Optimization of sputtered ZnO transparent conductive seed layer for flexible ZnO-nanorod-based devices
The fabrication of inorganic transparent conductive oxide films on polymer substrates has been of increasing interest due to their potential applications in the field of flexible electronics. The subject of the present work is replacing the preferably-used indium tin oxide films by an aluminium zinc...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Novák, Petr [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2017transfer abstract |
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| Umfang: |
6 |
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| Übergeordnetes Werk: |
Enthalten in: Formation and degradation of N-oxide venlafaxine during ozonation and biological post-treatment - Zucker, Ines ELSEVIER, 2017, international journal on the science and technology of condensed matter films, Amsterdam [u.a.] |
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| Übergeordnetes Werk: |
volume:634 ; year:2017 ; day:31 ; month:07 ; pages:169-174 ; extent:6 |
| Links: |
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| DOI / URN: |
10.1016/j.tsf.2017.02.017 |
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| 245 | 1 | 0 | |a Optimization of sputtered ZnO transparent conductive seed layer for flexible ZnO-nanorod-based devices |
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| 520 | |a The fabrication of inorganic transparent conductive oxide films on polymer substrates has been of increasing interest due to their potential applications in the field of flexible electronics. The subject of the present work is replacing the preferably-used indium tin oxide films by an aluminium zinc oxide (AZO) film in ZnO-nanorod-based devices, combining the role of the seed layer for nanorod growth with a sheet resistance lower than 100Ω/sq. The investigated AZO films with thickness up to 300nm were deposited on 150μm thick polyethylene terephthalate substrates by (i) radio-frequency magnetron sputtering from a ZnO/Al2O3 target and (ii) co-sputtering from ZnO and Al targets in an argon atmosphere. AZO films with good transparency and thickness of 160nm and sheet resistance lower than 100Ω/sq. were prepared by co-sputtering. It was found that co-sputtering leads to lower film resistivity due to better activation of Al atoms in the AZO film. ZnO nanorod growth was demonstrated on both types of film, and the co-sputtered AZO films were covered by a pure (undoped) ZnO film to improve the ZnO nanorod morphology. | ||
| 520 | |a The fabrication of inorganic transparent conductive oxide films on polymer substrates has been of increasing interest due to their potential applications in the field of flexible electronics. The subject of the present work is replacing the preferably-used indium tin oxide films by an aluminium zinc oxide (AZO) film in ZnO-nanorod-based devices, combining the role of the seed layer for nanorod growth with a sheet resistance lower than 100Ω/sq. The investigated AZO films with thickness up to 300nm were deposited on 150μm thick polyethylene terephthalate substrates by (i) radio-frequency magnetron sputtering from a ZnO/Al2O3 target and (ii) co-sputtering from ZnO and Al targets in an argon atmosphere. AZO films with good transparency and thickness of 160nm and sheet resistance lower than 100Ω/sq. were prepared by co-sputtering. It was found that co-sputtering leads to lower film resistivity due to better activation of Al atoms in the AZO film. ZnO nanorod growth was demonstrated on both types of film, and the co-sputtered AZO films were covered by a pure (undoped) ZnO film to improve the ZnO nanorod morphology. | ||
| 700 | 1 | |a Briscoe, Joe |4 oth | |
| 700 | 1 | |a Kozák, Tomáš |4 oth | |
| 700 | 1 | |a Kormunda, Martin |4 oth | |
| 700 | 1 | |a Netrvalová, Marie |4 oth | |
| 700 | 1 | |a Bachratá, Štěpánka |4 oth | |
