Experimental and simulation results of optical beam induced current technique applied to wide bandgap semiconductors
Power electronic devices based on wide bandgap (WBG) semiconductors such as silicon carbide (SiC), gallium nitride (GaN) and diamond (C) offer better performances when compared to those based on silicon (Si). However, the peripheral protection of these devices must be carefully designed to sustain h...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Planson, Dominique [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2019transfer abstract |
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| Schlagwörter: |
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| Umfang: |
12 |
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| Übergeordnetes Werk: |
Enthalten in: Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate - Narattha, Chalermphan ELSEVIER, 2022, Amsterdam [u.a.] |
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| Übergeordnetes Werk: |
volume:94 ; year:2019 ; pages:116-127 ; extent:12 |
| Links: |
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| DOI / URN: |
10.1016/j.mssp.2019.01.042 |
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| Katalog-ID: |
ELV045792720 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | ELV045792720 | ||
| 003 | DE-627 | ||
| 005 | 20230626012314.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 191021s2019 xx |||||o 00| ||eng c | ||
| 024 | 7 | |a 10.1016/j.mssp.2019.01.042 |2 doi | |
| 028 | 5 | 2 | |a GBV00000000000521.pica |
| 035 | |a (DE-627)ELV045792720 | ||
| 035 | |a (ELSEVIER)S1369-8001(18)31718-9 | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 082 | 0 | 4 | |a 690 |q VZ |
| 084 | |a 56.45 |2 bkl | ||
| 100 | 1 | |a Planson, Dominique |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Experimental and simulation results of optical beam induced current technique applied to wide bandgap semiconductors |
| 264 | 1 | |c 2019transfer abstract | |
| 300 | |a 12 | ||
| 336 | |a nicht spezifiziert |b zzz |2 rdacontent | ||
| 337 | |a nicht spezifiziert |b z |2 rdamedia | ||
| 338 | |a nicht spezifiziert |b zu |2 rdacarrier | ||
| 520 | |a Power electronic devices based on wide bandgap (WBG) semiconductors such as silicon carbide (SiC), gallium nitride (GaN) and diamond (C) offer better performances when compared to those based on silicon (Si). However, the peripheral protection of these devices must be carefully designed to sustain high voltage bias. This paper shows how the OBIC (Optical Beam Induced Current) technique applied to WBG semiconductor devices could be useful to study the efficiency of different protection techniques. Firstly, a theoretical approach is given to present the this electro-optical characterization method. Then, it is performed on high voltage power devices in a vacuum chamber allowing to study the spatial distribution of the electric field in the semiconductor. In addition, comparisons with Finite Elements Methods using TCAD tools are performed showing the local high electric field strength. Results are mainly focused on SiC devices for the sake of availability. This paper shows additional results and measurements on GaN and diamond Schottky diodes also. Finally, extraction of OBIC signals allows to know some physical features like ionization coefficients, minority carrier lifetime and local defects in semiconductors as shown in the last section. | ||
| 520 | |a Power electronic devices based on wide bandgap (WBG) semiconductors such as silicon carbide (SiC), gallium nitride (GaN) and diamond (C) offer better performances when compared to those based on silicon (Si). However, the peripheral protection of these devices must be carefully designed to sustain high voltage bias. This paper shows how the OBIC (Optical Beam Induced Current) technique applied to WBG semiconductor devices could be useful to study the efficiency of different protection techniques. Firstly, a theoretical approach is given to present the this electro-optical characterization method. Then, it is performed on high voltage power devices in a vacuum chamber allowing to study the spatial distribution of the electric field in the semiconductor. In addition, comparisons with Finite Elements Methods using TCAD tools are performed showing the local high electric field strength. Results are mainly focused on SiC devices for the sake of availability. This paper shows additional results and measurements on GaN and diamond Schottky diodes also. Finally, extraction of OBIC signals allows to know some physical features like ionization coefficients, minority carrier lifetime and local defects in semiconductors as shown in the last section. | ||
| 650 | 7 | |a Optical device characterization |2 Elsevier | |
| 650 | 7 | |a Silicon carbide |2 Elsevier | |
| 650 | 7 | |a Diamond |2 Elsevier | |
| 650 | 7 | |a Power devices |2 Elsevier | |
| 650 | 7 | |a Gallium nitride |2 Elsevier | |
| 700 | 1 | |a Asllani, Besar |4 oth | |
| 700 | 1 | |a Phung, Luong-Viet |4 oth | |
| 700 | 1 | |a Bevilacqua, Pascal |4 oth | |
| 700 | 1 | |a Hamad, Hassan |4 oth | |
| 700 | 1 | |a Raynaud, Christophe |4 oth | |
| 773 | 0 | 8 | |i Enthalten in |n Elsevier Science |a Narattha, Chalermphan ELSEVIER |t Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate |d 2022 |g Amsterdam [u.a.] |w (DE-627)ELV007709056 |
