Reduction of self-heating effect using selective buried oxide (SELBOX) charge plasma based junctionless transistor
A junctionless transistor (JLT) having high doping concentration of the channel, suffers from the threshold voltage roll-off because of random dopant fluctuation (RDF) effect. RDF has been minimized by using charge plasma based JLT. Charge plasma is same as a workfunction engineering in which work f...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Kumar, Amrish [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2018transfer abstract |
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| Schlagwörter: |
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| Umfang: |
8 |
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| Übergeordnetes Werk: |
Enthalten in: Editorial Board - 2016, München |
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| Übergeordnetes Werk: |
volume:95 ; year:2018 ; pages:162-169 ; extent:8 |
| Links: |
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| DOI / URN: |
10.1016/j.aeue.2018.08.023 |
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| Katalog-ID: |
ELV044209851 |
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| 245 | 1 | 0 | |a Reduction of self-heating effect using selective buried oxide (SELBOX) charge plasma based junctionless transistor |
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| 520 | |a A junctionless transistor (JLT) having high doping concentration of the channel, suffers from the threshold voltage roll-off because of random dopant fluctuation (RDF) effect. RDF has been minimized by using charge plasma based JLT. Charge plasma is same as a workfunction engineering in which work function of the electrode is varied to create hole/electron plasma and induce doping in the intrinsic silicon. N-type doping is induced at the source and drain side due to difference of workfunction of silicon wafer. In this paper, charge plasma based junctionless MOSFET on selective buried oxide (SELBOX-CPJLT) is proposed. This approach is used to reduce the self-heating effect presented in SOI-based devices. The proposed device shows better thermal efficiency as compared to SELBOX-JLT. 2D-Atlas simulation revealed the electrostatics and analog performance of both the devices. The SELBOX-CPJLT exhibits better electrostatic performance as compared to SELBOX-JLT for the same channel length. The analog performance such as intrinsic gain, transconductance generation factor, output conductance and unity gain cut-off frequency are extracted from small signal ac analysis at 1 MHz and compared to SELBOX-JLT. The analysis of the thermal circuit model of SELBOX structure is also performed. | ||
| 520 | |a A junctionless transistor (JLT) having high doping concentration of the channel, suffers from the threshold voltage roll-off because of random dopant fluctuation (RDF) effect. RDF has been minimized by using charge plasma based JLT. Charge plasma is same as a workfunction engineering in which work function of the electrode is varied to create hole/electron plasma and induce doping in the intrinsic silicon. N-type doping is induced at the source and drain side due to difference of workfunction of silicon wafer. In this paper, charge plasma based junctionless MOSFET on selective buried oxide (SELBOX-CPJLT) is proposed. This approach is used to reduce the self-heating effect presented in SOI-based devices. The proposed device shows better thermal efficiency as compared to SELBOX-JLT. 2D-Atlas simulation revealed the electrostatics and analog performance of both the devices. The SELBOX-CPJLT exhibits better electrostatic performance as compared to SELBOX-JLT for the same channel length. The analog performance such as intrinsic gain, transconductance generation factor, output conductance and unity gain cut-off frequency are extracted from small signal ac analysis at 1 MHz and compared to SELBOX-JLT. The analysis of the thermal circuit model of SELBOX structure is also performed. | ||
| 650 | 7 | |a Junctionless transistor (JLT) |2 Elsevier | |
| 650 | 7 | |a Self-heating effect (SHE) |2 Elsevier | |
| 650 | 7 | |a SCEs (short channel effects) |2 Elsevier | |
| 650 | 7 | |a Charge plasma (CP) |2 Elsevier | |
| 650 | 7 | |a Selective buried oxide (SELBOX) |2 Elsevier | |
| 700 | 1 | |a Gupta, Abhinav |4 oth | |
| 700 | 1 | |a Rai, Sanjeev |4 oth | |
