Tracing the incorporation of water in SiO2/SiC structures formed by oxide deposition and thermal oxidation
Water vapor incorporation in SiO2 films, obtained by thermal oxidation and/or sputter deposition, on SiC and Si was investigated. Isotopically enriched water was used to allow the 2H (deuterium) quantification and the 18O profiling by nuclear reaction analyses. The incorporation of hydrogen from wat...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Corrêa, S.A. [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
2014transfer abstract |
|---|
| Schlagwörter: |
|---|
| Umfang: |
3 |
|---|
| Übergeordnetes Werk: |
Enthalten in: Editorial Comment - Unwala, Darius J. ELSEVIER, 2013, a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics, Amsterdam [u.a.] |
|---|---|
| Übergeordnetes Werk: |
volume:332 ; year:2014 ; day:1 ; month:08 ; pages:19-21 ; extent:3 |
| Links: |
|---|
| DOI / URN: |
10.1016/j.nimb.2014.02.021 |
|---|
| Katalog-ID: |
ELV027936104 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | ELV027936104 | ||
| 003 | DE-627 | ||
| 005 | 20230625152659.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 180603s2014 xx |||||o 00| ||eng c | ||
| 024 | 7 | |a 10.1016/j.nimb.2014.02.021 |2 doi | |
| 028 | 5 | 2 | |a GBVA2014005000027.pica |
| 035 | |a (DE-627)ELV027936104 | ||
| 035 | |a (ELSEVIER)S0168-583X(14)00278-X | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 082 | 0 | |a 530 | |
| 082 | 0 | 4 | |a 530 |q DE-600 |
| 082 | 0 | 4 | |a 610 |q VZ |
| 082 | 0 | 4 | |a 610 |q VZ |
| 084 | |a 44.85 |2 bkl | ||
| 100 | 1 | |a Corrêa, S.A. |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Tracing the incorporation of water in SiO2/SiC structures formed by oxide deposition and thermal oxidation |
| 264 | 1 | |c 2014transfer abstract | |
| 300 | |a 3 | ||
| 336 | |a nicht spezifiziert |b zzz |2 rdacontent | ||
| 337 | |a nicht spezifiziert |b z |2 rdamedia | ||
| 338 | |a nicht spezifiziert |b zu |2 rdacarrier | ||
| 520 | |a Water vapor incorporation in SiO2 films, obtained by thermal oxidation and/or sputter deposition, on SiC and Si was investigated. Isotopically enriched water was used to allow the 2H (deuterium) quantification and the 18O profiling by nuclear reaction analyses. The incorporation of hydrogen from water vapor in SiO2/SiC and SiO2/Si structures, whose films were deposited by sputtering, occurred mainly in the SiO2 film/substrate interfacial region. Exposure to water vapor led to isotopic exchange between oxygen from the water vapor and oxygen from SiO2 films deposited on SiC and on Si substrates. Longer thermal oxidation times of the SiC prior to the deposition of the SiO2 film led to larger amounts of D incorporated. The thermal growth of a very thin SiO2 film followed by the deposition of SiO2 led to the lowest amounts of D incorporated. These results were correlated with the improvement in the electrical characteristics observed for SiO2/SiC structures obtained by these routes. | ||
| 520 | |a Water vapor incorporation in SiO2 films, obtained by thermal oxidation and/or sputter deposition, on SiC and Si was investigated. Isotopically enriched water was used to allow the 2H (deuterium) quantification and the 18O profiling by nuclear reaction analyses. The incorporation of hydrogen from water vapor in SiO2/SiC and SiO2/Si structures, whose films were deposited by sputtering, occurred mainly in the SiO2 film/substrate interfacial region. Exposure to water vapor led to isotopic exchange between oxygen from the water vapor and oxygen from SiO2 films deposited on SiC and on Si substrates. Longer thermal oxidation times of the SiC prior to the deposition of the SiO2 film led to larger amounts of D incorporated. The thermal growth of a very thin SiO2 film followed by the deposition of SiO2 led to the lowest amounts of D incorporated. These results were correlated with the improvement in the electrical characteristics observed for SiO2/SiC structures obtained by these routes. | ||
| 650 | 7 | |a Nuclear reaction analysis |2 Elsevier | |
| 650 | 7 | |a Silicon carbide |2 Elsevier | |
| 650 | 7 | |a SiO2 films |2 Elsevier | |
| 650 | 7 | |a Silicon |2 Elsevier | |
| 650 | 7 | |a Water vapor |2 Elsevier | |
| 700 | 1 | |a Pitthan, E. |4 oth | |
| 700 | 1 | |a Soares, G.V. |4 oth | |
| 700 | 1 | |a Stedile, F.C. |4 oth | |
| 773 | 0 | 8 | |i Enthalten in |n Elsevier |a Unwala, Darius J. ELSEVIER |t Editorial Comment |d 2013 |d a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics |g Amsterdam [u.a.] |w (DE-627)ELV011304669 |
| 773 | 1 | 8 | |g volume:332 |g year:2014 |g day:1 |g month:08 |g pages:19-21 |g extent:3 |
| 856 | 4 | 0 | |u https://doi.org/10.1016/j.nimb.2014.02.021 |3 Volltext |
| 912 | |a GBV_USEFLAG_U | ||
| 912 | |a GBV_ELV | ||
| 912 | |a SYSFLAG_U | ||
| 912 | |a SSG-OLC-PHA | ||
| 912 | |a GBV_ILN_21 | ||
