Growth and characterization of single phase AgInS2 crystals for energy conversion application through β-In2S3 by thermal evaporation
Silver indium sulfide thin films have been successfully synthesized out from β-In2S3 buffer layers using appropriate heat treatments of evaporated β-In2S3/Ag. X-ray analysis show that the β-In2S3/Ag crystalline films with 60nm thickness of Ag, which were annealed under sulfur atmosphere at 400°C, we...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Gantassi, A. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2015transfer abstract |
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| Schlagwörter: |
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| Umfang: |
10 |
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| Übergeordnetes Werk: |
Enthalten in: The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting - 2011, Amsterdam [u.a.] |
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| Übergeordnetes Werk: |
volume:413 ; year:2015 ; day:1 ; month:03 ; pages:51-60 ; extent:10 |
| Links: |
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| DOI / URN: |
10.1016/j.jcrysgro.2014.12.012 |
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| 245 | 1 | 0 | |a Growth and characterization of single phase AgInS2 crystals for energy conversion application through β-In2S3 by thermal evaporation |
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| 520 | |a Silver indium sulfide thin films have been successfully synthesized out from β-In2S3 buffer layers using appropriate heat treatments of evaporated β-In2S3/Ag. X-ray analysis show that the β-In2S3/Ag crystalline films with 60nm thickness of Ag, which were annealed under sulfur atmosphere at 400°C, were mainly formed by the ternary AgInS2. Raman spectra confirmed that the observed peaks were characteristics to AgInS2 chalcopyrite of thin film structure. The optical band gap of AgInS2, which was evaluated as nearly 1.80eV, was confirmed by the electrical study which yielded a value in the order of 1.78eV. The electrical conductivity, conduction mechanism, dielectric properties and relaxation model of this thin film were studied using impedance spectroscopy technique in the frequency range 5Hz–13MHz under various temperatures (370–440°C). Besides, complex impedance, AC conductivity and complex electric modulus have been investigated on the basis of frequency and temperature dependence. | ||
| 520 | |a Silver indium sulfide thin films have been successfully synthesized out from β-In2S3 buffer layers using appropriate heat treatments of evaporated β-In2S3/Ag. X-ray analysis show that the β-In2S3/Ag crystalline films with 60nm thickness of Ag, which were annealed under sulfur atmosphere at 400°C, were mainly formed by the ternary AgInS2. Raman spectra confirmed that the observed peaks were characteristics to AgInS2 chalcopyrite of thin film structure. The optical band gap of AgInS2, which was evaluated as nearly 1.80eV, was confirmed by the electrical study which yielded a value in the order of 1.78eV. The electrical conductivity, conduction mechanism, dielectric properties and relaxation model of this thin film were studied using impedance spectroscopy technique in the frequency range 5Hz–13MHz under various temperatures (370–440°C). Besides, complex impedance, AC conductivity and complex electric modulus have been investigated on the basis of frequency and temperature dependence. | ||
| 650 | 7 | |a Complex electric modulus |2 Elsevier | |
| 650 | 7 | |a AC conductivity |2 Elsevier | |
| 650 | 7 | |a Dielectric constants |2 Elsevier | |
| 650 | 7 | |a AgInS2 thin film |2 Elsevier | |
| 650 | 7 | |a A1. Raman spectroscopy |2 Elsevier | |
| 700 | 1 | |a Essaidi, H. |4 oth | |
| 700 | 1 | |a Ben Hamed, Z. |4 oth | |
| 700 | 1 | |a Gherouel, D. |4 oth | |
| 700 | 1 | |a Boubaker, K. |4 oth | |
| 700 | 1 | |a Colantoni, A. |4 oth | |
| 700 | 1 | |a Monarca, D. |4 oth | |
| 700 | 1 | |a Kouki, F. |4 oth | |
| 700 | 1 | |a Amlouk, M. |4 oth | |
| 700 | 1 | |a Manoubi, T. |4 oth | |
