Performance improvement of GaN-based near-UV LEDs with InGaN/AlGaN superlattices strain relief layer and AlGaN barrier
The carrier confinement effect and piezoelectric field-induced quantum-confined stark effect of different GaN-based near-UV LED samples from 395 nm to 410 nm emission peak wavelength were investigated theoretically and experimentally. It is found that near-UV LEDs with InGaN/AlGaN multiple quantum w...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Jia, Chuanyu [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
2016transfer abstract |
|---|
| Schlagwörter: |
|---|
| Umfang: |
7 |
|---|
| Übergeordnetes Werk: |
Enthalten in: A two-stage gap safe screening rule for multi-label optimal margin distribution machine - Ma, Mengdan ELSEVIER, 2022, an interdisciplinary journal on the science and technology of nanostructures, Oxford [u.a.] |
|---|---|
| Übergeordnetes Werk: |
volume:97 ; year:2016 ; pages:417-423 ; extent:7 |
| Links: |
|---|
| DOI / URN: |
10.1016/j.spmi.2016.07.001 |
|---|
| Katalog-ID: |
ELV02983855X |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | ELV02983855X | ||
| 003 | DE-627 | ||
| 005 | 20230625175639.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 180603s2016 xx |||||o 00| ||eng c | ||
| 024 | 7 | |a 10.1016/j.spmi.2016.07.001 |2 doi | |
| 028 | 5 | 2 | |a GBVA2016014000005.pica |
| 035 | |a (DE-627)ELV02983855X | ||
| 035 | |a (ELSEVIER)S0749-6036(16)30410-4 | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 082 | 0 | |a 530 | |
| 082 | 0 | 4 | |a 530 |q DE-600 |
| 082 | 0 | 4 | |a 004 |q VZ |
| 084 | |a 50.23 |2 bkl | ||
| 084 | |a 54.72 |2 bkl | ||
| 100 | 1 | |a Jia, Chuanyu |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Performance improvement of GaN-based near-UV LEDs with InGaN/AlGaN superlattices strain relief layer and AlGaN barrier |
| 264 | 1 | |c 2016transfer abstract | |
| 300 | |a 7 | ||
| 336 | |a nicht spezifiziert |b zzz |2 rdacontent | ||
| 337 | |a nicht spezifiziert |b z |2 rdamedia | ||
| 338 | |a nicht spezifiziert |b zu |2 rdacarrier | ||
| 520 | |a The carrier confinement effect and piezoelectric field-induced quantum-confined stark effect of different GaN-based near-UV LED samples from 395 nm to 410 nm emission peak wavelength were investigated theoretically and experimentally. It is found that near-UV LEDs with InGaN/AlGaN multiple quantum wells (MQWs) active region have higher output power than those with InGaN/GaN MQWs for better carrier confinement effect. However, as emission peak wavelength is longer than 406 nm, the output power of the near-UV LEDs with AlGaN barrier is lower than that of the LEDs with GaN barrier due to more serious spatial separation of electrons and holes induced by the increase of piezoelectric field. The N-doped InGaN/AlGaN superlattices (SLs) were adopted as a strain relief layer (SRL) between n-GaN and MQWs in order to suppress the polarization field. It is demonstrated the output power of near-UV LEDs is increased obviously by using SLs SRL and AlGaN barrier for the discussed emission wavelength range. Besides, the forward voltage of near-UV LEDs with InGaN/AlGaN SLs SRL is lower than that of near-UV LEDs without SRL. | ||
| 520 | |a The carrier confinement effect and piezoelectric field-induced quantum-confined stark effect of different GaN-based near-UV LED samples from 395 nm to 410 nm emission peak wavelength were investigated theoretically and experimentally. It is found that near-UV LEDs with InGaN/AlGaN multiple quantum wells (MQWs) active region have higher output power than those with InGaN/GaN MQWs for better carrier confinement effect. However, as emission peak wavelength is longer than 406 nm, the output power of the near-UV LEDs with AlGaN barrier is lower than that of the LEDs with GaN barrier due to more serious spatial separation of electrons and holes induced by the increase of piezoelectric field. The N-doped InGaN/AlGaN superlattices (SLs) were adopted as a strain relief layer (SRL) between n-GaN and MQWs in order to suppress the polarization field. It is demonstrated the output power of near-UV LEDs is increased obviously by using SLs SRL and AlGaN barrier for the discussed emission wavelength range. Besides, the forward voltage of near-UV LEDs with InGaN/AlGaN SLs SRL is lower than that of near-UV LEDs without SRL. | ||
| 650 | 7 | |a Light-emitting diodes (LEDs) |2 Elsevier | |
| 650 | 7 | |a GaN-based |2 Elsevier | |
| 650 | 7 | |a AlGaN barrier |2 Elsevier | |
| 650 | 7 | |a Strain relief layer (SRL) |2 Elsevier | |
| 700 | 1 | |a Yu, Tongjun |4 oth | |
| 700 | 1 | |a Feng, Xiaohui |4 oth | |
| 700 | 1 | |a Wang, Kun |4 oth | |
| 700 | 1 | |a Zhang, Guoyi |4 oth | |
| 773 | 0 | 8 | |i Enthalten in |n Elsevier Science, Academic Press |a Ma, Mengdan ELSEVIER |t A two-stage gap safe screening rule for multi-label optimal margin distribution machine |d 2022 |d an interdisciplinary journal on the science and technology of nanostructures |g Oxford [u.a.] |w (DE-627)ELV008997705 |
| 773 | 1 | 8 | |g volume:97 |g year:2016 |g pages:417-423 |g extent:7 |
| 856 | 4 | 0 | |u https://doi.org/10.1016/j.spmi.2016.07.001 |3 Volltext |
| 912 | |a GBV_USEFLAG_U | ||
| 912 | |a GBV_ELV | ||
| 912 | |a SYSFLAG_U | ||
