Growth and characterization of β-Ga2O3 crystals
Here we report on the growth and characterization of β-Ga2O3 bulk crystals and polycrystalline layer on different substrates. Bulk β-Ga2O3 crystals were produced by free crystallisation of gallium oxide melt in sapphire crucible. Transparent single crystals measuring up to 8mm across were obtained....
Ausführliche Beschreibung
Autor*in: |
Nikolaev, V.I. [verfasserIn] |
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Format: |
E-Artikel |
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Sprache: |
Englisch |
Erschienen: |
2017transfer abstract |
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Schlagwörter: |
A3. Physical vapour deposition processes |
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Umfang: |
5 |
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Übergeordnetes Werk: |
Enthalten in: The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting - 2011, Amsterdam [u.a.] |
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Übergeordnetes Werk: |
volume:457 ; year:2017 ; day:1 ; month:01 ; pages:132-136 ; extent:5 |
Links: |
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DOI / URN: |
10.1016/j.jcrysgro.2016.05.049 |
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Katalog-ID: |
ELV025640577 |
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LEADER | 01000caa a22002652 4500 | ||
---|---|---|---|
001 | ELV025640577 | ||
003 | DE-627 | ||
005 | 20230625145101.0 | ||
007 | cr uuu---uuuuu | ||
008 | 180603s2017 xx |||||o 00| ||eng c | ||
024 | 7 | |a 10.1016/j.jcrysgro.2016.05.049 |2 doi | |
028 | 5 | 2 | |a GBVA2017021000021.pica |
035 | |a (DE-627)ELV025640577 | ||
035 | |a (ELSEVIER)S0022-0248(16)30286-X | ||
040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
041 | |a eng | ||
082 | 0 | |a 540 | |
082 | 0 | 4 | |a 540 |q DE-600 |
082 | 0 | 4 | |a 610 |q VZ |
082 | 0 | 4 | |a 570 |a 540 |q VZ |
100 | 1 | |a Nikolaev, V.I. |e verfasserin |4 aut | |
245 | 1 | 0 | |a Growth and characterization of β-Ga2O3 crystals |
264 | 1 | |c 2017transfer abstract | |
300 | |a 5 | ||
336 | |a nicht spezifiziert |b zzz |2 rdacontent | ||
337 | |a nicht spezifiziert |b z |2 rdamedia | ||
338 | |a nicht spezifiziert |b zu |2 rdacarrier | ||
520 | |a Here we report on the growth and characterization of β-Ga2O3 bulk crystals and polycrystalline layer on different substrates. Bulk β-Ga2O3 crystals were produced by free crystallisation of gallium oxide melt in sapphire crucible. Transparent single crystals measuring up to 8mm across were obtained. Good structural quality was confirmed by x-ray diffraction rocking curve FWHM values of ~46″. Young’s modulus, shear modulus and hardness of the β-Ga2O3 crystals were measured by nanoindentation and Vickers microindentation techniques. Polycrystalline β-Ga2O3 films were deposited on silicon and sapphire substrates by sublimation method. It was found that structure and morphology of the films were greatly influenced by the material and orientation of the substrates. The best results were achieved on a-plane sapphire substrates where predominantly (111) oriented films were obtained. | ||
520 | |a Here we report on the growth and characterization of β-Ga2O3 bulk crystals and polycrystalline layer on different substrates. Bulk β-Ga2O3 crystals were produced by free crystallisation of gallium oxide melt in sapphire crucible. Transparent single crystals measuring up to 8mm across were obtained. Good structural quality was confirmed by x-ray diffraction rocking curve FWHM values of ~46″. Young’s modulus, shear modulus and hardness of the β-Ga2O3 crystals were measured by nanoindentation and Vickers microindentation techniques. Polycrystalline β-Ga2O3 films were deposited on silicon and sapphire substrates by sublimation method. It was found that structure and morphology of the films were greatly influenced by the material and orientation of the substrates. The best results were achieved on a-plane sapphire substrates where predominantly (111) oriented films were obtained. | ||
650 | 7 | |a B1. Oxides |2 Elsevier | |
650 | 7 | |a A3. Physical vapour deposition processes |2 Elsevier | |
650 | 7 | |a B2. Semiconducting gallium compounds |2 Elsevier | |
650 | 7 | |a B1. Gallium compounds |2 Elsevier | |
650 | 7 | |a A2. Growth from vapour |2 Elsevier | |
650 | 7 | |a B2. Wide bandgap semiconductors |2 Elsevier | |
700 | 1 | |a Maslov, V. |4 oth | |
700 | 1 | |a Stepanov, S.I. |4 oth | |
700 | 1 | |a Pechnikov, A.I. |4 oth | |
700 | 1 | |a Krymov, V. |4 oth | |
700 | 1 | |a Nikitina, I.P. |4 oth | |
700 | 1 | |a Guzilova, L.I. |4 oth | |
700 | 1 | |a Bougrov, V.E. |4 oth | |
700 | 1 | |a Romanov, A.E. |4 oth | |
