Properties of mixed phase silicon-oxide-based passivating contacts for silicon solar cells
We investigate the properties of an electron selective front contact based on a phosphorous doped mixed-phase SiO x /Si layer stack at device level. The addition of the SiO x phase to the Si layer targets reduced optical absorption, pursuing the goal of a broad-band transparent full-area passivating...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Mack, I. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2018transfer abstract |
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| Umfang: |
6 |
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| Übergeordnetes Werk: |
Enthalten in: Question answering method for infrastructure damage information retrieval from textual data using bidirectional encoder representations from transformers - Kim, Yohan ELSEVIER, 2021, an international journal devoted to photovoltaic, photothermal, and photochemical solar energy conversion, Amsterdam [u.a.] |
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| Übergeordnetes Werk: |
volume:181 ; year:2018 ; pages:9-14 ; extent:6 |
| Links: |
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| DOI / URN: |
10.1016/j.solmat.2017.12.030 |
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ELV042733812 |
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| 520 | |a We investigate the properties of an electron selective front contact based on a phosphorous doped mixed-phase SiO x /Si layer stack at device level. The addition of the SiO x phase to the Si layer targets reduced optical absorption, pursuing the goal of a broad-band transparent full-area passivating contact for front-side application. To demonstrate the validity of our approach we realised a planar hybrid solar cell with the mixed-phase SiO x /Si-based passivating contact on the front side and a hydrogenated amorphous (i/p) silicon heterojunction as rear hole-selective contact. With this structure, we obtained a V OC of 691mV, a J SC of 33.9mA/ cm 2 , a fill factor of 79.4% and an efficiency of 18.6% on a planar n-type FZ Si-wafer. | ||
| 520 | |a We investigate the properties of an electron selective front contact based on a phosphorous doped mixed-phase SiO x /Si layer stack at device level. The addition of the SiO x phase to the Si layer targets reduced optical absorption, pursuing the goal of a broad-band transparent full-area passivating contact for front-side application. To demonstrate the validity of our approach we realised a planar hybrid solar cell with the mixed-phase SiO x /Si-based passivating contact on the front side and a hydrogenated amorphous (i/p) silicon heterojunction as rear hole-selective contact. With this structure, we obtained a V OC of 691mV, a J SC of 33.9mA/ cm 2 , a fill factor of 79.4% and an efficiency of 18.6% on a planar n-type FZ Si-wafer. | ||
| 650 | 7 | |a Silicon solar cells |2 Elsevier | |
| 650 | 7 | |a Temperature dependence |2 Elsevier | |
| 650 | 7 | |a Series resistivity |2 Elsevier | |
| 650 | 7 | |a Passivating contact |2 Elsevier | |
| 650 | 7 | |a Silicon oxide |2 Elsevier | |
| 700 | 1 | |a Stuckelberger, J. |4 oth | |
| 700 | 1 | |a Wyss, P. |4 oth | |
| 700 | 1 | |a Nogay, G. |4 oth | |
| 700 | 1 | |a Jeangros, Q. |4 oth | |
| 700 | 1 | |a Horzel, J. |4 oth | |
| 700 | 1 | |a Allebé, C. |4 oth | |
| 700 | 1 | |a Despeisse, M. |4 oth | |
| 700 | 1 | |a Haug, F.-J. |4 oth | |
| 700 | 1 | |a Ingenito, A. |4 oth | |
| 700 | 1 | |a Löper, P. |4 oth | |
| 700 | 1 | |a Ballif, C. |4 oth | |
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10.1016/j.solmat.2017.12.030 doi GBV00000000000520.pica (DE-627)ELV042733812 (ELSEVIER)S0927-0248(17)30680-3 DE-627 ger DE-627 rakwb eng 690 VZ 56.03 bkl Mack, I. verfasserin aut Properties of mixed phase silicon-oxide-based passivating contacts for silicon solar cells 2018transfer abstract 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier We investigate the properties of an electron selective front contact based on a phosphorous doped mixed-phase SiO x /Si layer stack at device level. The addition of the SiO x phase to the Si layer targets reduced optical absorption, pursuing the goal of a broad-band transparent full-area passivating contact for front-side application. To demonstrate the validity of our approach we realised a planar hybrid solar cell with the mixed-phase SiO x /Si-based passivating contact on the front side and a hydrogenated amorphous (i/p) silicon heterojunction as rear hole-selective contact. With this structure, we obtained a V OC of 691mV, a J SC of 33.9mA/ cm 2 , a fill factor of 79.4% and an efficiency of 18.6% on a planar n-type FZ Si-wafer. We investigate the properties of an electron selective front contact based on a phosphorous doped mixed-phase SiO x /Si layer stack at device level. The addition of the SiO x phase to the Si layer targets reduced optical absorption, pursuing the goal of a broad-band transparent full-area passivating contact for front-side application. To demonstrate the validity of our approach we realised a planar hybrid solar cell with the mixed-phase SiO x /Si-based passivating contact on the front side and a hydrogenated amorphous (i/p) silicon heterojunction as rear hole-selective contact. With this structure, we obtained a V OC of 691mV, a J SC of 33.9mA/ cm 2 , a fill factor of 79.4% and an efficiency of 18.6% on a planar n-type FZ Si-wafer. Silicon solar cells Elsevier Temperature dependence Elsevier Series resistivity Elsevier Passivating contact Elsevier Silicon oxide Elsevier Stuckelberger, J. oth Wyss, P. oth Nogay, G. oth Jeangros, Q. oth Horzel, J. oth Allebé, C. oth Despeisse, M. oth Haug, F.