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10.1016/j.aeue.2018.08.023 doi GBV00000000000371.pica (DE-627)ELV044209851 (ELSEVIER)S1434-8411(18)30325-X DE-627 ger DE-627 rakwb eng 610 VZ 370 VZ Kumar, Amrish verfasserin aut Reduction of self-heating effect using selective buried oxide (SELBOX) charge plasma based junctionless transistor 2018transfer abstract 8 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier A junctionless transistor (JLT) having high doping concentration of the channel, suffers from the threshold voltage roll-off because of random dopant fluctuation (RDF) effect. RDF has been minimized by using charge plasma based JLT. Charge plasma is same as a workfunction engineering in which work function of the electrode is varied to create hole/electron plasma and induce doping in the intrinsic silicon. N-type doping is induced at the source and drain side due to difference of workfunction of silicon wafer. In this paper, charge plasma based junctionless MOSFET on selective buried oxide (SELBOX-CPJLT) is proposed. This approach is used to reduce the self-heating effect presented in SOI-based devices. The proposed device shows better thermal efficiency as compared to SELBOX-JLT. 2D-Atlas simulation revealed the electrostatics and analog performance of both the devices. The SELBOX-CPJLT exhibits better electrostatic performance as compared to SELBOX-JLT for the same channel length. The analog performance such as intrinsic gain, transconductance generation factor, output conductance and unity gain cut-off frequency are extracted from small signal ac analysis at 1 MHz and compared to SELBOX-JLT. The analysis of the thermal circuit model of SELBOX structure is also performed. A junctionless transistor (JLT) having high doping concentration of the channel, suffers from the threshold voltage roll-off because of random dopant fluctuation (RDF) effect. RDF has been minimized by using charge plasma based JLT. Charge plasma is same as a workfunction engineering in which work function of the electrode is varied to create hole/electron plasma and induce doping in the intrinsic silicon. N-type doping is induced at the source and drain side due to difference of workfunction of silicon wafer. In this paper, charge plasma based junctionless MOSFET on selective buried oxide (SELBOX-CPJLT) is proposed. This approach is used to reduce the self-heating effect presented in SOI-based devices. The proposed device shows better thermal efficiency as compared to SELBOX-JLT. 2D-Atlas simulation revealed the electrostatics and analog performance of both the devices. The SELBOX-CPJLT exhibits better electrostatic performance as compared to SELBOX-JLT for the same channel length. The analog performance such as intrinsic gain, transconductance generation factor, output conductance and unity gain cut-off frequency are extracted from small signal ac analysis at 1 MHz and compared to SELBOX-JLT. The analysis of the thermal circuit model of SELBOX structure is also performed. Junctionless transistor (JLT) Elsevier Self-heating effect (SHE) Elsevier SCEs (short channel effects) Elsevier Charge plasma (CP) Elsevier Selective buried oxide (SELBOX) Elsevier Gupta, Abhinav oth Rai, Sanjeev oth Enthalten in Elsevier Editorial Board 2016 München (DE-627)ELV019902425 volume:95 year:2018 pages:162-169 extent:8 https://doi.org/10.1016/j.aeue.2018.08.023 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U AR 95 2018 162-169 8 |
| spelling |
10.1016/j.aeue.2018.08.023 doi GBV00000000000371.pica (DE-627)ELV044209851 (ELSEVIER)S1434-8411(18)30325-X DE-627 ger DE-627 rakwb eng 610 VZ 370 VZ Kumar, Amrish verfasserin aut Reduction of self-heating effect using selective buried oxide (SELBOX) charge plasma based junctionless transistor 2018transfer abstract 8 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier A junctionless transistor (JLT) having high doping concentration of the channel, suffers from the threshold voltage roll-off because of random dopant fluctuation (RDF) effect. RDF has been minimized by using charge plasma based JLT. Charge plasma is same as a workfunction engineering in which work function of the electrode is varied to create hole/electron plasma and induce doping in the intrinsic silicon. N-type doping is induced at the source and drain side due to difference of workfunction of silicon wafer. In this paper, charge plasma based junctionless MOSFET on selective buried oxide (SELBOX-CPJLT) is proposed. This approach is used to reduce the self-heating effect presented in SOI-based devices. The proposed device shows better thermal efficiency as