Resistive switching behavior of Ga doped ZnO-nanorods film conductive bridge random access memory
The influence of Ga dopant on resistive switching behavior of ZnO-nanorods film conducting bridge random access memory was investigated. Using a hydrothermal process, we grew vertically well-aligned and uniform Ga doped ZnO (GZO)-NRs films on transparent glass substrates to fabricate Cu/TiW/GZO-NRs/...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Singh, Pragya [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2018transfer abstract |
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| Umfang: |
6 |
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| Übergeordnetes Werk: |
Enthalten in: Formation and degradation of N-oxide venlafaxine during ozonation and biological post-treatment - Zucker, Ines ELSEVIER, 2017, international journal on the science and technology of condensed matter films, Amsterdam [u.a.] |
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| Übergeordnetes Werk: |
volume:660 ; year:2018 ; day:30 ; month:08 ; pages:828-833 ; extent:6 |
| Links: |
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| DOI / URN: |
10.1016/j.tsf.2018.03.027 |
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ELV045411816 |
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| 520 | |a The influence of Ga dopant on resistive switching behavior of ZnO-nanorods film conducting bridge random access memory was investigated. Using a hydrothermal process, we grew vertically well-aligned and uniform Ga doped ZnO (GZO)-NRs films on transparent glass substrates to fabricate Cu/TiW/GZO-NRs/Indium Tin Oxide/Glass devices. The GZO-NRs film provides a diffusion path for the Cu ions to form a conducting bridge; thus, reducing the formation of a branched filament. The Ga dopant induces a significant improvement in switching distribution of high resistance states (HRS) and low resistance states (LRS). The 1.5 mol% Ga doped device exhibits good retention up to 104 s and high HRS/LRS ratio of 30 times. Therefore, our proposed device structure may be a good candidate for future conductive-bridge resistive random access memory application. | ||
| 520 | |a The influence of Ga dopant on resistive switching behavior of ZnO-nanorods film conducting bridge random access memory was investigated. Using a hydrothermal process, we grew vertically well-aligned and uniform Ga doped ZnO (GZO)-NRs films on transparent glass substrates to fabricate Cu/TiW/GZO-NRs/Indium Tin Oxide/Glass devices. The GZO-NRs film provides a diffusion path for the Cu ions to form a conducting bridge; thus, reducing the formation of a branched filament. The Ga dopant induces a significant improvement in switching distribution of high resistance states (HRS) and low resistance states (LRS). The 1.5 mol% Ga doped device exhibits good retention up to 104 s and high HRS/LRS ratio of 30 times. Therefore, our proposed device structure may be a good candidate for future conductive-bridge resistive random access memory application. | ||
| 700 | 1 | |a Simanjuntak, Firman Mangasa |4 oth | |
| 700 | 1 | |a Kumar, Amit |4 oth | |
| 700 | 1 | |a Tseng, Tseung-Yuen |4 oth | |
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10.1016/j.tsf.2018.03.027 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000000987.pica (DE-627)ELV045411816 (ELSEVIER)S0040-6090(18)30170-6 DE-627 ger DE-627 rakwb eng 333.7 610 VZ 43.12 bkl 43.13 bkl 44.13 bkl Singh, Pragya verfasserin aut Resistive switching behavior of Ga doped ZnO-nanorods film conductive bridge random access memory 2018transfer abstract 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The influence of Ga dopant on resistive switching behavior of ZnO-nanorods film conducting bridge random access memory was investigated. Using a hydrothermal process, we grew vertically well-aligned and uniform Ga doped ZnO (GZO)-NRs films on transparent glass substrates to fabricate Cu/TiW/GZO-NRs/Indium Tin Oxide/Glass devices. The GZO-NRs film provides a diffusion path for the Cu ions to form a conducting bridge; thus, reducing the formation of a branched filament. The Ga dopant induces a significant improvement