Electrochemical synthesis of photoactive carbon-carbide structure on silicon in molten salt
Carbon-carbide coatings on silicon with a distinctively developed surface were electrochemically synthesized in molten CaCl2 using Si-SiO2 precursor and a graphite anode. Energy-dispersive X-ray spectroscopy showed approximately one quarter of the structure (in at.%) was composed of carbon. X-ray di...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Juzeliūnas, Eimutis [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2018transfer abstract |
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| Umfang: |
5 |
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| Übergeordnetes Werk: |
Enthalten in: A multi-objective model to configure an electronic reverse logistics network and third party selection - Tosarkani, Babak Mohamadpour ELSEVIER, 2018, Amsterdam [u.a.] |
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| Übergeordnetes Werk: |
volume:90 ; year:2018 ; pages:6-10 ; extent:5 |
| Links: |
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| DOI / URN: |
10.1016/j.elecom.2018.03.003 |
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| 520 | |a Carbon-carbide coatings on silicon with a distinctively developed surface were electrochemically synthesized in molten CaCl2 using Si-SiO2 precursor and a graphite anode. Energy-dispersive X-ray spectroscopy showed approximately one quarter of the structure (in at.%) was composed of carbon. X-ray diffraction identified crystalline phases of graphite, silicon carbide and carbonate. X-ray photoelectron spectroscopy identified the carbide/carbon concentration ratio varied from 0.2 in the external region of the structure to 0.7 at the silicon substrate boundary. Mott-Schottky analysis showed p-type semiconductivity of the structure with high density of charge carriers N > 1016 cm−3. The surfaces absorbed over 90% of white light in a broad region of wavelengths from 400 nm to 1100 nm. The obtained composite is promising for application as an antireflection and protective coating or a photoelectrode. | ||
| 520 | |a Carbon-carbide coatings on silicon with a distinctively developed surface were electrochemically synthesized in molten CaCl2 using Si-SiO2 precursor and a graphite anode. Energy-dispersive X-ray spectroscopy showed approximately one quarter of the structure (in at.%) was composed of carbon. X-ray diffraction identified crystalline phases of graphite, silicon carbide and carbonate. X-ray photoelectron spectroscopy identified the carbide/carbon concentration ratio varied from 0.2 in the external region of the structure to 0.7 at the silicon substrate boundary. Mott-Schottky analysis showed p-type semiconductivity of the structure with high density of charge carriers N > 1016 cm−3. The surfaces absorbed over 90% of white light in a broad region of wavelengths from 400 nm to 1100 nm. The obtained composite is promising for application as an antireflection and protective coating or a photoelectrode. | ||
| 700 | 1 | |a Fray, Derek J. |4 oth | |
| 700 | 1 | |a Kalinauskas, Putinas |4 oth | |
| 700 | 1 | |a Valsiūnas, Ignas |4 oth | |
| 700 | 1 | |a Niaura, Gediminas |4 oth | |
| 700 | 1 | |a Selskis, Algis |4 oth | |
| 700 | 1 | |a Jasulaitienė, Vitalija |4 oth | |
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10.1016/j.elecom.2018.03.003 doi GBV00000000000216A.pica (DE-627)ELV04286772X (ELSEVIER)S1388-2481(18)30056-0 DE-627 ger DE-627 rakwb eng 540 540 DE-600 690 330 VZ 43.35 bkl 85.35 bkl Juzeliūnas, Eimutis verfasserin aut Electrochemical synthesis of photoactive carbon-carbide structure on silicon in molten salt 2018transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Carbon-carbide coatings on silicon with a distinctively developed surface were electrochemically synthesized in molten CaCl2 using Si-SiO2 precursor and a graphite anode. Energy-dispersive X-ray spectroscopy showed approximately one quarter of the structure (in at.