Energy band diagram and energy band offsets of Ga0.6Al0.4As0.034Sb0.966(p)/Ga0.6Al0.4As0.034Sb0.966(n)/InAs0.9Sb0.1 double interface determined by capacitance-voltage measurements
In this work, we report on the determination of band discontinuities and energy band diagram of the Ga0.6Al0.4As0.034Sb0.966(p)/Ga0.6Al0.4As0.034Sb0.966(n)/InAs0.9Sb0.1 double interface at equilibrium and room temperature, by capacitance-voltage measurements (C-V). Mesa diodes, with three different...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Cheriet, A. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2017transfer abstract |
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| Umfang: |
6 |
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| Übergeordnetes Werk: |
Enthalten in: Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate - Narattha, Chalermphan ELSEVIER, 2022, Amsterdam [u.a.] |
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| Übergeordnetes Werk: |
volume:66 ; year:2017 ; day:1 ; month:08 ; pages:50-55 ; extent:6 |
| Links: |
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| DOI / URN: |
10.1016/j.mssp.2017.02.034 |
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ELV030244897 |
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| 245 | 1 | 0 | |a Energy band diagram and energy band offsets of Ga0.6Al0.4As0.034Sb0.966(p)/Ga0.6Al0.4As0.034Sb0.966(n)/InAs0.9Sb0.1 double interface determined by capacitance-voltage measurements |
| 264 | 1 | |c 2017transfer abstract | |
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| 520 | |a In this work, we report on the determination of band discontinuities and energy band diagram of the Ga0.6Al0.4As0.034Sb0.966(p)/Ga0.6Al0.4As0.034Sb0.966(n)/InAs0.9Sb0.1 double interface at equilibrium and room temperature, by capacitance-voltage measurements (C-V). Mesa diodes, with three different diameters are characterized and physical quantities like doping concentration in the unintentionally doped (n.i.d) InAsSb material and diffusion potentials at interfaces are extracted from C-V data. Finally, the energy band diagram of the structure is drawn and experimental values of energy band offsets are deduced and compared to those obtained by a numerical simulation. | ||
| 520 | |a In this work, we report on the determination of band discontinuities and energy band diagram of the Ga0.6Al0.4As0.034Sb0.966(p)/Ga0.6Al0.4As0.034Sb0.966(n)/InAs0.9Sb0.1 double interface at equilibrium and room temperature, by capacitance-voltage measurements (C-V). Mesa diodes, with three different diameters are characterized and physical quantities like doping concentration in the unintentionally doped (n.i.d) InAsSb material and diffusion potentials at interfaces are extracted from C-V data. Finally, the energy band diagram of the structure is drawn and experimental values of energy band offsets are deduced and compared to those obtained by a numerical simulation. | ||
| 650 | 7 | |a InAsSb |2 Elsevier | |
| 650 | 7 | |a GaAlAsSb |2 Elsevier | |
| 650 | 7 | |a Diffusion potential |2 Elsevier | |
| 650 | 7 | |a Band offsets |2 Elsevier | |
| 650 | 7 | |a Capacitance-voltage measurements |2 Elsevier | |
| 700 | 1 | |a Mebarki, M. |4 oth | |
| 700 | 1 | |a Christol, P. |4 oth | |
| 700 | 1 | |a Aït-kaci, H. |4 oth | |
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10.1016/j.mssp.2017.02.034 doi GBVA2017002000024.pica (DE-627)ELV030244897 (ELSEVIER)S1369-8001(16)30286-4 DE-627 ger DE-627 rakwb eng 530 620 530 DE-600 620 DE-600 690 VZ 56.45 bkl Cheriet, A. verfasserin aut Energy band diagram and energy band offsets of Ga0.6Al0.4As0.034Sb0.966(p)/Ga0.6Al0.4As0.034Sb0.966(n)/InAs0.9Sb0.1 double interface determined by capacitance-voltage measurements 2017transfer abstract 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier In this work, we report on the determination of band discontinuities and energy band diagram of the Ga0.6Al0.4As0.034Sb0.966(p)/Ga0.6Al0.4As0.034Sb0.966(n)/InAs0.9Sb0.1 double interface at equilibrium and room temperature, by capacitance-voltage measurements (C-V). Mesa diodes, with three different diameters are characterized and physical quantities like doping concentration in the unintentionally doped (n.i.d) InAsSb material and diffusion potentials at interfaces are extracted from C-V data. Finally, the energy band diagram of the structure is drawn and experimental values of energy band offsets are deduced and compared to those obtained by a numerical simulation. In this work, we report on the determination of band discontinuities and energy band diagram of the Ga0.6Al0.4As0.034Sb0.966(p)/Ga0.6Al0.4As0.034Sb0.966(n)/InAs0.9Sb0.1 double interface at equilibrium and room temperature, by capacitance-voltage