Simulation study of a pixelated silicon sensor on high resistivity integrated with field effect transistor
A position-sensitive pixel array silicon detector with a junction field effect transistor (JFET) switch structure is studied as a device for the direct illumination of X-ray from synchrotron light source. Considering an absorption length of silicon at an X-ray energy and a required thickness of a si...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Lee, H.Y. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2019transfer abstract |
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| Umfang: |
5 |
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| Übergeordnetes Werk: |
Enthalten in: The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol - Ide, C.V. ELSEVIER, 2017, a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics, Amsterdam |
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| Übergeordnetes Werk: |
volume:924 ; year:2019 ; day:21 ; month:04 ; pages:14-18 ; extent:5 |
| Links: |
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| DOI / URN: |
10.1016/j.nima.2018.10.055 |
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| Katalog-ID: |
ELV046163808 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | ELV046163808 | ||
| 003 | DE-627 | ||
| 005 | 20230626013154.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 191021s2019 xx |||||o 00| ||eng c | ||
| 024 | 7 | |a 10.1016/j.nima.2018.10.055 |2 doi | |
| 028 | 5 | 2 | |a GBV00000000000557.pica |
| 035 | |a (DE-627)ELV046163808 | ||
| 035 | |a (ELSEVIER)S0168-9002(18)31370-6 | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 082 | 0 | 4 | |a 610 |q VZ |
| 084 | |a 44.90 |2 bkl | ||
| 100 | 1 | |a Lee, H.Y. |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Simulation study of a pixelated silicon sensor on high resistivity integrated with field effect transistor |
| 264 | 1 | |c 2019transfer abstract | |
| 300 | |a 5 | ||
| 336 | |a nicht spezifiziert |b zzz |2 rdacontent | ||
| 337 | |a nicht spezifiziert |b z |2 rdamedia | ||
| 338 | |a nicht spezifiziert |b zu |2 rdacarrier | ||
| 520 | |a A position-sensitive pixel array silicon detector with a junction field effect transistor (JFET) switch structure is studied as a device for the direct illumination of X-ray from synchrotron light source. Considering an absorption length of silicon at an X-ray energy and a required thickness of a silicon, a 525 μ m n-type silicon wafer with high resistivity is chosen as the active volume of the detector and is depleted by applying a negative bias voltage to the junction side. The electron–hole pairs produced in an active volume by an X-ray illumination are collected on the electrodes. All pixels with one row are read in parallel and the next row is selected by the control voltage after one row has finished being read. The field shaper is introduced to produce inter-pixel isolation. We perform the simulation of the pixelated silicon position detector with JFET switch and present the characteristics of the transistor such as the drain current as a function of the voltage between the source and drain for different gate voltages. The fabrication processes of the pixel sensor with JFET switch structure based on the simulation result are also described. | ||
| 520 | |a A position-sensitive pixel array silicon detector with a junction field effect transistor (JFET) switch structure is studied as a device for the direct illumination of X-ray from synchrotron light source. Considering an absorption length of silicon at an X-ray energy and a required thickness of a silicon, a 525 μ m n-type silicon wafer with high resistivity is chosen as the active volume of the detector and is depleted by applying a negative bias voltage to the junction side. The electron–hole pairs produced in an active volume by an X-ray illumination are collected on the electrodes. All pixels with one row are read in parallel and the next row is selected by the control voltage after one row has finished being read. The field shaper is introduced to produce inter-pixel isolation. We perform the simulation of the pixelated silicon position detector with JFET switch and present the characteristics of the transistor such as the drain current as a function of the voltage between the source and drain for different gate voltages. The fabrication processes of the pixel sensor with JFET switch structure based on the simulation result are also described. | ||
| 650 | 7 | |a 99-00 |2 Elsevier | |
| 650 | 7 | |a 00-01 |2 Elsevier | |
| 700 | 1 | |a Hyun, H.J. |4 oth | |
| 700 | 1 | |a Jeon, H.B. |4 oth | |
| 700 | 1 | |a Jeon, Jin-A |4 oth | |
| 700 | 1 | |a Lee, H.S. |4 oth | |
| 700 | 1 | |a Lee, M.H. |4 oth | |
| 700 | 1 | |a Lee, M.W. |4 oth | |
| 700 | 1 | |a Park, H. |4 oth | |
| 700 | 1 | |a Song, S.J. |4 oth | |
| 773 | 0 | 8 | |i Enthalten in |n North-Holland Publ. Co |a Ide, C.V. ELSEVIER |t The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol |d 2017 |d a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics |g Amsterdam |w (DE-627)ELV000874671 |
