Hopping conduction in zirconium oxynitrides thin film deposited by reactive magnetron sputtering
Zirconium oxynitrides thin film thermometers were demonstrated to be useful temperature sensors. However, the basic conduction mechanism of zirconium oxynitrides films has been a long-standing issue, which hinders the prediction and optimization of their ultimate performance. In this letter, zirconi...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Guo, Jie [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2015transfer abstract |
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| Schlagwörter: |
Zirconium oxynitrides thin film |
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| Umfang: |
4 |
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| Übergeordnetes Werk: |
Enthalten in: Towards circular plastics: Density and MFR prediction of PE with IR spectroscopic techniques - Bredács, M. ELSEVIER, 2023, Amsterdam |
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| Übergeordnetes Werk: |
volume:475 ; year:2015 ; day:15 ; month:10 ; pages:86-89 ; extent:4 |
| Links: |
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| DOI / URN: |
10.1016/j.physb.2015.06.026 |
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ELV029109485 |
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| 520 | |a Zirconium oxynitrides thin film thermometers were demonstrated to be useful temperature sensors. However, the basic conduction mechanism of zirconium oxynitrides films has been a long-standing issue, which hinders the prediction and optimization of their ultimate performance. In this letter, zirconium oxynitrides films were grown on sapphire substrates by magnetron sputtering and their electric transport mechanism has been systemically investigated. It was found that in high temperatures region (>150K) the electrical conductivity was dominated by thermal activation for all samples. In the low temperatures range, while Mott variable hopping conduction (VRH) was dominated the transport for films with relatively low resistance, a crossover from Mott VRH conduction to Efros–Shklovskii (ES) VRH was observed for films with relatively high resistance. This low temperature crossover from Mott to ES VRH indicates the presence of a Coulomb gap (~7meV). These results demonstrate the competing and tunable conduction mechanism in zirconium oxynitrides thin films, which would be helpful for optimizing the performance of zirconium oxynitrides thermometer. | ||
| 520 | |a Zirconium oxynitrides thin film thermometers were demonstrated to be useful temperature sensors. However, the basic conduction mechanism of zirconium oxynitrides films has been a long-standing issue, which hinders the prediction and optimization of their ultimate performance. In this letter, zirconium oxynitrides films were grown on sapphire substrates by magnetron sputtering and their electric transport mechanism has been systemically investigated. It was found that in high temperatures region (>150K) the electrical conductivity was dominated by thermal activation for all samples. In the low temperatures range, while Mott variable hopping conduction (VRH) was dominated the transport for films with relatively low resistance, a crossover from Mott VRH conduction to Efros–Shklovskii (ES) VRH was observed for films with relatively high resistance. This low temperature crossover from Mott to ES VRH indicates the presence of a Coulomb gap (~7meV). These results demonstrate the competing and tunable conduction mechanism in zirconium oxynitrides thin films, which would be helpful for optimizing the performance of zirconium oxynitrides thermometer. | ||
| 650 | 7 | |a Zirconium oxynitrides thin film |2 Elsevier | |
| 650 | 7 | |a Efros–Shklovskii variable hopping conduction |2 Elsevier | |
| 650 | 7 | |a Mott variable hopping conduction |2 Elsevier | |
| 700 | 1 | |a Zhan, Guanghui |4 oth | |
| 700 | 1 | |a Liu, Jingquan |4 oth | |
| 700 | 1 | |a Yang, Bin |4 oth | |
| 700 | 1 | |a Xu, Bin |4 oth | |
| 700 | 1 | |a Feng, Jie |4 oth | |
| 700 | 1 | |a Chen, Xiang |4 oth | |
| 700 | 1 | |a Yang, Chunsheng |4 oth | |
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10.1016/j.physb.2015.06.026 doi GBVA2015015000022.pica (DE-627)ELV029109485 (ELSEVIER)S0921-4526(15)30115-0 DE-627 ger DE-627 rakwb eng 530 530 DE-600 540 VZ 51.30 bkl Guo, Jie verfasserin aut Hopping conduction in zirconium oxynitrides thin film deposited by reactive magnetron sputtering 2015transfer abstract 4 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Zirconium oxynitrides thin film thermometers were demonstrated to be useful temperature sensors. However, the basic conduction mechanism of zirconium oxynitrides films has been a long-standing issue, which hinders the prediction and optimization of their ultimate performance. In this letter, zirconium oxynitrides films were grown on sapphire substrates by magnetron sputtering and their electric transport