-J. oth Ingenito, A. oth Löper, P. oth Ballif, C. oth Enthalten in NH, Elsevier Kim, Yohan ELSEVIER Question answering method for infrastructure damage information retrieval from textual data using bidirectional encoder representations from transformers 2021 an international journal devoted to photovoltaic, photothermal, and photochemical solar energy conversion Amsterdam [u.a.] (DE-627)ELV00721202X volume:181 year:2018 pages:9-14 extent:6 https://doi.org/10.1016/j.solmat.2017.12.030 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.03 Methoden im Bauingenieurwesen VZ AR 181 2018 9-14 6 |
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10.1016/j.solmat.2017.12.030 doi GBV00000000000520.pica (DE-627)ELV042733812 (ELSEVIER)S0927-0248(17)30680-3 DE-627 ger DE-627 rakwb eng 690 VZ 56.03 bkl Mack, I. verfasserin aut Properties of mixed phase silicon-oxide-based passivating contacts for silicon solar cells 2018transfer abstract 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier We investigate the properties of an electron selective front contact based on a phosphorous doped mixed-phase SiO x /Si layer stack at device level. The addition of the SiO x phase to the Si layer targets reduced optical absorption, pursuing the goal of a broad-band transparent full-area passivating contact for front-side application. To demonstrate the validity of our approach we realised a planar hybrid solar cell with the mixed-phase SiO x /Si-based passivating contact on the front side and a hydrogenated amorphous (i/p) silicon heterojunction as rear hole-selective contact. With this structure, we obtained a V OC of 691mV, a J SC of 33.9mA/ cm 2 , a fill factor of 79.4% and an efficiency of 18.6% on a planar n-type FZ Si-wafer. We investigate the properties of an electron selective front contact based on a phosphorous doped mixed-phase SiO x /Si layer stack at device level. The addition of the SiO x phase to the Si layer targets reduced optical absorption, pursuing the goal of a broad-band transparent full-area passivating contact for front-side application. To demonstrate the validity of our approach we realised a planar hybrid solar cell with the mixed-phase SiO x /Si-based passivating contact on the front side and a hydrogenated amorphous (i/p) silicon heterojunction as rear hole-selective contact. With this structure, we obtained a V OC of 691mV, a J SC of 33.9mA/ cm 2 , a fill factor of 79.4% and an efficiency of 18.6% on a planar n-type FZ Si-wafer. Silicon solar cells Elsevier Temperature dependence Elsevier Series resistivity Elsevier Passivating contact Elsevier Silicon oxide Elsevier Stuckelberger, J. oth Wyss, P. oth Nogay, G. oth Jeangros, Q. oth Horzel, J. oth Allebé, C. oth Despeisse, M. oth Haug, F.-J. oth Ingenito, A. oth Löper, P. oth Ballif, C. oth Enthalten in NH, Elsevier Kim, Yohan ELSEVIER Question answering method for infrastructure damage information retrieval from textual data using bidirectional encoder representations from transformers 2021 an international journal devoted to photovoltaic, photothermal, and photochemical solar energy conversion Amsterdam [u.a.] (DE-627)ELV00721202X volume:181 year:2018 pages:9-14 extent:6 https://doi.org/10.1016/j.solmat.2017.12.030 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.03 Methoden im Bauingenieurwesen VZ AR 181 2018 9-14 6 |
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10.1016/j.solmat.2017.12.030 doi GBV00000000000520.pica (DE-627)ELV042733812 (ELSEVIER)S0927-0248(17)30680-3 DE-627 ger DE-627 rakwb eng 690 VZ 56.03 bkl Mack, I. verfasserin aut Properties of mixed phase silicon-oxide-based passivating contacts for silicon solar cells 2018transfer abstract 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier We investigate the properties of an electron selective front contact based on a phosphorous doped mixed-phase SiO x /Si layer stack at device level. The addition of the SiO x phase to the Si layer targets reduced optical absorption, pursuing the goal of a broad-band transparent full-area passivating contact for front-side application. To demonstrate the validity of our approach we realised a planar hybrid solar cell with the mixed-phase SiO x /Si-based passivating contact on the front side