Electrical percolation and infrared emissivity of pressureless sintered SiC-MoSi<ce:inf loc="post">2</ce:inf> composites tailored by sintering temperature
SiC-MoSi2 composites with low electrical resistivity and high infrared emissivity were fabricated via pressureless sintering. The relationship between microstructure evolution and electrical behaviors along with infrared emission properties of the resulting composites is investigated at various sint...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Zheng, Jia-Qi [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2019transfer abstract |
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| Schlagwörter: |
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| Umfang: |
7 |
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| Übergeordnetes Werk: |
Enthalten in: Improved differential evolution for RSSD-based localization in Gaussian mixture noise - Zhang, Yuanyuan ELSEVIER, 2023, Amsterdam [u.a.] |
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| Übergeordnetes Werk: |
volume:39 ; year:2019 ; number:14 ; pages:3981-3987 ; extent:7 |
| Links: |
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| DOI / URN: |
10.1016/j.jeurceramsoc.2019.05.019 |
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| 520 | |a SiC-MoSi2 composites with low electrical resistivity and high infrared emissivity were fabricated via pressureless sintering. The relationship between microstructure evolution and electrical behaviors along with infrared emission properties of the resulting composites is investigated at various sintering temperatures. The electrical resistivity undergoes two significant drops with increasing sintering temperature. Pore elimination bears responsible for the initial decrease in electrical resistivity. Transmission electron microscopy (TEM) observation manifests that the thinned amorphous layers at SiC/MoSi2 interface decrease grain boundary resistivity and allow for electrical percolation to occur when sintering temperature further rises. Additionally, increasing sintering temperature leads to a higher infrared emissivity owing to the formation of Mo4.8Si3C0.6 and the decreased boundaries. The lowest electrical resistivity of 7.2 Ω cm and the highest infrared emissivity of 0.721 are recorded for composite sintered at 2000 ℃. Overall, SiC-MoSi2 composites exhibit a promising prospect as infrared source elements that must endure harsh environments. | ||
| 520 | |a SiC-MoSi2 composites with low electrical resistivity and high infrared emissivity were fabricated via pressureless sintering. The relationship between microstructure evolution and electrical behaviors along with infrared emission properties of the resulting composites is investigated at various sintering temperatures. The electrical resistivity undergoes two significant drops with increasing sintering temperature. Pore elimination bears responsible for the initial decrease in electrical resistivity. Transmission electron microscopy (TEM) observation manifests that the thinned amorphous layers at SiC/MoSi2 interface decrease grain boundary resistivity and allow for electrical percolation to occur when sintering temperature further rises. Additionally, increasing sintering temperature leads to a higher infrared emissivity owing to the formation of Mo4.8Si3C0.6 and the decreased boundaries. The lowest electrical resistivity of 7.2 Ω cm and the highest infrared emissivity of 0.721 are recorded for composite sintered at 2000 ℃. Overall, SiC-MoSi2 composites exhibit a promising prospect as infrared source elements that must endure harsh environments. | ||
| 650 | 7 | |a Silicon carbide |2 Elsevier | |
| 650 | 7 | |a Molybdenum disilicide |2 Elsevier | |
| 650 | 7 | |a Sintering temperature |2 Elsevier | |
| 650 | 7 | |a Electrical percolation |2 Elsevier | |
| 650 | 7 | |a Grain boundary |2 Elsevier | |
| 700 | 1 | |a Chen, Jian |4 oth | |
| 700 | 1 | |a Zhang, Bu-Hao |4 oth | |
| 700 | 1 | |a Liu, Xue-Jian |4 oth | |
| 700 | 1 | |a Chen, Zhong-Ming |4 oth | |
| 700 | 1 | |a Wu, Hai-Bo |4 oth | |
| 700 | 1 | |a Huang, Zheng-Ren |4 oth | |
