Photoconductive response of a Field-Effect Transistor through the traps effect
In this paper, the photoconductive parameters of Field-Effect Transistors (FETs) excited by high-frequency optical source is studied. The FETs plasma oscillations dominated in the Terahertz (THz) range demonstrates their important effect related to THz emission and detection at room temperature. The...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Bouzidi, Bellal [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2019transfer abstract |
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| Schlagwörter: |
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| Umfang: |
5 |
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| Übergeordnetes Werk: |
Enthalten in: Effect of hawthorn seed extract on the gastrointestinal function of rats with diabetic gastroparesis - Niu, Zhenzhen ELSEVIER, 2020, Amsterdam |
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| Übergeordnetes Werk: |
volume:451 ; year:2019 ; day:15 ; month:11 ; pages:281-285 ; extent:5 |
| Links: |
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| DOI / URN: |
10.1016/j.optcom.2019.06.039 |
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ELV047540540 |
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| 520 | |a In this paper, the photoconductive parameters of Field-Effect Transistors (FETs) excited by high-frequency optical source is studied. The FETs plasma oscillations dominated in the Terahertz (THz) range demonstrates their important effect related to THz emission and detection at room temperature. The study taking into account the plasma modes of FETs which can be coupled with photoexcitation optical pulse. Particularly, the model using the excess carriers flow through the traps density and the small-signal response of Field-Effect Transistors to describe the photoconductivity and the drain current in external circuit. The effect of the carriers relaxation time, the excited wavelength and the channel plasma modes on photoexcited FETs behavior is investigated. This leads to the possibilities of increasing the photoconductive contribution in total current by coupling both the microwave and optical FET proprieties. | ||
| 520 | |a In this paper, the photoconductive parameters of Field-Effect Transistors (FETs) excited by high-frequency optical source is studied. The FETs plasma oscillations dominated in the Terahertz (THz) range demonstrates their important effect related to THz emission and detection at room temperature. The study taking into account the plasma modes of FETs which can be coupled with photoexcitation optical pulse. Particularly, the model using the excess carriers flow through the traps density and the small-signal response of Field-Effect Transistors to describe the photoconductivity and the drain current in external circuit. The effect of the carriers relaxation time, the excited wavelength and the channel plasma modes on photoexcited FETs behavior is investigated. This leads to the possibilities of increasing the photoconductive contribution in total current by coupling both the microwave and optical FET proprieties. | ||
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| 650 | 7 | |a Optical wavelength |2 Elsevier | |
| 650 | 7 | |a teraHertz frequency (THz) |2 Elsevier | |
| 650 | 7 | |a Field-Effect Transistor |2 Elsevier | |
| 650 | 7 | |a Photoconductive parameters |2 Elsevier | |
| 700 | 1 | |a Mahi, Fatima Zohra |4 oth | |
| 700 | 1 | |a Mahi, AbdelHamid |4 oth | |
| 700 | 1 | |a Varani, Luca |4 oth | |
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10.1016/j.optcom.2019.06.039 doi GBV00000000000712.pica (DE-627)ELV047540540 (ELSEVIER)S0030-4018(19)30549-8 DE-627 ger DE-627 rakwb eng 580 VZ AFRIKA DE-30 fid BIODIV DE-30 fid 42.38 bkl Bouzidi, Bellal verfasserin aut Photoconductive response of a Field-Effect Transistor through the traps effect 2019transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier In this paper, the photoconductive parameters of Field-Effect Transistors (FETs) excited by high-frequency optical source is studied. The FETs plasma oscillations dominated in the Terahertz (THz) range demonstrates their important effect related to THz emission and detection at room temperature. The study taking into account the plasma modes of FETs which can be coupled with photoexcitation optical pulse. Particularly, the model using the excess carriers flow through the traps density and the small-signal response of Field-Effect Transistors to describe the photoconductivity and the drain current in external circuit. The effect of the carriers relaxation time, the excited wavelength and the channel plasma modes on photoexcited FETs behavior is