Sputtering of silicon surface by silver-ion implantation
• For the first time, sputtering of Si surface by Ag-ion beam was studied. • Dependence of sputtered thickness of Ag:Si layer on dose was observed. • The dependence Yield(Dose) determined experimentally is linear. • Sputtering Yield of Ag:Si for Ag-ion beam is 1.6.
Gespeichert in:
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Stepanov, A.L. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2019 |
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| Schlagwörter: |
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| Umfang: |
3 |
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| Übergeordnetes Werk: |
Enthalten in: Editorial Comment - Unwala, Darius J. ELSEVIER, 2013, a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics, Amsterdam [u.a.] |
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| Übergeordnetes Werk: |
volume:457 ; year:2019 ; day:15 ; month:10 ; pages:1-3 ; extent:3 |
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| DOI / URN: |
10.1016/j.nimb.2019.07.020 |
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| 520 | |a • For the first time, sputtering of Si surface by Ag-ion beam was studied. • Dependence of sputtered thickness of Ag:Si layer on dose was observed. • The dependence Yield(Dose) determined experimentally is linear. • Sputtering Yield of Ag:Si for Ag-ion beam is 1.6. | ||
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10.1016/j.nimb.2019.07.020 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000000898.pica (DE-627)ELV047507012 (ELSEVIER)S0168-583X(19)30511-7 DE-627 ger DE-627 rakwb eng 610 VZ 610 VZ 44.85 bkl Stepanov, A.L. verfasserin aut Sputtering of silicon surface by silver-ion implantation 2019 3 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier • For the first time, sputtering of Si surface by Ag-ion beam was studied. • Dependence of sputtered thickness of Ag:Si layer on dose was observed. • The dependence Yield(Dose) determined experimentally is linear. • Sputtering Yield of Ag:Si for Ag-ion beam is 1.6. Ion implantation Elsevier Surface sputtering Elsevier Porous silicon Elsevier Silver ions Elsevier Vorobev, V.V. oth Rogov, A.M. oth Nuzhdin, V.I. oth Valeev, V.F. oth Enthalten in Elsevier Unwala, Darius J. ELSEVIER Editorial Comment 2013 a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics Amsterdam [u.a.] (DE-627)ELV011304669 volume:457 year:2019 day:15 month:10 pages:1-3 extent:3 https://doi.org/10.1016/j.nimb.2019.07.020 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_21 GBV_ILN_22 GBV_ILN_24 GBV_ILN_40 GBV_ILN_62 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2007 44.85 Kardiologie Angiologie VZ AR 457 2019 15 1015 1-3 3 |
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10.1016/j.nimb.2019.07.020 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000000898.pica (DE-627)ELV047507012 (ELSEVIER)S0168-583X(19)30511-7 DE-627 ger DE-627 rakwb eng 610 VZ 610 VZ 44.85 bkl Stepanov, A.L. verfasserin aut Sputtering of silicon surface by silver-ion implantation 2019 3 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier • For the first time, sputtering of Si surface by Ag-ion beam was studied. • Dependence of sputtered thickness of Ag:Si layer on dose was observed. • The dependence Yield(Dose) determined experimentally is linear. • Sputtering Yield of Ag:Si for Ag-ion beam is 1.6. Ion implantation Elsevier Surface sputtering Elsevier Porous silicon Elsevier Silver ions Elsevier Vorobev, V.V. oth Rogov, A.M. oth Nuzhdin, V.I. oth Valeev, V.F. oth Enthalten in Elsevier Unwala, Darius J. ELSEVIER Editorial Comment 2013 a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics Amsterdam [u.a.] (DE-627)ELV011304669 volume:457 year:2019 day:15 month:10 pages:1-3 extent:3 https://doi.org/10.1016/j.nimb.2019.07.020 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_21 GBV_ILN_22 GBV_ILN_24 GBV_ILN_40 GBV_ILN_62 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2007 44.85 Kardiologie Angiologie VZ AR 457 2019 15 1015 1-3 3 |
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10.1016/j.nimb.2019.07.020 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000000898.pica (DE-627)ELV047507012 (ELSEVIER)S0168-583X(19)30511-7 DE-627 ger DE-627 rakwb eng 610 VZ 610 VZ 44.85 bkl Stepanov, A.L. verfasserin aut Sputtering of silicon surface by silver-ion implantation 2019 3 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier • For the first time, sputtering of Si surface by Ag-ion beam was studied. • Dependence of sputtered thickness of Ag:Si layer on dose was observed. • The dependence Yield(Dose) determined experimentally is linear. • Sputtering Yield of Ag:Si for Ag-ion beam is 1.6. Ion implantation Elsevier Surface sputtering Elsevier Porous silicon Elsevier Silver ions Elsevier Vorobev, V.V. oth Rogov, A.M. oth Nuzhdin, V.I. oth Valeev, V.F. oth Enthalten in Elsevier Unwala, Darius J. ELSEVIER Editorial Comment 2013 a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics Amsterdam [u.a.] (DE-627)ELV011304669 volume:457 year:2019 day:15 month:10 pages:1-3 extent:3 https://doi.org/10.1016/j.nimb.2019.07.020 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_21 GBV_ILN_22 GBV_ILN_24 GBV_ILN_40 GBV_ILN_62 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2007 44.85 Kardiologie Angiologie VZ AR 457 2019 15 1015 1-3 3 |