773 | 0 | 8 | |i Enthalten in |n Elsevier |t The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting |d 2011 |g Amsterdam [u.a.] |w (DE-627)ELV010662650 |
773 | 1 | 8 | |g volume:457 |g year:2017 |g day:1 |g month:01 |g pages:132-136 |g extent:5 |
856 | 4 | 0 | |u https://doi.org/10.1016/j.jcrysgro.2016.05.049 |3 Volltext |
912 | |a GBV_USEFLAG_U | ||
912 | |a GBV_ELV | ||
912 | |a SYSFLAG_U | ||
912 | |a SSG-OLC-PHA | ||
912 | |a GBV_ILN_22 | ||
912 | |a GBV_ILN_40 | ||
912 | |a GBV_ILN_105 | ||
951 | |a AR | ||
952 | |d 457 |j 2017 |b 1 |c 0101 |h 132-136 |g 5 | ||
953 | |2 045F |a 540 |
author_variant |
v n vn |
---|---|
matchkey_str |
nikolaevvimaslovvstepanovsipechnikovaikr:2017----:rwhncaatrztoog2 |
hierarchy_sort_str |
2017transfer abstract |
publishDate |
2017 |
allfields |
10.1016/j.jcrysgro.2016.05.049 doi GBVA2017021000021.pica (DE-627)ELV025640577 (ELSEVIER)S0022-0248(16)30286-X DE-627 ger DE-627 rakwb eng 540 540 DE-600 610 VZ 570 540 VZ Nikolaev, V.I. verfasserin aut Growth and characterization of β-Ga2O3 crystals 2017transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Here we report on the growth and characterization of β-Ga2O3 bulk crystals and polycrystalline layer on different substrates. Bulk β-Ga2O3 crystals were produced by free crystallisation of gallium oxide melt in sapphire crucible. Transparent single crystals measuring up to 8mm across were obtained. Good structural quality was confirmed by x-ray diffraction rocking curve FWHM values of ~46″. Young’s modulus, shear modulus and hardness of the β-Ga2O3 crystals were measured by nanoindentation and Vickers microindentation techniques. Polycrystalline β-Ga2O3 films were deposited on silicon and sapphire substrates by sublimation method. It was found that structure and morphology of the films were greatly influenced by the material and orientation of the substrates. The best results were achieved on a-plane sapphire substrates where predominantly (111) oriented films were obtained. Here we report on the growth and characterization of β-Ga2O3 bulk crystals and polycrystalline layer on different substrates. Bulk β-Ga2O3 crystals were produced by free crystallisation of gallium oxide melt in sapphire crucible. Transparent single crystals measuring up to 8mm across were obtained. Good structural quality was confirmed by x-ray diffraction rocking curve FWHM values of ~46″. Young’s modulus, shear modulus and hardness of the β-Ga2O3 crystals were measured by nanoindentation and Vickers microindentation techniques. Polycrystalline β-Ga2O3 films were deposited on silicon and sapphire substrates by sublimation method. It was found that structure and morphology of the films were greatly influenced by the material and orientation of the substrates. The best results were achieved on a-plane sapphire substrates where predominantly (111) oriented films were obtained. B1. Oxides Elsevier A3. Physical vapour deposition processes Elsevier B2. Semiconducting gallium compounds Elsevier B1. Gallium compounds Elsevier A2. Growth from vapour Elsevier B2. Wide bandgap semiconductors Elsevier Maslov, V. oth Stepanov, S.I. oth Pechnikov, A.I. oth Krymov, V. oth Nikitina, I.P. oth Guzilova, L.I. oth Bougrov, V.E. oth Romanov, A.E. oth Enthalten in Elsevier The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting 2011 Amsterdam [u.a.] (DE-627)ELV010662650 volume:457 year:2017 day:1 month:01 pages:132-136 extent:5 https://doi.org/10.1016/j.jcrysgro.2016.05.049 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_22 GBV_ILN_40 GBV_ILN_105 AR 457 2017 1 0101 132-136 5 045F 540 |
spelling |
10.1016/j.jcrysgro.2016.05.049 doi GBVA2017021000021.pica (DE-627)ELV025640577 (ELSEVIER)S0022-0248(16)30286-X DE-627 ger DE-627 rakwb eng 540 540 DE-600 610 VZ 570 540 VZ Nikolaev, V.I. verfasserin aut Growth and characterization of β-Ga2O3 crystals 2017transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Here we report on the growth and characterization of β-Ga2O3 bulk crystals and polycrystalline layer on different substrates. Bulk β-Ga2O3 crystals were produced by free crystallisation of gallium oxide melt in sapphire crucible. Transparent single crystals measuring up to 8mm across were obtained. Good structural quality was confirmed by x-ray diffraction rocking curve FWHM values of ~46″. Young’s modulus, shear modulus and hardness of the β-Ga2O3 crystals were measured by nanoindentation and Vickers microindentation techniques. Polycrystalline β-Ga2O3 films were deposited on silicon and sapphire substrates by sublimation method. It was found that structure and morphology of the films were greatly influenced by the material and orientation of the substrates. The best results