mechanism has been systemically investigated. It was found that in high temperatures region (>150K) the electrical conductivity was dominated by thermal activation for all samples. In the low temperatures range, while Mott variable hopping conduction (VRH) was dominated the transport for films with relatively low resistance, a crossover from Mott VRH conduction to Efros–Shklovskii (ES) VRH was observed for films with relatively high resistance. This low temperature crossover from Mott to ES VRH indicates the presence of a Coulomb gap (~7meV). These results demonstrate the competing and tunable conduction mechanism in zirconium oxynitrides thin films, which would be helpful for optimizing the performance of zirconium oxynitrides thermometer. Zirconium oxynitrides thin film thermometers were demonstrated to be useful temperature sensors. However, the basic conduction mechanism of zirconium oxynitrides films has been a long-standing issue, which hinders the prediction and optimization of their ultimate performance. In this letter, zirconium oxynitrides films were grown on sapphire substrates by magnetron sputtering and their electric transport mechanism has been systemically investigated. It was found that in high temperatures region (>150K) the electrical conductivity was dominated by thermal activation for all samples. In the low temperatures range, while Mott variable hopping conduction (VRH) was dominated the transport for films with relatively low resistance, a crossover from Mott VRH conduction to Efros–Shklovskii (ES) VRH was observed for films with relatively high resistance. This low temperature crossover from Mott to ES VRH indicates the presence of a Coulomb gap (~7meV). These results demonstrate the competing and tunable conduction mechanism in zirconium oxynitrides thin films, which would be helpful for optimizing the performance of zirconium oxynitrides thermometer. Zirconium oxynitrides thin film Elsevier Efros–Shklovskii variable hopping conduction Elsevier Mott variable hopping conduction Elsevier Zhan, Guanghui oth Liu, Jingquan oth Yang, Bin oth Xu, Bin oth Feng, Jie oth Chen, Xiang oth Yang, Chunsheng oth Enthalten in Elsevier Bredács, M. ELSEVIER Towards circular plastics: Density and MFR prediction of PE with IR spectroscopic techniques 2023 Amsterdam (DE-627)ELV010517057 volume:475 year:2015 day:15 month:10 pages:86-89 extent:4 https://doi.org/10.1016/j.physb.2015.06.026 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_203 GBV_ILN_227 GBV_ILN_2010 51.30 Werkstoffprüfung Werkstoffuntersuchung VZ AR 475 2015 15 1015 86-89 4 045F 530 |
| spelling |
10.1016/j.physb.2015.06.026 doi GBVA2015015000022.pica (DE-627)ELV029109485 (ELSEVIER)S0921-4526(15)30115-0 DE-627 ger DE-627 rakwb eng 530 530 DE-600 540 VZ 51.30 bkl Guo, Jie verfasserin aut Hopping conduction in zirconium oxynitrides thin film deposited by reactive magnetron sputtering 2015transfer abstract 4 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Zirconium oxynitrides thin film thermometers were demonstrated to be useful temperature sensors. However, the basic conduction mechanism of zirconium oxynitrides films has been a long-standing issue, which hinders the prediction and optimization of their ultimate performance. In this letter, zirconium oxynitrides films were grown on sapphire substrates by magnetron sputtering and their electric transport mechanism has been systemically investigated. It was found that in high temperatures region (>150K) the electrical conductivity was dominated by thermal activation for all samples. In the low temperatures range, while Mott variable hopping conduction (VRH) was dominated the transport for films with relatively low resistance, a crossover from Mott VRH conduction to Efros–Shklovskii (ES) VRH was observed for films with relatively high resistance. This low temperature crossover from Mott to ES VRH indicates the presence of a Coulomb gap (~7meV). These results demonstrate the competing and tunable conduction mechanism in zirconium oxynitrides thin films, which would be helpful for optimizing the performance of zirconium oxynitrides thermometer. Zirconium oxynitrides thin film thermometers were demonstrated to be useful temperature sensors. However, the basic conduction mechanism of zirconium oxynitrides films has been a long-standing issue, which hinders the prediction and optimization of their ultimate performance. In this letter, zirconium oxynitrides films were grown on sapphire substrates by magnetron sputtering and their electric transport mechanism has been systemically investigated. It was found that in high temperatures region (>150K) the electrical conductivity was dominated by thermal activation for all samples. In the low temperatures range, while Mott variable hopping conduction (VRH) was dominated the transport for films with relatively low resistance, a crossover from Mott VRH conduction to Efros–Shklovskii (ES) VRH was observed for films with