| 936 | b | k | |a 50.23 |j Regelungstechnik |j Steuerungstechnik |q VZ |
| 936 | b | k | |a 54.72 |j Künstliche Intelligenz |q VZ |
| 951 | |a AR | ||
| 952 | |d 97 |j 2016 |h 417-423 |g 7 | ||
| 953 | |2 045F |a 530 | ||
| author_variant |
c j cj |
|---|---|
| matchkey_str |
jiachuanyuyutongjunfengxiaohuiwangkunzha:2016----:efracipoeetfabsdervesihnaagnueltiesri |
| hierarchy_sort_str |
2016transfer abstract |
| bklnumber |
50.23 54.72 |
| publishDate |
2016 |
| allfields |
10.1016/j.spmi.2016.07.001 doi GBVA2016014000005.pica (DE-627)ELV02983855X (ELSEVIER)S0749-6036(16)30410-4 DE-627 ger DE-627 rakwb eng 530 530 DE-600 004 VZ 50.23 bkl 54.72 bkl Jia, Chuanyu verfasserin aut Performance improvement of GaN-based near-UV LEDs with InGaN/AlGaN superlattices strain relief layer and AlGaN barrier 2016transfer abstract 7 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The carrier confinement effect and piezoelectric field-induced quantum-confined stark effect of different GaN-based near-UV LED samples from 395 nm to 410 nm emission peak wavelength were investigated theoretically and experimentally. It is found that near-UV LEDs with InGaN/AlGaN multiple quantum wells (MQWs) active region have higher output power than those with InGaN/GaN MQWs for better carrier confinement effect. However, as emission peak wavelength is longer than 406 nm, the output power of the near-UV LEDs with AlGaN barrier is lower than that of the LEDs with GaN barrier due to more serious spatial separation of electrons and holes induced by the increase of piezoelectric field. The N-doped InGaN/AlGaN superlattices (SLs) were adopted as a strain relief layer (SRL) between n-GaN and MQWs in order to suppress the polarization field. It is demonstrated the output power of near-UV LEDs is increased obviously by using SLs SRL and AlGaN barrier for the discussed emission wavelength range. Besides, the forward voltage of near-UV LEDs with InGaN/AlGaN SLs SRL is lower than that of near-UV LEDs without SRL. The carrier confinement effect and piezoelectric field-induced quantum-confined stark effect of different GaN-based near-UV LED samples from 395 nm to 410 nm emission peak wavelength were investigated theoretically and experimentally. It is found that near-UV LEDs with InGaN/AlGaN multiple quantum wells (MQWs) active region have higher output power than those with InGaN/GaN MQWs for better carrier confinement effect. However, as emission peak wavelength is longer than 406 nm, the output power of the near-UV LEDs with AlGaN barrier is lower than that of the LEDs with GaN barrier due to more serious spatial separation of electrons and holes induced by the increase of piezoelectric field. The N-doped InGaN/AlGaN superlattices (SLs) were adopted as a strain relief layer (SRL) between n-GaN and MQWs in order to suppress the polarization field. It is demonstrated the output power of near-UV LEDs is increased obviously by using SLs SRL and AlGaN barrier for the discussed emission wavelength range. Besides, the forward voltage of near-UV LEDs with InGaN/AlGaN SLs SRL is lower than that of near-UV LEDs without SRL. Light-emitting diodes (LEDs) Elsevier GaN-based Elsevier AlGaN barrier Elsevier Strain relief layer (SRL) Elsevier Yu, Tongjun oth Feng, Xiaohui oth Wang, Kun oth Zhang, Guoyi oth Enthalten in Elsevier Science, Academic Press Ma, Mengdan ELSEVIER A two-stage gap safe screening rule for multi-label optimal margin distribution machine 2022 an interdisciplinary journal on the science and technology of nanostructures Oxford [u.a.] (DE-627)ELV008997705 volume:97 year:2016 pages:417-423 extent:7 https://doi.org/10.1016/j.spmi.2016.07.001 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 50.23 Regelungstechnik Steuerungstechnik VZ 54.72 Künstliche Intelligenz VZ AR 97 2016 417-423 7 045F 530 |
| spelling |
10.1016/j.spmi.2016.07.001 doi GBVA2016014000005.pica (DE-627)ELV02983855X (ELSEVIER)S0749-6036(16)30410-4 DE-627 ger DE-627 rakwb eng 530 530 DE-600 004 VZ 50.23 bkl 54.72 bkl Jia, Chuanyu verfasserin aut Performance improvement of GaN-based near-UV LEDs with InGaN/AlGaN superlattices strain relief layer and AlGaN barrier 2016transfer abstract 7 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The carrier confinement effect and piezoelectric field-induced quantum-confined stark effect of different GaN-based near-UV LED samples from 395 nm to 410 nm emission peak wavelength were investigated theoretically and experimentally. It is found that near-UV LEDs with InGaN/AlGaN multiple quantum wells (MQWs) active region have higher output power than those with InGaN/GaN MQWs for better carrier confinement effect. However, as emission peak wavelength is longer than 406 nm, the output power of the near-UV LEDs with AlGaN barrier is lower than that of the LEDs with GaN barrier due to more serious spatial separation of electrons and holes induced by the increase of piezoelectric field. The N-doped InGaN/AlGaN superlattices (SLs) were adopted as a strain relief layer (SRL) between n-GaN and MQWs in order to suppress the polarization field. It is demonstrated the output power of near-UV LEDs is increased obviously by using SLs SRL and AlGaN barrier for the discussed emission wavelength