investigated. This leads to the possibilities of increasing the photoconductive contribution in total current by coupling both the microwave and optical FET proprieties. In this paper, the photoconductive parameters of Field-Effect Transistors (FETs) excited by high-frequency optical source is studied. The FETs plasma oscillations dominated in the Terahertz (THz) range demonstrates their important effect related to THz emission and detection at room temperature. The study taking into account the plasma modes of FETs which can be coupled with photoexcitation optical pulse. Particularly, the model using the excess carriers flow through the traps density and the small-signal response of Field-Effect Transistors to describe the photoconductivity and the drain current in external circuit. The effect of the carriers relaxation time, the excited wavelength and the channel plasma modes on photoexcited FETs behavior is investigated. This leads to the possibilities of increasing the photoconductive contribution in total current by coupling both the microwave and optical FET proprieties. Small-signal response Elsevier Optical wavelength Elsevier teraHertz frequency (THz) Elsevier Field-Effect Transistor Elsevier Photoconductive parameters Elsevier Mahi, Fatima Zohra oth Mahi, AbdelHamid oth Varani, Luca oth Enthalten in Niu, Zhenzhen ELSEVIER Effect of hawthorn seed extract on the gastrointestinal function of rats with diabetic gastroparesis 2020 Amsterdam (DE-627)ELV004103645 volume:451 year:2019 day:15 month:11 pages:281-285 extent:5 https://doi.org/10.1016/j.optcom.2019.06.039 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U FID-AFRIKA FID-BIODIV 42.38 Botanik: Allgemeines VZ AR 451 2019 15 1115 281-285 5 |
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10.1016/j.optcom.2019.06.039 doi GBV00000000000712.pica (DE-627)ELV047540540 (ELSEVIER)S0030-4018(19)30549-8 DE-627 ger DE-627 rakwb eng 580 VZ AFRIKA DE-30 fid BIODIV DE-30 fid 42.38 bkl Bouzidi, Bellal verfasserin aut Photoconductive response of a Field-Effect Transistor through the traps effect 2019transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier In this paper, the photoconductive parameters of Field-Effect Transistors (FETs) excited by high-frequency optical source is studied. The FETs plasma oscillations dominated in the Terahertz (THz) range demonstrates their important effect related to THz emission and detection at room temperature. The study taking into account the plasma modes of FETs which can be coupled with photoexcitation optical pulse. Particularly, the model using the excess carriers flow through the traps density and the small-signal response of Field-Effect Transistors to describe the photoconductivity and the drain current in external circuit. The effect of the carriers relaxation time, the excited wavelength and the channel plasma modes on photoexcited FETs behavior is investigated. This leads to the possibilities of increasing the photoconductive contribution in total current by coupling both the microwave and optical FET proprieties. In this paper, the photoconductive parameters of Field-Effect Transistors (FETs) excited by high-frequency optical source is studied. The FETs plasma oscillations dominated in the Terahertz (THz) range demonstrates their important effect related to THz emission and detection at room temperature. The study taking into account the plasma modes of FETs which can be coupled with photoexcitation optical pulse. Particularly, the model using the excess carriers flow through the traps density and the small-signal response of Field-Effect Transistors to describe the photoconductivity and the drain current in external circuit. The effect of the carriers relaxation time, the excited wavelength and the channel plasma modes on photoexcited FETs behavior is investigated. This leads to the possibilities of increasing the photoconductive contribution in total current by coupling both the microwave and optical FET proprieties. Small-signal response Elsevier Optical wavelength Elsevier teraHertz frequency (THz) Elsevier Field-Effect Transistor Elsevier Photoconductive parameters Elsevier Mahi, Fatima Zohra oth Mahi, AbdelHamid oth Varani, Luca oth Enthalten in Niu, Zhenzhen ELSEVIER Effect of hawthorn seed extract on the gastrointestinal function of rats with diabetic gastroparesis 2020 Amsterdam (DE-627)ELV004103645 volume:451 year:2019 day:15 month:11 pages:281-285 extent:5 https://doi.org/10.1016/j.optcom.2019.06.039 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U FID-AFRIKA FID-BIODIV 42.38 Botanik: Allgemeines VZ AR 451 2019 15 1115 281-285 5 |