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10.1016/j.tsf.2017.02.017 doi GBV00000000000066A.pica (DE-627)ELV035667109 (ELSEVIER)S0040-6090(17)30106-2 DE-627 ger DE-627 rakwb eng 070 660 070 DE-600 660 DE-600 333.7 610 VZ 43.12 bkl 43.13 bkl 44.13 bkl Novák, Petr verfasserin aut Optimization of sputtered ZnO transparent conductive seed layer for flexible ZnO-nanorod-based devices 2017transfer abstract 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The fabrication of inorganic transparent conductive oxide films on polymer substrates has been of increasing interest due to their potential applications in the field of flexible electronics. The subject of the present work is replacing the preferably-used indium tin oxide films by an aluminium zinc oxide (AZO) film in ZnO-nanorod-based devices, combining the role of the seed layer for nanorod growth with a sheet resistance lower than 100Ω/sq. The investigated AZO films with thickness up to 300nm were deposited on 150μm thick polyethylene terephthalate substrates by (i) radio-frequency magnetron sputtering from a ZnO/Al2O3 target and (ii) co-sputtering from ZnO and Al targets in an argon atmosphere. AZO films with good transparency and thickness of 160nm and sheet resistance lower than 100Ω/sq. were prepared by co-sputtering. It was found that co-sputtering leads to lower film resistivity due to better activation of Al atoms in the AZO film. ZnO nanorod growth was demonstrated on both types of film, and the co-sputtered AZO films were covered by a pure (undoped) ZnO film to improve the ZnO nanorod morphology. The fabrication of inorganic transparent conductive oxide films on polymer substrates has been of increasing interest due to their potential applications in the field of flexible electronics. The subject of the present work is replacing the preferably-used indium tin oxide films by an aluminium zinc oxide (AZO) film in ZnO-nanorod-based devices, combining the role of the seed layer for nanorod growth with a sheet resistance lower than 100Ω/sq. The investigated AZO films with thickness up to 300nm were deposited on 150μm thick polyethylene terephthalate substrates by (i) radio-frequency magnetron sputtering from a ZnO/Al2O3 target and (ii) co-sputtering from ZnO and Al targets in an argon atmosphere. AZO films with good transparency and thickness of 160nm and sheet resistance lower than 100Ω/sq. were prepared by co-sputtering. It was found that co-sputtering leads to lower film resistivity due to better activation of Al atoms in the AZO film. ZnO nanorod growth was demonstrated on both types of film, and the co-sputtered AZO films were covered by a pure (undoped) ZnO film to improve the ZnO nanorod morphology. Briscoe, Joe oth Kozák, Tomáš oth Kormunda, Martin oth Netrvalová, Marie oth Bachratá, Štěpánka oth Enthalten in Elsevier Zucker, Ines ELSEVIER Formation and degradation of N-oxide venlafaxine during ozonation and biological post-treatment 2017 international journal on the science and technology of condensed matter films Amsterdam [u.a.] (DE-627)ELV000692654 volume:634 year:2017 day:31 month:07 pages:169-174 extent:6 https://doi.org/10.1016/j.tsf.2017.02.017 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA SSG-OPC-GGO 43.12 Umweltchemie VZ 43.13 Umwelttoxikologie VZ 44.13 Medizinische Ökologie VZ AR 634 2017 31 0731 169-174 6 045F 070 |
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10.1016/j.tsf.2017.02.017 doi GBV00000000000066A.pica (DE-627)ELV035667109 (ELSEVIER)S0040-6090(17)30106-2 DE-627 ger DE-627 rakwb eng 070 660 070 DE-600 660 DE-600 333.7 610 VZ 43.12 bkl 43.13 bkl 44.13 bkl Novák, Petr verfasserin aut Optimization of sputtered ZnO transparent conductive seed layer for flexible ZnO-nanorod-based devices 2017transfer abstract 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The fabrication of inorganic transparent conductive oxide films on polymer substrates has been of increasing interest due to their potential applications in the field of flexible electronics. The subject of the present work is replacing the preferably-used indium tin oxide films by an aluminium zinc oxide (AZO) film in ZnO-nanorod-based devices, combining the role of the seed layer for nanorod growth with a sheet resistance lower than 100Ω/sq. The investigated AZO films with thickness up to 300nm were deposited on 150μm thick polyethylene terephthalate substrates by (i) radio-frequency magnetron sputtering from a ZnO/Al2O3 target and (ii) co-sputtering from ZnO and Al targets in an argon atmosphere. AZO films with good transparency and thickness of 160nm and sheet resistance lower