were achieved on a-plane sapphire substrates where predominantly (111) oriented films were obtained. Here we report on the growth and characterization of β-Ga2O3 bulk crystals and polycrystalline layer on different substrates. Bulk β-Ga2O3 crystals were produced by free crystallisation of gallium oxide melt in sapphire crucible. Transparent single crystals measuring up to 8mm across were obtained. Good structural quality was confirmed by x-ray diffraction rocking curve FWHM values of ~46″. Young’s modulus, shear modulus and hardness of the β-Ga2O3 crystals were measured by nanoindentation and Vickers microindentation techniques. Polycrystalline β-Ga2O3 films were deposited on silicon and sapphire substrates by sublimation method. It was found that structure and morphology of the films were greatly influenced by the material and orientation of the substrates. The best results were achieved on a-plane sapphire substrates where predominantly (111) oriented films were obtained. B1. Oxides Elsevier A3. Physical vapour deposition processes Elsevier B2. Semiconducting gallium compounds Elsevier B1. Gallium compounds Elsevier A2. Growth from vapour Elsevier B2. Wide bandgap semiconductors Elsevier Maslov, V. oth Stepanov, S.I. oth Pechnikov, A.I. oth Krymov, V. oth Nikitina, I.P. oth Guzilova, L.I. oth Bougrov, V.E. oth Romanov, A.E. oth Enthalten in Elsevier The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting 2011 Amsterdam [u.a.] (DE-627)ELV010662650 volume:457 year:2017 day:1 month:01 pages:132-136 extent:5 https://doi.org/10.1016/j.jcrysgro.2016.05.049 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_22 GBV_ILN_40 GBV_ILN_105 AR 457 2017 1 0101 132-136 5 045F 540 |
allfields_unstemmed |
10.1016/j.jcrysgro.2016.05.049 doi GBVA2017021000021.pica (DE-627)ELV025640577 (ELSEVIER)S0022-0248(16)30286-X DE-627 ger DE-627 rakwb eng 540 540 DE-600 610 VZ 570 540 VZ Nikolaev, V.I. verfasserin aut Growth and characterization of β-Ga2O3 crystals 2017transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Here we report on the growth and characterization of β-Ga2O3 bulk crystals and polycrystalline layer on different substrates. Bulk β-Ga2O3 crystals were produced by free crystallisation of gallium oxide melt in sapphire crucible. Transparent single crystals measuring up to 8mm across were obtained. Good structural quality was confirmed by x-ray diffraction rocking curve FWHM values of ~46″. Young’s modulus, shear modulus and hardness of the β-Ga2O3 crystals were measured by nanoindentation and Vickers microindentation techniques. Polycrystalline β-Ga2O3 films were deposited on silicon and sapphire substrates by sublimation method. It was found that structure and morphology of the films were greatly influenced by the material and orientation of the substrates. The best results were achieved on a-plane sapphire substrates where predominantly (111) oriented films were obtained. Here we report on the growth and characterization of β-Ga2O3 bulk crystals and polycrystalline layer on different substrates. Bulk β-Ga2O3 crystals were produced by free crystallisation of gallium oxide melt in sapphire crucible. Transparent single crystals measuring up to 8mm across were obtained. Good structural quality was confirmed by x-ray diffraction rocking curve FWHM values of ~46″. Young’s modulus, shear modulus and hardness of the β-Ga2O3 crystals were measured by nanoindentation and Vickers microindentation techniques. Polycrystalline β-Ga2O3 films were deposited on silicon and sapphire substrates by sublimation method. It was found that structure and morphology of the films were greatly influenced by the material and orientation of the substrates. The best results were achieved on a-plane sapphire substrates where predominantly (111) oriented films were obtained. B1. Oxides Elsevier A3. Physical vapour deposition processes Elsevier B2. Semiconducting gallium compounds Elsevier B1. Gallium compounds Elsevier A2. Growth from vapour Elsevier B2. Wide bandgap semiconductors Elsevier Maslov, V. oth Stepanov, S.I. oth Pechnikov, A.I. oth Krymov, V. oth Nikitina, I.P. oth Guzilova, L.I. oth Bougrov, V.E. oth Romanov, A.E. oth Enthalten in Elsevier The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting 2011 Amsterdam [u.a.] (DE-627)ELV010662650 volume:457 year:2017 day:1 month:01 pages:132-136 extent:5 https://doi.org/10.1016/j.jcrysgro.2016.05.049 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_22 GBV_ILN_40 GBV_ILN_105 AR 457 2017 1 0101 132-136 5 045F 540 |
allfieldsGer |
