Dual layer ZnO configuration over nanostructured porous silicon substrate for enhanced memristive switching
The performance of memristive devices has been investigated as a function of annealing temperature of zinc oxide (ZnO) thin films over porous silicon (PSi) in dual layer configuration. Electrical characterization demonstrates that nanostructured PSi substrate as well as ZnO layer configuration contr...
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| Autor*in: |
Martínez, Lizeth [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2016transfer abstract |
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| Umfang: |
8 |
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| Übergeordnetes Werk: |
Enthalten in: A two-stage gap safe screening rule for multi-label optimal margin distribution machine - Ma, Mengdan ELSEVIER, 2022, an interdisciplinary journal on the science and technology of nanostructures, Oxford [u.a.] |
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| Übergeordnetes Werk: |
volume:100 ; year:2016 ; pages:89-96 ; extent:8 |
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| DOI / URN: |
10.1016/j.spmi.2016.09.001 |
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| 520 | |a The performance of memristive devices has been investigated as a function of annealing temperature of zinc oxide (ZnO) thin films over porous silicon (PSi) in dual layer configuration. Electrical characterization demonstrates that nanostructured PSi substrate as well as ZnO layer configuration contributes effectively to an enhancement of the memristive ratio by a factor of 8. The effect of single and differently annealed double layer configuration of ZnO-PS produces continuous and abrupt switching respectively. Endurance test reveals a decrease in the switching ratio with an increase in the step size. | ||
| 520 | |a The performance of memristive devices has been investigated as a function of annealing temperature of zinc oxide (ZnO) thin films over porous silicon (PSi) in dual layer configuration. Electrical characterization demonstrates that nanostructured PSi substrate as well as ZnO layer configuration contributes effectively to an enhancement of the memristive ratio by a factor of 8. The effect of single and differently annealed double layer configuration of ZnO-PS produces continuous and abrupt switching respectively. Endurance test reveals a decrease in the switching ratio with an increase in the step size. | ||
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10.1016/j.spmi.2016.09.001 doi GBV00000000000080A.pica (DE-627)ELV029836778 (ELSEVIER)S0749-6036(16)30829-1 DE-627 ger DE-627 rakwb eng 530 530 DE-600 004 VZ 50.23 bkl 54.72 bkl Martínez, Lizeth verfasserin aut Dual layer ZnO configuration over nanostructured porous silicon substrate for enhanced memristive switching 2016transfer abstract 8 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The performance of memristive devices has been investigated as a function of annealing temperature of zinc oxide (ZnO) thin films over porous silicon (PSi) in dual layer configuration. Electrical characterization demonstrates that nanostructured PSi substrate as well as ZnO layer configuration contributes effectively to an enhancement of the memristive ratio by a factor of 8. The effect of single and differently annealed double layer configuration of ZnO-PS produces continuous and abrupt switching respectively. Endurance test reveals a decrease in the switching ratio with an increase in the step size. The performance of memristive devices has been investigated as a function of annealing temperature of zinc oxide (ZnO) thin films over porous silicon (PSi) in dual layer configuration. Electrical characterization demonstrates that nanostructured PSi substrate as well as ZnO layer configuration contributes effectively to an enhancement of the memristive ratio by a factor of 8. The effect of single and differently annealed double layer configuration of ZnO-PS produces continuous and abrupt switching respectively. Endurance test reveals a decrease in the switching ratio with an increase in the step size. Composite Elsevier Memristor Elsevier Zinc oxide Elsevier Porous silicon Elsevier Becerra, David oth Agarwal, Vivechana oth Enthalten in Elsevier Science, Academic Press Ma, Mengdan ELSEVIER A two-stage gap safe screening rule for multi-label optimal margin distribution machine 2022 an interdisciplinary journal on the science and technology of nanostructures Oxford [u.a.] (DE-627)ELV008997705 volume:100 year:2016 pages:89-96 extent:8 https://doi.org/10.1016/j.spmi.2016.09.001 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 50.23 Regelungstechnik Steuerungstechnik VZ 54.72 Künstliche Intelligenz VZ AR 100 2016 89-96 8 045F 530 |