| 912 | |a GBV_ILN_22 | ||
| 912 | |a GBV_ILN_24 | ||
| 912 | |a GBV_ILN_40 | ||
| 912 | |a GBV_ILN_62 | ||
| 912 | |a GBV_ILN_2001 | ||
| 912 | |a GBV_ILN_2003 | ||
| 912 | |a GBV_ILN_2005 | ||
| 912 | |a GBV_ILN_2007 | ||
| 936 | b | k | |a 44.85 |j Kardiologie |j Angiologie |q VZ |
| 951 | |a AR | ||
| 952 | |d 332 |j 2014 |b 1 |c 0801 |h 19-21 |g 3 | ||
| 953 | |2 045F |a 530 | ||
| author_variant |
s c sc |
|---|---|
| matchkey_str |
corrasapitthanesoaresgvstedilefc:2014----:rcntenoprtoowtrni2isrcuefreboieeo |
| hierarchy_sort_str |
2014transfer abstract |
| bklnumber |
44.85 |
| publishDate |
2014 |
| allfields |
10.1016/j.nimb.2014.02.021 doi GBVA2014005000027.pica (DE-627)ELV027936104 (ELSEVIER)S0168-583X(14)00278-X DE-627 ger DE-627 rakwb eng 530 530 DE-600 610 VZ 610 VZ 44.85 bkl Corrêa, S.A. verfasserin aut Tracing the incorporation of water in SiO2/SiC structures formed by oxide deposition and thermal oxidation 2014transfer abstract 3 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Water vapor incorporation in SiO2 films, obtained by thermal oxidation and/or sputter deposition, on SiC and Si was investigated. Isotopically enriched water was used to allow the 2H (deuterium) quantification and the 18O profiling by nuclear reaction analyses. The incorporation of hydrogen from water vapor in SiO2/SiC and SiO2/Si structures, whose films were deposited by sputtering, occurred mainly in the SiO2 film/substrate interfacial region. Exposure to water vapor led to isotopic exchange between oxygen from the water vapor and oxygen from SiO2 films deposited on SiC and on Si substrates. Longer thermal oxidation times of the SiC prior to the deposition of the SiO2 film led to larger amounts of D incorporated. The thermal growth of a very thin SiO2 film followed by the deposition of SiO2 led to the lowest amounts of D incorporated. These results were correlated with the improvement in the electrical characteristics observed for SiO2/SiC structures obtained by these routes. Water vapor incorporation in SiO2 films, obtained by thermal oxidation and/or sputter deposition, on SiC and Si was investigated. Isotopically enriched water was used to allow the 2H (deuterium) quantification and the 18O profiling by nuclear reaction analyses. The incorporation of hydrogen from water vapor in SiO2/SiC and SiO2/Si structures, whose films were deposited by sputtering, occurred mainly in the SiO2 film/substrate interfacial region. Exposure to water vapor led to isotopic exchange between oxygen from the water vapor and oxygen from SiO2 films deposited on SiC and on Si substrates. Longer thermal oxidation times of the SiC prior to the deposition of the SiO2 film led to larger amounts of D incorporated. The thermal growth of a very thin SiO2 film followed by the deposition of SiO2 led to the lowest amounts of D incorporated. These results were correlated with the improvement in the electrical characteristics observed for SiO2/SiC structures obtained by these routes. Nuclear reaction analysis Elsevier Silicon carbide Elsevier SiO2 films Elsevier Silicon Elsevier Water vapor Elsevier Pitthan, E. oth Soares, G.V. oth Stedile, F.C. oth Enthalten in Elsevier Unwala, Darius J. ELSEVIER Editorial Comment 2013 a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics Amsterdam [u.a.] (DE-627)ELV011304669 volume:332 year:2014 day:1 month:08 pages:19-21 extent:3 https://doi.org/10.1016/j.nimb.2014.02.021 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_21 GBV_ILN_22 GBV_ILN_24 GBV_ILN_40 GBV_ILN_62 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2007 44.85 Kardiologie Angiologie VZ AR 332 2014 1 0801 19-21 3 045F 530 |
| spelling |
10.1016/j.nimb.2014.02.021 doi GBVA2014005000027.pica (DE-627)ELV027936104 (ELSEVIER)S0168-583X(14)00278-X DE-627 ger DE-627 rakwb eng 530 530 DE-600 610 VZ 610 VZ 44.85 bkl Corrêa, S.A. verfasserin aut Tracing the incorporation of water in SiO2/SiC structures formed by oxide deposition and thermal oxidation 2014transfer abstract 3 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Water vapor incorporation in SiO2 films, obtained by thermal oxidation and/or sputter deposition, on SiC and Si was investigated. Isotopically enriched water was used to allow the 2H (deuterium) quantification and the 18O profiling by nuclear reaction analyses. The incorporation of hydrogen from water vapor in SiO2/SiC and SiO2/Si structures, whose films were deposited by sputtering, occurred mainly in the SiO2 film/substrate interfacial region. Exposure to water vapor led to isotopic exchange between oxygen from the water vapor and oxygen from SiO2 films deposited on SiC and on Si substrates. Longer thermal oxidation times of the SiC prior to the deposition of the SiO2 film led to larger amounts of D incorporated. The thermal growth of a very thin SiO2 film followed by the deposition of SiO2 led