Optimization of tunnel-junction IBC solar cells based on a series resistance model
This work presents the upscaling of the tunnel IBC technology on large area, Czochralski (Cz) n-type wafers. At the junction level, a self-aligned PECVD masking technology has been developed for the deposition of hydrogenated nano-crystalline silicon (nc-Si:H) layers on industrial 6-inch pseudo-squa...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Lachenal, D. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2019transfer abstract |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Question answering method for infrastructure damage information retrieval from textual data using bidirectional encoder representations from transformers - Kim, Yohan ELSEVIER, 2021, an international journal devoted to photovoltaic, photothermal, and photochemical solar energy conversion, Amsterdam [u.a.] |
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| Übergeordnetes Werk: |
volume:200 ; year:2019 ; day:15 ; month:09 ; pages:0 |
| Links: |
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| DOI / URN: |
10.1016/j.solmat.2019.110036 |
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ELV047488026 |
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| 520 | |a This work presents the upscaling of the tunnel IBC technology on large area, Czochralski (Cz) n-type wafers. At the junction level, a self-aligned PECVD masking technology has been developed for the deposition of hydrogenated nano-crystalline silicon (nc-Si:H) layers on industrial 6-inch pseudo-square wafers. This damage free patterning technology allows state-of-the-art passivation with a minority carrier lifetime of 9 ms at an injection level of 1015 cm-3, thus enabling extremely long diffusion lengths up to several millimetres. The use of indium-free, cost effective aluminium-doped zinc oxide strongly reduces the materials bill of the tunnel-IBC technology while maintaining very low contact resistance for both the electron and the hole contacts. Remarkably, these tunnel-IBC devices demonstrated a conversion efficiency of 25% on large area (90.25 cm2) industrial wafer with a thickness of 155 μm. Series resistance analysis points out probable losses from the hole contact and the base. The limitation of the Transfer Length Method is discussed when used to extract the hole contact resistance. | ||
| 520 | |a This work presents the upscaling of the tunnel IBC technology on large area, Czochralski (Cz) n-type wafers. At the junction level, a self-aligned PECVD masking technology has been developed for the deposition of hydrogenated nano-crystalline silicon (nc-Si:H) layers on industrial 6-inch pseudo-square wafers. This damage free patterning technology allows state-of-the-art passivation with a minority carrier lifetime of 9 ms at an injection level of 1015 cm-3, thus enabling extremely long diffusion lengths up to several millimetres. The use of indium-free, cost effective aluminium-doped zinc oxide strongly reduces the materials bill of the tunnel-IBC technology while maintaining very low contact resistance for both the electron and the hole contacts. Remarkably, these tunnel-IBC devices demonstrated a conversion efficiency of 25% on large area (90.25 cm2) industrial wafer with a thickness of 155 μm. Series resistance analysis points out probable losses from the hole contact and the base. The limitation of the Transfer Length Method is discussed when used to extract the hole contact resistance. | ||
| 650 | 7 | |a Silicon heterojunction |2 Elsevier | |
| 650 | 7 | |a Transfer length method |2 Elsevier | |
| 650 | 7 | |a Series resistance |2 Elsevier | |
| 650 | 7 | |a Fill factor |2 Elsevier | |
| 650 | 7 | |a Interdigitated back contact solar cells |2 Elsevier | |
| 700 | 1 | |a Papet, P. |4 oth | |
| 700 | 1 | |a Legradic, B. |4 oth | |
| 700 | 1 | |a Kramer, R. |4 oth | |
| 700 | 1 | |a Kössler, T. |4 oth | |
| 700 | 1 | |a Andreetta, L. |4 oth | |
| 700 | 1 | |a Holm, N. |4 oth | |
| 700 | 1 | |a Frammelsberger, W. |4 oth | |
| 700 | 1 | |a Baetzner, D.L. |4 oth | |
| 700 | 1 | |a Strahm, B. |4 oth | |
| 700 | 1 | |a Senaud, L.L. |4 oth | |
| 700 | 1 | |a Schüttauf, J.W. |4 oth | |
| 700 | 1 | |a Descoeudres, A. |4 oth | |
| 700 | 1 | |a Christmann, G. |4 oth | |
| 700 | 1 | |a Nicolay, S. |4 oth | |
