Structural, optoelectronic and mechanical properties of PECVD Si-C-N films: An effect of substrate bias
Structural, optoelectronic and mechanical properties of amorphous silicon carbon nitride (Si-C-N) thin films produced by plasma enhanced chemical vapor deposition (PECVD) at different negative substrate biases (Ud) are studied. The films are characterized by X-ray diffraction, atomic force microscop...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Kozak, A.O. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2018transfer abstract |
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| Schlagwörter: |
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| Umfang: |
8 |
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| Übergeordnetes Werk: |
Enthalten in: Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate - Narattha, Chalermphan ELSEVIER, 2022, Amsterdam [u.a.] |
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| Übergeordnetes Werk: |
volume:88 ; year:2018 ; pages:65-72 ; extent:8 |
| Links: |
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| DOI / URN: |
10.1016/j.mssp.2018.07.023 |
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ELV043968864 |
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| 245 | 1 | 0 | |a Structural, optoelectronic and mechanical properties of PECVD Si-C-N films: An effect of substrate bias |
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| 520 | |a Structural, optoelectronic and mechanical properties of amorphous silicon carbon nitride (Si-C-N) thin films produced by plasma enhanced chemical vapor deposition (PECVD) at different negative substrate biases (Ud) are studied. The films are characterized by X-ray diffraction, atomic force microscopy, Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, optical transmittance spectroscopy, nanoindentation as well using the results of the measurements of photoluminescence (PL) and PL excitation (PLE) spectra. All deposited films are found to be X-ray amorphous. An increase in Ud leads to: a smoothing of the film surface; a decrease of the transparency; an increase of refractive index from 1.69 to 1.92; a decrease of the energy gap from 4.15 to 2.38 eV; an increase in nanohardness and elastic modulus from 14 GPa to 24 GPa and from 147 GPa to 190 GPa, respectively. These results were explained in terms of the bonding configuration from XPS and FTIR measurements. The PL spectra of the films deposited at lower negative substrate bias have one PL band in the region between 530 and 540 nm, whereas the PL spectra of the films deposited at higher negative substrate bias show two PL bands at 530–570 nm and 640–650 nm. On the basis of the PLE data, it was shown that these PL bands are related to the electronic recombination between the conduction band and the valence bands and their tails within the amorphous N-rich and C-rich Si-C-N-O-H networks. | ||
| 520 | |a Structural, optoelectronic and mechanical properties of amorphous silicon carbon nitride (Si-C-N) thin films produced by plasma enhanced chemical vapor deposition (PECVD) at different negative substrate biases (Ud) are studied. The films are characterized by X-ray diffraction, atomic force microscopy, Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, optical transmittance spectroscopy, nanoindentation as well using the results of the measurements of photoluminescence (PL) and PL excitation (PLE) spectra. All deposited films are found to be X-ray amorphous. An increase in Ud leads to: a smoothing of the film surface; a decrease of the transparency; an increase of refractive index from 1.69 to 1.92; a decrease of the energy gap from 4.15 to 2.38 eV; an increase in nanohardness and elastic modulus from 14 GPa to 24 GPa and from 147 GPa to 190 GPa, respectively. These results were explained in terms of the bonding configuration from XPS and FTIR measurements. The PL spectra of the films deposited at lower negative substrate bias have one PL band in the region between 530 and 540 nm, whereas the PL spectra of the films deposited at higher negative substrate bias show two PL bands at 530–570 nm and 640–650 nm. On the basis of the PLE data, it was shown that these PL bands are related to the electronic recombination between the conduction band and the valence bands and their tails within the amorphous N-rich and C-rich Si-C-N-O-H networks. | ||