measurements (C-V). Mesa diodes, with three different diameters are characterized and physical quantities like doping concentration in the unintentionally doped (n.i.d) InAsSb material and diffusion potentials at interfaces are extracted from C-V data. Finally, the energy band diagram of the structure is drawn and experimental values of energy band offsets are deduced and compared to those obtained by a numerical simulation. InAsSb Elsevier GaAlAsSb Elsevier Diffusion potential Elsevier Band offsets Elsevier Capacitance-voltage measurements Elsevier Mebarki, M. oth Christol, P. oth Aït-kaci, H. oth Enthalten in Elsevier Science Narattha, Chalermphan ELSEVIER Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate 2022 Amsterdam [u.a.] (DE-627)ELV007709056 volume:66 year:2017 day:1 month:08 pages:50-55 extent:6 https://doi.org/10.1016/j.mssp.2017.02.034 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.45 Baustoffkunde VZ AR 66 2017 1 0801 50-55 6 045F 530 |
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10.1016/j.mssp.2017.02.034 doi GBVA2017002000024.pica (DE-627)ELV030244897 (ELSEVIER)S1369-8001(16)30286-4 DE-627 ger DE-627 rakwb eng 530 620 530 DE-600 620 DE-600 690 VZ 56.45 bkl Cheriet, A. verfasserin aut Energy band diagram and energy band offsets of Ga0.6Al0.4As0.034Sb0.966(p)/Ga0.6Al0.4As0.034Sb0.966(n)/InAs0.9Sb0.1 double interface determined by capacitance-voltage measurements 2017transfer abstract 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier In this work, we report on the determination of band discontinuities and energy band diagram of the Ga0.6Al0.4As0.034Sb0.966(p)/Ga0.6Al0.4As0.034Sb0.966(n)/InAs0.9Sb0.1 double interface at equilibrium and room temperature, by capacitance-voltage measurements (C-V). Mesa diodes, with three different diameters are characterized and physical quantities like doping concentration in the unintentionally doped (n.i.d) InAsSb material and diffusion potentials at interfaces are extracted from C-V data. Finally, the energy band diagram of the structure is drawn and experimental values of energy band offsets are deduced and compared to those obtained by a numerical simulation. In this work, we report on the determination of band discontinuities and energy band diagram of the Ga0.6Al0.4As0.034Sb0.966(p)/Ga0.6Al0.4As0.034Sb0.966(n)/InAs0.9Sb0.1 double interface at equilibrium and room temperature, by capacitance-voltage measurements (C-V). Mesa diodes, with three different diameters are characterized and physical quantities like doping concentration in the unintentionally doped (n.i.d) InAsSb material and diffusion potentials at interfaces are extracted from C-V data. Finally, the energy band diagram of the structure is drawn and experimental values of energy band offsets are deduced and compared to those obtained by a numerical simulation. InAsSb Elsevier GaAlAsSb Elsevier Diffusion potential Elsevier Band offsets Elsevier Capacitance-voltage measurements Elsevier Mebarki, M. oth Christol, P. oth Aït-kaci, H. oth Enthalten in Elsevier Science Narattha, Chalermphan ELSEVIER Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate 2022 Amsterdam [u.a.] (DE-627)ELV007709056 volume:66 year:2017 day:1 month:08 pages:50-55 extent:6 https://doi.org/10.1016/j.mssp.2017.02.034 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.45 Baustoffkunde VZ AR 66 2017 1 0801 50-55 6 045F 530 |
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10.1016/j.mssp.2017.02.034 doi GBVA2017002000024.pica (DE-627)ELV030244897 (ELSEVIER)S1369-8001(16)30286-4 DE-627 ger DE-627 rakwb eng 530 620 530 DE-600 620 DE-600 690 VZ 56.45 bkl Cheriet, A. verfasserin aut Energy band diagram and energy band offsets of Ga0.6Al0.4As0.034Sb0.966(p)/Ga0.6Al0.4As0.034Sb0.966(n)/InAs0.9Sb0.1 double interface determined by capacitance-voltage measurements 2017transfer abstract 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier In this work, we report on the determination of band discontinuities and energy band diagram of the Ga0.6Al0.4As0.034Sb0.966(p)/Ga0.6Al0.4As0.034Sb0.966(n)/InAs0.9Sb0.1 double interface at equilibrium and room temperature, by capacitance-voltage measurements (C-V). Mesa diodes, with three different diameters are characterized and physical quantities like doping concentration in the unintentionally doped (n.i.d) InAsSb material and diffusion potentials at interfaces are extracted from C-V data. Finally, the energy band diagram of the structure is drawn and experimental values of energy band offsets are deduced and compared to those obtained by a numerical simulation. In this work, we report on the determination of band discontinuities and energy band diagram of the Ga0.6Al0.4As0.034Sb0.966(p)/Ga0.6Al0.4As0.034Sb0.966(n)/InAs0.9Sb0.1 