Performance improvement of GaN-based near-UV LEDs with InGaN/AlGaN superlattices strain relief layer and AlGaN barrier
The carrier confinement effect and piezoelectric field-induced quantum-confined stark effect of different GaN-based near-UV LED samples from 395 nm to 410 nm emission peak wavelength were investigated theoretically and experimentally. It is found that near-UV LEDs with InGaN/AlGaN multiple quantum w...
Ausführliche Beschreibung
Autor*in: |
Jia, Chuanyu [verfasserIn] |
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Englisch |
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2016transfer abstract |
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7 |
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Enthalten in: A two-stage gap safe screening rule for multi-label optimal margin distribution machine - Ma, Mengdan ELSEVIER, 2022, an interdisciplinary journal on the science and technology of nanostructures, Oxford [u.a.] |
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Übergeordnetes Werk: |
volume:97 ; year:2016 ; pages:417-423 ; extent:7 |
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DOI / URN: |
10.1016/j.spmi.2016.07.001 |
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Katalog-ID: |
ELV02983855X |
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520 | |a The carrier confinement effect and piezoelectric field-induced quantum-confined stark effect of different GaN-based near-UV LED samples from 395 nm to 410 nm emission peak wavelength were investigated theoretically and experimentally. It is found that near-UV LEDs with InGaN/AlGaN multiple quantum wells (MQWs) active region have higher output power than those with InGaN/GaN MQWs for better carrier confinement effect. However, as emission peak wavelength is longer than 406 nm, the output power of the near-UV LEDs with AlGaN barrier is lower than that of the LEDs with GaN barrier due to more serious spatial separation of electrons and holes induced by the increase of piezoelectric field. The N-doped InGaN/AlGaN superlattices (SLs) were adopted as a strain relief layer (SRL) between n-GaN and MQWs in order to suppress the polarization field. It is demonstrated the output power of near-UV LEDs is increased obviously by using SLs SRL and AlGaN barrier for the discussed emission wavelength range. Besides, the forward voltage of near-UV LEDs with InGaN/AlGaN SLs SRL is lower than that of near-UV LEDs without SRL. | ||
520 | |a The carrier confinement effect and piezoelectric field-induced quantum-confined stark effect of different GaN-based near-UV LED samples from 395 nm to 410 nm emission peak wavelength were investigated theoretically and experimentally. It is found that near-UV LEDs with InGaN/AlGaN multiple quantum wells (MQWs) active region have higher output power than those with InGaN/GaN MQWs for better carrier confinement effect. However, as emission peak wavelength is longer than 406 nm, the output power of the near-UV LEDs with AlGaN barrier is lower than that of the LEDs with GaN barrier due to more serious spatial separation of electrons and holes induced by the increase of piezoelectric field. The N-doped InGaN/AlGaN superlattices (SLs) were adopted as a strain relief layer (SRL) between n-GaN and MQWs in order to suppress the polarization field. It is demonstrated the output power of near-UV LEDs is increased obviously by using SLs SRL and AlGaN barrier for the discussed emission wavelength range. Besides, the forward voltage of near-UV LEDs with InGaN/AlGaN SLs SRL is lower than that of near-UV LEDs without SRL. | ||
650 | 7 | |a Light-emitting diodes (LEDs) |2 Elsevier | |
650 | 7 | |a GaN-based |2 Elsevier | |
650 | 7 | |a AlGaN barrier |2 Elsevier | |
650 | 7 | |a Strain relief layer (SRL) |2 Elsevier | |
700 | 1 | |a Yu, Tongjun |4 oth | |
700 | 1 | |a Feng, Xiaohui |4 oth | |
700 | 1 | |a Wang, Kun |4 oth | |
700 | 1 | |a Zhang, Guoyi |4 oth | |
773 | 0 | 8 | |i Enthalten in |n Elsevier Science, Academic Press |a Ma, Mengdan ELSEVIER |t A two-stage gap safe screening rule for multi-label optimal margin distribution machine |d 2022 |d an interdisciplinary journal on the science and technology of nanostructures |g Oxford [u.a.] |w (DE-627)ELV008997705 |