10.1016/j.jcrysgro.2016.05.049 doi GBVA2017021000021.pica (DE-627)ELV025640577 (ELSEVIER)S0022-0248(16)30286-X DE-627 ger DE-627 rakwb eng 540 540 DE-600 610 VZ 570 540 VZ Nikolaev, V.I. verfasserin aut Growth and characterization of β-Ga2O3 crystals 2017transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Here we report on the growth and characterization of β-Ga2O3 bulk crystals and polycrystalline layer on different substrates. Bulk β-Ga2O3 crystals were produced by free crystallisation of gallium oxide melt in sapphire crucible. Transparent single crystals measuring up to 8mm across were obtained. Good structural quality was confirmed by x-ray diffraction rocking curve FWHM values of ~46″. Young’s modulus, shear modulus and hardness of the β-Ga2O3 crystals were measured by nanoindentation and Vickers microindentation techniques. Polycrystalline β-Ga2O3 films were deposited on silicon and sapphire substrates by sublimation method. It was found that structure and morphology of the films were greatly influenced by the material and orientation of the substrates. The best results were achieved on a-plane sapphire substrates where predominantly (111) oriented films were obtained. Here we report on the growth and characterization of β-Ga2O3 bulk crystals and polycrystalline layer on different substrates. Bulk β-Ga2O3 crystals were produced by free crystallisation of gallium oxide melt in sapphire crucible. Transparent single crystals measuring up to 8mm across were obtained. Good structural quality was confirmed by x-ray diffraction rocking curve FWHM values of ~46″. Young’s modulus, shear modulus and hardness of the β-Ga2O3 crystals were measured by nanoindentation and Vickers microindentation techniques. Polycrystalline β-Ga2O3 films were deposited on silicon and sapphire substrates by sublimation method. It was found that structure and morphology of the films were greatly influenced by the material and orientation of the substrates. The best results were achieved on a-plane sapphire substrates where predominantly (111) oriented films were obtained. B1. Oxides Elsevier A3. Physical vapour deposition processes Elsevier B2. Semiconducting gallium compounds Elsevier B1. Gallium compounds Elsevier A2. Growth from vapour Elsevier B2. Wide bandgap semiconductors Elsevier Maslov, V. oth Stepanov, S.I. oth Pechnikov, A.I. oth Krymov, V. oth Nikitina, I.P. oth Guzilova, L.I. oth Bougrov, V.E. oth Romanov, A.E. oth Enthalten in Elsevier The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting 2011 Amsterdam [u.a.] (DE-627)ELV010662650 volume:457 year:2017 day:1 month:01 pages:132-136 extent:5 https://doi.org/10.1016/j.jcrysgro.2016.05.049 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_22 GBV_ILN_40 GBV_ILN_105 AR 457 2017 1 0101 132-136 5 045F 540 |
allfieldsSound |
10.1016/j.jcrysgro.2016.05.049 doi GBVA2017021000021.pica (DE-627)ELV025640577 (ELSEVIER)S0022-0248(16)30286-X DE-627 ger DE-627 rakwb eng 540 540 DE-600 610 VZ 570 540 VZ Nikolaev, V.I. verfasserin aut Growth and characterization of β-Ga2O3 crystals 2017transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Here we report on the growth and characterization of β-Ga2O3 bulk crystals and polycrystalline layer on different substrates. Bulk β-Ga2O3 crystals were produced by free crystallisation of gallium oxide melt in sapphire crucible. Transparent single crystals measuring up to 8mm across were obtained. Good structural quality was confirmed by x-ray diffraction rocking curve FWHM values of ~46″. Young’s modulus, shear modulus and hardness of the β-Ga2O3 crystals were measured by nanoindentation and Vickers microindentation techniques. Polycrystalline β-Ga2O3 films were deposited on silicon and sapphire substrates by sublimation method. It was found that structure and morphology of the films were greatly influenced by the material and orientation of the substrates. The best results were achieved on a-plane sapphire substrates where predominantly (111) oriented films were obtained. Here we report on the growth and characterization of β-Ga2O3 bulk crystals and polycrystalline layer on different substrates. Bulk β-Ga2O3 crystals were produced by free crystallisation of gallium oxide melt in sapphire crucible. Transparent single crystals measuring up to 8mm across were obtained. Good structural quality was confirmed by x-ray diffraction rocking curve FWHM values of ~46″. Young’s modulus, shear modulus and hardness of the β-Ga2O3 crystals were measured by nanoindentation and Vickers microindentation techniques. Polycrystalline β-Ga2O3 films were deposited on silicon and sapphire substrates by sublimation method. It was found that structure and morphology of the films were greatly influenced by the material and orientation of the substrates. The best results were achieved on a-plane sapphire substrates where