| 700 | 1 | |a Despeisse, M. |4 oth | |
| 700 | 1 | |a Paviet-Salomon, B. |4 oth | |
| 700 | 1 | |a Ballif, C. |4 oth | |
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10.1016/j.solmat.2019.110036 doi GBV00000000000705.pica (DE-627)ELV047488026 (ELSEVIER)S0927-0248(19)30365-4 DE-627 ger DE-627 rakwb eng 690 VZ 56.03 bkl Lachenal, D. verfasserin aut Optimization of tunnel-junction IBC solar cells based on a series resistance model 2019transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier This work presents the upscaling of the tunnel IBC technology on large area, Czochralski (Cz) n-type wafers. At the junction level, a self-aligned PECVD masking technology has been developed for the deposition of hydrogenated nano-crystalline silicon (nc-Si:H) layers on industrial 6-inch pseudo-square wafers. This damage free patterning technology allows state-of-the-art passivation with a minority carrier lifetime of 9 ms at an injection level of 1015 cm-3, thus enabling extremely long diffusion lengths up to several millimetres. The use of indium-free, cost effective aluminium-doped zinc oxide strongly reduces the materials bill of the tunnel-IBC technology while maintaining very low contact resistance for both the electron and the hole contacts. Remarkably, these tunnel-IBC devices demonstrated a conversion efficiency of 25% on large area (90.25 cm2) industrial wafer with a thickness of 155 μm. Series resistance analysis points out probable losses from the hole contact and the base. The limitation of the Transfer Length Method is discussed when used to extract the hole contact resistance. This work presents the upscaling of the tunnel IBC technology on large area, Czochralski (Cz) n-type wafers. At the junction level, a self-aligned PECVD masking technology has been developed for the deposition of hydrogenated nano-crystalline silicon (nc-Si:H) layers on industrial 6-inch pseudo-square wafers. This damage free patterning technology allows state-of-the-art passivation with a minority carrier lifetime of 9 ms at an injection level of 1015 cm-3, thus enabling extremely long diffusion lengths up to several millimetres. The use of indium-free, cost effective aluminium-doped zinc oxide strongly reduces the materials bill of the tunnel-IBC technology while maintaining very low contact resistance for both the electron and the hole contacts. Remarkably, these tunnel-IBC devices demonstrated a conversion efficiency of 25% on large area (90.25 cm2) industrial wafer with a thickness of 155 μm. Series resistance analysis points out probable losses from the hole contact and the base. The limitation of the Transfer Length Method is discussed when used to extract the hole contact resistance. Silicon heterojunction Elsevier Transfer length method Elsevier Series resistance Elsevier Fill factor Elsevier Interdigitated back contact solar cells Elsevier Papet, P. oth Legradic, B. oth Kramer, R. oth Kössler, T. oth Andreetta, L. oth Holm, N. oth Frammelsberger, W. oth Baetzner, D.L. oth Strahm, B. oth Senaud, L.L. oth Schüttauf, J.W. oth Descoeudres, A. oth Christmann, G. oth Nicolay, S. oth Despeisse, M. oth Paviet-Salomon, B. oth Ballif, C. oth Enthalten in NH, Elsevier Kim, Yohan ELSEVIER Question answering method for infrastructure damage information retrieval from textual data using bidirectional encoder representations from transformers 2021 an international journal devoted to photovoltaic, photothermal, and photochemical solar energy conversion Amsterdam [u.a.] (DE-627)ELV00721202X volume:200 year:2019 day:15 month:09 pages:0 https://doi.org/10.1016/j.solmat.2019.110036 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.03 Methoden im Bauingenieurwesen VZ AR 200 2019 15 0915 0 |