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10.1016/j.spmi.2016.07.001 doi GBVA2016014000005.pica (DE-627)ELV02983855X (ELSEVIER)S0749-6036(16)30410-4 DE-627 ger DE-627 rakwb eng 530 530 DE-600 004 VZ 50.23 bkl 54.72 bkl Jia, Chuanyu verfasserin aut Performance improvement of GaN-based near-UV LEDs with InGaN/AlGaN superlattices strain relief layer and AlGaN barrier 2016transfer abstract 7 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The carrier confinement effect and piezoelectric field-induced quantum-confined stark effect of different GaN-based near-UV LED samples from 395 nm to 410 nm emission peak wavelength were investigated theoretically and experimentally. It is found that near-UV LEDs with InGaN/AlGaN multiple quantum wells (MQWs) active region have higher output power than those with InGaN/GaN MQWs for better carrier confinement effect. However, as emission peak wavelength is longer than 406 nm, the output power of the near-UV LEDs with AlGaN barrier is lower than that of the LEDs with GaN barrier due to more serious spatial separation of electrons and holes induced by the increase of piezoelectric field. The N-doped InGaN/AlGaN superlattices (SLs) were adopted as a strain relief layer (SRL) between n-GaN and MQWs in order to suppress the polarization field. It is demonstrated the output power of near-UV LEDs is increased obviously by using SLs SRL and AlGaN barrier for the discussed emission wavelength range. Besides, the forward voltage of near-UV LEDs with InGaN/AlGaN SLs SRL is lower than that of near-UV LEDs without SRL. The carrier confinement effect and piezoelectric field-induced quantum-confined stark effect of different GaN-based near-UV LED samples from 395 nm to 410 nm emission peak wavelength were investigated theoretically and experimentally. It is found that near-UV LEDs with InGaN/AlGaN multiple quantum wells (MQWs) active region have higher output power than those with InGaN/GaN MQWs for better carrier confinement effect. However, as emission peak wavelength is longer than 406 nm, the output power of the near-UV LEDs with AlGaN barrier is lower than that of the LEDs with GaN barrier due to more serious spatial separation of electrons and holes induced by the increase of piezoelectric field. The N-doped InGaN/AlGaN superlattices (SLs) were adopted as a strain relief layer (SRL) between n-GaN and MQWs in order to suppress the polarization field. It is demonstrated the output power of near-UV LEDs is increased obviously by using SLs SRL and AlGaN barrier for the discussed emission wavelength range. Besides, the forward voltage of near-UV LEDs with InGaN/AlGaN SLs SRL is lower than that of near-UV LEDs without SRL. Light-emitting diodes (LEDs) Elsevier GaN-based Elsevier AlGaN barrier Elsevier Strain relief layer (SRL) Elsevier Yu, Tongjun oth Feng, Xiaohui oth Wang, Kun oth Zhang, Guoyi oth Enthalten in Elsevier Science, Academic Press Ma, Mengdan ELSEVIER A two-stage gap safe screening rule for multi-label optimal margin distribution machine 2022 an interdisciplinary journal on the science and technology of nanostructures Oxford [u.a.] (DE-627)ELV008997705 volume:97 year:2016 pages:417-423 extent:7 https://doi.org/10.1016/j.spmi.2016.07.001 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 50.23 Regelungstechnik Steuerungstechnik VZ 54.72 Künstliche Intelligenz VZ AR 97 2016 417-423 7 045F 530 |
spelling |
10.1016/j.spmi.2016.07.001 doi GBVA2016014000005.pica (DE-627)ELV02983855X (ELSEVIER)S0749-6036(16)30410-4 DE-627 ger DE-627 rakwb eng 530 530 DE-600 004 VZ 50.23 bkl 54.72 bkl Jia, Chuanyu verfasserin aut Performance improvement of GaN-based near-UV LEDs with InGaN/AlGaN superlattices strain relief layer and AlGaN barrier 2016transfer abstract 7 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The carrier confinement effect and piezoelectric field-induced quantum-confined stark effect of different GaN-based near-UV LED samples from 395 nm to 410 nm emission peak wavelength were investigated theoretically and experimentally. It is found that near-UV LEDs with InGaN/AlGaN multiple quantum wells (MQWs) active region have higher output power than those with InGaN/GaN MQWs for better carrier confinement effect. However, as emission peak wavelength is