Structural and morphological evolution of aluminum nitride thin films: Influence of additional energy to the sputtering process
Aluminum nitride (AlN) thin films were deposited on SiO2/Si substrates by radiofrequency (RF) magnetron sputtering using an aluminum target. The influence of the deposition parameters – such as nitrogen concentration in the sputtering atmosphere, RF power, total working pressure and substrate bias v...
Ausführliche Beschreibung
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| Autor*in: |
Signore, M.A. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2013transfer abstract |
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| Umfang: |
8 |
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| Übergeordnetes Werk: |
Enthalten in: Biological mechanisms of cadmium accumulation in edible Amaranth ( - Guo, Shi-Hong ELSEVIER, 2020, an international journal, New York, NY [u.a.] |
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| Übergeordnetes Werk: |
volume:74 ; year:2013 ; number:10 ; pages:1444-1451 ; extent:8 |
| Links: |
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| DOI / URN: |
10.1016/j.jpcs.2013.05.003 |
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| 520 | |a Aluminum nitride (AlN) thin films were deposited on SiO2/Si substrates by radiofrequency (RF) magnetron sputtering using an aluminum target. The influence of the deposition parameters – such as nitrogen concentration in the sputtering atmosphere, RF power, total working pressure and substrate bias voltage – on the structure, morphology and composition of the thin films was discussed. The structure was studied using X-ray diffraction (XRD), the morphology was studied using scanning electron microscopy (SEM) and the composition was studied using energy dispersive spectroscopy (EDS). These investigations showed that all of the films grew preferentially along the c-axis regardless of the deposition conditions, without the application of external heating, whereas the grain size and morphology strongly depended on the process parameters. Additional energy, which was supplied to the growing films by increasing the power or decreasing the working pressure, improved the crystallinity, but compressive stress was induced in the samples, thus resulting in a surface morphology evolution. | ||
| 520 | |a Aluminum nitride (AlN) thin films were deposited on SiO2/Si substrates by radiofrequency (RF) magnetron sputtering using an aluminum target. The influence of the deposition parameters – such as nitrogen concentration in the sputtering atmosphere, RF power, total working pressure and substrate bias voltage – on the structure, morphology and composition of the thin films was discussed. The structure was studied using X-ray diffraction (XRD), the morphology was studied using scanning electron microscopy (SEM) and the composition was studied using energy dispersive spectroscopy (EDS). These investigations showed that all of the films grew preferentially along the c-axis regardless of the deposition conditions, without the application of external heating, whereas the grain size and morphology strongly depended on the process parameters. Additional energy, which was supplied to the growing films by increasing the power or decreasing the working pressure, improved the crystallinity, but compressive stress was induced in the samples, thus resulting in a surface morphology evolution. | ||
| 650 | 7 | |a RF magnetron sputtering |2 Elsevier | |
| 650 | 7 | |a SEM-EDS |2 Elsevier | |
| 650 | 7 | |a XRD |2 Elsevier | |
| 650 | 7 | |a Aluminum nitride |2 Elsevier | |
| 700 | 1 | |a Bellini, E. |4 oth | |
| 700 | 1 | |a Taurino, A. |4 oth | |
| 700 | 1 | |a Catalano, M. |4 oth | |
| 700 | 1 | |a Martucci, M.C. |4 oth | |
| 700 | 1 | |a Cretì, P. |4 oth | |
| 700 | 1 | |a Vasanelli, L. |4 oth | |
| 700 | 1 | |a Siciliano, P. |4 oth | |
| 700 | 1 | |a Quaranta, F. |4 oth | |
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10.1016/j.jpcs.2013.05.003 doi GBVA2013022000012.pica (DE-627)ELV03354882X (ELSEVIER)S0022-3697(13)00191-1 DE-627 ger DE-627 rakwb eng 530 540 530 DE-600 540 DE-600 333.7 570 690 VZ BIODIV DE-30 fid 48.00 bkl Signore, M.A. verfasserin aut Structural and morphological evolution of aluminum nitride thin films: Influence of additional energy to the sputtering process 2013transfer abstract 8 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Aluminum nitride (AlN) thin films were deposited on SiO2/Si substrates by radiofrequency (RF) magnetron sputtering using an aluminum target. The influence of the deposition parameters – such as nitrogen concentration in the sputtering atmosphere, RF power, total working pressure and substrate bias voltage – on the structure, morphology and composition of the thin films was discussed. The structure was studied using X-ray diffraction (XRD), the morphology