| 773 | 1 | 8 | |g volume:924 |g year:2019 |g day:21 |g month:04 |g pages:14-18 |g extent:5 |
| 856 | 4 | 0 | |u https://doi.org/10.1016/j.nima.2018.10.055 |3 Volltext |
| 912 | |a GBV_USEFLAG_U | ||
| 912 | |a GBV_ELV | ||
| 912 | |a SYSFLAG_U | ||
| 912 | |a SSG-OLC-PHA | ||
| 936 | b | k | |a 44.90 |j Neurologie |q VZ |
| 951 | |a AR | ||
| 952 | |d 924 |j 2019 |b 21 |c 0421 |h 14-18 |g 5 | ||
| author_variant |
h l hl |
|---|---|
| matchkey_str |
leehyhyunhjjeonhbjeonjinaleehsleemhleemw:2019----:iuaintdoaieaeslcnesrniheitvtitgaew |
| hierarchy_sort_str |
2019transfer abstract |
| bklnumber |
44.90 |
| publishDate |
2019 |
| allfields |
10.1016/j.nima.2018.10.055 doi GBV00000000000557.pica (DE-627)ELV046163808 (ELSEVIER)S0168-9002(18)31370-6 DE-627 ger DE-627 rakwb eng 610 VZ 44.90 bkl Lee, H.Y. verfasserin aut Simulation study of a pixelated silicon sensor on high resistivity integrated with field effect transistor 2019transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier A position-sensitive pixel array silicon detector with a junction field effect transistor (JFET) switch structure is studied as a device for the direct illumination of X-ray from synchrotron light source. Considering an absorption length of silicon at an X-ray energy and a required thickness of a silicon, a 525 μ m n-type silicon wafer with high resistivity is chosen as the active volume of the detector and is depleted by applying a negative bias voltage to the junction side. The electron–hole pairs produced in an active volume by an X-ray illumination are collected on the electrodes. All pixels with one row are read in parallel and the next row is selected by the control voltage after one row has finished being read. The field shaper is introduced to produce inter-pixel isolation. We perform the simulation of the pixelated silicon position detector with JFET switch and present the characteristics of the transistor such as the drain current as a function of the voltage between the source and drain for different gate voltages. The fabrication processes of the pixel sensor with JFET switch structure based on the simulation result are also described. A position-sensitive pixel array silicon detector with a junction field effect transistor (JFET) switch structure is studied as a device for the direct illumination of X-ray from synchrotron light source. Considering an absorption length of silicon at an X-ray energy and a required thickness of a silicon, a 525 μ m n-type silicon wafer with high resistivity is chosen as the active volume of the detector and is depleted by applying a negative bias voltage to the junction side. The electron–hole pairs produced in an active volume by an X-ray illumination are collected on the electrodes. All pixels with one row are read in parallel and the next row is selected by the control voltage after one row has finished being read. The field shaper is introduced to produce inter-pixel isolation. We perform the simulation of the pixelated silicon position detector with JFET switch and present the characteristics of the transistor such as the drain current as a function of the voltage between the source and drain for different gate voltages. The fabrication processes of the pixel sensor with JFET switch structure based on the simulation result are also described. 99-00 Elsevier 00-01 Elsevier Hyun, H.J. oth Jeon, H.B. oth Jeon, Jin-A oth Lee, H.S. oth Lee, M.H. oth Lee, M.W. oth Park, H. oth Song, S.J. oth Enthalten in North-Holland Publ. Co Ide, C.V. ELSEVIER The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol 2017 a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics Amsterdam (DE-627)ELV000874671 volume:924 year:2019 day:21 month:04 pages:14-18 extent:5 https://doi.org/10.1016/j.nima.2018.10.055 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 44.90 Neurologie VZ AR 924 2019 21 0421 14-18 5 |
| spelling |
10.1016/j.nima.2018.10.055 doi GBV00000000000557.pica (DE-627)ELV046163808 (ELSEVIER)S0168-9002(18)31370-6 DE-627 ger DE-627 rakwb eng 610 VZ 44.90 bkl Lee, H.Y. verfasserin aut Simulation study of a pixelated silicon sensor on high resistivity integrated with field effect transistor 2019transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier A position-sensitive pixel array silicon detector with a junction field effect transistor (JFET) switch structure is studied as a device for the direct illumination of X-ray from synchrotron light source. Considering an absorption length of silicon at an X-ray energy and a required thickness of a silicon, a 525 μ m n-type silicon wafer with high resistivity is chosen as the active volume of the detector and is depleted by applying a negative bias voltage to the junction side. The electron–hole pairs produced in an active volume by an X-ray illumination are collected on the electrodes. All pixels with one row are read in parallel and the next row is selected by the control voltage after one row