to the lowest amounts of D incorporated. These results were correlated with the improvement in the electrical characteristics observed for SiO2/SiC structures obtained by these routes. Water vapor incorporation in SiO2 films, obtained by thermal oxidation and/or sputter deposition, on SiC and Si was investigated. Isotopically enriched water was used to allow the 2H (deuterium) quantification and the 18O profiling by nuclear reaction analyses. The incorporation of hydrogen from water vapor in SiO2/SiC and SiO2/Si structures, whose films were deposited by sputtering, occurred mainly in the SiO2 film/substrate interfacial region. Exposure to water vapor led to isotopic exchange between oxygen from the water vapor and oxygen from SiO2 films deposited on SiC and on Si substrates. Longer thermal oxidation times of the SiC prior to the deposition of the SiO2 film led to larger amounts of D incorporated. The thermal growth of a very thin SiO2 film followed by the deposition of SiO2 led to the lowest amounts of D incorporated. These results were correlated with the improvement in the electrical characteristics observed for SiO2/SiC structures obtained by these routes. Nuclear reaction analysis Elsevier Silicon carbide Elsevier SiO2 films Elsevier Silicon Elsevier Water vapor Elsevier Pitthan, E. oth Soares, G.V. oth Stedile, F.C. oth Enthalten in Elsevier Unwala, Darius J. ELSEVIER Editorial Comment 2013 a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics Amsterdam [u.a.] (DE-627)ELV011304669 volume:332 year:2014 day:1 month:08 pages:19-21 extent:3 https://doi.org/10.1016/j.nimb.2014.02.021 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_21 GBV_ILN_22 GBV_ILN_24 GBV_ILN_40 GBV_ILN_62 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2007 44.85 Kardiologie Angiologie VZ AR 332 2014 1 0801 19-21 3 045F 530 |
| allfields_unstemmed |
10.1016/j.nimb.2014.02.021 doi GBVA2014005000027.pica (DE-627)ELV027936104 (ELSEVIER)S0168-583X(14)00278-X DE-627 ger DE-627 rakwb eng 530 530 DE-600 610 VZ 610 VZ 44.85 bkl Corrêa, S.A. verfasserin aut Tracing the incorporation of water in SiO2/SiC structures formed by oxide deposition and thermal oxidation 2014transfer abstract 3 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Water vapor incorporation in SiO2 films, obtained by thermal oxidation and/or sputter deposition, on SiC and Si was investigated. Isotopically enriched water was used to allow the 2H (deuterium) quantification and the 18O profiling by nuclear reaction analyses. The incorporation of hydrogen from water vapor in SiO2/SiC and SiO2/Si structures, whose films were deposited by sputtering, occurred mainly in the SiO2 film/substrate interfacial region. Exposure to water vapor led to isotopic exchange between oxygen from the water vapor and oxygen from SiO2 films deposited on SiC and on Si substrates. Longer thermal oxidation times of the SiC prior to the deposition of the SiO2 film led to larger amounts of D incorporated. The thermal growth of a very thin SiO2 film followed by the deposition of SiO2 led to the lowest amounts of D incorporated. These results were correlated with the improvement in the electrical characteristics observed for SiO2/SiC structures obtained by these routes. Water vapor incorporation in SiO2 films, obtained by thermal oxidation and/or sputter deposition, on SiC and Si was investigated. Isotopically enriched water was used to allow the 2H (deuterium) quantification and the 18O profiling by nuclear reaction analyses. The incorporation of hydrogen from water vapor in SiO2/SiC and SiO2/Si structures, whose films were deposited by sputtering, occurred mainly in the SiO2 film/substrate interfacial region. Exposure to water vapor led to isotopic exchange between oxygen from the water vapor and oxygen from SiO2 films deposited on SiC and on Si substrates. Longer thermal oxidation times of the SiC prior to the deposition of the SiO2 film led to larger amounts of D incorporated. The thermal growth of a very thin SiO2 film followed by the deposition of SiO2 led to the lowest amounts of D incorporated. These results were correlated with the improvement in the electrical characteristics observed for SiO2/SiC structures obtained by these routes. Nuclear reaction analysis Elsevier Silicon carbide Elsevier SiO2 films Elsevier Silicon Elsevier Water vapor Elsevier Pitthan, E. oth Soares, G.V. oth Stedile, F.C. oth Enthalten in Elsevier Unwala, Darius J. ELSEVIER Editorial Comment 2013 a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics Amsterdam [u.a.] (DE-627)ELV011304669 volume:332 year:2014 day:1 month:08 pages:19-21 extent:3 https://doi.org/10.1016/j.nimb.2014.02.021 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_21 GBV_ILN_22 GBV_ILN_24 GBV_ILN_40 GBV_ILN_62 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2007 44.85 Kardiologie Angiologie VZ AR 332 2014 1 0801 19-21 3 045F 530 |
