Growth and characterization of β-Ga2O3 crystals
Here we report on the growth and characterization of β-Ga2O3 bulk crystals and polycrystalline layer on different substrates. Bulk β-Ga2O3 crystals were produced by free crystallisation of gallium oxide melt in sapphire crucible. Transparent single crystals measuring up to 8mm across were obtained....
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Nikolaev, V.I. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2017transfer abstract |
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| Schlagwörter: |
A3. Physical vapour deposition processes |
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| Umfang: |
5 |
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| Übergeordnetes Werk: |
Enthalten in: The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting - 2011, Amsterdam [u.a.] |
|---|---|
| Übergeordnetes Werk: |
volume:457 ; year:2017 ; day:1 ; month:01 ; pages:132-136 ; extent:5 |
| Links: |
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| DOI / URN: |
10.1016/j.jcrysgro.2016.05.049 |
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| 520 | |a Here we report on the growth and characterization of β-Ga2O3 bulk crystals and polycrystalline layer on different substrates. Bulk β-Ga2O3 crystals were produced by free crystallisation of gallium oxide melt in sapphire crucible. Transparent single crystals measuring up to 8mm across were obtained. Good structural quality was confirmed by x-ray diffraction rocking curve FWHM values of ~46″. Young’s modulus, shear modulus and hardness of the β-Ga2O3 crystals were measured by nanoindentation and Vickers microindentation techniques. Polycrystalline β-Ga2O3 films were deposited on silicon and sapphire substrates by sublimation method. It was found that structure and morphology of the films were greatly influenced by the material and orientation of the substrates. The best results were achieved on a-plane sapphire substrates where predominantly (111) oriented films were obtained. | ||
| 520 | |a Here we report on the growth and characterization of β-Ga2O3 bulk crystals and polycrystalline layer on different substrates. Bulk β-Ga2O3 crystals were produced by free crystallisation of gallium oxide melt in sapphire crucible. Transparent single crystals measuring up to 8mm across were obtained. Good structural quality was confirmed by x-ray diffraction rocking curve FWHM values of ~46″. Young’s modulus, shear modulus and hardness of the β-Ga2O3 crystals were measured by nanoindentation and Vickers microindentation techniques. Polycrystalline β-Ga2O3 films were deposited on silicon and sapphire substrates by sublimation method. It was found that structure and morphology of the films were greatly influenced by the material and orientation of the substrates. The best results were achieved on a-plane sapphire substrates where predominantly (111) oriented films were obtained. | ||
| 650 | 7 | |a B1. Oxides |2 Elsevier | |
| 650 | 7 | |a A3. Physical vapour deposition processes |2 Elsevier | |
| 650 | 7 | |a B2. Semiconducting gallium compounds |2 Elsevier | |
| 650 | 7 | |a B1. Gallium compounds |2 Elsevier | |
| 650 | 7 | |a A2. Growth from vapour |2 Elsevier | |
| 650 | 7 | |a B2. Wide bandgap semiconductors |2 Elsevier | |
| 700 | 1 | |a Maslov, V. |4 oth | |
| 700 | 1 | |a Stepanov, S.I. |4 oth | |
| 700 | 1 | |a Pechnikov, A.I. |4 oth | |
| 700 | 1 | |a Krymov, V. |4 oth | |
| 700 | 1 | |a Nikitina, I.P. |4 oth | |
| 700 | 1 | |a Guzilova, L.I. |4 oth | |
| 700 | 1 | |a Bougrov, V.E. |4 oth | |
| 700 | 1 | |a Romanov, A.E. |4 oth | |
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10.1016/j.jcrysgro.2016.05.049 doi GBVA2017021000021.pica (DE-627)ELV025640577 (ELSEVIER)S0022-0248(16)30286-X DE-627 ger DE-627 rakwb eng 540 540 DE-600 610 VZ 570 540 VZ Nikolaev, V.I. verfasserin aut Growth and characterization of β-Ga2O3 crystals 2017transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Here we report on the growth and characterization of β-Ga2O3 bulk crystals and polycrystalline layer on different substrates. Bulk β-Ga2O3 crystals were produced by free crystallisation of gallium oxide melt in sapphire crucible. Transparent single crystals measuring up to 8mm across