| 773 | 1 | 8 | |g volume:94 |g year:2019 |g pages:116-127 |g extent:12 |
| 856 | 4 | 0 | |u https://doi.org/10.1016/j.mssp.2019.01.042 |3 Volltext |
| 912 | |a GBV_USEFLAG_U | ||
| 912 | |a GBV_ELV | ||
| 912 | |a SYSFLAG_U | ||
| 936 | b | k | |a 56.45 |j Baustoffkunde |q VZ |
| 951 | |a AR | ||
| 952 | |d 94 |j 2019 |h 116-127 |g 12 | ||
| author_variant |
d p dp |
|---|---|
| matchkey_str |
plansondominiqueasllanibesarphungluongvi:2019----:xeietlnsmltorslsfpiabaidcdurntcnqeple |
| hierarchy_sort_str |
2019transfer abstract |
| bklnumber |
56.45 |
| publishDate |
2019 |
| allfields |
10.1016/j.mssp.2019.01.042 doi GBV00000000000521.pica (DE-627)ELV045792720 (ELSEVIER)S1369-8001(18)31718-9 DE-627 ger DE-627 rakwb eng 690 VZ 56.45 bkl Planson, Dominique verfasserin aut Experimental and simulation results of optical beam induced current technique applied to wide bandgap semiconductors 2019transfer abstract 12 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Power electronic devices based on wide bandgap (WBG) semiconductors such as silicon carbide (SiC), gallium nitride (GaN) and diamond (C) offer better performances when compared to those based on silicon (Si). However, the peripheral protection of these devices must be carefully designed to sustain high voltage bias. This paper shows how the OBIC (Optical Beam Induced Current) technique applied to WBG semiconductor devices could be useful to study the efficiency of different protection techniques. Firstly, a theoretical approach is given to present the this electro-optical characterization method. Then, it is performed on high voltage power devices in a vacuum chamber allowing to study the spatial distribution of the electric field in the semiconductor. In addition, comparisons with Finite Elements Methods using TCAD tools are performed showing the local high electric field strength. Results are mainly focused on SiC devices for the sake of availability. This paper shows additional results and measurements on GaN and diamond Schottky diodes also. Finally, extraction of OBIC signals allows to know some physical features like ionization coefficients, minority carrier lifetime and local defects in semiconductors as shown in the last section. Power electronic devices based on wide bandgap (WBG) semiconductors such as silicon carbide (SiC), gallium nitride (GaN) and diamond (C) offer better performances when compared to those based on silicon (Si). However, the peripheral protection of these devices must be carefully designed to sustain high voltage bias. This paper shows how the OBIC (Optical Beam Induced Current) technique applied to WBG semiconductor devices could be useful to study the efficiency of different protection techniques. Firstly, a theoretical approach is given to present the this electro-optical characterization method. Then, it is performed on high voltage power devices in a vacuum chamber allowing to study the spatial distribution of the electric field in the semiconductor. In addition, comparisons with Finite Elements Methods using TCAD tools are performed showing the local high electric field strength. Results are mainly focused on SiC devices for the sake of availability. This paper shows additional results and measurements on GaN and diamond Schottky diodes also. Finally, extraction of OBIC signals allows to know some physical features like ionization coefficients, minority carrier lifetime and local defects in semiconductors as shown in the last section. Optical device characterization Elsevier Silicon carbide Elsevier Diamond Elsevier Power devices Elsevier Gallium nitride Elsevier Asllani, Besar oth Phung, Luong-Viet oth Bevilacqua, Pascal oth Hamad, Hassan oth Raynaud, Christophe oth Enthalten in Elsevier Science Narattha, Chalermphan ELSEVIER Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate 2022 Amsterdam [u.a.] (DE-627)ELV007709056 volume:94 year:2019 pages:116-127 extent:12 https://doi.org/10.1016/j.mssp.2019.01.042 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.45 Baustoffkunde VZ AR 94 2019 116-127 12 |
| spelling |
10.1016/j.mssp.2019.01.042 doi GBV00000000000521.pica (DE-627)ELV045792720 (ELSEVIER)S1369-8001(18)31718-9 DE-627 ger DE-627 rakwb eng 690 VZ 56.45 bkl Planson, Dominique verfasserin aut Experimental and simulation results of optical beam induced current technique applied to wide bandgap semiconductors 2019transfer abstract 12 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Power electronic devices based on wide bandgap (WBG) semiconductors such as silicon carbide (SiC), gallium nitride (GaN) and diamond (C) offer better performances when compared to those based on silicon (Si). However, the peripheral protection of these devices must be carefully designed to sustain high voltage bias. This paper shows how the OBIC (Optical Beam Induced Current) technique applied to WBG semiconductor devices could be useful to study the efficiency of different protection techniques. Firstly, a theoretical approach is given to present the this electro-optical characterization method. Then, it is performed on high voltage power devices in a vacuum chamber allowing to study the spatial distribution of the electric field in the semiconductor. In addition, comparisons