| allfieldsGer |
10.1016/j.nimb.2014.02.021 doi GBVA2014005000027.pica (DE-627)ELV027936104 (ELSEVIER)S0168-583X(14)00278-X DE-627 ger DE-627 rakwb eng 530 530 DE-600 610 VZ 610 VZ 44.85 bkl Corrêa, S.A. verfasserin aut Tracing the incorporation of water in SiO2/SiC structures formed by oxide deposition and thermal oxidation 2014transfer abstract 3 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Water vapor incorporation in SiO2 films, obtained by thermal oxidation and/or sputter deposition, on SiC and Si was investigated. Isotopically enriched water was used to allow the 2H (deuterium) quantification and the 18O profiling by nuclear reaction analyses. The incorporation of hydrogen from water vapor in SiO2/SiC and SiO2/Si structures, whose films were deposited by sputtering, occurred mainly in the SiO2 film/substrate interfacial region. Exposure to water vapor led to isotopic exchange between oxygen from the water vapor and oxygen from SiO2 films deposited on SiC and on Si substrates. Longer thermal oxidation times of the SiC prior to the deposition of the SiO2 film led to larger amounts of D incorporated. The thermal growth of a very thin SiO2 film followed by the deposition of SiO2 led to the lowest amounts of D incorporated. These results were correlated with the improvement in the electrical characteristics observed for SiO2/SiC structures obtained by these routes. Water vapor incorporation in SiO2 films, obtained by thermal oxidation and/or sputter deposition, on SiC and Si was investigated. Isotopically enriched water was used to allow the 2H (deuterium) quantification and the 18O profiling by nuclear reaction analyses. The incorporation of hydrogen from water vapor in SiO2/SiC and SiO2/Si structures, whose films were deposited by sputtering, occurred mainly in the SiO2 film/substrate interfacial region. Exposure to water vapor led to isotopic exchange between oxygen from the water vapor and oxygen from SiO2 films deposited on SiC and on Si substrates. Longer thermal oxidation times of the SiC prior to the deposition of the SiO2 film led to larger amounts of D incorporated. The thermal growth of a very thin SiO2 film followed by the deposition of SiO2 led to the lowest amounts of D incorporated. These results were correlated with the improvement in the electrical characteristics observed for SiO2/SiC structures obtained by these routes. Nuclear reaction analysis Elsevier Silicon carbide Elsevier SiO2 films Elsevier Silicon Elsevier Water vapor Elsevier Pitthan, E. oth Soares, G.V. oth Stedile, F.C. oth Enthalten in Elsevier Unwala, Darius J. ELSEVIER Editorial Comment 2013 a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics Amsterdam [u.a.] (DE-627)ELV011304669 volume:332 year:2014 day:1 month:08 pages:19-21 extent:3 https://doi.org/10.1016/j.nimb.2014.02.021 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_21 GBV_ILN_22 GBV_ILN_24 GBV_ILN_40 GBV_ILN_62 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2007 44.85 Kardiologie Angiologie VZ AR 332 2014 1 0801 19-21 3 045F 530 |
| allfieldsSound |
10.1016/j.nimb.2014.02.021 doi GBVA2014005000027.pica (DE-627)ELV027936104 (ELSEVIER)S0168-583X(14)00278-X DE-627 ger DE-627 rakwb eng 530 530 DE-600 610 VZ 610 VZ 44.85 bkl Corrêa, S.A. verfasserin aut Tracing the incorporation of water in SiO2/SiC structures formed by oxide deposition and thermal oxidation 2014transfer abstract 3 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Water vapor incorporation in SiO2 films, obtained by thermal oxidation and/or sputter deposition, on SiC and Si was investigated. Isotopically enriched water was used to allow the 2H (deuterium) quantification and the 18O profiling by nuclear reaction analyses. The incorporation of hydrogen from water vapor in SiO2/SiC and SiO2/Si structures, whose films were deposited by sputtering, occurred mainly in the SiO2 film/substrate interfacial region. Exposure to water vapor led to isotopic exchange between oxygen from the water vapor and oxygen from SiO2 films deposited on SiC and on Si substrates. Longer thermal oxidation times of the SiC prior to the deposition of the SiO2 film led to larger amounts of D incorporated. The thermal growth of a very thin SiO2 film followed by the deposition of SiO2 led to the lowest amounts of D incorporated. These results were correlated with the improvement in the electrical characteristics observed for SiO2/SiC structures obtained by these routes. Water vapor incorporation in SiO2 films, obtained by thermal oxidation and/or sputter deposition, on SiC and Si was investigated. Isotopically enriched water was used to allow the 2H (deuterium) quantification and the 18O profiling by nuclear reaction analyses. The incorporation of hydrogen from water vapor in SiO2/SiC and SiO2/Si structures, whose films were deposited