range. Besides, the forward voltage of near-UV LEDs with InGaN/AlGaN SLs SRL is lower than that of near-UV LEDs without SRL. The carrier confinement effect and piezoelectric field-induced quantum-confined stark effect of different GaN-based near-UV LED samples from 395 nm to 410 nm emission peak wavelength were investigated theoretically and experimentally. It is found that near-UV LEDs with InGaN/AlGaN multiple quantum wells (MQWs) active region have higher output power than those with InGaN/GaN MQWs for better carrier confinement effect. However, as emission peak wavelength is longer than 406 nm, the output power of the near-UV LEDs with AlGaN barrier is lower than that of the LEDs with GaN barrier due to more serious spatial separation of electrons and holes induced by the increase of piezoelectric field. The N-doped InGaN/AlGaN superlattices (SLs) were adopted as a strain relief layer (SRL) between n-GaN and MQWs in order to suppress the polarization field. It is demonstrated the output power of near-UV LEDs is increased obviously by using SLs SRL and AlGaN barrier for the discussed emission wavelength range. Besides, the forward voltage of near-UV LEDs with InGaN/AlGaN SLs SRL is lower than that of near-UV LEDs without SRL. Light-emitting diodes (LEDs) Elsevier GaN-based Elsevier AlGaN barrier Elsevier Strain relief layer (SRL) Elsevier Yu, Tongjun oth Feng, Xiaohui oth Wang, Kun oth Zhang, Guoyi oth Enthalten in Elsevier Science, Academic Press Ma, Mengdan ELSEVIER A two-stage gap safe screening rule for multi-label optimal margin distribution machine 2022 an interdisciplinary journal on the science and technology of nanostructures Oxford [u.a.] (DE-627)ELV008997705 volume:97 year:2016 pages:417-423 extent:7 https://doi.org/10.1016/j.spmi.2016.07.001 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 50.23 Regelungstechnik Steuerungstechnik VZ 54.72 Künstliche Intelligenz VZ AR 97 2016 417-423 7 045F 530 |
| allfields_unstemmed |
10.1016/j.spmi.2016.07.001 doi GBVA2016014000005.pica (DE-627)ELV02983855X (ELSEVIER)S0749-6036(16)30410-4 DE-627 ger DE-627 rakwb eng 530 530 DE-600 004 VZ 50.23 bkl 54.72 bkl Jia, Chuanyu verfasserin aut Performance improvement of GaN-based near-UV LEDs with InGaN/AlGaN superlattices strain relief layer and AlGaN barrier 2016transfer abstract 7 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The carrier confinement effect and piezoelectric field-induced quantum-confined stark effect of different GaN-based near-UV LED samples from 395 nm to 410 nm emission peak wavelength were investigated theoretically and experimentally. It is found that near-UV LEDs with InGaN/AlGaN multiple quantum wells (MQWs) active region have higher output power than those with InGaN/GaN MQWs for better carrier confinement effect. However, as emission peak wavelength is longer than 406 nm, the output power of the near-UV LEDs with AlGaN barrier is lower than that of the LEDs with GaN barrier due to more serious spatial separation of electrons and holes induced by the increase of piezoelectric field. The N-doped InGaN/AlGaN superlattices (SLs) were adopted as a strain relief layer (SRL) between n-GaN and MQWs in order to suppress the polarization field. It is demonstrated the output power of near-UV LEDs is increased obviously by using SLs SRL and AlGaN barrier for the discussed emission wavelength range. Besides, the forward voltage of near-UV LEDs with InGaN/AlGaN SLs SRL is lower than that of near-UV LEDs without SRL. The carrier confinement effect and piezoelectric field-induced quantum-confined stark effect of different GaN-based near-UV LED samples from 395 nm to 410 nm emission peak wavelength were investigated theoretically and experimentally. It is found that near-UV LEDs with InGaN/AlGaN multiple quantum wells (MQWs) active region have higher output power than those with InGaN/GaN MQWs for better carrier confinement effect. However, as emission peak wavelength is longer than 406 nm, the output power of the near-UV LEDs with AlGaN barrier is lower than that of the LEDs with GaN barrier due to more serious spatial separation of electrons and holes induced by the increase of piezoelectric field. The N-doped InGaN/AlGaN superlattices (SLs) were adopted as a strain relief layer (SRL) between n-GaN and MQWs in order to suppress the polarization field. It is demonstrated the output power of near-UV LEDs is increased obviously by using SLs SRL and AlGaN barrier for the discussed emission wavelength range. Besides, the forward voltage of near-UV LEDs with InGaN/AlGaN SLs SRL is lower than that of near-UV LEDs without SRL. Light-emitting diodes (LEDs) Elsevier GaN-based Elsevier AlGaN barrier Elsevier Strain relief layer (SRL) Elsevier Yu, Tongjun oth Feng, Xiaohui oth Wang, Kun oth Zhang, Guoyi oth Enthalten in Elsevier Science, Academic Press Ma, Mengdan ELSEVIER A two-stage gap safe screening rule for multi-label optimal margin distribution machine 2022 an interdisciplinary journal on the science and technology of nanostructures Oxford [u.a.] (DE-627)ELV008997705 volume:97 year:2016 pages:417-423 extent:7 https://doi.org/10.1016/j.spmi.2016.07.001 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 50.23 Regelungstechnik Steuerungstechnik VZ 54.72 Künstliche Intelligenz VZ AR 97 2016 417-423 7 045F 530 |