%) was composed of carbon. X-ray diffraction identified crystalline phases of graphite, silicon carbide and carbonate. X-ray photoelectron spectroscopy identified the carbide/carbon concentration ratio varied from 0.2 in the external region of the structure to 0.7 at the silicon substrate boundary. Mott-Schottky analysis showed p-type semiconductivity of the structure with high density of charge carriers N > 1016 cm−3. The surfaces absorbed over 90% of white light in a broad region of wavelengths from 400 nm to 1100 nm. The obtained composite is promising for application as an antireflection and protective coating or a photoelectrode. Carbon-carbide coatings on silicon with a distinctively developed surface were electrochemically synthesized in molten CaCl2 using Si-SiO2 precursor and a graphite anode. Energy-dispersive X-ray spectroscopy showed approximately one quarter of the structure (in at.%) was composed of carbon. X-ray diffraction identified crystalline phases of graphite, silicon carbide and carbonate. X-ray photoelectron spectroscopy identified the carbide/carbon concentration ratio varied from 0.2 in the external region of the structure to 0.7 at the silicon substrate boundary. Mott-Schottky analysis showed p-type semiconductivity of the structure with high density of charge carriers N > 1016 cm−3. The surfaces absorbed over 90% of white light in a broad region of wavelengths from 400 nm to 1100 nm. The obtained composite is promising for application as an antireflection and protective coating or a photoelectrode. Fray, Derek J. oth Kalinauskas, Putinas oth Valsiūnas, Ignas oth Niaura, Gediminas oth Selskis, Algis oth Jasulaitienė, Vitalija oth Enthalten in Elsevier Science Tosarkani, Babak Mohamadpour ELSEVIER A multi-objective model to configure an electronic reverse logistics network and third party selection 2018 Amsterdam [u.a.] (DE-627)ELV000764884 volume:90 year:2018 pages:6-10 extent:5 https://doi.org/10.1016/j.elecom.2018.03.003 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OPC-GGO 43.35 Umweltrichtlinien Umweltnormen VZ 85.35 Fertigung VZ AR 90 2018 6-10 5 045F 540 |
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10.1016/j.elecom.2018.03.003 doi GBV00000000000216A.pica (DE-627)ELV04286772X (ELSEVIER)S1388-2481(18)30056-0 DE-627 ger DE-627 rakwb eng 540 540 DE-600 690 330 VZ 43.35 bkl 85.35 bkl Juzeliūnas, Eimutis verfasserin aut Electrochemical synthesis of photoactive carbon-carbide structure on silicon in molten salt 2018transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Carbon-carbide coatings on silicon with a distinctively developed surface were electrochemically synthesized in molten CaCl2 using Si-SiO2 precursor and a graphite anode. Energy-dispersive X-ray spectroscopy showed approximately one quarter of the structure (in at.%) was composed of carbon. X-ray diffraction identified crystalline phases of graphite, silicon carbide and carbonate. X-ray photoelectron spectroscopy identified the carbide/carbon concentration ratio varied from 0.2 in the external region of the structure to 0.7 at the silicon substrate boundary. Mott-Schottky analysis showed p-type semiconductivity of the structure with high density of charge carriers N > 1016 cm−3. The surfaces absorbed over 90% of white light in a broad region of wavelengths from 400 nm to 1100 nm. The obtained composite is promising for application as an antireflection and protective coating or a photoelectrode. Carbon-carbide coatings on silicon with a distinctively developed surface were electrochemically synthesized in molten CaCl2 using Si-SiO2 precursor and a graphite anode. Energy-dispersive X-ray spectroscopy showed approximately one quarter of the structure (in at.%) was composed of carbon. X-ray diffraction identified crystalline phases of graphite, silicon carbide and carbonate. X-ray photoelectron spectroscopy identified the carbide/carbon concentration ratio varied from 0.2 in the external region of the structure to 0.7 at the silicon substrate boundary. Mott-Schottky analysis showed p-type semiconductivity of the structure with high density of charge carriers N > 1016 cm−3. The surfaces absorbed over 90% of white light in a broad region of wavelengths from 400 nm to 1100 nm. The obtained composite is promising for application as an antireflection and protective coating or a photoelectrode. Fray, Derek J. oth Kalinauskas, Putinas oth Valsiūnas, Ignas oth Niaura, Gediminas oth Selskis, Algis oth Jasulaitienė, Vitalija oth Enthalten in Elsevier Science Tosarkani, Babak Mohamadpour ELSEVIER A multi-objective model to configure an electronic reverse logistics network and third party selection 2018 Amsterdam [u.a.] (DE-627)ELV000764884 volume:90 year:2018 pages:6-10 extent:5 https://doi.org/10.1016/j.elecom.2018.03.003 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OPC-GGO 43.35 Umweltrichtlinien Umweltnormen VZ 85.35 Fertigung VZ AR 90 2018 6-10 5 045F 540 |