compared to SELBOX-JLT. 2D-Atlas simulation revealed the electrostatics and analog performance of both the devices. The SELBOX-CPJLT exhibits better electrostatic performance as compared to SELBOX-JLT for the same channel length. The analog performance such as intrinsic gain, transconductance generation factor, output conductance and unity gain cut-off frequency are extracted from small signal ac analysis at 1 MHz and compared to SELBOX-JLT. The analysis of the thermal circuit model of SELBOX structure is also performed. A junctionless transistor (JLT) having high doping concentration of the channel, suffers from the threshold voltage roll-off because of random dopant fluctuation (RDF) effect. RDF has been minimized by using charge plasma based JLT. Charge plasma is same as a workfunction engineering in which work function of the electrode is varied to create hole/electron plasma and induce doping in the intrinsic silicon. N-type doping is induced at the source and drain side due to difference of workfunction of silicon wafer. In this paper, charge plasma based junctionless MOSFET on selective buried oxide (SELBOX-CPJLT) is proposed. This approach is used to reduce the self-heating effect presented in SOI-based devices. The proposed device shows better thermal efficiency as compared to SELBOX-JLT. 2D-Atlas simulation revealed the electrostatics and analog performance of both the devices. The SELBOX-CPJLT exhibits better electrostatic performance as compared to SELBOX-JLT for the same channel length. The analog performance such as intrinsic gain, transconductance generation factor, output conductance and unity gain cut-off frequency are extracted from small signal ac analysis at 1 MHz and compared to SELBOX-JLT. The analysis of the thermal circuit model of SELBOX structure is also performed. Junctionless transistor (JLT) Elsevier Self-heating effect (SHE) Elsevier SCEs (short channel effects) Elsevier Charge plasma (CP) Elsevier Selective buried oxide (SELBOX) Elsevier Gupta, Abhinav oth Rai, Sanjeev oth Enthalten in Elsevier Editorial Board 2016 München (DE-627)ELV019902425 volume:95 year:2018 pages:162-169 extent:8 https://doi.org/10.1016/j.aeue.2018.08.023 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U AR 95 2018 162-169 8 |
| allfields_unstemmed |
10.1016/j.aeue.2018.08.023 doi GBV00000000000371.pica (DE-627)ELV044209851 (ELSEVIER)S1434-8411(18)30325-X DE-627 ger DE-627 rakwb eng 610 VZ 370 VZ Kumar, Amrish verfasserin aut Reduction of self-heating effect using selective buried oxide (SELBOX) charge plasma based junctionless transistor 2018transfer abstract 8 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier A junctionless transistor (JLT) having high doping concentration of the channel, suffers from the threshold voltage roll-off because of random dopant fluctuation (RDF) effect. RDF has been minimized by using charge plasma based JLT. Charge plasma is same as a workfunction engineering in which work function of the electrode is varied to create hole/electron plasma and induce doping in the intrinsic silicon. N-type doping is induced at the source and drain side due to difference of workfunction of silicon wafer. In this paper, charge plasma based junctionless MOSFET on selective buried oxide (SELBOX-CPJLT) is proposed. This approach is used to reduce the self-heating effect presented in SOI-based devices. The proposed device shows better thermal efficiency as compared to SELBOX-JLT. 2D-Atlas simulation revealed the electrostatics and analog performance of both the devices. The SELBOX-CPJLT exhibits better electrostatic performance as compared to SELBOX-JLT for the same channel length. The analog performance such as intrinsic gain, transconductance generation factor, output conductance and unity gain cut-off frequency are extracted from small signal ac analysis at 1 MHz and compared to SELBOX-JLT. The analysis of the thermal circuit model of SELBOX structure is also performed. A junctionless transistor (JLT) having high doping concentration of the channel, suffers from the threshold voltage roll-off because of random dopant fluctuation (RDF) effect. RDF has been minimized by using charge plasma based JLT. Charge plasma is same as a workfunction engineering in which work function of the electrode is varied to create hole/electron plasma and induce doping in the intrinsic silicon. N-type doping is induced at the source and drain side due to difference of workfunction of silicon wafer. In this paper, charge plasma