| allfieldsGer |
10.1016/j.spmi.2016.07.001 doi GBVA2016014000005.pica (DE-627)ELV02983855X (ELSEVIER)S0749-6036(16)30410-4 DE-627 ger DE-627 rakwb eng 530 530 DE-600 004 VZ 50.23 bkl 54.72 bkl Jia, Chuanyu verfasserin aut Performance improvement of GaN-based near-UV LEDs with InGaN/AlGaN superlattices strain relief layer and AlGaN barrier 2016transfer abstract 7 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The carrier confinement effect and piezoelectric field-induced quantum-confined stark effect of different GaN-based near-UV LED samples from 395 nm to 410 nm emission peak wavelength were investigated theoretically and experimentally. It is found that near-UV LEDs with InGaN/AlGaN multiple quantum wells (MQWs) active region have higher output power than those with InGaN/GaN MQWs for better carrier confinement effect. However, as emission peak wavelength is longer than 406 nm, the output power of the near-UV LEDs with AlGaN barrier is lower than that of the LEDs with GaN barrier due to more serious spatial separation of electrons and holes induced by the increase of piezoelectric field. The N-doped InGaN/AlGaN superlattices (SLs) were adopted as a strain relief layer (SRL) between n-GaN and MQWs in order to suppress the polarization field. It is demonstrated the output power of near-UV LEDs is increased obviously by using SLs SRL and AlGaN barrier for the discussed emission wavelength range. Besides, the forward voltage of near-UV LEDs with InGaN/AlGaN SLs SRL is lower than that of near-UV LEDs without SRL. The carrier confinement effect and piezoelectric field-induced quantum-confined stark effect of different GaN-based near-UV LED samples from 395 nm to 410 nm emission peak wavelength were investigated theoretically and experimentally. It is found that near-UV LEDs with InGaN/AlGaN multiple quantum wells (MQWs) active region have higher output power than those with InGaN/GaN MQWs for better carrier confinement effect. However, as emission peak wavelength is longer than 406 nm, the output power of the near-UV LEDs with AlGaN barrier is lower than that of the LEDs with GaN barrier due to more serious spatial separation of electrons and holes induced by the increase of piezoelectric field. The N-doped InGaN/AlGaN superlattices (SLs) were adopted as a strain relief layer (SRL) between n-GaN and MQWs in order to suppress the polarization field. It is demonstrated the output power of near-UV LEDs is increased obviously by using SLs SRL and AlGaN barrier for the discussed emission wavelength range. Besides, the forward voltage of near-UV LEDs with InGaN/AlGaN SLs SRL is lower than that of near-UV LEDs without SRL. Light-emitting diodes (LEDs) Elsevier GaN-based Elsevier AlGaN barrier Elsevier Strain relief layer (SRL) Elsevier Yu, Tongjun oth Feng, Xiaohui oth Wang, Kun oth Zhang, Guoyi oth Enthalten in Elsevier Science, Academic Press Ma, Mengdan ELSEVIER A two-stage gap safe screening rule for multi-label optimal margin distribution machine 2022 an interdisciplinary journal on the science and technology of nanostructures Oxford [u.a.] (DE-627)ELV008997705 volume:97 year:2016 pages:417-423 extent:7 https://doi.org/10.1016/j.spmi.2016.07.001 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 50.23 Regelungstechnik Steuerungstechnik VZ 54.72 Künstliche Intelligenz VZ AR 97 2016 417-423 7 045F 530 |
| allfieldsSound |
10.1016/j.spmi.2016.07.001 doi GBVA2016014000005.pica (DE-627)ELV02983855X (ELSEVIER)S0749-6036(16)30410-4 DE-627 ger DE-627 rakwb eng 530 530 DE-600 004 VZ 50.23 bkl 54.72 bkl Jia, Chuanyu verfasserin aut Performance improvement of GaN-based near-UV LEDs with InGaN/AlGaN superlattices strain relief layer and AlGaN barrier 2016transfer abstract 7 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The carrier confinement effect and piezoelectric field-induced quantum-confined stark effect of different GaN-based near-UV LED samples from 395 nm to 410 nm emission peak wavelength were investigated theoretically and experimentally. It is found that near-UV LEDs with InGaN/AlGaN multiple quantum wells (MQWs) active region have higher output power than those with InGaN/GaN MQWs for better carrier confinement effect. However, as emission peak wavelength is longer than 406 nm, the output power of the near-UV LEDs with AlGaN barrier is lower than that of the LEDs with GaN barrier due to more serious spatial separation of electrons and holes induced by the increase of piezoelectric field. The N-doped InGaN/AlGaN superlattices (SLs) were adopted as a strain relief layer (SRL) between n-GaN and MQWs in order to suppress the polarization field. It is demonstrated the output power of near-UV LEDs is increased obviously by using SLs SRL and AlGaN barrier for the discussed emission wavelength range. Besides, the forward voltage of near-UV LEDs with InGaN/AlGaN SLs SRL is lower than that of near-UV LEDs without SRL. The carrier confinement effect and piezoelectric field-induced quantum-confined stark effect of different GaN-based near-UV LED samples from 395 nm to 410 nm emission peak wavelength were investigated theoretically and experimentally. It is found