Enhanced B doping in CVD-grown GeSn:B using B δ-doping layers
• Increasing B doping reduces Sn incorporation, both for co-flow and δ-doping processes. • For a fixed GeSn composition, B δ-doping process reaches four times higher B concentration than co-flow process. • Highest chemical B concentration of 2 × 1021 cm−3 is achieved at Sn content ∼0.6%. • Highest a...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Kohen, David [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2018 |
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| Schlagwörter: |
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| Umfang: |
6 |
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| Übergeordnetes Werk: |
Enthalten in: The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting - 2011, Amsterdam [u.a.] |
|---|---|
| Übergeordnetes Werk: |
volume:483 ; year:2018 ; day:1 ; month:02 ; pages:285-290 ; extent:6 |
| Links: |
|---|
| DOI / URN: |
10.1016/j.jcrysgro.2017.12.018 |
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ELV041571045 |
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| 520 | |a • Increasing B doping reduces Sn incorporation, both for co-flow and δ-doping processes. • For a fixed GeSn composition, B δ-doping process reaches four times higher B concentration than co-flow process. • Highest chemical B concentration of 2 × 1021 cm−3 is achieved at Sn content ∼0.6%. • Highest active B concentration of 5 × 1020 cm−3 is achieved at Sn content ∼0.6%. • Reduced crystalline quality with B δ-doping process compared to co-flow process. | ||
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10.1016/j.jcrysgro.2017.12.018 doi GBV00000000000302_01.pica (DE-627)ELV041571045 (ELSEVIER)S0022-0248(17)30719-4 DE-627 ger DE-627 rakwb eng 610 VZ 570 540 VZ Kohen, David verfasserin aut Enhanced B doping in CVD-grown GeSn:B using B δ-doping layers 2018 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier • Increasing B doping reduces Sn incorporation, both for co-flow and δ-doping processes. • For a fixed GeSn composition, B δ-doping process reaches four times higher B concentration than co-flow process. • Highest chemical B concentration of 2 × 1021 cm−3 is achieved at Sn content ∼0.6%. • Highest active B concentration of 5 × 1020 cm−3 is achieved at Sn content ∼0.6%. • Reduced crystalline quality with B δ-doping process compared to co-flow process. A3. Chemical vapor deposition process Elsevier B1. Germanium tin Elsevier A1. Doping Elsevier A1. Delta-doping Elsevier Vohra, Anurag oth Loo, Roger oth Vandervorst, Wilfried oth Bhargava, Nupur oth Margetis, Joe oth Tolle, John oth Enthalten in Elsevier The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting 2011 Amsterdam [u.a.] (DE-627)ELV010662650 volume:483 year:2018 day:1 month:02 pages:285-290 extent:6 https://doi.org/10.1016/j.jcrysgro.2017.12.018 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_22 GBV_ILN_40 GBV_ILN_105 AR 483 2018 1 0201 285-290 6 |
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10.1016/j.jcrysgro.2017.12.018 doi GBV00000000000302_01.pica (DE-627)ELV041571045 (ELSEVIER)S0022-0248(17)30719-4 DE-627 ger DE-627 rakwb eng 610 VZ 570 540 VZ Kohen, David verfasserin aut Enhanced B doping in CVD-grown GeSn:B using B δ-doping layers 2018 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier • Increasing B doping reduces Sn incorporation, both for co-flow and δ-doping processes. • For a fixed GeSn composition, B δ-doping process reaches four times higher B concentration than co-flow process. • Highest chemical B concentration of 2 × 1021 cm−3 is achieved at Sn content ∼0.6%. • Highest active B concentration of 5 × 1020 cm−3 is achieved at Sn content ∼0.6%. • Reduced crystalline quality with B δ-doping process compared to co-flow process. A3. Chemical vapor deposition process Elsevier B1. Germanium tin Elsevier A1. Doping Elsevier A1. Delta-doping Elsevier Vohra, Anurag oth Loo, Roger oth Vandervorst, Wilfried oth Bhargava, Nupur oth Margetis, Joe oth Tolle, John oth Enthalten in Elsevier The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting 2011 Amsterdam [u.a.] (DE-627)ELV010662650 volume:483 year:2018 day:1 month:02 pages:285-290 extent:6 https://doi.org/10.1016/j.jcrysgro.2017.12.018 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_22 GBV_ILN_40 GBV_ILN_105 AR 483 2018 1 0201 285-290 6 |
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10.1016/j.jcrysgro.2017.12.018 doi GBV00000000000302_01.pica (DE-627)ELV041571045 (ELSEVIER)S0022-0248(17)30719-4 DE-627 ger DE-627 rakwb eng 610 VZ 570 540 VZ Kohen, David verfasserin aut Enhanced B doping in CVD-grown GeSn:B using B δ-doping layers 2018 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier • Increasing B doping reduces Sn incorporation, both for co-flow and δ-doping processes. • For a fixed GeSn composition, B δ-doping process reaches four times higher B concentration than co-flow process. • Highest chemical B concentration of 2 × 1021 cm−3 is achieved at Sn content ∼0.6%. • Highest active B concentration of 5 × 1020 cm−3 is achieved at Sn content ∼0.6%. • Reduced crystalline quality with B δ-doping process compared to co-flow process. A3. Chemical vapor deposition process Elsevier B1. Germanium tin Elsevier A1. Doping Elsevier A1. Delta-doping Elsevier Vohra, Anurag oth Loo, Roger oth Vandervorst, Wilfried oth Bhargava, Nupur oth Margetis, Joe oth Tolle, John oth Enthalten in Elsevier The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting 2011 Amsterdam [u.a.] (DE-627)ELV010662650 volume:483 year:2018 day:1 month:02 pages:285-290 extent:6 https://doi.org/10.1016/j.jcrysgro.2017.12.018 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_22 GBV_ILN_40 GBV_ILN_105 AR 483 2018 1 0201 285-290 6 |
