Effect of deposition rate on the growth mechanism of microcrystalline silicon thin films using very high frequency PECVD
The intrinsic microcrystalline silicon thin films were deposited by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD). Two series of films with different deposition rate 0.30 nm/s and 1.94 nm/s were prepared. The film surface and gas phase reaction growth processes were monit...
Ausführliche Beschreibung
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| Autor*in: |
Li, Xinli [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2019transfer abstract |
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| Umfang: |
9 |
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| Übergeordnetes Werk: |
Enthalten in: Tracking variation of fluorescent dissolved organic matter during full-scale printing and dyeing wastewater treatment - Cheng, Cheng ELSEVIER, 2020, international journal for light and electron optics : official journal of the German Society of Applied Optics and the German Society of Electron Microscopy, München |
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| Übergeordnetes Werk: |
volume:180 ; year:2019 ; pages:104-112 ; extent:9 |
| Links: |
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| DOI / URN: |
10.1016/j.ijleo.2018.11.082 |
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ELV046066039 |
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| 520 | |a The intrinsic microcrystalline silicon thin films were deposited by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD). Two series of films with different deposition rate 0.30 nm/s and 1.94 nm/s were prepared. The film surface and gas phase reaction growth processes were monitored with real-time spectroscopic ellipsometry and optical emission spectroscopy. The effect of deposition rate on the microcrystalline silicon thin film growth mechanism has been studied. The microcrystalline silicon surface growth was analyzed with KPZ model. The results show that the growth exponent of β is 0.448 for the films with low deposition rate, and the growth exponent of β is 0.302 for the films with high deposition rate. The growth exponent does not increase with deposition rate, but declines. And the reasons for this phenomenon were explained. | ||
| 520 | |a The intrinsic microcrystalline silicon thin films were deposited by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD). Two series of films with different deposition rate 0.30 nm/s and 1.94 nm/s were prepared. The film surface and gas phase reaction growth processes were monitored with real-time spectroscopic ellipsometry and optical emission spectroscopy. The effect of deposition rate on the microcrystalline silicon thin film growth mechanism has been studied. The microcrystalline silicon surface growth was analyzed with KPZ model. The results show that the growth exponent of β is 0.448 for the films with low deposition rate, and the growth exponent of β is 0.302 for the films with high deposition rate. The growth exponent does not increase with deposition rate, but declines. And the reasons for this phenomenon were explained. | ||
| 650 | 7 | |a Optical emission spectrum |2 Elsevier | |
| 650 | 7 | |a Microcrystalline silicon |2 Elsevier | |
| 650 | 7 | |a Real time spectroscopic ellipsometry |2 Elsevier | |
| 650 | 7 | |a Growth mechanism |2 Elsevier | |
| 650 | 7 | |a High rate deposition |2 Elsevier | |
| 700 | 1 | |a Jin, Ruimin |4 oth | |
| 700 | 1 | |a Li, Lihua |4 oth | |
| 700 | 1 | |a Lu, Jingxiao |4 oth | |
| 700 | 1 | |a Gu, Yongjun |4 oth | |
| 700 | 1 | |a Ren, Fengzhang |4 oth | |
| 700 | 1 | |a Huang, Jinliang |4 oth | |
| 773 | 0 | 8 | |i Enthalten in |n Elsevier |a Cheng, Cheng ELSEVIER |t Tracking variation of fluorescent dissolved organic matter during full-scale printing and dyeing wastewater treatment |d 2020 |d international journal for light and electron optics : official journal of the German Society of Applied Optics and the German Society of Electron Microscopy |g München |w (DE-627)ELV004102533 |