with Finite Elements Methods using TCAD tools are performed showing the local high electric field strength. Results are mainly focused on SiC devices for the sake of availability. This paper shows additional results and measurements on GaN and diamond Schottky diodes also. Finally, extraction of OBIC signals allows to know some physical features like ionization coefficients, minority carrier lifetime and local defects in semiconductors as shown in the last section. Power electronic devices based on wide bandgap (WBG) semiconductors such as silicon carbide (SiC), gallium nitride (GaN) and diamond (C) offer better performances when compared to those based on silicon (Si). However, the peripheral protection of these devices must be carefully designed to sustain high voltage bias. This paper shows how the OBIC (Optical Beam Induced Current) technique applied to WBG semiconductor devices could be useful to study the efficiency of different protection techniques. Firstly, a theoretical approach is given to present the this electro-optical characterization method. Then, it is performed on high voltage power devices in a vacuum chamber allowing to study the spatial distribution of the electric field in the semiconductor. In addition, comparisons with Finite Elements Methods using TCAD tools are performed showing the local high electric field strength. Results are mainly focused on SiC devices for the sake of availability. This paper shows additional results and measurements on GaN and diamond Schottky diodes also. Finally, extraction of OBIC signals allows to know some physical features like ionization coefficients, minority carrier lifetime and local defects in semiconductors as shown in the last section. Optical device characterization Elsevier Silicon carbide Elsevier Diamond Elsevier Power devices Elsevier Gallium nitride Elsevier Asllani, Besar oth Phung, Luong-Viet oth Bevilacqua, Pascal oth Hamad, Hassan oth Raynaud, Christophe oth Enthalten in Elsevier Science Narattha, Chalermphan ELSEVIER Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate 2022 Amsterdam [u.a.] (DE-627)ELV007709056 volume:94 year:2019 pages:116-127 extent:12 https://doi.org/10.1016/j.mssp.2019.01.042 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.45 Baustoffkunde VZ AR 94 2019 116-127 12 |
| allfields_unstemmed |
10.1016/j.mssp.2019.01.042 doi GBV00000000000521.pica (DE-627)ELV045792720 (ELSEVIER)S1369-8001(18)31718-9 DE-627 ger DE-627 rakwb eng 690 VZ 56.45 bkl Planson, Dominique verfasserin aut Experimental and simulation results of optical beam induced current technique applied to wide bandgap semiconductors 2019transfer abstract 12 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Power electronic devices based on wide bandgap (WBG) semiconductors such as silicon carbide (SiC), gallium nitride (GaN) and diamond (C) offer better performances when compared to those based on silicon (Si). However, the peripheral protection of these devices must be carefully designed to sustain high voltage bias. This paper shows how the OBIC (Optical Beam Induced Current) technique applied to WBG semiconductor devices could be useful to study the efficiency of different protection techniques. Firstly, a theoretical approach is given to present the this electro-optical characterization method. Then, it is performed on high voltage power devices in a vacuum chamber allowing to study the spatial distribution of the electric field in the semiconductor. In addition, comparisons with Finite Elements Methods using TCAD tools are performed showing the local high electric field strength. Results are mainly focused on SiC devices for the sake of availability. This paper shows additional results and measurements on GaN and diamond Schottky diodes also. Finally, extraction of OBIC signals allows to know some physical features like ionization coefficients, minority carrier lifetime and local defects in semiconductors as shown in the last section. Power electronic devices based on wide bandgap (WBG) semiconductors such as silicon carbide (SiC), gallium nitride (GaN) and diamond (C) offer better performances when compared to those based on silicon (Si). However, the peripheral protection of these devices must be carefully designed to sustain high voltage bias. This paper shows how the OBIC (Optical Beam Induced Current) technique applied to WBG semiconductor devices could be useful to study the efficiency of different protection techniques. Firstly, a theoretical approach is given to present the this electro-optical characterization method. Then, it is performed on high voltage power devices in a vacuum chamber allowing to study the spatial distribution of the electric field in the semiconductor. In addition, comparisons with Finite Elements Methods using TCAD tools are performed showing the local high electric field strength. Results are mainly focused on SiC devices for the sake of availability. This paper shows additional results and measurements on GaN and diamond Schottky diodes also. Finally, extraction of OBIC signals allows to know some physical features like ionization coefficients, minority carrier lifetime and local defects in semiconductors as shown in the last section. Optical device characterization Elsevier Silicon carbide Elsevier Diamond Elsevier Power devices Elsevier Gallium nitride Elsevier Asllani, Besar oth Phung, Luong-Viet oth Bevilacqua, Pascal oth Hamad, Hassan oth Raynaud, Christophe oth Enthalten in Elsevier Science Narattha, Chalermphan ELSEVIER Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate 2022 Amsterdam [u.a.] (DE-627)ELV007709056 volume:94 year:2019 pages:116-127 extent:12 https://doi.org/10.1016/j.mssp.2019.01.042 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.45 Baustoffkunde VZ AR 94 2019 116-127 12 |