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10.1016/j.elecom.2018.03.003 doi GBV00000000000216A.pica (DE-627)ELV04286772X (ELSEVIER)S1388-2481(18)30056-0 DE-627 ger DE-627 rakwb eng 540 540 DE-600 690 330 VZ 43.35 bkl 85.35 bkl Juzeliūnas, Eimutis verfasserin aut Electrochemical synthesis of photoactive carbon-carbide structure on silicon in molten salt 2018transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Carbon-carbide coatings on silicon with a distinctively developed surface were electrochemically synthesized in molten CaCl2 using Si-SiO2 precursor and a graphite anode. Energy-dispersive X-ray spectroscopy showed approximately one quarter of the structure (in at.%) was composed of carbon. X-ray diffraction identified crystalline phases of graphite, silicon carbide and carbonate. X-ray photoelectron spectroscopy identified the carbide/carbon concentration ratio varied from 0.2 in the external region of the structure to 0.7 at the silicon substrate boundary. Mott-Schottky analysis showed p-type semiconductivity of the structure with high density of charge carriers N > 1016 cm−3. The surfaces absorbed over 90% of white light in a broad region of wavelengths from 400 nm to 1100 nm. The obtained composite is promising for application as an antireflection and protective coating or a photoelectrode. Carbon-carbide coatings on silicon with a distinctively developed surface were electrochemically synthesized in molten CaCl2 using Si-SiO2 precursor and a graphite anode. Energy-dispersive X-ray spectroscopy showed approximately one quarter of the structure (in at.%) was composed of carbon. X-ray diffraction identified crystalline phases of graphite, silicon carbide and carbonate. X-ray photoelectron spectroscopy identified the carbide/carbon concentration ratio varied from 0.2 in the external region of the structure to 0.7 at the silicon substrate boundary. Mott-Schottky analysis showed p-type semiconductivity of the structure with high density of charge carriers N > 1016 cm−3. The surfaces absorbed over 90% of white light in a broad region of wavelengths from 400 nm to 1100 nm. The obtained composite is promising for application as an antireflection and protective coating or a photoelectrode. Fray, Derek J. oth Kalinauskas, Putinas oth Valsiūnas, Ignas oth Niaura, Gediminas oth Selskis, Algis oth Jasulaitienė, Vitalija oth Enthalten in Elsevier Science Tosarkani, Babak Mohamadpour ELSEVIER A multi-objective model to configure an electronic reverse logistics network and third party selection 2018 Amsterdam [u.a.] (DE-627)ELV000764884 volume:90 year:2018 pages:6-10 extent:5 https://doi.org/10.1016/j.elecom.2018.03.003 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OPC-GGO 43.35 Umweltrichtlinien Umweltnormen VZ 85.35 Fertigung VZ AR 90 2018 6-10 5 045F 540 |
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10.1016/j.elecom.2018.03.003 doi GBV00000000000216A.pica (DE-627)ELV04286772X (ELSEVIER)S1388-2481(18)30056-0 DE-627 ger DE-627 rakwb eng 540 540 DE-600 690 330 VZ 43.35 bkl 85.35 bkl Juzeliūnas, Eimutis verfasserin aut Electrochemical synthesis of photoactive carbon-carbide structure on silicon in molten salt 2018transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Carbon-carbide coatings on silicon with a distinctively developed surface were electrochemically synthesized in molten CaCl2 using Si-SiO2 precursor and a graphite anode. Energy-dispersive X-ray spectroscopy showed approximately one quarter of the structure (in at.