| 650 | 7 | |a Photoluminescence |2 Elsevier | |
| 650 | 7 | |a Photoluminescence excitation |2 Elsevier | |
| 650 | 7 | |a Nanoindentaion |2 Elsevier | |
| 650 | 7 | |a Chemical bonding |2 Elsevier | |
| 650 | 7 | |a Amorphous Si-C-N films |2 Elsevier | |
| 650 | 7 | |a Plasma-enhanced chemical vapor deposition |2 Elsevier | |
| 700 | 1 | |a Ivashchenko, V.I. |4 oth | |
| 700 | 1 | |a Porada, O.K. |4 oth | |
| 700 | 1 | |a Ivashchenko, L.A. |4 oth | |
| 700 | 1 | |a Tomila, T.V. |4 oth | |
| 700 | 1 | |a Manjara, V.S. |4 oth | |
| 700 | 1 | |a Klishevych, G.V. |4 oth | |
| 773 | 0 | 8 | |i Enthalten in |n Elsevier Science |a Narattha, Chalermphan ELSEVIER |t Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate |d 2022 |g Amsterdam [u.a.] |w (DE-627)ELV007709056 |
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10.1016/j.mssp.2018.07.023 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001073.pica (DE-627)ELV043968864 (ELSEVIER)S1369-8001(18)30642-5 DE-627 ger DE-627 rakwb eng 690 VZ 56.45 bkl Kozak, A.O. verfasserin aut Structural, optoelectronic and mechanical properties of PECVD Si-C-N films: An effect of substrate bias 2018transfer abstract 8 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Structural, optoelectronic and mechanical properties of amorphous silicon carbon nitride (Si-C-N) thin films produced by plasma enhanced chemical vapor deposition (PECVD) at different negative substrate biases (Ud) are studied. The films are characterized by X-ray diffraction, atomic force microscopy, Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, optical transmittance spectroscopy, nanoindentation as well using the results of the measurements of photoluminescence (PL) and PL excitation (PLE) spectra. All deposited films are found to be X-ray amorphous. An increase in Ud leads to: a smoothing of the film surface; a decrease of the transparency; an increase of refractive index from 1.69 to 1.92; a decrease of the energy gap from 4.15 to 2.38 eV; an increase in nanohardness and elastic modulus from 14 GPa to 24 GPa and from 147 GPa to 190 GPa, respectively. These results were explained in terms of the bonding configuration from XPS and FTIR measurements. The PL spectra of the films deposited at lower negative substrate bias have one PL band in the region between 530 and 540 nm, whereas the PL spectra of the films deposited at higher negative substrate bias show two PL bands at 530–570 nm and 640–650 nm. On the basis of the PLE data, it was shown that these PL bands are related to the electronic recombination between the conduction band and the valence bands and their tails within the amorphous N-rich and C-rich Si-C-N-O-H networks. Structural, optoelectronic and mechanical properties of amorphous silicon carbon nitride (Si-C-N) thin films produced by plasma enhanced chemical vapor deposition (PECVD) at different negative substrate biases (Ud) are studied. The films are characterized by X-ray diffraction, atomic force microscopy, Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, optical transmittance spectroscopy, nanoindentation as well using the results of the measurements of photoluminescence (PL) and PL excitation (PLE) spectra. All deposited films are found to be X-ray amorphous. An increase in Ud leads to: a smoothing of the film surface; a decrease of the transparency; an increase of refractive index from 1.69 to 1.92; a decrease of the energy gap from 4.15 to 2.38 eV; an increase in nanohardness and elastic modulus from 14 GPa to 24 GPa and from 147 GPa to 190 GPa, respectively. These results were explained in terms of the bonding configuration from XPS and FTIR measurements. The PL spectra of the films deposited at lower negative substrate bias have one PL band in the region between 530 and 540 nm, whereas the PL spectra of the films deposited at higher negative substrate bias show two PL bands at 530–570 nm and 640–650 nm. On the basis of the PLE data, it was shown that these PL bands are related to the electronic recombination between the conduction band and the valence bands and their tails within the amorphous N-rich and C-rich Si-C-N-O-H networks. Photoluminescence Elsevier Photoluminescence excitation Elsevier Nanoindentaion Elsevier Chemical bonding Elsevier Amorphous Si-C-N films Elsevier Plasma-enhanced chemical vapor deposition Elsevier Ivashchenko, V.I. oth Porada, O.K. oth Ivashchenko, L.A. oth Tomila, T.V. oth Manjara, V.S. oth Klishevych, G.V. oth Enthalten in Elsevier Science Narattha, Chalermphan ELSEVIER Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate 2022 Amsterdam [u.a.] (DE-627)ELV007709056 volume:88 year:2018 pages:65-72 extent:8 https://doi.org/10.1016/j.mssp.2018.07.023 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.45 Baustoffkunde VZ AR 88 2018 65-72 8 |
