TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern
A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the char...
Ausführliche Beschreibung
Autor*in: |
Mynbaeva, M.G. [verfasserIn] |
---|
Format: |
E-Artikel |
---|---|
Sprache: |
Englisch |
Erschienen: |
2016transfer abstract |
---|
Schlagwörter: |
A3. Hydride vapor phase epitaxy B2. Semiconducting III–V materials |
---|
Umfang: |
7 |
---|
Übergeordnetes Werk: |
Enthalten in: The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting - 2011, Amsterdam [u.a.] |
---|---|
Übergeordnetes Werk: |
volume:445 ; year:2016 ; day:1 ; month:07 ; pages:30-36 ; extent:7 |
Links: |
---|
DOI / URN: |
10.1016/j.jcrysgro.2016.04.011 |
---|
Katalog-ID: |
ELV024873411 |
---|
LEADER | 01000caa a22002652 4500 | ||
---|---|---|---|
001 | ELV024873411 | ||
003 | DE-627 | ||
005 | 20230625143709.0 | ||
007 | cr uuu---uuuuu | ||
008 | 180603s2016 xx |||||o 00| ||eng c | ||
024 | 7 | |a 10.1016/j.jcrysgro.2016.04.011 |2 doi | |
028 | 5 | 2 | |a GBVA2016022000008.pica |
035 | |a (DE-627)ELV024873411 | ||
035 | |a (ELSEVIER)S0022-0248(16)30152-X | ||
040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
041 | |a eng | ||
082 | 0 | |a 540 | |
082 | 0 | 4 | |a 540 |q DE-600 |
082 | 0 | 4 | |a 610 |q VZ |
082 | 0 | 4 | |a 570 |a 540 |q VZ |
100 | 1 | |a Mynbaeva, M.G. |e verfasserin |4 aut | |
245 | 1 | 0 | |a TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern |
264 | 1 | |c 2016transfer abstract | |
300 | |a 7 | ||
336 | |a nicht spezifiziert |b zzz |2 rdacontent | ||
337 | |a nicht spezifiziert |b z |2 rdamedia | ||
338 | |a nicht spezifiziert |b zu |2 rdacarrier | ||
520 | |a A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the character of the defect structure of HVPE-grown films was determined by the configuration of the column pattern in the substrate. By choosing the proper pattern, the reduction in the density of threading dislocations in the films by two orders of magnitude (in respect to the substrate material), down to the value of 107 cm−2, was achieved. | ||
520 | |a A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the character of the defect structure of HVPE-grown films was determined by the configuration of the column pattern in the substrate. By choosing the proper pattern, the reduction in the density of threading dislocations in the films by two orders of magnitude (in respect to the substrate material), down to the value of 107 cm−2, was achieved. | ||
650 | 7 | |a A3. Hydride vapor phase epitaxy |2 Elsevier | |
650 | 7 | |a B2. Semiconducting III–V materials |2 Elsevier | |
650 | 7 | |a A3. Metalorganic chemical vapor deposition |2 Elsevier | |
650 | 7 | |a A1. Defects |2 Elsevier | |
700 | 1 | |a Kremleva, A.V. |4 oth | |
700 | 1 | |a Kirilenko, D.A. |4 oth | |
700 | 1 | |a Sitnikova, A.A. |4 oth | |
700 | 1 | |a Pechnikov, A.I. |4 oth | |
700 | 1 | |a Mynbaev, K.D. |4 oth | |
700 | 1 | |a Nikolaev, V.I. |4 oth | |
700 | 1 | |a Bougrov, V.E. |4 oth | |
700 | 1 | |a Lipsanen, H. |4 oth | |
700 | 1 | |a Romanov, A.E. |4 oth | |
773 | 0 | 8 | |i Enthalten in |n Elsevier |t The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting |d 2011 |g Amsterdam [u.a.] |w (DE-627)ELV010662650 |
773 | 1 | 8 | |g volume:445 |g year:2016 |g day:1 |g month:07 |g pages:30-36 |g extent:7 |
856 | 4 | 0 | |u https://doi.org/10.1016/j.jcrysgro.2016.04.011 |3 Volltext |
912 | |a GBV_USEFLAG_U | ||
912 | |a GBV_ELV | ||
912 | |a SYSFLAG_U | ||
912 | |a SSG-OLC-PHA | ||
912 | |a GBV_ILN_22 | ||
912 | |a GBV_ILN_40 | ||
912 | |a GBV_ILN_105 | ||
951 | |a AR | ||
952 | |d 445 |j 2016 |b 1 |c 0701 |h 30-36 |g 7 | ||
953 | |2 045F |a 540 |
author_variant |
m m mm |
---|---|
matchkey_str |
mynbaevamgkremlevaavkirilenkodasitnikova:2016----:esuyfeettutrognptxaflsrwognlosbtae |
hierarchy_sort_str |
2016transfer abstract |
publishDate |
2016 |
allfields |