based junctionless MOSFET on selective buried oxide (SELBOX-CPJLT) is proposed. This approach is used to reduce the self-heating effect presented in SOI-based devices. The proposed device shows better thermal efficiency as compared to SELBOX-JLT. 2D-Atlas simulation revealed the electrostatics and analog performance of both the devices. The SELBOX-CPJLT exhibits better electrostatic performance as compared to SELBOX-JLT for the same channel length. The analog performance such as intrinsic gain, transconductance generation factor, output conductance and unity gain cut-off frequency are extracted from small signal ac analysis at 1 MHz and compared to SELBOX-JLT. The analysis of the thermal circuit model of SELBOX structure is also performed. Junctionless transistor (JLT) Elsevier Self-heating effect (SHE) Elsevier SCEs (short channel effects) Elsevier Charge plasma (CP) Elsevier Selective buried oxide (SELBOX) Elsevier Gupta, Abhinav oth Rai, Sanjeev oth Enthalten in Elsevier Editorial Board 2016 München (DE-627)ELV019902425 volume:95 year:2018 pages:162-169 extent:8 https://doi.org/10.1016/j.aeue.2018.08.023 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U AR 95 2018 162-169 8 |
| allfieldsGer |
10.1016/j.aeue.2018.08.023 doi GBV00000000000371.pica (DE-627)ELV044209851 (ELSEVIER)S1434-8411(18)30325-X DE-627 ger DE-627 rakwb eng 610 VZ 370 VZ Kumar, Amrish verfasserin aut Reduction of self-heating effect using selective buried oxide (SELBOX) charge plasma based junctionless transistor 2018transfer abstract 8 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier A junctionless transistor (JLT) having high doping concentration of the channel, suffers from the threshold voltage roll-off because of random dopant fluctuation (RDF) effect. RDF has been minimized by using charge plasma based JLT. Charge plasma is same as a workfunction engineering in which work function of the electrode is varied to create hole/electron plasma and induce doping in the intrinsic silicon. N-type doping is induced at the source and drain side due to difference of workfunction of silicon wafer. In this paper, charge plasma based junctionless MOSFET on selective buried oxide (SELBOX-CPJLT) is proposed. This approach is used to reduce the self-heating effect presented in SOI-based devices. The proposed device shows better thermal efficiency as compared to SELBOX-JLT. 2D-Atlas simulation revealed the electrostatics and analog performance of both the devices. The SELBOX-CPJLT exhibits better electrostatic performance as compared to SELBOX-JLT for the same channel length. The analog performance such as intrinsic gain, transconductance generation factor, output conductance and unity gain cut-off frequency are extracted from small signal ac analysis at 1 MHz and compared to SELBOX-JLT. The analysis of the thermal circuit model of SELBOX structure is also performed. A junctionless transistor (JLT) having high doping concentration of the channel, suffers from the threshold voltage roll-off because of random dopant fluctuation (RDF) effect. RDF has been minimized by using charge plasma based JLT. Charge plasma is same as a workfunction engineering in which work function of the electrode is varied to create hole/electron plasma and induce doping in the intrinsic silicon. N-type doping is induced at the source and drain side due to difference of workfunction of silicon wafer. In this paper, charge plasma based junctionless MOSFET on selective buried oxide (SELBOX-CPJLT) is proposed. This approach is used to reduce the self-heating effect presented in SOI-based devices. The proposed device shows better thermal efficiency as compared to SELBOX-JLT. 2D-Atlas simulation revealed the electrostatics and analog performance of both the devices. The SELBOX-CPJLT exhibits better electrostatic performance as compared to SELBOX-JLT for the same channel length. The analog performance such as intrinsic gain, transconductance generation factor, output conductance and unity gain cut-off frequency are extracted from small signal ac analysis at 1 MHz and compared to SELBOX-JLT. The analysis of the thermal circuit model of SELBOX structure is also performed. Junctionless transistor (JLT) Elsevier Self-heating effect (SHE) Elsevier SCEs (short channel effects) Elsevier Charge plasma (CP) Elsevier Selective buried oxide (SELBOX) Elsevier Gupta, Abhinav oth Rai, Sanjeev oth Enthalten in Elsevier Editorial Board 2016 München (DE-627)ELV019902425 volume:95 year:2018 pages:162-169 extent:8 https://doi.org/10.1016/j.aeue.2018.08.023 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U AR 95 2018 162-169 8 |