was studied using scanning electron microscopy (SEM) and the composition was studied using energy dispersive spectroscopy (EDS). These investigations showed that all of the films grew preferentially along the c-axis regardless of the deposition conditions, without the application of external heating, whereas the grain size and morphology strongly depended on the process parameters. Additional energy, which was supplied to the growing films by increasing the power or decreasing the working pressure, improved the crystallinity, but compressive stress was induced in the samples, thus resulting in a surface morphology evolution. Aluminum nitride (AlN) thin films were deposited on SiO2/Si substrates by radiofrequency (RF) magnetron sputtering using an aluminum target. The influence of the deposition parameters – such as nitrogen concentration in the sputtering atmosphere, RF power, total working pressure and substrate bias voltage – on the structure, morphology and composition of the thin films was discussed. The structure was studied using X-ray diffraction (XRD), the morphology was studied using scanning electron microscopy (SEM) and the composition was studied using energy dispersive spectroscopy (EDS). These investigations showed that all of the films grew preferentially along the c-axis regardless of the deposition conditions, without the application of external heating, whereas the grain size and morphology strongly depended on the process parameters. Additional energy, which was supplied to the growing films by increasing the power or decreasing the working pressure, improved the crystallinity, but compressive stress was induced in the samples, thus resulting in a surface morphology evolution. RF magnetron sputtering Elsevier SEM-EDS Elsevier XRD Elsevier Aluminum nitride Elsevier Bellini, E. oth Taurino, A. oth Catalano, M. oth Martucci, M.C. oth Cretì, P. oth Vasanelli, L. oth Siciliano, P. oth Quaranta, F. oth Enthalten in Elsevier Guo, Shi-Hong ELSEVIER Biological mechanisms of cadmium accumulation in edible Amaranth ( 2020 an international journal New York, NY [u.a.] (DE-627)ELV004090616 volume:74 year:2013 number:10 pages:1444-1451 extent:8 https://doi.org/10.1016/j.jpcs.2013.05.003 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U FID-BIODIV SSG-OLC-PHA SSG-OPC-FOR 48.00 Land- und Forstwirtschaft: Allgemeines VZ AR 74 2013 10 1444-1451 8 045F 530 |
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10.1016/j.jpcs.2013.05.003 doi GBVA2013022000012.pica (DE-627)ELV03354882X (ELSEVIER)S0022-3697(13)00191-1 DE-627 ger DE-627 rakwb eng 530 540 530 DE-600 540 DE-600 333.7 570 690 VZ BIODIV DE-30 fid 48.00 bkl Signore, M.A. verfasserin aut Structural and morphological evolution of aluminum nitride thin films: Influence of additional energy to the sputtering process 2013transfer abstract 8 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Aluminum nitride (AlN) thin films were deposited on SiO2/Si substrates by radiofrequency (RF) magnetron sputtering using an aluminum target. The influence of the deposition parameters – such as nitrogen concentration in the sputtering atmosphere, RF power, total working pressure and substrate bias voltage – on the structure, morphology and composition of the thin films was discussed. The structure was studied using X-ray diffraction (XRD), the morphology was studied using scanning electron microscopy (SEM) and the composition was studied using energy dispersive spectroscopy (EDS). These investigations showed that all of the films grew preferentially along the c-axis regardless of the deposition conditions, without the application of external heating, whereas the grain size and morphology strongly depended on the process parameters. Additional energy, which was supplied to the growing films by increasing the power or decreasing the working pressure, improved the crystallinity, but compressive stress was induced in the samples, thus resulting in a surface morphology evolution. Aluminum nitride (AlN) thin films were deposited on SiO2/Si substrates by radiofrequency (RF) magnetron sputtering using an aluminum target. The influence of the deposition parameters – such as nitrogen concentration in the sputtering atmosphere, RF power, total working pressure and substrate bias voltage – on the structure, morphology and composition of the thin films was discussed. The structure was studied using X-ray diffraction (XRD), the morphology was studied using scanning electron microscopy (SEM) and the composition was studied using energy dispersive spectroscopy (EDS). These investigations showed that all of the films grew preferentially along the c-axis regardless of the deposition conditions, without the application of external heating, whereas the grain size and morphology strongly depended on the process parameters. Additional energy, which was supplied to