10.1016/j.jcrysgro.2016.04.011 doi GBVA2016022000008.pica (DE-627)ELV024873411 (ELSEVIER)S0022-0248(16)30152-X DE-627 ger DE-627 rakwb eng 540 540 DE-600 610 VZ 570 540 VZ Mynbaeva, M.G. verfasserin aut TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern 2016transfer abstract 7 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the character of the defect structure of HVPE-grown films was determined by the configuration of the column pattern in the substrate. By choosing the proper pattern, the reduction in the density of threading dislocations in the films by two orders of magnitude (in respect to the substrate material), down to the value of 107 cm−2, was achieved. A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the character of the defect structure of HVPE-grown films was determined by the configuration of the column pattern in the substrate. By choosing the proper pattern, the reduction in the density of threading dislocations in the films by two orders of magnitude (in respect to the substrate material), down to the value of 107 cm−2, was achieved. A3. Hydride vapor phase epitaxy Elsevier B2. Semiconducting III–V materials Elsevier A3. Metalorganic chemical vapor deposition Elsevier A1. Defects Elsevier Kremleva, A.V. oth Kirilenko, D.A. oth Sitnikova, A.A. oth Pechnikov, A.I. oth Mynbaev, K.D. oth Nikolaev, V.I. oth Bougrov, V.E. oth Lipsanen, H. oth Romanov, A.E. oth Enthalten in Elsevier The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting 2011 Amsterdam [u.a.] (DE-627)ELV010662650 volume:445 year:2016 day:1 month:07 pages:30-36 extent:7 https://doi.org/10.1016/j.jcrysgro.2016.04.011 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_22 GBV_ILN_40 GBV_ILN_105 AR 445 2016 1 0701 30-36 7 045F 540 |
spelling |
10.1016/j.jcrysgro.2016.04.011 doi GBVA2016022000008.pica (DE-627)ELV024873411 (ELSEVIER)S0022-0248(16)30152-X DE-627 ger DE-627 rakwb eng 540 540 DE-600 610 VZ 570 540 VZ Mynbaeva, M.G. verfasserin aut TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern 2016transfer abstract 7 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the character of the defect structure of HVPE-grown films was determined by the configuration of the column pattern in the substrate. By choosing the proper pattern, the reduction in the density of threading dislocations in the films by two orders of magnitude (in respect to the substrate material), down to the value of 107 cm−2, was achieved. A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the character of the defect structure of HVPE-grown films was determined by the configuration of the column pattern in the substrate. By choosing the proper pattern, the reduction in the density of threading dislocations in the films by two orders of magnitude (in respect to the substrate material), down to the value of 107 cm−2, was achieved. A3. Hydride vapor phase epitaxy Elsevier B2. Semiconducting III–V materials Elsevier A3. Metalorganic chemical vapor deposition Elsevier A1. Defects Elsevier Kremleva, A.V. oth Kirilenko, D.A. oth Sitnikova, A.A. oth Pechnikov, A.I. oth Mynbaev, K.D. oth Nikolaev, V.I. oth Bougrov, V.E. oth Lipsanen, H. oth Romanov, A.E. oth Enthalten in Elsevier The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting 2011 Amsterdam [u.a.] (DE-627)ELV010662650 volume:445 year:2016 day:1 month:07 pages:30-36 extent:7 https://doi.org/10.1016/j.jcrysgro.2016.04.011 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_22 GBV_ILN_40 GBV_ILN_105 AR 445 2016 1 0701 30-36 7 045F 540 |
allfields_unstemmed |
10.1016/j.jcrysgro.2016.04.011 doi GBVA2016022000008.pica (DE-627)ELV024873411 (ELSEVIER)S0022-0248(16)30152-X DE-627 ger DE-627 rakwb eng 540 540 DE-600 610 VZ 570 540 VZ Mynbaeva, M.G. verfasserin aut TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern 2016transfer abstract 7 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the character of the defect structure of HVPE-grown films was determined by the configuration of the column pattern in the substrate. By choosing the proper pattern, the reduction in the density of threading dislocations in the films by two orders of magnitude (in respect to the substrate material), down to the value of 107 cm−2, was achieved. A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the character of the defect structure of HVPE-grown films was determined by the configuration of the column pattern in the substrate. By choosing the proper pattern, the reduction in the density of threading dislocations in the films by two orders of magnitude (in respect to the substrate material), down to the value of 107 cm−2, was achieved. A3. Hydride vapor phase epitaxy Elsevier B2. Semiconducting III–V materials Elsevier A3. Metalorganic chemical vapor deposition Elsevier A1. Defects Elsevier Kremleva, A.V. oth Kirilenko, D.A. oth Sitnikova, A.A. oth Pechnikov, A.I. oth Mynbaev, K.D. oth Nikolaev, V.I. oth Bougrov, V.E. oth Lipsanen, H. oth Romanov, A.E. oth Enthalten in Elsevier The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting 2011 Amsterdam [u.a.] (DE-627)ELV010662650 volume:445 year:2016 day:1 month:07 pages:30-36 extent:7 https://doi.org/10.1016/j.jcrysgro.2016.04.011 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_22 GBV_ILN_40 GBV_ILN_105 AR 445 2016 1 0701 30-36 7 045F 540 |