| spelling |
10.1016/j.mssp.2018.07.023 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001073.pica (DE-627)ELV043968864 (ELSEVIER)S1369-8001(18)30642-5 DE-627 ger DE-627 rakwb eng 690 VZ 56.45 bkl Kozak, A.O. verfasserin aut Structural, optoelectronic and mechanical properties of PECVD Si-C-N films: An effect of substrate bias 2018transfer abstract 8 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Structural, optoelectronic and mechanical properties of amorphous silicon carbon nitride (Si-C-N) thin films produced by plasma enhanced chemical vapor deposition (PECVD) at different negative substrate biases (Ud) are studied. The films are characterized by X-ray diffraction, atomic force microscopy, Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, optical transmittance spectroscopy, nanoindentation as well using the results of the measurements of photoluminescence (PL) and PL excitation (PLE) spectra. All deposited films are found to be X-ray amorphous. An increase in Ud leads to: a smoothing of the film surface; a decrease of the transparency; an increase of refractive index from 1.69 to 1.92; a decrease of the energy gap from 4.15 to 2.38 eV; an increase in nanohardness and elastic modulus from 14 GPa to 24 GPa and from 147 GPa to 190 GPa, respectively. These results were explained in terms of the bonding configuration from XPS and FTIR measurements. The PL spectra of the films deposited at lower negative substrate bias have one PL band in the region between 530 and 540 nm, whereas the PL spectra of the films deposited at higher negative substrate bias show two PL bands at 530–570 nm and 640–650 nm. On the basis of the PLE data, it was shown that these PL bands are related to the electronic recombination between the conduction band and the valence bands and their tails within the amorphous N-rich and C-rich Si-C-N-O-H networks. Structural, optoelectronic and mechanical properties of amorphous silicon carbon nitride (Si-C-N) thin films produced by plasma enhanced chemical vapor deposition (PECVD) at different negative substrate biases (Ud) are studied. The films are characterized by X-ray diffraction, atomic force microscopy, Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, optical transmittance spectroscopy, nanoindentation as well using the results of the measurements of photoluminescence (PL) and PL excitation (PLE) spectra. All deposited films are found to be X-ray amorphous. An increase in Ud leads to: a smoothing of the film surface; a decrease of the transparency; an increase of refractive index from 1.69 to 1.92; a decrease of the energy gap from 4.15 to 2.38 eV; an increase in nanohardness and elastic modulus from 14 GPa to 24 GPa and from 147 GPa to 190 GPa, respectively. These results were explained in terms of the bonding configuration from XPS and FTIR measurements. The PL spectra of the films deposited at lower negative substrate bias have one PL band in the region between 530 and 540 nm, whereas the PL spectra of the films deposited at higher negative substrate bias show two PL bands at 530–570 nm and 640–650 nm. On the basis of the PLE data, it was shown that these PL bands are related to the electronic recombination between the conduction band and the valence bands and their tails within the amorphous N-rich and C-rich Si-C-N-O-H networks. Photoluminescence Elsevier Photoluminescence excitation Elsevier Nanoindentaion Elsevier Chemical bonding Elsevier Amorphous Si-C-N films Elsevier Plasma-enhanced chemical vapor deposition Elsevier Ivashchenko, V.I. oth Porada, O.K. oth Ivashchenko, L.A. oth Tomila, T.V. oth Manjara, V.S. oth Klishevych, G.V. oth Enthalten in Elsevier Science Narattha, Chalermphan ELSEVIER Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate 2022 Amsterdam [u.a.] (DE-627)ELV007709056 volume:88 year:2018 pages:65-72 extent:8 https://doi.org/10.1016/j.mssp.2018.07.023 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.45 Baustoffkunde VZ AR 88 2018 65-72 8 |