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10.1016/j.spmi.2016.09.001 doi GBV00000000000080A.pica (DE-627)ELV029836778 (ELSEVIER)S0749-6036(16)30829-1 DE-627 ger DE-627 rakwb eng 530 530 DE-600 004 VZ 50.23 bkl 54.72 bkl Martínez, Lizeth verfasserin aut Dual layer ZnO configuration over nanostructured porous silicon substrate for enhanced memristive switching 2016transfer abstract 8 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The performance of memristive devices has been investigated as a function of annealing temperature of zinc oxide (ZnO) thin films over porous silicon (PSi) in dual layer configuration. Electrical characterization demonstrates that nanostructured PSi substrate as well as ZnO layer configuration contributes effectively to an enhancement of the memristive ratio by a factor of 8. The effect of single and differently annealed double layer configuration of ZnO-PS produces continuous and abrupt switching respectively. Endurance test reveals a decrease in the switching ratio with an increase in the step size. The performance of memristive devices has been investigated as a function of annealing temperature of zinc oxide (ZnO) thin films over porous silicon (PSi) in dual layer configuration. Electrical characterization demonstrates that nanostructured PSi substrate as well as ZnO layer configuration contributes effectively to an enhancement of the memristive ratio by a factor of 8. The effect of single and differently annealed double layer configuration of ZnO-PS produces continuous and abrupt switching respectively. Endurance test reveals a decrease in the switching ratio with an increase in the step size. Composite Elsevier Memristor Elsevier Zinc oxide Elsevier Porous silicon Elsevier Becerra, David oth Agarwal, Vivechana oth Enthalten in Elsevier Science, Academic Press Ma, Mengdan ELSEVIER A two-stage gap safe screening rule for multi-label optimal margin distribution machine 2022 an interdisciplinary journal on the science and technology of nanostructures Oxford [u.a.] (DE-627)ELV008997705 volume:100 year:2016 pages:89-96 extent:8 https://doi.org/10.1016/j.spmi.2016.09.001 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 50.23 Regelungstechnik Steuerungstechnik VZ 54.72 Künstliche Intelligenz VZ AR 100 2016 89-96 8 045F 530 |
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10.1016/j.spmi.2016.09.001 doi GBV00000000000080A.pica (DE-627)ELV029836778 (ELSEVIER)S0749-6036(16)30829-1 DE-627 ger DE-627 rakwb eng 530 530 DE-600 004 VZ 50.23 bkl 54.72 bkl Martínez, Lizeth verfasserin aut Dual layer ZnO configuration over nanostructured porous silicon substrate for enhanced memristive switching 2016transfer abstract 8 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The performance of memristive devices has been investigated as a function of annealing temperature of zinc oxide (ZnO) thin films over porous silicon (PSi) in dual layer configuration. Electrical characterization demonstrates that nanostructured PSi substrate as well as ZnO layer configuration contributes effectively to an enhancement of the memristive ratio by a factor of 8. The effect of single and differently annealed double layer configuration of ZnO-PS produces continuous and abrupt switching respectively. Endurance test reveals a decrease in the switching ratio with an increase in the step size. The performance of memristive devices has been investigated as a function of annealing temperature of zinc oxide (ZnO) thin films over porous silicon (PSi) in dual layer configuration. Electrical characterization demonstrates that nanostructured PSi substrate as well as ZnO layer configuration contributes effectively to an enhancement of the memristive ratio by a factor of 8. The effect of single and differently annealed double layer configuration of ZnO-PS produces continuous and abrupt switching respectively. Endurance test reveals a decrease in the switching ratio with an increase in the step size. Composite Elsevier Memristor Elsevier Zinc oxide Elsevier Porous silicon Elsevier Becerra, David oth Agarwal, Vivechana oth Enthalten in Elsevier Science, Academic Press Ma, Mengdan ELSEVIER A two-stage gap safe screening rule for multi-label optimal margin distribution machine 2022 an interdisciplinary journal on the science and technology of nanostructures Oxford [u.a.] (DE-627)ELV008997705 volume:100 year:2016 pages:89-96 extent:8 https://doi.org/10.1016/j.spmi.2016.09.001 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 50.23 Regelungstechnik Steuerungstechnik VZ 54.72 Künstliche Intelligenz VZ AR 100 2016 89-96 8 045F 530 |
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10.1016/j.spmi.2016.09.001 doi GBV00000000000080A.pica (DE-627)ELV029836778 (ELSEVIER)S0749-6036(16)30829-1 DE-627 ger DE-627 rakwb eng 530 530 DE-600 004 VZ 50.23 bkl 54.72 bkl Martínez, Lizeth verfasserin aut Dual layer ZnO configuration over nanostructured porous silicon substrate for enhanced memristive switching 2016transfer abstract 8 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The performance of memristive devices has been investigated as a function of annealing temperature of zinc oxide (ZnO) thin films over porous silicon (PSi) in dual layer configuration. Electrical characterization demonstrates that nanostructured PSi substrate as well as ZnO layer configuration contributes effectively to an enhancement of the memristive ratio by a factor of 8. The effect of single and differently annealed double layer configuration of ZnO-PS produces continuous and abrupt switching respectively. Endurance test reveals a decrease in the switching ratio with an increase in the step size. The performance of memristive devices has been investigated as a function of annealing temperature of zinc oxide (ZnO) thin films over porous silicon (PSi) in dual layer configuration. Electrical characterization demonstrates that nanostructured PSi substrate as well as ZnO layer configuration contributes effectively to an enhancement of the memristive ratio by a factor of 8. The effect of single and differently annealed double layer configuration of ZnO-PS produces continuous and abrupt switching respectively. Endurance test reveals a decrease in the switching ratio with an increase in the step size. Composite Elsevier Memristor Elsevier Zinc oxide Elsevier Porous silicon Elsevier Becerra, David oth Agarwal, Vivechana oth Enthalten in Elsevier Science, Academic Press Ma, Mengdan ELSEVIER A two-stage gap safe screening rule for multi-label optimal margin distribution machine 2022 an interdisciplinary journal on the science and technology of nanostructures Oxford [u.a.] (DE-627)ELV008997705 volume:100 year:2016 pages:89-96 extent:8 https://doi.org/10.1016/j.spmi.2016.09.001 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 50.23 Regelungstechnik Steuerungstechnik VZ 54.72 Künstliche Intelligenz VZ AR 100 2016 89-96 8 045F 530 |
