α-SnSe thin film solar cells produced by selenization of magnetron sputtered tin precursors
The temperature-pressure-composition phase diagrams of Sn-Se system were calculated using the CALPHAD (CALculation of PHase Diagram) models. The phase diagrams showed the formation of α-SnSe phase at selenium-rich side with pressures lower than atmospheric pressure and in the temperature range of 30...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Minnam Reddy, Vasudeva Reddy [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2018transfer abstract |
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| Umfang: |
8 |
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| Übergeordnetes Werk: |
Enthalten in: Question answering method for infrastructure damage information retrieval from textual data using bidirectional encoder representations from transformers - Kim, Yohan ELSEVIER, 2021, an international journal devoted to photovoltaic, photothermal, and photochemical solar energy conversion, Amsterdam [u.a.] |
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| Übergeordnetes Werk: |
volume:176 ; year:2018 ; pages:251-258 ; extent:8 |
| Links: |
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| DOI / URN: |
10.1016/j.solmat.2017.12.003 |
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ELV041611888 |
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| 520 | |a The temperature-pressure-composition phase diagrams of Sn-Se system were calculated using the CALPHAD (CALculation of PHase Diagram) models. The phase diagrams showed the formation of α-SnSe phase at selenium-rich side with pressures lower than atmospheric pressure and in the temperature range of 300–500°C. As a first step, the effect of Sn/Se ratio on the phase formation was studied experimentally by selenization of tin metal precursor films using effusion cell evaporation. The Sn/Se ratio was varied by changing the selenium weight in the range of 0.5–1.5g. The physical properties of the films were studied with suitable characterization techniques and the obtained results showed the formation of single phase α-SnSe at 1.0g of selenium. Further, α-SnSe/CdS interface was studied by photoelectron yield spectroscopy (PYS), which showed a ‘type-I’ band alignment with a valence-band offset (∆Ev) of 1.3eV and a conduction-band offset (∆Ec) of 0.2eV. Finally, α-SnSe solar cells with a device structure of soda-lime glass (SLG)/Mo/α-SnSe/CdS/i-ZnO/Al:ZnO/Ni/Ag were fabricated and a power conversation efficiency of 1.42% was achieved at 1.0g of selenium. | ||
| 520 | |a The temperature-pressure-composition phase diagrams of Sn-Se system were calculated using the CALPHAD (CALculation of PHase Diagram) models. The phase diagrams showed the formation of α-SnSe phase at selenium-rich side with pressures lower than atmospheric pressure and in the temperature range of 300–500°C. As a first step, the effect of Sn/Se ratio on the phase formation was studied experimentally by selenization of tin metal precursor films using effusion cell evaporation. The Sn/Se ratio was varied by changing the selenium weight in the range of 0.5–1.5g. The physical properties of the films were studied with suitable characterization techniques and the obtained results showed the formation of single phase α-SnSe at 1.0g of selenium. Further, α-SnSe/CdS interface was studied by photoelectron yield spectroscopy (PYS), which showed a ‘type-I’ band alignment with a valence-band offset (∆Ev) of 1.3eV and a conduction-band offset (∆Ec) of 0.2eV. Finally, α-SnSe solar cells with a device structure of soda-lime glass (SLG)/Mo/α-SnSe/CdS/i-ZnO/Al:ZnO/Ni/Ag were fabricated and a power conversation efficiency of 1.42% was achieved at 1.0g of selenium. | ||
| 650 | 7 | |a Thin film solar cell |2 Elsevier | |
| 650 | 7 | |a Band alignment |2 Elsevier | |
| 650 | 7 | |a Phase diagram |2 Elsevier | |
| 650 | 7 | |a α-SnSe |2 Elsevier | |
| 650 | 7 | |a Two-stage selenization process |2 Elsevier | |
| 700 | 1 | |a Lindwall, Greta |4 oth | |
| 700 | 1 | |a Pejjai, Babu |4 oth | |
| 700 | 1 | |a Gedi, Sreedevi |4 oth | |
| 700 | 1 | |a Kotte, Tulasi Ramakrishna Reddy |4 oth | |
| 700 | 1 | |a Sugiyama, Mutsumi |4 oth | |
| 700 | 1 | |a Liu, Zi-Kui |4 oth | |
| 700 | 1 | |a Park, Chinho |4 oth | |