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10.1016/j.jeurceramsoc.2019.05.019 doi GBV00000000000676.pica (DE-627)ELV047273801 (ELSEVIER)S0955-2219(19)30325-5 DE-627 ger DE-627 rakwb eng 004 VZ 54.00 bkl Zheng, Jia-Qi verfasserin aut Electrical percolation and infrared emissivity of pressureless sintered SiC-MoSi<ce:inf loc="post">2</ce:inf> composites tailored by sintering temperature 2019transfer abstract 7 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier SiC-MoSi2 composites with low electrical resistivity and high infrared emissivity were fabricated via pressureless sintering. The relationship between microstructure evolution and electrical behaviors along with infrared emission properties of the resulting composites is investigated at various sintering temperatures. The electrical resistivity undergoes two significant drops with increasing sintering temperature. Pore elimination bears responsible for the initial decrease in electrical resistivity. Transmission electron microscopy (TEM) observation manifests that the thinned amorphous layers at SiC/MoSi2 interface decrease grain boundary resistivity and allow for electrical percolation to occur when sintering temperature further rises. Additionally, increasing sintering temperature leads to a higher infrared emissivity owing to the formation of Mo4.8Si3C0.6 and the decreased boundaries. The lowest electrical resistivity of 7.2 Ω cm and the highest infrared emissivity of 0.721 are recorded for composite sintered at 2000 ℃. Overall, SiC-MoSi2 composites exhibit a promising prospect as infrared source elements that must endure harsh environments. SiC-MoSi2 composites with low electrical resistivity and high infrared emissivity were fabricated via pressureless sintering. The relationship between microstructure evolution and electrical behaviors along with infrared emission properties of the resulting composites is investigated at various sintering temperatures. The electrical resistivity undergoes two significant drops with increasing sintering temperature. Pore elimination bears responsible for the initial decrease in electrical resistivity. Transmission electron microscopy (TEM) observation manifests that the thinned amorphous layers at SiC/MoSi2 interface decrease grain boundary resistivity and allow for electrical percolation to occur when sintering temperature further rises. Additionally, increasing sintering temperature leads to a higher infrared emissivity owing to the formation of Mo4.8Si3C0.6 and the decreased boundaries. The lowest electrical resistivity of 7.2 Ω cm and the highest infrared emissivity of 0.721 are recorded for composite sintered at 2000 ℃. Overall, SiC-MoSi2 composites exhibit a promising prospect as infrared source elements that must endure harsh environments. Silicon carbide Elsevier Molybdenum disilicide Elsevier Sintering temperature Elsevier Electrical percolation Elsevier Grain boundary Elsevier Chen, Jian oth Zhang, Bu-Hao oth Liu, Xue-Jian oth Chen, Zhong-Ming oth Wu, Hai-Bo oth Huang, Zheng-Ren oth Enthalten in Elsevier Science Zhang, Yuanyuan ELSEVIER Improved differential evolution for RSSD-based localization in Gaussian mixture noise 2023 Amsterdam [u.a.] (DE-627)ELV009961755 volume:39 year:2019 number:14 pages:3981-3987 extent:7 https://doi.org/10.1016/j.jeurceramsoc.2019.05.019 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 54.00 Informatik: Allgemeines VZ AR 39 2019 14 3981-3987 7 |
| spelling |
10.1016/j.jeurceramsoc.2019.05.019 doi GBV00000000000676.pica (DE-627)ELV047273801 (ELSEVIER)S0955-2219(19)30325-5 DE-627 ger DE-627 rakwb eng 004 VZ 54.00 bkl Zheng, Jia-Qi verfasserin aut Electrical percolation and infrared emissivity of pressureless sintered SiC-MoSi<ce:inf loc="post">2</ce:inf> composites tailored by sintering temperature 2019transfer abstract 7 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier SiC-MoSi2 composites with low electrical resistivity and high infrared emissivity were fabricated via pressureless sintering. The relationship between microstructure evolution and electrical behaviors along with infrared emission properties of the resulting composites is investigated at various sintering temperatures. The electrical resistivity undergoes two significant drops with increasing sintering temperature. Pore elimination bears responsible for the initial decrease in electrical resistivity. Transmission electron microscopy (TEM) observation manifests that the thinned amorphous layers at SiC/MoSi2 interface decrease grain boundary resistivity and allow for electrical percolation to occur when sintering temperature further rises. Additionally, increasing sintering temperature leads to a higher infrared emissivity owing to the formation of Mo4.8Si3C0.6 and the decreased boundaries. The lowest electrical resistivity of 7.2 Ω cm and the highest infrared emissivity of 0.721 are recorded for composite