the growing films by increasing the power or decreasing the working pressure, improved the crystallinity, but compressive stress was induced in the samples, thus resulting in a surface morphology evolution. RF magnetron sputtering Elsevier SEM-EDS Elsevier XRD Elsevier Aluminum nitride Elsevier Bellini, E. oth Taurino, A. oth Catalano, M. oth Martucci, M.C. oth Cretì, P. oth Vasanelli, L. oth Siciliano, P. oth Quaranta, F. oth Enthalten in Elsevier Guo, Shi-Hong ELSEVIER Biological mechanisms of cadmium accumulation in edible Amaranth ( 2020 an international journal New York, NY [u.a.] (DE-627)ELV004090616 volume:74 year:2013 number:10 pages:1444-1451 extent:8 https://doi.org/10.1016/j.jpcs.2013.05.003 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U FID-BIODIV SSG-OLC-PHA SSG-OPC-FOR 48.00 Land- und Forstwirtschaft: Allgemeines VZ AR 74 2013 10 1444-1451 8 045F 530 |
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10.1016/j.jpcs.2013.05.003 doi GBVA2013022000012.pica (DE-627)ELV03354882X (ELSEVIER)S0022-3697(13)00191-1 DE-627 ger DE-627 rakwb eng 530 540 530 DE-600 540 DE-600 333.7 570 690 VZ BIODIV DE-30 fid 48.00 bkl Signore, M.A. verfasserin aut Structural and morphological evolution of aluminum nitride thin films: Influence of additional energy to the sputtering process 2013transfer abstract 8 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Aluminum nitride (AlN) thin films were deposited on SiO2/Si substrates by radiofrequency (RF) magnetron sputtering using an aluminum target. The influence of the deposition parameters – such as nitrogen concentration in the sputtering atmosphere, RF power, total working pressure and substrate bias voltage – on the structure, morphology and composition of the thin films was discussed. The structure was studied using X-ray diffraction (XRD), the morphology was studied using scanning electron microscopy (SEM) and the composition was studied using energy dispersive spectroscopy (EDS). These investigations showed that all of the films grew preferentially along the c-axis regardless of the deposition conditions, without the application of external heating, whereas the grain size and morphology strongly depended on the process parameters. Additional energy, which was supplied to the growing films by increasing the power or decreasing the working pressure, improved the crystallinity, but compressive stress was induced in the samples, thus resulting in a surface morphology evolution. Aluminum nitride (AlN) thin films were deposited on SiO2/Si substrates by radiofrequency (RF) magnetron sputtering using an aluminum target. The influence of the deposition parameters – such as nitrogen concentration in the sputtering atmosphere, RF power, total working pressure and substrate bias voltage – on the structure, morphology and composition of the thin films was discussed. The structure was studied using X-ray diffraction (XRD), the morphology was studied using scanning electron microscopy (SEM) and the composition was studied using energy dispersive spectroscopy (EDS). These investigations showed that all of the films grew preferentially along the c-axis regardless of the deposition conditions, without the application of external heating, whereas the grain size and morphology strongly depended on the process parameters. Additional energy, which was supplied to the growing films by increasing the power or decreasing the working pressure, improved the crystallinity, but compressive stress was induced in the samples, thus resulting in a surface morphology evolution. RF magnetron sputtering Elsevier SEM-EDS Elsevier XRD Elsevier Aluminum nitride Elsevier Bellini, E. oth Taurino, A. oth Catalano, M. oth Martucci, M.C. oth Cretì, P. oth Vasanelli, L. oth Siciliano, P. oth Quaranta, F. oth Enthalten in Elsevier Guo, Shi-Hong ELSEVIER Biological mechanisms of cadmium accumulation in edible Amaranth ( 2020 an international journal New York, NY [u.a.] (DE-627)ELV004090616 volume:74 year:2013 number:10 pages:1444-1451 extent:8 https://doi.org/10.1016/j.jpcs.2013.05.003 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U FID-BIODIV SSG-OLC-PHA SSG-OPC-FOR 48.00 Land- und Forstwirtschaft: Allgemeines VZ AR 74 2013 10 1444-1451 8 045F 530 |