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10.1016/j.solmat.2017.12.003 doi GBV00000000000518.pica (DE-627)ELV041611888 (ELSEVIER)S0927-0248(17)30651-7 DE-627 ger DE-627 rakwb eng 690 VZ 56.03 bkl Minnam Reddy, Vasudeva Reddy verfasserin aut α-SnSe thin film solar cells produced by selenization of magnetron sputtered tin precursors 2018transfer abstract 8 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The temperature-pressure-composition phase diagrams of Sn-Se system were calculated using the CALPHAD (CALculation of PHase Diagram) models. The phase diagrams showed the formation of α-SnSe phase at selenium-rich side with pressures lower than atmospheric pressure and in the temperature range of 300–500°C. As a first step, the effect of Sn/Se ratio on the phase formation was studied experimentally by selenization of tin metal precursor films using effusion cell evaporation. The Sn/Se ratio was varied by changing the selenium weight in the range of 0.5–1.5g. The physical properties of the films were studied with suitable characterization techniques and the obtained results showed the formation of single phase α-SnSe at 1.0g of selenium. Further, α-SnSe/CdS interface was studied by photoelectron yield spectroscopy (PYS), which showed a ‘type-I’ band alignment with a valence-band offset (∆Ev) of 1.3eV and a conduction-band offset (∆Ec) of 0.2eV. Finally, α-SnSe solar cells with a device structure of soda-lime glass (SLG)/Mo/α-SnSe/CdS/i-ZnO/Al:ZnO/Ni/Ag were fabricated and a power conversation efficiency of 1.42% was achieved at 1.0g of selenium. The temperature-pressure-composition phase diagrams of Sn-Se system were calculated using the CALPHAD (CALculation of PHase Diagram) models. The phase diagrams showed the formation of α-SnSe phase at selenium-rich side with pressures lower than atmospheric pressure and in the temperature range of 300–500°C. As a first step, the effect of Sn/Se ratio on the phase formation was studied experimentally by selenization of tin metal precursor films using effusion cell evaporation. The Sn/Se ratio was varied by changing the selenium weight in the range of 0.5–1.5g. The physical properties of the films were studied with suitable characterization techniques and the obtained results showed the formation of single phase α-SnSe at 1.0g of selenium. Further, α-SnSe/CdS interface was studied by photoelectron yield spectroscopy (PYS), which showed a ‘type-I’ band alignment with a valence-band offset (∆Ev) of 1.3eV and a conduction-band offset (∆Ec) of 0.2eV. Finally, α-SnSe solar cells with a device structure of soda-lime glass (SLG)/Mo/α-SnSe/CdS/i-ZnO/Al:ZnO/Ni/Ag were fabricated and a power conversation efficiency of 1.42% was achieved at 1.0g of selenium. Thin film solar cell Elsevier Band alignment Elsevier Phase diagram Elsevier α-SnSe Elsevier Two-stage selenization process Elsevier Lindwall, Greta oth Pejjai, Babu oth Gedi, Sreedevi oth Kotte, Tulasi Ramakrishna Reddy oth Sugiyama, Mutsumi oth Liu, Zi-Kui oth Park, Chinho oth Enthalten in NH, Elsevier Kim, Yohan ELSEVIER Question answering method for infrastructure damage information retrieval from textual data using bidirectional encoder representations from transformers 2021 an international journal devoted to photovoltaic, photothermal, and photochemical solar energy conversion Amsterdam [u.a.] (DE-627)ELV00721202X volume:176 year:2018 pages:251-258 extent:8 https://doi.org/10.1016/j.solmat.2017.12.003 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.03 Methoden im Bauingenieurwesen VZ AR 176 2018 251-258 8 |
| spelling |
10.1016/j.solmat.2017.12.003 doi GBV00000000000518.pica (DE-627)ELV041611888 (ELSEVIER)S0927-0248(17)30651-7 DE-627 ger DE-627 rakwb eng 690 VZ 56.03 bkl Minnam Reddy, Vasudeva Reddy verfasserin aut α-SnSe thin film solar cells produced by selenization of magnetron sputtered tin precursors 2018transfer abstract 8 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The temperature-pressure-composition phase diagrams of Sn-Se system were calculated using the CALPHAD (CALculation of PHase Diagram) models. The phase diagrams showed the formation of α-SnSe phase at selenium-rich side with pressures lower than atmospheric pressure and in the temperature range of 300–500°C. As a first step, the effect of Sn/Se ratio on the phase formation was studied experimentally by selenization of tin metal precursor films