Some insights into the mechanism of photoluminescence of As-S-based films synthesized by PECVD
Chalcogenide arsenic sulphide thin films were obtained by reacting arsenic and sulfur vapors in a low-temperature plasma discharge. Photoluminescence (PL) of As-S films with compositions As34S66 and As53S47 is studied in detail. An increase in the arsenic concentration leads to the emergence of a cr...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Usanov, Dmitry [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2019transfer abstract |
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| Umfang: |
5 |
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| Übergeordnetes Werk: |
Enthalten in: Modeling and simulation of large-scale systems: A systematic comparison of modeling paradigms - Schweiger, G. ELSEVIER, 2019, a journal on the chemical, electronic, optical and mechanical properties of glasses, amorphous semiconductors and metals, sol-gel materials, the liquid state of these solids and the processes by which they are formed, Amsterdam [u.a.] |
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| Übergeordnetes Werk: |
volume:513 ; year:2019 ; day:1 ; month:06 ; pages:120-124 ; extent:5 |
| Links: |
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| DOI / URN: |
10.1016/j.jnoncrysol.2019.03.015 |
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| 520 | |a Chalcogenide arsenic sulphide thin films were obtained by reacting arsenic and sulfur vapors in a low-temperature plasma discharge. Photoluminescence (PL) of As-S films with compositions As34S66 and As53S47 is studied in detail. An increase in the arsenic concentration leads to the emergence of a crystalline phase in the As53S47 films. In addition, these films exhibit an intense broad PL band with a maximum at 2.2 eV upon a continuous 473 nm laser excitation. The interplay between composition, structure and optical properties is revealed. By coupling of PL, Raman spectroscopy and absorption data, possible mechanisms of radiative recombination in the context of the glass structure formation in the plasma discharge are discussed. | ||
| 520 | |a Chalcogenide arsenic sulphide thin films were obtained by reacting arsenic and sulfur vapors in a low-temperature plasma discharge. Photoluminescence (PL) of As-S films with compositions As34S66 and As53S47 is studied in detail. An increase in the arsenic concentration leads to the emergence of a crystalline phase in the As53S47 films. In addition, these films exhibit an intense broad PL band with a maximum at 2.2 eV upon a continuous 473 nm laser excitation. The interplay between composition, structure and optical properties is revealed. By coupling of PL, Raman spectroscopy and absorption data, possible mechanisms of radiative recombination in the context of the glass structure formation in the plasma discharge are discussed. | ||
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10.1016/j.jnoncrysol.2019.03.015 doi GBV00000000000615.pica (DE-627)ELV046701400 (ELSEVIER)S0022-3093(19)30169-3 DE-627 ger DE-627 rakwb eng 510 VZ 31.80 bkl 31.76 bkl Usanov, Dmitry verfasserin aut Some insights into the mechanism of photoluminescence of As-S-based films synthesized by PECVD 2019transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Chalcogenide arsenic sulphide thin films were obtained by reacting arsenic and sulfur vapors in a low-temperature plasma discharge. Photoluminescence (PL) of As-S films with compositions As34S66 and As53S47 is studied in detail. An increase in the arsenic concentration leads to the emergence of a crystalline phase in the As53S47 films. In addition, these films exhibit an intense broad PL band with a maximum at 2.2 eV upon a continuous 473 nm laser excitation. The interplay between composition, structure and optical properties is revealed. By coupling of PL, Raman spectroscopy and absorption data, possible mechanisms of radiative recombination in the context of the glass structure formation in the plasma discharge are discussed. Chalcogenide arsenic sulphide thin films were obtained by reacting arsenic and sulfur vapors in a low-temperature plasma discharge. Photoluminescence (PL) of As-S films with compositions As34S66 and As53S47 is studied in detail. An increase in the arsenic concentration leads to the emergence of a crystalline phase in the As53S47 films. In addition, these films exhibit an intense broad PL band with a maximum at 2.2 eV upon a continuous 473 nm laser excitation. The interplay between composition, structure and optical properties is revealed. By coupling of PL, Raman spectroscopy and absorption data, possible mechanisms of radiative recombination in the context of the glass structure formation in the plasma discharge are discussed. Nezhdanov, Aleksey oth Kudryashov, Mikhail oth Krivenkov, Ivan oth Markelov, Aleksey oth Trushin, Vladimir oth Mochalov, Leonid oth Gogova, Daniela oth Mashin, Aleksandr oth Enthalten in Elsevier Science Schweiger, G. ELSEVIER Modeling and simulation of large-scale systems: A systematic comparison of modeling paradigms 2019 a journal on the chemical, electronic, optical and mechanical properties of glasses, amorphous semiconductors and metals, sol-gel materials, the liquid state of these solids and the processes by which they are formed Amsterdam [u.a.] (DE-627)ELV002959275 volume:513 year:2019 day:1 month:06 pages:120-124 extent:5 https://doi.org/10.1016/j.jnoncrysol.2019.03.015 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OPC-MAT 31.80 Angewandte Mathematik VZ 31.76 Numerische Mathematik VZ AR 513 2019 1 0601 120-124 5 |