has finished being read. The field shaper is introduced to produce inter-pixel isolation. We perform the simulation of the pixelated silicon position detector with JFET switch and present the characteristics of the transistor such as the drain current as a function of the voltage between the source and drain for different gate voltages. The fabrication processes of the pixel sensor with JFET switch structure based on the simulation result are also described. A position-sensitive pixel array silicon detector with a junction field effect transistor (JFET) switch structure is studied as a device for the direct illumination of X-ray from synchrotron light source. Considering an absorption length of silicon at an X-ray energy and a required thickness of a silicon, a 525 μ m n-type silicon wafer with high resistivity is chosen as the active volume of the detector and is depleted by applying a negative bias voltage to the junction side. The electron–hole pairs produced in an active volume by an X-ray illumination are collected on the electrodes. All pixels with one row are read in parallel and the next row is selected by the control voltage after one row has finished being read. The field shaper is introduced to produce inter-pixel isolation. We perform the simulation of the pixelated silicon position detector with JFET switch and present the characteristics of the transistor such as the drain current as a function of the voltage between the source and drain for different gate voltages. The fabrication processes of the pixel sensor with JFET switch structure based on the simulation result are also described. 99-00 Elsevier 00-01 Elsevier Hyun, H.J. oth Jeon, H.B. oth Jeon, Jin-A oth Lee, H.S. oth Lee, M.H. oth Lee, M.W. oth Park, H. oth Song, S.J. oth Enthalten in North-Holland Publ. Co Ide, C.V. ELSEVIER The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol 2017 a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics Amsterdam (DE-627)ELV000874671 volume:924 year:2019 day:21 month:04 pages:14-18 extent:5 https://doi.org/10.1016/j.nima.2018.10.055 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 44.90 Neurologie VZ AR 924 2019 21 0421 14-18 5 |
| allfields_unstemmed |
10.1016/j.nima.2018.10.055 doi GBV00000000000557.pica (DE-627)ELV046163808 (ELSEVIER)S0168-9002(18)31370-6 DE-627 ger DE-627 rakwb eng 610 VZ 44.90 bkl Lee, H.Y. verfasserin aut Simulation study of a pixelated silicon sensor on high resistivity integrated with field effect transistor 2019transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier A position-sensitive pixel array silicon detector with a junction field effect transistor (JFET) switch structure is studied as a device for the direct illumination of X-ray from synchrotron light source. Considering an absorption length of silicon at an X-ray energy and a required thickness of a silicon, a 525 μ m n-type silicon wafer with high resistivity is chosen as the active volume of the detector and is depleted by applying a negative bias voltage to the junction side. The electron–hole pairs produced in an active volume by an X-ray illumination are collected on the electrodes. All pixels with one row are read in parallel and the next row is selected by the control voltage after one row has finished being read. The field shaper is introduced to produce inter-pixel isolation. We perform the simulation of the pixelated silicon position detector with JFET switch and present the characteristics of the transistor such as the drain current as a function of the voltage between the source and drain for different gate voltages. The fabrication processes of the pixel sensor with JFET switch structure based on the simulation result are also described. A position-sensitive pixel array silicon detector with a junction field effect transistor (JFET) switch structure is studied as a device for the direct illumination of X-ray from synchrotron light source. Considering an absorption length of silicon at an X-ray energy and a required thickness of a silicon, a 525 μ m n-type silicon wafer with high resistivity is chosen as the active volume of the detector and is depleted by applying a negative bias voltage to the junction side. The electron–hole pairs produced in an active volume by an X-ray illumination are collected on the electrodes. All pixels with one row are read in parallel and the next row is selected by the control voltage after one row has finished being read. The field shaper is introduced to produce inter-pixel isolation. We perform the simulation of the pixelated silicon position detector with JFET switch and present the characteristics of the transistor such as the drain current as a function of the voltage between the source and drain for different gate voltages. The fabrication processes of the pixel sensor with JFET switch structure based on the simulation result are also described. 99-00 Elsevier 00-01 Elsevier Hyun, H.J. oth Jeon, H.B. oth Jeon, Jin-A oth Lee, H.S. oth Lee, M.H. oth Lee, M.W. oth Park, H. oth Song, S.J. oth Enthalten in North-Holland Publ. Co Ide, C.V. ELSEVIER The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol 2017 a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics Amsterdam (DE-627)ELV000874671 volume:924 year:2019 day:21 month:04 pages:14-18 extent:5 https://doi.org/10.1016/j.nima.2018.10.055 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 44.90 Neurologie VZ AR 924 2019 21 0421 14-18 5 |