in switching distribution of high resistance states (HRS) and low resistance states (LRS). The 1.5 mol% Ga doped device exhibits good retention up to 104 s and high HRS/LRS ratio of 30 times. Therefore, our proposed device structure may be a good candidate for future conductive-bridge resistive random access memory application. The influence of Ga dopant on resistive switching behavior of ZnO-nanorods film conducting bridge random access memory was investigated. Using a hydrothermal process, we grew vertically well-aligned and uniform Ga doped ZnO (GZO)-NRs films on transparent glass substrates to fabricate Cu/TiW/GZO-NRs/Indium Tin Oxide/Glass devices. The GZO-NRs film provides a diffusion path for the Cu ions to form a conducting bridge; thus, reducing the formation of a branched filament. The Ga dopant induces a significant improvement in switching distribution of high resistance states (HRS) and low resistance states (LRS). The 1.5 mol% Ga doped device exhibits good retention up to 104 s and high HRS/LRS ratio of 30 times. Therefore, our proposed device structure may be a good candidate for future conductive-bridge resistive random access memory application. Simanjuntak, Firman Mangasa oth Kumar, Amit oth Tseng, Tseung-Yuen oth Enthalten in Elsevier Zucker, Ines ELSEVIER Formation and degradation of N-oxide venlafaxine during ozonation and biological post-treatment 2017 international journal on the science and technology of condensed matter films Amsterdam [u.a.] (DE-627)ELV000692654 volume:660 year:2018 day:30 month:08 pages:828-833 extent:6 https://doi.org/10.1016/j.tsf.2018.03.027 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA SSG-OPC-GGO 43.12 Umweltchemie VZ 43.13 Umwelttoxikologie VZ 44.13 Medizinische Ökologie VZ AR 660 2018 30 0830 828-833 6 |
| spelling |
10.1016/j.tsf.2018.03.027 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000000987.pica (DE-627)ELV045411816 (ELSEVIER)S0040-6090(18)30170-6 DE-627 ger DE-627 rakwb eng 333.7 610 VZ 43.12 bkl 43.13 bkl 44.13 bkl Singh, Pragya verfasserin aut Resistive switching behavior of Ga doped ZnO-nanorods film conductive bridge random access memory 2018transfer abstract 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The influence of Ga dopant on resistive switching behavior of ZnO-nanorods film conducting bridge random access memory was investigated. Using a hydrothermal process, we grew vertically well-aligned and uniform Ga doped ZnO (GZO)-NRs films on transparent glass substrates to fabricate Cu/TiW/GZO-NRs/Indium Tin Oxide/Glass devices. The GZO-NRs film provides a diffusion path for the Cu ions to form a conducting bridge; thus, reducing the formation of a branched filament. The Ga dopant induces a significant improvement in switching distribution of high resistance states (HRS) and low resistance states (LRS). The 1.5 mol% Ga doped device exhibits good retention up to 104 s and high HRS/LRS ratio of 30 times. Therefore, our proposed device structure may be a good candidate for future conductive-bridge resistive random access memory application. The influence of Ga dopant on resistive switching behavior of ZnO-nanorods film conducting bridge random access memory was investigated. Using a hydrothermal process, we grew vertically well-aligned and uniform Ga doped ZnO (GZO)-NRs films on transparent glass substrates to fabricate Cu/TiW/GZO-NRs/Indium Tin Oxide/Glass devices. The GZO-NRs film provides a diffusion path for the Cu ions to form a conducting bridge; thus, reducing the formation of a branched filament. The Ga dopant induces a significant improvement in switching distribution of high resistance states (HRS) and low resistance states (LRS). The 1.5 mol% Ga doped device exhibits good retention up to 104 s and high HRS/LRS ratio of 30 times. Therefore, our proposed device structure may be a good candidate for future conductive-bridge resistive random access memory application. Simanjuntak, Firman Mangasa oth Kumar, Amit oth Tseng, Tseung-Yuen oth Enthalten in Elsevier Zucker, Ines ELSEVIER Formation and degradation of N-oxide venlafaxine during ozonation and biological post-treatment 2017 international journal on the science and technology of condensed matter films Amsterdam [u.a.] (DE-627)ELV000692654 volume:660 year:2018 day:30 month:08 pages:828-833 extent:6 https://doi.org/10.1016/j.tsf.2018.03.027 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA SSG-OPC-GGO 43.12 Umweltchemie VZ 43.13 Umwelttoxikologie VZ 44.13 Medizinische Ökologie VZ AR 660 2018 30 0830 828-833 6 |