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10.1016/j.jnoncrysol.2019.03.015 doi GBV00000000000615.pica (DE-627)ELV046701400 (ELSEVIER)S0022-3093(19)30169-3 DE-627 ger DE-627 rakwb eng 510 VZ 31.80 bkl 31.76 bkl Usanov, Dmitry verfasserin aut Some insights into the mechanism of photoluminescence of As-S-based films synthesized by PECVD 2019transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Chalcogenide arsenic sulphide thin films were obtained by reacting arsenic and sulfur vapors in a low-temperature plasma discharge. Photoluminescence (PL) of As-S films with compositions As34S66 and As53S47 is studied in detail. An increase in the arsenic concentration leads to the emergence of a crystalline phase in the As53S47 films. In addition, these films exhibit an intense broad PL band with a maximum at 2.2 eV upon a continuous 473 nm laser excitation. The interplay between composition, structure and optical properties is revealed. By coupling of PL, Raman spectroscopy and absorption data, possible mechanisms of radiative recombination in the context of the glass structure formation in the plasma discharge are discussed. Chalcogenide arsenic sulphide thin films were obtained by reacting arsenic and sulfur vapors in a low-temperature plasma discharge. Photoluminescence (PL) of As-S films with compositions As34S66 and As53S47 is studied in detail. An increase in the arsenic concentration leads to the emergence of a crystalline phase in the As53S47 films. In addition, these films exhibit an intense broad PL band with a maximum at 2.2 eV upon a continuous 473 nm laser excitation. The interplay between composition, structure and optical properties is revealed. By coupling of PL, Raman spectroscopy and absorption data, possible mechanisms of radiative recombination in the context of the glass structure formation in the plasma discharge are discussed. Nezhdanov, Aleksey oth Kudryashov, Mikhail oth Krivenkov, Ivan oth Markelov, Aleksey oth Trushin, Vladimir oth Mochalov, Leonid oth Gogova, Daniela oth Mashin, Aleksandr oth Enthalten in Elsevier Science Schweiger, G. ELSEVIER Modeling and simulation of large-scale systems: A systematic comparison of modeling paradigms 2019 a journal on the chemical, electronic, optical and mechanical properties of glasses, amorphous semiconductors and metals, sol-gel materials, the liquid state of these solids and the processes by which they are formed Amsterdam [u.a.] (DE-627)ELV002959275 volume:513 year:2019 day:1 month:06 pages:120-124 extent:5 https://doi.org/10.1016/j.jnoncrysol.2019.03.015 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OPC-MAT 31.80 Angewandte Mathematik VZ 31.76 Numerische Mathematik VZ AR 513 2019 1 0601 120-124 5 |
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10.1016/j.jnoncrysol.2019.03.015 doi GBV00000000000615.pica (DE-627)ELV046701400 (ELSEVIER)S0022-3093(19)30169-3 DE-627 ger DE-627 rakwb eng 510 VZ 31.80 bkl 31.76 bkl Usanov, Dmitry verfasserin aut Some insights into the mechanism of photoluminescence of As-S-based films synthesized by PECVD 2019transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Chalcogenide arsenic sulphide thin films were obtained by reacting arsenic and sulfur vapors in a low-temperature plasma discharge. Photoluminescence (PL) of As-S films with compositions As34S66 and As53S47 is studied in detail. An increase in the arsenic concentration leads to the emergence of a crystalline phase in the As53S47 films. In addition, these films exhibit an intense broad PL band with a maximum at 2.2 eV upon a continuous 473 nm laser excitation. The interplay between composition, structure and optical properties is revealed. By coupling of PL, Raman spectroscopy and absorption data, possible mechanisms of radiative recombination in the context of the glass structure formation in the plasma discharge are discussed. Chalcogenide arsenic sulphide thin films were obtained by reacting arsenic and sulfur vapors in a low-temperature plasma discharge. Photoluminescence (PL) of As-S films with compositions As34S66 and As53S47 is studied in detail. An increase in the arsenic concentration leads to the emergence of a crystalline phase in the As53S47 films. In addition, these films exhibit an intense broad PL band with a maximum at 2.2 eV upon a continuous 473 nm laser excitation. The interplay between composition, structure and optical properties is revealed. By coupling of PL, Raman spectroscopy and absorption data, possible mechanisms of radiative recombination in the context of the glass structure formation in the plasma discharge are discussed. Nezhdanov, Aleksey oth Kudryashov, Mikhail oth Krivenkov, Ivan oth Markelov, Aleksey oth Trushin, Vladimir oth Mochalov, Leonid oth Gogova, Daniela oth Mashin, Aleksandr oth Enthalten in Elsevier Science Schweiger, G. ELSEVIER Modeling and simulation of large-scale systems: A systematic comparison of modeling paradigms 2019 a journal on the chemical, electronic, optical and mechanical properties of glasses, amorphous semiconductors and metals, sol-gel materials, the liquid state of these solids and the processes by which they are formed Amsterdam [u.a.] (DE-627)ELV002959275 volume:513 year:2019 day:1 month:06 pages:120-124 extent:5 https://doi.org/10.1016/j.jnoncrysol.2019.03.015 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OPC-MAT 31.80 Angewandte Mathematik VZ 31.76 Numerische Mathematik VZ AR 513 2019 1 0601 120-124 5 |