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10.1016/j.optcom.2019.06.039 doi GBV00000000000712.pica (DE-627)ELV047540540 (ELSEVIER)S0030-4018(19)30549-8 DE-627 ger DE-627 rakwb eng 580 VZ AFRIKA DE-30 fid BIODIV DE-30 fid 42.38 bkl Bouzidi, Bellal verfasserin aut Photoconductive response of a Field-Effect Transistor through the traps effect 2019transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier In this paper, the photoconductive parameters of Field-Effect Transistors (FETs) excited by high-frequency optical source is studied. The FETs plasma oscillations dominated in the Terahertz (THz) range demonstrates their important effect related to THz emission and detection at room temperature. The study taking into account the plasma modes of FETs which can be coupled with photoexcitation optical pulse. Particularly, the model using the excess carriers flow through the traps density and the small-signal response of Field-Effect Transistors to describe the photoconductivity and the drain current in external circuit. The effect of the carriers relaxation time, the excited wavelength and the channel plasma modes on photoexcited FETs behavior is investigated. This leads to the possibilities of increasing the photoconductive contribution in total current by coupling both the microwave and optical FET proprieties. In this paper, the photoconductive parameters of Field-Effect Transistors (FETs) excited by high-frequency optical source is studied. The FETs plasma oscillations dominated in the Terahertz (THz) range demonstrates their important effect related to THz emission and detection at room temperature. The study taking into account the plasma modes of FETs which can be coupled with photoexcitation optical pulse. Particularly, the model using the excess carriers flow through the traps density and the small-signal response of Field-Effect Transistors to describe the photoconductivity and the drain current in external circuit. The effect of the carriers relaxation time, the excited wavelength and the channel plasma modes on photoexcited FETs behavior is investigated. This leads to the possibilities of increasing the photoconductive contribution in total current by coupling both the microwave and optical FET proprieties. Small-signal response Elsevier Optical wavelength Elsevier teraHertz frequency (THz) Elsevier Field-Effect Transistor Elsevier Photoconductive parameters Elsevier Mahi, Fatima Zohra oth Mahi, AbdelHamid oth Varani, Luca oth Enthalten in Niu, Zhenzhen ELSEVIER Effect of hawthorn seed extract on the gastrointestinal function of rats with diabetic gastroparesis 2020 Amsterdam (DE-627)ELV004103645 volume:451 year:2019 day:15 month:11 pages:281-285 extent:5 https://doi.org/10.1016/j.optcom.2019.06.039 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U FID-AFRIKA FID-BIODIV 42.38 Botanik: Allgemeines VZ AR 451 2019 15 1115 281-285 5 |
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10.1016/j.optcom.2019.06.039 doi GBV00000000000712.pica (DE-627)ELV047540540 (ELSEVIER)S0030-4018(19)30549-8 DE-627 ger DE-627 rakwb eng 580 VZ AFRIKA DE-30 fid BIODIV DE-30 fid 42.38 bkl Bouzidi, Bellal verfasserin aut Photoconductive response of a Field-Effect Transistor through the traps effect 2019transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier In this paper, the photoconductive parameters of Field-Effect Transistors (FETs) excited by high-frequency optical source is studied. The FETs plasma oscillations dominated in the Terahertz (THz) range demonstrates their important effect related to THz emission and detection at room temperature. The study taking into account the plasma modes of FETs which can be coupled with photoexcitation optical pulse. Particularly, the model using the excess carriers flow through the traps density and the small-signal response of Field-Effect Transistors to describe the photoconductivity and the drain current in external circuit. The effect of the carriers relaxation time, the excited wavelength and the channel plasma modes on photoexcited FETs behavior is investigated. This leads to the possibilities of increasing the photoconductive contribution in total current by coupling both the microwave and optical FET proprieties. In this paper, the photoconductive parameters of Field-Effect Transistors (FETs) excited by high-frequency optical source is studied. The FETs plasma oscillations dominated in the Terahertz (THz) range demonstrates their important effect related to THz emission and detection at room temperature. The study taking into account the plasma modes of FETs which can be coupled with photoexcitation optical pulse. Particularly, the model using the excess carriers flow through the traps density and the small-signal response of Field-Effect Transistors to describe the photoconductivity and