that near-UV LEDs with InGaN/AlGaN multiple quantum wells (MQWs) active region have higher output power than those with InGaN/GaN MQWs for better carrier confinement effect. However, as emission peak wavelength is longer than 406 nm, the output power of the near-UV LEDs with AlGaN barrier is lower than that of the LEDs with GaN barrier due to more serious spatial separation of electrons and holes induced by the increase of piezoelectric field. The N-doped InGaN/AlGaN superlattices (SLs) were adopted as a strain relief layer (SRL) between n-GaN and MQWs in order to suppress the polarization field. It is demonstrated the output power of near-UV LEDs is increased obviously by using SLs SRL and AlGaN barrier for the discussed emission wavelength range. Besides, the forward voltage of near-UV LEDs with InGaN/AlGaN SLs SRL is lower than that of near-UV LEDs without SRL. Light-emitting diodes (LEDs) Elsevier GaN-based Elsevier AlGaN barrier Elsevier Strain relief layer (SRL) Elsevier Yu, Tongjun oth Feng, Xiaohui oth Wang, Kun oth Zhang, Guoyi oth Enthalten in Elsevier Science, Academic Press Ma, Mengdan ELSEVIER A two-stage gap safe screening rule for multi-label optimal margin distribution machine 2022 an interdisciplinary journal on the science and technology of nanostructures Oxford [u.a.] (DE-627)ELV008997705 volume:97 year:2016 pages:417-423 extent:7 https://doi.org/10.1016/j.spmi.2016.07.001 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 50.23 Regelungstechnik Steuerungstechnik VZ 54.72 Künstliche Intelligenz VZ AR 97 2016 417-423 7 045F 530 |
| language |
English |
| source |
Enthalten in A two-stage gap safe screening rule for multi-label optimal margin distribution machine Oxford [u.a.] volume:97 year:2016 pages:417-423 extent:7 |
| sourceStr |
Enthalten in A two-stage gap safe screening rule for multi-label optimal margin distribution machine Oxford [u.a.] volume:97 year:2016 pages:417-423 extent:7 |
| format_phy_str_mv |
Article |
| bklname |
Regelungstechnik Steuerungstechnik Künstliche Intelligenz |
| institution |
findex.gbv.de |
| topic_facet |
Light-emitting diodes (LEDs) GaN-based AlGaN barrier Strain relief layer (SRL) |
| dewey-raw |
530 |
| isfreeaccess_bool |
false |
| container_title |
A two-stage gap safe screening rule for multi-label optimal margin distribution machine |
| authorswithroles_txt_mv |
Jia, Chuanyu @@aut@@ Yu, Tongjun @@oth@@ Feng, Xiaohui @@oth@@ Wang, Kun @@oth@@ Zhang, Guoyi @@oth@@ |
| publishDateDaySort_date |
2016-01-01T00:00:00Z |
| hierarchy_top_id |
ELV008997705 |
| dewey-sort |
3530 |
| id |
ELV02983855X |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV02983855X</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230625175639.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">180603s2016 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.spmi.2016.07.001</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">GBVA2016014000005.pica</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV02983855X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S0749-6036(16)30410-4</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">530</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="q">DE-600</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">004</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">50.23</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">54.72</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Jia, Chuanyu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Performance improvement of GaN-based near-UV LEDs with InGaN/AlGaN superlattices strain relief layer and AlGaN barrier</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2016transfer abstract</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">7</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">The carrier confinement effect and piezoelectric field-induced quantum-confined stark effect of different GaN-based near-UV LED samples from 395 nm to 410 nm emission peak wavelength were investigated theoretically and experimentally. It is found that near-UV LEDs with InGaN/AlGaN multiple quantum wells (MQWs) active region have higher output power than those with InGaN/GaN MQWs for better carrier confinement effect. However, as emission peak wavelength is longer than 406 nm, the output power of the near-UV LEDs with AlGaN barrier is lower than that of the LEDs with GaN barrier due to more serious spatial separation of electrons and holes induced by the increase of piezoelectric field. The N-doped InGaN/AlGaN superlattices (SLs) were adopted as a strain relief layer (SRL) between n-GaN and MQWs in order to suppress the polarization field. It is demonstrated the output power of near-UV LEDs is increased obviously by using SLs SRL and AlGaN barrier for the discussed emission wavelength range. Besides, the forward voltage of near-UV LEDs with InGaN/AlGaN SLs SRL is lower than that of near-UV LEDs without SRL.