relatively high resistance. This low temperature crossover from Mott to ES VRH indicates the presence of a Coulomb gap (~7meV). These results demonstrate the competing and tunable conduction mechanism in zirconium oxynitrides thin films, which would be helpful for optimizing the performance of zirconium oxynitrides thermometer. Zirconium oxynitrides thin film Elsevier Efros–Shklovskii variable hopping conduction Elsevier Mott variable hopping conduction Elsevier Zhan, Guanghui oth Liu, Jingquan oth Yang, Bin oth Xu, Bin oth Feng, Jie oth Chen, Xiang oth Yang, Chunsheng oth Enthalten in Elsevier Bredács, M. ELSEVIER Towards circular plastics: Density and MFR prediction of PE with IR spectroscopic techniques 2023 Amsterdam (DE-627)ELV010517057 volume:475 year:2015 day:15 month:10 pages:86-89 extent:4 https://doi.org/10.1016/j.physb.2015.06.026 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_203 GBV_ILN_227 GBV_ILN_2010 51.30 Werkstoffprüfung Werkstoffuntersuchung VZ AR 475 2015 15 1015 86-89 4 045F 530 |
| allfields_unstemmed |
10.1016/j.physb.2015.06.026 doi GBVA2015015000022.pica (DE-627)ELV029109485 (ELSEVIER)S0921-4526(15)30115-0 DE-627 ger DE-627 rakwb eng 530 530 DE-600 540 VZ 51.30 bkl Guo, Jie verfasserin aut Hopping conduction in zirconium oxynitrides thin film deposited by reactive magnetron sputtering 2015transfer abstract 4 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Zirconium oxynitrides thin film thermometers were demonstrated to be useful temperature sensors. However, the basic conduction mechanism of zirconium oxynitrides films has been a long-standing issue, which hinders the prediction and optimization of their ultimate performance. In this letter, zirconium oxynitrides films were grown on sapphire substrates by magnetron sputtering and their electric transport mechanism has been systemically investigated. It was found that in high temperatures region (>150K) the electrical conductivity was dominated by thermal activation for all samples. In the low temperatures range, while Mott variable hopping conduction (VRH) was dominated the transport for films with relatively low resistance, a crossover from Mott VRH conduction to Efros–Shklovskii (ES) VRH was observed for films with relatively high resistance. This low temperature crossover from Mott to ES VRH indicates the presence of a Coulomb gap (~7meV). These results demonstrate the competing and tunable conduction mechanism in zirconium oxynitrides thin films, which would be helpful for optimizing the performance of zirconium oxynitrides thermometer. Zirconium oxynitrides thin film thermometers were demonstrated to be useful temperature sensors. However, the basic conduction mechanism of zirconium oxynitrides films has been a long-standing issue, which hinders the prediction and optimization of their ultimate performance. In this letter, zirconium oxynitrides films were grown on sapphire substrates by magnetron sputtering and their electric transport mechanism has been systemically investigated. It was found that in high temperatures region (>150K) the electrical conductivity was dominated by thermal activation for all samples. In the low temperatures range, while Mott variable hopping conduction (VRH) was dominated the transport for films with relatively low resistance, a crossover from Mott VRH conduction to Efros–Shklovskii (ES) VRH was observed for films with relatively high resistance. This low temperature crossover from Mott to ES VRH indicates the presence of a Coulomb gap (~7meV). These results demonstrate the competing and tunable conduction mechanism in zirconium oxynitrides thin films, which would be helpful for optimizing the performance of zirconium oxynitrides thermometer. Zirconium oxynitrides thin film Elsevier Efros–Shklovskii variable hopping conduction Elsevier Mott variable hopping conduction Elsevier Zhan, Guanghui oth Liu, Jingquan oth Yang, Bin oth Xu, Bin oth Feng, Jie oth Chen, Xiang oth Yang, Chunsheng oth Enthalten in Elsevier Bredács, M. ELSEVIER Towards circular plastics: Density and MFR prediction of PE with IR spectroscopic techniques 2023 Amsterdam (DE-627)ELV010517057 volume:475 year:2015 day:15 month:10 pages:86-89 extent:4 https://doi.org/10.1016/j.physb.2015.06.026 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_203 GBV_ILN_227 GBV_ILN_2010 51.30 Werkstoffprüfung Werkstoffuntersuchung VZ AR 475 2015 15 1015 86-89 4 045F 530 |
| allfieldsGer |
