First prototypes of two-tier avalanche pixel sensors for particle detection
In this paper, we present the implementation and preliminary evaluation of a new type of silicon sensor for charged particle detection operated in Geiger-mode. The proposed device, formed by two vertically-aligned pixel arrays, exploits the coincidence between two simultaneous avalanche events to di...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Pancheri, L. [verfasserIn] |
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E-Artikel |
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| Sprache: |
Englisch |
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2017transfer abstract |
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4 |
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| Übergeordnetes Werk: |
Enthalten in: The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol - Ide, C.V. ELSEVIER, 2017, a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics, Amsterdam |
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| Übergeordnetes Werk: |
volume:845 ; year:2017 ; day:11 ; month:02 ; pages:143-146 ; extent:4 |
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| DOI / URN: |
10.1016/j.nima.2016.06.094 |
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| 520 | |a In this paper, we present the implementation and preliminary evaluation of a new type of silicon sensor for charged particle detection operated in Geiger-mode. The proposed device, formed by two vertically-aligned pixel arrays, exploits the coincidence between two simultaneous avalanche events to discriminate between particle-triggered detections and dark counts. A proof-of-concept two-layer sensor with per-pixel coincidence circuits was designed and fabricated in a 150nm CMOS process and vertically integrated through bump bonding. The sensor includes a 48×16pixel array with 50 μ m × 75 μ m pixels. This work describes the sensor architecture and reports a selection of results from the characterization of the avalanche detectors in the two layers. Detectors with an active area of 43 × 45 μ m 2 have a median dark count rate of 3kHz at 3.3V excess bias and a breakdown voltage non-uniformity lower than 20mV. | ||
| 520 | |a In this paper, we present the implementation and preliminary evaluation of a new type of silicon sensor for charged particle detection operated in Geiger-mode. The proposed device, formed by two vertically-aligned pixel arrays, exploits the coincidence between two simultaneous avalanche events to discriminate between particle-triggered detections and dark counts. A proof-of-concept two-layer sensor with per-pixel coincidence circuits was designed and fabricated in a 150nm CMOS process and vertically integrated through bump bonding. The sensor includes a 48×16pixel array with 50 μ m × 75 μ m pixels. This work describes the sensor architecture and reports a selection of results from the characterization of the avalanche detectors in the two layers. Detectors with an active area of 43 × 45 μ m 2 have a median dark count rate of 3kHz at 3.3V excess bias and a breakdown voltage non-uniformity lower than 20mV. | ||
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| 700 | 1 | |a Brogi, P. |4 oth | |
| 700 | 1 | |a Collazuol, G. |4 oth | |
| 700 | 1 | |a Dalla Betta, G.-F. |4 oth | |
| 700 | 1 | |a Ficorella, A. |4 oth | |
| 700 | 1 | |a Marrocchesi, P.S. |4 oth | |
| 700 | 1 | |a Morsani, F. |4 oth | |
| 700 | 1 | |a Ratti, L. |4 oth | |
| 700 | 1 | |a Savoy-Navarro, A. |4 oth | |
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10.1016/j.nima.2016.06.094 doi GBV00000000000106A.pica (DE-627)ELV025144731 (ELSEVIER)S0168-9002(16)30658-1 DE-627 ger DE-627 rakwb eng 530 530 DE-600 610 VZ 44.90 bkl Pancheri, L. verfasserin aut First prototypes of two-tier avalanche pixel sensors for particle detection 2017transfer abstract 4 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier In this paper, we present the implementation and preliminary evaluation of a new type of silicon sensor for charged particle detection operated in Geiger-mode. The proposed device, formed by two vertically-aligned pixel arrays, exploits the coincidence between two simultaneous avalanche events to discriminate between particle-triggered detections and dark counts. A proof-of-concept two-layer sensor with per-pixel coincidence circuits was designed and fabricated in a 150nm CMOS process and vertically integrated through bump bonding. The sensor includes a 48×16pixel array with 50 μ m × 75 μ m pixels. This work describes the sensor architecture and reports a selection of results from the characterization of the avalanche detectors in the two layers. Detectors with an active area of 43 × 45 μ m 2 have a median dark count rate of 3kHz at 3.3V excess bias and a breakdown voltage non-uniformity lower than 20mV. In this paper, we present the implementation and preliminary evaluation of a new type of silicon sensor for charged particle detection operated in Geiger-mode. The proposed device, formed by two vertically-aligned pixel arrays, exploits the coincidence between two simultaneous avalanche events to discriminate between particle-triggered detections and dark counts. A proof-of-concept two-layer sensor with per-pixel coincidence circuits was designed and fabricated in a 150nm CMOS process and vertically integrated through bump bonding. The sensor includes a 48×16pixel array with 50 μ m × 75 μ m pixels. This work describes the sensor architecture and reports a selection of results from the characterization of the avalanche detectors in the two layers. Detectors with an active area of 43 × 45 μ m 2 have a median dark count rate of 3kHz at 3.3V excess bias and a breakdown voltage non-uniformity lower than 20mV. CMOS Elsevier Geiger-mode avalanche diode Elsevier Pixelated sensor Elsevier Particle detector Elsevier Brogi, P. oth Collazuol, G. oth Dalla Betta, G.