were obtained. Good structural quality was confirmed by x-ray diffraction rocking curve FWHM values of ~46″. Young’s modulus, shear modulus and hardness of the β-Ga2O3 crystals were measured by nanoindentation and Vickers microindentation techniques. Polycrystalline β-Ga2O3 films were deposited on silicon and sapphire substrates by sublimation method. It was found that structure and morphology of the films were greatly influenced by the material and orientation of the substrates. The best results were achieved on a-plane sapphire substrates where predominantly (111) oriented films were obtained. Here we report on the growth and characterization of β-Ga2O3 bulk crystals and polycrystalline layer on different substrates. Bulk β-Ga2O3 crystals were produced by free crystallisation of gallium oxide melt in sapphire crucible. Transparent single crystals measuring up to 8mm across were obtained. Good structural quality was confirmed by x-ray diffraction rocking curve FWHM values of ~46″. Young’s modulus, shear modulus and hardness of the β-Ga2O3 crystals were measured by nanoindentation and Vickers microindentation techniques. Polycrystalline β-Ga2O3 films were deposited on silicon and sapphire substrates by sublimation method. It was found that structure and morphology of the films were greatly influenced by the material and orientation of the substrates. The best results were achieved on a-plane sapphire substrates where predominantly (111) oriented films were obtained. B1. Oxides Elsevier A3. Physical vapour deposition processes Elsevier B2. Semiconducting gallium compounds Elsevier B1. Gallium compounds Elsevier A2. Growth from vapour Elsevier B2. Wide bandgap semiconductors Elsevier Maslov, V. oth Stepanov, S.I. oth Pechnikov, A.I. oth Krymov, V. oth Nikitina, I.P. oth Guzilova, L.I. oth Bougrov, V.E. oth Romanov, A.E. oth Enthalten in Elsevier The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting 2011 Amsterdam [u.a.] (DE-627)ELV010662650 volume:457 year:2017 day:1 month:01 pages:132-136 extent:5 https://doi.org/10.1016/j.jcrysgro.2016.05.049 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_22 GBV_ILN_40 GBV_ILN_105 AR 457 2017 1 0101 132-136 5 045F 540 |
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10.1016/j.jcrysgro.2016.05.049 doi GBVA2017021000021.pica (DE-627)ELV025640577 (ELSEVIER)S0022-0248(16)30286-X DE-627 ger DE-627 rakwb eng 540 540 DE-600 610 VZ 570 540 VZ Nikolaev, V.I. verfasserin aut Growth and characterization of β-Ga2O3 crystals 2017transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Here we report on the growth and characterization of β-Ga2O3 bulk crystals and polycrystalline layer on different substrates. Bulk β-Ga2O3 crystals were produced by free crystallisation of gallium oxide melt in sapphire crucible. Transparent single crystals measuring up to 8mm across were obtained. Good structural quality was confirmed by x-ray diffraction rocking curve FWHM values of ~46″. Young’s modulus, shear modulus and hardness of the β-Ga2O3 crystals were measured by nanoindentation and Vickers microindentation techniques. Polycrystalline β-Ga2O3 films were deposited on silicon and sapphire substrates by sublimation method. It was found that structure and morphology of the films were greatly influenced by the material and orientation of the substrates. The best results were achieved on a-plane sapphire substrates where predominantly (111) oriented films were obtained. Here we report on the growth and characterization of β-Ga2O3 bulk crystals and polycrystalline layer on different substrates. Bulk β-Ga2O3 crystals were produced by free crystallisation of gallium oxide melt in sapphire crucible. Transparent single crystals measuring up to 8mm across were obtained. Good structural quality was confirmed by x-ray diffraction rocking curve FWHM values of ~46″. Young’s modulus, shear modulus and hardness of the β-Ga2O3 crystals were measured by nanoindentation and Vickers microindentation techniques. Polycrystalline β-Ga2O3 films were deposited on silicon and sapphire substrates by sublimation method. It was found that structure and morphology of the films were greatly influenced by the material and orientation of the substrates. The best results were