| allfieldsGer |
10.1016/j.nima.2018.10.055 doi GBV00000000000557.pica (DE-627)ELV046163808 (ELSEVIER)S0168-9002(18)31370-6 DE-627 ger DE-627 rakwb eng 610 VZ 44.90 bkl Lee, H.Y. verfasserin aut Simulation study of a pixelated silicon sensor on high resistivity integrated with field effect transistor 2019transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier A position-sensitive pixel array silicon detector with a junction field effect transistor (JFET) switch structure is studied as a device for the direct illumination of X-ray from synchrotron light source. Considering an absorption length of silicon at an X-ray energy and a required thickness of a silicon, a 525 μ m n-type silicon wafer with high resistivity is chosen as the active volume of the detector and is depleted by applying a negative bias voltage to the junction side. The electron–hole pairs produced in an active volume by an X-ray illumination are collected on the electrodes. All pixels with one row are read in parallel and the next row is selected by the control voltage after one row has finished being read. The field shaper is introduced to produce inter-pixel isolation. We perform the simulation of the pixelated silicon position detector with JFET switch and present the characteristics of the transistor such as the drain current as a function of the voltage between the source and drain for different gate voltages. The fabrication processes of the pixel sensor with JFET switch structure based on the simulation result are also described. A position-sensitive pixel array silicon detector with a junction field effect transistor (JFET) switch structure is studied as a device for the direct illumination of X-ray from synchrotron light source. Considering an absorption length of silicon at an X-ray energy and a required thickness of a silicon, a 525 μ m n-type silicon wafer with high resistivity is chosen as the active volume of the detector and is depleted by applying a negative bias voltage to the junction side. The electron–hole pairs produced in an active volume by an X-ray illumination are collected on the electrodes. All pixels with one row are read in parallel and the next row is selected by the control voltage after one row has finished being read. The field shaper is introduced to produce inter-pixel isolation. We perform the simulation of the pixelated silicon position detector with JFET switch and present the characteristics of the transistor such as the drain current as a function of the voltage between the source and drain for different gate voltages. The fabrication processes of the pixel sensor with JFET switch structure based on the simulation result are also described. 99-00 Elsevier 00-01 Elsevier Hyun, H.J. oth Jeon, H.B. oth Jeon, Jin-A oth Lee, H.S. oth Lee, M.H. oth Lee, M.W. oth Park, H. oth Song, S.J. oth Enthalten in North-Holland Publ. Co Ide, C.V. ELSEVIER The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol 2017 a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics Amsterdam (DE-627)ELV000874671 volume:924 year:2019 day:21 month:04 pages:14-18 extent:5 https://doi.org/10.1016/j.nima.2018.10.055 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 44.90 Neurologie VZ AR 924 2019 21 0421 14-18 5 |
| allfieldsSound |
10.1016/j.nima.2018.10.055 doi GBV00000000000557.pica (DE-627)ELV046163808 (ELSEVIER)S0168-9002(18)31370-6 DE-627 ger DE-627 rakwb eng 610 VZ 44.90 bkl Lee, H.Y. verfasserin aut Simulation study of a pixelated silicon sensor on high resistivity integrated with field effect transistor 2019transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier A position-sensitive pixel array silicon detector with a junction field effect transistor (JFET) switch structure is studied as a device for the direct illumination of X-ray from synchrotron light source. Considering an absorption length of silicon at an X-ray energy and a required thickness of a silicon, a 525 μ m n-type silicon wafer with high resistivity is chosen as the active volume of the detector and is depleted by applying a negative bias voltage to the junction side. The electron–hole pairs produced in an active volume by an X-ray illumination are collected on the electrodes. All pixels with one row are read in parallel and the next row is selected by the control voltage after one row has finished being read. The field shaper is introduced to produce inter-pixel isolation. We perform the simulation of the pixelated silicon position detector with JFET switch and present the characteristics of the transistor such as the drain current as a function of