using effusion cell evaporation. The Sn/Se ratio was varied by changing the selenium weight in the range of 0.5–1.5g. The physical properties of the films were studied with suitable characterization techniques and the obtained results showed the formation of single phase α-SnSe at 1.0g of selenium. Further, α-SnSe/CdS interface was studied by photoelectron yield spectroscopy (PYS), which showed a ‘type-I’ band alignment with a valence-band offset (∆Ev) of 1.3eV and a conduction-band offset (∆Ec) of 0.2eV. Finally, α-SnSe solar cells with a device structure of soda-lime glass (SLG)/Mo/α-SnSe/CdS/i-ZnO/Al:ZnO/Ni/Ag were fabricated and a power conversation efficiency of 1.42% was achieved at 1.0g of selenium. The temperature-pressure-composition phase diagrams of Sn-Se system were calculated using the CALPHAD (CALculation of PHase Diagram) models. The phase diagrams showed the formation of α-SnSe phase at selenium-rich side with pressures lower than atmospheric pressure and in the temperature range of 300–500°C. As a first step, the effect of Sn/Se ratio on the phase formation was studied experimentally by selenization of tin metal precursor films using effusion cell evaporation. The Sn/Se ratio was varied by changing the selenium weight in the range of 0.5–1.5g. The physical properties of the films were studied with suitable characterization techniques and the obtained results showed the formation of single phase α-SnSe at 1.0g of selenium. Further, α-SnSe/CdS interface was studied by photoelectron yield spectroscopy (PYS), which showed a ‘type-I’ band alignment with a valence-band offset (∆Ev) of 1.3eV and a conduction-band offset (∆Ec) of 0.2eV. Finally, α-SnSe solar cells with a device structure of soda-lime glass (SLG)/Mo/α-SnSe/CdS/i-ZnO/Al:ZnO/Ni/Ag were fabricated and a power conversation efficiency of 1.42% was achieved at 1.0g of selenium. Thin film solar cell Elsevier Band alignment Elsevier Phase diagram Elsevier α-SnSe Elsevier Two-stage selenization process Elsevier Lindwall, Greta oth Pejjai, Babu oth Gedi, Sreedevi oth Kotte, Tulasi Ramakrishna Reddy oth Sugiyama, Mutsumi oth Liu, Zi-Kui oth Park, Chinho oth Enthalten in NH, Elsevier Kim, Yohan ELSEVIER Question answering method for infrastructure damage information retrieval from textual data using bidirectional encoder representations from transformers 2021 an international journal devoted to photovoltaic, photothermal, and photochemical solar energy conversion Amsterdam [u.a.] (DE-627)ELV00721202X volume:176 year:2018 pages:251-258 extent:8 https://doi.org/10.1016/j.solmat.2017.12.003 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.03 Methoden im Bauingenieurwesen VZ AR 176 2018 251-258 8 |
| allfields_unstemmed |
10.1016/j.solmat.2017.12.003 doi GBV00000000000518.pica (DE-627)ELV041611888 (ELSEVIER)S0927-0248(17)30651-7 DE-627 ger DE-627 rakwb eng 690 VZ 56.03 bkl Minnam Reddy, Vasudeva Reddy verfasserin aut α-SnSe thin film solar cells produced by selenization of magnetron sputtered tin precursors 2018transfer abstract 8 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The temperature-pressure-composition phase diagrams of Sn-Se system were calculated using the CALPHAD (CALculation of PHase Diagram) models. The phase diagrams showed the formation of α-SnSe phase at selenium-rich side with pressures lower than atmospheric pressure and in the temperature range of 300–500°C. As a first step, the effect of Sn/Se ratio on the phase formation was studied experimentally by selenization of tin metal precursor films using effusion cell evaporation. The Sn/Se ratio was varied by changing the selenium weight in the range of 0.5–1.5g. The physical properties of the films were studied with suitable characterization techniques and the obtained results showed the formation of single phase α-SnSe at 1.0g of selenium. Further, α-SnSe/CdS interface was studied by photoelectron yield spectroscopy (PYS), which showed a ‘type-I’ band alignment with a valence-band offset (∆Ev) of 1.3eV and a conduction-band offset (∆Ec) of 0.2eV. Finally, α-SnSe solar cells with a device structure of soda-lime glass (SLG)/Mo/α-SnSe/CdS/i-ZnO/Al:ZnO/Ni/Ag were fabricated and a power conversation efficiency of 1.42% was achieved at 1.0g of selenium. The temperature-pressure-composition phase diagrams of Sn-Se system were calculated