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10.1016/j.solmat.2019.110036 doi GBV00000000000705.pica (DE-627)ELV047488026 (ELSEVIER)S0927-0248(19)30365-4 DE-627 ger DE-627 rakwb eng 690 VZ 56.03 bkl Lachenal, D. verfasserin aut Optimization of tunnel-junction IBC solar cells based on a series resistance model 2019transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier This work presents the upscaling of the tunnel IBC technology on large area, Czochralski (Cz) n-type wafers. At the junction level, a self-aligned PECVD masking technology has been developed for the deposition of hydrogenated nano-crystalline silicon (nc-Si:H) layers on industrial 6-inch pseudo-square wafers. This damage free patterning technology allows state-of-the-art passivation with a minority carrier lifetime of 9 ms at an injection level of 1015 cm-3, thus enabling extremely long diffusion lengths up to several millimetres. The use of indium-free, cost effective aluminium-doped zinc oxide strongly reduces the materials bill of the tunnel-IBC technology while maintaining very low contact resistance for both the electron and the hole contacts. Remarkably, these tunnel-IBC devices demonstrated a conversion efficiency of 25% on large area (90.25 cm2) industrial wafer with a thickness of 155 μm. Series resistance analysis points out probable losses from the hole contact and the base. The limitation of the Transfer Length Method is discussed when used to extract the hole contact resistance. This work presents the upscaling of the tunnel IBC technology on large area, Czochralski (Cz) n-type wafers. At the junction level, a self-aligned PECVD masking technology has been developed for the deposition of hydrogenated nano-crystalline silicon (nc-Si:H) layers on industrial 6-inch pseudo-square wafers. This damage free patterning technology allows state-of-the-art passivation with a minority carrier lifetime of 9 ms at an injection level of 1015 cm-3, thus enabling extremely long diffusion lengths up to several millimetres. The use of indium-free, cost effective aluminium-doped zinc oxide strongly reduces the materials bill of the tunnel-IBC technology while maintaining very low contact resistance for both the electron and the hole contacts. Remarkably, these tunnel-IBC devices demonstrated a conversion efficiency of 25% on large area (90.25 cm2) industrial wafer with a thickness of 155 μm. Series resistance analysis points out probable losses from the hole contact and the base. The limitation of the Transfer Length Method is discussed when used to extract the hole contact resistance. Silicon heterojunction Elsevier Transfer length method Elsevier Series resistance Elsevier Fill factor Elsevier Interdigitated back contact solar cells Elsevier Papet, P. oth Legradic, B. oth Kramer, R. oth Kössler, T. oth Andreetta, L. oth Holm, N. oth Frammelsberger, W. oth Baetzner, D.L. oth Strahm, B. oth Senaud, L.L. oth Schüttauf, J.W. oth Descoeudres, A. oth Christmann, G. oth Nicolay, S. oth Despeisse, M. oth Paviet-Salomon, B. oth Ballif, C. oth Enthalten in NH, Elsevier Kim, Yohan ELSEVIER Question answering method for infrastructure damage information retrieval from textual data using bidirectional encoder representations from transformers 2021 an international journal devoted to photovoltaic, photothermal, and photochemical solar energy conversion Amsterdam [u.a.] (DE-627)ELV00721202X volume:200 year:2019 day:15 month:09 pages:0 https://doi.org/10.1016/j.solmat.2019.110036 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.03 Methoden im Bauingenieurwesen VZ AR 200 2019 15 0915 0 |
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10.1016/j.solmat.2019.110036 doi GBV00000000000705.pica (DE-627)ELV047488026 (ELSEVIER)S0927-0248(19)30365-4 DE-627 ger DE-627 rakwb eng 690 VZ 56.03 bkl Lachenal, D. verfasserin aut Optimization of tunnel-junction IBC solar cells based on a series resistance model 2019transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier This work presents the upscaling of the tunnel IBC technology on large area, Czochralski (Cz) n-type wafers. At the junction level, a self-aligned PECVD masking technology has been developed for the deposition of hydrogenated nano-crystalline silicon (nc-Si:H) layers on industrial 6-inch pseudo-square wafers. This damage free patterning technology allows state-of-the-art passivation with a minority carrier lifetime of 9 ms at an injection level of 1015 cm-3, thus enabling extremely long diffusion lengths up to several millimetres. The use of indium-free, cost effective aluminium-doped zinc oxide strongly reduces the materials bill of the tunnel-IBC technology while maintaining very low contact resistance for both the electron and the hole contacts. Remarkably, these tunnel-IBC devices demonstrated a conversion efficiency of 25% on large area (90.25 cm2) industrial wafer with a thickness