predominantly (111) oriented films were obtained. B1. Oxides Elsevier A3. Physical vapour deposition processes Elsevier B2. Semiconducting gallium compounds Elsevier B1. Gallium compounds Elsevier A2. Growth from vapour Elsevier B2. Wide bandgap semiconductors Elsevier Maslov, V. oth Stepanov, S.I. oth Pechnikov, A.I. oth Krymov, V. oth Nikitina, I.P. oth Guzilova, L.I. oth Bougrov, V.E. oth Romanov, A.E. oth Enthalten in Elsevier The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting 2011 Amsterdam [u.a.] (DE-627)ELV010662650 volume:457 year:2017 day:1 month:01 pages:132-136 extent:5 https://doi.org/10.1016/j.jcrysgro.2016.05.049 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_22 GBV_ILN_40 GBV_ILN_105 AR 457 2017 1 0101 132-136 5 045F 540 |
language |
English |
source |
Enthalten in The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting Amsterdam [u.a.] volume:457 year:2017 day:1 month:01 pages:132-136 extent:5 |
sourceStr |
Enthalten in The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting Amsterdam [u.a.] volume:457 year:2017 day:1 month:01 pages:132-136 extent:5 |
format_phy_str_mv |
Article |
institution |
findex.gbv.de |
topic_facet |
B1. Oxides A3. Physical vapour deposition processes B2. Semiconducting gallium compounds B1. Gallium compounds A2. Growth from vapour B2. Wide bandgap semiconductors |
dewey-raw |
540 |
isfreeaccess_bool |
false |
container_title |
The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting |
authorswithroles_txt_mv |
Nikolaev, V.I. @@aut@@ Maslov, V. @@oth@@ Stepanov, S.I. @@oth@@ Pechnikov, A.I. @@oth@@ Krymov, V. @@oth@@ Nikitina, I.P. @@oth@@ Guzilova, L.I. @@oth@@ Bougrov, V.E. @@oth@@ Romanov, A.E. @@oth@@ |
publishDateDaySort_date |
2017-01-01T00:00:00Z |
hierarchy_top_id |
ELV010662650 |
dewey-sort |
3540 |
id |
ELV025640577 |
language_de |
englisch |
fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV025640577</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230625145101.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">180603s2017 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.jcrysgro.2016.05.049</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">GBVA2017021000021.pica</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV025640577</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S0022-0248(16)30286-X</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">540</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">540</subfield><subfield code="q">DE-600</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">610</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">570</subfield><subfield code="a">540</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Nikolaev, V.I.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Growth and characterization of β-Ga2O3 crystals</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2017transfer abstract</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">5</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Here we report on the growth and characterization of β-Ga2O3 bulk crystals and polycrystalline layer on different substrates. Bulk β-Ga2O3 crystals were produced by free crystallisation of gallium oxide melt in sapphire crucible. Transparent single crystals measuring up to 8mm across were obtained. Good structural quality was confirmed by x-ray diffraction rocking curve FWHM values of ~46″. Young’s modulus, shear modulus and hardness of the β-Ga2O3 crystals were measured by nanoindentation and Vickers microindentation techniques. Polycrystalline β-Ga2O3 films were deposited on silicon and sapphire substrates by sublimation method. It was found that structure and morphology of the films were greatly influenced by the material and orientation of the substrates. The best results were achieved on a-plane sapphire substrates where predominantly (111) oriented films were obtained.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Here we report on the growth and characterization of β-Ga2O3 bulk crystals and polycrystalline layer on different substrates. Bulk β-Ga2O3 crystals were produced by free crystallisation of gallium oxide melt in sapphire crucible. Transparent single crystals measuring up to 8mm across were obtained. Good structural quality was confirmed by x-ray diffraction rocking curve FWHM values of ~46″. Young’s modulus, shear modulus and hardness of the β-Ga2O3 crystals were measured by nanoindentation and Vickers microindentation techniques. Polycrystalline β-Ga2O3 films were deposited on silicon and sapphire substrates by sublimation method. It was found that structure and morphology of the films were greatly influenced by the material and orientation of the substrates. The best results were achieved on a-plane sapphire substrates where predominantly (111) oriented films were obtained.