Resistive switching behavior of Ga doped ZnO-nanorods film conductive bridge random access memory

The influence of Ga dopant on resistive switching behavior of ZnO-nanorods film conducting bridge random access memory was investigated. Using a hydrothermal process, we grew vertically well-aligned and uniform Ga doped ZnO (GZO)-NRs films on transparent glass substrates to fabricate Cu/TiW/GZO-NRs/...
Ausführliche Beschreibung

Gespeichert in:
Autor*in:

Singh, Pragya [verfasserIn]

Simanjuntak, Firman Mangasa

Kumar, Amit

Tseng, Tseung-Yuen

Format:

E-Artikel

Sprache:

Englisch

Erschienen:

2018transfer abstract

Umfang:

6

Übergeordnetes Werk:

Enthalten in: Formation and degradation of N-oxide venlafaxine during ozonation and biological post-treatment - Zucker, Ines ELSEVIER, 2017, international journal on the science and technology of condensed matter films, Amsterdam [u.a.]

Übergeordnetes Werk:

volume:660 ; year:2018 ; day:30 ; month:08 ; pages:828-833 ; extent:6

Links:

Volltext

DOI / URN:

10.1016/j.tsf.2018.03.027

Katalog-ID:

ELV045411816

Nicht das Richtige dabei?

Schreiben Sie uns!