| allfields_unstemmed |
10.1016/j.mssp.2018.07.023 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001073.pica (DE-627)ELV043968864 (ELSEVIER)S1369-8001(18)30642-5 DE-627 ger DE-627 rakwb eng 690 VZ 56.45 bkl Kozak, A.O. verfasserin aut Structural, optoelectronic and mechanical properties of PECVD Si-C-N films: An effect of substrate bias 2018transfer abstract 8 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Structural, optoelectronic and mechanical properties of amorphous silicon carbon nitride (Si-C-N) thin films produced by plasma enhanced chemical vapor deposition (PECVD) at different negative substrate biases (Ud) are studied. The films are characterized by X-ray diffraction, atomic force microscopy, Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, optical transmittance spectroscopy, nanoindentation as well using the results of the measurements of photoluminescence (PL) and PL excitation (PLE) spectra. All deposited films are found to be X-ray amorphous. An increase in Ud leads to: a smoothing of the film surface; a decrease of the transparency; an increase of refractive index from 1.69 to 1.92; a decrease of the energy gap from 4.15 to 2.38 eV; an increase in nanohardness and elastic modulus from 14 GPa to 24 GPa and from 147 GPa to 190 GPa, respectively. These results were explained in terms of the bonding configuration from XPS and FTIR measurements. The PL spectra of the films deposited at lower negative substrate bias have one PL band in the region between 530 and 540 nm, whereas the PL spectra of the films deposited at higher negative substrate bias show two PL bands at 530–570 nm and 640–650 nm. On the basis of the PLE data, it was shown that these PL bands are related to the electronic recombination between the conduction band and the valence bands and their tails within the amorphous N-rich and C-rich Si-C-N-O-H networks. Structural, optoelectronic and mechanical properties of amorphous silicon carbon nitride (Si-C-N) thin films produced by plasma enhanced chemical vapor deposition (PECVD) at different negative substrate biases (Ud) are studied. The films are characterized by X-ray diffraction, atomic force microscopy, Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, optical transmittance spectroscopy, nanoindentation as well using the results of the measurements of photoluminescence (PL) and PL excitation (PLE) spectra. All deposited films are found to be X-ray amorphous. An increase in Ud leads to: a smoothing of the film surface; a decrease of the transparency; an increase of refractive index from 1.69 to 1.92; a decrease of the energy gap from 4.15 to 2.38 eV; an increase in nanohardness and elastic modulus from 14 GPa to 24 GPa and from 147 GPa to 190 GPa, respectively. These results were explained in terms of the bonding configuration from XPS and FTIR measurements. The PL spectra of the films deposited at lower negative substrate bias have one PL band in the region between 530 and 540 nm, whereas the PL spectra of the films deposited at higher negative substrate bias show two PL bands at 530–570 nm and 640–650 nm. On the basis of the PLE data, it was shown that these PL bands are related to the electronic recombination between the conduction band and the valence bands and their tails within the amorphous N-rich and C-rich Si-C-N-O-H networks. Photoluminescence Elsevier Photoluminescence excitation Elsevier Nanoindentaion Elsevier Chemical bonding Elsevier Amorphous Si-C-N films Elsevier Plasma-enhanced chemical vapor deposition Elsevier Ivashchenko, V.I. oth Porada, O.K. oth Ivashchenko, L.A. oth Tomila, T.V. oth Manjara, V.S. oth Klishevych, G.V. oth Enthalten in Elsevier Science Narattha, Chalermphan ELSEVIER Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate 2022 Amsterdam [u.a.] (DE-627)ELV007709056 volume:88 year:2018 pages:65-72 extent:8 https://doi.org/10.1016/j.mssp.2018.07.023 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.45 Baustoffkunde VZ AR 88 2018 65-72 8 |