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10.1016/j.jcrysgro.2014.12.012 doi GBVA2015022000009.pica (DE-627)ELV029351146 (ELSEVIER)S0022-0248(14)00827-6 DE-627 ger DE-627 rakwb eng 540 540 DE-600 610 VZ 570 540 VZ Gantassi, A. verfasserin aut Growth and characterization of single phase AgInS2 crystals for energy conversion application through β-In2S3 by thermal evaporation 2015transfer abstract 10 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Silver indium sulfide thin films have been successfully synthesized out from β-In2S3 buffer layers using appropriate heat treatments of evaporated β-In2S3/Ag. X-ray analysis show that the β-In2S3/Ag crystalline films with 60nm thickness of Ag, which were annealed under sulfur atmosphere at 400°C, were mainly formed by the ternary AgInS2. Raman spectra confirmed that the observed peaks were characteristics to AgInS2 chalcopyrite of thin film structure. The optical band gap of AgInS2, which was evaluated as nearly 1.80eV, was confirmed by the electrical study which yielded a value in the order of 1.78eV. The electrical conductivity, conduction mechanism, dielectric properties and relaxation model of this thin film were studied using impedance spectroscopy technique in the frequency range 5Hz–13MHz under various temperatures (370–440°C). Besides, complex impedance, AC conductivity and complex electric modulus have been investigated on the basis of frequency and temperature dependence. Silver indium sulfide thin films have been successfully synthesized out from β-In2S3 buffer layers using appropriate heat treatments of evaporated β-In2S3/Ag. X-ray analysis show that the β-In2S3/Ag crystalline films with 60nm thickness of Ag, which were annealed under sulfur atmosphere at 400°C, were mainly formed by the ternary AgInS2. Raman spectra confirmed that the observed peaks were characteristics to AgInS2 chalcopyrite of thin film structure. The optical band gap of AgInS2, which was evaluated as nearly 1.80eV, was confirmed by the electrical study which yielded a value in the order of 1.78eV. The electrical conductivity, conduction mechanism, dielectric properties and relaxation model of this thin film were studied using impedance spectroscopy technique in the frequency range 5Hz–13MHz under various temperatures (370–440°C). Besides, complex impedance, AC conductivity and complex electric modulus have been investigated on the basis of frequency and temperature dependence. Complex electric modulus Elsevier AC conductivity Elsevier Dielectric constants Elsevier AgInS2 thin film Elsevier A1. Raman spectroscopy Elsevier Essaidi, H. oth Ben Hamed, Z. oth Gherouel, D. oth Boubaker, K. oth Colantoni, A. oth Monarca, D. oth Kouki, F. oth Amlouk, M. oth Manoubi, T. oth Enthalten in Elsevier The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting 2011 Amsterdam [u.a.] (DE-627)ELV010662650 volume:413 year:2015 day:1 month:03 pages:51-60 extent:10 https://doi.org/10.1016/j.jcrysgro.2014.12.012 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_22 GBV_ILN_40 GBV_ILN_105 AR 413 2015 1 0301 51-60 10 045F 540 |
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10.1016/j.jcrysgro.2014.12.012 doi GBVA2015022000009.pica (DE-627)ELV029351146 (ELSEVIER)S0022-0248(14)00827-6 DE-627 ger DE-627 rakwb eng 540 540 DE-600 610 VZ 570 540 VZ Gantassi, A. verfasserin aut Growth and characterization of single phase AgInS2 crystals for energy conversion application through β-In2S3 by thermal evaporation 2015transfer abstract 10 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Silver indium sulfide thin films have been successfully synthesized out from β-In2S3 buffer layers using appropriate heat treatments of evaporated β-In2S3/Ag. X-ray analysis show that the β-In2S3/Ag crystalline films with 60nm thickness of Ag, which were annealed under sulfur atmosphere at 400°C, were mainly formed by the ternary AgInS2. Raman spectra confirmed that the observed peaks were characteristics to AgInS2 chalcopyrite of thin film structure. The optical band gap of AgInS2, which was evaluated as nearly 1.80eV, was confirmed by the electrical study which yielded a value in the order of 1.78eV. The electrical conductivity, conduction mechanism, dielectric properties and relaxation model of this thin film were studied using impedance spectroscopy technique in the frequency range 5Hz–13MHz under various temperatures (370–440°C). Besides, complex impedance, AC conductivity and complex electric modulus have been investigated on the basis of frequency and temperature dependence. Silver indium sulfide thin films have been successfully synthesized out from β-In2S3 buffer layers using appropriate heat treatments of evaporated β-In2S3/Ag. X-ray analysis show that the β-In2S3/Ag crystalline films with 60nm thickness of Ag, which were annealed under sulfur atmosphere at 400°C, were mainly formed by the ternary AgInS2. Raman spectra confirmed that the observed peaks were characteristics to AgInS2 chalcopyrite of thin film structure. The optical band gap of AgInS2, which was evaluated as nearly 1.80eV, was confirmed by the electrical