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">The carrier confinement effect and piezoelectric field-induced quantum-confined stark effect of different GaN-based near-UV LED samples from 395 nm to 410 nm emission peak wavelength were investigated theoretically and experimentally. It is found that near-UV LEDs with InGaN/AlGaN multiple quantum wells (MQWs) active region have higher output power than those with InGaN/GaN MQWs for better carrier confinement effect. However, as emission peak wavelength is longer than 406 nm, the output power of the near-UV LEDs with AlGaN barrier is lower than that of the LEDs with GaN barrier due to more serious spatial separation of electrons and holes induced by the increase of piezoelectric field. The N-doped InGaN/AlGaN superlattices (SLs) were adopted as a strain relief layer (SRL) between n-GaN and MQWs in order to suppress the polarization field. It is demonstrated the output power of near-UV LEDs is increased obviously by using SLs SRL and AlGaN barrier for the discussed emission wavelength range. Besides, the forward voltage of near-UV LEDs with InGaN/AlGaN SLs SRL is lower than that of near-UV LEDs without SRL.</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Light-emitting diodes (LEDs)</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">GaN-based</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">AlGaN barrier</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Strain relief layer (SRL)</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Yu, Tongjun</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Feng, Xiaohui</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wang, Kun</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zhang, Guoyi</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="n">Elsevier Science, Academic Press</subfield><subfield code="a">Ma, Mengdan ELSEVIER</subfield><subfield code="t">A two-stage gap safe screening rule for multi-label optimal margin distribution machine</subfield><subfield code="d">2022</subfield><subfield code="d">an interdisciplinary journal on the science and technology of nanostructures</subfield><subfield code="g">Oxford [u.a.]</subfield><subfield code="w">(DE-627)ELV008997705</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:97</subfield><subfield code="g">year:2016</subfield><subfield code="g">pages:417-423</subfield><subfield code="g">extent:7</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1016/j.spmi.2016.07.001</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">50.23</subfield><subfield code="j">Regelungstechnik</subfield><subfield code="j">Steuerungstechnik</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">54.72</subfield><subfield code="j">Künstliche Intelligenz</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">97</subfield><subfield code="j">2016</subfield><subfield code="h">417-423</subfield><subfield code="g">7</subfield></datafield><datafield tag="953" ind1=" " ind2=" "><subfield code="2">045F</subfield><subfield code="a">530</subfield></datafield></record></collection>
|
| author |
Jia, Chuanyu |
| spellingShingle |
Jia, Chuanyu ddc 530 ddc 004 bkl 50.23 bkl 54.72 Elsevier Light-emitting diodes (LEDs) Elsevier GaN-based Elsevier AlGaN barrier Elsevier Strain relief layer (SRL) Performance improvement of GaN-based near-UV LEDs with InGaN/AlGaN superlattices strain relief layer and AlGaN barrier |
| authorStr |
Jia, Chuanyu |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)ELV008997705 |
| format |
electronic Article |
| dewey-ones |
530 - Physics 004 - Data processing & computer science |
| delete_txt_mv |
keep |
| author_role |
aut |
| collection |
elsevier |
| remote_str |
true |
| illustrated |
Not Illustrated |
| topic_title |
530 530 DE-600 004 VZ 50.23 bkl 54.72 bkl Performance improvement of GaN-based near-UV LEDs with InGaN/AlGaN superlattices strain relief layer and AlGaN barrier Light-emitting diodes (LEDs) Elsevier GaN-based Elsevier AlGaN barrier Elsevier Strain relief layer (SRL) Elsevier |
| topic |
ddc 530 ddc 004 bkl 50.23 bkl 54.72 Elsevier Light-emitting diodes (LEDs) Elsevier GaN-based Elsevier AlGaN barrier Elsevier Strain relief layer (SRL) |
| topic_unstemmed |
ddc 530 ddc 004 bkl 50.23 bkl 54.72 Elsevier Light-emitting diodes (LEDs) Elsevier GaN-based Elsevier AlGaN barrier Elsevier Strain relief layer (SRL) |
| topic_browse |
ddc 530 ddc 004 bkl 50.23 bkl 54.72 Elsevier Light-emitting diodes (LEDs) Elsevier GaN-based Elsevier AlGaN barrier Elsevier Strain relief layer (SRL) |
| format_facet |
Elektronische Aufsätze Aufsätze Elektronische Ressource |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
zu |
| author2_variant |
t y ty x f xf k w kw g z gz |
| hierarchy_parent_title |
A two-stage gap safe screening rule for multi-label optimal margin distribution machine |
| hierarchy_parent_id |
ELV008997705 |
| dewey-tens |
530 - Physics 000 - Computer science, knowledge & systems |
| hierarchy_top_title |
A two-stage gap safe screening rule for multi-label optimal margin distribution machine |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)ELV008997705 |
| title |
Performance improvement of GaN-based near-UV LEDs with InGaN/AlGaN superlattices strain relief layer and AlGaN barrier |
| ctrlnum |
(DE-627)ELV02983855X (ELSEVIER)S0749-6036(16)30410-4 |
| title_full |
Performance improvement of GaN-based near-UV LEDs with InGaN/AlGaN superlattices strain relief layer and AlGaN barrier |
| author_sort |
Jia, Chuanyu |
| journal |