allfieldsGer |
10.1016/j.jcrysgro.2016.04.011 doi GBVA2016022000008.pica (DE-627)ELV024873411 (ELSEVIER)S0022-0248(16)30152-X DE-627 ger DE-627 rakwb eng 540 540 DE-600 610 VZ 570 540 VZ Mynbaeva, M.G. verfasserin aut TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern 2016transfer abstract 7 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the character of the defect structure of HVPE-grown films was determined by the configuration of the column pattern in the substrate. By choosing the proper pattern, the reduction in the density of threading dislocations in the films by two orders of magnitude (in respect to the substrate material), down to the value of 107 cm−2, was achieved. A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the character of the defect structure of HVPE-grown films was determined by the configuration of the column pattern in the substrate. By choosing the proper pattern, the reduction in the density of threading dislocations in the films by two orders of magnitude (in respect to the substrate material), down to the value of 107 cm−2, was achieved. A3. Hydride vapor phase epitaxy Elsevier B2. Semiconducting III–V materials Elsevier A3. Metalorganic chemical vapor deposition Elsevier A1. Defects Elsevier Kremleva, A.V. oth Kirilenko, D.A. oth Sitnikova, A.A. oth Pechnikov, A.I. oth Mynbaev, K.D. oth Nikolaev, V.I. oth Bougrov, V.E. oth Lipsanen, H. oth Romanov, A.E. oth Enthalten in Elsevier The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting 2011 Amsterdam [u.a.] (DE-627)ELV010662650 volume:445 year:2016 day:1 month:07 pages:30-36 extent:7 https://doi.org/10.1016/j.jcrysgro.2016.04.011 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_22 GBV_ILN_40 GBV_ILN_105 AR 445 2016 1 0701 30-36 7 045F 540 |
allfieldsSound |
10.1016/j.jcrysgro.2016.04.011 doi GBVA2016022000008.pica (DE-627)ELV024873411 (ELSEVIER)S0022-0248(16)30152-X DE-627 ger DE-627 rakwb eng 540 540 DE-600 610 VZ 570 540 VZ Mynbaeva, M.G. verfasserin aut TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern 2016transfer abstract 7 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the character of the defect structure of HVPE-grown films was determined by the configuration of the column pattern in the substrate. By choosing the proper pattern, the reduction in the density of threading dislocations in the films by two orders of magnitude (in respect to the substrate material), down to the value of 107 cm−2, was achieved. A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the character of the defect structure of HVPE-grown films was determined by the configuration of the column pattern in the substrate. By choosing the proper pattern, the reduction in the density of threading dislocations in the films by two orders of magnitude (in respect to the substrate material), down to the value of 107 cm−2, was achieved. A3. Hydride vapor phase epitaxy Elsevier B2. Semiconducting III–V materials Elsevier A3. Metalorganic chemical vapor deposition Elsevier A1. Defects Elsevier Kremleva, A.V. oth Kirilenko, D.A. oth Sitnikova, A.A. oth Pechnikov, A.I. oth Mynbaev, K.D. oth Nikolaev, V.I. oth Bougrov, V.E. oth Lipsanen, H. oth Romanov, A.E. oth Enthalten in Elsevier The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting 2011 Amsterdam [u.a.] (DE-627)ELV010662650 volume:445 year:2016 day:1 month:07 pages:30-36 extent:7 https://doi.org/10.1016/j.jcrysgro.2016.04.011 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_22 GBV_ILN_40 GBV_ILN_105 AR 445 2016 1 0701 30-36 7 045F 540 |
language |
English |
source |
Enthalten in The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting Amsterdam [u.a.] volume:445 year:2016 day:1 month:07 pages:30-36 extent:7 |
sourceStr |
Enthalten in The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting Amsterdam [u.a.] volume:445 year:2016 day:1 month:07 pages:30-36 extent:7 |
format_phy_str_mv |
Article |
institution |
findex.gbv.de |
topic_facet |
A3. Hydride vapor phase epitaxy B2. Semiconducting III–V materials A3. Metalorganic chemical vapor deposition A1. Defects |
dewey-raw |
540 |
isfreeaccess_bool |
false |