-F. oth Ficorella, A. oth Marrocchesi, P.S. oth Morsani, F. oth Ratti, L. oth Savoy-Navarro, A. oth Enthalten in North-Holland Publ. Co Ide, C.V. ELSEVIER The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol 2017 a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics Amsterdam (DE-627)ELV000874671 volume:845 year:2017 day:11 month:02 pages:143-146 extent:4 https://doi.org/10.1016/j.nima.2016.06.094 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 44.90 Neurologie VZ AR 845 2017 11 0211 143-146 4 045F 530 |
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10.1016/j.nima.2016.06.094 doi GBV00000000000106A.pica (DE-627)ELV025144731 (ELSEVIER)S0168-9002(16)30658-1 DE-627 ger DE-627 rakwb eng 530 530 DE-600 610 VZ 44.90 bkl Pancheri, L. verfasserin aut First prototypes of two-tier avalanche pixel sensors for particle detection 2017transfer abstract 4 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier In this paper, we present the implementation and preliminary evaluation of a new type of silicon sensor for charged particle detection operated in Geiger-mode. The proposed device, formed by two vertically-aligned pixel arrays, exploits the coincidence between two simultaneous avalanche events to discriminate between particle-triggered detections and dark counts. A proof-of-concept two-layer sensor with per-pixel coincidence circuits was designed and fabricated in a 150nm CMOS process and vertically integrated through bump bonding. The sensor includes a 48×16pixel array with 50 μ m × 75 μ m pixels. This work describes the sensor architecture and reports a selection of results from the characterization of the avalanche detectors in the two layers. Detectors with an active area of 43 × 45 μ m 2 have a median dark count rate of 3kHz at 3.3V excess bias and a breakdown voltage non-uniformity lower than 20mV. In this paper, we present the implementation and preliminary evaluation of a new type of silicon sensor for charged particle detection operated in Geiger-mode. The proposed device, formed by two vertically-aligned pixel arrays, exploits the coincidence between two simultaneous avalanche events to discriminate between particle-triggered detections and dark counts. A proof-of-concept two-layer sensor with per-pixel coincidence circuits was designed and fabricated in a 150nm CMOS process and vertically integrated through bump bonding. The sensor includes a 48×16pixel array with 50 μ m × 75 μ m pixels. This work describes the sensor architecture and reports a selection of results from the characterization of the avalanche detectors in the two layers. Detectors with an active area of 43 × 45 μ m 2 have a median dark count rate of 3kHz at 3.3V excess bias and a breakdown voltage non-uniformity lower than 20mV. CMOS Elsevier Geiger-mode avalanche diode Elsevier Pixelated sensor Elsevier Particle detector Elsevier Brogi, P. oth Collazuol, G. oth Dalla Betta, G.-F. oth Ficorella, A. oth Marrocchesi, P.S. oth Morsani, F. oth Ratti, L. oth Savoy-Navarro, A. oth Enthalten in North-Holland Publ. Co Ide, C.V. ELSEVIER The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol 2017 a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics Amsterdam (DE-627)ELV000874671 volume:845 year:2017 day:11 month:02 pages:143-146 extent:4 https://doi.org/10.1016/j.nima.2016.06.094 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 44.90 Neurologie VZ AR 845 2017 11 0211 143-146 4 045F 530 |
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10.1016/j.nima.2016.06.094 doi GBV00000000000106A.pica (DE-627)ELV025144731 (ELSEVIER)S0168-9002(16)30658-1 DE-627 ger DE-627 rakwb eng 530 530 DE-600 610 VZ 44.90 bkl Pancheri, L. verfasserin aut First prototypes of two-tier avalanche pixel sensors for particle detection 2017transfer abstract 4 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier In this paper, we present the implementation and preliminary evaluation of a new type of silicon sensor for charged particle detection operated in Geiger-mode. The proposed device, formed by two vertically-aligned pixel arrays, exploits the coincidence between two simultaneous avalanche events to discriminate between particle-triggered detections and dark counts. A proof-of-concept two-layer sensor with per-pixel coincidence circuits was designed and fabricated in a 150nm CMOS process and vertically integrated through bump bonding. The sensor includes a 48×16pixel array with 50 μ m × 75 μ m pixels. This work describes the sensor architecture and reports a selection of results from the characterization of the avalanche detectors in the two layers. Detectors with