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10.1016/j.jpcs.2013.05.003 doi GBVA2013022000012.pica (DE-627)ELV03354882X (ELSEVIER)S0022-3697(13)00191-1 DE-627 ger DE-627 rakwb eng 530 540 530 DE-600 540 DE-600 333.7 570 690 VZ BIODIV DE-30 fid 48.00 bkl Signore, M.A. verfasserin aut Structural and morphological evolution of aluminum nitride thin films: Influence of additional energy to the sputtering process 2013transfer abstract 8 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Aluminum nitride (AlN) thin films were deposited on SiO2/Si substrates by radiofrequency (RF) magnetron sputtering using an aluminum target. The influence of the deposition parameters – such as nitrogen concentration in the sputtering atmosphere, RF power, total working pressure and substrate bias voltage – on the structure, morphology and composition of the thin films was discussed. The structure was studied using X-ray diffraction (XRD), the morphology was studied using scanning electron microscopy (SEM) and the composition was studied using energy dispersive spectroscopy (EDS). These investigations showed that all of the films grew preferentially along the c-axis regardless of the deposition conditions, without the application of external heating, whereas the grain size and morphology strongly depended on the process parameters. Additional energy, which was supplied to the growing films by increasing the power or decreasing the working pressure, improved the crystallinity, but compressive stress was induced in the samples, thus resulting in a surface morphology evolution. Aluminum nitride (AlN) thin films were deposited on SiO2/Si substrates by radiofrequency (RF) magnetron sputtering using an aluminum target. The influence of the deposition parameters – such as nitrogen concentration in the sputtering atmosphere, RF power, total working pressure and substrate bias voltage – on the structure, morphology and composition of the thin films was discussed. The structure was studied using X-ray diffraction (XRD), the morphology was studied using scanning electron microscopy (SEM) and the composition was studied using energy dispersive spectroscopy (EDS). These investigations showed that all of the films grew preferentially along the c-axis regardless of the deposition conditions, without the application of external heating, whereas the grain size and morphology strongly depended on the process parameters. Additional energy, which was supplied to the growing films by increasing the power or decreasing the working pressure, improved the crystallinity, but compressive stress was induced in the samples, thus resulting in a surface morphology evolution. RF magnetron sputtering Elsevier SEM-EDS Elsevier XRD Elsevier Aluminum nitride Elsevier Bellini, E. oth Taurino, A. oth Catalano, M. oth Martucci, M.C. oth Cretì, P. oth Vasanelli, L. oth Siciliano, P. oth Quaranta, F. oth Enthalten in Elsevier Guo, Shi-Hong ELSEVIER Biological mechanisms of cadmium accumulation in edible Amaranth ( 2020 an international journal New York, NY [u.a.] (DE-627)ELV004090616 volume:74 year:2013 number:10 pages:1444-1451 extent:8 https://doi.org/10.1016/j.jpcs.2013.05.003 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U FID-BIODIV SSG-OLC-PHA SSG-OPC-FOR 48.00 Land- und Forstwirtschaft: Allgemeines VZ AR 74 2013 10 1444-1451 8 045F 530 |
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10.1016/j.jpcs.2013.05.003 doi GBVA2013022000012.pica (DE-627)ELV03354882X (ELSEVIER)S0022-3697(13)00191-1 DE-627 ger DE-627 rakwb eng 530 540 530 DE-600 540 DE-600 333.7 570 690 VZ BIODIV DE-30 fid 48.00 bkl Signore, M.A. verfasserin aut Structural and morphological evolution of aluminum nitride thin films: Influence of additional energy to the sputtering process 2013transfer abstract 8 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Aluminum nitride (AlN) thin films were deposited on SiO2/Si substrates by radiofrequency (RF) magnetron sputtering using an aluminum target. The influence of the deposition parameters – such as nitrogen concentration in the sputtering atmosphere, RF power, total working pressure and substrate bias voltage – on the structure, morphology and composition of the thin films was discussed. The structure was studied using X-ray diffraction (XRD), the morphology was studied using scanning electron microscopy (SEM) and the composition was studied using energy dispersive spectroscopy (EDS). These investigations showed that all of the films grew preferentially along the c-axis regardless of the deposition conditions, without the application of external heating, whereas the grain size and morphology strongly depended on the process parameters. Additional energy, which was supplied to the growing films by increasing the power or decreasing the working pressure, improved the crystallinity, but compressive stress was induced in the samples, thus resulting in a surface morphology evolution. Aluminum nitride (AlN) thin films were deposited on SiO2/Si substrates by radiofrequency (RF) magnetron sputtering using an aluminum target. The influence of the deposition parameters – such as nitrogen concentration in the sputtering atmosphere, RF power, total working pressure and substrate bias voltage – on the structure, morphology and composition of the thin films was discussed. The structure was studied using X-ray diffraction (XRD), the morphology was studied using scanning electron microscopy (SEM) and the composition was studied using energy dispersive