Terahertz response of a field-effect transistor loaded with a reactive component

• We present the Terahertz response of FET connected to reactive componants. • The model using the equivalent admittances calculated in our previous article: IEEE Transactions on Terahertz Science and Technology, vol. 5, NO. 4 (2015). • The results present the voltage gain spectrum of differents cas...
Ausführliche Beschreibung

Gespeichert in:
Autor*in:

Mammeri, Abdel Majid [verfasserIn]

Mahi, Fatima Zohra

Marinchio, Hugues

Palermo, Cristophe

Varani, Luca

Format:

E-Artikel

Sprache:

Englisch

Erschienen:

2018

Schlagwörter:

Voltage gain

Field-effect transistor

Resonant circuit

TeraHertz frequency (THz)

Plasma oscillations

Umfang:

7

Übergeordnetes Werk:

Enthalten in: Increases in soil sequestered carbon under conservation agriculture cropping decrease the estimated greenhouse gas emissions of wetland rice using life cycle assessment - Alam, Md Khairul ELSEVIER, 2019, SSE : an international journal, Oxford [u.a.]

Übergeordnetes Werk:

volume:146 ; year:2018 ; pages:21-27 ; extent:7

Links:

Volltext

DOI / URN:

10.1016/j.sse.2018.04.010

Katalog-ID:

ELV043367895

Nicht das Richtige dabei?

Schreiben Sie uns!