the drain current in external circuit. The effect of the carriers relaxation time, the excited wavelength and the channel plasma modes on photoexcited FETs behavior is investigated. This leads to the possibilities of increasing the photoconductive contribution in total current by coupling both the microwave and optical FET proprieties. Small-signal response Elsevier Optical wavelength Elsevier teraHertz frequency (THz) Elsevier Field-Effect Transistor Elsevier Photoconductive parameters Elsevier Mahi, Fatima Zohra oth Mahi, AbdelHamid oth Varani, Luca oth Enthalten in Niu, Zhenzhen ELSEVIER Effect of hawthorn seed extract on the gastrointestinal function of rats with diabetic gastroparesis 2020 Amsterdam (DE-627)ELV004103645 volume:451 year:2019 day:15 month:11 pages:281-285 extent:5 https://doi.org/10.1016/j.optcom.2019.06.039 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U FID-AFRIKA FID-BIODIV 42.38 Botanik: Allgemeines VZ AR 451 2019 15 1115 281-285 5 |
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10.1016/j.optcom.2019.06.039 doi GBV00000000000712.pica (DE-627)ELV047540540 (ELSEVIER)S0030-4018(19)30549-8 DE-627 ger DE-627 rakwb eng 580 VZ AFRIKA DE-30 fid BIODIV DE-30 fid 42.38 bkl Bouzidi, Bellal verfasserin aut Photoconductive response of a Field-Effect Transistor through the traps effect 2019transfer abstract 5 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier In this paper, the photoconductive parameters of Field-Effect Transistors (FETs) excited by high-frequency optical source is studied. The FETs plasma oscillations dominated in the Terahertz (THz) range demonstrates their important effect related to THz emission and detection at room temperature. The study taking into account the plasma modes of FETs which can be coupled with photoexcitation optical pulse. Particularly, the model using the excess carriers flow through the traps density and the small-signal response of Field-Effect Transistors to describe the photoconductivity and the drain current in external circuit. The effect of the carriers relaxation time, the excited wavelength and the channel plasma modes on photoexcited FETs behavior is investigated. This leads to the possibilities of increasing the photoconductive contribution in total current by coupling both the microwave and optical FET proprieties. In this paper, the photoconductive parameters of Field-Effect Transistors (FETs) excited by high-frequency optical source is studied. The FETs plasma oscillations dominated in the Terahertz (THz) range demonstrates their important effect related to THz emission and detection at room temperature. The study taking into account the plasma modes of FETs which can be coupled with photoexcitation optical pulse. Particularly, the model using the excess carriers flow through the traps density and the small-signal response of Field-Effect Transistors to describe the photoconductivity and the drain current in external circuit. The effect of the carriers relaxation time, the excited wavelength and the channel plasma modes on photoexcited FETs behavior is investigated. This leads to the possibilities of increasing the photoconductive contribution in total current by coupling both the microwave and optical FET proprieties. Small-signal response Elsevier Optical wavelength Elsevier teraHertz frequency (THz) Elsevier Field-Effect Transistor Elsevier Photoconductive parameters Elsevier Mahi, Fatima Zohra oth Mahi, AbdelHamid oth Varani, Luca oth Enthalten in Niu, Zhenzhen ELSEVIER Effect of hawthorn seed extract on the gastrointestinal function of rats with diabetic gastroparesis 2020 Amsterdam (DE-627)ELV004103645 volume:451 year:2019 day:15 month:11 pages:281-285 extent:5 https://doi.org/10.1016/j.optcom.2019.06.039 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U FID-AFRIKA FID-BIODIV 42.38 Botanik: Allgemeines VZ AR 451 2019 15 1115 281-285 5 |
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Effect of hawthorn seed extract on the gastrointestinal function of rats with diabetic gastroparesis |
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| author |
Bouzidi, Bellal |
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580 VZ AFRIKA DE-30 fid BIODIV DE-30 fid 42.38 bkl Photoconductive response of a Field-Effect Transistor through the traps effect Small-signal response Elsevier Optical wavelength Elsevier teraHertz frequency (THz) Elsevier Field-Effect Transistor Elsevier Photoconductive parameters Elsevier |
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ddc 580 fid AFRIKA fid BIODIV bkl 42.38 Elsevier Small-signal response Elsevier Optical wavelength Elsevier teraHertz frequency (THz) Elsevier Field-Effect Transistor Elsevier Photoconductive parameters |