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10.1016/j.mssp.2018.07.023 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001073.pica (DE-627)ELV043968864 (ELSEVIER)S1369-8001(18)30642-5 DE-627 ger DE-627 rakwb eng 690 VZ 56.45 bkl Kozak, A.O. verfasserin aut Structural, optoelectronic and mechanical properties of PECVD Si-C-N films: An effect of substrate bias 2018transfer abstract 8 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Structural, optoelectronic and mechanical properties of amorphous silicon carbon nitride (Si-C-N) thin films produced by plasma enhanced chemical vapor deposition (PECVD) at different negative substrate biases (Ud) are studied. The films are characterized by X-ray diffraction, atomic force microscopy, Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, optical transmittance spectroscopy, nanoindentation as well using the results of the measurements of photoluminescence (PL) and PL excitation (PLE) spectra. All deposited films are found to be X-ray amorphous. An increase in Ud leads to: a smoothing of the film surface; a decrease of the transparency; an increase of refractive index from 1.69 to 1.92; a decrease of the energy gap from 4.15 to 2.38 eV; an increase in nanohardness and elastic modulus from 14 GPa to 24 GPa and from 147 GPa to 190 GPa, respectively. These results were explained in terms of the bonding configuration from XPS and FTIR measurements. The PL spectra of the films deposited at lower negative substrate bias have one PL band in the region between 530 and 540 nm, whereas the PL spectra of the films deposited at higher negative substrate bias show two PL bands at 530–570 nm and 640–650 nm. On the basis of the PLE data, it was shown that these PL bands are related to the electronic recombination between the conduction band and the valence bands and their tails within the amorphous N-rich and C-rich Si-C-N-O-H networks. Structural, optoelectronic and mechanical properties of amorphous silicon carbon nitride (Si-C-N) thin films produced by plasma enhanced chemical vapor deposition (PECVD) at different negative substrate biases (Ud) are studied. The films are characterized by X-ray diffraction, atomic force microscopy, Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, optical transmittance spectroscopy, nanoindentation as well using the results of the measurements of photoluminescence (PL) and PL excitation (PLE) spectra. All deposited films are found to be X-ray amorphous. An increase in Ud leads to: a smoothing of the film surface; a decrease of the transparency; an increase of refractive index from 1.69 to 1.92; a decrease of the energy gap from 4.15 to 2.38 eV; an increase in nanohardness and elastic modulus from 14 GPa to 24 GPa and from 147 GPa to 190 GPa, respectively. These results were explained in terms of the bonding configuration from XPS and FTIR measurements. The PL spectra of the films deposited at lower negative substrate bias have one PL band in the region between 530 and 540 nm, whereas the PL spectra of the films deposited at higher negative substrate bias show two PL bands at 530–570 nm and 640–650 nm. On the basis of the PLE data, it was shown that these PL bands are related to the electronic recombination between the conduction band and the valence bands and their tails within the amorphous N-rich and C-rich Si-C-N-O-H networks. Photoluminescence Elsevier Photoluminescence excitation Elsevier Nanoindentaion Elsevier Chemical bonding Elsevier Amorphous Si-C-N films Elsevier Plasma-enhanced chemical vapor deposition Elsevier Ivashchenko, V.I. oth Porada, O.K. oth Ivashchenko, L.A. oth Tomila, T.V. oth Manjara, V.S. oth Klishevych, G.V. oth Enthalten in Elsevier Science Narattha, Chalermphan ELSEVIER Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate 2022 Amsterdam [u.a.] (DE-627)ELV007709056 volume:88 year:2018 pages:65-72 extent:8 https://doi.org/10.1016/j.mssp.2018.07.023 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.45 Baustoffkunde VZ AR 88 2018 65-72 8 |