by sputtering, occurred mainly in the SiO2 film/substrate interfacial region. Exposure to water vapor led to isotopic exchange between oxygen from the water vapor and oxygen from SiO2 films deposited on SiC and on Si substrates. Longer thermal oxidation times of the SiC prior to the deposition of the SiO2 film led to larger amounts of D incorporated. The thermal growth of a very thin SiO2 film followed by the deposition of SiO2 led to the lowest amounts of D incorporated. These results were correlated with the improvement in the electrical characteristics observed for SiO2/SiC structures obtained by these routes. Nuclear reaction analysis Elsevier Silicon carbide Elsevier SiO2 films Elsevier Silicon Elsevier Water vapor Elsevier Pitthan, E. oth Soares, G.V. oth Stedile, F.C. oth Enthalten in Elsevier Unwala, Darius J. ELSEVIER Editorial Comment 2013 a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics Amsterdam [u.a.] (DE-627)ELV011304669 volume:332 year:2014 day:1 month:08 pages:19-21 extent:3 https://doi.org/10.1016/j.nimb.2014.02.021 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_21 GBV_ILN_22 GBV_ILN_24 GBV_ILN_40 GBV_ILN_62 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2007 44.85 Kardiologie Angiologie VZ AR 332 2014 1 0801 19-21 3 045F 530 |
| language |
English |
| source |
Enthalten in Editorial Comment Amsterdam [u.a.] volume:332 year:2014 day:1 month:08 pages:19-21 extent:3 |
| sourceStr |
Enthalten in Editorial Comment Amsterdam [u.a.] volume:332 year:2014 day:1 month:08 pages:19-21 extent:3 |
| format_phy_str_mv |
Article |
| bklname |
Kardiologie Angiologie |
| institution |
findex.gbv.de |
| topic_facet |
Nuclear reaction analysis Silicon carbide SiO2 films Silicon Water vapor |
| dewey-raw |
530 |
| isfreeaccess_bool |
false |
| container_title |
Editorial Comment |
| authorswithroles_txt_mv |
Corrêa, S.A. @@aut@@ Pitthan, E. @@oth@@ Soares, G.V. @@oth@@ Stedile, F.C. @@oth@@ |
| publishDateDaySort_date |
2014-01-01T00:00:00Z |
| hierarchy_top_id |
ELV011304669 |
| dewey-sort |
3530 |
| id |
ELV027936104 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV027936104</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230625152659.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">180603s2014 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.nimb.2014.02.021</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">GBVA2014005000027.pica</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV027936104</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S0168-583X(14)00278-X</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">530</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="q">DE-600</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">610</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">610</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">44.85</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Corrêa, S.A.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Tracing the incorporation of water in SiO2/SiC structures formed by oxide deposition and thermal oxidation</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2014transfer abstract</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">3</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Water vapor incorporation in SiO2 films, obtained by thermal oxidation and/or sputter deposition, on SiC and Si was investigated. Isotopically enriched water was used to allow the 2H (deuterium) quantification and the 18O profiling by nuclear reaction analyses. The incorporation of hydrogen from water vapor in SiO2/SiC and SiO2/Si structures, whose films were deposited by sputtering, occurred mainly in the SiO2 film/substrate interfacial region. Exposure to water vapor led to isotopic exchange between oxygen from the water vapor and oxygen from SiO2 films deposited on SiC and on Si substrates. Longer thermal oxidation times of the SiC prior to the deposition of the SiO2 film led to larger amounts of D incorporated. The thermal growth of a very thin SiO2 film followed by the deposition of SiO2 led to the lowest amounts of D incorporated. These results were correlated with the improvement in the electrical characteristics observed for SiO2/SiC structures obtained by these routes.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Water vapor incorporation in SiO2 films, obtained by thermal oxidation and/or sputter deposition, on SiC and Si was investigated. Isotopically enriched water was used to allow the 2H (deuterium) quantification and the 18O profiling by nuclear reaction analyses. The incorporation of hydrogen from water vapor in SiO2/SiC and SiO2/Si structures, whose films were deposited by sputtering, occurred mainly in the SiO2 film/substrate interfacial region. Exposure to water vapor led to isotopic exchange between oxygen from the water vapor and oxygen from SiO2 films deposited on SiC and on Si substrates. Longer thermal oxidation times of the SiC prior to the deposition of the SiO2 film led to larger amounts of D incorporated. The thermal growth of a very thin SiO2 film followed by the deposition of SiO2 led to the lowest amounts of D incorporated. These results were correlated with the improvement in the electrical characteristics observed for SiO2/SiC structures obtained by these routes.