%) was composed of carbon. X-ray diffraction identified crystalline phases of graphite, silicon carbide and carbonate. X-ray photoelectron spectroscopy identified the carbide/carbon concentration ratio varied from 0.2 in the external region of the structure to 0.7 at the silicon substrate boundary. Mott-Schottky analysis showed p-type semiconductivity of the structure with high density of charge carriers N > 1016 cm−3. The surfaces absorbed over 90% of white light in a broad region of wavelengths from 400 nm to 1100 nm. The obtained composite is promising for application as an antireflection and protective coating or a photoelectrode. Carbon-carbide coatings on silicon with a distinctively developed surface were electrochemically synthesized in molten CaCl2 using Si-SiO2 precursor and a graphite anode. Energy-dispersive X-ray spectroscopy showed approximately one quarter of the structure (in at.%) was composed of carbon. X-ray diffraction identified crystalline phases of graphite, silicon carbide and carbonate. X-ray photoelectron spectroscopy identified the carbide/carbon concentration ratio varied from 0.2 in the external region of the structure to 0.7 at the silicon substrate boundary. Mott-Schottky analysis showed p-type semiconductivity of the structure with high density of charge carriers N > 1016 cm−3. The surfaces absorbed over 90% of white light in a broad region of wavelengths from 400 nm to 1100 nm. The obtained composite is promising for application as an antireflection and protective coating or a photoelectrode. Fray, Derek J. oth Kalinauskas, Putinas oth Valsiūnas, Ignas oth Niaura, Gediminas oth Selskis, Algis oth Jasulaitienė, Vitalija oth Enthalten in Elsevier Science Tosarkani, Babak Mohamadpour ELSEVIER A multi-objective model to configure an electronic reverse logistics network and third party selection 2018 Amsterdam [u.a.] (DE-627)ELV000764884 volume:90 year:2018 pages:6-10 extent:5 https://doi.org/10.1016/j.elecom.2018.03.003 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OPC-GGO 43.35 Umweltrichtlinien Umweltnormen VZ 85.35 Fertigung VZ AR 90 2018 6-10 5 045F 540 |
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10.1016/j.elecom.2018.03.003 doi GBV00000000000216A.pica (DE-627)ELV04286772X (ELSEVIER)S1388-2481(18)30056-0 DE-627 ger DE-627 rakwb eng 540 540 DE-600 690 330 VZ 43.35 bkl 85.35 bkl Juzeliūnas, Eimutis verfasserin aut Electrochemical synthesis of photoactive carbon-carbide structure on silicon in molten salt 2018transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Carbon-carbide coatings on silicon with a distinctively developed surface were electrochemically synthesized in molten CaCl2 using Si-SiO2 precursor and a graphite anode. Energy-dispersive X-ray spectroscopy showed approximately one quarter of the structure (in at.%) was composed of carbon. X-ray diffraction identified crystalline phases of graphite, silicon carbide and carbonate. X-ray photoelectron spectroscopy identified the carbide/carbon concentration ratio varied from 0.2 in the external region of the structure to 0.7 at the silicon substrate boundary. Mott-Schottky analysis showed p-type semiconductivity of the structure with high density of charge carriers N > 1016 cm−3. The surfaces absorbed over 90% of white light in a broad region of wavelengths from 400 nm to 1100 nm. The obtained composite is promising for application as an antireflection and protective coating or a photoelectrode. Carbon-carbide coatings on silicon with a distinctively developed surface were electrochemically synthesized in molten CaCl2 using Si-SiO2 precursor and a graphite anode. Energy-dispersive X-ray spectroscopy showed approximately one quarter of the structure (in at.