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10.1016/j.ijleo.2018.11.082 doi GBV00000000000548.pica (DE-627)ELV046066039 (ELSEVIER)S0030-4026(18)31838-2 DE-627 ger DE-627 rakwb eng 333.7 VZ 43.00 bkl Li, Xinli verfasserin aut Effect of deposition rate on the growth mechanism of microcrystalline silicon thin films using very high frequency PECVD 2019transfer abstract 9 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The intrinsic microcrystalline silicon thin films were deposited by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD). Two series of films with different deposition rate 0.30 nm/s and 1.94 nm/s were prepared. The film surface and gas phase reaction growth processes were monitored with real-time spectroscopic ellipsometry and optical emission spectroscopy. The effect of deposition rate on the microcrystalline silicon thin film growth mechanism has been studied. The microcrystalline silicon surface growth was analyzed with KPZ model. The results show that the growth exponent of β is 0.448 for the films with low deposition rate, and the growth exponent of β is 0.302 for the films with high deposition rate. The growth exponent does not increase with deposition rate, but declines. And the reasons for this phenomenon were explained. The intrinsic microcrystalline silicon thin films were deposited by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD). Two series of films with different deposition rate 0.30 nm/s and 1.94 nm/s were prepared. The film surface and gas phase reaction growth processes were monitored with real-time spectroscopic ellipsometry and optical emission spectroscopy. The effect of deposition rate on the microcrystalline silicon thin film growth mechanism has been studied. The microcrystalline silicon surface growth was analyzed with KPZ model. The results show that the growth exponent of β is 0.448 for the films with low deposition rate, and the growth exponent of β is 0.302 for the films with high deposition rate. The growth exponent does not increase with deposition rate, but declines. And the reasons for this phenomenon were explained. Optical emission spectrum Elsevier Microcrystalline silicon Elsevier Real time spectroscopic ellipsometry Elsevier Growth mechanism Elsevier High rate deposition Elsevier Jin, Ruimin oth Li, Lihua oth Lu, Jingxiao oth Gu, Yongjun oth Ren, Fengzhang oth Huang, Jinliang oth Enthalten in Elsevier Cheng, Cheng ELSEVIER Tracking variation of fluorescent dissolved organic matter during full-scale printing and dyeing wastewater treatment 2020 international journal for light and electron optics : official journal of the German Society of Applied Optics and the German Society of Electron Microscopy München (DE-627)ELV004102533 volume:180 year:2019 pages:104-112 extent:9 https://doi.org/10.1016/j.ijleo.2018.11.082 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA SSG-OPC-GGO 43.00 Umweltforschung Umweltschutz: Allgemeines VZ AR 180 2019 104-112 9 |
| spelling |
10.1016/j.ijleo.2018.11.082 doi GBV00000000000548.pica (DE-627)ELV046066039 (ELSEVIER)S0030-4026(18)31838-2 DE-627 ger DE-627 rakwb eng 333.7 VZ 43.00 bkl Li, Xinli verfasserin aut Effect of deposition rate on the growth mechanism of microcrystalline silicon thin films using very high frequency PECVD 2019transfer abstract 9 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The intrinsic microcrystalline silicon thin films were deposited by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD). Two series of films with different deposition rate 0.30 nm/s and 1.94 nm/s were prepared. The film surface and gas phase reaction growth processes were monitored with real-time spectroscopic ellipsometry and optical emission spectroscopy. The effect of deposition rate on the microcrystalline silicon thin film growth mechanism has been studied. The microcrystalline silicon surface growth was analyzed with KPZ model. The results show that the growth exponent of β is 0.448 for the films with low deposition rate, and the growth exponent of β is 0.302 for the films with high deposition rate. The growth exponent does not increase with deposition rate, but declines. And the reasons for this phenomenon were explained. The intrinsic microcrystalline silicon thin films were deposited by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD). Two series of films with different deposition rate 0.30 nm/s and 1.94 nm/s were prepared. The film surface and gas phase reaction growth processes were monitored with real-time spectroscopic ellipsometry and optical emission spectroscopy. The effect of deposition rate on the microcrystalline silicon thin film growth mechanism has been studied. The microcrystalline silicon surface growth was analyzed with KPZ model. The results show that the growth exponent of β is 0.448 for the films with low deposition rate, and the growth exponent of β is 0.302 for the films with high deposition rate. The growth exponent does not increase with deposition rate, but declines. And the reasons for this phenomenon were explained. Optical emission spectrum Elsevier Microcrystalline silicon Elsevier Real time spectroscopic ellipsometry Elsevier Growth mechanism Elsevier High rate deposition Elsevier Jin, Ruimin oth Li, Lihua oth Lu, Jingxiao oth Gu, Yongjun oth Ren, Fengzhang oth Huang, Jinliang oth Enthalten in Elsevier Cheng, Cheng ELSEVIER Tracking variation of fluorescent dissolved organic matter during full-scale printing and dyeing wastewater treatment 2020 international journal for light and electron optics : official journal of the German Society of Applied Optics and the German Society of Electron Microscopy München (DE-627)ELV004102533 volume:180 year:2019 pages:104-112 extent:9 https://doi.org/10.1016/j.ijleo.2018.11.082 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA SSG-OPC-GGO 43.00 Umweltforschung Umweltschutz: Allgemeines VZ AR 180 2019 104-112 9 |