sintered at 2000 ℃. Overall, SiC-MoSi2 composites exhibit a promising prospect as infrared source elements that must endure harsh environments. SiC-MoSi2 composites with low electrical resistivity and high infrared emissivity were fabricated via pressureless sintering. The relationship between microstructure evolution and electrical behaviors along with infrared emission properties of the resulting composites is investigated at various sintering temperatures. The electrical resistivity undergoes two significant drops with increasing sintering temperature. Pore elimination bears responsible for the initial decrease in electrical resistivity. Transmission electron microscopy (TEM) observation manifests that the thinned amorphous layers at SiC/MoSi2 interface decrease grain boundary resistivity and allow for electrical percolation to occur when sintering temperature further rises. Additionally, increasing sintering temperature leads to a higher infrared emissivity owing to the formation of Mo4.8Si3C0.6 and the decreased boundaries. The lowest electrical resistivity of 7.2 Ω cm and the highest infrared emissivity of 0.721 are recorded for composite sintered at 2000 ℃. Overall, SiC-MoSi2 composites exhibit a promising prospect as infrared source elements that must endure harsh environments. Silicon carbide Elsevier Molybdenum disilicide Elsevier Sintering temperature Elsevier Electrical percolation Elsevier Grain boundary Elsevier Chen, Jian oth Zhang, Bu-Hao oth Liu, Xue-Jian oth Chen, Zhong-Ming oth Wu, Hai-Bo oth Huang, Zheng-Ren oth Enthalten in Elsevier Science Zhang, Yuanyuan ELSEVIER Improved differential evolution for RSSD-based localization in Gaussian mixture noise 2023 Amsterdam [u.a.] (DE-627)ELV009961755 volume:39 year:2019 number:14 pages:3981-3987 extent:7 https://doi.org/10.1016/j.jeurceramsoc.2019.05.019 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 54.00 Informatik: Allgemeines VZ AR 39 2019 14 3981-3987 7 |
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10.1016/j.jeurceramsoc.2019.05.019 doi GBV00000000000676.pica (DE-627)ELV047273801 (ELSEVIER)S0955-2219(19)30325-5 DE-627 ger DE-627 rakwb eng 004 VZ 54.00 bkl Zheng, Jia-Qi verfasserin aut Electrical percolation and infrared emissivity of pressureless sintered SiC-MoSi<ce:inf loc="post">2</ce:inf> composites tailored by sintering temperature 2019transfer abstract 7 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier SiC-MoSi2 composites with low electrical resistivity and high infrared emissivity were fabricated via pressureless sintering. The relationship between microstructure evolution and electrical behaviors along with infrared emission properties of the resulting composites is investigated at various sintering temperatures. The electrical resistivity undergoes two significant drops with increasing sintering temperature. Pore elimination bears responsible for the initial decrease in electrical resistivity. Transmission electron microscopy (TEM) observation manifests that the thinned amorphous layers at SiC/MoSi2 interface decrease grain boundary resistivity and allow for electrical percolation to occur when sintering temperature further rises. Additionally, increasing sintering temperature leads to a higher infrared emissivity owing to the formation of Mo4.8Si3C0.6 and the decreased boundaries. The lowest electrical resistivity of 7.2 Ω cm and the highest infrared emissivity of 0.721 are recorded for composite sintered at 2000 ℃. Overall, SiC-MoSi2 composites exhibit a promising prospect as infrared source elements that must endure harsh environments. SiC-MoSi2 composites with low electrical resistivity and high infrared emissivity were fabricated via pressureless sintering. The relationship between microstructure evolution and electrical behaviors along with infrared emission properties of the resulting composites is investigated at various sintering temperatures. The electrical resistivity undergoes two significant drops with increasing sintering temperature. Pore elimination bears responsible for the initial decrease in electrical resistivity. Transmission electron microscopy (TEM) observation manifests that the thinned amorphous layers at SiC/MoSi2 interface decrease grain boundary resistivity and allow for electrical percolation to occur when sintering temperature further rises. Additionally, increasing sintering temperature leads to a higher infrared emissivity owing to the formation of Mo4.8Si3C0.6 and the decreased boundaries. The lowest electrical