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10.1016/j.jnoncrysol.2019.03.015 doi GBV00000000000615.pica (DE-627)ELV046701400 (ELSEVIER)S0022-3093(19)30169-3 DE-627 ger DE-627 rakwb eng 510 VZ 31.80 bkl 31.76 bkl Usanov, Dmitry verfasserin aut Some insights into the mechanism of photoluminescence of As-S-based films synthesized by PECVD 2019transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Chalcogenide arsenic sulphide thin films were obtained by reacting arsenic and sulfur vapors in a low-temperature plasma discharge. Photoluminescence (PL) of As-S films with compositions As34S66 and As53S47 is studied in detail. An increase in the arsenic concentration leads to the emergence of a crystalline phase in the As53S47 films. In addition, these films exhibit an intense broad PL band with a maximum at 2.2 eV upon a continuous 473 nm laser excitation. The interplay between composition, structure and optical properties is revealed. By coupling of PL, Raman spectroscopy and absorption data, possible mechanisms of radiative recombination in the context of the glass structure formation in the plasma discharge are discussed. Chalcogenide arsenic sulphide thin films were obtained by reacting arsenic and sulfur vapors in a low-temperature plasma discharge. Photoluminescence (PL) of As-S films with compositions As34S66 and As53S47 is studied in detail. An increase in the arsenic concentration leads to the emergence of a crystalline phase in the As53S47 films. In addition, these films exhibit an intense broad PL band with a maximum at 2.2 eV upon a continuous 473 nm laser excitation. The interplay between composition, structure and optical properties is revealed. By coupling of PL, Raman spectroscopy and absorption data, possible mechanisms of radiative recombination in the context of the glass structure formation in the plasma discharge are discussed. Nezhdanov, Aleksey oth Kudryashov, Mikhail oth Krivenkov, Ivan oth Markelov, Aleksey oth Trushin, Vladimir oth Mochalov, Leonid oth Gogova, Daniela oth Mashin, Aleksandr oth Enthalten in Elsevier Science Schweiger, G. ELSEVIER Modeling and simulation of large-scale systems: A systematic comparison of modeling paradigms 2019 a journal on the chemical, electronic, optical and mechanical properties of glasses, amorphous semiconductors and metals, sol-gel materials, the liquid state of these solids and the processes by which they are formed Amsterdam [u.a.] (DE-627)ELV002959275 volume:513 year:2019 day:1 month:06 pages:120-124 extent:5 https://doi.org/10.1016/j.jnoncrysol.2019.03.015 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OPC-MAT 31.80 Angewandte Mathematik VZ 31.76 Numerische Mathematik VZ AR 513 2019 1 0601 120-124 5 |
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10.1016/j.jnoncrysol.2019.03.015 doi GBV00000000000615.pica (DE-627)ELV046701400 (ELSEVIER)S0022-3093(19)30169-3 DE-627 ger DE-627 rakwb eng 510 VZ 31.80 bkl 31.76 bkl Usanov, Dmitry verfasserin aut Some insights into the mechanism of photoluminescence of As-S-based films synthesized by PECVD 2019transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Chalcogenide arsenic sulphide thin films were obtained by reacting arsenic and sulfur vapors in a low-temperature plasma discharge. Photoluminescence (PL) of As-S films with compositions As34S66 and As53S47 is studied in detail. An increase in the arsenic concentration leads to the emergence of a crystalline phase in the As53S47 films. In addition, these films exhibit an intense broad PL band with a maximum at 2.2 eV upon a continuous 473 nm laser excitation. The interplay between composition, structure and optical properties is revealed. By coupling of PL, Raman spectroscopy and absorption data, possible mechanisms of radiative recombination in the context of the glass structure formation in the plasma discharge are discussed. Chalcogenide arsenic sulphide thin films were obtained by reacting arsenic and sulfur vapors in a low-temperature plasma discharge. Photoluminescence (PL) of As-S films with compositions As34S66 and As53S47 is studied in detail. An increase in the arsenic concentration leads to the emergence of a crystalline phase in the As53S47 films. In addition, these films exhibit an intense broad PL band with a maximum at 2.2 eV upon a continuous 473 nm laser excitation. The interplay between composition, structure and optical properties is revealed. By coupling of PL, Raman spectroscopy and absorption data, possible mechanisms of radiative recombination in the context of the glass structure formation in the plasma discharge are discussed. Nezhdanov, Aleksey oth Kudryashov, Mikhail oth Krivenkov, Ivan oth Markelov, Aleksey oth Trushin, Vladimir oth Mochalov, Leonid oth Gogova, Daniela oth Mashin, Aleksandr oth Enthalten in Elsevier Science Schweiger, G. ELSEVIER Modeling and simulation of large-scale systems: A systematic comparison of modeling paradigms 2019 a journal on the chemical, electronic, optical and mechanical properties of glasses, amorphous semiconductors and metals, sol-gel materials, the liquid state of these solids and the processes by which they are formed Amsterdam [u.a.] (DE-627)ELV002959275 volume:513 year:2019 day:1 month:06 pages:120-124 extent:5 https://doi.org/10.1016/j.jnoncrysol.2019.03.015 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OPC-MAT 31.80 Angewandte Mathematik VZ 31.76 Numerische Mathematik VZ AR 513 2019 1 0601 120-124 5 |