and a hydrogenated amorphous (i/p) silicon heterojunction as rear hole-selective contact. With this structure, we obtained a V OC of 691mV, a J SC of 33.9mA/ cm 2 , a fill factor of 79.4% and an efficiency of 18.6% on a planar n-type FZ Si-wafer. We investigate the properties of an electron selective front contact based on a phosphorous doped mixed-phase SiO x /Si layer stack at device level. The addition of the SiO x phase to the Si layer targets reduced optical absorption, pursuing the goal of a broad-band transparent full-area passivating contact for front-side application. To demonstrate the validity of our approach we realised a planar hybrid solar cell with the mixed-phase SiO x /Si-based passivating contact on the front side and a hydrogenated amorphous (i/p) silicon heterojunction as rear hole-selective contact. With this structure, we obtained a V OC of 691mV, a J SC of 33.9mA/ cm 2 , a fill factor of 79.4% and an efficiency of 18.6% on a planar n-type FZ Si-wafer. Silicon solar cells Elsevier Temperature dependence Elsevier Series resistivity Elsevier Passivating contact Elsevier Silicon oxide Elsevier Stuckelberger, J. oth Wyss, P. oth Nogay, G. oth Jeangros, Q. oth Horzel, J. oth Allebé, C. oth Despeisse, M. oth Haug, F.-J. oth Ingenito, A. oth Löper, P. oth Ballif, C. oth Enthalten in NH, Elsevier Kim, Yohan ELSEVIER Question answering method for infrastructure damage information retrieval from textual data using bidirectional encoder representations from transformers 2021 an international journal devoted to photovoltaic, photothermal, and photochemical solar energy conversion Amsterdam [u.a.] (DE-627)ELV00721202X volume:181 year:2018 pages:9-14 extent:6 https://doi.org/10.1016/j.solmat.2017.12.030 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.03 Methoden im Bauingenieurwesen VZ AR 181 2018 9-14 6 |
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10.1016/j.solmat.2017.12.030 doi GBV00000000000520.pica (DE-627)ELV042733812 (ELSEVIER)S0927-0248(17)30680-3 DE-627 ger DE-627 rakwb eng 690 VZ 56.03 bkl Mack, I. verfasserin aut Properties of mixed phase silicon-oxide-based passivating contacts for silicon solar cells 2018transfer abstract 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier We investigate the properties of an electron selective front contact based on a phosphorous doped mixed-phase SiO x /Si layer stack at device level. The addition of the SiO x phase to the Si layer targets reduced optical absorption, pursuing the goal of a broad-band transparent full-area passivating contact for front-side application. To demonstrate the validity of our approach we realised a planar hybrid solar cell with the mixed-phase SiO x /Si-based passivating contact on the front side and a hydrogenated amorphous (i/p) silicon heterojunction as rear hole-selective contact. With this structure, we obtained a V OC of 691mV, a J SC of 33.9mA/ cm 2 , a fill factor of 79.4% and an efficiency of 18.6% on a planar n-type FZ Si-wafer. We investigate the properties of an electron selective front contact based on a phosphorous doped mixed-phase SiO x /Si layer stack at device level. The addition of the SiO x phase to the Si layer targets reduced optical absorption, pursuing the goal of a broad-band transparent full-area passivating contact for front-side application. To demonstrate the validity of our approach we realised a planar hybrid solar cell with the mixed-phase SiO x /Si-based passivating contact on the front side and a hydrogenated amorphous (i/p) silicon heterojunction as rear hole-selective contact. With this structure, we obtained a V OC of 691mV, a J SC of 33.9mA/ cm 2 , a fill factor of 79.4% and an efficiency of 18.6% on a planar n-type FZ Si-wafer. Silicon solar cells Elsevier Temperature dependence Elsevier Series resistivity Elsevier Passivating contact Elsevier Silicon oxide Elsevier Stuckelberger, J. oth Wyss, P. oth Nogay, G. oth Jeangros, Q. oth Horzel, J. oth Allebé, C. oth Despeisse, M. oth Haug, F.-J. oth Ingenito, A. oth Löper, P. oth Ballif, C. oth Enthalten in NH, Elsevier Kim, Yohan ELSEVIER Question answering method for infrastructure damage information retrieval from textual data using bidirectional encoder representations from transformers 2021 an international journal devoted to photovoltaic, photothermal, and photochemical solar energy conversion Amsterdam [u.a.] (DE-627)ELV00721202X volume:181 year:2018 pages:9-14 extent:6 https://doi.org/10.1016/j.solmat.2017.12.030 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.03 Methoden im Bauingenieurwesen VZ AR 181 2018 9-14 6 |