double interface at equilibrium and room temperature, by capacitance-voltage measurements (C-V). Mesa diodes, with three different diameters are characterized and physical quantities like doping concentration in the unintentionally doped (n.i.d) InAsSb material and diffusion potentials at interfaces are extracted from C-V data. Finally, the energy band diagram of the structure is drawn and experimental values of energy band offsets are deduced and compared to those obtained by a numerical simulation. InAsSb Elsevier GaAlAsSb Elsevier Diffusion potential Elsevier Band offsets Elsevier Capacitance-voltage measurements Elsevier Mebarki, M. oth Christol, P. oth Aït-kaci, H. oth Enthalten in Elsevier Science Narattha, Chalermphan ELSEVIER Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate 2022 Amsterdam [u.a.] (DE-627)ELV007709056 volume:66 year:2017 day:1 month:08 pages:50-55 extent:6 https://doi.org/10.1016/j.mssp.2017.02.034 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.45 Baustoffkunde VZ AR 66 2017 1 0801 50-55 6 045F 530 |
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10.1016/j.mssp.2017.02.034 doi GBVA2017002000024.pica (DE-627)ELV030244897 (ELSEVIER)S1369-8001(16)30286-4 DE-627 ger DE-627 rakwb eng 530 620 530 DE-600 620 DE-600 690 VZ 56.45 bkl Cheriet, A. verfasserin aut Energy band diagram and energy band offsets of Ga0.6Al0.4As0.034Sb0.966(p)/Ga0.6Al0.4As0.034Sb0.966(n)/InAs0.9Sb0.1 double interface determined by capacitance-voltage measurements 2017transfer abstract 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier In this work, we report on the determination of band discontinuities and energy band diagram of the Ga0.6Al0.4As0.034Sb0.966(p)/Ga0.6Al0.4As0.034Sb0.966(n)/InAs0.9Sb0.1 double interface at equilibrium and room temperature, by capacitance-voltage measurements (C-V). Mesa diodes, with three different diameters are characterized and physical quantities like doping concentration in the unintentionally doped (n.i.d) InAsSb material and diffusion potentials at interfaces are extracted from C-V data. Finally, the energy band diagram of the structure is drawn and experimental values of energy band offsets are deduced and compared to those obtained by a numerical simulation. In this work, we report on the determination of band discontinuities and energy band diagram of the Ga0.6Al0.4As0.034Sb0.966(p)/Ga0.6Al0.4As0.034Sb0.966(n)/InAs0.9Sb0.1 double interface at equilibrium and room temperature, by capacitance-voltage measurements (C-V). Mesa diodes, with three different diameters are characterized and physical quantities like doping concentration in the unintentionally doped (n.i.d) InAsSb material and diffusion potentials at interfaces are extracted from C-V data. Finally, the energy band diagram of the structure is drawn and experimental values of energy band offsets are deduced and compared to those obtained by a numerical simulation. InAsSb Elsevier GaAlAsSb Elsevier Diffusion potential Elsevier Band offsets Elsevier Capacitance-voltage measurements Elsevier Mebarki, M. oth Christol, P. oth Aït-kaci, H. oth Enthalten in Elsevier Science Narattha, Chalermphan ELSEVIER Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate 2022 Amsterdam [u.a.] (DE-627)ELV007709056 volume:66 year:2017 day:1 month:08 pages:50-55 extent:6 https://doi.org/10.1016/j.mssp.2017.02.034 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.45 Baustoffkunde VZ AR 66 2017 1 0801 50-55 6 045F 530 |
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10.1016/j.mssp.2017.02.034 doi GBVA2017002000024.pica (DE-627)ELV030244897 (ELSEVIER)S1369-8001(16)30286-4 DE-627 ger DE-627 rakwb eng 530 620 530 DE-600 620 DE-600 690 VZ 56.45 bkl Cheriet, A. verfasserin aut Energy band diagram and energy band offsets of Ga0.6Al0.4As0.034Sb0.966(p)/Ga0.6Al0.4As0.034Sb0.966(n)/InAs0.9Sb0.1 double interface determined by capacitance-voltage measurements 2017transfer abstract 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier In this work, we report on the determination of band discontinuities and energy band diagram of the Ga0.6Al0.4As0.034Sb0.966(p)/Ga0.6Al0.4As0.034Sb0.966(n)/InAs0.9Sb0.1 double interface at equilibrium and room temperature, by capacitance-voltage measurements (C-V). Mesa diodes, with three different diameters are characterized and physical quantities like doping concentration in the unintentionally doped (n.i.d) InAsSb material and diffusion potentials at interfaces are extracted from C-V data. Finally, the energy band diagram of the structure is drawn and experimental values of energy band offsets are deduced and compared to those obtained by a numerical simulation. In this work, we report on the determination of band