| allfieldsGer |
10.1016/j.mssp.2019.01.042 doi GBV00000000000521.pica (DE-627)ELV045792720 (ELSEVIER)S1369-8001(18)31718-9 DE-627 ger DE-627 rakwb eng 690 VZ 56.45 bkl Planson, Dominique verfasserin aut Experimental and simulation results of optical beam induced current technique applied to wide bandgap semiconductors 2019transfer abstract 12 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Power electronic devices based on wide bandgap (WBG) semiconductors such as silicon carbide (SiC), gallium nitride (GaN) and diamond (C) offer better performances when compared to those based on silicon (Si). However, the peripheral protection of these devices must be carefully designed to sustain high voltage bias. This paper shows how the OBIC (Optical Beam Induced Current) technique applied to WBG semiconductor devices could be useful to study the efficiency of different protection techniques. Firstly, a theoretical approach is given to present the this electro-optical characterization method. Then, it is performed on high voltage power devices in a vacuum chamber allowing to study the spatial distribution of the electric field in the semiconductor. In addition, comparisons with Finite Elements Methods using TCAD tools are performed showing the local high electric field strength. Results are mainly focused on SiC devices for the sake of availability. This paper shows additional results and measurements on GaN and diamond Schottky diodes also. Finally, extraction of OBIC signals allows to know some physical features like ionization coefficients, minority carrier lifetime and local defects in semiconductors as shown in the last section. Power electronic devices based on wide bandgap (WBG) semiconductors such as silicon carbide (SiC), gallium nitride (GaN) and diamond (C) offer better performances when compared to those based on silicon (Si). However, the peripheral protection of these devices must be carefully designed to sustain high voltage bias. This paper shows how the OBIC (Optical Beam Induced Current) technique applied to WBG semiconductor devices could be useful to study the efficiency of different protection techniques. Firstly, a theoretical approach is given to present the this electro-optical characterization method. Then, it is performed on high voltage power devices in a vacuum chamber allowing to study the spatial distribution of the electric field in the semiconductor. In addition, comparisons with Finite Elements Methods using TCAD tools are performed showing the local high electric field strength. Results are mainly focused on SiC devices for the sake of availability. This paper shows additional results and measurements on GaN and diamond Schottky diodes also. Finally, extraction of OBIC signals allows to know some physical features like ionization coefficients, minority carrier lifetime and local defects in semiconductors as shown in the last section. Optical device characterization Elsevier Silicon carbide Elsevier Diamond Elsevier Power devices Elsevier Gallium nitride Elsevier Asllani, Besar oth Phung, Luong-Viet oth Bevilacqua, Pascal oth Hamad, Hassan oth Raynaud, Christophe oth Enthalten in Elsevier Science Narattha, Chalermphan ELSEVIER Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate 2022 Amsterdam [u.a.] (DE-627)ELV007709056 volume:94 year:2019 pages:116-127 extent:12 https://doi.org/10.1016/j.mssp.2019.01.042 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.45 Baustoffkunde VZ AR 94 2019 116-127 12 |
| allfieldsSound |
10.1016/j.mssp.2019.01.042 doi GBV00000000000521.pica (DE-627)ELV045792720 (ELSEVIER)S1369-8001(18)31718-9 DE-627 ger DE-627 rakwb eng 690 VZ 56.45 bkl Planson, Dominique verfasserin aut Experimental and simulation results of optical beam induced current technique applied to wide bandgap semiconductors 2019transfer abstract 12 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Power electronic devices based on wide bandgap (WBG) semiconductors such as silicon carbide (SiC), gallium nitride (GaN) and diamond (C) offer better performances when compared to those based on silicon (Si). However, the peripheral protection of these devices must be carefully designed to sustain high voltage bias. This paper shows how the OBIC (Optical Beam Induced Current) technique applied to WBG semiconductor devices could be useful to study the efficiency of different protection techniques. Firstly, a theoretical approach is given to present the this electro-optical characterization method. Then, it is performed on high voltage power devices in a vacuum chamber allowing to study the spatial distribution of the electric field in the semiconductor. In addition, comparisons with Finite Elements Methods using TCAD tools are performed showing the local high electric field strength. Results are