achieved on a-plane sapphire substrates where predominantly (111) oriented films were obtained. B1. Oxides Elsevier A3. Physical vapour deposition processes Elsevier B2. Semiconducting gallium compounds Elsevier B1. Gallium compounds Elsevier A2. Growth from vapour Elsevier B2. Wide bandgap semiconductors Elsevier Maslov, V. oth Stepanov, S.I. oth Pechnikov, A.I. oth Krymov, V. oth Nikitina, I.P. oth Guzilova, L.I. oth Bougrov, V.E. oth Romanov, A.E. oth Enthalten in Elsevier The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting 2011 Amsterdam [u.a.] (DE-627)ELV010662650 volume:457 year:2017 day:1 month:01 pages:132-136 extent:5 https://doi.org/10.1016/j.jcrysgro.2016.05.049 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_22 GBV_ILN_40 GBV_ILN_105 AR 457 2017 1 0101 132-136 5 045F 540 |
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10.1016/j.jcrysgro.2016.05.049 doi GBVA2017021000021.pica (DE-627)ELV025640577 (ELSEVIER)S0022-0248(16)30286-X DE-627 ger DE-627 rakwb eng 540 540 DE-600 610 VZ 570 540 VZ Nikolaev, V.I. verfasserin aut Growth and characterization of β-Ga2O3 crystals 2017transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Here we report on the growth and characterization of β-Ga2O3 bulk crystals and polycrystalline layer on different substrates. Bulk β-Ga2O3 crystals were produced by free crystallisation of gallium oxide melt in sapphire crucible. Transparent single crystals measuring up to 8mm across were obtained. Good structural quality was confirmed by x-ray diffraction rocking curve FWHM values of ~46″. Young’s modulus, shear modulus and hardness of the β-Ga2O3 crystals were measured by nanoindentation and Vickers microindentation techniques. Polycrystalline β-Ga2O3 films were deposited on silicon and sapphire substrates by sublimation method. It was found that structure and morphology of the films were greatly influenced by the material and orientation of the substrates. The best results were achieved on a-plane sapphire substrates where predominantly (111) oriented films were obtained. Here we report on the growth and characterization of β-Ga2O3 bulk crystals and polycrystalline layer on different substrates. Bulk β-Ga2O3 crystals were produced by free crystallisation of gallium oxide melt in sapphire crucible. Transparent single crystals measuring up to 8mm across were obtained. Good structural quality was confirmed by x-ray diffraction rocking curve FWHM values of ~46″. Young’s modulus, shear modulus and hardness of the β-Ga2O3 crystals were measured by nanoindentation and Vickers microindentation techniques. Polycrystalline β-Ga2O3 films were deposited on silicon and sapphire substrates by sublimation method. It was found that structure and morphology of the films were greatly influenced by the material and orientation of the substrates. The best results were achieved on a-plane sapphire substrates where predominantly (111) oriented films were obtained. B1. Oxides Elsevier A3. Physical vapour deposition processes Elsevier B2. Semiconducting gallium compounds Elsevier B1. Gallium compounds Elsevier A2. Growth from vapour Elsevier B2. Wide bandgap semiconductors Elsevier Maslov, V. oth Stepanov, S.I. oth Pechnikov, A.I. oth Krymov, V. oth Nikitina, I.P. oth Guzilova, L.I. oth Bougrov, V.E. oth Romanov, A.E. oth Enthalten in Elsevier The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting 2011 Amsterdam [u.a.] (DE-627)ELV010662650 volume:457 year:2017 day:1 month:01 pages:132-136 extent:5 https://doi.org/10.1016/j.jcrysgro.2016.05.049 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_22 GBV_ILN_40 GBV_ILN_105 AR 457 2017 1 0101 132-136 5 045F 540 |