</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">B1. Oxides</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">A3. Physical vapour deposition processes</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">B2. Semiconducting gallium compounds</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">B1. Gallium compounds</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">A2. Growth from vapour</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">B2. Wide bandgap semiconductors</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Maslov, V.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Stepanov, S.I.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Pechnikov, A.I.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Krymov, V.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Nikitina, I.P.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Guzilova, L.I.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Bougrov, V.E.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Romanov, A.E.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="n">Elsevier</subfield><subfield code="t">The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting</subfield><subfield code="d">2011</subfield><subfield code="g">Amsterdam [u.a.]</subfield><subfield code="w">(DE-627)ELV010662650</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:457</subfield><subfield code="g">year:2017</subfield><subfield code="g">day:1</subfield><subfield code="g">month:01</subfield><subfield code="g">pages:132-136</subfield><subfield code="g">extent:5</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1016/j.jcrysgro.2016.05.049</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHA</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">457</subfield><subfield code="j">2017</subfield><subfield code="b">1</subfield><subfield code="c">0101</subfield><subfield code="h">132-136</subfield><subfield code="g">5</subfield></datafield><datafield tag="953" ind1=" " ind2=" "><subfield code="2">045F</subfield><subfield code="a">540</subfield></datafield></record></collection>
|
author |
Nikolaev, V.I. |
spellingShingle |
Nikolaev, V.I. ddc 540 ddc 610 ddc 570 Elsevier B1. Oxides Elsevier A3. Physical vapour deposition processes Elsevier B2. Semiconducting gallium compounds Elsevier B1. Gallium compounds Elsevier A2. Growth from vapour Elsevier B2. Wide bandgap semiconductors Growth and characterization of β-Ga2O3 crystals |
authorStr |
Nikolaev, V.I. |
ppnlink_with_tag_str_mv |
@@773@@(DE-627)ELV010662650 |
format |
electronic Article |
dewey-ones |
540 - Chemistry & allied sciences 610 - Medicine & health 570 - Life sciences; biology |
delete_txt_mv |
keep |
author_role |
aut |
collection |
elsevier |
remote_str |
true |
illustrated |
Not Illustrated |
topic_title |
540 540 DE-600 610 VZ 570 540 VZ Growth and characterization of β-Ga2O3 crystals B1. Oxides Elsevier A3. Physical vapour deposition processes Elsevier B2. Semiconducting gallium compounds Elsevier B1. Gallium compounds Elsevier A2. Growth from vapour Elsevier B2. Wide bandgap semiconductors Elsevier |
topic |
ddc 540 ddc 610 ddc 570 Elsevier B1. Oxides Elsevier A3. Physical vapour deposition processes Elsevier B2. Semiconducting gallium compounds Elsevier B1. Gallium compounds Elsevier A2. Growth from vapour Elsevier B2. Wide bandgap semiconductors |
topic_unstemmed |
ddc 540 ddc 610 ddc 570 Elsevier B1. Oxides Elsevier A3. Physical vapour deposition processes Elsevier B2. Semiconducting gallium compounds Elsevier B1. Gallium compounds Elsevier A2. Growth from vapour Elsevier B2. Wide bandgap semiconductors |
topic_browse |
ddc 540 ddc 610 ddc 570 Elsevier B1. Oxides Elsevier A3. Physical vapour deposition processes Elsevier B2. Semiconducting gallium compounds Elsevier B1. Gallium compounds Elsevier A2. Growth from vapour Elsevier B2. Wide bandgap semiconductors |
format_facet |
Elektronische Aufsätze Aufsätze Elektronische Ressource |
format_main_str_mv |
Text Zeitschrift/Artikel |
carriertype_str_mv |
zu |
author2_variant |
v m vm s s ss a p ap v k vk i n in l g lg v b vb a r ar |
hierarchy_parent_title |
The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting |
hierarchy_parent_id |
ELV010662650 |
dewey-tens |
540 - Chemistry 610 - Medicine & health 570 - Life sciences; biology |
hierarchy_top_title |
The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting |
isfreeaccess_txt |
false |
familylinks_str_mv |
(DE-627)ELV010662650 |
title |
Growth and characterization of β-Ga2O3 crystals |
ctrlnum |
(DE-627)ELV025640577 (ELSEVIER)S0022-0248(16)30286-X |