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10.1016/j.ijleo.2018.11.082 doi GBV00000000000548.pica (DE-627)ELV046066039 (ELSEVIER)S0030-4026(18)31838-2 DE-627 ger DE-627 rakwb eng 333.7 VZ 43.00 bkl Li, Xinli verfasserin aut Effect of deposition rate on the growth mechanism of microcrystalline silicon thin films using very high frequency PECVD 2019transfer abstract 9 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The intrinsic microcrystalline silicon thin films were deposited by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD). Two series of films with different deposition rate 0.30 nm/s and 1.94 nm/s were prepared. The film surface and gas phase reaction growth processes were monitored with real-time spectroscopic ellipsometry and optical emission spectroscopy. The effect of deposition rate on the microcrystalline silicon thin film growth mechanism has been studied. The microcrystalline silicon surface growth was analyzed with KPZ model. The results show that the growth exponent of β is 0.448 for the films with low deposition rate, and the growth exponent of β is 0.302 for the films with high deposition rate. The growth exponent does not increase with deposition rate, but declines. And the reasons for this phenomenon were explained. The intrinsic microcrystalline silicon thin films were deposited by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD). Two series of films with different deposition rate 0.30 nm/s and 1.94 nm/s were prepared. The film surface and gas phase reaction growth processes were monitored with real-time spectroscopic ellipsometry and optical emission spectroscopy. The effect of deposition rate on the microcrystalline silicon thin film growth mechanism has been studied. The microcrystalline silicon surface growth was analyzed with KPZ model. The results show that the growth exponent of β is 0.448 for the films with low deposition rate, and the growth exponent of β is 0.302 for the films with high deposition rate. The growth exponent does not increase with deposition rate, but declines. And the reasons for this phenomenon were explained. Optical emission spectrum Elsevier Microcrystalline silicon Elsevier Real time spectroscopic ellipsometry Elsevier Growth mechanism Elsevier High rate deposition Elsevier Jin, Ruimin oth Li, Lihua oth Lu, Jingxiao oth Gu, Yongjun oth Ren, Fengzhang oth Huang, Jinliang oth Enthalten in Elsevier Cheng, Cheng ELSEVIER Tracking variation of fluorescent dissolved organic matter during full-scale printing and dyeing wastewater treatment 2020 international journal for light and electron optics : official journal of the German Society of Applied Optics and the German Society of Electron Microscopy München (DE-627)ELV004102533 volume:180 year:2019 pages:104-112 extent:9 https://doi.org/10.1016/j.ijleo.2018.11.082 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA SSG-OPC-GGO 43.00 Umweltforschung Umweltschutz: Allgemeines VZ AR 180 2019 104-112 9 |
| allfieldsGer |
10.1016/j.ijleo.2018.11.082 doi GBV00000000000548.pica (DE-627)ELV046066039 (ELSEVIER)S0030-4026(18)31838-2 DE-627 ger DE-627 rakwb eng 333.7 VZ 43.00 bkl Li, Xinli verfasserin aut Effect of deposition rate on the growth mechanism of microcrystalline silicon thin films using very high frequency PECVD 2019transfer abstract 9 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The intrinsic microcrystalline silicon thin films were deposited by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD). Two series of films with different deposition rate 0.30 nm/s and 1.94 nm/s were prepared. The film surface and gas phase reaction growth processes were monitored with real-time spectroscopic ellipsometry and optical emission spectroscopy. The effect of deposition rate on the microcrystalline silicon thin film growth mechanism has been studied. The microcrystalline silicon surface growth was analyzed with KPZ model. The results show that the growth exponent of β is 0.448 for the films