study which yielded a value in the order of 1.78eV. The electrical conductivity, conduction mechanism, dielectric properties and relaxation model of this thin film were studied using impedance spectroscopy technique in the frequency range 5Hz–13MHz under various temperatures (370–440°C). Besides, complex impedance, AC conductivity and complex electric modulus have been investigated on the basis of frequency and temperature dependence. Complex electric modulus Elsevier AC conductivity Elsevier Dielectric constants Elsevier AgInS2 thin film Elsevier A1. Raman spectroscopy Elsevier Essaidi, H. oth Ben Hamed, Z. oth Gherouel, D. oth Boubaker, K. oth Colantoni, A. oth Monarca, D. oth Kouki, F. oth Amlouk, M. oth Manoubi, T. oth Enthalten in Elsevier The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting 2011 Amsterdam [u.a.] (DE-627)ELV010662650 volume:413 year:2015 day:1 month:03 pages:51-60 extent:10 https://doi.org/10.1016/j.jcrysgro.2014.12.012 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_22 GBV_ILN_40 GBV_ILN_105 AR 413 2015 1 0301 51-60 10 045F 540 |
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10.1016/j.jcrysgro.2014.12.012 doi GBVA2015022000009.pica (DE-627)ELV029351146 (ELSEVIER)S0022-0248(14)00827-6 DE-627 ger DE-627 rakwb eng 540 540 DE-600 610 VZ 570 540 VZ Gantassi, A. verfasserin aut Growth and characterization of single phase AgInS2 crystals for energy conversion application through β-In2S3 by thermal evaporation 2015transfer abstract 10 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Silver indium sulfide thin films have been successfully synthesized out from β-In2S3 buffer layers using appropriate heat treatments of evaporated β-In2S3/Ag. X-ray analysis show that the β-In2S3/Ag crystalline films with 60nm thickness of Ag, which were annealed under sulfur atmosphere at 400°C, were mainly formed by the ternary AgInS2. Raman spectra confirmed that the observed peaks were characteristics to AgInS2 chalcopyrite of thin film structure. The optical band gap of AgInS2, which was evaluated as nearly 1.80eV, was confirmed by the electrical study which yielded a value in the order of 1.78eV. The electrical conductivity, conduction mechanism, dielectric properties and relaxation model of this thin film were studied using impedance spectroscopy technique in the frequency range 5Hz–13MHz under various temperatures (370–440°C). Besides, complex impedance, AC conductivity and complex electric modulus have been investigated on the basis of frequency and temperature dependence. Silver indium sulfide thin films have been successfully synthesized out from β-In2S3 buffer layers using appropriate heat treatments of evaporated β-In2S3/Ag. X-ray analysis show that the β-In2S3/Ag crystalline films with 60nm thickness of Ag, which were annealed under sulfur atmosphere at 400°C, were mainly formed by the ternary AgInS2. Raman spectra confirmed that the observed peaks were characteristics to AgInS2 chalcopyrite of thin film structure. The optical band gap of AgInS2, which was evaluated as nearly 1.80eV, was confirmed by the electrical study which yielded a value in the order of 1.78eV. The electrical conductivity, conduction mechanism, dielectric properties and relaxation model of this thin film were studied using impedance spectroscopy technique in the frequency range 5Hz–13MHz under various temperatures (370–440°C). Besides, complex impedance, AC conductivity and complex electric modulus have been investigated on the basis of frequency and temperature dependence. Complex electric modulus Elsevier AC conductivity Elsevier Dielectric constants Elsevier AgInS2 thin film Elsevier A1. Raman spectroscopy Elsevier Essaidi, H. oth Ben Hamed, Z. oth Gherouel, D. oth Boubaker, K. oth Colantoni, A. oth Monarca, D. oth Kouki, F. oth Amlouk, M. oth Manoubi, T. oth Enthalten in Elsevier The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting 2011 Amsterdam [u.a.] (DE-627)ELV010662650 volume:413 year:2015 day:1 month:03 pages:51-60 extent:10 https://doi.org/10.1016/j.jcrysgro.2014.12.012 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_22 GBV_ILN_40 GBV_ILN_105 AR 413 2015 1 0301 51-60 10 045F 540 |