title_full |
Growth and characterization of β-Ga2O3 crystals |
author_sort |
Nikolaev, V.I. |
journal |
The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting |
journalStr |
The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting |
lang_code |
eng |
isOA_bool |
false |
dewey-hundreds |
500 - Science 600 - Technology |
recordtype |
marc |
publishDateSort |
2017 |
contenttype_str_mv |
zzz |
container_start_page |
132 |
author_browse |
Nikolaev, V.I. |
container_volume |
457 |
physical |
5 |
class |
540 540 DE-600 610 VZ 570 540 VZ |
format_se |
Elektronische Aufsätze |
author-letter |
Nikolaev, V.I. |
doi_str_mv |
10.1016/j.jcrysgro.2016.05.049 |
dewey-full |
540 610 570 |
title_sort |
growth and characterization of β-ga2o3 crystals |
title_auth |
Growth and characterization of β-Ga2O3 crystals |
abstract |
Here we report on the growth and characterization of β-Ga2O3 bulk crystals and polycrystalline layer on different substrates. Bulk β-Ga2O3 crystals were produced by free crystallisation of gallium oxide melt in sapphire crucible. Transparent single crystals measuring up to 8mm across were obtained. Good structural quality was confirmed by x-ray diffraction rocking curve FWHM values of ~46″. Young’s modulus, shear modulus and hardness of the β-Ga2O3 crystals were measured by nanoindentation and Vickers microindentation techniques. Polycrystalline β-Ga2O3 films were deposited on silicon and sapphire substrates by sublimation method. It was found that structure and morphology of the films were greatly influenced by the material and orientation of the substrates. The best results were achieved on a-plane sapphire substrates where predominantly (111) oriented films were obtained. |
abstractGer |
Here we report on the growth and characterization of β-Ga2O3 bulk crystals and polycrystalline layer on different substrates. Bulk β-Ga2O3 crystals were produced by free crystallisation of gallium oxide melt in sapphire crucible. Transparent single crystals measuring up to 8mm across were obtained. Good structural quality was confirmed by x-ray diffraction rocking curve FWHM values of ~46″. Young’s modulus, shear modulus and hardness of the β-Ga2O3 crystals were measured by nanoindentation and Vickers microindentation techniques. Polycrystalline β-Ga2O3 films were deposited on silicon and sapphire substrates by sublimation method. It was found that structure and morphology of the films were greatly influenced by the material and orientation of the substrates. The best results were achieved on a-plane sapphire substrates where predominantly (111) oriented films were obtained. |
abstract_unstemmed |
Here we report on the growth and characterization of β-Ga2O3 bulk crystals and polycrystalline layer on different substrates. Bulk β-Ga2O3 crystals were produced by free crystallisation of gallium oxide melt in sapphire crucible. Transparent single crystals measuring up to 8mm across were obtained. Good structural quality was confirmed by x-ray diffraction rocking curve FWHM values of ~46″. Young’s modulus, shear modulus and hardness of the β-Ga2O3 crystals were measured by nanoindentation and Vickers microindentation techniques. Polycrystalline β-Ga2O3 films were deposited on silicon and sapphire substrates by sublimation method. It was found that structure and morphology of the films were greatly influenced by the material and orientation of the substrates. The best results were achieved on a-plane sapphire substrates where predominantly (111) oriented films were obtained. |
collection_details |
GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_22 GBV_ILN_40 GBV_ILN_105 |
title_short |
Growth and characterization of β-Ga2O3 crystals |
url |
https://doi.org/10.1016/j.jcrysgro.2016.05.049 |
remote_bool |
true |
author2 |
Maslov, V. Stepanov, S.I. Pechnikov, A.I. Krymov, V. Nikitina, I.P. Guzilova, L.I. Bougrov, V.E. Romanov, A.E. |
author2Str |
Maslov, V. Stepanov, S.I. Pechnikov, A.I. Krymov, V. Nikitina, I.P. Guzilova, L.I. Bougrov, V.E. Romanov, A.E. |
ppnlink |
ELV010662650 |
mediatype_str_mv |
z |
isOA_txt |
false |
hochschulschrift_bool |
false |
author2_role |
oth oth oth oth oth oth oth oth |
doi_str |
10.1016/j.jcrysgro.2016.05.049 |
up_date |
2024-07-06T18:04:59.090Z |
_version_ |
1803853862369492992 |
fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV025640577</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230625145101.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">180603s2017 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.jcrysgro.2016.05.049</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">GBVA2017021000021.pica</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV025640577</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S0022-0248(16)30286-X</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">540</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">540</subfield><subfield code="q">DE-600</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">610</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">570</subfield><subfield code="a">540</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Nikolaev, V.I.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Growth and characterization of β-Ga2O3 crystals</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2017transfer abstract</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">5</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Here we report on the growth and characterization of β-Ga2O3 bulk crystals and polycrystalline layer on different substrates. Bulk β-Ga2O3 crystals were produced by free crystallisation of gallium oxide melt in sapphire crucible. Transparent single crystals measuring up to 8mm across were obtained. Good structural quality was confirmed by x-ray diffraction rocking curve FWHM values of ~46″. Young’s modulus, shear modulus and hardness of the β-Ga2O3 crystals were measured by nanoindentation and Vickers microindentation techniques. Polycrystalline β-Ga2O3 films were deposited on silicon and sapphire substrates by sublimation method. It was found that structure and morphology of the films were greatly influenced by the material and orientation of the substrates. The best results were achieved on a-plane sapphire substrates where predominantly (111) oriented films were obtained.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Here we report on the growth and characterization of β-Ga2O3 bulk crystals and polycrystalline layer on different substrates. Bulk β-Ga2O3 crystals were produced by free crystallisation of gallium oxide melt in sapphire crucible. Transparent single crystals measuring up to 8mm across were obtained. Good structural quality was confirmed by x-ray diffraction rocking curve FWHM values of ~46″. Young’s modulus, shear modulus and hardness of the β-Ga2O3 crystals were measured by nanoindentation and Vickers microindentation techniques. Polycrystalline β-Ga2O3 films were deposited on silicon and sapphire substrates by sublimation method. It was found that structure and morphology of the films were greatly influenced by the material and orientation of the substrates. The best results were achieved on a-plane sapphire substrates where predominantly (111) oriented films were obtained.</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">B1. Oxides</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">A3. Physical vapour deposition processes</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">B2. Semiconducting gallium compounds</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">B1. Gallium compounds</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">A2. Growth from vapour</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">B2. Wide bandgap semiconductors</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Maslov, V.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Stepanov, S.I.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Pechnikov, A.I.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Krymov, V.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Nikitina, I.P.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Guzilova, L.I.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Bougrov, V.E.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Romanov, A.E.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="n">Elsevier</subfield><subfield code="t">The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting</subfield><subfield code="d">2011</subfield><subfield code="g">Amsterdam [u.a.]</subfield><subfield code="w">(DE-627)ELV010662650</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:457</subfield><subfield code="g">year:2017</subfield><subfield code="g">day:1</subfield><subfield code="g">month:01</subfield><subfield code="g">pages:132-136</subfield><subfield code="g">extent:5</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1016/j.jcrysgro.2016.05.049</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHA</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">457</subfield><subfield code="j">2017</subfield><subfield code="b">1</subfield><subfield code="c">0101</subfield><subfield code="h">132-136</subfield><subfield code="g">5</subfield></datafield><datafield tag="953" ind1=" " ind2=" "><subfield code="2">045F</subfield><subfield code="a">540</subfield></datafield></record></collection>
|
score |
7.397687 |