longer than 406 nm, the output power of the near-UV LEDs with AlGaN barrier is lower than that of the LEDs with GaN barrier due to more serious spatial separation of electrons and holes induced by the increase of piezoelectric field. The N-doped InGaN/AlGaN superlattices (SLs) were adopted as a strain relief layer (SRL) between n-GaN and MQWs in order to suppress the polarization field. It is demonstrated the output power of near-UV LEDs is increased obviously by using SLs SRL and AlGaN barrier for the discussed emission wavelength range. Besides, the forward voltage of near-UV LEDs with InGaN/AlGaN SLs SRL is lower than that of near-UV LEDs without SRL. The carrier confinement effect and piezoelectric field-induced quantum-confined stark effect of different GaN-based near-UV LED samples from 395 nm to 410 nm emission peak wavelength were investigated theoretically and experimentally. It is found that near-UV LEDs with InGaN/AlGaN multiple quantum wells (MQWs) active region have higher output power than those with InGaN/GaN MQWs for better carrier confinement effect. However, as emission peak wavelength is longer than 406 nm, the output power of the near-UV LEDs with AlGaN barrier is lower than that of the LEDs with GaN barrier due to more serious spatial separation of electrons and holes induced by the increase of piezoelectric field. The N-doped InGaN/AlGaN superlattices (SLs) were adopted as a strain relief layer (SRL) between n-GaN and MQWs in order to suppress the polarization field. It is demonstrated the output power of near-UV LEDs is increased obviously by using SLs SRL and AlGaN barrier for the discussed emission wavelength range. Besides, the forward voltage of near-UV LEDs with InGaN/AlGaN SLs SRL is lower than that of near-UV LEDs without SRL. Light-emitting diodes (LEDs) Elsevier GaN-based Elsevier AlGaN barrier Elsevier Strain relief layer (SRL) Elsevier Yu, Tongjun oth Feng, Xiaohui oth Wang, Kun oth Zhang, Guoyi oth Enthalten in Elsevier Science, Academic Press Ma, Mengdan ELSEVIER A two-stage gap safe screening rule for multi-label optimal margin distribution machine 2022 an interdisciplinary journal on the science and technology of nanostructures Oxford [u.a.] (DE-627)ELV008997705 volume:97 year:2016 pages:417-423 extent:7 https://doi.org/10.1016/j.spmi.2016.07.001 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 50.23 Regelungstechnik Steuerungstechnik VZ 54.72 Künstliche Intelligenz VZ AR 97 2016 417-423 7 045F 530 |
allfields_unstemmed |
10.1016/j.spmi.2016.07.001 doi GBVA2016014000005.pica (DE-627)ELV02983855X (ELSEVIER)S0749-6036(16)30410-4 DE-627 ger DE-627 rakwb eng 530 530 DE-600 004 VZ 50.23 bkl 54.72 bkl Jia, Chuanyu verfasserin aut Performance improvement of GaN-based near-UV LEDs with InGaN/AlGaN superlattices strain relief layer and AlGaN barrier 2016transfer abstract 7 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The carrier confinement effect and piezoelectric field-induced quantum-confined stark effect of different GaN-based near-UV LED samples from 395 nm to 410 nm emission peak wavelength were investigated theoretically and experimentally. It is found that near-UV LEDs with InGaN/AlGaN multiple quantum wells (MQWs) active region have higher output power than those with InGaN/GaN MQWs for better carrier confinement effect. However, as emission peak wavelength is longer than 406 nm, the output power of the near-UV LEDs with AlGaN barrier is lower than that of the LEDs with GaN barrier due to more serious spatial separation of electrons and holes induced by the increase of piezoelectric field. The N-doped InGaN/AlGaN superlattices (SLs) were adopted as a strain relief layer (SRL) between n-GaN and MQWs in order to suppress the polarization field. It is demonstrated the output power of near-UV LEDs is increased obviously by using SLs SRL and AlGaN barrier for the discussed emission wavelength range. Besides, the forward voltage of near-UV LEDs with InGaN/AlGaN SLs SRL is lower than that of near-UV LEDs without SRL. The carrier confinement effect and piezoelectric field-induced quantum-confined stark effect of different GaN-based near-UV LED samples from 395 nm to 410 nm emission peak wavelength were investigated theoretically and experimentally. It