with low deposition rate, and the growth exponent of β is 0.302 for the films with high deposition rate. The growth exponent does not increase with deposition rate, but declines. And the reasons for this phenomenon were explained. The intrinsic microcrystalline silicon thin films were deposited by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD). Two series of films with different deposition rate 0.30 nm/s and 1.94 nm/s were prepared. The film surface and gas phase reaction growth processes were monitored with real-time spectroscopic ellipsometry and optical emission spectroscopy. The effect of deposition rate on the microcrystalline silicon thin film growth mechanism has been studied. The microcrystalline silicon surface growth was analyzed with KPZ model. The results show that the growth exponent of β is 0.448 for the films with low deposition rate, and the growth exponent of β is 0.302 for the films with high deposition rate. The growth exponent does not increase with deposition rate, but declines. And the reasons for this phenomenon were explained. Optical emission spectrum Elsevier Microcrystalline silicon Elsevier Real time spectroscopic ellipsometry Elsevier Growth mechanism Elsevier High rate deposition Elsevier Jin, Ruimin oth Li, Lihua oth Lu, Jingxiao oth Gu, Yongjun oth Ren, Fengzhang oth Huang, Jinliang oth Enthalten in Elsevier Cheng, Cheng ELSEVIER Tracking variation of fluorescent dissolved organic matter during full-scale printing and dyeing wastewater treatment 2020 international journal for light and electron optics : official journal of the German Society of Applied Optics and the German Society of Electron Microscopy München (DE-627)ELV004102533 volume:180 year:2019 pages:104-112 extent:9 https://doi.org/10.1016/j.ijleo.2018.11.082 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA SSG-OPC-GGO 43.00 Umweltforschung Umweltschutz: Allgemeines VZ AR 180 2019 104-112 9 |
| allfieldsSound |
10.1016/j.ijleo.2018.11.082 doi GBV00000000000548.pica (DE-627)ELV046066039 (ELSEVIER)S0030-4026(18)31838-2 DE-627 ger DE-627 rakwb eng 333.7 VZ 43.00 bkl Li, Xinli verfasserin aut Effect of deposition rate on the growth mechanism of microcrystalline silicon thin films using very high frequency PECVD 2019transfer abstract 9 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The intrinsic microcrystalline silicon thin films were deposited by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD). Two series of films with different deposition rate 0.30 nm/s and 1.94 nm/s were prepared. The film surface and gas phase reaction growth processes were monitored with real-time spectroscopic ellipsometry and optical emission spectroscopy. The effect of deposition rate on the microcrystalline silicon thin film growth mechanism has been studied. The microcrystalline silicon surface growth was analyzed with KPZ model. The results show that the growth exponent of β is 0.448 for the films with low deposition rate, and the growth exponent of β is 0.302 for the films with high deposition rate. The growth exponent does not increase with deposition rate, but declines. And the reasons for this phenomenon were explained. The intrinsic microcrystalline silicon thin films were deposited by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD). Two series of films with different deposition rate 0.30 nm/s and 1.94 nm/s were prepared. The film surface and gas phase reaction growth processes were monitored with real-time spectroscopic ellipsometry and optical emission spectroscopy. The effect of deposition rate on the microcrystalline silicon thin film growth mechanism has been studied. The microcrystalline silicon surface growth was analyzed with KPZ model. The results show that the growth exponent of β is 0.448 for the films with low deposition rate, and the growth exponent of β is 0.302 for the films with high deposition rate. The growth exponent does not increase with deposition rate, but declines. And the reasons for this phenomenon were explained. Optical emission spectrum Elsevier Microcrystalline silicon Elsevier Real time spectroscopic ellipsometry Elsevier Growth mechanism Elsevier High rate deposition Elsevier Jin, Ruimin oth Li, Lihua oth Lu, Jingxiao oth Gu, Yongjun oth Ren, Fengzhang oth Huang, Jinliang oth Enthalten in Elsevier Cheng, Cheng ELSEVIER Tracking variation of fluorescent dissolved organic matter during full-scale printing and dyeing wastewater treatment 2020 international journal for light and electron optics : official journal of the German Society of Applied Optics and the German Society of Electron Microscopy München (DE-627)ELV004102533 volume:180 year:2019 pages:104-112 extent:9 https://doi.org/10.1016/j.ijleo.2018.11.082 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA SSG-OPC-GGO 43.00 Umweltforschung Umweltschutz: Allgemeines VZ AR 180 2019 104-112 9 |