A two-stage gap safe screening rule for multi-label optimal margin distribution machine |
| journalStr |
A two-stage gap safe screening rule for multi-label optimal margin distribution machine |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
500 - Science 000 - Computer science, information & general works |
| recordtype |
marc |
| publishDateSort |
2016 |
| contenttype_str_mv |
zzz |
| container_start_page |
417 |
| author_browse |
Jia, Chuanyu |
| container_volume |
97 |
| physical |
7 |
| class |
530 530 DE-600 004 VZ 50.23 bkl 54.72 bkl |
| format_se |
Elektronische Aufsätze |
| author-letter |
Jia, Chuanyu |
| doi_str_mv |
10.1016/j.spmi.2016.07.001 |
| dewey-full |
530 004 |
| title_sort |
performance improvement of gan-based near-uv leds with ingan/algan superlattices strain relief layer and algan barrier |
| title_auth |
Performance improvement of GaN-based near-UV LEDs with InGaN/AlGaN superlattices strain relief layer and AlGaN barrier |
| abstract |
The carrier confinement effect and piezoelectric field-induced quantum-confined stark effect of different GaN-based near-UV LED samples from 395 nm to 410 nm emission peak wavelength were investigated theoretically and experimentally. It is found that near-UV LEDs with InGaN/AlGaN multiple quantum wells (MQWs) active region have higher output power than those with InGaN/GaN MQWs for better carrier confinement effect. However, as emission peak wavelength is longer than 406 nm, the output power of the near-UV LEDs with AlGaN barrier is lower than that of the LEDs with GaN barrier due to more serious spatial separation of electrons and holes induced by the increase of piezoelectric field. The N-doped InGaN/AlGaN superlattices (SLs) were adopted as a strain relief layer (SRL) between n-GaN and MQWs in order to suppress the polarization field. It is demonstrated the output power of near-UV LEDs is increased obviously by using SLs SRL and AlGaN barrier for the discussed emission wavelength range. Besides, the forward voltage of near-UV LEDs with InGaN/AlGaN SLs SRL is lower than that of near-UV LEDs without SRL. |
| abstractGer |
The carrier confinement effect and piezoelectric field-induced quantum-confined stark effect of different GaN-based near-UV LED samples from 395 nm to 410 nm emission peak wavelength were investigated theoretically and experimentally. It is found that near-UV LEDs with InGaN/AlGaN multiple quantum wells (MQWs) active region have higher output power than those with InGaN/GaN MQWs for better carrier confinement effect. However, as emission peak wavelength is longer than 406 nm, the output power of the near-UV LEDs with AlGaN barrier is lower than that of the LEDs with GaN barrier due to more serious spatial separation of electrons and holes induced by the increase of piezoelectric field. The N-doped InGaN/AlGaN superlattices (SLs) were adopted as a strain relief layer (SRL) between n-GaN and MQWs in order to suppress the polarization field. It is demonstrated the output power of near-UV LEDs is increased obviously by using SLs SRL and AlGaN barrier for the discussed emission wavelength range. Besides, the forward voltage of near-UV LEDs with InGaN/AlGaN SLs SRL is lower than that of near-UV LEDs without SRL. |
| abstract_unstemmed |
The carrier confinement effect and piezoelectric field-induced quantum-confined stark effect of different GaN-based near-UV LED samples from 395 nm to 410 nm emission peak wavelength were investigated theoretically and experimentally. It is found that near-UV LEDs with InGaN/AlGaN multiple quantum wells (MQWs) active region have higher output power than those with InGaN/GaN MQWs for better carrier confinement effect. However, as emission peak wavelength is longer than 406 nm, the output power of the near-UV LEDs with AlGaN barrier is lower than that of the LEDs with GaN barrier due to more serious spatial separation of electrons and holes induced by the increase of piezoelectric field. The N-doped InGaN/AlGaN superlattices (SLs) were adopted as a strain relief layer (SRL) between n-GaN and MQWs in order to suppress the polarization field. It is demonstrated the output power of near-UV LEDs is increased obviously by using SLs SRL and AlGaN barrier for the discussed emission wavelength range. Besides, the forward voltage of near-UV LEDs with InGaN/AlGaN SLs SRL is lower than that of near-UV LEDs without SRL. |
| collection_details |
GBV_USEFLAG_U GBV_ELV SYSFLAG_U |
| title_short |
Performance improvement of GaN-based near-UV LEDs with InGaN/AlGaN superlattices strain relief layer and AlGaN barrier |
| url |
https://doi.org/10.1016/j.spmi.2016.07.001 |
| remote_bool |
true |
| author2 |
Yu, Tongjun Feng, Xiaohui Wang, Kun Zhang, Guoyi |
| author2Str |
Yu, Tongjun Feng, Xiaohui Wang, Kun Zhang, Guoyi |
| ppnlink |
ELV008997705 |
| mediatype_str_mv |
z |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| author2_role |
oth oth oth oth |
| doi_str |
10.1016/j.spmi.2016.07.001 |
| up_date |
2024-07-06T22:30:27.991Z |
| _version_ |