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10.1016/j.mssp.2018.07.023 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001073.pica (DE-627)ELV043968864 (ELSEVIER)S1369-8001(18)30642-5 DE-627 ger DE-627 rakwb eng 690 VZ 56.45 bkl Kozak, A.O. verfasserin aut Structural, optoelectronic and mechanical properties of PECVD Si-C-N films: An effect of substrate bias 2018transfer abstract 8 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Structural, optoelectronic and mechanical properties of amorphous silicon carbon nitride (Si-C-N) thin films produced by plasma enhanced chemical vapor deposition (PECVD) at different negative substrate biases (Ud) are studied. The films are characterized by X-ray diffraction, atomic force microscopy, Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, optical transmittance spectroscopy, nanoindentation as well using the results of the measurements of photoluminescence (PL) and PL excitation (PLE) spectra. All deposited films are found to be X-ray amorphous. An increase in Ud leads to: a smoothing of the film surface; a decrease of the transparency; an increase of refractive index from 1.69 to 1.92; a decrease of the energy gap from 4.15 to 2.38 eV; an increase in nanohardness and elastic modulus from 14 GPa to 24 GPa and from 147 GPa to 190 GPa, respectively. These results were explained in terms of the bonding configuration from XPS and FTIR measurements. The PL spectra of the films deposited at lower negative substrate bias have one PL band in the region between 530 and 540 nm, whereas the PL spectra of the films deposited at higher negative substrate bias show two PL bands at 530–570 nm and 640–650 nm. On the basis of the PLE data, it was shown that these PL bands are related to the electronic recombination between the conduction band and the valence bands and their tails within the amorphous N-rich and C-rich Si-C-N-O-H networks. Structural, optoelectronic and mechanical properties of amorphous silicon carbon nitride (Si-C-N) thin films produced by plasma enhanced chemical vapor deposition (PECVD) at different negative substrate biases (Ud) are studied. The films are characterized by X-ray diffraction, atomic force microscopy, Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, optical transmittance spectroscopy, nanoindentation as well using the results of the measurements of photoluminescence (PL) and PL excitation (PLE) spectra. All deposited films are found to be X-ray amorphous. An increase in Ud leads to: a smoothing of the film surface; a decrease of the transparency; an increase of refractive index from 1.69 to 1.92; a decrease of the energy gap from 4.15 to 2.38 eV; an increase in nanohardness and elastic modulus from 14 GPa to 24 GPa and from 147 GPa to 190 GPa, respectively. These results were explained in terms of the bonding configuration from XPS and FTIR measurements. The PL spectra of the films deposited at lower negative substrate bias have one PL band in the region between 530 and 540 nm, whereas the PL spectra of the films deposited at higher negative substrate bias show two PL bands at 530–570 nm and 640–650 nm. On the basis of the PLE data, it was shown that these PL bands are related to the electronic recombination between the conduction band and the valence bands and their tails within the amorphous N-rich and C-rich Si-C-N-O-H networks. Photoluminescence Elsevier Photoluminescence excitation Elsevier Nanoindentaion Elsevier Chemical bonding Elsevier Amorphous Si-C-N films Elsevier Plasma-enhanced chemical vapor deposition Elsevier Ivashchenko, V.I. oth Porada, O.K. oth Ivashchenko, L.A. oth Tomila, T.V. oth Manjara, V.S. oth Klishevych, G.V. oth Enthalten in Elsevier Science Narattha, Chalermphan ELSEVIER Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate 2022 Amsterdam [u.a.] (DE-627)ELV007709056 volume:88 year:2018 pages:65-72 extent:8 https://doi.org/10.1016/j.mssp.2018.07.023 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.45 Baustoffkunde VZ AR 88 2018 65-72 8 |
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Structural, optoelectronic and mechanical properties of PECVD Si-C-N films: An effect of substrate bias |