resistivity of 7.2 Ω cm and the highest infrared emissivity of 0.721 are recorded for composite sintered at 2000 ℃. Overall, SiC-MoSi2 composites exhibit a promising prospect as infrared source elements that must endure harsh environments. Silicon carbide Elsevier Molybdenum disilicide Elsevier Sintering temperature Elsevier Electrical percolation Elsevier Grain boundary Elsevier Chen, Jian oth Zhang, Bu-Hao oth Liu, Xue-Jian oth Chen, Zhong-Ming oth Wu, Hai-Bo oth Huang, Zheng-Ren oth Enthalten in Elsevier Science Zhang, Yuanyuan ELSEVIER Improved differential evolution for RSSD-based localization in Gaussian mixture noise 2023 Amsterdam [u.a.] (DE-627)ELV009961755 volume:39 year:2019 number:14 pages:3981-3987 extent:7 https://doi.org/10.1016/j.jeurceramsoc.2019.05.019 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 54.00 Informatik: Allgemeines VZ AR 39 2019 14 3981-3987 7 |
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10.1016/j.jeurceramsoc.2019.05.019 doi GBV00000000000676.pica (DE-627)ELV047273801 (ELSEVIER)S0955-2219(19)30325-5 DE-627 ger DE-627 rakwb eng 004 VZ 54.00 bkl Zheng, Jia-Qi verfasserin aut Electrical percolation and infrared emissivity of pressureless sintered SiC-MoSi<ce:inf loc="post">2</ce:inf> composites tailored by sintering temperature 2019transfer abstract 7 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier SiC-MoSi2 composites with low electrical resistivity and high infrared emissivity were fabricated via pressureless sintering. The relationship between microstructure evolution and electrical behaviors along with infrared emission properties of the resulting composites is investigated at various sintering temperatures. The electrical resistivity undergoes two significant drops with increasing sintering temperature. Pore elimination bears responsible for the initial decrease in electrical resistivity. Transmission electron microscopy (TEM) observation manifests that the thinned amorphous layers at SiC/MoSi2 interface decrease grain boundary resistivity and allow for electrical percolation to occur when sintering temperature further rises. Additionally, increasing sintering temperature leads to a higher infrared emissivity owing to the formation of Mo4.8Si3C0.6 and the decreased boundaries. The lowest electrical resistivity of 7.2 Ω cm and the highest infrared emissivity of 0.721 are recorded for composite sintered at 2000 ℃. Overall, SiC-MoSi2 composites exhibit a promising prospect as infrared source elements that must endure harsh environments. SiC-MoSi2 composites with low electrical resistivity and high infrared emissivity were fabricated via pressureless sintering. The relationship between microstructure evolution and electrical behaviors along with infrared emission properties of the resulting composites is investigated at various sintering temperatures. The electrical resistivity undergoes two significant drops with increasing sintering temperature. Pore elimination bears responsible for the initial decrease in electrical resistivity. Transmission electron microscopy (TEM) observation manifests that the thinned amorphous layers at SiC/MoSi2 interface decrease grain boundary resistivity and allow for electrical percolation to occur when sintering temperature further rises. Additionally, increasing sintering temperature leads to a higher infrared emissivity owing to the formation of Mo4.8Si3C0.6 and the decreased boundaries. The lowest electrical resistivity of 7.2 Ω cm and the highest infrared emissivity of 0.721 are recorded for composite sintered at 2000 ℃. Overall, SiC-MoSi2 composites exhibit a promising prospect as infrared source elements that must endure harsh environments. Silicon carbide Elsevier Molybdenum disilicide Elsevier Sintering temperature Elsevier Electrical percolation Elsevier Grain boundary Elsevier Chen, Jian oth Zhang, Bu-Hao oth Liu, Xue-Jian oth Chen, Zhong-Ming oth Wu, Hai-Bo oth Huang, Zheng-Ren oth Enthalten in Elsevier Science Zhang, Yuanyuan ELSEVIER Improved differential evolution for RSSD-based localization in Gaussian mixture noise 2023 Amsterdam [u.a.] (DE-627)ELV009961755 volume:39 year:2019 number:14 pages:3981-3987 extent:7 https://doi.org/10.1016/j.jeurceramsoc.2019.05.019 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 54.00 Informatik: Allgemeines VZ AR 39 2019 14 3981-3987 7 |