mainly focused on SiC devices for the sake of availability. This paper shows additional results and measurements on GaN and diamond Schottky diodes also. Finally, extraction of OBIC signals allows to know some physical features like ionization coefficients, minority carrier lifetime and local defects in semiconductors as shown in the last section. Power electronic devices based on wide bandgap (WBG) semiconductors such as silicon carbide (SiC), gallium nitride (GaN) and diamond (C) offer better performances when compared to those based on silicon (Si). However, the peripheral protection of these devices must be carefully designed to sustain high voltage bias. This paper shows how the OBIC (Optical Beam Induced Current) technique applied to WBG semiconductor devices could be useful to study the efficiency of different protection techniques. Firstly, a theoretical approach is given to present the this electro-optical characterization method. Then, it is performed on high voltage power devices in a vacuum chamber allowing to study the spatial distribution of the electric field in the semiconductor. In addition, comparisons with Finite Elements Methods using TCAD tools are performed showing the local high electric field strength. Results are mainly focused on SiC devices for the sake of availability. This paper shows additional results and measurements on GaN and diamond Schottky diodes also. Finally, extraction of OBIC signals allows to know some physical features like ionization coefficients, minority carrier lifetime and local defects in semiconductors as shown in the last section. Optical device characterization Elsevier Silicon carbide Elsevier Diamond Elsevier Power devices Elsevier Gallium nitride Elsevier Asllani, Besar oth Phung, Luong-Viet oth Bevilacqua, Pascal oth Hamad, Hassan oth Raynaud, Christophe oth Enthalten in Elsevier Science Narattha, Chalermphan ELSEVIER Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate 2022 Amsterdam [u.a.] (DE-627)ELV007709056 volume:94 year:2019 pages:116-127 extent:12 https://doi.org/10.1016/j.mssp.2019.01.042 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.45 Baustoffkunde VZ AR 94 2019 116-127 12 |
| language |
English |
| source |
Enthalten in Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate Amsterdam [u.a.] volume:94 year:2019 pages:116-127 extent:12 |
| sourceStr |
Enthalten in Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate Amsterdam [u.a.] volume:94 year:2019 pages:116-127 extent:12 |
| format_phy_str_mv |
Article |
| bklname |
Baustoffkunde |
| institution |
findex.gbv.de |
| topic_facet |
Optical device characterization Silicon carbide Diamond Power devices Gallium nitride |
| dewey-raw |
690 |
| isfreeaccess_bool |
false |
| container_title |
Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate |
| authorswithroles_txt_mv |
Planson, Dominique @@aut@@ Asllani, Besar @@oth@@ Phung, Luong-Viet @@oth@@ Bevilacqua, Pascal @@oth@@ Hamad, Hassan @@oth@@ Raynaud, Christophe @@oth@@ |
| publishDateDaySort_date |
2019-01-01T00:00:00Z |
| hierarchy_top_id |
ELV007709056 |
| dewey-sort |
3690 |
| id |
ELV045792720 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV045792720</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230626012314.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">191021s2019 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.mssp.2019.01.042</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">GBV00000000000521.pica</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV045792720</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S1369-8001(18)31718-9</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">690</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">56.45</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Planson, Dominique</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Experimental and simulation results of optical beam induced current technique applied to wide bandgap semiconductors</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2019transfer abstract</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">12</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Power electronic devices based on wide bandgap (WBG) semiconductors such as silicon carbide (SiC), gallium nitride (GaN) and diamond (C) offer better performances when compared to those based on silicon (Si). However, the peripheral protection of these devices must be carefully designed to sustain high voltage bias. This paper shows how the OBIC (Optical Beam Induced Current) technique applied to WBG semiconductor devices could be useful to study the efficiency of different protection techniques. Firstly, a theoretical approach is given to present the this electro-optical characterization method. Then, it is performed on high voltage power devices in a vacuum chamber allowing to study the spatial distribution of the electric field in the semiconductor. In addition, comparisons with Finite Elements Methods using TCAD tools are performed showing the local high electric field strength. Results are mainly focused on SiC devices for the sake of availability. This paper shows additional results and measurements on GaN and diamond Schottky diodes also. Finally, extraction of OBIC signals allows to know some physical features like ionization coefficients, minority carrier lifetime and local defects in semiconductors as shown in the last section.