1803870565030690816 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV02983855X</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230625175639.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">180603s2016 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.spmi.2016.07.001</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">GBVA2016014000005.pica</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV02983855X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S0749-6036(16)30410-4</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">530</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="q">DE-600</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">004</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">50.23</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">54.72</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Jia, Chuanyu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Performance improvement of GaN-based near-UV LEDs with InGaN/AlGaN superlattices strain relief layer and AlGaN barrier</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2016transfer abstract</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">7</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">The carrier confinement effect and piezoelectric field-induced quantum-confined stark effect of different GaN-based near-UV LED samples from 395 nm to 410 nm emission peak wavelength were investigated theoretically and experimentally. It is found that near-UV LEDs with InGaN/AlGaN multiple quantum wells (MQWs) active region have higher output power than those with InGaN/GaN MQWs for better carrier confinement effect. However, as emission peak wavelength is longer than 406 nm, the output power of the near-UV LEDs with AlGaN barrier is lower than that of the LEDs with GaN barrier due to more serious spatial separation of electrons and holes induced by the increase of piezoelectric field. The N-doped InGaN/AlGaN superlattices (SLs) were adopted as a strain relief layer (SRL) between n-GaN and MQWs in order to suppress the polarization field. It is demonstrated the output power of near-UV LEDs is increased obviously by using SLs SRL and AlGaN barrier for the discussed emission wavelength range. Besides, the forward voltage of near-UV LEDs with InGaN/AlGaN SLs SRL is lower than that of near-UV LEDs without SRL.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">The carrier confinement effect and piezoelectric field-induced quantum-confined stark effect of different GaN-based near-UV LED samples from 395 nm to 410 nm emission peak wavelength were investigated theoretically and experimentally. It is found that near-UV LEDs with InGaN/AlGaN multiple quantum wells (MQWs) active region have higher output power than those with InGaN/GaN MQWs for better carrier confinement effect. However, as emission peak wavelength is longer than 406 nm, the output power of the near-UV LEDs with AlGaN barrier is lower than that of the LEDs with GaN barrier due to more serious spatial separation of electrons and holes induced by the increase of piezoelectric field. The N-doped InGaN/AlGaN superlattices (SLs) were adopted as a strain relief layer (SRL) between n-GaN and MQWs in order to suppress the polarization field. It is demonstrated the output power of near-UV LEDs is increased obviously by using SLs SRL and AlGaN barrier for the discussed emission wavelength range. Besides, the forward voltage of near-UV LEDs with InGaN/AlGaN SLs SRL is lower than that of near-UV LEDs without SRL.</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Light-emitting diodes (LEDs)</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">GaN-based</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">AlGaN barrier</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Strain relief layer (SRL)</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Yu, Tongjun</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Feng, Xiaohui</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wang, Kun</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zhang, Guoyi</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="n">Elsevier Science, Academic Press</subfield><subfield code="a">Ma, Mengdan ELSEVIER</subfield><subfield code="t">A two-stage gap safe screening rule for multi-label optimal margin distribution machine</subfield><subfield code="d">2022</subfield><subfield code="d">an interdisciplinary journal on the science and technology of nanostructures</subfield><subfield code="g">Oxford [u.a.]</subfield><subfield code="w">(DE-627)ELV008997705</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:97</subfield><subfield code="g">year:2016</subfield><subfield code="g">pages:417-423</subfield><subfield code="g">extent:7</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1016/j.spmi.2016.07.001</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">50.23</subfield><subfield code="j">Regelungstechnik</subfield><subfield code="j">Steuerungstechnik</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">54.72</subfield><subfield code="j">Künstliche Intelligenz</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">97</subfield><subfield code="j">2016</subfield><subfield code="h">417-423</subfield><subfield code="g">7</subfield></datafield><datafield tag="953" ind1=" " ind2=" "><subfield code="2">045F</subfield><subfield code="a">530</subfield></datafield></record></collection>
|
| score |
7.4003572 |