than 100Ω/sq. were prepared by co-sputtering. It was found that co-sputtering leads to lower film resistivity due to better activation of Al atoms in the AZO film. ZnO nanorod growth was demonstrated on both types of film, and the co-sputtered AZO films were covered by a pure (undoped) ZnO film to improve the ZnO nanorod morphology. The fabrication of inorganic transparent conductive oxide films on polymer substrates has been of increasing interest due to their potential applications in the field of flexible electronics. The subject of the present work is replacing the preferably-used indium tin oxide films by an aluminium zinc oxide (AZO) film in ZnO-nanorod-based devices, combining the role of the seed layer for nanorod growth with a sheet resistance lower than 100Ω/sq. The investigated AZO films with thickness up to 300nm were deposited on 150μm thick polyethylene terephthalate substrates by (i) radio-frequency magnetron sputtering from a ZnO/Al2O3 target and (ii) co-sputtering from ZnO and Al targets in an argon atmosphere. AZO films with good transparency and thickness of 160nm and sheet resistance lower than 100Ω/sq. were prepared by co-sputtering. It was found that co-sputtering leads to lower film resistivity due to better activation of Al atoms in the AZO film. ZnO nanorod growth was demonstrated on both types of film, and the co-sputtered AZO films were covered by a pure (undoped) ZnO film to improve the ZnO nanorod morphology. Briscoe, Joe oth Kozák, Tomáš oth Kormunda, Martin oth Netrvalová, Marie oth Bachratá, Štěpánka oth Enthalten in Elsevier Zucker, Ines ELSEVIER Formation and degradation of N-oxide venlafaxine during ozonation and biological post-treatment 2017 international journal on the science and technology of condensed matter films Amsterdam [u.a.] (DE-627)ELV000692654 volume:634 year:2017 day:31 month:07 pages:169-174 extent:6 https://doi.org/10.1016/j.tsf.2017.02.017 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA SSG-OPC-GGO 43.12 Umweltchemie VZ 43.13 Umwelttoxikologie VZ 44.13 Medizinische Ökologie VZ AR 634 2017 31 0731 169-174 6 045F 070 |
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10.1016/j.tsf.2017.02.017 doi GBV00000000000066A.pica (DE-627)ELV035667109 (ELSEVIER)S0040-6090(17)30106-2 DE-627 ger DE-627 rakwb eng 070 660 070 DE-600 660 DE-600 333.7 610 VZ 43.12 bkl 43.13 bkl 44.13 bkl Novák, Petr verfasserin aut Optimization of sputtered ZnO transparent conductive seed layer for flexible ZnO-nanorod-based devices 2017transfer abstract 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The fabrication of inorganic transparent conductive oxide films on polymer substrates has been of increasing interest due to their potential applications in the field of flexible electronics. The subject of the present work is replacing the preferably-used indium tin oxide films by an aluminium zinc oxide (AZO) film in ZnO-nanorod-based devices, combining the role of the seed layer for nanorod growth with a sheet resistance lower than 100Ω/sq. The investigated AZO films with thickness up to 300nm were deposited on 150μm thick polyethylene terephthalate substrates by (i) radio-frequency magnetron sputtering from a ZnO/Al2O3 target and (ii) co-sputtering from ZnO and Al targets in an argon atmosphere. AZO films with good transparency and thickness of 160nm and sheet resistance lower than 100Ω/sq. were prepared by co-sputtering. It was found that co-sputtering leads to lower film resistivity due to better activation of Al atoms in the AZO film. ZnO nanorod growth was demonstrated on both types of film, and the co-sputtered AZO films were covered by a pure (undoped) ZnO film to improve the ZnO nanorod morphology. The fabrication of inorganic transparent conductive oxide films on polymer substrates has been of increasing interest due to their potential applications in the field of flexible electronics. The subject of the present work is replacing the preferably-used indium tin oxide films by an aluminium zinc oxide (AZO) film in ZnO-nanorod-based devices, combining the role of the seed layer for nanorod growth with a sheet resistance lower than 100Ω/sq. The investigated AZO films with thickness up to 300nm were deposited on 150μm thick polyethylene terephthalate substrates