Effect of C<ce:inf loc="post">4</ce:inf>H<ce:inf loc="post">6</ce:inf>O<ce:inf loc="post">6</ce:inf> concentration on the properties of SnS thin films for solar cell applications
Current density-voltage (J–V) characteristics of SnS (0.6–1.6 M)-based thin film solar cell.
Autor*in: |
Gedi, Sreedevi [verfasserIn] |
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Format: |
E-Artikel |
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Sprache: |
Englisch |
Erschienen: |
2019 |
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Schlagwörter: |
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Umfang: |
14 |
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Übergeordnetes Werk: |
Enthalten in: Characterising shape patterns using features derived from best-fitting ellipsoids - Gontar, Amelia ELSEVIER, 2018, a journal devoted to applied physics and chemistry of surfaces and interfaces, Amsterdam |
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Übergeordnetes Werk: |
volume:465 ; year:2019 ; day:28 ; month:01 ; pages:802-815 ; extent:14 |
Links: |
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DOI / URN: |
10.1016/j.apsusc.2018.09.214 |
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ELV044861621 |
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Effect of C<ce:inf loc="post">4</ce:inf>H<ce:inf loc="post">6</ce:inf>O<ce:inf loc="post">6</ce:inf> concentration on the properties of SnS thin films for solar cell applications |
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Current density-voltage (J–V) characteristics of SnS (0.6–1.6 M)-based thin film solar cell. |
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Current density-voltage (J–V) characteristics of SnS (0.6–1.6 M)-based thin film solar cell. |
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Effect of C<ce:inf loc="post">4</ce:inf>H<ce:inf loc="post">6</ce:inf>O<ce:inf loc="post">6</ce:inf> concentration on the properties of SnS thin films for solar cell applications |
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