10.1016/j.physb.2015.06.026 doi GBVA2015015000022.pica (DE-627)ELV029109485 (ELSEVIER)S0921-4526(15)30115-0 DE-627 ger DE-627 rakwb eng 530 530 DE-600 540 VZ 51.30 bkl Guo, Jie verfasserin aut Hopping conduction in zirconium oxynitrides thin film deposited by reactive magnetron sputtering 2015transfer abstract 4 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Zirconium oxynitrides thin film thermometers were demonstrated to be useful temperature sensors. However, the basic conduction mechanism of zirconium oxynitrides films has been a long-standing issue, which hinders the prediction and optimization of their ultimate performance. In this letter, zirconium oxynitrides films were grown on sapphire substrates by magnetron sputtering and their electric transport mechanism has been systemically investigated. It was found that in high temperatures region (>150K) the electrical conductivity was dominated by thermal activation for all samples. In the low temperatures range, while Mott variable hopping conduction (VRH) was dominated the transport for films with relatively low resistance, a crossover from Mott VRH conduction to Efros–Shklovskii (ES) VRH was observed for films with relatively high resistance. This low temperature crossover from Mott to ES VRH indicates the presence of a Coulomb gap (~7meV). These results demonstrate the competing and tunable conduction mechanism in zirconium oxynitrides thin films, which would be helpful for optimizing the performance of zirconium oxynitrides thermometer. Zirconium oxynitrides thin film thermometers were demonstrated to be useful temperature sensors. However, the basic conduction mechanism of zirconium oxynitrides films has been a long-standing issue, which hinders the prediction and optimization of their ultimate performance. In this letter, zirconium oxynitrides films were grown on sapphire substrates by magnetron sputtering and their electric transport mechanism has been systemically investigated. It was found that in high temperatures region (>150K) the electrical conductivity was dominated by thermal activation for all samples. In the low temperatures range, while Mott variable hopping conduction (VRH) was dominated the transport for films with relatively low resistance, a crossover from Mott VRH conduction to Efros–Shklovskii (ES) VRH was observed for films with relatively high resistance. This low temperature crossover from Mott to ES VRH indicates the presence of a Coulomb gap (~7meV). These results demonstrate the competing and tunable conduction mechanism in zirconium oxynitrides thin films, which would be helpful for optimizing the performance of zirconium oxynitrides thermometer. Zirconium oxynitrides thin film Elsevier Efros–Shklovskii variable hopping conduction Elsevier Mott variable hopping conduction Elsevier Zhan, Guanghui oth Liu, Jingquan oth Yang, Bin oth Xu, Bin oth Feng, Jie oth Chen, Xiang oth Yang, Chunsheng oth Enthalten in Elsevier Bredács, M. ELSEVIER Towards circular plastics: Density and MFR prediction of PE with IR spectroscopic techniques 2023 Amsterdam (DE-627)ELV010517057 volume:475 year:2015 day:15 month:10 pages:86-89 extent:4 https://doi.org/10.1016/j.physb.2015.06.026 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_203 GBV_ILN_227 GBV_ILN_2010 51.30 Werkstoffprüfung Werkstoffuntersuchung VZ AR 475 2015 15 1015 86-89 4 045F 530 |
| allfieldsSound |
10.1016/j.physb.2015.06.026 doi GBVA2015015000022.pica (DE-627)ELV029109485 (ELSEVIER)S0921-4526(15)30115-0 DE-627 ger DE-627 rakwb eng 530 530 DE-600 540 VZ 51.30 bkl Guo, Jie verfasserin aut Hopping conduction in zirconium oxynitrides thin film deposited by reactive magnetron sputtering 2015transfer abstract 4 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Zirconium oxynitrides thin film thermometers were demonstrated to be useful temperature sensors. However, the basic conduction mechanism of zirconium oxynitrides films has been a long-standing issue, which hinders the prediction and optimization of their ultimate performance. In this letter, zirconium oxynitrides films were grown on sapphire substrates by magnetron sputtering and their electric transport mechanism has been systemically investigated. It was found that in high temperatures region (>150K) the electrical conductivity was dominated by thermal activation for all samples. In the low temperatures range, while Mott variable hopping conduction (VRH) was dominated the transport for films with relatively low resistance, a crossover from Mott VRH conduction to Efros–Shklovskii (ES) VRH was observed for films with relatively high resistance. This low temperature crossover from Mott to ES VRH indicates the presence of a Coulomb gap (~7meV). These results demonstrate the competing and tunable conduction mechanism in zirconium oxynitrides thin films, which would be helpful for optimizing the performance of zirconium oxynitrides thermometer. Zirconium oxynitrides thin film thermometers were demonstrated to be useful temperature sensors. However, the basic conduction mechanism of zirconium oxynitrides films has been a long-standing issue, which hinders the prediction and optimization of their ultimate performance. In this letter, zirconium oxynitrides films were grown on sapphire substrates by magnetron sputtering and their electric transport mechanism has been systemically investigated. It was found that in high temperatures region (>150K) the electrical conductivity was dominated by thermal activation for