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ddc 580 fid AFRIKA fid BIODIV bkl 42.38 Elsevier Small-signal response Elsevier Optical wavelength Elsevier teraHertz frequency (THz) Elsevier Field-Effect Transistor Elsevier Photoconductive parameters |
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Effect of hawthorn seed extract on the gastrointestinal function of rats with diabetic gastroparesis |
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Effect of hawthorn seed extract on the gastrointestinal function of rats with diabetic gastroparesis |
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Photoconductive response of a Field-Effect Transistor through the traps effect |
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Photoconductive response of a Field-Effect Transistor through the traps effect |
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Effect of hawthorn seed extract on the gastrointestinal function of rats with diabetic gastroparesis |
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Effect of hawthorn seed extract on the gastrointestinal function of rats with diabetic gastroparesis |
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10.1016/j.optcom.2019.06.039 |
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photoconductive response of a field-effect transistor through the traps effect |
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Photoconductive response of a Field-Effect Transistor through the traps effect |
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In this paper, the photoconductive parameters of Field-Effect Transistors (FETs) excited by high-frequency optical source is studied. The FETs plasma oscillations dominated in the Terahertz (THz) range demonstrates their important effect related to THz emission and detection at room temperature. The study taking into account the plasma modes of FETs which can be coupled with photoexcitation optical pulse. Particularly, the model using the excess carriers flow through the traps density and the small-signal response of Field-Effect Transistors to describe the photoconductivity and the drain current in external circuit. The effect of the carriers relaxation time, the excited wavelength and the channel plasma modes on photoexcited FETs behavior is investigated. This leads to the possibilities of increasing the photoconductive contribution in total current by coupling both the microwave and optical FET proprieties. |
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In this paper, the photoconductive parameters of Field-Effect Transistors (FETs) excited by high-frequency optical source is studied. The FETs plasma oscillations dominated in the Terahertz (THz) range demonstrates their important effect related to THz emission and detection at room temperature. The study taking into account the plasma modes of FETs which can be coupled with photoexcitation optical pulse. Particularly, the model using the excess carriers flow through the traps density and the small-signal response of Field-Effect Transistors to describe the photoconductivity and the drain current in external circuit. The effect of the carriers relaxation time, the excited wavelength and the channel plasma modes on photoexcited FETs behavior is investigated. This leads to the possibilities of increasing the photoconductive contribution in total current by coupling both the microwave and optical FET proprieties. |
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In this paper, the photoconductive parameters of Field-Effect Transistors (FETs) excited by high-frequency optical source is studied. The FETs plasma oscillations dominated in the Terahertz (THz) range demonstrates their important effect related to THz emission and detection at room temperature. The study taking into account the plasma modes of FETs which can be coupled with photoexcitation optical pulse. Particularly, the model using the excess carriers flow through the traps density and the small-signal response of Field-Effect Transistors to describe the photoconductivity and the drain current in external circuit. The effect of the carriers relaxation time, the excited wavelength and the channel plasma modes on photoexcited FETs behavior is investigated. This leads to the possibilities of increasing the photoconductive contribution in total current by coupling both the microwave and optical FET proprieties. |
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Photoconductive response of a Field-Effect Transistor through the traps effect |
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Mahi, Fatima Zohra Mahi, AbdelHamid Varani, Luca |
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