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Power electronic devices based on wide bandgap (WBG) semiconductors such as silicon carbide (SiC), gallium nitride (GaN) and diamond (C) offer better performances when compared to those based on silicon (Si). However, the peripheral protection of these devices must be carefully designed to sustain high voltage bias. This paper shows how the OBIC (Optical Beam Induced Current) technique applied to WBG semiconductor devices could be useful to study the efficiency of different protection techniques. Firstly, a theoretical approach is given to present the this electro-optical characterization method. Then, it is performed on high voltage power devices in a vacuum chamber allowing to study the spatial distribution of the electric field in the semiconductor. In addition, comparisons with Finite Elements Methods using TCAD tools are performed showing the local high electric field strength. Results are mainly focused on SiC devices for the sake of availability. This paper shows additional results and measurements on GaN and diamond Schottky diodes also. Finally, extraction of OBIC signals allows to know some physical features like ionization coefficients, minority carrier lifetime and local defects in semiconductors as shown in the last section.</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Optical device characterization</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Silicon carbide</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Diamond</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Power devices</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Gallium nitride</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Asllani, Besar</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Phung, Luong-Viet</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Bevilacqua, Pascal</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Hamad, Hassan</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Raynaud, Christophe</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="n">Elsevier Science</subfield><subfield code="a">Narattha, Chalermphan ELSEVIER</subfield><subfield code="t">Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate</subfield><subfield code="d">2022</subfield><subfield code="g">Amsterdam [u.a.]</subfield><subfield code="w">(DE-627)ELV007709056</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:94</subfield><subfield code="g">year:2019</subfield><subfield code="g">pages:116-127</subfield><subfield code="g">extent:12</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1016/j.mssp.2019.01.042</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">56.45</subfield><subfield code="j">Baustoffkunde</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">94</subfield><subfield code="j">2019</subfield><subfield code="h">116-127</subfield><subfield code="g">12</subfield></datafield></record></collection>
|
| author |
Planson, Dominique |
| spellingShingle |
Planson, Dominique ddc 690 bkl 56.45 Elsevier Optical device characterization Elsevier Silicon carbide Elsevier Diamond Elsevier Power devices Elsevier Gallium nitride Experimental and simulation results of optical beam induced current technique applied to wide bandgap semiconductors |
| authorStr |
Planson, Dominique |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)ELV007709056 |
| format |
electronic Article |
| dewey-ones |
690 - Buildings |
| delete_txt_mv |
keep |
| author_role |
aut |
| collection |
elsevier |
| remote_str |
true |
| illustrated |
Not Illustrated |
| topic_title |
690 VZ 56.45 bkl Experimental and simulation results of optical beam induced current technique applied to wide bandgap semiconductors Optical device characterization Elsevier Silicon carbide Elsevier Diamond Elsevier Power devices Elsevier Gallium nitride Elsevier |
| topic |
ddc 690 bkl 56.45 Elsevier Optical device characterization Elsevier Silicon carbide Elsevier Diamond Elsevier Power devices Elsevier Gallium nitride |
| topic_unstemmed |
ddc 690 bkl 56.45 Elsevier Optical device characterization Elsevier Silicon carbide Elsevier Diamond Elsevier Power devices Elsevier Gallium nitride |
| topic_browse |
ddc 690 bkl 56.45 Elsevier Optical device characterization Elsevier Silicon carbide Elsevier Diamond Elsevier Power devices Elsevier Gallium nitride |
| format_facet |
Elektronische Aufsätze Aufsätze Elektronische Ressource |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
zu |
| author2_variant |
b a ba l v p lvp p b pb h h hh c r cr |
| hierarchy_parent_title |
Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate |
| hierarchy_parent_id |
ELV007709056 |
| dewey-tens |
690 - Building & construction |
| hierarchy_top_title |
Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)ELV007709056 |
| title |
Experimental and simulation results of optical beam induced current technique applied to wide bandgap semiconductors |
| ctrlnum |
(DE-627)ELV045792720 (ELSEVIER)S1369-8001(18)31718-9 |
| title_full |
Experimental and simulation results of optical beam induced current technique applied to wide bandgap semiconductors |
| author_sort |
Planson, Dominique |