the voltage between the source and drain for different gate voltages. The fabrication processes of the pixel sensor with JFET switch structure based on the simulation result are also described. A position-sensitive pixel array silicon detector with a junction field effect transistor (JFET) switch structure is studied as a device for the direct illumination of X-ray from synchrotron light source. Considering an absorption length of silicon at an X-ray energy and a required thickness of a silicon, a 525 μ m n-type silicon wafer with high resistivity is chosen as the active volume of the detector and is depleted by applying a negative bias voltage to the junction side. The electron–hole pairs produced in an active volume by an X-ray illumination are collected on the electrodes. All pixels with one row are read in parallel and the next row is selected by the control voltage after one row has finished being read. The field shaper is introduced to produce inter-pixel isolation. We perform the simulation of the pixelated silicon position detector with JFET switch and present the characteristics of the transistor such as the drain current as a function of the voltage between the source and drain for different gate voltages. The fabrication processes of the pixel sensor with JFET switch structure based on the simulation result are also described. 99-00 Elsevier 00-01 Elsevier Hyun, H.J. oth Jeon, H.B. oth Jeon, Jin-A oth Lee, H.S. oth Lee, M.H. oth Lee, M.W. oth Park, H. oth Song, S.J. oth Enthalten in North-Holland Publ. Co Ide, C.V. ELSEVIER The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol 2017 a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics Amsterdam (DE-627)ELV000874671 volume:924 year:2019 day:21 month:04 pages:14-18 extent:5 https://doi.org/10.1016/j.nima.2018.10.055 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 44.90 Neurologie VZ AR 924 2019 21 0421 14-18 5 |
| language |
English |
| source |
Enthalten in The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol Amsterdam volume:924 year:2019 day:21 month:04 pages:14-18 extent:5 |
| sourceStr |
Enthalten in The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol Amsterdam volume:924 year:2019 day:21 month:04 pages:14-18 extent:5 |
| format_phy_str_mv |
Article |
| bklname |
Neurologie |
| institution |
findex.gbv.de |
| topic_facet |
99-00 00-01 |
| dewey-raw |
610 |
| isfreeaccess_bool |
false |
| container_title |
The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol |
| authorswithroles_txt_mv |
Lee, H.Y. @@aut@@ Hyun, H.J. @@oth@@ Jeon, H.B. @@oth@@ Jeon, Jin-A @@oth@@ Lee, H.S. @@oth@@ Lee, M.H. @@oth@@ Lee, M.W. @@oth@@ Park, H. @@oth@@ Song, S.J. @@oth@@ |
| publishDateDaySort_date |
2019-01-21T00:00:00Z |
| hierarchy_top_id |
ELV000874671 |
| dewey-sort |
3610 |
| id |
ELV046163808 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV046163808</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230626013154.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">191021s2019 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.nima.2018.10.055</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">GBV00000000000557.pica</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV046163808</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S0168-9002(18)31370-6</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">610</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">44.90</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Lee, H.Y.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Simulation study of a pixelated silicon sensor on high resistivity integrated with field effect transistor</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2019transfer abstract</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">5</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">A position-sensitive pixel array silicon detector with a junction field effect transistor (JFET) switch structure is studied as a device for the direct illumination of X-ray from synchrotron light source. Considering an absorption length of silicon at an X-ray energy and a required thickness of a silicon, a 525 μ m n-type silicon wafer with high resistivity is chosen as the active volume of the detector and is depleted by applying a negative bias voltage to the junction side. The electron–hole pairs produced in an active volume by an X-ray illumination are collected on the electrodes. All pixels with one row are read in parallel and the next row is selected by the control voltage after one row has finished being read. The field shaper is introduced to produce inter-pixel isolation. We perform the simulation of the pixelated silicon position detector with JFET switch and present the characteristics of the transistor such as the drain current as a function of the voltage between the source and drain for different gate voltages. The fabrication processes of the pixel sensor with JFET switch structure based on the simulation result are also described.