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10.1016/j.jcrysgro.2016.05.049 doi GBVA2017021000021.pica (DE-627)ELV025640577 (ELSEVIER)S0022-0248(16)30286-X DE-627 ger DE-627 rakwb eng 540 540 DE-600 610 VZ 570 540 VZ Nikolaev, V.I. verfasserin aut Growth and characterization of β-Ga2O3 crystals 2017transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Here we report on the growth and characterization of β-Ga2O3 bulk crystals and polycrystalline layer on different substrates. Bulk β-Ga2O3 crystals were produced by free crystallisation of gallium oxide melt in sapphire crucible. Transparent single crystals measuring up to 8mm across were obtained. Good structural quality was confirmed by x-ray diffraction rocking curve FWHM values of ~46″. Young’s modulus, shear modulus and hardness of the β-Ga2O3 crystals were measured by nanoindentation and Vickers microindentation techniques. Polycrystalline β-Ga2O3 films were deposited on silicon and sapphire substrates by sublimation method. It was found that structure and morphology of the films were greatly influenced by the material and orientation of the substrates. The best results were achieved on a-plane sapphire substrates where predominantly (111) oriented films were obtained. Here we report on the growth and characterization of β-Ga2O3 bulk crystals and polycrystalline layer on different substrates. Bulk β-Ga2O3 crystals were produced by free crystallisation of gallium oxide melt in sapphire crucible. Transparent single crystals measuring up to 8mm across were obtained. Good structural quality was confirmed by x-ray diffraction rocking curve FWHM values of ~46″. Young’s modulus, shear modulus and hardness of the β-Ga2O3 crystals were measured by nanoindentation and Vickers microindentation techniques. Polycrystalline β-Ga2O3 films were deposited on silicon and sapphire substrates by sublimation method. It was found that structure and morphology of the films were greatly influenced by the material and orientation of the substrates. The best results were achieved on a-plane sapphire substrates where predominantly (111) oriented films were obtained. B1. Oxides Elsevier A3. Physical vapour deposition processes Elsevier B2. Semiconducting gallium compounds Elsevier B1. Gallium compounds Elsevier A2. Growth from vapour Elsevier B2. Wide bandgap semiconductors Elsevier Maslov, V. oth Stepanov, S.I. oth Pechnikov, A.I. oth Krymov, V. oth Nikitina, I.P. oth Guzilova, L.I. oth Bougrov, V.E. oth Romanov, A.E. oth Enthalten in Elsevier The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting 2011 Amsterdam [u.a.] (DE-627)ELV010662650 volume:457 year:2017 day:1 month:01 pages:132-136 extent:5 https://doi.org/10.1016/j.jcrysgro.2016.05.049 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_22 GBV_ILN_40 GBV_ILN_105 AR 457 2017 1 0101 132-136 5 045F 540 |
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10.1016/j.jcrysgro.2016.05.049 doi GBVA2017021000021.pica (DE-627)ELV025640577 (ELSEVIER)S0022-0248(16)30286-X DE-627 ger DE-627 rakwb eng 540 540 DE-600 610 VZ 570 540 VZ Nikolaev, V.I. verfasserin aut Growth and characterization of β-Ga2O3 crystals 2017transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Here we report on the growth and characterization of β-Ga2O3 bulk crystals and polycrystalline layer on different substrates. Bulk β-Ga2O3 crystals were produced by free crystallisation of gallium oxide melt in sapphire crucible. Transparent single crystals measuring up to 8mm across were obtained. Good structural quality was confirmed by x-ray diffraction rocking curve FWHM values of ~46″. Young’s modulus, shear modulus and hardness of the β-Ga2O3 crystals were measured by nanoindentation and Vickers microindentation techniques. Polycrystalline β-Ga2O3 films were deposited on silicon and sapphire substrates by sublimation method. It was found that structure and morphology of the films were greatly influenced by the material and orientation of the substrates. The best results were achieved on a-plane sapphire substrates where predominantly (111) oriented films were obtained. Here we report on the growth and characterization of β-Ga2O3 bulk crystals and polycrystalline layer on different substrates. Bulk β-Ga2O3 crystals were produced by free crystallisation of gallium oxide melt in sapphire crucible. Transparent single crystals measuring up to 8mm across were obtained. Good structural quality was confirmed by x-ray diffraction rocking curve FWHM values of ~46″. Young’s modulus, shear modulus and hardness of the β-Ga2O3 crystals were measured by nanoindentation and Vickers microindentation techniques. Polycrystalline β-Ga2O3 films were deposited on silicon and sapphire substrates by sublimation method. It was found that structure and morphology of the films were greatly influenced by the material and