of 155 μm. Series resistance analysis points out probable losses from the hole contact and the base. The limitation of the Transfer Length Method is discussed when used to extract the hole contact resistance. This work presents the upscaling of the tunnel IBC technology on large area, Czochralski (Cz) n-type wafers. At the junction level, a self-aligned PECVD masking technology has been developed for the deposition of hydrogenated nano-crystalline silicon (nc-Si:H) layers on industrial 6-inch pseudo-square wafers. This damage free patterning technology allows state-of-the-art passivation with a minority carrier lifetime of 9 ms at an injection level of 1015 cm-3, thus enabling extremely long diffusion lengths up to several millimetres. The use of indium-free, cost effective aluminium-doped zinc oxide strongly reduces the materials bill of the tunnel-IBC technology while maintaining very low contact resistance for both the electron and the hole contacts. Remarkably, these tunnel-IBC devices demonstrated a conversion efficiency of 25% on large area (90.25 cm2) industrial wafer with a thickness of 155 μm. Series resistance analysis points out probable losses from the hole contact and the base. The limitation of the Transfer Length Method is discussed when used to extract the hole contact resistance. Silicon heterojunction Elsevier Transfer length method Elsevier Series resistance Elsevier Fill factor Elsevier Interdigitated back contact solar cells Elsevier Papet, P. oth Legradic, B. oth Kramer, R. oth Kössler, T. oth Andreetta, L. oth Holm, N. oth Frammelsberger, W. oth Baetzner, D.L. oth Strahm, B. oth Senaud, L.L. oth Schüttauf, J.W. oth Descoeudres, A. oth Christmann, G. oth Nicolay, S. oth Despeisse, M. oth Paviet-Salomon, B. oth Ballif, C. oth Enthalten in NH, Elsevier Kim, Yohan ELSEVIER Question answering method for infrastructure damage information retrieval from textual data using bidirectional encoder representations from transformers 2021 an international journal devoted to photovoltaic, photothermal, and photochemical solar energy conversion Amsterdam [u.a.] (DE-627)ELV00721202X volume:200 year:2019 day:15 month:09 pages:0 https://doi.org/10.1016/j.solmat.2019.110036 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.03 Methoden im Bauingenieurwesen VZ AR 200 2019 15 0915 0 |
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10.1016/j.solmat.2019.110036 doi GBV00000000000705.pica (DE-627)ELV047488026 (ELSEVIER)S0927-0248(19)30365-4 DE-627 ger DE-627 rakwb eng 690 VZ 56.03 bkl Lachenal, D. verfasserin aut Optimization of tunnel-junction IBC solar cells based on a series resistance model 2019transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier This work presents the upscaling of the tunnel IBC technology on large area, Czochralski (Cz) n-type wafers. At the junction level, a self-aligned PECVD masking technology has been developed for the deposition of hydrogenated nano-crystalline silicon (nc-Si:H) layers on industrial 6-inch pseudo-square wafers. This damage free patterning technology allows state-of-the-art passivation with a minority carrier lifetime of 9 ms at an injection level of 1015 cm-3, thus enabling extremely long diffusion lengths up to several millimetres. The use of indium-free, cost effective aluminium-doped zinc oxide strongly reduces the materials bill of the tunnel-IBC technology while maintaining very low contact resistance for both the electron and the hole contacts. Remarkably, these tunnel-IBC devices demonstrated a conversion efficiency of 25% on large area (90.25 cm2) industrial wafer with a thickness of 155 μm. Series resistance analysis points out probable losses from the hole contact and the base. The limitation of the Transfer Length Method is discussed when used to extract the hole contact resistance. This work presents the upscaling of the tunnel IBC technology on large area, Czochralski (Cz) n-type wafers. At the junction level, a self-aligned PECVD masking technology has been developed for the deposition of hydrogenated nano-crystalline silicon (nc-Si:H) layers on industrial 6-inch pseudo-square wafers. This damage free patterning technology allows state-of-the-art passivation with a minority carrier lifetime of 9 ms at an injection level of 1015 cm-3, thus enabling extremely long diffusion