</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Nuclear reaction analysis</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Silicon carbide</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">SiO2 films</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Silicon</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Water vapor</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Pitthan, E.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Soares, G.V.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Stedile, F.C.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="n">Elsevier</subfield><subfield code="a">Unwala, Darius J. ELSEVIER</subfield><subfield code="t">Editorial Comment</subfield><subfield code="d">2013</subfield><subfield code="d">a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics</subfield><subfield code="g">Amsterdam [u.a.]</subfield><subfield code="w">(DE-627)ELV011304669</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:332</subfield><subfield code="g">year:2014</subfield><subfield code="g">day:1</subfield><subfield code="g">month:08</subfield><subfield code="g">pages:19-21</subfield><subfield code="g">extent:3</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1016/j.nimb.2014.02.021</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHA</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_21</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2001</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2003</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2007</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">44.85</subfield><subfield code="j">Kardiologie</subfield><subfield code="j">Angiologie</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">332</subfield><subfield code="j">2014</subfield><subfield code="b">1</subfield><subfield code="c">0801</subfield><subfield code="h">19-21</subfield><subfield code="g">3</subfield></datafield><datafield tag="953" ind1=" " ind2=" "><subfield code="2">045F</subfield><subfield code="a">530</subfield></datafield></record></collection>
|
| author |
Corrêa, S.A. |
| spellingShingle |
Corrêa, S.A. ddc 530 ddc 610 bkl 44.85 Elsevier Nuclear reaction analysis Elsevier Silicon carbide Elsevier SiO2 films Elsevier Silicon Elsevier Water vapor Tracing the incorporation of water in SiO2/SiC structures formed by oxide deposition and thermal oxidation |
| authorStr |
Corrêa, S.A. |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)ELV011304669 |
| format |
electronic Article |
| dewey-ones |
530 - Physics 610 - Medicine & health |
| delete_txt_mv |
keep |
| author_role |
aut |
| collection |
elsevier |
| remote_str |
true |
| illustrated |
Not Illustrated |
| topic_title |
530 530 DE-600 610 VZ 44.85 bkl Tracing the incorporation of water in SiO2/SiC structures formed by oxide deposition and thermal oxidation Nuclear reaction analysis Elsevier Silicon carbide Elsevier SiO2 films Elsevier Silicon Elsevier Water vapor Elsevier |
| topic |
ddc 530 ddc 610 bkl 44.85 Elsevier Nuclear reaction analysis Elsevier Silicon carbide Elsevier SiO2 films Elsevier Silicon Elsevier Water vapor |
| topic_unstemmed |
ddc 530 ddc 610 bkl 44.85 Elsevier Nuclear reaction analysis Elsevier Silicon carbide Elsevier SiO2 films Elsevier Silicon Elsevier Water vapor |
| topic_browse |
ddc 530 ddc 610 bkl 44.85 Elsevier Nuclear reaction analysis Elsevier Silicon carbide Elsevier SiO2 films Elsevier Silicon Elsevier Water vapor |
| format_facet |
Elektronische Aufsätze Aufsätze Elektronische Ressource |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
zu |
| author2_variant |
e p ep g s gs f s fs |
| hierarchy_parent_title |
Editorial Comment |
| hierarchy_parent_id |
ELV011304669 |
| dewey-tens |
530 - Physics 610 - Medicine & health |
| hierarchy_top_title |
Editorial Comment |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)ELV011304669 |
| title |
Tracing the incorporation of water in SiO2/SiC structures formed by oxide deposition and thermal oxidation |
| ctrlnum |
(DE-627)ELV027936104 (ELSEVIER)S0168-583X(14)00278-X |
| title_full |
Tracing the incorporation of water in SiO2/SiC structures formed by oxide deposition and thermal oxidation |
| author_sort |
Corrêa, S.A. |
| journal |
Editorial Comment |
| journalStr |
Editorial Comment |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
500 - Science 600 - Technology |
| recordtype |