discontinuities and energy band diagram of the Ga0.6Al0.4As0.034Sb0.966(p)/Ga0.6Al0.4As0.034Sb0.966(n)/InAs0.9Sb0.1 double interface at equilibrium and room temperature, by capacitance-voltage measurements (C-V). Mesa diodes, with three different diameters are characterized and physical quantities like doping concentration in the unintentionally doped (n.i.d) InAsSb material and diffusion potentials at interfaces are extracted from C-V data. Finally, the energy band diagram of the structure is drawn and experimental values of energy band offsets are deduced and compared to those obtained by a numerical simulation. InAsSb Elsevier GaAlAsSb Elsevier Diffusion potential Elsevier Band offsets Elsevier Capacitance-voltage measurements Elsevier Mebarki, M. oth Christol, P. oth Aït-kaci, H. oth Enthalten in Elsevier Science Narattha, Chalermphan ELSEVIER Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate 2022 Amsterdam [u.a.] (DE-627)ELV007709056 volume:66 year:2017 day:1 month:08 pages:50-55 extent:6 https://doi.org/10.1016/j.mssp.2017.02.034 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.45 Baustoffkunde VZ AR 66 2017 1 0801 50-55 6 045F 530 |
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Energy band diagram and energy band offsets of Ga0.6Al0.4As0.034Sb0.966(p)/Ga0.6Al0.4As0.034Sb0.966(n)/InAs0.9Sb0.1 double interface determined by capacitance-voltage measurements |
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Energy band diagram and energy band offsets of Ga0.6Al0.4As0.034Sb0.966(p)/Ga0.6Al0.4As0.034Sb0.966(n)/InAs0.9Sb0.1 double interface determined by capacitance-voltage measurements |
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Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate |
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Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate |
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energy band diagram and energy band offsets of ga0.6al0.4as0.034sb0.966(p)/ga0.6al0.4as0.034sb0.966(n)/inas0.9sb0.1 double interface determined by capacitance-voltage measurements |
| title_auth |
Energy band diagram and energy band offsets of Ga0.6Al0.4As0.034Sb0.966(p)/Ga0.6Al0.4As0.034Sb0.966(n)/InAs0.9Sb0.1 double interface determined by capacitance-voltage measurements |
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In this work, we report on the determination of band discontinuities and energy band diagram of the Ga0.6Al0.4As0.034Sb0.966(p)/Ga0.6Al0.4As0.034Sb0.966(n)/InAs0.9Sb0.1 double interface at equilibrium and room temperature, by capacitance-voltage measurements (C-V). Mesa diodes, with three different diameters are characterized and physical quantities like doping concentration in the unintentionally doped (n.i.d) InAsSb material and diffusion potentials at interfaces are extracted from C-V data. Finally, the energy band diagram of the structure is drawn and experimental values of energy band offsets are deduced and compared to those obtained by a numerical simulation. |
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In this work, we report on the determination of band discontinuities and energy band diagram of the Ga0.6Al0.4As0.034Sb0.966(p)/Ga0.6Al0.4As0.034Sb0.966(n)/InAs0.9Sb0.1 double interface at equilibrium and room temperature, by capacitance-voltage measurements (C-V). Mesa diodes, with three different diameters are characterized and physical quantities like doping concentration in the unintentionally doped (n.i.d) InAsSb material and diffusion potentials at interfaces are extracted from C-V data. Finally, the energy band diagram of the structure is drawn and experimental values of energy band offsets are deduced and compared to those obtained by a numerical simulation. |
| abstract_unstemmed |
In this work, we report on the determination of band discontinuities and energy band diagram of the Ga0.6Al0.4As0.034Sb0.966(p)/Ga0.6Al0.4As0.034Sb0.966(n)/InAs0.9Sb0.1 double interface at equilibrium and room temperature, by capacitance-voltage measurements (C-V). Mesa diodes, with three different diameters are characterized and physical quantities like doping concentration in the unintentionally doped (n.i.d) InAsSb material and diffusion potentials at interfaces are extracted from C-V data. Finally, the energy band diagram of the structure is drawn and experimental values of energy band offsets are deduced and compared to those obtained by a numerical simulation. |
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Energy band diagram and energy band offsets of Ga0.6Al0.4As0.034Sb0.966(p)/Ga0.6Al0.4As0.034Sb0.966(n)/InAs0.9Sb0.1 double interface determined by capacitance-voltage measurements |
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