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Tracking variation of fluorescent dissolved organic matter during full-scale printing and dyeing wastewater treatment |
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Li, Xinli @@aut@@ Jin, Ruimin @@oth@@ Li, Lihua @@oth@@ Lu, Jingxiao @@oth@@ Gu, Yongjun @@oth@@ Ren, Fengzhang @@oth@@ Huang, Jinliang @@oth@@ |
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Two series of films with different deposition rate 0.30 nm/s and 1.94 nm/s were prepared. The film surface and gas phase reaction growth processes were monitored with real-time spectroscopic ellipsometry and optical emission spectroscopy. The effect of deposition rate on the microcrystalline silicon thin film growth mechanism has been studied. The microcrystalline silicon surface growth was analyzed with KPZ model. The results show that the growth exponent of β is 0.448 for the films with low deposition rate, and the growth exponent of β is 0.302 for the films with high deposition rate. The growth exponent does not increase with deposition rate, but declines. And the reasons for this phenomenon were explained.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">The intrinsic microcrystalline silicon thin films were deposited by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD). 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effect of deposition rate on the growth mechanism of microcrystalline silicon thin films using very high frequency pecvd |
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Effect of deposition rate on the growth mechanism of microcrystalline silicon thin films using very high frequency PECVD |
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The intrinsic microcrystalline silicon thin films were deposited by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD). Two series of films with different deposition rate 0.30 nm/s and 1.94 nm/s were prepared. The film surface and gas phase reaction growth processes were monitored with real-time spectroscopic ellipsometry and optical emission spectroscopy. The effect of deposition rate on the microcrystalline silicon thin film growth mechanism has been studied. The microcrystalline silicon surface growth was analyzed with KPZ model. The results show that the growth exponent of β is 0.448 for the films with low deposition rate, and the growth exponent of β is 0.302 for the films with high deposition rate. The growth exponent does not increase with deposition rate, but declines. And the reasons for this phenomenon were explained. |
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The intrinsic microcrystalline silicon thin films were deposited by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD). Two series of films with different deposition rate 0.30 nm/s and 1.94 nm/s were prepared. The film surface and gas phase reaction growth processes were monitored with real-time spectroscopic ellipsometry and optical emission spectroscopy. The effect of deposition rate on the microcrystalline silicon thin film growth mechanism has been studied. The microcrystalline silicon surface growth was analyzed with KPZ model. The results show that the growth exponent of β is 0.448 for the films with low deposition rate, and the growth exponent of β is 0.302 for the films with high deposition rate. The growth exponent does not increase with deposition rate, but declines. And the reasons for this phenomenon were explained. |
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The intrinsic microcrystalline silicon thin films were deposited by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD). Two series of films with different deposition rate 0.30 nm/s and 1.94 nm/s were prepared. The film surface and gas phase reaction growth processes were monitored with real-time spectroscopic ellipsometry and optical emission spectroscopy. The effect of deposition rate on the microcrystalline silicon thin film growth mechanism has been studied. The microcrystalline silicon surface growth was analyzed with KPZ model. The results show that the growth exponent of β is 0.448 for the films with low deposition rate, and the growth exponent of β is 0.302 for the films with high deposition rate. The growth exponent does not increase with deposition rate, but declines. And the reasons for this phenomenon were explained. |
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