all samples. In the low temperatures range, while Mott variable hopping conduction (VRH) was dominated the transport for films with relatively low resistance, a crossover from Mott VRH conduction to Efros–Shklovskii (ES) VRH was observed for films with relatively high resistance. This low temperature crossover from Mott to ES VRH indicates the presence of a Coulomb gap (~7meV). These results demonstrate the competing and tunable conduction mechanism in zirconium oxynitrides thin films, which would be helpful for optimizing the performance of zirconium oxynitrides thermometer. Zirconium oxynitrides thin film Elsevier Efros–Shklovskii variable hopping conduction Elsevier Mott variable hopping conduction Elsevier Zhan, Guanghui oth Liu, Jingquan oth Yang, Bin oth Xu, Bin oth Feng, Jie oth Chen, Xiang oth Yang, Chunsheng oth Enthalten in Elsevier Bredács, M. ELSEVIER Towards circular plastics: Density and MFR prediction of PE with IR spectroscopic techniques 2023 Amsterdam (DE-627)ELV010517057 volume:475 year:2015 day:15 month:10 pages:86-89 extent:4 https://doi.org/10.1016/j.physb.2015.06.026 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_203 GBV_ILN_227 GBV_ILN_2010 51.30 Werkstoffprüfung Werkstoffuntersuchung VZ AR 475 2015 15 1015 86-89 4 045F 530 |
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Zirconium oxynitrides thin film thermometers were demonstrated to be useful temperature sensors. However, the basic conduction mechanism of zirconium oxynitrides films has been a long-standing issue, which hinders the prediction and optimization of their ultimate performance. In this letter, zirconium oxynitrides films were grown on sapphire substrates by magnetron sputtering and their electric transport mechanism has been systemically investigated. It was found that in high temperatures region (>150K) the electrical conductivity was dominated by thermal activation for all samples. In the low temperatures range, while Mott variable hopping conduction (VRH) was dominated the transport for films with relatively low resistance, a crossover from Mott VRH conduction to Efros–Shklovskii (ES) VRH was observed for films with relatively high resistance. This low temperature crossover from Mott to ES VRH indicates the presence of a Coulomb gap (~7meV). These results demonstrate the competing and tunable conduction mechanism in zirconium oxynitrides thin films, which would be helpful for optimizing the performance of zirconium oxynitrides thermometer. |
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Zirconium oxynitrides thin film thermometers were demonstrated to be useful temperature sensors. However, the basic conduction mechanism of zirconium oxynitrides films has been a long-standing issue, which hinders the prediction and optimization of their ultimate performance. In this letter, zirconium oxynitrides films were grown on sapphire substrates by magnetron sputtering and their electric transport mechanism has been systemically investigated. It was found that in high temperatures region (>150K) the electrical conductivity was dominated by thermal activation for all samples. In the low temperatures range, while Mott variable hopping conduction (VRH) was dominated the transport for films with relatively low resistance, a crossover from Mott VRH conduction to Efros–Shklovskii (ES) VRH was observed for films with relatively high resistance. This low temperature crossover from Mott to ES VRH indicates the presence of a Coulomb gap (~7meV). These results demonstrate the competing and tunable conduction mechanism in zirconium oxynitrides thin films, which would be helpful for optimizing the performance of zirconium oxynitrides thermometer. |
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Zirconium oxynitrides thin film thermometers were demonstrated to be useful temperature sensors. However, the basic conduction mechanism of zirconium oxynitrides films has been a long-standing issue, which hinders the prediction and optimization of their ultimate performance. In this letter, zirconium oxynitrides films were grown on sapphire substrates by magnetron sputtering and their electric transport mechanism has been systemically investigated. It was found that in high temperatures region (>150K) the electrical conductivity was dominated by thermal activation for all samples. In the low temperatures range, while Mott variable hopping conduction (VRH) was dominated the transport for films with relatively low resistance, a crossover from Mott VRH conduction to Efros–Shklovskii (ES) VRH was observed for films with relatively high resistance. This low temperature crossover from Mott to ES VRH indicates the presence of a Coulomb gap (~7meV). These results demonstrate the competing and tunable conduction mechanism in zirconium oxynitrides thin films, which would be helpful for optimizing the performance of zirconium oxynitrides thermometer. |
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