lengths up to several millimetres. The use of indium-free, cost effective aluminium-doped zinc oxide strongly reduces the materials bill of the tunnel-IBC technology while maintaining very low contact resistance for both the electron and the hole contacts. Remarkably, these tunnel-IBC devices demonstrated a conversion efficiency of 25% on large area (90.25 cm2) industrial wafer with a thickness of 155 μm. Series resistance analysis points out probable losses from the hole contact and the base. The limitation of the Transfer Length Method is discussed when used to extract the hole contact resistance. Silicon heterojunction Elsevier Transfer length method Elsevier Series resistance Elsevier Fill factor Elsevier Interdigitated back contact solar cells Elsevier Papet, P. oth Legradic, B. oth Kramer, R. oth Kössler, T. oth Andreetta, L. oth Holm, N. oth Frammelsberger, W. oth Baetzner, D.L. oth Strahm, B. oth Senaud, L.L. oth Schüttauf, J.W. oth Descoeudres, A. oth Christmann, G. oth Nicolay, S. oth Despeisse, M. oth Paviet-Salomon, B. oth Ballif, C. oth Enthalten in NH, Elsevier Kim, Yohan ELSEVIER Question answering method for infrastructure damage information retrieval from textual data using bidirectional encoder representations from transformers 2021 an international journal devoted to photovoltaic, photothermal, and photochemical solar energy conversion Amsterdam [u.a.] (DE-627)ELV00721202X volume:200 year:2019 day:15 month:09 pages:0 https://doi.org/10.1016/j.solmat.2019.110036 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.03 Methoden im Bauingenieurwesen VZ AR 200 2019 15 0915 0 |
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10.1016/j.solmat.2019.110036 doi GBV00000000000705.pica (DE-627)ELV047488026 (ELSEVIER)S0927-0248(19)30365-4 DE-627 ger DE-627 rakwb eng 690 VZ 56.03 bkl Lachenal, D. verfasserin aut Optimization of tunnel-junction IBC solar cells based on a series resistance model 2019transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier This work presents the upscaling of the tunnel IBC technology on large area, Czochralski (Cz) n-type wafers. At the junction level, a self-aligned PECVD masking technology has been developed for the deposition of hydrogenated nano-crystalline silicon (nc-Si:H) layers on industrial 6-inch pseudo-square wafers. This damage free patterning technology allows state-of-the-art passivation with a minority carrier lifetime of 9 ms at an injection level of 1015 cm-3, thus enabling extremely long diffusion lengths up to several millimetres. The use of indium-free, cost effective aluminium-doped zinc oxide strongly reduces the materials bill of the tunnel-IBC technology while maintaining very low contact resistance for both the electron and the hole contacts. Remarkably, these tunnel-IBC devices demonstrated a conversion efficiency of 25% on large area (90.25 cm2) industrial wafer with a thickness of 155 μm. Series resistance analysis points out probable losses from the hole contact and the base. The limitation of the Transfer Length Method is discussed when used to extract the hole contact resistance. This work presents the upscaling of the tunnel IBC technology on large area, Czochralski (Cz) n-type wafers. At the junction level, a self-aligned PECVD masking technology has been developed for the deposition of hydrogenated nano-crystalline silicon (nc-Si:H) layers on industrial 6-inch pseudo-square wafers. This damage free patterning technology allows state-of-the-art passivation with a minority carrier lifetime of 9 ms at an injection level of 1015 cm-3, thus enabling extremely long diffusion lengths up to several millimetres. The use of indium-free, cost effective aluminium-doped zinc oxide strongly reduces the materials bill of the tunnel-IBC technology while maintaining very low contact resistance for both the electron and the hole contacts. Remarkably, these tunnel-IBC devices demonstrated a conversion efficiency of 25% on large area (90.25 cm2) industrial wafer with a thickness of 155 μm. Series resistance analysis points out probable losses from the hole contact and the base. The limitation of the Transfer Length Method is discussed when used to extract the hole contact resistance. Silicon heterojunction Elsevier Transfer length method Elsevier Series resistance Elsevier Fill