container_title |
The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting |
authorswithroles_txt_mv |
Mynbaeva, M.G. @@aut@@ Kremleva, A.V. @@oth@@ Kirilenko, D.A. @@oth@@ Sitnikova, A.A. @@oth@@ Pechnikov, A.I. @@oth@@ Mynbaev, K.D. @@oth@@ Nikolaev, V.I. @@oth@@ Bougrov, V.E. @@oth@@ Lipsanen, H. @@oth@@ Romanov, A.E. @@oth@@ |
publishDateDaySort_date |
2016-01-01T00:00:00Z |
hierarchy_top_id |
ELV010662650 |
dewey-sort |
3540 |
id |
ELV024873411 |
language_de |
englisch |
fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV024873411</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230625143709.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">180603s2016 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.jcrysgro.2016.04.011</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">GBVA2016022000008.pica</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV024873411</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S0022-0248(16)30152-X</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">540</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">540</subfield><subfield code="q">DE-600</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">610</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">570</subfield><subfield code="a">540</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Mynbaeva, M.G.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2016transfer abstract</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">7</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the character of the defect structure of HVPE-grown films was determined by the configuration of the column pattern in the substrate. By choosing the proper pattern, the reduction in the density of threading dislocations in the films by two orders of magnitude (in respect to the substrate material), down to the value of 107 cm−2, was achieved.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the character of the defect structure of HVPE-grown films was determined by the configuration of the column pattern in the substrate. By choosing the proper pattern, the reduction in the density of threading dislocations in the films by two orders of magnitude (in respect to the substrate material), down to the value of 107 cm−2, was achieved.</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">A3. Hydride vapor phase epitaxy</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">B2. Semiconducting III–V materials</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">A3. Metalorganic chemical vapor deposition</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">A1. Defects</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kremleva, A.V.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kirilenko, D.A.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Sitnikova, A.A.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Pechnikov, A.I.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Mynbaev, K.D.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Nikolaev, V.I.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Bougrov, V.E.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Lipsanen, H.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Romanov, A.E.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="n">Elsevier</subfield><subfield code="t">The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting</subfield><subfield code="d">2011</subfield><subfield code="g">Amsterdam [u.a.]</subfield><subfield code="w">(DE-627)ELV010662650</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:445</subfield><subfield code="g">year:2016</subfield><subfield code="g">day:1</subfield><subfield code="g">month:07</subfield><subfield code="g">pages:30-36</subfield><subfield code="g">extent:7</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1016/j.jcrysgro.2016.04.011</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHA</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">445</subfield><subfield code="j">2016</subfield><subfield code="b">1</subfield><subfield code="c">0701</subfield><subfield code="h">30-36</subfield><subfield code="g">7</subfield></datafield><datafield tag="953" ind1=" " ind2=" "><subfield code="2">045F</subfield><subfield code="a">540</subfield></datafield></record></collection>
|
author |
Mynbaeva, M.G. |
spellingShingle |
