High operating temperature SWIR p+–n FPA based on MBE-grown HgCdTe/Si(013)
• Temperature dependence of the reverse currents of p +–n junctions has been studied. • SWIR FPA based on In-doped HgCdTe/Si(013) heterostructure has been fabricated. • Spectral characteristic and detectivity histogram of typical SWIR FPA has been measured. • NETD of SWIR FPA has been measured to be...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Bazovkin, V.M. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2016 |
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| Schlagwörter: |
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| Umfang: |
3 |
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| Übergeordnetes Werk: |
Enthalten in: 274: Low-dose aspirin improves trophoblastic function in early-onset pre-eclampsia - da Silva Costa, Fabricio ELSEVIER, 2014, an international research journal, Amsterdam [u.a.] |
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| Übergeordnetes Werk: |
volume:76 ; year:2016 ; pages:72-74 ; extent:3 |
| Links: |
|---|
| DOI / URN: |
10.1016/j.infrared.2016.01.018 |
|---|
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ELV02478690X |
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| 520 | |a • Temperature dependence of the reverse currents of p +–n junctions has been studied. • SWIR FPA based on In-doped HgCdTe/Si(013) heterostructure has been fabricated. • Spectral characteristic and detectivity histogram of typical SWIR FPA has been measured. • NETD of SWIR FPA has been measured to be ∼40mK at 170K which corresponds to theoretical calculations. | ||
| 650 | 7 | |a Heterostructure |2 Elsevier | |
| 650 | 7 | |a SWIR FPA |2 Elsevier | |
| 650 | 7 | |a High operating temperature |2 Elsevier | |
| 650 | 7 | |a p-on-n photodiode |2 Elsevier | |
| 650 | 7 | |a Molecular-beam epitaxy (MBE) |2 Elsevier | |
| 650 | 7 | |a HgCdTe (MCT) |2 Elsevier | |
| 700 | 1 | |a Dvoretsky, S.A. |4 oth | |
| 700 | 1 | |a Guzev, A.A. |4 oth | |
| 700 | 1 | |a Kovchavtsev, A.P. |4 oth | |
| 700 | 1 | |a Marin, D.V. |4 oth | |
| 700 | 1 | |a Polovinkin, V.G. |4 oth | |
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| 700 | 1 | |a Tsarenko, A.V. |4 oth | |
| 700 | 1 | |a Vasil’ev, V.V. |4 oth | |
| 700 | 1 | |a Varavin, V.S. |4 oth | |
| 700 | 1 | |a Yakushev, M.V. |4 oth | |
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10.1016/j.infrared.2016.01.018 doi GBV00000000000154A.pica (DE-627)ELV02478690X (ELSEVIER)S1350-4495(15)30186-9 DE-627 ger DE-627 rakwb eng 530 530 DE-600 610 VZ 570 VZ BIODIV DE-30 fid Bazovkin, V.M. verfasserin aut High operating temperature SWIR p+–n FPA based on MBE-grown HgCdTe/Si(013) 2016 3 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier • Temperature dependence of the reverse currents of p +–n junctions has been studied. • SWIR FPA based on In-doped HgCdTe/Si(013) heterostructure has been fabricated. • Spectral characteristic and detectivity histogram of typical SWIR FPA has been measured. • NETD of SWIR FPA has been measured to be ∼40mK at 170K which corresponds to theoretical calculations. Heterostructure Elsevier SWIR FPA Elsevier High operating temperature Elsevier p-on-n photodiode Elsevier Molecular-beam epitaxy (MBE) Elsevier HgCdTe (MCT) Elsevier Dvoretsky, S.A. oth Guzev, A.A. oth Kovchavtsev, A.P. oth Marin, D.V. oth Polovinkin, V.G. oth Sabinina, I.V. oth Sidorov, G.Yu. oth Tsarenko, A.V. oth