%) was composed of carbon. X-ray diffraction identified crystalline phases of graphite, silicon carbide and carbonate. X-ray photoelectron spectroscopy identified the carbide/carbon concentration ratio varied from 0.2 in the external region of the structure to 0.7 at the silicon substrate boundary. Mott-Schottky analysis showed p-type semiconductivity of the structure with high density of charge carriers N > 1016 cm−3. The surfaces absorbed over 90% of white light in a broad region of wavelengths from 400 nm to 1100 nm. The obtained composite is promising for application as an antireflection and protective coating or a photoelectrode. Fray, Derek J. oth Kalinauskas, Putinas oth Valsiūnas, Ignas oth Niaura, Gediminas oth Selskis, Algis oth Jasulaitienė, Vitalija oth Enthalten in Elsevier Science Tosarkani, Babak Mohamadpour ELSEVIER A multi-objective model to configure an electronic reverse logistics network and third party selection 2018 Amsterdam [u.a.] (DE-627)ELV000764884 volume:90 year:2018 pages:6-10 extent:5 https://doi.org/10.1016/j.elecom.2018.03.003 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OPC-GGO 43.35 Umweltrichtlinien Umweltnormen VZ 85.35 Fertigung VZ AR 90 2018 6-10 5 045F 540 |
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electrochemical synthesis of photoactive carbon-carbide structure on silicon in molten salt |
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Electrochemical synthesis of photoactive carbon-carbide structure on silicon in molten salt |
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Carbon-carbide coatings on silicon with a distinctively developed surface were electrochemically synthesized in molten CaCl2 using Si-SiO2 precursor and a graphite anode. Energy-dispersive X-ray spectroscopy showed approximately one quarter of the structure (in at.%) was composed of carbon. X-ray diffraction identified crystalline phases of graphite, silicon carbide and carbonate. X-ray photoelectron spectroscopy identified the carbide/carbon concentration ratio varied from 0.2 in the external region of the structure to 0.7 at the silicon substrate boundary. Mott-Schottky analysis showed p-type semiconductivity of the structure with high density of charge carriers N > 1016 cm−3. The surfaces absorbed over 90% of white light in a broad region of wavelengths from 400 nm to 1100 nm. The obtained composite is promising for application as an antireflection and protective coating or a photoelectrode. |
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Carbon-carbide coatings on silicon with a distinctively developed surface were electrochemically synthesized in molten CaCl2 using Si-SiO2 precursor and a graphite anode. Energy-dispersive X-ray spectroscopy showed approximately one quarter of the structure (in at.%) was composed of carbon. X-ray diffraction identified crystalline phases of graphite, silicon carbide and carbonate. X-ray photoelectron spectroscopy identified the carbide/carbon concentration ratio varied from 0.2 in the external region of the structure to 0.7 at the silicon substrate boundary. Mott-Schottky analysis showed p-type semiconductivity of the structure with high density of charge carriers N > 1016 cm−3. The surfaces absorbed over 90% of white light in a broad region of wavelengths from 400 nm to 1100 nm. The obtained composite is promising for application as an antireflection and protective coating or a photoelectrode. |
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Carbon-carbide coatings on silicon with a distinctively developed surface were electrochemically synthesized in molten CaCl2 using Si-SiO2 precursor and a graphite anode. Energy-dispersive X-ray spectroscopy showed approximately one quarter of the structure (in at.%) was composed of carbon. X-ray diffraction identified crystalline phases of graphite, silicon carbide and carbonate. X-ray photoelectron spectroscopy identified the carbide/carbon concentration ratio varied from 0.2 in the external region of the structure to 0.7 at the silicon substrate boundary. Mott-Schottky analysis showed p-type semiconductivity of the structure with high density of charge carriers N > 1016 cm−3. The surfaces absorbed over 90% of white light in a broad region of wavelengths from 400 nm to 1100 nm. The obtained composite is promising for application as an antireflection and protective coating or a photoelectrode. |
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Electrochemical synthesis of photoactive carbon-carbide structure on silicon in molten salt |
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