Mynbaeva, M.G. ddc 540 ddc 610 ddc 570 Elsevier A3. Hydride vapor phase epitaxy Elsevier B2. Semiconducting III–V materials Elsevier A3. Metalorganic chemical vapor deposition Elsevier A1. Defects TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern |
authorStr |
Mynbaeva, M.G. |
ppnlink_with_tag_str_mv |
@@773@@(DE-627)ELV010662650 |
format |
electronic Article |
dewey-ones |
540 - Chemistry & allied sciences 610 - Medicine & health 570 - Life sciences; biology |
delete_txt_mv |
keep |
author_role |
aut |
collection |
elsevier |
remote_str |
true |
illustrated |
Not Illustrated |
topic_title |
540 540 DE-600 610 VZ 570 540 VZ TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern A3. Hydride vapor phase epitaxy Elsevier B2. Semiconducting III–V materials Elsevier A3. Metalorganic chemical vapor deposition Elsevier A1. Defects Elsevier |
topic |
ddc 540 ddc 610 ddc 570 Elsevier A3. Hydride vapor phase epitaxy Elsevier B2. Semiconducting III–V materials Elsevier A3. Metalorganic chemical vapor deposition Elsevier A1. Defects |
topic_unstemmed |
ddc 540 ddc 610 ddc 570 Elsevier A3. Hydride vapor phase epitaxy Elsevier B2. Semiconducting III–V materials Elsevier A3. Metalorganic chemical vapor deposition Elsevier A1. Defects |
topic_browse |
ddc 540 ddc 610 ddc 570 Elsevier A3. Hydride vapor phase epitaxy Elsevier B2. Semiconducting III–V materials Elsevier A3. Metalorganic chemical vapor deposition Elsevier A1. Defects |
format_facet |
Elektronische Aufsätze Aufsätze Elektronische Ressource |
format_main_str_mv |
Text Zeitschrift/Artikel |
carriertype_str_mv |
zu |
author2_variant |
a k ak d k dk a s as a p ap k m km v n vn v b vb h l hl a r ar |
hierarchy_parent_title |
The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting |
hierarchy_parent_id |
ELV010662650 |
dewey-tens |
540 - Chemistry 610 - Medicine & health 570 - Life sciences; biology |
hierarchy_top_title |
The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting |
isfreeaccess_txt |
false |
familylinks_str_mv |
(DE-627)ELV010662650 |
title |
TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern |
ctrlnum |
(DE-627)ELV024873411 (ELSEVIER)S0022-0248(16)30152-X |
title_full |
TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern |
author_sort |
Mynbaeva, M.G. |
journal |
The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting |
journalStr |
The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting |
lang_code |
eng |
isOA_bool |
false |
dewey-hundreds |
500 - Science 600 - Technology |
recordtype |
marc |
publishDateSort |
2016 |
contenttype_str_mv |
zzz |
container_start_page |
30 |
author_browse |
Mynbaeva, M.G. |
container_volume |
445 |
physical |
7 |
class |
540 540 DE-600 610 VZ 570 540 VZ |
format_se |
Elektronische Aufsätze |
author-letter |
Mynbaeva, M.G. |
doi_str_mv |
10.1016/j.jcrysgro.2016.04.011 |
dewey-full |
540 610 570 |
title_sort |
tem study of defect structure of gan epitaxial films grown on gan/al2o3 substrates with buried column pattern |
title_auth |
TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern |
abstract |
A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the character of the defect structure of HVPE-grown films was determined by the configuration of the column pattern in the substrate. By choosing the proper pattern, the reduction in the density of threading dislocations in the films by two orders of magnitude (in respect to the substrate material), down to the value of 107 cm−2, was achieved. |
abstractGer |
A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the character of the defect structure of HVPE-grown films was determined by the configuration of the column pattern in the substrate. By choosing the proper pattern, the reduction in the density of threading dislocations in the films by two orders of magnitude (in respect to the substrate material), down to the value of 107 cm−2, was achieved. |
abstract_unstemmed |
A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the character of the defect structure of HVPE-grown films was determined by the configuration of the column pattern in the substrate. By choosing the proper pattern, the reduction in the density of threading dislocations in the films by two orders of magnitude (in respect to the substrate material), down to the value of 107 cm−2, was achieved. |
collection_details |
GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_22 GBV_ILN_40 GBV_ILN_105 |
title_short |
TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern |
url |
