TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern
A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the char...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Mynbaeva, M.G. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2016transfer abstract |
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| Schlagwörter: |
A3. Hydride vapor phase epitaxy B2. Semiconducting III–V materials |
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| Umfang: |
7 |
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| Übergeordnetes Werk: |
Enthalten in: The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting - 2011, Amsterdam [u.a.] |
|---|---|
| Übergeordnetes Werk: |
volume:445 ; year:2016 ; day:1 ; month:07 ; pages:30-36 ; extent:7 |
| Links: |
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| DOI / URN: |
10.1016/j.jcrysgro.2016.04.011 |
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ELV024873411 |
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| 245 | 1 | 0 | |a TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern |
| 264 | 1 | |c 2016transfer abstract | |
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| 520 | |a A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the character of the defect structure of HVPE-grown films was determined by the configuration of the column pattern in the substrate. By choosing the proper pattern, the reduction in the density of threading dislocations in the films by two orders of magnitude (in respect to the substrate material), down to the value of 107 cm−2, was achieved. | ||
| 520 | |a A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the character of the defect structure of HVPE-grown films was determined by the configuration of the column pattern in the substrate. By choosing the proper pattern, the reduction in the density of threading dislocations in the films by two orders of magnitude (in respect to the substrate material), down to the value of 107 cm−2, was achieved. | ||
| 650 | 7 | |a A3. Hydride vapor phase epitaxy |2 Elsevier | |
| 650 | 7 | |a B2. Semiconducting III–V materials |2 Elsevier | |
| 650 | 7 | |a A3. Metalorganic chemical vapor deposition |2 Elsevier | |
| 650 | 7 | |a A1. Defects |2 Elsevier | |
| 700 | 1 | |a Kremleva, A.V. |4 oth | |
| 700 | 1 | |a Kirilenko, D.A. |4 oth | |
| 700 | 1 | |a Sitnikova, A.A. |4 oth | |
| 700 | 1 | |a Pechnikov, A.I. |4 oth | |
| 700 | 1 | |a Mynbaev, K.D. |4 oth | |
| 700 | 1 | |a Nikolaev, V.I. |4 oth | |
| 700 | 1 | |a Bougrov, V.E. |4 oth | |
| 700 | 1 | |a Lipsanen, H. |4 oth | |
| 700 | 1 | |a Romanov, A.E. |4 oth | |
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10.1016/j.jcrysgro.2016.04.011 doi GBVA2016022000008.pica (DE-627)ELV024873411 (ELSEVIER)S0022-0248(16)30152-X DE-627 ger DE-627 rakwb eng 540 540 DE-600 610 VZ 570 540 VZ Mynbaeva, M.G. verfasserin aut TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern 2016transfer abstract 7 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the character of the defect structure of HVPE-grown films was determined by the configuration of the column pattern in the substrate. By choosing the proper pattern, the reduction in the density of threading dislocations in the films by two orders of magnitude (in respect to the substrate material), down to the value of 107 cm−2, was achieved. A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the character of the defect structure of HVPE-grown films was determined by the configuration of the column pattern in the substrate. By choosing the proper pattern, the reduction in the density of threading dislocations in the films by two orders of magnitude (in respect to the substrate material), down to the value of 107 cm−2, was achieved. A3. Hydride vapor phase epitaxy Elsevier B2. Semiconducting III–V materials Elsevier A3. Metalorganic chemical vapor deposition Elsevier A1. Defects Elsevier Kremleva, A.V. oth Kirilenko, D.A. oth Sitnikova, A.A. oth Pechnikov, A.I. oth Mynbaev, K.D. oth Nikolaev, V.I. oth Bougrov, V.E. oth Lipsanen, H. oth Romanov, A.E. oth Enthalten in Elsevier The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting 2011 Amsterdam [u.a.] (DE-627)ELV010662650 volume:445 year:2016 day:1 month:07 pages:30-36 extent:7 https://doi.org/10.1016/j.jcrysgro.2016.04.011 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_22 GBV_ILN_40 GBV_ILN_105 AR 445 2016 1 0701 30-36 7 045F 540 |
