Investigation of the distribution of deep levels in 4H-SiC epitaxial wafer by DLTS with the method of decussate sampling
• Z1/2 defect typically exist in n-type 4H-SiC epitaxial layer. • Defect concentration uniformity of the epilayer is 5.74%. • Z1/2 defect is uniformly distributed in 4-inch n-type 4H-SiC epitaxial layer. • Ti center did not appear at the temperature range from 80 K to 500 K.
Gespeichert in:
| Autor*in: |
He, Yawei [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
2020 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting - 2011, Amsterdam [u.a.] |
|---|---|
| Übergeordnetes Werk: |
volume:531 ; year:2020 ; day:1 ; month:02 ; pages:0 |
| Links: |
|---|
| DOI / URN: |
10.1016/j.jcrysgro.2019.125352 |
|---|
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ELV048878685 |
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| 520 | |a • Z1/2 defect typically exist in n-type 4H-SiC epitaxial layer. • Defect concentration uniformity of the epilayer is 5.74%. • Z1/2 defect is uniformly distributed in 4-inch n-type 4H-SiC epitaxial layer. • Ti center did not appear at the temperature range from 80 K to 500 K. | ||
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10.1016/j.jcrysgro.2019.125352 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001138.pica (DE-627)ELV048878685 (ELSEVIER)S0022-0248(19)30567-6 DE-627 ger DE-627 rakwb eng 610 VZ 570 540 VZ He, Yawei verfasserin aut Investigation of the distribution of deep levels in 4H-SiC epitaxial wafer by DLTS with the method of decussate sampling 2020 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier • Z1/2 defect typically exist in n-type 4H-SiC epitaxial layer. • Defect concentration uniformity of the epilayer is 5.74%. • Z1/2 defect is uniformly distributed in 4-inch n-type 4H-SiC epitaxial layer. • Ti center did not appear at the temperature range from 80 K to 500 K. Defect concentration Elsevier DLTS Elsevier 4H-SiC Elsevier Deep level Elsevier Yan, Guoguo oth Shen, Zhanwei oth Zhao, Wanshun oth Wang, Lei oth Liu, Xingfang oth Sun, Guosheng oth Zhang, Feng oth Zeng, Yiping oth Enthalten in Elsevier The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting 2011 Amsterdam [u.a.] (DE-627)ELV010662650 volume:531 year:2020 day:1 month:02 pages:0 https://doi.org/10.1016/j.jcrysgro.2019.125352 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_22 GBV_ILN_40 GBV_ILN_105 AR 531 2020 1 0201 0 |
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10.1016/j.jcrysgro.2019.125352 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001138.pica (DE-627)ELV048878685 (ELSEVIER)S0022-0248(19)30567-6 DE-627 ger DE-627 rakwb eng 610 VZ 570 540 VZ He, Yawei verfasserin aut Investigation of the distribution of deep levels in 4H-SiC epitaxial wafer by DLTS with the method of decussate sampling 2020 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier • Z1/2 defect typically exist in n-type 4H-SiC epitaxial layer. • Defect concentration uniformity of the epilayer is 5.74%. • Z1/2 defect is uniformly distributed in 4-inch n-type 4H-SiC epitaxial layer. • Ti center did not appear at the temperature range from 80 K to 500 K. Defect concentration Elsevier DLTS Elsevier 4H-SiC Elsevier Deep level Elsevier Yan, Guoguo oth Shen, Zhanwei oth Zhao, Wanshun oth Wang, Lei oth Liu, Xingfang oth Sun, Guosheng oth Zhang, Feng oth Zeng, Yiping oth Enthalten in Elsevier The mental health of doctor-shoppers: Experience from a patient-led fee-for-service primary care setting 2011 Amsterdam [u.a.] (DE-627)ELV010662650 volume:531 year:2020 day:1 month:02 pages:0 https://doi.org/10.1016/j.jcrysgro.2019.125352 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_22 GBV_ILN_40 GBV_ILN_105 AR 531 2020 1 0201 0 |
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Investigation of the distribution of deep levels in 4H-SiC epitaxial wafer by DLTS with the method of decussate sampling |
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• Z1/2 defect typically exist in n-type 4H-SiC epitaxial layer. • Defect concentration uniformity of the epilayer is 5.74%. • Z1/2 defect is uniformly distributed in 4-inch n-type 4H-SiC epitaxial layer. • Ti center did not appear at the temperature range from 80 K to 500 K. |
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• Z1/2 defect typically exist in n-type 4H-SiC epitaxial layer. • Defect concentration uniformity of the epilayer is 5.74%. • Z1/2 defect is uniformly distributed in 4-inch n-type 4H-SiC epitaxial layer. • Ti center did not appear at the temperature range from 80 K to 500 K. |
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• Z1/2 defect typically exist in n-type 4H-SiC epitaxial layer. • Defect concentration uniformity of the epilayer is 5.74%. • Z1/2 defect is uniformly distributed in 4-inch n-type 4H-SiC epitaxial layer. • Ti center did not appear at the temperature range from 80 K to 500 K. |
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10.1016/j.jcrysgro.2019.125352 |
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2024-07-06T20:02:30.362Z |
| _version_ |
1803861256163033088 |
| fullrecord_marcxml |
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