https://doi.org/10.1016/j.jcrysgro.2016.04.011 |
remote_bool |
true |
author2 |
Kremleva, A.V. Kirilenko, D.A. Sitnikova, A.A. Pechnikov, A.I. Mynbaev, K.D. Nikolaev, V.I. Bougrov, V.E. Lipsanen, H. Romanov, A.E. |
author2Str |
Kremleva, A.V. Kirilenko, D.A. Sitnikova, A.A. Pechnikov, A.I. Mynbaev, K.D. Nikolaev, V.I. Bougrov, V.E. Lipsanen, H. Romanov, A.E. |
ppnlink |
ELV010662650 |
mediatype_str_mv |
z |
isOA_txt |
false |
hochschulschrift_bool |
false |
author2_role |
oth oth oth oth oth oth oth oth oth |
doi_str |
10.1016/j.jcrysgro.2016.04.011 |
up_date |
2024-07-06T22:35:45.196Z |
_version_ |
1803870897645289472 |
fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV024873411</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230625143709.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">180603s2016 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.jcrysgro.2016.04.011</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">GBVA2016022000008.pica</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV024873411</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S0022-0248(16)30152-X</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">540</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">540</subfield><subfield code="q">DE-600</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">610</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">570</subfield><subfield code="a">540</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Mynbaeva, M.G.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2016transfer abstract</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">7</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the character of the defect structure of HVPE-grown films was determined by the configuration of the column pattern in the substrate. By choosing the proper pattern, the reduction in the density of threading dislocations in the films by two orders of magnitude (in respect to the substrate material), down to the value of 107 cm−2, was achieved.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the character of the defect structure of HVPE-grown films was determined by the configuration of the column pattern in the substrate. By choosing the proper pattern, the reduction in the density of threading dislocations in the films by two orders of magnitude (in respect to the substrate material), down to the value of 107 cm−2, was achieved.</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">A3. Hydride vapor phase epitaxy</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">B2. Semiconducting III–V materials</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">A3. Metalorganic chemical vapor deposition</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">A1. Defects</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kremleva, A.V.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kirilenko, D.A.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Sitnikova, A.A.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Pechnikov, A.I.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Mynbaev, K.D.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Nikolaev, V.I.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Bougrov, V.E.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Lipsanen, H.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Romanov, A.E.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="n">Elsevier</subfield><subfield code="t">The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting</subfield><subfield code="d">2011</subfield><subfield code="g">Amsterdam [u.a.]</subfield><subfield code="w">(DE-627)ELV010662650</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:445</subfield><subfield code="g">year:2016</subfield><subfield code="g">day:1</subfield><subfield code="g">month:07</subfield><subfield code="g">pages:30-36</subfield><subfield code="g">extent:7</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1016/j.jcrysgro.2016.04.011</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHA</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">445</subfield><subfield code="j">2016</subfield><subfield code="b">1</subfield><subfield code="c">0701</subfield><subfield code="h">30-36</subfield><subfield code="g">7</subfield></datafield><datafield tag="953" ind1=" " ind2=" "><subfield code="2">045F</subfield><subfield code="a">540</subfield></datafield></record></collection>
|
score |
7.400839 |