factor Elsevier Interdigitated back contact solar cells Elsevier Papet, P. oth Legradic, B. oth Kramer, R. oth Kössler, T. oth Andreetta, L. oth Holm, N. oth Frammelsberger, W. oth Baetzner, D.L. oth Strahm, B. oth Senaud, L.L. oth Schüttauf, J.W. oth Descoeudres, A. oth Christmann, G. oth Nicolay, S. oth Despeisse, M. oth Paviet-Salomon, B. oth Ballif, C. oth Enthalten in NH, Elsevier Kim, Yohan ELSEVIER Question answering method for infrastructure damage information retrieval from textual data using bidirectional encoder representations from transformers 2021 an international journal devoted to photovoltaic, photothermal, and photochemical solar energy conversion Amsterdam [u.a.] (DE-627)ELV00721202X volume:200 year:2019 day:15 month:09 pages:0 https://doi.org/10.1016/j.solmat.2019.110036 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.03 Methoden im Bauingenieurwesen VZ AR 200 2019 15 0915 0 |
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Optimization of tunnel-junction IBC solar cells based on a series resistance model |
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This work presents the upscaling of the tunnel IBC technology on large area, Czochralski (Cz) n-type wafers. At the junction level, a self-aligned PECVD masking technology has been developed for the deposition of hydrogenated nano-crystalline silicon (nc-Si:H) layers on industrial 6-inch pseudo-square wafers. This damage free patterning technology allows state-of-the-art passivation with a minority carrier lifetime of 9 ms at an injection level of 1015 cm-3, thus enabling extremely long diffusion lengths up to several millimetres. The use of indium-free, cost effective aluminium-doped zinc oxide strongly reduces the materials bill of the tunnel-IBC technology while maintaining very low contact resistance for both the electron and the hole contacts. Remarkably, these tunnel-IBC devices demonstrated a conversion efficiency of 25% on large area (90.25 cm2) industrial wafer with a thickness of 155 μm. Series resistance analysis points out probable losses from the hole contact and the base. The limitation of the Transfer Length Method is discussed when used to extract the hole contact resistance. |
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This work presents the upscaling of the tunnel IBC technology on large area, Czochralski (Cz) n-type wafers. At the junction level, a self-aligned PECVD masking technology has been developed for the deposition of hydrogenated nano-crystalline silicon (nc-Si:H) layers on industrial 6-inch pseudo-square wafers. This damage free patterning technology allows state-of-the-art passivation with a minority carrier lifetime of 9 ms at an injection level of 1015 cm-3, thus enabling extremely long diffusion lengths up to several millimetres. The use of indium-free, cost effective aluminium-doped zinc oxide strongly reduces the materials bill of the tunnel-IBC technology while maintaining very low contact resistance for both the electron and the hole contacts. Remarkably, these tunnel-IBC devices demonstrated a conversion efficiency of 25% on large area (90.25 cm2) industrial wafer with a thickness of 155 μm. Series resistance analysis points out probable losses from the hole contact and the base. The limitation of the Transfer Length Method is discussed when used to extract the hole contact resistance. |
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This work presents the upscaling of the tunnel IBC technology on large area, Czochralski (Cz) n-type wafers. At the junction level, a self-aligned PECVD masking technology has been developed for the deposition of hydrogenated nano-crystalline silicon (nc-Si:H) layers on industrial 6-inch pseudo-square wafers. This damage free patterning technology allows state-of-the-art passivation with a minority carrier lifetime of 9 ms at an injection level of 1015 cm-3, thus enabling extremely long diffusion lengths up to several millimetres. The use of indium-free, cost effective aluminium-doped zinc oxide strongly reduces the materials bill of the tunnel-IBC technology while maintaining very low contact resistance for both the electron and the hole contacts. Remarkably, these tunnel-IBC devices demonstrated a conversion efficiency of 25% on large area (90.25 cm2) industrial wafer with a thickness of 155 μm. Series resistance analysis points out probable losses from the hole contact and the base. The limitation of the Transfer Length Method is discussed when used to extract the hole contact resistance. |