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10.1016/j.spmi.2016.09.001 doi GBV00000000000080A.pica (DE-627)ELV029836778 (ELSEVIER)S0749-6036(16)30829-1 DE-627 ger DE-627 rakwb eng 530 530 DE-600 004 VZ 50.23 bkl 54.72 bkl Martínez, Lizeth verfasserin aut Dual layer ZnO configuration over nanostructured porous silicon substrate for enhanced memristive switching 2016transfer abstract 8 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The performance of memristive devices has been investigated as a function of annealing temperature of zinc oxide (ZnO) thin films over porous silicon (PSi) in dual layer configuration. Electrical characterization demonstrates that nanostructured PSi substrate as well as ZnO layer configuration contributes effectively to an enhancement of the memristive ratio by a factor of 8. The effect of single and differently annealed double layer configuration of ZnO-PS produces continuous and abrupt switching respectively. Endurance test reveals a decrease in the switching ratio with an increase in the step size. The performance of memristive devices has been investigated as a function of annealing temperature of zinc oxide (ZnO) thin films over porous silicon (PSi) in dual layer configuration. Electrical characterization demonstrates that nanostructured PSi substrate as well as ZnO layer configuration contributes effectively to an enhancement of the memristive ratio by a factor of 8. The effect of single and differently annealed double layer configuration of ZnO-PS produces continuous and abrupt switching respectively. Endurance test reveals a decrease in the switching ratio with an increase in the step size. Composite Elsevier Memristor Elsevier Zinc oxide Elsevier Porous silicon Elsevier Becerra, David oth Agarwal, Vivechana oth Enthalten in Elsevier Science, Academic Press Ma, Mengdan ELSEVIER A two-stage gap safe screening rule for multi-label optimal margin distribution machine 2022 an interdisciplinary journal on the science and technology of nanostructures Oxford [u.a.] (DE-627)ELV008997705 volume:100 year:2016 pages:89-96 extent:8 https://doi.org/10.1016/j.spmi.2016.09.001 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 50.23 Regelungstechnik Steuerungstechnik VZ 54.72 Künstliche Intelligenz VZ AR 100 2016 89-96 8 045F 530 |
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Dual layer ZnO configuration over nanostructured porous silicon substrate for enhanced memristive switching |
| abstract |
The performance of memristive devices has been investigated as a function of annealing temperature of zinc oxide (ZnO) thin films over porous silicon (PSi) in dual layer configuration. Electrical characterization demonstrates that nanostructured PSi substrate as well as ZnO layer configuration contributes effectively to an enhancement of the memristive ratio by a factor of 8. The effect of single and differently annealed double layer configuration of ZnO-PS produces continuous and abrupt switching respectively. Endurance test reveals a decrease in the switching ratio with an increase in the step size. |
| abstractGer |
The performance of memristive devices has been investigated as a function of annealing temperature of zinc oxide (ZnO) thin films over porous silicon (PSi) in dual layer configuration. Electrical characterization demonstrates that nanostructured PSi substrate as well as ZnO layer configuration contributes effectively to an enhancement of the memristive ratio by a factor of 8. The effect of single and differently annealed double layer configuration of ZnO-PS produces continuous and abrupt switching respectively. Endurance test reveals a decrease in the switching ratio with an increase in the step size. |
| abstract_unstemmed |
The performance of memristive devices has been investigated as a function of annealing temperature of zinc oxide (ZnO) thin films over porous silicon (PSi) in dual layer configuration. Electrical characterization demonstrates that nanostructured PSi substrate as well as ZnO layer configuration contributes effectively to an enhancement of the memristive ratio by a factor of 8. The effect of single and differently annealed double layer configuration of ZnO-PS produces continuous and abrupt switching respectively. Endurance test reveals a decrease in the switching ratio with an increase in the step size. |
| collection_details |
GBV_USEFLAG_U GBV_ELV SYSFLAG_U |
| title_short |
Dual layer ZnO configuration over nanostructured porous silicon substrate for enhanced memristive switching |
| url |
https://doi.org/10.1016/j.spmi.2016.09.001 |
| remote_bool |
true |
| author2 |
Becerra, David Agarwal, Vivechana |
| author2Str |
Becerra, David Agarwal, Vivechana |
| ppnlink |
ELV008997705 |
| mediatype_str_mv |
z |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| author2_role |
oth oth |
| doi_str |
10.1016/j.spmi.2016.09.001 |
| up_date |
2024-07-06T22:30:08.795Z |
| _version_ |
1803870544903274496 |
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|
| score |
7.401618 |