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10.1016/j.jcrysgro.2014.12.012 doi GBVA2015022000009.pica (DE-627)ELV029351146 (ELSEVIER)S0022-0248(14)00827-6 DE-627 ger DE-627 rakwb eng 540 540 DE-600 610 VZ 570 540 VZ Gantassi, A. verfasserin aut Growth and characterization of single phase AgInS2 crystals for energy conversion application through β-In2S3 by thermal evaporation 2015transfer abstract 10 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Silver indium sulfide thin films have been successfully synthesized out from β-In2S3 buffer layers using appropriate heat treatments of evaporated β-In2S3/Ag. X-ray analysis show that the β-In2S3/Ag crystalline films with 60nm thickness of Ag, which were annealed under sulfur atmosphere at 400°C, were mainly formed by the ternary AgInS2. Raman spectra confirmed that the observed peaks were characteristics to AgInS2 chalcopyrite of thin film structure. The optical band gap of AgInS2, which was evaluated as nearly 1.80eV, was confirmed by the electrical study which yielded a value in the order of 1.78eV. The electrical conductivity, conduction mechanism, dielectric properties and relaxation model of this thin film were studied using impedance spectroscopy technique in the frequency range 5Hz–13MHz under various temperatures (370–440°C). Besides, complex impedance, AC conductivity and complex electric modulus have been investigated on the basis of frequency and temperature dependence. Silver indium sulfide thin films have been successfully synthesized out from β-In2S3 buffer layers using appropriate heat treatments of evaporated β-In2S3/Ag. X-ray analysis show that the β-In2S3/Ag crystalline films with 60nm thickness of Ag, which were annealed under sulfur atmosphere at 400°C, were mainly formed by the ternary AgInS2. Raman spectra confirmed that the observed peaks were characteristics to AgInS2 chalcopyrite of thin film structure. The optical band gap of AgInS2, which was evaluated as nearly 1.80eV, was confirmed by the electrical study which yielded a value in the order of 1.78eV. The electrical conductivity, conduction mechanism, dielectric properties and relaxation model of this thin film were studied using impedance spectroscopy technique in the frequency range 5Hz–13MHz under various temperatures (370–440°C). Besides, complex impedance, AC conductivity and complex electric modulus have been investigated on the basis of frequency and temperature dependence. Complex electric modulus Elsevier AC conductivity Elsevier Dielectric constants Elsevier AgInS2 thin film Elsevier A1. Raman spectroscopy Elsevier Essaidi, H. oth Ben Hamed, Z. oth Gherouel, D. oth Boubaker, K. oth Colantoni, A. oth Monarca, D. oth Kouki, F. oth Amlouk, M. oth Manoubi, T. oth Enthalten in Elsevier The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting 2011 Amsterdam [u.a.] (DE-627)ELV010662650 volume:413 year:2015 day:1 month:03 pages:51-60 extent:10 https://doi.org/10.1016/j.jcrysgro.2014.12.012 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_22 GBV_ILN_40 GBV_ILN_105 AR 413 2015 1 0301 51-60 10 045F 540 |
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10.1016/j.jcrysgro.2014.12.012 doi GBVA2015022000009.pica (DE-627)ELV029351146 (ELSEVIER)S0022-0248(14)00827-6 DE-627 ger DE-627 rakwb eng 540 540 DE-600 610 VZ 570 540 VZ Gantassi, A. verfasserin aut Growth and characterization of single phase AgInS2 crystals for energy conversion application through β-In2S3 by thermal evaporation 2015transfer abstract 10 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Silver indium sulfide thin films have been successfully synthesized out from β-In2S3 buffer layers using appropriate heat treatments of evaporated β-In2S3/Ag. X-ray analysis show that the β-In2S3/Ag crystalline films with 60nm thickness of Ag, which were annealed under sulfur atmosphere at 400°C, were mainly formed by the ternary AgInS2. Raman spectra confirmed that the observed peaks were characteristics to AgInS2 chalcopyrite of thin film structure. The optical band gap of AgInS2, which was evaluated as nearly 1.80eV, was confirmed by the electrical study which yielded a value in the order of 1.78eV. The electrical conductivity, conduction mechanism, dielectric properties and relaxation model of this thin film were studied using impedance spectroscopy technique in the frequency range 5Hz–13MHz under various temperatures (370–440°C). Besides, complex impedance, AC conductivity and complex electric modulus have been investigated on the basis of frequency and temperature dependence. Silver indium sulfide thin films have been successfully synthesized out from β-In2S3 buffer layers using appropriate heat treatments of evaporated β-In2S3/Ag. X-ray analysis show that the β-In2S3/Ag crystalline films with 60nm thickness of Ag, which were annealed under sulfur atmosphere at 400°C, were mainly formed by the ternary AgInS2. Raman spectra confirmed that the observed peaks were characteristics to AgInS2 