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10.1016/j.aeue.2018.08.023 doi GBV00000000000371.pica (DE-627)ELV044209851 (ELSEVIER)S1434-8411(18)30325-X DE-627 ger DE-627 rakwb eng 610 VZ 370 VZ Kumar, Amrish verfasserin aut Reduction of self-heating effect using selective buried oxide (SELBOX) charge plasma based junctionless transistor 2018transfer abstract 8 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier A junctionless transistor (JLT) having high doping concentration of the channel, suffers from the threshold voltage roll-off because of random dopant fluctuation (RDF) effect. RDF has been minimized by using charge plasma based JLT. Charge plasma is same as a workfunction engineering in which work function of the electrode is varied to create hole/electron plasma and induce doping in the intrinsic silicon. N-type doping is induced at the source and drain side due to difference of workfunction of silicon wafer. In this paper, charge plasma based junctionless MOSFET on selective buried oxide (SELBOX-CPJLT) is proposed. This approach is used to reduce the self-heating effect presented in SOI-based devices. The proposed device shows better thermal efficiency as compared to SELBOX-JLT. 2D-Atlas simulation revealed the electrostatics and analog performance of both the devices. The SELBOX-CPJLT exhibits better electrostatic performance as compared to SELBOX-JLT for the same channel length. The analog performance such as intrinsic gain, transconductance generation factor, output conductance and unity gain cut-off frequency are extracted from small signal ac analysis at 1 MHz and compared to SELBOX-JLT. The analysis of the thermal circuit model of SELBOX structure is also performed. A junctionless transistor (JLT) having high doping concentration of the channel, suffers from the threshold voltage roll-off because of random dopant fluctuation (RDF) effect. RDF has been minimized by using charge plasma based JLT. Charge plasma is same as a workfunction engineering in which work function of the electrode is varied to create hole/electron plasma and induce doping in the intrinsic silicon. N-type doping is induced at the source and drain side due to difference of workfunction of silicon wafer. In this paper, charge plasma based junctionless MOSFET on selective buried oxide (SELBOX-CPJLT) is proposed. This approach is used to reduce the self-heating effect presented in SOI-based devices. The proposed device shows better thermal efficiency as compared to SELBOX-JLT. 2D-Atlas simulation revealed the electrostatics and analog performance of both the devices. The SELBOX-CPJLT exhibits better electrostatic performance as compared to SELBOX-JLT for the same channel length. The analog performance such as intrinsic gain, transconductance generation factor, output conductance and unity gain cut-off frequency are extracted from small signal ac analysis at 1 MHz and compared to SELBOX-JLT. The analysis of the thermal circuit model of SELBOX structure is also performed. Junctionless transistor (JLT) Elsevier Self-heating effect (SHE) Elsevier SCEs (short channel effects) Elsevier Charge plasma (CP) Elsevier Selective buried oxide (SELBOX) Elsevier Gupta, Abhinav oth Rai, Sanjeev oth Enthalten in Elsevier Editorial Board 2016 München (DE-627)ELV019902425 volume:95 year:2018 pages:162-169 extent:8 https://doi.org/10.1016/j.aeue.2018.08.023 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U AR 95 2018 162-169 8 |
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RDF has been minimized by using charge plasma based JLT. Charge plasma is same as a workfunction engineering in which work function of the electrode is varied to create hole/electron plasma and induce doping in the intrinsic silicon. N-type doping is induced at the source and drain side due to difference of workfunction of silicon wafer. In this paper, charge plasma based junctionless MOSFET on selective buried oxide (SELBOX-CPJLT) is proposed. This approach is used to reduce the self-heating effect presented in SOI-based devices. The proposed device shows better thermal efficiency as compared to SELBOX-JLT. 2D-Atlas simulation revealed the electrostatics and analog performance of both the devices. The SELBOX-CPJLT exhibits better electrostatic performance as compared to SELBOX-JLT for the same channel length. 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reduction of self-heating effect using selective buried oxide (selbox) charge plasma based junctionless transistor |