by (i) radio-frequency magnetron sputtering from a ZnO/Al2O3 target and (ii) co-sputtering from ZnO and Al targets in an argon atmosphere. AZO films with good transparency and thickness of 160nm and sheet resistance lower than 100Ω/sq. were prepared by co-sputtering. It was found that co-sputtering leads to lower film resistivity due to better activation of Al atoms in the AZO film. ZnO nanorod growth was demonstrated on both types of film, and the co-sputtered AZO films were covered by a pure (undoped) ZnO film to improve the ZnO nanorod morphology. Briscoe, Joe oth Kozák, Tomáš oth Kormunda, Martin oth Netrvalová, Marie oth Bachratá, Štěpánka oth Enthalten in Elsevier Zucker, Ines ELSEVIER Formation and degradation of N-oxide venlafaxine during ozonation and biological post-treatment 2017 international journal on the science and technology of condensed matter films Amsterdam [u.a.] (DE-627)ELV000692654 volume:634 year:2017 day:31 month:07 pages:169-174 extent:6 https://doi.org/10.1016/j.tsf.2017.02.017 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA SSG-OPC-GGO 43.12 Umweltchemie VZ 43.13 Umwelttoxikologie VZ 44.13 Medizinische Ökologie VZ AR 634 2017 31 0731 169-174 6 045F 070 |
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10.1016/j.tsf.2017.02.017 doi GBV00000000000066A.pica (DE-627)ELV035667109 (ELSEVIER)S0040-6090(17)30106-2 DE-627 ger DE-627 rakwb eng 070 660 070 DE-600 660 DE-600 333.7 610 VZ 43.12 bkl 43.13 bkl 44.13 bkl Novák, Petr verfasserin aut Optimization of sputtered ZnO transparent conductive seed layer for flexible ZnO-nanorod-based devices 2017transfer abstract 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The fabrication of inorganic transparent conductive oxide films on polymer substrates has been of increasing interest due to their potential applications in the field of flexible electronics. The subject of the present work is replacing the preferably-used indium tin oxide films by an aluminium zinc oxide (AZO) film in ZnO-nanorod-based devices, combining the role of the seed layer for nanorod growth with a sheet resistance lower than 100Ω/sq. The investigated AZO films with thickness up to 300nm were deposited on 150μm thick polyethylene terephthalate substrates by (i) radio-frequency magnetron sputtering from a ZnO/Al2O3 target and (ii) co-sputtering from ZnO and Al targets in an argon atmosphere. AZO films with good transparency and thickness of 160nm and sheet resistance lower than 100Ω/sq. were prepared by co-sputtering. It was found that co-sputtering leads to lower film resistivity due to better activation of Al atoms in the AZO film. ZnO nanorod growth was demonstrated on both types of film, and the co-sputtered AZO films were covered by a pure (undoped) ZnO film to improve the ZnO nanorod morphology. The fabrication of inorganic transparent conductive oxide films on polymer substrates has been of increasing interest due to their potential applications in the field of flexible electronics. The subject of the present work is replacing the preferably-used indium tin oxide films by an aluminium zinc oxide (AZO) film in ZnO-nanorod-based devices, combining the role of the seed layer for nanorod growth with a sheet resistance lower than 100Ω/sq. The investigated AZO films with thickness up to 300nm were deposited on 150μm thick polyethylene terephthalate substrates by (i) radio-frequency magnetron sputtering from a ZnO/Al2O3 target and (ii) co-sputtering from ZnO and Al targets in an argon atmosphere. AZO films with good transparency and thickness of 160nm and sheet resistance lower than 100Ω/sq. were prepared by co-sputtering. It was found that co-sputtering leads to lower film resistivity due to better activation of Al atoms in the AZO film. ZnO nanorod growth was demonstrated on both types of film, and the co-sputtered AZO films were covered by a pure (undoped) ZnO film to improve the ZnO nanorod morphology. Briscoe, Joe oth Kozák, Tomáš oth Kormunda, Martin oth Netrvalová, Marie oth Bachratá, Štěpánka oth Enthalten in Elsevier Zucker, Ines ELSEVIER Formation and degradation of N-oxide venlafaxine during ozonation and biological post-treatment 2017 international journal on the science and technology of condensed matter films Amsterdam [u.a.] (DE-627)ELV000692654 volume:634 year:2017 day:31 month:07 pages:169-174 extent:6 https://doi.org/10.1016/j.tsf.2017.02.017 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA SSG-OPC-GGO 43.12 Umweltchemie VZ 43.13 Umwelttoxikologie VZ 44.13 Medizinische Ökologie VZ AR 634 2017 31 0731 169-174 6 045F 070 |