chalcopyrite of thin film structure. The optical band gap of AgInS2, which was evaluated as nearly 1.80eV, was confirmed by the electrical study which yielded a value in the order of 1.78eV. The electrical conductivity, conduction mechanism, dielectric properties and relaxation model of this thin film were studied using impedance spectroscopy technique in the frequency range 5Hz–13MHz under various temperatures (370–440°C). Besides, complex impedance, AC conductivity and complex electric modulus have been investigated on the basis of frequency and temperature dependence. Complex electric modulus Elsevier AC conductivity Elsevier Dielectric constants Elsevier AgInS2 thin film Elsevier A1. Raman spectroscopy Elsevier Essaidi, H. oth Ben Hamed, Z. oth Gherouel, D. oth Boubaker, K. oth Colantoni, A. oth Monarca, D. oth Kouki, F. oth Amlouk, M. oth Manoubi, T. oth Enthalten in Elsevier The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting 2011 Amsterdam [u.a.] (DE-627)ELV010662650 volume:413 year:2015 day:1 month:03 pages:51-60 extent:10 https://doi.org/10.1016/j.jcrysgro.2014.12.012 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_22 GBV_ILN_40 GBV_ILN_105 AR 413 2015 1 0301 51-60 10 045F 540 |
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Growth and characterization of single phase AgInS2 crystals for energy conversion application through β-In2S3 by thermal evaporation |
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Silver indium sulfide thin films have been successfully synthesized out from β-In2S3 buffer layers using appropriate heat treatments of evaporated β-In2S3/Ag. X-ray analysis show that the β-In2S3/Ag crystalline films with 60nm thickness of Ag, which were annealed under sulfur atmosphere at 400°C, were mainly formed by the ternary AgInS2. Raman spectra confirmed that the observed peaks were characteristics to AgInS2 chalcopyrite of thin film structure. The optical band gap of AgInS2, which was evaluated as nearly 1.80eV, was confirmed by the electrical study which yielded a value in the order of 1.78eV. The electrical conductivity, conduction mechanism, dielectric properties and relaxation model of this thin film were studied using impedance spectroscopy technique in the frequency range 5Hz–13MHz under various temperatures (370–440°C). Besides, complex impedance, AC conductivity and complex electric modulus have been investigated on the basis of frequency and temperature dependence. |
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Silver indium sulfide thin films have been successfully synthesized out from β-In2S3 buffer layers using appropriate heat treatments of evaporated β-In2S3/Ag. X-ray analysis show that the β-In2S3/Ag crystalline films with 60nm thickness of Ag, which were annealed under sulfur atmosphere at 400°C, were mainly formed by the ternary AgInS2. Raman spectra confirmed that the observed peaks were characteristics to AgInS2 chalcopyrite of thin film structure. The optical band gap of AgInS2, which was evaluated as nearly 1.80eV, was confirmed by the electrical study which yielded a value in the order of 1.78eV. The electrical conductivity, conduction mechanism, dielectric properties and relaxation model of this thin film were studied using impedance spectroscopy technique in the frequency range 5Hz–13MHz under various temperatures (370–440°C). Besides, complex impedance, AC conductivity and complex electric modulus have been investigated on the basis of frequency and temperature dependence. |
| abstract_unstemmed |
Silver indium sulfide thin films have been successfully synthesized out from β-In2S3 buffer layers using appropriate heat treatments of evaporated β-In2S3/Ag. X-ray analysis show that the β-In2S3/Ag crystalline films with 60nm thickness of Ag, which were annealed under sulfur atmosphere at 400°C, were mainly formed by the ternary AgInS2. Raman spectra confirmed that the observed peaks were characteristics to AgInS2 chalcopyrite of thin film structure. The optical band gap of AgInS2, which was evaluated as nearly 1.80eV, was confirmed by the electrical study which yielded a value in the order of 1.78eV. The electrical conductivity, conduction mechanism, dielectric properties and relaxation model of this thin film were studied using impedance spectroscopy technique in the frequency range 5Hz–13MHz under various temperatures (370–440°C). Besides, complex impedance, AC conductivity and complex electric modulus have been investigated on the basis of frequency and temperature dependence. |
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