers the directional solidification method, which yields crystals with medium conversion efficiency for photovoltaic applications. We discuss the defects and impurities that degrade the efficiency and the steps to overcome these problems. This paper focuses on the recent developments in Czochralski (CZ) crystal growth of silicon for large-scale integrated circuits (LSIs) and multi-crystalline silicon growth using a directional solidification method for solar cells. Growth of silicon crystals by the CZ method currently allows the growth of high-quality crystals that satisfy the device requirements of LSIs or power devices for electric cars. This paper covers how to obtain high-quality crystals with low impurity content and few point defects. It also covers the directional solidification method, which yields crystals with medium conversion efficiency for photovoltaic applications. We discuss the defects and impurities that degrade the efficiency and the steps to overcome these problems. Gao, Bing oth Liu, Xin oth Nakano, Satoshi oth Enthalten in Elsevier Cheng, Lianhua ELSEVIER The influence of leadership behavior on miners’ work safety behavior 2020 an internat. review journal Amsterdam [u.a.] (DE-627)ELV004856635 volume:62 year:2016 number:2 pages:273-285 extent:13 https://doi.org/10.1016/j.pcrysgrow.2016.04.014 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 50.17 Sicherheitstechnik VZ 44.12 Arbeitsmedizin betriebliches Gesundheitswesen VZ AR 62 2016 2 273-285 13 045F 540 |
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10.1016/j.pcrysgrow.2016.04.014 doi GBVA2016017000009.pica (DE-627)ELV024689890 (ELSEVIER)S0960-8974(16)30017-1 DE-627 ger DE-627 rakwb eng 540 540 DE-600 610 VZ 50.17 bkl 44.12 bkl Kakimoto, Koichi verfasserin aut Growth of semiconductor silicon crystals 2016transfer abstract 13 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier This paper focuses on the recent developments in Czochralski (CZ) crystal growth of silicon for large-scale integrated circuits (LSIs) and multi-crystalline silicon growth using a directional solidification method for solar cells. Growth of silicon crystals by the CZ method currently allows the growth of high-quality crystals that satisfy the device requirements of LSIs or power devices for electric cars. This paper covers how to obtain high-quality crystals with low impurity content and few point defects. It also covers the directional solidification method, which yields crystals with medium conversion efficiency for photovoltaic applications. We discuss the defects and impurities that degrade the efficiency and the steps to overcome these problems. This paper focuses on the recent developments in Czochralski (CZ) crystal growth of silicon for large-scale integrated circuits (LSIs) and multi-crystalline silicon growth using a directional solidification method for solar cells. Growth of silicon crystals by the CZ method currently allows the growth of high-quality crystals that satisfy the device requirements of LSIs or power devices for electric cars. This paper covers how to obtain high-quality crystals with low impurity content and few point defects. It also covers the directional solidification method, which yields crystals with medium conversion efficiency for photovoltaic applications. We discuss the defects and impurities that degrade the efficiency and the steps to overcome these problems. Gao, Bing oth Liu, Xin oth Nakano, Satoshi oth Enthalten in Elsevier Cheng, Lianhua ELSEVIER The influence of leadership behavior on miners’ work safety behavior 2020 an internat. review journal Amsterdam [u.a.] (DE-627)ELV004856635 volume:62 year:2016 number:2 pages:273-285 extent:13 https://doi.org/10.1016/j.pcrysgrow.2016.04.014 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 50.17 Sicherheitstechnik VZ 44.12 Arbeitsmedizin betriebliches Gesundheitswesen VZ AR 62 2016 2 273-285 13 045F 540 |
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Growth of semiconductor silicon crystals |
| abstract |
This paper focuses on the recent developments in Czochralski (CZ) crystal growth of silicon for large-scale integrated circuits (LSIs) and multi-crystalline silicon growth using a directional solidification method for solar cells. Growth of silicon crystals by the CZ method currently allows the growth of high-quality crystals that satisfy the device requirements of LSIs or power devices for electric cars. This paper covers how to obtain high-quality crystals with low impurity content and few point defects. It also covers the directional solidification method, which yields crystals with medium conversion efficiency for photovoltaic applications. We discuss the defects and impurities that degrade the efficiency and the steps to overcome these problems. |
| abstractGer |
This paper focuses on the recent developments in Czochralski (CZ) crystal growth of silicon for large-scale integrated circuits (LSIs) and multi-crystalline silicon growth using a directional solidification method for solar cells. Growth of silicon crystals by the CZ method currently allows the growth of high-quality crystals that satisfy the device requirements of LSIs or power devices for electric cars. This paper covers how to obtain high-quality crystals with low impurity content and few point defects. It also covers the directional solidification method, which yields crystals with medium conversion efficiency for photovoltaic applications. We discuss the defects and impurities that degrade the efficiency and the steps to overcome these problems. |
| abstract_unstemmed |
This paper focuses on the recent developments in Czochralski (CZ) crystal growth of silicon for large-scale integrated circuits (LSIs) and multi-crystalline silicon growth using a directional solidification method for solar cells. Growth of silicon crystals by the CZ method currently allows the growth of high-quality crystals that satisfy the device requirements of LSIs or power devices for electric cars. This paper covers how to obtain high-quality crystals with low impurity content and few point defects. It also covers the directional solidification method, which yields crystals with medium conversion efficiency for photovoltaic applications. We discuss the defects and impurities that degrade the efficiency and the steps to overcome these problems. |
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| title_short |
Growth of semiconductor silicon crystals |
| url |
https://doi.org/10.1016/j.pcrysgrow.2016.04.014 |
| remote_bool |
true |
| author2 |
Gao, Bing Liu, Xin Nakano, Satoshi |
| author2Str |
Gao, Bing Liu, Xin Nakano, Satoshi |
| ppnlink |
ELV004856635 |
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| doi_str |
10.1016/j.pcrysgrow.2016.04.014 |
| up_date |
2024-07-06T22:05:26.132Z |
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1803868990217388032 |
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|
| score |
7.400118 |