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10.1016/j.jcrysgro.2016.04.011 doi GBVA2016022000008.pica (DE-627)ELV024873411 (ELSEVIER)S0022-0248(16)30152-X DE-627 ger DE-627 rakwb eng 540 540 DE-600 610 VZ 570 540 VZ Mynbaeva, M.G. verfasserin aut TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern 2016transfer abstract 7 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the character of the defect structure of HVPE-grown films was determined by the configuration of the column pattern in the substrate. By choosing the proper pattern, the reduction in the density of threading dislocations in the films by two orders of magnitude (in respect to the substrate material), down to the value of 107 cm−2, was achieved. A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the character of the defect structure of HVPE-grown films was determined by the configuration of the column pattern in the substrate. By choosing the proper pattern, the reduction in the density of threading dislocations in the films by two orders of magnitude (in respect to the substrate material), down to the value of 107 cm−2, was achieved. A3. Hydride vapor phase epitaxy Elsevier B2. Semiconducting III–V materials Elsevier A3. Metalorganic chemical vapor deposition Elsevier A1. Defects Elsevier Kremleva, A.V. oth Kirilenko, D.A. oth Sitnikova, A.A. oth Pechnikov, A.I. oth Mynbaev, K.D. oth Nikolaev, V.I. oth Bougrov, V.E. oth Lipsanen, H. oth Romanov, A.E. oth Enthalten in Elsevier The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting 2011 Amsterdam [u.a.] (DE-627)ELV010662650 volume:445 year:2016 day:1 month:07 pages:30-36 extent:7 https://doi.org/10.1016/j.jcrysgro.2016.04.011 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_22 GBV_ILN_40 GBV_ILN_105 AR 445 2016 1 0701 30-36 7 045F 540 |
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10.1016/j.jcrysgro.2016.04.011 doi GBVA2016022000008.pica (DE-627)ELV024873411 (ELSEVIER)S0022-0248(16)30152-X DE-627 ger DE-627 rakwb eng 540 540 DE-600 610 VZ 570 540 VZ Mynbaeva, M.G. verfasserin aut TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern 2016transfer abstract 7 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the character of the defect structure of HVPE-grown films was determined by the configuration of the column pattern in the substrate. By choosing the proper pattern, the reduction in the density of threading dislocations in the films by two orders of magnitude (in respect to the substrate material), down to the value of 107 cm−2, was achieved. A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the character of the defect structure of HVPE-grown films was determined by the configuration of the column pattern in the substrate. By choosing the proper pattern, the reduction in the density of threading dislocations in the films by two orders of magnitude (in respect to the substrate material), down to the value of 107 cm−2, was achieved. A3. Hydride vapor phase epitaxy Elsevier B2. Semiconducting III–V materials Elsevier A3. Metalorganic chemical vapor deposition Elsevier A1. Defects Elsevier Kremleva, A.V. oth Kirilenko, D.A. oth Sitnikova, A.A. oth Pechnikov, A.I. oth Mynbaev, K.D. oth Nikolaev, V.I. oth Bougrov, V.E. oth Lipsanen, H. oth Romanov, A.E. oth Enthalten in Elsevier The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting 2011 Amsterdam [u.a.] (DE-627)ELV010662650 volume:445 year:2016 day:1 month:07 pages:30-36 extent:7 https://doi.org/10.1016/j.jcrysgro.2016.04.011 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_22 GBV_ILN_40 GBV_ILN_105 AR 445 2016 1 0701 30-36 7 045F 540 |
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10.1016/j.jcrysgro.2016.04.011 doi GBVA2016022000008.pica (DE-627)ELV024873411 (ELSEVIER)S0022-0248(16)30152-X DE-627 ger DE-627 rakwb eng 540 540 DE-600 610 VZ 570 540 VZ Mynbaeva, M.G. verfasserin aut TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern 2016transfer abstract 7 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the character of the defect structure of HVPE-grown films was determined by the configuration of the column pattern in the substrate. By choosing the proper pattern, the reduction in the density of threading dislocations in the films by two orders of magnitude (in respect to the substrate material), down to the value of 107 cm−2, was achieved. A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the character of the defect structure of HVPE-grown films was determined by the configuration of the column pattern in the substrate. By choosing the proper pattern, the reduction in the density of threading dislocations in the films by two orders of magnitude (in respect to the substrate material), down to the value of 107 cm−2, was achieved. A3. Hydride vapor phase epitaxy Elsevier B2. Semiconducting III–V materials Elsevier A3. Metalorganic chemical vapor deposition Elsevier A1. Defects Elsevier Kremleva, A.V. oth Kirilenko, D.A. oth Sitnikova, A.A. oth Pechnikov, A.I. oth Mynbaev, K.D. oth Nikolaev, V.I. oth Bougrov, V.E. oth Lipsanen, H. oth Romanov, A.E. oth Enthalten in Elsevier The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting 2011 Amsterdam [u.a.] (DE-627)ELV010662650 volume:445 year:2016 day:1 month:07 pages:30-36 extent:7 https://doi.org/10.1016/j.jcrysgro.2016.04.011 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_22 GBV_ILN_40 GBV_ILN_105 AR 445 2016 1 0701 30-36 7 045F 540 |