Vasil’ev, V.V. oth Varavin, V.S. oth Yakushev, M.V. oth Enthalten in Elsevier Science da Silva Costa, Fabricio ELSEVIER 274: Low-dose aspirin improves trophoblastic function in early-onset pre-eclampsia 2014 an international research journal Amsterdam [u.a.] (DE-627)ELV012544043 volume:76 year:2016 pages:72-74 extent:3 https://doi.org/10.1016/j.infrared.2016.01.018 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U FID-BIODIV SSG-OLC-PHA GBV_ILN_22 GBV_ILN_176 GBV_ILN_285 GBV_ILN_2003 GBV_ILN_2016 GBV_ILN_2563 AR 76 2016 72-74 3 045F 530 |
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10.1016/j.infrared.2016.01.018 doi GBV00000000000154A.pica (DE-627)ELV02478690X (ELSEVIER)S1350-4495(15)30186-9 DE-627 ger DE-627 rakwb eng 530 530 DE-600 610 VZ 570 VZ BIODIV DE-30 fid Bazovkin, V.M. verfasserin aut High operating temperature SWIR p+–n FPA based on MBE-grown HgCdTe/Si(013) 2016 3 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier • Temperature dependence of the reverse currents of p +–n junctions has been studied. • SWIR FPA based on In-doped HgCdTe/Si(013) heterostructure has been fabricated. • Spectral characteristic and detectivity histogram of typical SWIR FPA has been measured. • NETD of SWIR FPA has been measured to be ∼40mK at 170K which corresponds to theoretical calculations. Heterostructure Elsevier SWIR FPA Elsevier High operating temperature Elsevier p-on-n photodiode Elsevier Molecular-beam epitaxy (MBE) Elsevier HgCdTe (MCT) Elsevier Dvoretsky, S.A. oth Guzev, A.A. oth Kovchavtsev, A.P. oth Marin, D.V. oth Polovinkin, V.G. oth Sabinina, I.V. oth Sidorov, G.Yu. oth Tsarenko, A.V. oth Vasil’ev, V.V. oth Varavin, V.S. oth Yakushev, M.V. oth Enthalten in Elsevier Science da Silva Costa, Fabricio ELSEVIER 274: Low-dose aspirin improves trophoblastic function in early-onset pre-eclampsia 2014 an international research journal Amsterdam [u.a.] (DE-627)ELV012544043 volume:76 year:2016 pages:72-74 extent:3 https://doi.org/10.1016/j.infrared.2016.01.018 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U FID-BIODIV SSG-OLC-PHA GBV_ILN_22 GBV_ILN_176 GBV_ILN_285 GBV_ILN_2003 GBV_ILN_2016 GBV_ILN_2563 AR 76 2016 72-74 3 045F 530 |
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10.1016/j.infrared.2016.01.018 doi GBV00000000000154A.pica (DE-627)ELV02478690X (ELSEVIER)S1350-4495(15)30186-9 DE-627 ger DE-627 rakwb eng 530 530 DE-600 610 VZ 570 VZ BIODIV DE-30 fid Bazovkin, V.M. verfasserin aut High operating temperature SWIR p+–n FPA based on MBE-grown HgCdTe/Si(013) 2016 3 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier • Temperature dependence of the reverse currents of p +–n junctions has been studied. • SWIR FPA based on In-doped HgCdTe/Si(013) heterostructure has been fabricated. • Spectral characteristic and detectivity histogram of typical SWIR FPA has been measured. • NETD of SWIR FPA has been measured to be ∼40mK at 170K which corresponds to theoretical calculations. Heterostructure Elsevier SWIR FPA Elsevier High operating temperature Elsevier p-on-n photodiode Elsevier Molecular-beam epitaxy (MBE) Elsevier HgCdTe (MCT) Elsevier Dvoretsky, S.A. oth Guzev, A.A. oth Kovchavtsev, A.P. oth Marin, D.V. oth Polovinkin, V.G. oth Sabinina, I.V. oth Sidorov, G.Yu. oth Tsarenko, A.V. oth Vasil’ev, V.V. oth Varavin, V.S. oth Yakushev, M.V. oth Enthalten in Elsevier Science da Silva Costa, Fabricio ELSEVIER 274: Low-dose aspirin improves trophoblastic function in early-onset pre-eclampsia 2014 an international research journal Amsterdam [u.a.] (DE-627)ELV012544043 volume:76 year:2016 pages:72-74 extent:3 https://doi.org/10.1016/j.infrared.2016.01.018 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U FID-BIODIV SSG-OLC-PHA GBV_ILN_22 GBV_ILN_176 GBV_ILN_285 GBV_ILN_2003 GBV_ILN_2016 GBV_ILN_2563 AR 76 2016 72-74 3 045F 530 |