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10.1016/j.jeurceramsoc.2019.05.019 doi GBV00000000000676.pica (DE-627)ELV047273801 (ELSEVIER)S0955-2219(19)30325-5 DE-627 ger DE-627 rakwb eng 004 VZ 54.00 bkl Zheng, Jia-Qi verfasserin aut Electrical percolation and infrared emissivity of pressureless sintered SiC-MoSi<ce:inf loc="post">2</ce:inf> composites tailored by sintering temperature 2019transfer abstract 7 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier SiC-MoSi2 composites with low electrical resistivity and high infrared emissivity were fabricated via pressureless sintering. The relationship between microstructure evolution and electrical behaviors along with infrared emission properties of the resulting composites is investigated at various sintering temperatures. The electrical resistivity undergoes two significant drops with increasing sintering temperature. Pore elimination bears responsible for the initial decrease in electrical resistivity. Transmission electron microscopy (TEM) observation manifests that the thinned amorphous layers at SiC/MoSi2 interface decrease grain boundary resistivity and allow for electrical percolation to occur when sintering temperature further rises. Additionally, increasing sintering temperature leads to a higher infrared emissivity owing to the formation of Mo4.8Si3C0.6 and the decreased boundaries. The lowest electrical resistivity of 7.2 Ω cm and the highest infrared emissivity of 0.721 are recorded for composite sintered at 2000 ℃. Overall, SiC-MoSi2 composites exhibit a promising prospect as infrared source elements that must endure harsh environments. SiC-MoSi2 composites with low electrical resistivity and high infrared emissivity were fabricated via pressureless sintering. The relationship between microstructure evolution and electrical behaviors along with infrared emission properties of the resulting composites is investigated at various sintering temperatures. The electrical resistivity undergoes two significant drops with increasing sintering temperature. Pore elimination bears responsible for the initial decrease in electrical resistivity. Transmission electron microscopy (TEM) observation manifests that the thinned amorphous layers at SiC/MoSi2 interface decrease grain boundary resistivity and allow for electrical percolation to occur when sintering temperature further rises. Additionally, increasing sintering temperature leads to a higher infrared emissivity owing to the formation of Mo4.8Si3C0.6 and the decreased boundaries. The lowest electrical resistivity of 7.2 Ω cm and the highest infrared emissivity of 0.721 are recorded for composite sintered at 2000 ℃. Overall, SiC-MoSi2 composites exhibit a promising prospect as infrared source elements that must endure harsh environments. Silicon carbide Elsevier Molybdenum disilicide Elsevier Sintering temperature Elsevier Electrical percolation Elsevier Grain boundary Elsevier Chen, Jian oth Zhang, Bu-Hao oth Liu, Xue-Jian oth Chen, Zhong-Ming oth Wu, Hai-Bo oth Huang, Zheng-Ren oth Enthalten in Elsevier Science Zhang, Yuanyuan ELSEVIER Improved differential evolution for RSSD-based localization in Gaussian mixture noise 2023 Amsterdam [u.a.] (DE-627)ELV009961755 volume:39 year:2019 number:14 pages:3981-3987 extent:7 https://doi.org/10.1016/j.jeurceramsoc.2019.05.019 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 54.00 Informatik: Allgemeines VZ AR 39 2019 14 3981-3987 7 |
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Enthalten in Improved differential evolution for RSSD-based localization in Gaussian mixture noise Amsterdam [u.a.] volume:39 year:2019 number:14 pages:3981-3987 extent:7 |
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The relationship between microstructure evolution and electrical behaviors along with infrared emission properties of the resulting composites is investigated at various sintering temperatures. The electrical resistivity undergoes two significant drops with increasing sintering temperature. Pore elimination bears responsible for the initial decrease in electrical resistivity. Transmission electron microscopy (TEM) observation manifests that the thinned amorphous layers at SiC/MoSi2 interface decrease grain boundary resistivity and allow for electrical percolation to occur when sintering temperature further rises. Additionally, increasing sintering temperature leads to a higher infrared emissivity owing to the formation of Mo4.8Si3C0.6 and the decreased boundaries. The lowest electrical resistivity of 7.2 Ω cm and the highest infrared emissivity of 0.721 are recorded for composite sintered at 2000 ℃. 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Electrical percolation and infrared emissivity of pressureless sintered SiC-MoSi<ce:inf loc="post">2</ce:inf> composites tailored by sintering temperature |