an active area of 43 × 45 μ m 2 have a median dark count rate of 3kHz at 3.3V excess bias and a breakdown voltage non-uniformity lower than 20mV. In this paper, we present the implementation and preliminary evaluation of a new type of silicon sensor for charged particle detection operated in Geiger-mode. The proposed device, formed by two vertically-aligned pixel arrays, exploits the coincidence between two simultaneous avalanche events to discriminate between particle-triggered detections and dark counts. A proof-of-concept two-layer sensor with per-pixel coincidence circuits was designed and fabricated in a 150nm CMOS process and vertically integrated through bump bonding. The sensor includes a 48×16pixel array with 50 μ m × 75 μ m pixels. This work describes the sensor architecture and reports a selection of results from the characterization of the avalanche detectors in the two layers. Detectors with an active area of 43 × 45 μ m 2 have a median dark count rate of 3kHz at 3.3V excess bias and a breakdown voltage non-uniformity lower than 20mV. CMOS Elsevier Geiger-mode avalanche diode Elsevier Pixelated sensor Elsevier Particle detector Elsevier Brogi, P. oth Collazuol, G. oth Dalla Betta, G.-F. oth Ficorella, A. oth Marrocchesi, P.S. oth Morsani, F. oth Ratti, L. oth Savoy-Navarro, A. oth Enthalten in North-Holland Publ. Co Ide, C.V. ELSEVIER The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol 2017 a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics Amsterdam (DE-627)ELV000874671 volume:845 year:2017 day:11 month:02 pages:143-146 extent:4 https://doi.org/10.1016/j.nima.2016.06.094 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 44.90 Neurologie VZ AR 845 2017 11 0211 143-146 4 045F 530 |
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10.1016/j.nima.2016.06.094 doi GBV00000000000106A.pica (DE-627)ELV025144731 (ELSEVIER)S0168-9002(16)30658-1 DE-627 ger DE-627 rakwb eng 530 530 DE-600 610 VZ 44.90 bkl Pancheri, L. verfasserin aut First prototypes of two-tier avalanche pixel sensors for particle detection 2017transfer abstract 4 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier In this paper, we present the implementation and preliminary evaluation of a new type of silicon sensor for charged particle detection operated in Geiger-mode. The proposed device, formed by two vertically-aligned pixel arrays, exploits the coincidence between two simultaneous avalanche events to discriminate between particle-triggered detections and dark counts. A proof-of-concept two-layer sensor with per-pixel coincidence circuits was designed and fabricated in a 150nm CMOS process and vertically integrated through bump bonding. The sensor includes a 48×16pixel array with 50 μ m × 75 μ m pixels. This work describes the sensor architecture and reports a selection of results from the characterization of the avalanche detectors in the two layers. Detectors with an active area of 43 × 45 μ m 2 have a median dark count rate of 3kHz at 3.3V excess bias and a breakdown voltage non-uniformity lower than 20mV. In this paper, we present the implementation and preliminary evaluation of a new type of silicon sensor for charged particle detection operated in Geiger-mode. The proposed device, formed by two vertically-aligned pixel arrays, exploits the coincidence between two simultaneous avalanche events to discriminate between particle-triggered detections and dark counts. A proof-of-concept two-layer sensor with per-pixel coincidence circuits was designed and fabricated in a 150nm CMOS process and vertically integrated through bump bonding. The sensor includes a 48×16pixel array with 50 μ m × 75 μ m pixels. This work describes the sensor architecture and reports a selection of results from the characterization of the avalanche detectors in the two layers. Detectors with an active area of 43 × 45 μ m 2 have a median dark count rate of 3kHz at 3.3V excess bias and a breakdown voltage non-uniformity lower than 20mV. CMOS Elsevier Geiger-mode avalanche diode Elsevier Pixelated sensor Elsevier Particle detector Elsevier Brogi, P. oth Collazuol, G. oth Dalla Betta, G.-F. oth Ficorella, A. oth Marrocchesi, P.S. oth Morsani, F. oth Ratti, L. oth Savoy-Navarro, A. oth Enthalten in North-Holland Publ. Co Ide, C.V. ELSEVIER The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol 2017 a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics Amsterdam (DE-627)ELV000874671 volume:845 year:2017 day:11 month:02 pages:143-146 extent:4 https://doi.org/10.1016/j.nima.2016.06.094 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 44.90 Neurologie VZ AR 845 2017 11 0211 143-146 4 045F 530 |