spectroscopy (EDS). These investigations showed that all of the films grew preferentially along the c-axis regardless of the deposition conditions, without the application of external heating, whereas the grain size and morphology strongly depended on the process parameters. Additional energy, which was supplied to the growing films by increasing the power or decreasing the working pressure, improved the crystallinity, but compressive stress was induced in the samples, thus resulting in a surface morphology evolution. RF magnetron sputtering Elsevier SEM-EDS Elsevier XRD Elsevier Aluminum nitride Elsevier Bellini, E. oth Taurino, A. oth Catalano, M. oth Martucci, M.C. oth Cretì, P. oth Vasanelli, L. oth Siciliano, P. oth Quaranta, F. oth Enthalten in Elsevier Guo, Shi-Hong ELSEVIER Biological mechanisms of cadmium accumulation in edible Amaranth ( 2020 an international journal New York, NY [u.a.] (DE-627)ELV004090616 volume:74 year:2013 number:10 pages:1444-1451 extent:8 https://doi.org/10.1016/j.jpcs.2013.05.003 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U FID-BIODIV SSG-OLC-PHA SSG-OPC-FOR 48.00 Land- und Forstwirtschaft: Allgemeines VZ AR 74 2013 10 1444-1451 8 045F 530 |
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Structural and morphological evolution of aluminum nitride thin films: Influence of additional energy to the sputtering process |
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Aluminum nitride (AlN) thin films were deposited on SiO2/Si substrates by radiofrequency (RF) magnetron sputtering using an aluminum target. The influence of the deposition parameters – such as nitrogen concentration in the sputtering atmosphere, RF power, total working pressure and substrate bias voltage – on the structure, morphology and composition of the thin films was discussed. The structure was studied using X-ray diffraction (XRD), the morphology was studied using scanning electron microscopy (SEM) and the composition was studied using energy dispersive spectroscopy (EDS). These investigations showed that all of the films grew preferentially along the c-axis regardless of the deposition conditions, without the application of external heating, whereas the grain size and morphology strongly depended on the process parameters. Additional energy, which was supplied to the growing films by increasing the power or decreasing the working pressure, improved the crystallinity, but compressive stress was induced in the samples, thus resulting in a surface morphology evolution. |
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Aluminum nitride (AlN) thin films were deposited on SiO2/Si substrates by radiofrequency (RF) magnetron sputtering using an aluminum target. The influence of the deposition parameters – such as nitrogen concentration in the sputtering atmosphere, RF power, total working pressure and substrate bias voltage – on the structure, morphology and composition of the thin films was discussed. The structure was studied using X-ray diffraction (XRD), the morphology was studied using scanning electron microscopy (SEM) and the composition was studied using energy dispersive spectroscopy (EDS). These investigations showed that all of the films grew preferentially along the c-axis regardless of the deposition conditions, without the application of external heating, whereas the grain size and morphology strongly depended on the process parameters. Additional energy, which was supplied to the growing films by increasing the power or decreasing the working pressure, improved the crystallinity, but compressive stress was induced in the samples, thus resulting in a surface morphology evolution. |
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Aluminum nitride (AlN) thin films were deposited on SiO2/Si substrates by radiofrequency (RF) magnetron sputtering using an aluminum target. The influence of the deposition parameters – such as nitrogen concentration in the sputtering atmosphere, RF power, total working pressure and substrate bias voltage – on the structure, morphology and composition of the thin films was discussed. The structure was studied using X-ray diffraction (XRD), the morphology was studied using scanning electron microscopy (SEM) and the composition was studied using energy dispersive spectroscopy (EDS). These investigations showed that all of the films grew preferentially along the c-axis regardless of the deposition conditions, without the application of external heating, whereas the grain size and morphology strongly depended on the process parameters. Additional energy, which was supplied to the growing films by increasing the power or decreasing the working pressure, improved the crystallinity, but compressive stress was induced in the samples, thus resulting in a surface morphology evolution. |
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