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electrical percolation and infrared emissivity of pressureless sintered sic-mosi<ce:inf loc="post">2</ce:inf> composites tailored by sintering temperature |
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Electrical percolation and infrared emissivity of pressureless sintered SiC-MoSi<ce:inf loc="post">2</ce:inf> composites tailored by sintering temperature |
| abstract |
SiC-MoSi2 composites with low electrical resistivity and high infrared emissivity were fabricated via pressureless sintering. The relationship between microstructure evolution and electrical behaviors along with infrared emission properties of the resulting composites is investigated at various sintering temperatures. The electrical resistivity undergoes two significant drops with increasing sintering temperature. Pore elimination bears responsible for the initial decrease in electrical resistivity. Transmission electron microscopy (TEM) observation manifests that the thinned amorphous layers at SiC/MoSi2 interface decrease grain boundary resistivity and allow for electrical percolation to occur when sintering temperature further rises. Additionally, increasing sintering temperature leads to a higher infrared emissivity owing to the formation of Mo4.8Si3C0.6 and the decreased boundaries. The lowest electrical resistivity of 7.2 Ω cm and the highest infrared emissivity of 0.721 are recorded for composite sintered at 2000 ℃. Overall, SiC-MoSi2 composites exhibit a promising prospect as infrared source elements that must endure harsh environments. |
| abstractGer |
SiC-MoSi2 composites with low electrical resistivity and high infrared emissivity were fabricated via pressureless sintering. The relationship between microstructure evolution and electrical behaviors along with infrared emission properties of the resulting composites is investigated at various sintering temperatures. The electrical resistivity undergoes two significant drops with increasing sintering temperature. Pore elimination bears responsible for the initial decrease in electrical resistivity. Transmission electron microscopy (TEM) observation manifests that the thinned amorphous layers at SiC/MoSi2 interface decrease grain boundary resistivity and allow for electrical percolation to occur when sintering temperature further rises. Additionally, increasing sintering temperature leads to a higher infrared emissivity owing to the formation of Mo4.8Si3C0.6 and the decreased boundaries. The lowest electrical resistivity of 7.2 Ω cm and the highest infrared emissivity of 0.721 are recorded for composite sintered at 2000 ℃. Overall, SiC-MoSi2 composites exhibit a promising prospect as infrared source elements that must endure harsh environments. |
| abstract_unstemmed |
SiC-MoSi2 composites with low electrical resistivity and high infrared emissivity were fabricated via pressureless sintering. The relationship between microstructure evolution and electrical behaviors along with infrared emission properties of the resulting composites is investigated at various sintering temperatures. The electrical resistivity undergoes two significant drops with increasing sintering temperature. Pore elimination bears responsible for the initial decrease in electrical resistivity. Transmission electron microscopy (TEM) observation manifests that the thinned amorphous layers at SiC/MoSi2 interface decrease grain boundary resistivity and allow for electrical percolation to occur when sintering temperature further rises. Additionally, increasing sintering temperature leads to a higher infrared emissivity owing to the formation of Mo4.8Si3C0.6 and the decreased boundaries. The lowest electrical resistivity of 7.2 Ω cm and the highest infrared emissivity of 0.721 are recorded for composite sintered at 2000 ℃. Overall, SiC-MoSi2 composites exhibit a promising prospect as infrared source elements that must endure harsh environments. |
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Electrical percolation and infrared emissivity of pressureless sintered SiC-MoSi<ce:inf loc="post">2</ce:inf> composites tailored by sintering temperature |
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Chen, Jian Zhang, Bu-Hao Liu, Xue-Jian Chen, Zhong-Ming Wu, Hai-Bo Huang, Zheng-Ren |
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