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">A position-sensitive pixel array silicon detector with a junction field effect transistor (JFET) switch structure is studied as a device for the direct illumination of X-ray from synchrotron light source. Considering an absorption length of silicon at an X-ray energy and a required thickness of a silicon, a 525 μ m n-type silicon wafer with high resistivity is chosen as the active volume of the detector and is depleted by applying a negative bias voltage to the junction side. The electron–hole pairs produced in an active volume by an X-ray illumination are collected on the electrodes. All pixels with one row are read in parallel and the next row is selected by the control voltage after one row has finished being read. The field shaper is introduced to produce inter-pixel isolation. We perform the simulation of the pixelated silicon position detector with JFET switch and present the characteristics of the transistor such as the drain current as a function of the voltage between the source and drain for different gate voltages. The fabrication processes of the pixel sensor with JFET switch structure based on the simulation result are also described.</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">99-00</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">00-01</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Hyun, H.J.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Jeon, H.B.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Jeon, Jin-A</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Lee, H.S.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Lee, M.H.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Lee, M.W.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Park, H.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Song, S.J.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="n">North-Holland Publ. Co</subfield><subfield code="a">Ide, C.V. ELSEVIER</subfield><subfield code="t">The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol</subfield><subfield code="d">2017</subfield><subfield code="d">a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics</subfield><subfield code="g">Amsterdam</subfield><subfield code="w">(DE-627)ELV000874671</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:924</subfield><subfield code="g">year:2019</subfield><subfield code="g">day:21</subfield><subfield code="g">month:04</subfield><subfield code="g">pages:14-18</subfield><subfield code="g">extent:5</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1016/j.nima.2018.10.055</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHA</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">44.90</subfield><subfield code="j">Neurologie</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">924</subfield><subfield code="j">2019</subfield><subfield code="b">21</subfield><subfield code="c">0421</subfield><subfield code="h">14-18</subfield><subfield code="g">5</subfield></datafield></record></collection>
|
| author |
Lee, H.Y. |
| spellingShingle |
Lee, H.Y. ddc 610 bkl 44.90 Elsevier 99-00 Elsevier 00-01 Simulation study of a pixelated silicon sensor on high resistivity integrated with field effect transistor |
| authorStr |
Lee, H.Y. |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)ELV000874671 |
| format |
electronic Article |
| dewey-ones |
610 - Medicine & health |
| delete_txt_mv |
keep |
| author_role |
aut |
| collection |
elsevier |
| remote_str |
true |
| illustrated |
Not Illustrated |
| topic_title |
610 VZ 44.90 bkl Simulation study of a pixelated silicon sensor on high resistivity integrated with field effect transistor 99-00 Elsevier 00-01 Elsevier |
| topic |
ddc 610 bkl 44.90 Elsevier 99-00 Elsevier 00-01 |
| topic_unstemmed |
ddc 610 bkl 44.90 Elsevier 99-00 Elsevier 00-01 |
| topic_browse |
ddc 610 bkl 44.90 Elsevier 99-00 Elsevier 00-01 |
| format_facet |
Elektronische Aufsätze Aufsätze Elektronische Ressource |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
zu |
| author2_variant |
h h hh h j hj j a j jaj h l hl m l ml m l ml h p hp s s ss |
| hierarchy_parent_title |
The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol |
| hierarchy_parent_id |
ELV000874671 |
| dewey-tens |
610 - Medicine & health |
| hierarchy_top_title |
The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)ELV000874671 |
| title |
Simulation study of a pixelated silicon sensor on high resistivity integrated with field effect transistor |
| ctrlnum |
(DE-627)ELV046163808 (ELSEVIER)S0168-9002(18)31370-6 |
| title_full |
Simulation study of a pixelated silicon sensor on high resistivity integrated with field effect transistor |
| author_sort |
Lee, H.Y. |
| journal |
The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol |
| journalStr |
The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
600 - Technology |
| recordtype |
marc |
| publishDateSort |
2019 |
| contenttype_str_mv |
zzz |
| container_start_page |
14 |
| author_browse |
Lee, H.Y. |