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10.1016/j.infrared.2016.01.018 doi GBV00000000000154A.pica (DE-627)ELV02478690X (ELSEVIER)S1350-4495(15)30186-9 DE-627 ger DE-627 rakwb eng 530 530 DE-600 610 VZ 570 VZ BIODIV DE-30 fid Bazovkin, V.M. verfasserin aut High operating temperature SWIR p+–n FPA based on MBE-grown HgCdTe/Si(013) 2016 3 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier • Temperature dependence of the reverse currents of p +–n junctions has been studied. • SWIR FPA based on In-doped HgCdTe/Si(013) heterostructure has been fabricated. • Spectral characteristic and detectivity histogram of typical SWIR FPA has been measured. • NETD of SWIR FPA has been measured to be ∼40mK at 170K which corresponds to theoretical calculations. Heterostructure Elsevier SWIR FPA Elsevier High operating temperature Elsevier p-on-n photodiode Elsevier Molecular-beam epitaxy (MBE) Elsevier HgCdTe (MCT) Elsevier Dvoretsky, S.A. oth Guzev, A.A. oth Kovchavtsev, A.P. oth Marin, D.V. oth Polovinkin, V.G. oth Sabinina, I.V. oth Sidorov, G.Yu. oth Tsarenko, A.V. oth Vasil’ev, V.V. oth Varavin, V.S. oth Yakushev, M.V. oth Enthalten in Elsevier Science da Silva Costa, Fabricio ELSEVIER 274: Low-dose aspirin improves trophoblastic function in early-onset pre-eclampsia 2014 an international research journal Amsterdam [u.a.] (DE-627)ELV012544043 volume:76 year:2016 pages:72-74 extent:3 https://doi.org/10.1016/j.infrared.2016.01.018 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U FID-BIODIV SSG-OLC-PHA GBV_ILN_22 GBV_ILN_176 GBV_ILN_285 GBV_ILN_2003 GBV_ILN_2016 GBV_ILN_2563 AR 76 2016 72-74 3 045F 530 |
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10.1016/j.infrared.2016.01.018 doi GBV00000000000154A.pica (DE-627)ELV02478690X (ELSEVIER)S1350-4495(15)30186-9 DE-627 ger DE-627 rakwb eng 530 530 DE-600 610 VZ 570 VZ BIODIV DE-30 fid Bazovkin, V.M. verfasserin aut High operating temperature SWIR p+–n FPA based on MBE-grown HgCdTe/Si(013) 2016 3 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier • Temperature dependence of the reverse currents of p +–n junctions has been studied. • SWIR FPA based on In-doped HgCdTe/Si(013) heterostructure has been fabricated. • Spectral characteristic and detectivity histogram of typical SWIR FPA has been measured. • NETD of SWIR FPA has been measured to be ∼40mK at 170K which corresponds to theoretical calculations. Heterostructure Elsevier SWIR FPA Elsevier High operating temperature Elsevier p-on-n photodiode Elsevier Molecular-beam epitaxy (MBE) Elsevier HgCdTe (MCT) Elsevier Dvoretsky, S.A. oth Guzev, A.A. oth Kovchavtsev, A.P. oth Marin, D.V. oth Polovinkin, V.G. oth Sabinina, I.V. oth Sidorov, G.Yu. oth Tsarenko, A.V. oth Vasil’ev, V.V. oth Varavin, V.S. oth Yakushev, M.V. oth Enthalten in Elsevier Science da Silva Costa, Fabricio ELSEVIER 274: Low-dose aspirin improves trophoblastic function in early-onset pre-eclampsia 2014 an international research journal Amsterdam [u.a.] (DE-627)ELV012544043 volume:76 year:2016 pages:72-74 extent:3 https://doi.org/10.1016/j.infrared.2016.01.018 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U FID-BIODIV SSG-OLC-PHA GBV_ILN_22 GBV_ILN_176 GBV_ILN_285 GBV_ILN_2003 GBV_ILN_2016 GBV_ILN_2563 AR 76 2016 72-74 3 045F 530 |