marc |
| publishDateSort |
2014 |
| contenttype_str_mv |
zzz |
| container_start_page |
19 |
| author_browse |
Corrêa, S.A. |
| container_volume |
332 |
| physical |
3 |
| class |
530 530 DE-600 610 VZ 44.85 bkl |
| format_se |
Elektronische Aufsätze |
| author-letter |
Corrêa, S.A. |
| doi_str_mv |
10.1016/j.nimb.2014.02.021 |
| dewey-full |
530 610 |
| title_sort |
tracing the incorporation of water in sio2/sic structures formed by oxide deposition and thermal oxidation |
| title_auth |
Tracing the incorporation of water in SiO2/SiC structures formed by oxide deposition and thermal oxidation |
| abstract |
Water vapor incorporation in SiO2 films, obtained by thermal oxidation and/or sputter deposition, on SiC and Si was investigated. Isotopically enriched water was used to allow the 2H (deuterium) quantification and the 18O profiling by nuclear reaction analyses. The incorporation of hydrogen from water vapor in SiO2/SiC and SiO2/Si structures, whose films were deposited by sputtering, occurred mainly in the SiO2 film/substrate interfacial region. Exposure to water vapor led to isotopic exchange between oxygen from the water vapor and oxygen from SiO2 films deposited on SiC and on Si substrates. Longer thermal oxidation times of the SiC prior to the deposition of the SiO2 film led to larger amounts of D incorporated. The thermal growth of a very thin SiO2 film followed by the deposition of SiO2 led to the lowest amounts of D incorporated. These results were correlated with the improvement in the electrical characteristics observed for SiO2/SiC structures obtained by these routes. |
| abstractGer |
Water vapor incorporation in SiO2 films, obtained by thermal oxidation and/or sputter deposition, on SiC and Si was investigated. Isotopically enriched water was used to allow the 2H (deuterium) quantification and the 18O profiling by nuclear reaction analyses. The incorporation of hydrogen from water vapor in SiO2/SiC and SiO2/Si structures, whose films were deposited by sputtering, occurred mainly in the SiO2 film/substrate interfacial region. Exposure to water vapor led to isotopic exchange between oxygen from the water vapor and oxygen from SiO2 films deposited on SiC and on Si substrates. Longer thermal oxidation times of the SiC prior to the deposition of the SiO2 film led to larger amounts of D incorporated. The thermal growth of a very thin SiO2 film followed by the deposition of SiO2 led to the lowest amounts of D incorporated. These results were correlated with the improvement in the electrical characteristics observed for SiO2/SiC structures obtained by these routes. |
| abstract_unstemmed |
Water vapor incorporation in SiO2 films, obtained by thermal oxidation and/or sputter deposition, on SiC and Si was investigated. Isotopically enriched water was used to allow the 2H (deuterium) quantification and the 18O profiling by nuclear reaction analyses. The incorporation of hydrogen from water vapor in SiO2/SiC and SiO2/Si structures, whose films were deposited by sputtering, occurred mainly in the SiO2 film/substrate interfacial region. Exposure to water vapor led to isotopic exchange between oxygen from the water vapor and oxygen from SiO2 films deposited on SiC and on Si substrates. Longer thermal oxidation times of the SiC prior to the deposition of the SiO2 film led to larger amounts of D incorporated. The thermal growth of a very thin SiO2 film followed by the deposition of SiO2 led to the lowest amounts of D incorporated. These results were correlated with the improvement in the electrical characteristics observed for SiO2/SiC structures obtained by these routes. |
| collection_details |
GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_21 GBV_ILN_22 GBV_ILN_24 GBV_ILN_40 GBV_ILN_62 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2007 |
| title_short |
Tracing the incorporation of water in SiO2/SiC structures formed by oxide deposition and thermal oxidation |
| url |
https://doi.org/10.1016/j.nimb.2014.02.021 |
| remote_bool |
true |
| author2 |
Pitthan, E. Soares, G.V. Stedile, F.C. |
| author2Str |
Pitthan, E. Soares, G.V. Stedile, F.C. |
| ppnlink |
ELV011304669 |
| mediatype_str_mv |
z |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| author2_role |
oth oth oth |
| doi_str |
10.1016/j.nimb.2014.02.021 |
| up_date |
2024-07-06T17:30:41.337Z |
| _version_ |