| container_volume |
924 |
| physical |
5 |
| class |
610 VZ 44.90 bkl |
| format_se |
Elektronische Aufsätze |
| author-letter |
Lee, H.Y. |
| doi_str_mv |
10.1016/j.nima.2018.10.055 |
| dewey-full |
610 |
| title_sort |
simulation study of a pixelated silicon sensor on high resistivity integrated with field effect transistor |
| title_auth |
Simulation study of a pixelated silicon sensor on high resistivity integrated with field effect transistor |
| abstract |
A position-sensitive pixel array silicon detector with a junction field effect transistor (JFET) switch structure is studied as a device for the direct illumination of X-ray from synchrotron light source. Considering an absorption length of silicon at an X-ray energy and a required thickness of a silicon, a 525 μ m n-type silicon wafer with high resistivity is chosen as the active volume of the detector and is depleted by applying a negative bias voltage to the junction side. The electron–hole pairs produced in an active volume by an X-ray illumination are collected on the electrodes. All pixels with one row are read in parallel and the next row is selected by the control voltage after one row has finished being read. The field shaper is introduced to produce inter-pixel isolation. We perform the simulation of the pixelated silicon position detector with JFET switch and present the characteristics of the transistor such as the drain current as a function of the voltage between the source and drain for different gate voltages. The fabrication processes of the pixel sensor with JFET switch structure based on the simulation result are also described. |
| abstractGer |
A position-sensitive pixel array silicon detector with a junction field effect transistor (JFET) switch structure is studied as a device for the direct illumination of X-ray from synchrotron light source. Considering an absorption length of silicon at an X-ray energy and a required thickness of a silicon, a 525 μ m n-type silicon wafer with high resistivity is chosen as the active volume of the detector and is depleted by applying a negative bias voltage to the junction side. The electron–hole pairs produced in an active volume by an X-ray illumination are collected on the electrodes. All pixels with one row are read in parallel and the next row is selected by the control voltage after one row has finished being read. The field shaper is introduced to produce inter-pixel isolation. We perform the simulation of the pixelated silicon position detector with JFET switch and present the characteristics of the transistor such as the drain current as a function of the voltage between the source and drain for different gate voltages. The fabrication processes of the pixel sensor with JFET switch structure based on the simulation result are also described. |
| abstract_unstemmed |
A position-sensitive pixel array silicon detector with a junction field effect transistor (JFET) switch structure is studied as a device for the direct illumination of X-ray from synchrotron light source. Considering an absorption length of silicon at an X-ray energy and a required thickness of a silicon, a 525 μ m n-type silicon wafer with high resistivity is chosen as the active volume of the detector and is depleted by applying a negative bias voltage to the junction side. The electron–hole pairs produced in an active volume by an X-ray illumination are collected on the electrodes. All pixels with one row are read in parallel and the next row is selected by the control voltage after one row has finished being read. The field shaper is introduced to produce inter-pixel isolation. We perform the simulation of the pixelated silicon position detector with JFET switch and present the characteristics of the transistor such as the drain current as a function of the voltage between the source and drain for different gate voltages. The fabrication processes of the pixel sensor with JFET switch structure based on the simulation result are also described. |
| collection_details |
GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA |
| title_short |
Simulation study of a pixelated silicon sensor on high resistivity integrated with field effect transistor |
| url |
https://doi.org/10.1016/j.nima.2018.10.055 |
| remote_bool |
true |
| author2 |
Hyun, H.J. Jeon, H.B. Jeon, Jin-A Lee, H.S. Lee, M.H. Lee, M.W. Park, H. Song, S.J. |
| author2Str |
Hyun, H.J. Jeon, H.B. Jeon, Jin-A Lee, H.S. Lee, M.H. Lee, M.W. Park, H. Song, S.J. |
| ppnlink |
ELV000874671 |
| mediatype_str_mv |
z |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| author2_role |
oth oth oth oth oth oth oth oth |
| doi_str |
10.1016/j.nima.2018.10.055 |
| up_date |
2024-07-06T19:29:45.764Z |
| _version_ |