using the CALPHAD (CALculation of PHase Diagram) models. The phase diagrams showed the formation of α-SnSe phase at selenium-rich side with pressures lower than atmospheric pressure and in the temperature range of 300–500°C. As a first step, the effect of Sn/Se ratio on the phase formation was studied experimentally by selenization of tin metal precursor films using effusion cell evaporation. The Sn/Se ratio was varied by changing the selenium weight in the range of 0.5–1.5g. The physical properties of the films were studied with suitable characterization techniques and the obtained results showed the formation of single phase α-SnSe at 1.0g of selenium. Further, α-SnSe/CdS interface was studied by photoelectron yield spectroscopy (PYS), which showed a ‘type-I’ band alignment with a valence-band offset (∆Ev) of 1.3eV and a conduction-band offset (∆Ec) of 0.2eV. Finally, α-SnSe solar cells with a device structure of soda-lime glass (SLG)/Mo/α-SnSe/CdS/i-ZnO/Al:ZnO/Ni/Ag were fabricated and a power conversation efficiency of 1.42% was achieved at 1.0g of selenium. Thin film solar cell Elsevier Band alignment Elsevier Phase diagram Elsevier α-SnSe Elsevier Two-stage selenization process Elsevier Lindwall, Greta oth Pejjai, Babu oth Gedi, Sreedevi oth Kotte, Tulasi Ramakrishna Reddy oth Sugiyama, Mutsumi oth Liu, Zi-Kui oth Park, Chinho oth Enthalten in NH, Elsevier Kim, Yohan ELSEVIER Question answering method for infrastructure damage information retrieval from textual data using bidirectional encoder representations from transformers 2021 an international journal devoted to photovoltaic, photothermal, and photochemical solar energy conversion Amsterdam [u.a.] (DE-627)ELV00721202X volume:176 year:2018 pages:251-258 extent:8 https://doi.org/10.1016/j.solmat.2017.12.003 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.03 Methoden im Bauingenieurwesen VZ AR 176 2018 251-258 8 |
| allfieldsGer |
10.1016/j.solmat.2017.12.003 doi GBV00000000000518.pica (DE-627)ELV041611888 (ELSEVIER)S0927-0248(17)30651-7 DE-627 ger DE-627 rakwb eng 690 VZ 56.03 bkl Minnam Reddy, Vasudeva Reddy verfasserin aut α-SnSe thin film solar cells produced by selenization of magnetron sputtered tin precursors 2018transfer abstract 8 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The temperature-pressure-composition phase diagrams of Sn-Se system were calculated using the CALPHAD (CALculation of PHase Diagram) models. The phase diagrams showed the formation of α-SnSe phase at selenium-rich side with pressures lower than atmospheric pressure and in the temperature range of 300–500°C. As a first step, the effect of Sn/Se ratio on the phase formation was studied experimentally by selenization of tin metal precursor films using effusion cell evaporation. The Sn/Se ratio was varied by changing the selenium weight in the range of 0.5–1.5g. The physical properties of the films were studied with suitable characterization techniques and the obtained results showed the formation of single phase α-SnSe at 1.0g of selenium. Further, α-SnSe/CdS interface was studied by photoelectron yield spectroscopy (PYS), which showed a ‘type-I’ band alignment with a valence-band offset (∆Ev) of 1.3eV and a conduction-band offset (∆Ec) of 0.2eV. Finally, α-SnSe solar cells with a device structure of soda-lime glass (SLG)/Mo/α-SnSe/CdS/i-ZnO/Al:ZnO/Ni/Ag were fabricated and a power conversation efficiency of 1.42% was achieved at 1.0g of selenium. The temperature-pressure-composition phase diagrams of Sn-Se system were calculated using the CALPHAD (CALculation of PHase Diagram) models. The phase diagrams showed the formation of α-SnSe phase at selenium-rich side with pressures lower than atmospheric pressure and in the temperature range of 300–500°C. As a first step, the effect of Sn/Se ratio on the phase formation was studied experimentally by selenization of tin metal precursor films using effusion cell evaporation. The Sn/Se ratio was varied by changing the selenium weight in the range of 0.5–1.5g. The physical properties of the films were studied with suitable characterization techniques and the obtained results showed the formation of single phase α-SnSe at 1.0g of selenium. Further, α-SnSe/CdS interface was studied by photoelectron yield spectroscopy (PYS), which showed a ‘type-I’ band alignment with a valence-band