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Structural, optoelectronic and mechanical properties of amorphous silicon carbon nitride (Si-C-N) thin films produced by plasma enhanced chemical vapor deposition (PECVD) at different negative substrate biases (Ud) are studied. The films are characterized by X-ray diffraction, atomic force microscopy, Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, optical transmittance spectroscopy, nanoindentation as well using the results of the measurements of photoluminescence (PL) and PL excitation (PLE) spectra. All deposited films are found to be X-ray amorphous. An increase in Ud leads to: a smoothing of the film surface; a decrease of the transparency; an increase of refractive index from 1.69 to 1.92; a decrease of the energy gap from 4.15 to 2.38 eV; an increase in nanohardness and elastic modulus from 14 GPa to 24 GPa and from 147 GPa to 190 GPa, respectively. These results were explained in terms of the bonding configuration from XPS and FTIR measurements. The PL spectra of the films deposited at lower negative substrate bias have one PL band in the region between 530 and 540 nm, whereas the PL spectra of the films deposited at higher negative substrate bias show two PL bands at 530–570 nm and 640–650 nm. On the basis of the PLE data, it was shown that these PL bands are related to the electronic recombination between the conduction band and the valence bands and their tails within the amorphous N-rich and C-rich Si-C-N-O-H networks. |
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Structural, optoelectronic and mechanical properties of amorphous silicon carbon nitride (Si-C-N) thin films produced by plasma enhanced chemical vapor deposition (PECVD) at different negative substrate biases (Ud) are studied. The films are characterized by X-ray diffraction, atomic force microscopy, Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, optical transmittance spectroscopy, nanoindentation as well using the results of the measurements of photoluminescence (PL) and PL excitation (PLE) spectra. All deposited films are found to be X-ray amorphous. An increase in Ud leads to: a smoothing of the film surface; a decrease of the transparency; an increase of refractive index from 1.69 to 1.92; a decrease of the energy gap from 4.15 to 2.38 eV; an increase in nanohardness and elastic modulus from 14 GPa to 24 GPa and from 147 GPa to 190 GPa, respectively. These results were explained in terms of the bonding configuration from XPS and FTIR measurements. The PL spectra of the films deposited at lower negative substrate bias have one PL band in the region between 530 and 540 nm, whereas the PL spectra of the films deposited at higher negative substrate bias show two PL bands at 530–570 nm and 640–650 nm. On the basis of the PLE data, it was shown that these PL bands are related to the electronic recombination between the conduction band and the valence bands and their tails within the amorphous N-rich and C-rich Si-C-N-O-H networks. |
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Structural, optoelectronic and mechanical properties of amorphous silicon carbon nitride (Si-C-N) thin films produced by plasma enhanced chemical vapor deposition (PECVD) at different negative substrate biases (Ud) are studied. The films are characterized by X-ray diffraction, atomic force microscopy, Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, optical transmittance spectroscopy, nanoindentation as well using the results of the measurements of photoluminescence (PL) and PL excitation (PLE) spectra. All deposited films are found to be X-ray amorphous. An increase in Ud leads to: a smoothing of the film surface; a decrease of the transparency; an increase of refractive index from 1.69 to 1.92; a decrease of the energy gap from 4.15 to 2.38 eV; an increase in nanohardness and elastic modulus from 14 GPa to 24 GPa and from 147 GPa to 190 GPa, respectively. These results were explained in terms of the bonding configuration from XPS and FTIR measurements. The PL spectra of the films deposited at lower negative substrate bias have one PL band in the region between 530 and 540 nm, whereas the PL spectra of the films deposited at higher negative substrate bias show two PL bands at 530–570 nm and 640–650 nm. On the basis of the PLE data, it was shown that these PL bands are related to the electronic recombination between the conduction band and the valence bands and their tails within the amorphous N-rich and C-rich Si-C-N-O-H networks. |
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