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10.1016/j.tsf.2018.03.027 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000000987.pica (DE-627)ELV045411816 (ELSEVIER)S0040-6090(18)30170-6 DE-627 ger DE-627 rakwb eng 333.7 610 VZ 43.12 bkl 43.13 bkl 44.13 bkl Singh, Pragya verfasserin aut Resistive switching behavior of Ga doped ZnO-nanorods film conductive bridge random access memory 2018transfer abstract 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The influence of Ga dopant on resistive switching behavior of ZnO-nanorods film conducting bridge random access memory was investigated. Using a hydrothermal process, we grew vertically well-aligned and uniform Ga doped ZnO (GZO)-NRs films on transparent glass substrates to fabricate Cu/TiW/GZO-NRs/Indium Tin Oxide/Glass devices. The GZO-NRs film provides a diffusion path for the Cu ions to form a conducting bridge; thus, reducing the formation of a branched filament. The Ga dopant induces a significant improvement in switching distribution of high resistance states (HRS) and low resistance states (LRS). The 1.5 mol% Ga doped device exhibits good retention up to 104 s and high HRS/LRS ratio of 30 times. Therefore, our proposed device structure may be a good candidate for future conductive-bridge resistive random access memory application. The influence of Ga dopant on resistive switching behavior of ZnO-nanorods film conducting bridge random access memory was investigated. Using a hydrothermal process, we grew vertically well-aligned and uniform Ga doped ZnO (GZO)-NRs films on transparent glass substrates to fabricate Cu/TiW/GZO-NRs/Indium Tin Oxide/Glass devices. The GZO-NRs film provides a diffusion path for the Cu ions to form a conducting bridge; thus, reducing the formation of a branched filament. The Ga dopant induces a significant improvement in switching distribution of high resistance states (HRS) and low resistance states (LRS). The 1.5 mol% Ga doped device exhibits good retention up to 104 s and high HRS/LRS ratio of 30 times. Therefore, our proposed device structure may be a good candidate for future conductive-bridge resistive random access memory application. Simanjuntak, Firman Mangasa oth Kumar, Amit oth Tseng, Tseung-Yuen oth Enthalten in Elsevier Zucker, Ines ELSEVIER Formation and degradation of N-oxide venlafaxine during ozonation and biological post-treatment 2017 international journal on the science and technology of condensed matter films Amsterdam [u.a.] (DE-627)ELV000692654 volume:660 year:2018 day:30 month:08 pages:828-833 extent:6 https://doi.org/10.1016/j.tsf.2018.03.027 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA SSG-OPC-GGO 43.12 Umweltchemie VZ 43.13 Umwelttoxikologie VZ 44.13 Medizinische Ökologie VZ AR 660 2018 30 0830 828-833 6 |
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10.1016/j.tsf.2018.03.027 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000000987.pica (DE-627)ELV045411816 (ELSEVIER)S0040-6090(18)30170-6 DE-627 ger DE-627 rakwb eng 333.7 610 VZ 43.12 bkl 43.13 bkl 44.13 bkl Singh, Pragya verfasserin aut Resistive switching behavior of Ga doped ZnO-nanorods film conductive bridge random access memory 2018transfer abstract 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The influence of Ga dopant on resistive switching behavior of ZnO-nanorods film conducting bridge random access memory was investigated. Using a hydrothermal process, we grew vertically well-aligned and uniform Ga doped ZnO (GZO)-NRs films on transparent glass substrates to fabricate Cu/TiW/GZO-NRs/Indium Tin Oxide/Glass devices. The GZO-NRs film provides a diffusion path for the Cu ions to form a conducting bridge; thus, reducing the formation of a branched filament. The Ga dopant induces a significant improvement in switching