| journal |
Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate |
| journalStr |
Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
600 - Technology |
| recordtype |
marc |
| publishDateSort |
2019 |
| contenttype_str_mv |
zzz |
| container_start_page |
116 |
| author_browse |
Planson, Dominique |
| container_volume |
94 |
| physical |
12 |
| class |
690 VZ 56.45 bkl |
| format_se |
Elektronische Aufsätze |
| author-letter |
Planson, Dominique |
| doi_str_mv |
10.1016/j.mssp.2019.01.042 |
| dewey-full |
690 |
| title_sort |
experimental and simulation results of optical beam induced current technique applied to wide bandgap semiconductors |
| title_auth |
Experimental and simulation results of optical beam induced current technique applied to wide bandgap semiconductors |
| abstract |
Power electronic devices based on wide bandgap (WBG) semiconductors such as silicon carbide (SiC), gallium nitride (GaN) and diamond (C) offer better performances when compared to those based on silicon (Si). However, the peripheral protection of these devices must be carefully designed to sustain high voltage bias. This paper shows how the OBIC (Optical Beam Induced Current) technique applied to WBG semiconductor devices could be useful to study the efficiency of different protection techniques. Firstly, a theoretical approach is given to present the this electro-optical characterization method. Then, it is performed on high voltage power devices in a vacuum chamber allowing to study the spatial distribution of the electric field in the semiconductor. In addition, comparisons with Finite Elements Methods using TCAD tools are performed showing the local high electric field strength. Results are mainly focused on SiC devices for the sake of availability. This paper shows additional results and measurements on GaN and diamond Schottky diodes also. Finally, extraction of OBIC signals allows to know some physical features like ionization coefficients, minority carrier lifetime and local defects in semiconductors as shown in the last section. |
| abstractGer |
Power electronic devices based on wide bandgap (WBG) semiconductors such as silicon carbide (SiC), gallium nitride (GaN) and diamond (C) offer better performances when compared to those based on silicon (Si). However, the peripheral protection of these devices must be carefully designed to sustain high voltage bias. This paper shows how the OBIC (Optical Beam Induced Current) technique applied to WBG semiconductor devices could be useful to study the efficiency of different protection techniques. Firstly, a theoretical approach is given to present the this electro-optical characterization method. Then, it is performed on high voltage power devices in a vacuum chamber allowing to study the spatial distribution of the electric field in the semiconductor. In addition, comparisons with Finite Elements Methods using TCAD tools are performed showing the local high electric field strength. Results are mainly focused on SiC devices for the sake of availability. This paper shows additional results and measurements on GaN and diamond Schottky diodes also. Finally, extraction of OBIC signals allows to know some physical features like ionization coefficients, minority carrier lifetime and local defects in semiconductors as shown in the last section. |
| abstract_unstemmed |
Power electronic devices based on wide bandgap (WBG) semiconductors such as silicon carbide (SiC), gallium nitride (GaN) and diamond (C) offer better performances when compared to those based on silicon (Si). However, the peripheral protection of these devices must be carefully designed to sustain high voltage bias. This paper shows how the OBIC (Optical Beam Induced Current) technique applied to WBG semiconductor devices could be useful to study the efficiency of different protection techniques. Firstly, a theoretical approach is given to present the this electro-optical characterization method. Then, it is performed on high voltage power devices in a vacuum chamber allowing to study the spatial distribution of the electric field in the semiconductor. In addition, comparisons with Finite Elements Methods using TCAD tools are performed showing the local high electric field strength. Results are mainly focused on SiC devices for the sake of availability. This paper shows additional results and measurements on GaN and diamond Schottky diodes also. Finally, extraction of OBIC signals allows to know some physical features like ionization coefficients, minority carrier lifetime and local defects in semiconductors as shown in the last section. |
| collection_details |
GBV_USEFLAG_U GBV_ELV SYSFLAG_U |
| title_short |
Experimental and simulation results of optical beam induced current technique applied to wide bandgap semiconductors |
| url |
https://doi.org/10.1016/j.mssp.2019.01.042 |
| remote_bool |
true |
| author2 |
Asllani, Besar Phung, Luong-Viet Bevilacqua, Pascal Hamad, Hassan Raynaud, Christophe |
| author2Str |
Asllani, Besar Phung, Luong-Viet Bevilacqua, Pascal Hamad, Hassan Raynaud, Christophe |
| ppnlink |
ELV007709056 |
| mediatype_str_mv |
z |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| author2_role |
oth oth oth oth oth |
| doi_str |
10.1016/j.mssp.2019.01.042 |
| up_date |
2024-07-06T18:30:13.003Z |