1803851704660131840 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV027936104</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230625152659.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">180603s2014 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.nimb.2014.02.021</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">GBVA2014005000027.pica</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV027936104</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S0168-583X(14)00278-X</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">530</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="q">DE-600</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">610</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">610</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">44.85</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Corrêa, S.A.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Tracing the incorporation of water in SiO2/SiC structures formed by oxide deposition and thermal oxidation</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2014transfer abstract</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">3</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Water vapor incorporation in SiO2 films, obtained by thermal oxidation and/or sputter deposition, on SiC and Si was investigated. Isotopically enriched water was used to allow the 2H (deuterium) quantification and the 18O profiling by nuclear reaction analyses. The incorporation of hydrogen from water vapor in SiO2/SiC and SiO2/Si structures, whose films were deposited by sputtering, occurred mainly in the SiO2 film/substrate interfacial region. Exposure to water vapor led to isotopic exchange between oxygen from the water vapor and oxygen from SiO2 films deposited on SiC and on Si substrates. Longer thermal oxidation times of the SiC prior to the deposition of the SiO2 film led to larger amounts of D incorporated. The thermal growth of a very thin SiO2 film followed by the deposition of SiO2 led to the lowest amounts of D incorporated. These results were correlated with the improvement in the electrical characteristics observed for SiO2/SiC structures obtained by these routes.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Water vapor incorporation in SiO2 films, obtained by thermal oxidation and/or sputter deposition, on SiC and Si was investigated. Isotopically enriched water was used to allow the 2H (deuterium) quantification and the 18O profiling by nuclear reaction analyses. The incorporation of hydrogen from water vapor in SiO2/SiC and SiO2/Si structures, whose films were deposited by sputtering, occurred mainly in the SiO2 film/substrate interfacial region. Exposure to water vapor led to isotopic exchange between oxygen from the water vapor and oxygen from SiO2 films deposited on SiC and on Si substrates. Longer thermal oxidation times of the SiC prior to the deposition of the SiO2 film led to larger amounts of D incorporated. The thermal growth of a very thin SiO2 film followed by the deposition of SiO2 led to the lowest amounts of D incorporated. These results were correlated with the improvement in the electrical characteristics observed for SiO2/SiC structures obtained by these routes.</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Nuclear reaction analysis</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Silicon carbide</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">SiO2 films</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Silicon</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Water vapor</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Pitthan, E.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Soares, G.V.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Stedile, F.C.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="n">Elsevier</subfield><subfield code="a">Unwala, Darius J. ELSEVIER</subfield><subfield code="t">Editorial Comment</subfield><subfield code="d">2013</subfield><subfield code="d">a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics</subfield><subfield code="g">Amsterdam [u.a.]</subfield><subfield code="w">(DE-627)ELV011304669</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:332</subfield><subfield code="g">year:2014</subfield><subfield code="g">day:1</subfield><subfield code="g">month:08</subfield><subfield code="g">pages:19-21</subfield><subfield code="g">extent:3</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1016/j.nimb.2014.02.021</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHA</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_21</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2001</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2003</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2007</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">44.85</subfield><subfield code="j">Kardiologie</subfield><subfield code="j">Angiologie</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">332</subfield><subfield code="j">2014</subfield><subfield code="b">1</subfield><subfield code="c">0801</subfield><subfield code="h">19-21</subfield><subfield code="g">3</subfield></datafield><datafield tag="953" ind1=" " ind2=" "><subfield code="2">045F</subfield><subfield code="a">530</subfield></datafield></record></collection>
|
| score |
7.39822 |