is found that near-UV LEDs with InGaN/AlGaN multiple quantum wells (MQWs) active region have higher output power than those with InGaN/GaN MQWs for better carrier confinement effect. However, as emission peak wavelength is longer than 406 nm, the output power of the near-UV LEDs with AlGaN barrier is lower than that of the LEDs with GaN barrier due to more serious spatial separation of electrons and holes induced by the increase of piezoelectric field. The N-doped InGaN/AlGaN superlattices (SLs) were adopted as a strain relief layer (SRL) between n-GaN and MQWs in order to suppress the polarization field. It is demonstrated the output power of near-UV LEDs is increased obviously by using SLs SRL and AlGaN barrier for the discussed emission wavelength range. Besides, the forward voltage of near-UV LEDs with InGaN/AlGaN SLs SRL is lower than that of near-UV LEDs without SRL. Light-emitting diodes (LEDs) Elsevier GaN-based Elsevier AlGaN barrier Elsevier Strain relief layer (SRL) Elsevier Yu, Tongjun oth Feng, Xiaohui oth Wang, Kun oth Zhang, Guoyi oth Enthalten in Elsevier Science, Academic Press Ma, Mengdan ELSEVIER A two-stage gap safe screening rule for multi-label optimal margin distribution machine 2022 an interdisciplinary journal on the science and technology of nanostructures Oxford [u.a.] (DE-627)ELV008997705 volume:97 year:2016 pages:417-423 extent:7 https://doi.org/10.1016/j.spmi.2016.07.001 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 50.23 Regelungstechnik Steuerungstechnik VZ 54.72 Künstliche Intelligenz VZ AR 97 2016 417-423 7 045F 530 |
allfieldsGer |
10.1016/j.spmi.2016.07.001 doi GBVA2016014000005.pica (DE-627)ELV02983855X (ELSEVIER)S0749-6036(16)30410-4 DE-627 ger DE-627 rakwb eng 530 530 DE-600 004 VZ 50.23 bkl 54.72 bkl Jia, Chuanyu verfasserin aut Performance improvement of GaN-based near-UV LEDs with InGaN/AlGaN superlattices strain relief layer and AlGaN barrier 2016transfer abstract 7 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The carrier confinement effect and piezoelectric field-induced quantum-confined stark effect of different GaN-based near-UV LED samples from 395 nm to 410 nm emission peak wavelength were investigated theoretically and experimentally. It is found that near-UV LEDs with InGaN/AlGaN multiple quantum wells (MQWs) active region have higher output power than those with InGaN/GaN MQWs for better carrier confinement effect. However, as emission peak wavelength is longer than 406 nm, the output power of the near-UV LEDs with AlGaN barrier is lower than that of the LEDs with GaN barrier due to more serious spatial separation of electrons and holes induced by the increase of piezoelectric field. The N-doped InGaN/AlGaN superlattices (SLs) were adopted as a strain relief layer (SRL) between n-GaN and MQWs in order to suppress the polarization field. It is demonstrated the output power of near-UV LEDs is increased obviously by using SLs SRL and AlGaN barrier for the discussed emission wavelength range. Besides, the forward voltage of near-UV LEDs with InGaN/AlGaN SLs SRL is lower than that of near-UV LEDs without SRL. The carrier confinement effect and piezoelectric field-induced quantum-confined stark effect of different GaN-based near-UV LED samples from 395 nm to 410 nm emission peak wavelength were investigated theoretically and experimentally. It is found that near-UV LEDs with InGaN/AlGaN multiple quantum wells (MQWs) active region have higher output power than those with InGaN/GaN MQWs for better carrier confinement effect. However, as emission peak wavelength is longer than 406 nm, the output power of the near-UV LEDs with AlGaN barrier is lower than that of the LEDs with GaN barrier due to more serious spatial separation of electrons and holes induced by the increase of piezoelectric field. The N-doped InGaN/AlGaN superlattices (SLs) were adopted as a strain relief layer (SRL) between n-GaN and MQWs in order to suppress the polarization field. It is demonstrated the output power of near-UV LEDs is increased obviously by using SLs SRL and AlGaN barrier for the discussed emission wavelength range. Besides, the forward voltage of near-UV LEDs with InGaN/AlGaN SLs SRL is lower than that of near-UV LEDs without