offset (∆Ev) of 1.3eV and a conduction-band offset (∆Ec) of 0.2eV. Finally, α-SnSe solar cells with a device structure of soda-lime glass (SLG)/Mo/α-SnSe/CdS/i-ZnO/Al:ZnO/Ni/Ag were fabricated and a power conversation efficiency of 1.42% was achieved at 1.0g of selenium. Thin film solar cell Elsevier Band alignment Elsevier Phase diagram Elsevier α-SnSe Elsevier Two-stage selenization process Elsevier Lindwall, Greta oth Pejjai, Babu oth Gedi, Sreedevi oth Kotte, Tulasi Ramakrishna Reddy oth Sugiyama, Mutsumi oth Liu, Zi-Kui oth Park, Chinho oth Enthalten in NH, Elsevier Kim, Yohan ELSEVIER Question answering method for infrastructure damage information retrieval from textual data using bidirectional encoder representations from transformers 2021 an international journal devoted to photovoltaic, photothermal, and photochemical solar energy conversion Amsterdam [u.a.] (DE-627)ELV00721202X volume:176 year:2018 pages:251-258 extent:8 https://doi.org/10.1016/j.solmat.2017.12.003 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.03 Methoden im Bauingenieurwesen VZ AR 176 2018 251-258 8 |
| allfieldsSound |
10.1016/j.solmat.2017.12.003 doi GBV00000000000518.pica (DE-627)ELV041611888 (ELSEVIER)S0927-0248(17)30651-7 DE-627 ger DE-627 rakwb eng 690 VZ 56.03 bkl Minnam Reddy, Vasudeva Reddy verfasserin aut α-SnSe thin film solar cells produced by selenization of magnetron sputtered tin precursors 2018transfer abstract 8 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The temperature-pressure-composition phase diagrams of Sn-Se system were calculated using the CALPHAD (CALculation of PHase Diagram) models. The phase diagrams showed the formation of α-SnSe phase at selenium-rich side with pressures lower than atmospheric pressure and in the temperature range of 300–500°C. As a first step, the effect of Sn/Se ratio on the phase formation was studied experimentally by selenization of tin metal precursor films using effusion cell evaporation. The Sn/Se ratio was varied by changing the selenium weight in the range of 0.5–1.5g. The physical properties of the films were studied with suitable characterization techniques and the obtained results showed the formation of single phase α-SnSe at 1.0g of selenium. Further, α-SnSe/CdS interface was studied by photoelectron yield spectroscopy (PYS), which showed a ‘type-I’ band alignment with a valence-band offset (∆Ev) of 1.3eV and a conduction-band offset (∆Ec) of 0.2eV. Finally, α-SnSe solar cells with a device structure of soda-lime glass (SLG)/Mo/α-SnSe/CdS/i-ZnO/Al:ZnO/Ni/Ag were fabricated and a power conversation efficiency of 1.42% was achieved at 1.0g of selenium. The temperature-pressure-composition phase diagrams of Sn-Se system were calculated using the CALPHAD (CALculation of PHase Diagram) models. The phase diagrams showed the formation of α-SnSe phase at selenium-rich side with pressures lower than atmospheric pressure and in the temperature range of 300–500°C. As a first step, the effect of Sn/Se ratio on the phase formation was studied experimentally by selenization of tin metal precursor films using effusion cell evaporation. The Sn/Se ratio was varied by changing the selenium weight in the range of 0.5–1.5g. The physical properties of the films were studied with suitable characterization techniques and the obtained results showed the formation of single phase α-SnSe at 1.0g of selenium. Further, α-SnSe/CdS interface was studied by photoelectron yield spectroscopy (PYS), which showed a ‘type-I’ band alignment with a valence-band offset (∆Ev) of 1.3eV and a conduction-band offset (∆Ec) of 0.2eV. Finally, α-SnSe solar cells with a device structure of soda-lime glass (SLG)/Mo/α-SnSe/CdS/i-ZnO/Al:ZnO/Ni/Ag were fabricated and a power conversation efficiency of 1.42% was achieved at 1.0g of selenium. Thin film solar cell Elsevier Band alignment Elsevier Phase diagram Elsevier α-SnSe Elsevier Two-stage selenization process Elsevier Lindwall, Greta oth Pejjai, Babu oth Gedi, Sreedevi oth Kotte, Tulasi Ramakrishna Reddy oth Sugiyama, Mutsumi oth Liu, Zi-Kui oth Park, Chinho oth Enthalten in NH, Elsevier Kim, Yohan ELSEVIER Question answering method for infrastructure damage information retrieval from textual data using bidirectional encoder representations from transformers 2021 an international journal devoted to photovoltaic, photothermal, and photochemical solar energy conversion Amsterdam [u.a.] (DE-627)ELV00721202X volume:176 year:2018 pages:251-258 extent:8 https://doi.org/10.1016/j.solmat.2017.12.003 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.03 Methoden im Bauingenieurwesen VZ AR 176 2018 251-258 8 |
