Real-time monitoring and control of nitride growth rates by Metal Modulated Epitaxy
• Capability to monitor growth rate of III-Nitrides, by MBE, at any point during the growth of the film or device structure. • Innovative differential analysis method which increases accuracy (reduces error) by more than 2x over previous methods. • Measurement of the Ga adlayer thickness made by RHE...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Averett, Kent L. [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
2019 |
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| Schlagwörter: |
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| Umfang: |
5 |
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| Übergeordnetes Werk: |
Enthalten in: The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting - 2011, Amsterdam [u.a.] |
|---|---|
| Übergeordnetes Werk: |
volume:517 ; year:2019 ; day:1 ; month:07 ; pages:12-16 ; extent:5 |
| Links: |
|---|
| DOI / URN: |
10.1016/j.jcrysgro.2019.04.008 |
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• Capability to monitor growth rate of III-Nitrides, by MBE, at any point during the growth of the film or device structure. • Innovative differential analysis method which increases accuracy (reduces error) by more than 2x over previous methods. • Measurement of the Ga adlayer thickness made by RHEED Intensity analysis for the first time. |
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