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| author |
Usanov, Dmitry |
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510 VZ 31.80 bkl 31.76 bkl Some insights into the mechanism of photoluminescence of As-S-based films synthesized by PECVD |
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Modeling and simulation of large-scale systems: A systematic comparison of modeling paradigms |
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Modeling and simulation of large-scale systems: A systematic comparison of modeling paradigms |
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Some insights into the mechanism of photoluminescence of As-S-based films synthesized by PECVD |
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Some insights into the mechanism of photoluminescence of As-S-based films synthesized by PECVD |
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Usanov, Dmitry |
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Modeling and simulation of large-scale systems: A systematic comparison of modeling paradigms |
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Modeling and simulation of large-scale systems: A systematic comparison of modeling paradigms |
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Usanov, Dmitry |
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10.1016/j.jnoncrysol.2019.03.015 |
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some insights into the mechanism of photoluminescence of as-s-based films synthesized by pecvd |
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Some insights into the mechanism of photoluminescence of As-S-based films synthesized by PECVD |
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Chalcogenide arsenic sulphide thin films were obtained by reacting arsenic and sulfur vapors in a low-temperature plasma discharge. Photoluminescence (PL) of As-S films with compositions As34S66 and As53S47 is studied in detail. An increase in the arsenic concentration leads to the emergence of a crystalline phase in the As53S47 films. In addition, these films exhibit an intense broad PL band with a maximum at 2.2 eV upon a continuous 473 nm laser excitation. The interplay between composition, structure and optical properties is revealed. By coupling of PL, Raman spectroscopy and absorption data, possible mechanisms of radiative recombination in the context of the glass structure formation in the plasma discharge are discussed. |
| abstractGer |
Chalcogenide arsenic sulphide thin films were obtained by reacting arsenic and sulfur vapors in a low-temperature plasma discharge. Photoluminescence (PL) of As-S films with compositions As34S66 and As53S47 is studied in detail. An increase in the arsenic concentration leads to the emergence of a crystalline phase in the As53S47 films. In addition, these films exhibit an intense broad PL band with a maximum at 2.2 eV upon a continuous 473 nm laser excitation. The interplay between composition, structure and optical properties is revealed. By coupling of PL, Raman spectroscopy and absorption data, possible mechanisms of radiative recombination in the context of the glass structure formation in the plasma discharge are discussed. |
| abstract_unstemmed |
Chalcogenide arsenic sulphide thin films were obtained by reacting arsenic and sulfur vapors in a low-temperature plasma discharge. Photoluminescence (PL) of As-S films with compositions As34S66 and As53S47 is studied in detail. An increase in the arsenic concentration leads to the emergence of a crystalline phase in the As53S47 films. In addition, these films exhibit an intense broad PL band with a maximum at 2.2 eV upon a continuous 473 nm laser excitation. The interplay between composition, structure and optical properties is revealed. By coupling of PL, Raman spectroscopy and absorption data, possible mechanisms of radiative recombination in the context of the glass structure formation in the plasma discharge are discussed. |
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Some insights into the mechanism of photoluminescence of As-S-based films synthesized by PECVD |
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Nezhdanov, Aleksey Kudryashov, Mikhail Krivenkov, Ivan Markelov, Aleksey Trushin, Vladimir Mochalov, Leonid Gogova, Daniela Mashin, Aleksandr |
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Nezhdanov, Aleksey Kudryashov, Mikhail Krivenkov, Ivan Markelov, Aleksey Trushin, Vladimir Mochalov, Leonid Gogova, Daniela Mashin, Aleksandr |
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