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10.1016/j.jcrysgro.2016.04.011 doi GBVA2016022000008.pica (DE-627)ELV024873411 (ELSEVIER)S0022-0248(16)30152-X DE-627 ger DE-627 rakwb eng 540 540 DE-600 610 VZ 570 540 VZ Mynbaeva, M.G. verfasserin aut TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern 2016transfer abstract 7 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the character of the defect structure of HVPE-grown films was determined by the configuration of the column pattern in the substrate. By choosing the proper pattern, the reduction in the density of threading dislocations in the films by two orders of magnitude (in respect to the substrate material), down to the value of 107 cm−2, was achieved. A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the character of the defect structure of HVPE-grown films was determined by the configuration of the column pattern in the substrate. By choosing the proper pattern, the reduction in the density of threading dislocations in the films by two orders of magnitude (in respect to the substrate material), down to the value of 107 cm−2, was achieved. A3. Hydride vapor phase epitaxy Elsevier B2. Semiconducting III–V materials Elsevier A3. Metalorganic chemical vapor deposition Elsevier A1. Defects Elsevier Kremleva, A.V. oth Kirilenko, D.A. oth Sitnikova, A.A. oth Pechnikov, A.I. oth Mynbaev, K.D. oth Nikolaev, V.I. oth Bougrov, V.E. oth Lipsanen, H. oth Romanov, A.E. oth Enthalten in Elsevier The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting 2011 Amsterdam [u.a.] (DE-627)ELV010662650 volume:445 year:2016 day:1 month:07 pages:30-36 extent:7 https://doi.org/10.1016/j.jcrysgro.2016.04.011 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_22 GBV_ILN_40 GBV_ILN_105 AR 445 2016 1 0701 30-36 7 045F 540 |
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Enthalten in The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting Amsterdam [u.a.] volume:445 year:2016 day:1 month:07 pages:30-36 extent:7 |
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Mynbaeva, M.G. @@aut@@ Kremleva, A.V. @@oth@@ Kirilenko, D.A. @@oth@@ Sitnikova, A.A. @@oth@@ Pechnikov, A.I. @@oth@@ Mynbaev, K.D. @@oth@@ Nikolaev, V.I. @@oth@@ Bougrov, V.E. @@oth@@ Lipsanen, H. @@oth@@ Romanov, A.E. @@oth@@ |
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TEM study of defect structure of GaN epitaxial films grown on GaN/Al2O3 substrates with buried column pattern |
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A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the character of the defect structure of HVPE-grown films was determined by the configuration of the column pattern in the substrate. By choosing the proper pattern, the reduction in the density of threading dislocations in the films by two orders of magnitude (in respect to the substrate material), down to the value of 107 cm−2, was achieved. |
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A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the character of the defect structure of HVPE-grown films was determined by the configuration of the column pattern in the substrate. By choosing the proper pattern, the reduction in the density of threading dislocations in the films by two orders of magnitude (in respect to the substrate material), down to the value of 107 cm−2, was achieved. |
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A TEM study of defect structure of GaN films grown by chloride vapor-phase epitaxy (HVPE) on GaN/Al2O3 substrates was performed. The substrates were fabricated by metal-organic chemical vapor deposition overgrowth of templates with buried column pattern. The results of TEM study showed that the character of the defect structure of HVPE-grown films was determined by the configuration of the column pattern in the substrate. By choosing the proper pattern, the reduction in the density of threading dislocations in the films by two orders of magnitude (in respect to the substrate material), down to the value of 107 cm−2, was achieved. |
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