1803859196130623488 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV046163808</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230626013154.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">191021s2019 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.nima.2018.10.055</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">GBV00000000000557.pica</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV046163808</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S0168-9002(18)31370-6</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">610</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">44.90</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Lee, H.Y.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Simulation study of a pixelated silicon sensor on high resistivity integrated with field effect transistor</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2019transfer abstract</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">5</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">A position-sensitive pixel array silicon detector with a junction field effect transistor (JFET) switch structure is studied as a device for the direct illumination of X-ray from synchrotron light source. Considering an absorption length of silicon at an X-ray energy and a required thickness of a silicon, a 525 μ m n-type silicon wafer with high resistivity is chosen as the active volume of the detector and is depleted by applying a negative bias voltage to the junction side. The electron–hole pairs produced in an active volume by an X-ray illumination are collected on the electrodes. All pixels with one row are read in parallel and the next row is selected by the control voltage after one row has finished being read. The field shaper is introduced to produce inter-pixel isolation. We perform the simulation of the pixelated silicon position detector with JFET switch and present the characteristics of the transistor such as the drain current as a function of the voltage between the source and drain for different gate voltages. The fabrication processes of the pixel sensor with JFET switch structure based on the simulation result are also described.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">A position-sensitive pixel array silicon detector with a junction field effect transistor (JFET) switch structure is studied as a device for the direct illumination of X-ray from synchrotron light source. Considering an absorption length of silicon at an X-ray energy and a required thickness of a silicon, a 525 μ m n-type silicon wafer with high resistivity is chosen as the active volume of the detector and is depleted by applying a negative bias voltage to the junction side. The electron–hole pairs produced in an active volume by an X-ray illumination are collected on the electrodes. All pixels with one row are read in parallel and the next row is selected by the control voltage after one row has finished being read. The field shaper is introduced to produce inter-pixel isolation. We perform the simulation of the pixelated silicon position detector with JFET switch and present the characteristics of the transistor such as the drain current as a function of the voltage between the source and drain for different gate voltages. The fabrication processes of the pixel sensor with JFET switch structure based on the simulation result are also described.</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">99-00</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">00-01</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Hyun, H.J.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Jeon, H.B.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Jeon, Jin-A</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Lee, H.S.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Lee, M.H.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Lee, M.W.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Park, H.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Song, S.J.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="n">North-Holland Publ. Co</subfield><subfield code="a">Ide, C.V. ELSEVIER</subfield><subfield code="t">The efficacy of EEG-biofeedback for acute pain management, a randomized sham-controlled study of a tailored protocol</subfield><subfield code="d">2017</subfield><subfield code="d">a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics</subfield><subfield code="g">Amsterdam</subfield><subfield code="w">(DE-627)ELV000874671</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:924</subfield><subfield code="g">year:2019</subfield><subfield code="g">day:21</subfield><subfield code="g">month:04</subfield><subfield code="g">pages:14-18</subfield><subfield code="g">extent:5</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1016/j.nima.2018.10.055</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHA</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">44.90</subfield><subfield code="j">Neurologie</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">924</subfield><subfield code="j">2019</subfield><subfield code="b">21</subfield><subfield code="c">0421</subfield><subfield code="h">14-18</subfield><subfield code="g">5</subfield></datafield></record></collection>
|
| score |
7.400526 |