Impact of KF-post deposition treatment on Cu(In,Ga)Se2 surface and Cu(In,Ga)Se2/CdS interface sulfurization
• Cu(In,Ga)Se2 (CIGSe) absorber sulfurization is investigated. • First CIGSe is exposed to elemental sulfur vapor or KF treated under sulfur atmosphere. • KF enhances CIGSe sulfurization efficiency compared to process performed without K supply. • Then CdS is chemical bath deposited on CIGSe KF-post...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Harel, S. [verfasserIn] |
|---|
| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2019 |
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| Schlagwörter: |
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| Umfang: |
4 |
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| Übergeordnetes Werk: |
Enthalten in: Characterising shape patterns using features derived from best-fitting ellipsoids - Gontar, Amelia ELSEVIER, 2018, a journal devoted to applied physics and chemistry of surfaces and interfaces, Amsterdam |
|---|---|
| Übergeordnetes Werk: |
volume:473 ; year:2019 ; day:15 ; month:04 ; pages:1062-1065 ; extent:4 |
| Links: |
|---|
| DOI / URN: |
10.1016/j.apsusc.2018.12.062 |
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ELV045572062 |
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| 520 | |a • Cu(In,Ga)Se2 (CIGSe) absorber sulfurization is investigated. • First CIGSe is exposed to elemental sulfur vapor or KF treated under sulfur atmosphere. • KF enhances CIGSe sulfurization efficiency compared to process performed without K supply. • Then CdS is chemical bath deposited on CIGSe KF-post treated under Se atmosphere. • No CIGSe sulfurization is detected in this case at the CIGSe/CdS interface. | ||
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10.1016/j.apsusc.2018.12.062 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001665.pica (DE-627)ELV045572062 (ELSEVIER)S0169-4332(18)33390-7 DE-627 ger DE-627 rakwb eng 000 150 VZ 54.74 bkl Harel, S. verfasserin aut Impact of KF-post deposition treatment on Cu(In,Ga)Se2 surface and Cu(In,Ga)Se2/CdS interface sulfurization 2019 4 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier • Cu(In,Ga)Se2 (CIGSe) absorber sulfurization is investigated. • First CIGSe is exposed to elemental sulfur vapor or KF treated under sulfur atmosphere. • KF enhances CIGSe sulfurization efficiency compared to process performed without K supply. • Then CdS is chemical bath deposited on CIGSe KF-post treated under Se atmosphere. • No CIGSe sulfurization is detected in this case at the CIGSe/CdS interface. KF-PDT Elsevier XES Elsevier Sulfurization Elsevier XPS Elsevier Cu(In,Ga)Se2 Elsevier Interface Elsevier Jonnard, P. oth Lepetit, T. oth Arzel, L. oth Barreau, N. oth Enthalten in Elsevier Gontar, Amelia ELSEVIER Characterising shape patterns using features derived from best-fitting ellipsoids 2018 a journal devoted to applied physics and chemistry of surfaces and interfaces Amsterdam (DE-627)ELV000097942 volume:473 year:2019 day:15 month:04 pages:1062-1065 extent:4 https://doi.org/10.1016/j.apsusc.2018.12.062 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 54.74 Maschinelles Sehen VZ AR 473 2019 15 0415 1062-1065 4 |
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10.1016/j.apsusc.2018.12.062 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001665.pica (DE-627)ELV045572062 (ELSEVIER)S0169-4332(18)33390-7 DE-627 ger DE-627 rakwb eng 000 150 VZ 54.74 bkl Harel, S. verfasserin aut Impact of KF-post deposition treatment on Cu(In,Ga)Se2 surface and Cu(In,Ga)Se2/CdS interface sulfurization 2019 4 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier • Cu(In,Ga)Se2 (CIGSe) absorber sulfurization is investigated. • First CIGSe is exposed to elemental sulfur vapor or KF treated under sulfur atmosphere. • KF enhances CIGSe sulfurization efficiency compared to process performed without K supply. • Then CdS is chemical bath deposited on CIGSe KF-post treated under Se atmosphere. • No CIGSe sulfurization is detected in this case at the CIGSe/CdS interface. KF-PDT Elsevier XES Elsevier Sulfurization Elsevier XPS Elsevier Cu(In,Ga)Se2 Elsevier Interface Elsevier Jonnard, P. oth Lepetit, T. oth Arzel, L. oth Barreau, N. oth Enthalten in Elsevier Gontar, Amelia ELSEVIER Characterising shape patterns using features derived from best-fitting ellipsoids 2018 a journal devoted to applied physics and chemistry of surfaces and interfaces Amsterdam (DE-627)ELV000097942 volume:473 year:2019 day:15 month:04 pages:1062-1065 extent:4 https://doi.org/10.1016/j.apsusc.2018.12.062 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 54.74 Maschinelles Sehen VZ AR 473 2019 15 0415 1062-1065 4 |
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impact of kf-post deposition treatment on cu(in,ga)se2 surface and cu(in,ga)se2/cds interface sulfurization |
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Impact of KF-post deposition treatment on Cu(In,Ga)Se2 surface and Cu(In,Ga)Se2/CdS interface sulfurization |
| abstract |
• Cu(In,Ga)Se2 (CIGSe) absorber sulfurization is investigated. • First CIGSe is exposed to elemental sulfur vapor or KF treated under sulfur atmosphere. • KF enhances CIGSe sulfurization efficiency compared to process performed without K supply. • Then CdS is chemical bath deposited on CIGSe KF-post treated under Se atmosphere. • No CIGSe sulfurization is detected in this case at the CIGSe/CdS interface. |
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• Cu(In,Ga)Se2 (CIGSe) absorber sulfurization is investigated. • First CIGSe is exposed to elemental sulfur vapor or KF treated under sulfur atmosphere. • KF enhances CIGSe sulfurization efficiency compared to process performed without K supply. • Then CdS is chemical bath deposited on CIGSe KF-post treated under Se atmosphere. • No CIGSe sulfurization is detected in this case at the CIGSe/CdS interface. |
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• Cu(In,Ga)Se2 (CIGSe) absorber sulfurization is investigated. • First CIGSe is exposed to elemental sulfur vapor or KF treated under sulfur atmosphere. • KF enhances CIGSe sulfurization efficiency compared to process performed without K supply. • Then CdS is chemical bath deposited on CIGSe KF-post treated under Se atmosphere. • No CIGSe sulfurization is detected in this case at the CIGSe/CdS interface. |
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Impact of KF-post deposition treatment on Cu(In,Ga)Se2 surface and Cu(In,Ga)Se2/CdS interface sulfurization |
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10.1016/j.apsusc.2018.12.062 |
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2024-07-06T17:54:00.561Z |
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