distribution of high resistance states (HRS) and low resistance states (LRS). The 1.5 mol% Ga doped device exhibits good retention up to 104 s and high HRS/LRS ratio of 30 times. Therefore, our proposed device structure may be a good candidate for future conductive-bridge resistive random access memory application. The influence of Ga dopant on resistive switching behavior of ZnO-nanorods film conducting bridge random access memory was investigated. Using a hydrothermal process, we grew vertically well-aligned and uniform Ga doped ZnO (GZO)-NRs films on transparent glass substrates to fabricate Cu/TiW/GZO-NRs/Indium Tin Oxide/Glass devices. The GZO-NRs film provides a diffusion path for the Cu ions to form a conducting bridge; thus, reducing the formation of a branched filament. The Ga dopant induces a significant improvement in switching distribution of high resistance states (HRS) and low resistance states (LRS). The 1.5 mol% Ga doped device exhibits good retention up to 104 s and high HRS/LRS ratio of 30 times. Therefore, our proposed device structure may be a good candidate for future conductive-bridge resistive random access memory application. Simanjuntak, Firman Mangasa oth Kumar, Amit oth Tseng, Tseung-Yuen oth Enthalten in Elsevier Zucker, Ines ELSEVIER Formation and degradation of N-oxide venlafaxine during ozonation and biological post-treatment 2017 international journal on the science and technology of condensed matter films Amsterdam [u.a.] (DE-627)ELV000692654 volume:660 year:2018 day:30 month:08 pages:828-833 extent:6 https://doi.org/10.1016/j.tsf.2018.03.027 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA SSG-OPC-GGO 43.12 Umweltchemie VZ 43.13 Umwelttoxikologie VZ 44.13 Medizinische Ökologie VZ AR 660 2018 30 0830 828-833 6 |
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10.1016/j.tsf.2018.03.027 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000000987.pica (DE-627)ELV045411816 (ELSEVIER)S0040-6090(18)30170-6 DE-627 ger DE-627 rakwb eng 333.7 610 VZ 43.12 bkl 43.13 bkl 44.13 bkl Singh, Pragya verfasserin aut Resistive switching behavior of Ga doped ZnO-nanorods film conductive bridge random access memory 2018transfer abstract 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The influence of Ga dopant on resistive switching behavior of ZnO-nanorods film conducting bridge random access memory was investigated. Using a hydrothermal process, we grew vertically well-aligned and uniform Ga doped ZnO (GZO)-NRs films on transparent glass substrates to fabricate Cu/TiW/GZO-NRs/Indium Tin Oxide/Glass devices. The GZO-NRs film provides a diffusion path for the Cu ions to form a conducting bridge; thus, reducing the formation of a branched filament. The Ga dopant induces a significant improvement in switching distribution of high resistance states (HRS) and low resistance states (LRS). The 1.5 mol% Ga doped device exhibits good retention up to 104 s and high HRS/LRS ratio of 30 times. Therefore, our proposed device structure may be a good candidate for future conductive-bridge resistive random access memory application. The influence of Ga dopant on resistive switching behavior of ZnO-nanorods film conducting bridge random access memory was investigated. Using a hydrothermal process, we grew vertically well-aligned and uniform Ga doped ZnO (GZO)-NRs films on transparent glass substrates to fabricate Cu/TiW/GZO-NRs/Indium Tin Oxide/Glass devices. The GZO-NRs film provides a diffusion path for the Cu ions to form a conducting bridge; thus, reducing the formation of a branched filament. The Ga dopant induces a significant improvement in switching distribution of high resistance states (HRS) and low resistance states (LRS). The 1.5 mol% Ga doped device exhibits good retention up to 104 s and high HRS/LRS ratio of 30 times. Therefore, our proposed device structure may be a good candidate for future conductive-bridge resistive random access memory application. Simanjuntak, Firman Mangasa oth Kumar, Amit oth Tseng, Tseung-Yuen oth Enthalten in Elsevier Zucker, Ines ELSEVIER Formation and degradation of N-oxide venlafaxine during ozonation and biological post-treatment 2017 international journal on the science and technology of condensed matter films Amsterdam [u.a.] (DE-627)ELV000692654 volume:660 year:2018 day:30 month:08 pages:828-833 extent:6 https://doi.org/10.1016/j.tsf.2018.03.027 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA SSG-OPC-GGO 43.12 Umweltchemie VZ 43.13 Umwelttoxikologie VZ 44.13 Medizinische Ökologie VZ AR 660 2018 30 0830 828-833 6 |