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Bazovkin, V.M. @@aut@@ Dvoretsky, S.A. @@oth@@ Guzev, A.A. @@oth@@ Kovchavtsev, A.P. @@oth@@ Marin, D.V. @@oth@@ Polovinkin, V.G. @@oth@@ Sabinina, I.V. @@oth@@ Sidorov, G.Yu. @@oth@@ Tsarenko, A.V. @@oth@@ Vasil’ev, V.V. @@oth@@ Varavin, V.S. @@oth@@ Yakushev, M.V. @@oth@@ |
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274: Low-dose aspirin improves trophoblastic function in early-onset pre-eclampsia |
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274: Low-dose aspirin improves trophoblastic function in early-onset pre-eclampsia |
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High operating temperature SWIR p+–n FPA based on MBE-grown HgCdTe/Si(013) |
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High operating temperature SWIR p+–n FPA based on MBE-grown HgCdTe/Si(013) |
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Bazovkin, V.M. |
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274: Low-dose aspirin improves trophoblastic function in early-onset pre-eclampsia |
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274: Low-dose aspirin improves trophoblastic function in early-onset pre-eclampsia |
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10.1016/j.infrared.2016.01.018 |
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high operating temperature swir p+–n fpa based on mbe-grown hgcdte/si(013) |
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High operating temperature SWIR p+–n FPA based on MBE-grown HgCdTe/Si(013) |
| abstract |
• Temperature dependence of the reverse currents of p +–n junctions has been studied. • SWIR FPA based on In-doped HgCdTe/Si(013) heterostructure has been fabricated. • Spectral characteristic and detectivity histogram of typical SWIR FPA has been measured. • NETD of SWIR FPA has been measured to be ∼40mK at 170K which corresponds to theoretical calculations. |
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• Temperature dependence of the reverse currents of p +–n junctions has been studied. • SWIR FPA based on In-doped HgCdTe/Si(013) heterostructure has been fabricated. • Spectral characteristic and detectivity histogram of typical SWIR FPA has been measured. • NETD of SWIR FPA has been measured to be ∼40mK at 170K which corresponds to theoretical calculations. |
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• Temperature dependence of the reverse currents of p +–n junctions has been studied. • SWIR FPA based on In-doped HgCdTe/Si(013) heterostructure has been fabricated. • Spectral characteristic and detectivity histogram of typical SWIR FPA has been measured. • NETD of SWIR FPA has been measured to be ∼40mK at 170K which corresponds to theoretical calculations. |
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High operating temperature SWIR p+–n FPA based on MBE-grown HgCdTe/Si(013) |
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Dvoretsky, S.A. Guzev, A.A. Kovchavtsev, A.P. Marin, D.V. Polovinkin, V.G. Sabinina, I.V. Sidorov, G.Yu Tsarenko, A.V. Vasil’ev, V.V. Varavin, V.S. Yakushev, M.V. |
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