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10.1016/j.tsf.2017.02.017 doi GBV00000000000066A.pica (DE-627)ELV035667109 (ELSEVIER)S0040-6090(17)30106-2 DE-627 ger DE-627 rakwb eng 070 660 070 DE-600 660 DE-600 333.7 610 VZ 43.12 bkl 43.13 bkl 44.13 bkl Novák, Petr verfasserin aut Optimization of sputtered ZnO transparent conductive seed layer for flexible ZnO-nanorod-based devices 2017transfer abstract 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The fabrication of inorganic transparent conductive oxide films on polymer substrates has been of increasing interest due to their potential applications in the field of flexible electronics. The subject of the present work is replacing the preferably-used indium tin oxide films by an aluminium zinc oxide (AZO) film in ZnO-nanorod-based devices, combining the role of the seed layer for nanorod growth with a sheet resistance lower than 100Ω/sq. The investigated AZO films with thickness up to 300nm were deposited on 150μm thick polyethylene terephthalate substrates by (i) radio-frequency magnetron sputtering from a ZnO/Al2O3 target and (ii) co-sputtering from ZnO and Al targets in an argon atmosphere. AZO films with good transparency and thickness of 160nm and sheet resistance lower than 100Ω/sq. were prepared by co-sputtering. It was found that co-sputtering leads to lower film resistivity due to better activation of Al atoms in the AZO film. ZnO nanorod growth was demonstrated on both types of film, and the co-sputtered AZO films were covered by a pure (undoped) ZnO film to improve the ZnO nanorod morphology. The fabrication of inorganic transparent conductive oxide films on polymer substrates has been of increasing interest due to their potential applications in the field of flexible electronics. The subject of the present work is replacing the preferably-used indium tin oxide films by an aluminium zinc oxide (AZO) film in ZnO-nanorod-based devices, combining the role of the seed layer for nanorod growth with a sheet resistance lower than 100Ω/sq. The investigated AZO films with thickness up to 300nm were deposited on 150μm thick polyethylene terephthalate substrates by (i) radio-frequency magnetron sputtering from a ZnO/Al2O3 target and (ii) co-sputtering from ZnO and Al targets in an argon atmosphere. AZO films with good transparency and thickness of 160nm and sheet resistance lower than 100Ω/sq. were prepared by co-sputtering. It was found that co-sputtering leads to lower film resistivity due to better activation of Al atoms in the AZO film. ZnO nanorod growth was demonstrated on both types of film, and the co-sputtered AZO films were covered by a pure (undoped) ZnO film to improve the ZnO nanorod morphology. Briscoe, Joe oth Kozák, Tomáš oth Kormunda, Martin oth Netrvalová, Marie oth Bachratá, Štěpánka oth Enthalten in Elsevier Zucker, Ines ELSEVIER Formation and degradation of N-oxide venlafaxine during ozonation and biological post-treatment 2017 international journal on the science and technology of condensed matter films Amsterdam [u.a.] (DE-627)ELV000692654 volume:634 year:2017 day:31 month:07 pages:169-174 extent:6 https://doi.org/10.1016/j.tsf.2017.02.017 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA SSG-OPC-GGO 43.12 Umweltchemie VZ 43.13 Umwelttoxikologie VZ 44.13 Medizinische Ökologie VZ AR 634 2017 31 0731 169-174 6 045F 070 |
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Enthalten in Formation and degradation of N-oxide venlafaxine during ozonation and biological post-treatment Amsterdam [u.a.] volume:634 year:2017 day:31 month:07 pages:169-174 extent:6 |
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Enthalten in Formation and degradation of N-oxide venlafaxine during ozonation and biological post-treatment Amsterdam [u.a.] volume:634 year:2017 day:31 month:07 pages:169-174 extent:6 |
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Formation and degradation of N-oxide venlafaxine during ozonation and biological post-treatment |