| _version_ |
1803855449820233728 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV045792720</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230626012314.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">191021s2019 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.mssp.2019.01.042</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">GBV00000000000521.pica</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV045792720</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S1369-8001(18)31718-9</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">690</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">56.45</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Planson, Dominique</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Experimental and simulation results of optical beam induced current technique applied to wide bandgap semiconductors</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2019transfer abstract</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">12</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Power electronic devices based on wide bandgap (WBG) semiconductors such as silicon carbide (SiC), gallium nitride (GaN) and diamond (C) offer better performances when compared to those based on silicon (Si). However, the peripheral protection of these devices must be carefully designed to sustain high voltage bias. This paper shows how the OBIC (Optical Beam Induced Current) technique applied to WBG semiconductor devices could be useful to study the efficiency of different protection techniques. Firstly, a theoretical approach is given to present the this electro-optical characterization method. Then, it is performed on high voltage power devices in a vacuum chamber allowing to study the spatial distribution of the electric field in the semiconductor. In addition, comparisons with Finite Elements Methods using TCAD tools are performed showing the local high electric field strength. Results are mainly focused on SiC devices for the sake of availability. This paper shows additional results and measurements on GaN and diamond Schottky diodes also. Finally, extraction of OBIC signals allows to know some physical features like ionization coefficients, minority carrier lifetime and local defects in semiconductors as shown in the last section.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Power electronic devices based on wide bandgap (WBG) semiconductors such as silicon carbide (SiC), gallium nitride (GaN) and diamond (C) offer better performances when compared to those based on silicon (Si). However, the peripheral protection of these devices must be carefully designed to sustain high voltage bias. This paper shows how the OBIC (Optical Beam Induced Current) technique applied to WBG semiconductor devices could be useful to study the efficiency of different protection techniques. Firstly, a theoretical approach is given to present the this electro-optical characterization method. Then, it is performed on high voltage power devices in a vacuum chamber allowing to study the spatial distribution of the electric field in the semiconductor. In addition, comparisons with Finite Elements Methods using TCAD tools are performed showing the local high electric field strength. Results are mainly focused on SiC devices for the sake of availability. This paper shows additional results and measurements on GaN and diamond Schottky diodes also. Finally, extraction of OBIC signals allows to know some physical features like ionization coefficients, minority carrier lifetime and local defects in semiconductors as shown in the last section.</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Optical device characterization</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Silicon carbide</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Diamond</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Power devices</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Gallium nitride</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Asllani, Besar</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Phung, Luong-Viet</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Bevilacqua, Pascal</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Hamad, Hassan</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Raynaud, Christophe</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="n">Elsevier Science</subfield><subfield code="a">Narattha, Chalermphan ELSEVIER</subfield><subfield code="t">Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate</subfield><subfield code="d">2022</subfield><subfield code="g">Amsterdam [u.a.]</subfield><subfield code="w">(DE-627)ELV007709056</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:94</subfield><subfield code="g">year:2019</subfield><subfield code="g">pages:116-127</subfield><subfield code="g">extent:12</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1016/j.mssp.2019.01.042</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">56.45</subfield><subfield code="j">Baustoffkunde</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">94</subfield><subfield code="j">2019</subfield><subfield code="h">116-127</subfield><subfield code="g">12</subfield></datafield></record></collection>
|
| score |
7.401865 |