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α-snse thin film solar cells produced by selenization of magnetron sputtered tin precursors |
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α-SnSe thin film solar cells produced by selenization of magnetron sputtered tin precursors |
| abstract |
The temperature-pressure-composition phase diagrams of Sn-Se system were calculated using the CALPHAD (CALculation of PHase Diagram) models. The phase diagrams showed the formation of α-SnSe phase at selenium-rich side with pressures lower than atmospheric pressure and in the temperature range of 300–500°C. As a first step, the effect of Sn/Se ratio on the phase formation was studied experimentally by selenization of tin metal precursor films using effusion cell evaporation. The Sn/Se ratio was varied by changing the selenium weight in the range of 0.5–1.5g. The physical properties of the films were studied with suitable characterization techniques and the obtained results showed the formation of single phase α-SnSe at 1.0g of selenium. Further, α-SnSe/CdS interface was studied by photoelectron yield spectroscopy (PYS), which showed a ‘type-I’ band alignment with a valence-band offset (∆Ev) of 1.3eV and a conduction-band offset (∆Ec) of 0.2eV. Finally, α-SnSe solar cells with a device structure of soda-lime glass (SLG)/Mo/α-SnSe/CdS/i-ZnO/Al:ZnO/Ni/Ag were fabricated and a power conversation efficiency of 1.42% was achieved at 1.0g of selenium. |
| abstractGer |
The temperature-pressure-composition phase diagrams of Sn-Se system were calculated using the CALPHAD (CALculation of PHase Diagram) models. The phase diagrams showed the formation of α-SnSe phase at selenium-rich side with pressures lower than atmospheric pressure and in the temperature range of 300–500°C. As a first step, the effect of Sn/Se ratio on the phase formation was studied experimentally by selenization of tin metal precursor films using effusion cell evaporation. The Sn/Se ratio was varied by changing the selenium weight in the range of 0.5–1.5g. The physical properties of the films were studied with suitable characterization techniques and the obtained results showed the formation of single phase α-SnSe at 1.0g of selenium. Further, α-SnSe/CdS interface was studied by photoelectron yield spectroscopy (PYS), which showed a ‘type-I’ band alignment with a valence-band offset (∆Ev) of 1.3eV and a conduction-band offset (∆Ec) of 0.2eV. Finally, α-SnSe solar cells with a device structure of soda-lime glass (SLG)/Mo/α-SnSe/CdS/i-ZnO/Al:ZnO/Ni/Ag were fabricated and a power conversation efficiency of 1.42% was achieved at 1.0g of selenium. |
| abstract_unstemmed |
The temperature-pressure-composition phase diagrams of Sn-Se system were calculated using the CALPHAD (CALculation of PHase Diagram) models. The phase diagrams showed the formation of α-SnSe phase at selenium-rich side with pressures lower than atmospheric pressure and in the temperature range of 300–500°C. As a first step, the effect of Sn/Se ratio on the phase formation was studied experimentally by selenization of tin metal precursor films using effusion cell evaporation. The Sn/Se ratio was varied by changing the selenium weight in the range of 0.5–1.5g. The physical properties of the films were studied with suitable characterization techniques and the obtained results showed the formation of single phase α-SnSe at 1.0g of selenium. Further, α-SnSe/CdS interface was studied by photoelectron yield spectroscopy (PYS), which showed a ‘type-I’ band alignment with a valence-band offset (∆Ev) of 1.3eV and a conduction-band offset (∆Ec) of 0.2eV. Finally, α-SnSe solar cells with a device structure of soda-lime glass (SLG)/Mo/α-SnSe/CdS/i-ZnO/Al:ZnO/Ni/Ag were fabricated and a power conversation efficiency of 1.42% was achieved at 1.0g of selenium. |
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α-SnSe thin film solar cells produced by selenization of magnetron sputtered tin precursors |
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