orientation of the substrates. The best results were achieved on a-plane sapphire substrates where predominantly (111) oriented films were obtained. B1. Oxides Elsevier A3. Physical vapour deposition processes Elsevier B2. Semiconducting gallium compounds Elsevier B1. Gallium compounds Elsevier A2. Growth from vapour Elsevier B2. Wide bandgap semiconductors Elsevier Maslov, V. oth Stepanov, S.I. oth Pechnikov, A.I. oth Krymov, V. oth Nikitina, I.P. oth Guzilova, L.I. oth Bougrov, V.E. oth Romanov, A.E. oth Enthalten in Elsevier The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting 2011 Amsterdam [u.a.] (DE-627)ELV010662650 volume:457 year:2017 day:1 month:01 pages:132-136 extent:5 https://doi.org/10.1016/j.jcrysgro.2016.05.049 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_22 GBV_ILN_40 GBV_ILN_105 AR 457 2017 1 0101 132-136 5 045F 540 |
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Enthalten in The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting Amsterdam [u.a.] volume:457 year:2017 day:1 month:01 pages:132-136 extent:5 |
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Enthalten in The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting Amsterdam [u.a.] volume:457 year:2017 day:1 month:01 pages:132-136 extent:5 |
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Growth and characterization of β-Ga2O3 crystals |
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Here we report on the growth and characterization of β-Ga2O3 bulk crystals and polycrystalline layer on different substrates. Bulk β-Ga2O3 crystals were produced by free crystallisation of gallium oxide melt in sapphire crucible. Transparent single crystals measuring up to 8mm across were obtained. Good structural quality was confirmed by x-ray diffraction rocking curve FWHM values of ~46″. Young’s modulus, shear modulus and hardness of the β-Ga2O3 crystals were measured by nanoindentation and Vickers microindentation techniques. Polycrystalline β-Ga2O3 films were deposited on silicon and sapphire substrates by sublimation method. It was found that structure and morphology of the films were greatly influenced by the material and orientation of the substrates. The best results were achieved on a-plane sapphire substrates where predominantly (111) oriented films were obtained. |
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Here we report on the growth and characterization of β-Ga2O3 bulk crystals and polycrystalline layer on different substrates. Bulk β-Ga2O3 crystals were produced by free crystallisation of gallium oxide melt in sapphire crucible. Transparent single crystals measuring up to 8mm across were obtained. Good structural quality was confirmed by x-ray diffraction rocking curve FWHM values of ~46″. Young’s modulus, shear modulus and hardness of the β-Ga2O3 crystals were measured by nanoindentation and Vickers microindentation techniques. Polycrystalline β-Ga2O3 films were deposited on silicon and sapphire substrates by sublimation method. It was found that structure and morphology of the films were greatly influenced by the material and orientation of the substrates. The best results were achieved on a-plane sapphire substrates where predominantly (111) oriented films were obtained. |
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Here we report on the growth and characterization of β-Ga2O3 bulk crystals and polycrystalline layer on different substrates. Bulk β-Ga2O3 crystals were produced by free crystallisation of gallium oxide melt in sapphire crucible. Transparent single crystals measuring up to 8mm across were obtained. Good structural quality was confirmed by x-ray diffraction rocking curve FWHM values of ~46″. Young’s modulus, shear modulus and hardness of the β-Ga2O3 crystals were measured by nanoindentation and Vickers microindentation techniques. Polycrystalline β-Ga2O3 films were deposited on silicon and sapphire substrates by sublimation method. It was found that structure and morphology of the films were greatly influenced by the material and orientation of the substrates. The best results were achieved on a-plane sapphire substrates where predominantly (111) oriented films were obtained. |
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