Electromigration effect on the surface morphology during the Ge deposition on Si(1 1 1) at high temperatures
• Strong electromigration effect is observed during Ge deposition on Si(1 1 1) at 850–900 °C. • Electromigration can enhance or reduce the stain effect on surface morphology formation. • Electromigration produces unusual nanostructure formation during heterostructure growth. • Atomic steps on SiGe(1...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Shklyaev, A.A. [verfasserIn] |
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E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2019 |
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| Schlagwörter: |
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| Umfang: |
5 |
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| Übergeordnetes Werk: |
Enthalten in: Characterising shape patterns using features derived from best-fitting ellipsoids - Gontar, Amelia ELSEVIER, 2018, a journal devoted to applied physics and chemistry of surfaces and interfaces, Amsterdam |
|---|---|
| Übergeordnetes Werk: |
volume:465 ; year:2019 ; day:28 ; month:01 ; pages:10-14 ; extent:5 |
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| DOI / URN: |
10.1016/j.apsusc.2018.09.119 |
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| 520 | |a • Strong electromigration effect is observed during Ge deposition on Si(1 1 1) at 850–900 °C. • Electromigration can enhance or reduce the stain effect on surface morphology formation. • Electromigration produces unusual nanostructure formation during heterostructure growth. • Atomic steps on SiGe(1 1 1) surfaces become unstable after reaching a height of about 15 nm. | ||
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• Strong electromigration effect is observed during Ge deposition on Si(1 1 1) at 850–900 °C. • Electromigration can enhance or reduce the stain effect on surface morphology formation. • Electromigration produces unusual nanostructure formation during heterostructure growth. • Atomic steps on SiGe(1 1 1) surfaces become unstable after reaching a height of about 15 nm. |
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• Strong electromigration effect is observed during Ge deposition on Si(1 1 1) at 850–900 °C. • Electromigration can enhance or reduce the stain effect on surface morphology formation. • Electromigration produces unusual nanostructure formation during heterostructure growth. • Atomic steps on SiGe(1 1 1) surfaces become unstable after reaching a height of about 15 nm. |
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• Strong electromigration effect is observed during Ge deposition on Si(1 1 1) at 850–900 °C. • Electromigration can enhance or reduce the stain effect on surface morphology formation. • Electromigration produces unusual nanostructure formation during heterostructure growth. • Atomic steps on SiGe(1 1 1) surfaces become unstable after reaching a height of about 15 nm. |
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code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">• Strong electromigration effect is observed during Ge deposition on Si(1 1 1) at 850–900 °C. • Electromigration can enhance or reduce the stain effect on surface morphology formation. • Electromigration produces unusual nanostructure formation during heterostructure growth. • Atomic steps on SiGe(1 1 1) surfaces become unstable after reaching a height of about 15 nm.</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield 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