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10.1016/j.nimb.2019.07.020 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000000898.pica (DE-627)ELV047507012 (ELSEVIER)S0168-583X(19)30511-7 DE-627 ger DE-627 rakwb eng 610 VZ 610 VZ 44.85 bkl Stepanov, A.L. verfasserin aut Sputtering of silicon surface by silver-ion implantation 2019 3 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier • For the first time, sputtering of Si surface by Ag-ion beam was studied. • Dependence of sputtered thickness of Ag:Si layer on dose was observed. • The dependence Yield(Dose) determined experimentally is linear. • Sputtering Yield of Ag:Si for Ag-ion beam is 1.6. Ion implantation Elsevier Surface sputtering Elsevier Porous silicon Elsevier Silver ions Elsevier Vorobev, V.V. oth Rogov, A.M. oth Nuzhdin, V.I. oth Valeev, V.F. oth Enthalten in Elsevier Unwala, Darius J. ELSEVIER Editorial Comment 2013 a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics Amsterdam [u.a.] (DE-627)ELV011304669 volume:457 year:2019 day:15 month:10 pages:1-3 extent:3 https://doi.org/10.1016/j.nimb.2019.07.020 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_21 GBV_ILN_22 GBV_ILN_24 GBV_ILN_40 GBV_ILN_62 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2007 44.85 Kardiologie Angiologie VZ AR 457 2019 15 1015 1-3 3 |
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10.1016/j.nimb.2019.07.020 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000000898.pica (DE-627)ELV047507012 (ELSEVIER)S0168-583X(19)30511-7 DE-627 ger DE-627 rakwb eng 610 VZ 610 VZ 44.85 bkl Stepanov, A.L. verfasserin aut Sputtering of silicon surface by silver-ion implantation 2019 3 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier • For the first time, sputtering of Si surface by Ag-ion beam was studied. • Dependence of sputtered thickness of Ag:Si layer on dose was observed. • The dependence Yield(Dose) determined experimentally is linear. • Sputtering Yield of Ag:Si for Ag-ion beam is 1.6. Ion implantation Elsevier Surface sputtering Elsevier Porous silicon Elsevier Silver ions Elsevier Vorobev, V.V. oth Rogov, A.M. oth Nuzhdin, V.I. oth Valeev, V.F. oth Enthalten in Elsevier Unwala, Darius J. ELSEVIER Editorial Comment 2013 a journal on accelerators, instrumentation and techniques applied to research in nuclear and atomic physics, materials science and related fields in physics Amsterdam [u.a.] (DE-627)ELV011304669 volume:457 year:2019 day:15 month:10 pages:1-3 extent:3 https://doi.org/10.1016/j.nimb.2019.07.020 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_21 GBV_ILN_22 GBV_ILN_24 GBV_ILN_40 GBV_ILN_62 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2007 44.85 Kardiologie Angiologie VZ AR 457 2019 15 1015 1-3 3 |
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Sputtering of silicon surface by silver-ion implantation |
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• For the first time, sputtering of Si surface by Ag-ion beam was studied. • Dependence of sputtered thickness of Ag:Si layer on dose was observed. • The dependence Yield(Dose) determined experimentally is linear. • Sputtering Yield of Ag:Si for Ag-ion beam is 1.6. |
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• For the first time, sputtering of Si surface by Ag-ion beam was studied. • Dependence of sputtered thickness of Ag:Si layer on dose was observed. • The dependence Yield(Dose) determined experimentally is linear. • Sputtering Yield of Ag:Si for Ag-ion beam is 1.6. |
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• For the first time, sputtering of Si surface by Ag-ion beam was studied. • Dependence of sputtered thickness of Ag:Si layer on dose was observed. • The dependence Yield(Dose) determined experimentally is linear. • Sputtering Yield of Ag:Si for Ag-ion beam is 1.6. |
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Sputtering of silicon surface by silver-ion implantation |
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https://doi.org/10.1016/j.nimb.2019.07.020 |
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Vorobev, V.V. Rogov, A.M. Nuzhdin, V.I. Valeev, V.F. |
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Vorobev, V.V. Rogov, A.M. Nuzhdin, V.I. Valeev, V.F. |
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| doi_str |
10.1016/j.nimb.2019.07.020 |
| up_date |
2024-07-06T23:04:18.732Z |
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