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Reduction of self-heating effect using selective buried oxide (SELBOX) charge plasma based junctionless transistor |
| abstract |
A junctionless transistor (JLT) having high doping concentration of the channel, suffers from the threshold voltage roll-off because of random dopant fluctuation (RDF) effect. RDF has been minimized by using charge plasma based JLT. Charge plasma is same as a workfunction engineering in which work function of the electrode is varied to create hole/electron plasma and induce doping in the intrinsic silicon. N-type doping is induced at the source and drain side due to difference of workfunction of silicon wafer. In this paper, charge plasma based junctionless MOSFET on selective buried oxide (SELBOX-CPJLT) is proposed. This approach is used to reduce the self-heating effect presented in SOI-based devices. The proposed device shows better thermal efficiency as compared to SELBOX-JLT. 2D-Atlas simulation revealed the electrostatics and analog performance of both the devices. The SELBOX-CPJLT exhibits better electrostatic performance as compared to SELBOX-JLT for the same channel length. The analog performance such as intrinsic gain, transconductance generation factor, output conductance and unity gain cut-off frequency are extracted from small signal ac analysis at 1 MHz and compared to SELBOX-JLT. The analysis of the thermal circuit model of SELBOX structure is also performed. |
| abstractGer |
A junctionless transistor (JLT) having high doping concentration of the channel, suffers from the threshold voltage roll-off because of random dopant fluctuation (RDF) effect. RDF has been minimized by using charge plasma based JLT. Charge plasma is same as a workfunction engineering in which work function of the electrode is varied to create hole/electron plasma and induce doping in the intrinsic silicon. N-type doping is induced at the source and drain side due to difference of workfunction of silicon wafer. In this paper, charge plasma based junctionless MOSFET on selective buried oxide (SELBOX-CPJLT) is proposed. This approach is used to reduce the self-heating effect presented in SOI-based devices. The proposed device shows better thermal efficiency as compared to SELBOX-JLT. 2D-Atlas simulation revealed the electrostatics and analog performance of both the devices. The SELBOX-CPJLT exhibits better electrostatic performance as compared to SELBOX-JLT for the same channel length. The analog performance such as intrinsic gain, transconductance generation factor, output conductance and unity gain cut-off frequency are extracted from small signal ac analysis at 1 MHz and compared to SELBOX-JLT. The analysis of the thermal circuit model of SELBOX structure is also performed. |
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A junctionless transistor (JLT) having high doping concentration of the channel, suffers from the threshold voltage roll-off because of random dopant fluctuation (RDF) effect. RDF has been minimized by using charge plasma based JLT. Charge plasma is same as a workfunction engineering in which work function of the electrode is varied to create hole/electron plasma and induce doping in the intrinsic silicon. N-type doping is induced at the source and drain side due to difference of workfunction of silicon wafer. In this paper, charge plasma based junctionless MOSFET on selective buried oxide (SELBOX-CPJLT) is proposed. This approach is used to reduce the self-heating effect presented in SOI-based devices. The proposed device shows better thermal efficiency as compared to SELBOX-JLT. 2D-Atlas simulation revealed the electrostatics and analog performance of both the devices. The SELBOX-CPJLT exhibits better electrostatic performance as compared to SELBOX-JLT for the same channel length. The analog performance such as intrinsic gain, transconductance generation factor, output conductance and unity gain cut-off frequency are extracted from small signal ac analysis at 1 MHz and compared to SELBOX-JLT. The analysis of the thermal circuit model of SELBOX structure is also performed. |
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Reduction of self-heating effect using selective buried oxide (SELBOX) charge plasma based junctionless transistor |
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