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10.1016/j.nima.2016.06.094 doi GBV00000000000106A.pica (DE-627)ELV025144731 (ELSEVIER)S0168-9002(16)30658-1 DE-627 ger DE-627 rakwb eng 530 530 DE-600 610 VZ 44.90 bkl Pancheri, L. verfasserin aut First prototypes of two-tier avalanche pixel sensors for particle detection 2017transfer abstract 4 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier In this paper, we present the implementation and preliminary evaluation of a new type of silicon sensor for charged particle detection operated in Geiger-mode. The proposed device, formed by two vertically-aligned pixel arrays, exploits the coincidence between two simultaneous avalanche events to discriminate between particle-triggered detections and dark counts. A proof-of-concept two-layer sensor with per-pixel coincidence circuits was designed and fabricated in a 150nm CMOS process and vertically integrated through bump bonding. The sensor includes a 48×16pixel array with 50 μ m × 75 μ m pixels. This work describes the sensor architecture and reports a selection of results from the characterization of the avalanche detectors in the two layers. Detectors with an active area of 43 × 45 μ m 2 have a median dark count rate of 3kHz at 3.3V excess bias and a breakdown voltage non-uniformity lower than 20mV. In this paper, we present the implementation and preliminary evaluation of a new type of silicon sensor for charged particle detection operated in Geiger-mode. The proposed device, formed by two vertically-aligned pixel arrays, exploits the coincidence between two simultaneous avalanche events to discriminate between particle-triggered detections and dark counts. A proof-of-concept two-layer sensor with per-pixel coincidence circuits was designed and fabricated in a 150nm CMOS process and vertically integrated through bump bonding. The sensor includes a 48×16pixel array with 50 μ m × 75 μ m pixels. This work describes the sensor architecture and reports a selection of results from the characterization of the avalanche detectors in the two layers. Detectors with an active area of 43 × 45 μ m 2 have a median dark count rate of 3kHz at 3.3V excess bias and a breakdown voltage non-uniformity lower than 20mV. CMOS Elsevier Geiger-mode avalanche diode Elsevier Pixelated sensor Elsevier Particle detector Elsevier Brogi, P. oth Collazuol, G. oth Dalla Betta, G.-F. oth Ficorella, A. oth Marrocchesi, P.S. oth Morsani, F. oth Ratti, L. oth Savoy-Navarro, A. oth Enthalten in North-Holland Publ. Co Ide, C.V. ELSEVIER The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol 2017 a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics Amsterdam (DE-627)ELV000874671 volume:845 year:2017 day:11 month:02 pages:143-146 extent:4 https://doi.org/10.1016/j.nima.2016.06.094 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 44.90 Neurologie VZ AR 845 2017 11 0211 143-146 4 045F 530 |
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In this paper, we present the implementation and preliminary evaluation of a new type of silicon sensor for charged particle detection operated in Geiger-mode. The proposed device, formed by two vertically-aligned pixel arrays, exploits the coincidence between two simultaneous avalanche events to discriminate between particle-triggered detections and dark counts. A proof-of-concept two-layer sensor with per-pixel coincidence circuits was designed and fabricated in a 150nm CMOS process and vertically integrated through bump bonding. The sensor includes a 48×16pixel array with 50 μ m × 75 μ m pixels. This work describes the sensor architecture and reports a selection of results from the characterization of the avalanche detectors in the two layers. Detectors with an active area of 43 × 45 μ m 2 have a median dark count rate of 3kHz at 3.3V excess bias and a breakdown voltage non-uniformity lower than 20mV. |
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In this paper, we present the implementation and preliminary evaluation of a new type of silicon sensor for charged particle detection operated in Geiger-mode. The proposed device, formed by two vertically-aligned pixel arrays, exploits the coincidence between two simultaneous avalanche events to discriminate between particle-triggered detections and dark counts. A proof-of-concept two-layer sensor with per-pixel coincidence circuits was designed and fabricated in a 150nm CMOS process and vertically integrated through bump bonding. The sensor includes a 48×16pixel array with 50 μ m × 75 μ m pixels. This work describes the sensor architecture and reports a selection of results from the characterization of the avalanche detectors in the two layers. Detectors with an active area of 43 × 45 μ m 2 have a median dark count rate of 3kHz at 3.3V excess bias and a breakdown voltage non-uniformity lower than 20mV. |
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In this paper, we present the implementation and preliminary evaluation of a new type of silicon sensor for charged particle detection operated in Geiger-mode. The proposed device, formed by two vertically-aligned pixel arrays, exploits the coincidence between two simultaneous avalanche events to discriminate between particle-triggered detections and dark counts. A proof-of-concept two-layer sensor with per-pixel coincidence circuits was designed and fabricated in a 150nm CMOS process and vertically integrated through bump bonding. The sensor includes a 48×16pixel array with 50 μ m × 75 μ m pixels. This work describes the sensor architecture and reports a selection of results from the characterization of the avalanche detectors in the two layers. Detectors with an active area of 43 × 45 μ m 2 have a median dark count rate of 3kHz at 3.3V excess bias and a breakdown voltage non-uniformity lower than 20mV. |
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