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10.1016/j.jcrysgro.2017.12.018 doi GBV00000000000302_01.pica (DE-627)ELV041571045 (ELSEVIER)S0022-0248(17)30719-4 DE-627 ger DE-627 rakwb eng 610 VZ 570 540 VZ Kohen, David verfasserin aut Enhanced B doping in CVD-grown GeSn:B using B δ-doping layers 2018 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier • Increasing B doping reduces Sn incorporation, both for co-flow and δ-doping processes. • For a fixed GeSn composition, B δ-doping process reaches four times higher B concentration than co-flow process. • Highest chemical B concentration of 2 × 1021 cm−3 is achieved at Sn content ∼0.6%. • Highest active B concentration of 5 × 1020 cm−3 is achieved at Sn content ∼0.6%. • Reduced crystalline quality with B δ-doping process compared to co-flow process. A3. Chemical vapor deposition process Elsevier B1. Germanium tin Elsevier A1. Doping Elsevier A1. Delta-doping Elsevier Vohra, Anurag oth Loo, Roger oth Vandervorst, Wilfried oth Bhargava, Nupur oth Margetis, Joe oth Tolle, John oth Enthalten in Elsevier The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting 2011 Amsterdam [u.a.] (DE-627)ELV010662650 volume:483 year:2018 day:1 month:02 pages:285-290 extent:6 https://doi.org/10.1016/j.jcrysgro.2017.12.018 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_22 GBV_ILN_40 GBV_ILN_105 AR 483 2018 1 0201 285-290 6 |
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10.1016/j.jcrysgro.2017.12.018 doi GBV00000000000302_01.pica (DE-627)ELV041571045 (ELSEVIER)S0022-0248(17)30719-4 DE-627 ger DE-627 rakwb eng 610 VZ 570 540 VZ Kohen, David verfasserin aut Enhanced B doping in CVD-grown GeSn:B using B δ-doping layers 2018 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier • Increasing B doping reduces Sn incorporation, both for co-flow and δ-doping processes. • For a fixed GeSn composition, B δ-doping process reaches four times higher B concentration than co-flow process. • Highest chemical B concentration of 2 × 1021 cm−3 is achieved at Sn content ∼0.6%. • Highest active B concentration of 5 × 1020 cm−3 is achieved at Sn content ∼0.6%. • Reduced crystalline quality with B δ-doping process compared to co-flow process. A3. Chemical vapor deposition process Elsevier B1. Germanium tin Elsevier A1. Doping Elsevier A1. Delta-doping Elsevier Vohra, Anurag oth Loo, Roger oth Vandervorst, Wilfried oth Bhargava, Nupur oth Margetis, Joe oth Tolle, John oth Enthalten in Elsevier The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting 2011 Amsterdam [u.a.] (DE-627)ELV010662650 volume:483 year:2018 day:1 month:02 pages:285-290 extent:6 https://doi.org/10.1016/j.jcrysgro.2017.12.018 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_22 GBV_ILN_40 GBV_ILN_105 AR 483 2018 1 0201 285-290 6 |
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Enhanced B doping in CVD-grown GeSn:B using B δ-doping layers |
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• Increasing B doping reduces Sn incorporation, both for co-flow and δ-doping processes. • For a fixed GeSn composition, B δ-doping process reaches four times higher B concentration than co-flow process. • Highest chemical B concentration of 2 × 1021 cm−3 is achieved at Sn content ∼0.6%. • Highest active B concentration of 5 × 1020 cm−3 is achieved at Sn content ∼0.6%. • Reduced crystalline quality with B δ-doping process compared to co-flow process. |
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• Increasing B doping reduces Sn incorporation, both for co-flow and δ-doping processes. • For a fixed GeSn composition, B δ-doping process reaches four times higher B concentration than co-flow process. • Highest chemical B concentration of 2 × 1021 cm−3 is achieved at Sn content ∼0.6%. • Highest active B concentration of 5 × 1020 cm−3 is achieved at Sn content ∼0.6%. • Reduced crystalline quality with B δ-doping process compared to co-flow process. |
| abstract_unstemmed |
• Increasing B doping reduces Sn incorporation, both for co-flow and δ-doping processes. • For a fixed GeSn composition, B δ-doping process reaches four times higher B concentration than co-flow process. • Highest chemical B concentration of 2 × 1021 cm−3 is achieved at Sn content ∼0.6%. • Highest active B concentration of 5 × 1020 cm−3 is achieved at Sn content ∼0.6%. • Reduced crystalline quality with B δ-doping process compared to co-flow process. |
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Enhanced B doping in CVD-grown GeSn:B using B δ-doping layers |
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