SRL. Light-emitting diodes (LEDs) Elsevier GaN-based Elsevier AlGaN barrier Elsevier Strain relief layer (SRL) Elsevier Yu, Tongjun oth Feng, Xiaohui oth Wang, Kun oth Zhang, Guoyi oth Enthalten in Elsevier Science, Academic Press Ma, Mengdan ELSEVIER A two-stage gap safe screening rule for multi-label optimal margin distribution machine 2022 an interdisciplinary journal on the science and technology of nanostructures Oxford [u.a.] (DE-627)ELV008997705 volume:97 year:2016 pages:417-423 extent:7 https://doi.org/10.1016/j.spmi.2016.07.001 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 50.23 Regelungstechnik Steuerungstechnik VZ 54.72 Künstliche Intelligenz VZ AR 97 2016 417-423 7 045F 530 |
allfieldsSound |
10.1016/j.spmi.2016.07.001 doi GBVA2016014000005.pica (DE-627)ELV02983855X (ELSEVIER)S0749-6036(16)30410-4 DE-627 ger DE-627 rakwb eng 530 530 DE-600 004 VZ 50.23 bkl 54.72 bkl Jia, Chuanyu verfasserin aut Performance improvement of GaN-based near-UV LEDs with InGaN/AlGaN superlattices strain relief layer and AlGaN barrier 2016transfer abstract 7 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The carrier confinement effect and piezoelectric field-induced quantum-confined stark effect of different GaN-based near-UV LED samples from 395 nm to 410 nm emission peak wavelength were investigated theoretically and experimentally. It is found that near-UV LEDs with InGaN/AlGaN multiple quantum wells (MQWs) active region have higher output power than those with InGaN/GaN MQWs for better carrier confinement effect. However, as emission peak wavelength is longer than 406 nm, the output power of the near-UV LEDs with AlGaN barrier is lower than that of the LEDs with GaN barrier due to more serious spatial separation of electrons and holes induced by the increase of piezoelectric field. The N-doped InGaN/AlGaN superlattices (SLs) were adopted as a strain relief layer (SRL) between n-GaN and MQWs in order to suppress the polarization field. It is demonstrated the output power of near-UV LEDs is increased obviously by using SLs SRL and AlGaN barrier for the discussed emission wavelength range. Besides, the forward voltage of near-UV LEDs with InGaN/AlGaN SLs SRL is lower than that of near-UV LEDs without SRL. The carrier confinement effect and piezoelectric field-induced quantum-confined stark effect of different GaN-based near-UV LED samples from 395 nm to 410 nm emission peak wavelength were investigated theoretically and experimentally. It is found that near-UV LEDs with InGaN/AlGaN multiple quantum wells (MQWs) active region have higher output power than those with InGaN/GaN MQWs for better carrier confinement effect. However, as emission peak wavelength is longer than 406 nm, the output power of the near-UV LEDs with AlGaN barrier is lower than that of the LEDs with GaN barrier due to more serious spatial separation of electrons and holes induced by the increase of piezoelectric field. The N-doped InGaN/AlGaN superlattices (SLs) were adopted as a strain relief layer (SRL) between n-GaN and MQWs in order to suppress the polarization field. It is demonstrated the output power of near-UV LEDs is increased obviously by using SLs SRL and AlGaN barrier for the discussed emission wavelength range. Besides, the forward voltage of near-UV LEDs with InGaN/AlGaN SLs SRL is lower than that of near-UV LEDs without SRL. Light-emitting diodes (LEDs) Elsevier GaN-based Elsevier AlGaN barrier Elsevier Strain relief layer (SRL) Elsevier Yu, Tongjun oth Feng, Xiaohui oth Wang, Kun oth Zhang, Guoyi oth Enthalten in Elsevier Science, Academic Press Ma, Mengdan ELSEVIER A two-stage gap safe screening rule for multi-label optimal margin distribution machine 2022 an interdisciplinary journal on the science and technology of nanostructures Oxford [u.a.] (DE-627)ELV008997705 volume:97 year:2016 pages:417-423 extent:7 https://doi.org/10.1016/j.spmi.2016.07.001 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 50.23 Regelungstechnik Steuerungstechnik VZ 54.72 Künstliche Intelligenz VZ AR 97 2016 417-423 7 045F 530 |
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Enthalten in A two-stage gap safe screening rule for multi-label optimal margin distribution machine Oxford [u.a.] volume:97 year:2016 pages:417-423 extent:7 |