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English |
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Enthalten in Formation and degradation of N-oxide venlafaxine during ozonation and biological post-treatment Amsterdam [u.a.] volume:660 year:2018 day:30 month:08 pages:828-833 extent:6 |
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Enthalten in Formation and degradation of N-oxide venlafaxine during ozonation and biological post-treatment Amsterdam [u.a.] volume:660 year:2018 day:30 month:08 pages:828-833 extent:6 |
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Formation and degradation of N-oxide venlafaxine during ozonation and biological post-treatment |
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Singh, Pragya @@aut@@ Simanjuntak, Firman Mangasa @@oth@@ Kumar, Amit @@oth@@ Tseng, Tseung-Yuen @@oth@@ |
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Resistive switching behavior of Ga doped ZnO-nanorods film conductive bridge random access memory |
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The influence of Ga dopant on resistive switching behavior of ZnO-nanorods film conducting bridge random access memory was investigated. Using a hydrothermal process, we grew vertically well-aligned and uniform Ga doped ZnO (GZO)-NRs films on transparent glass substrates to fabricate Cu/TiW/GZO-NRs/Indium Tin Oxide/Glass devices. The GZO-NRs film provides a diffusion path for the Cu ions to form a conducting bridge; thus, reducing the formation of a branched filament. The Ga dopant induces a significant improvement in switching distribution of high resistance states (HRS) and low resistance states (LRS). The 1.5 mol% Ga doped device exhibits good retention up to 104 s and high HRS/LRS ratio of 30 times. Therefore, our proposed device structure may be a good candidate for future conductive-bridge resistive random access memory application. |
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The influence of Ga dopant on resistive switching behavior of ZnO-nanorods film conducting bridge random access memory was investigated. Using a hydrothermal process, we grew vertically well-aligned and uniform Ga doped ZnO (GZO)-NRs films on transparent glass substrates to fabricate Cu/TiW/GZO-NRs/Indium Tin Oxide/Glass devices. The GZO-NRs film provides a diffusion path for the Cu ions to form a conducting bridge; thus, reducing the formation of a branched filament. The Ga dopant induces a significant improvement in switching distribution of high resistance states (HRS) and low resistance states (LRS). The 1.5 mol% Ga doped device exhibits good retention up to 104 s and high HRS/LRS ratio of 30 times. Therefore, our proposed device structure may be a good candidate for future conductive-bridge resistive random access memory application. |
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The influence of Ga dopant on resistive switching behavior of ZnO-nanorods film conducting bridge random access memory was investigated. Using a hydrothermal process, we grew vertically well-aligned and uniform Ga doped ZnO (GZO)-NRs films on transparent glass substrates to fabricate Cu/TiW/GZO-NRs/Indium Tin Oxide/Glass devices. The GZO-NRs film provides a diffusion path for the Cu ions to form a conducting bridge; thus, reducing the formation of a branched filament. The Ga dopant induces a significant improvement in switching distribution of high resistance states (HRS) and low resistance states (LRS). The 1.5 mol% Ga doped device exhibits good retention up to 104 s and high HRS/LRS ratio of 30 times. Therefore, our proposed device structure may be a good candidate for future conductive-bridge resistive random access memory application. |
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