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10.1016/j.solmat.2017.12.030 doi GBV00000000000520.pica (DE-627)ELV042733812 (ELSEVIER)S0927-0248(17)30680-3 DE-627 ger DE-627 rakwb eng 690 VZ 56.03 bkl Mack, I. verfasserin aut Properties of mixed phase silicon-oxide-based passivating contacts for silicon solar cells 2018transfer abstract 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier We investigate the properties of an electron selective front contact based on a phosphorous doped mixed-phase SiO x /Si layer stack at device level. The addition of the SiO x phase to the Si layer targets reduced optical absorption, pursuing the goal of a broad-band transparent full-area passivating contact for front-side application. To demonstrate the validity of our approach we realised a planar hybrid solar cell with the mixed-phase SiO x /Si-based passivating contact on the front side and a hydrogenated amorphous (i/p) silicon heterojunction as rear hole-selective contact. With this structure, we obtained a V OC of 691mV, a J SC of 33.9mA/ cm 2 , a fill factor of 79.4% and an efficiency of 18.6% on a planar n-type FZ Si-wafer. We investigate the properties of an electron selective front contact based on a phosphorous doped mixed-phase SiO x /Si layer stack at device level. The addition of the SiO x phase to the Si layer targets reduced optical absorption, pursuing the goal of a broad-band transparent full-area passivating contact for front-side application. To demonstrate the validity of our approach we realised a planar hybrid solar cell with the mixed-phase SiO x /Si-based passivating contact on the front side and a hydrogenated amorphous (i/p) silicon heterojunction as rear hole-selective contact. With this structure, we obtained a V OC of 691mV, a J SC of 33.9mA/ cm 2 , a fill factor of 79.4% and an efficiency of 18.6% on a planar n-type FZ Si-wafer. Silicon solar cells Elsevier Temperature dependence Elsevier Series resistivity Elsevier Passivating contact Elsevier Silicon oxide Elsevier Stuckelberger, J. oth Wyss, P. oth Nogay, G. oth Jeangros, Q. oth Horzel, J. oth Allebé, C. oth Despeisse, M. oth Haug, F.-J. oth Ingenito, A. oth Löper, P. oth Ballif, C. oth Enthalten in NH, Elsevier Kim, Yohan ELSEVIER Question answering method for infrastructure damage information retrieval from textual data using bidirectional encoder representations from transformers 2021 an international journal devoted to photovoltaic, photothermal, and photochemical solar energy conversion Amsterdam [u.a.] (DE-627)ELV00721202X volume:181 year:2018 pages:9-14 extent:6 https://doi.org/10.1016/j.solmat.2017.12.030 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.03 Methoden im Bauingenieurwesen VZ AR 181 2018 9-14 6 |
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Properties of mixed phase silicon-oxide-based passivating contacts for silicon solar cells |
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We investigate the properties of an electron selective front contact based on a phosphorous doped mixed-phase SiO x /Si layer stack at device level. The addition of the SiO x phase to the Si layer targets reduced optical absorption, pursuing the goal of a broad-band transparent full-area passivating contact for front-side application. To demonstrate the validity of our approach we realised a planar hybrid solar cell with the mixed-phase SiO x /Si-based passivating contact on the front side and a hydrogenated amorphous (i/p) silicon heterojunction as rear hole-selective contact. With this structure, we obtained a V OC of 691mV, a J SC of 33.9mA/ cm 2 , a fill factor of 79.4% and an efficiency of 18.6% on a planar n-type FZ Si-wafer. |
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We investigate the properties of an electron selective front contact based on a phosphorous doped mixed-phase SiO x /Si layer stack at device level. The addition of the SiO x phase to the Si layer targets reduced optical absorption, pursuing the goal of a broad-band transparent full-area passivating contact for front-side application. To demonstrate the validity of our approach we realised a planar hybrid solar cell with the mixed-phase SiO x /Si-based passivating contact on the front side and a hydrogenated amorphous (i/p) silicon heterojunction as rear hole-selective contact. With this structure, we obtained a V OC of 691mV, a J SC of 33.9mA/ cm 2 , a fill factor of 79.4% and an efficiency of 18.6% on a planar n-type FZ Si-wafer. |
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We investigate the properties of an electron selective front contact based on a phosphorous doped mixed-phase SiO x /Si layer stack at device level. The addition of the SiO x phase to the Si layer targets reduced optical absorption, pursuing the goal of a broad-band transparent full-area passivating contact for front-side application. To demonstrate the validity of our approach we realised a planar hybrid solar cell with the mixed-phase SiO x /Si-based passivating contact on the front side and a hydrogenated amorphous (i/p) silicon heterojunction as rear hole-selective contact. With this structure, we obtained a V OC of 691mV, a J SC of 33.9mA/ cm 2 , a fill factor of 79.4% and an efficiency of 18.6% on a planar n-type FZ Si-wafer. |
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