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Novák, Petr @@aut@@ Briscoe, Joe @@oth@@ Kozák, Tomáš @@oth@@ Kormunda, Martin @@oth@@ Netrvalová, Marie @@oth@@ Bachratá, Štěpánka @@oth@@ |
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Formation and degradation of N-oxide venlafaxine during ozonation and biological post-treatment |
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Optimization of sputtered ZnO transparent conductive seed layer for flexible ZnO-nanorod-based devices |
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The fabrication of inorganic transparent conductive oxide films on polymer substrates has been of increasing interest due to their potential applications in the field of flexible electronics. The subject of the present work is replacing the preferably-used indium tin oxide films by an aluminium zinc oxide (AZO) film in ZnO-nanorod-based devices, combining the role of the seed layer for nanorod growth with a sheet resistance lower than 100Ω/sq. The investigated AZO films with thickness up to 300nm were deposited on 150μm thick polyethylene terephthalate substrates by (i) radio-frequency magnetron sputtering from a ZnO/Al2O3 target and (ii) co-sputtering from ZnO and Al targets in an argon atmosphere. AZO films with good transparency and thickness of 160nm and sheet resistance lower than 100Ω/sq. were prepared by co-sputtering. It was found that co-sputtering leads to lower film resistivity due to better activation of Al atoms in the AZO film. ZnO nanorod growth was demonstrated on both types of film, and the co-sputtered AZO films were covered by a pure (undoped) ZnO film to improve the ZnO nanorod morphology. |
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The fabrication of inorganic transparent conductive oxide films on polymer substrates has been of increasing interest due to their potential applications in the field of flexible electronics. The subject of the present work is replacing the preferably-used indium tin oxide films by an aluminium zinc oxide (AZO) film in ZnO-nanorod-based devices, combining the role of the seed layer for nanorod growth with a sheet resistance lower than 100Ω/sq. The investigated AZO films with thickness up to 300nm were deposited on 150μm thick polyethylene terephthalate substrates by (i) radio-frequency magnetron sputtering from a ZnO/Al2O3 target and (ii) co-sputtering from ZnO and Al targets in an argon atmosphere. AZO films with good transparency and thickness of 160nm and sheet resistance lower than 100Ω/sq. were prepared by co-sputtering. It was found that co-sputtering leads to lower film resistivity due to better activation of Al atoms in the AZO film. ZnO nanorod growth was demonstrated on both types of film, and the co-sputtered AZO films were covered by a pure (undoped) ZnO film to improve the ZnO nanorod morphology. |
| abstract_unstemmed |
The fabrication of inorganic transparent conductive oxide films on polymer substrates has been of increasing interest due to their potential applications in the field of flexible electronics. The subject of the present work is replacing the preferably-used indium tin oxide films by an aluminium zinc oxide (AZO) film in ZnO-nanorod-based devices, combining the role of the seed layer for nanorod growth with a sheet resistance lower than 100Ω/sq. The investigated AZO films with thickness up to 300nm were deposited on 150μm thick polyethylene terephthalate substrates by (i) radio-frequency magnetron sputtering from a ZnO/Al2O3 target and (ii) co-sputtering from ZnO and Al targets in an argon atmosphere. AZO films with good transparency and thickness of 160nm and sheet resistance lower than 100Ω/sq. were prepared by co-sputtering. It was found that co-sputtering leads to lower film resistivity due to better activation of Al atoms in the AZO film. ZnO nanorod growth was demonstrated on both types of film, and the co-sputtered AZO films were covered by a pure (undoped) ZnO film to improve the ZnO nanorod morphology. |
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Optimization of sputtered ZnO transparent conductive seed layer for flexible ZnO-nanorod-based devices |
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