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A two-stage gap safe screening rule for multi-label optimal margin distribution machine |
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performance improvement of gan-based near-uv leds with ingan/algan superlattices strain relief layer and algan barrier |
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Performance improvement of GaN-based near-UV LEDs with InGaN/AlGaN superlattices strain relief layer and AlGaN barrier |
abstract |
The carrier confinement effect and piezoelectric field-induced quantum-confined stark effect of different GaN-based near-UV LED samples from 395 nm to 410 nm emission peak wavelength were investigated theoretically and experimentally. It is found that near-UV LEDs with InGaN/AlGaN multiple quantum wells (MQWs) active region have higher output power than those with InGaN/GaN MQWs for better carrier confinement effect. However, as emission peak wavelength is longer than 406 nm, the output power of the near-UV LEDs with AlGaN barrier is lower than that of the LEDs with GaN barrier due to more serious spatial separation of electrons and holes induced by the increase of piezoelectric field. The N-doped InGaN/AlGaN superlattices (SLs) were adopted as a strain relief layer (SRL) between n-GaN and MQWs in order to suppress the polarization field. It is demonstrated the output power of near-UV LEDs is increased obviously by using SLs SRL and AlGaN barrier for the discussed emission wavelength range. Besides, the forward voltage of near-UV LEDs with InGaN/AlGaN SLs SRL is lower than that of near-UV LEDs without SRL. |
abstractGer |
The carrier confinement effect and piezoelectric field-induced quantum-confined stark effect of different GaN-based near-UV LED samples from 395 nm to 410 nm emission peak wavelength were investigated theoretically and experimentally. It is found that near-UV LEDs with InGaN/AlGaN multiple quantum wells (MQWs) active region have higher output power than those with InGaN/GaN MQWs for better carrier confinement effect. However, as emission peak wavelength is longer than 406 nm, the output power of the near-UV LEDs with AlGaN barrier is lower than that of the LEDs with GaN barrier due to more serious spatial separation of electrons and holes induced by the increase of piezoelectric field. The N-doped InGaN/AlGaN superlattices (SLs) were adopted as a strain relief layer (SRL) between n-GaN and MQWs in order to suppress the polarization field. It is demonstrated the output power of near-UV LEDs is increased obviously by using SLs SRL and AlGaN barrier for the discussed emission wavelength range. Besides, the forward voltage of near-UV LEDs with InGaN/AlGaN SLs SRL is lower than that of near-UV LEDs without SRL. |
abstract_unstemmed |
The carrier confinement effect and piezoelectric field-induced quantum-confined stark effect of different GaN-based near-UV LED samples from 395 nm to 410 nm emission peak wavelength were investigated theoretically and experimentally. It is found that near-UV LEDs with InGaN/AlGaN multiple quantum wells (MQWs) active region have higher output power than those with InGaN/GaN MQWs for better carrier confinement effect. However, as emission peak wavelength is longer than 406 nm, the output power of the near-UV LEDs with AlGaN barrier is lower than that of the LEDs with GaN barrier due to more serious spatial separation of electrons and holes induced by the increase of piezoelectric field. The N-doped InGaN/AlGaN superlattices (SLs) were adopted as a strain relief layer (SRL) between n-GaN and MQWs in order to suppress the polarization field. It is demonstrated the output power of near-UV LEDs is increased obviously by using SLs SRL and AlGaN barrier for the discussed emission wavelength range. Besides, the forward voltage of near-UV LEDs with InGaN/AlGaN SLs SRL is lower than that of near-UV LEDs without SRL. |
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title_short |
Performance improvement of GaN-based near-UV LEDs with InGaN/AlGaN superlattices strain relief layer and AlGaN barrier |
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https://doi.org/10.1016/j.spmi.2016.07.001 |
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