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The limitation of the Transfer Length Method is discussed when used to extract the hole contact resistance.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">This work presents the upscaling of the tunnel IBC technology on large area, Czochralski (Cz) n-type wafers. At the junction level, a self-aligned PECVD masking technology has been developed for the deposition of hydrogenated nano-crystalline silicon (nc-Si:H) layers on industrial 6-inch pseudo-square wafers. This damage free patterning technology allows state-of-the-art passivation with a minority carrier lifetime of 9 ms at an injection level of 1015 cm-3, thus enabling extremely long diffusion lengths up to several millimetres. The use of indium-free, cost effective aluminium-doped zinc oxide strongly reduces the materials bill of the tunnel-IBC technology while maintaining very low contact resistance for both the electron and the hole contacts. Remarkably, these tunnel-IBC devices demonstrated a conversion efficiency of 25% on large area (90.25 cm2) industrial wafer with a thickness of 155 μm. Series resistance analysis points out probable losses from the hole contact and the base. The limitation of the Transfer Length Method is discussed when used to extract the hole contact resistance.</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Silicon heterojunction</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Transfer length method</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Series resistance</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Fill factor</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Interdigitated back contact solar cells</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Papet, P.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Legradic, B.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kramer, R.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kössler, T.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Andreetta, L.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Holm, N.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Frammelsberger, W.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Baetzner, D.L.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Strahm, B.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Senaud, L.L.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Schüttauf, J.W.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Descoeudres, A.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Christmann, G.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Nicolay, S.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Despeisse, M.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Paviet-Salomon, B.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ballif, C.</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="n">NH, Elsevier</subfield><subfield code="a">Kim, Yohan ELSEVIER</subfield><subfield code="t">Question answering method for infrastructure damage information retrieval from textual data using bidirectional encoder representations from transformers</subfield><subfield code="d">2021</subfield><subfield code="d">an international journal devoted to photovoltaic, photothermal, and photochemical solar energy conversion</subfield><subfield code="g">Amsterdam [u.a.]</subfield><subfield code="w">(DE-627)ELV00721202X</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:200</subfield><subfield code="g">year:2019</subfield><subfield code="g">day:15</subfield><subfield code="g">month:09</subfield><subfield code="g">pages:0</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1016/j.solmat.2019.110036</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">56.03</subfield><subfield code="j">Methoden im Bauingenieurwesen</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">200</subfield><subfield code="j">2019</subfield><subfield code="b">15</subfield><subfield code="c">0915</subfield><subfield code="h">0</subfield></datafield></record></collection>
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