MgO-TbFeCo interface enhancement of TbFeCo-based perpendicular magnetic tunnel junctions
We study the effect of inserting Fe and FeCo thin layers between the MgO and the magnetic layer in the TbFeCo-based perpendicular magnetic tunnel junction (pMTJ). Different half and full structure MTJ were prepared and thin layers of Fe and FeCo were inserted between the MgO-TbFeCo interface. It is...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Bhatt, Ramesh Chandra [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2020transfer abstract |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Modular auditory decision-making behavioral task designed for intraoperative use in humans - Tekriwal, Anand ELSEVIER, 2018, MMM, Amsterdam |
|---|---|
| Übergeordnetes Werk: |
volume:498 ; year:2020 ; day:15 ; month:03 ; pages:0 |
| Links: |
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| DOI / URN: |
10.1016/j.jmmm.2019.166159 |
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ELV048955779 |
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| 245 | 1 | 0 | |a MgO-TbFeCo interface enhancement of TbFeCo-based perpendicular magnetic tunnel junctions |
| 264 | 1 | |c 2020transfer abstract | |
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| 520 | |a We study the effect of inserting Fe and FeCo thin layers between the MgO and the magnetic layer in the TbFeCo-based perpendicular magnetic tunnel junction (pMTJ). Different half and full structure MTJ were prepared and thin layers of Fe and FeCo were inserted between the MgO-TbFeCo interface. It is observed that in both the reference and free layer half structures, the coercivity decreases on inserting Fe or FeCo thin layer. In magnetic tunnel junction full structure, the minor and major loop coercivities increase with FeCo insertion. The transmission electron microscope images of magnetic tunnel junctions show the MgO interface becomes smoother with FeCo-insertion. The difference in the half and full structure magnetic properties attribute to the FeCo crystal orientation. Both the Fe and FeCo insertion gives large coercivity to the MTJ free and reference layers and made the MgO-TbFeCo interface smoother. The magnetic annealing of MTJs shows an advantage over the zero-field annealing. The magnetic annealing up to 250 °C improves the squareness of the MTJ’s. This study suggests that the Fe/FeCo thin layer insertion to the TbFeCo-based MTJ will be useful in the fabrication of high performance magnetic random-access memories. | ||
| 520 | |a We study the effect of inserting Fe and FeCo thin layers between the MgO and the magnetic layer in the TbFeCo-based perpendicular magnetic tunnel junction (pMTJ). Different half and full structure MTJ were prepared and thin layers of Fe and FeCo were inserted between the MgO-TbFeCo interface. It is observed that in both the reference and free layer half structures, the coercivity decreases on inserting Fe or FeCo thin layer. In magnetic tunnel junction full structure, the minor and major loop coercivities increase with FeCo insertion. The transmission electron microscope images of magnetic tunnel junctions show the MgO interface becomes smoother with FeCo-insertion. The difference in the half and full structure magnetic properties attribute to the FeCo crystal orientation. Both the Fe and FeCo insertion gives large coercivity to the MTJ free and reference layers and made the MgO-TbFeCo interface smoother. The magnetic annealing of MTJs shows an advantage over the zero-field annealing. The magnetic annealing up to 250 °C improves the squareness of the MTJ’s. This study suggests that the Fe/FeCo thin layer insertion to the TbFeCo-based MTJ will be useful in the fabrication of high performance magnetic random-access memories. | ||
| 650 | 7 | |a MgO-interface |2 Elsevier | |
| 650 | 7 | |a Perpendicular magnetic anisotropy: magnetic annealing |2 Elsevier | |
| 650 | 7 | |a Magnetic tunnel junction |2 Elsevier | |
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| 700 | 1 | |a Wu, Te-ho |4 oth | |
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10.1016/j.jmmm.2019.166159 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000000859.pica (DE-627)ELV048955779 (ELSEVIER)S0304-8853(19)33772-2 DE-627 ger DE-627 rakwb eng 610 VZ 44.90 bkl Bhatt, Ramesh Chandra verfasserin aut MgO-TbFeCo interface enhancement of TbFeCo-based perpendicular magnetic tunnel junctions 2020transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier We study the effect of inserting Fe and FeCo thin layers between the MgO and the magnetic layer in the TbFeCo-based perpendicular magnetic tunnel junction (pMTJ). Different half and full structure MTJ were prepared and thin layers of Fe and FeCo were inserted between the MgO-TbFeCo interface. It is observed that in both the reference and free layer half structures, the coercivity decreases on inserting Fe or FeCo thin layer. In magnetic tunnel junction full structure, the minor and major loop coercivities increase with FeCo insertion. The transmission electron microscope images of magnetic tunnel junctions show the MgO interface becomes smoother with FeCo-insertion. The difference in the half and full structure magnetic properties attribute to the FeCo crystal orientation. Both the Fe and FeCo insertion gives large coercivity to the MTJ free and reference layers and made the MgO-TbFeCo interface smoother. The magnetic annealing of MTJs shows an advantage over the zero-field annealing. The magnetic annealing up to 250 °C improves the squareness of the MTJ’s. This study suggests that the Fe/FeCo thin layer insertion to the TbFeCo-based MTJ will be useful in the fabrication of high performance magnetic random-access memories. We study the effect of inserting Fe and FeCo thin layers between the MgO and the magnetic layer in the TbFeCo-based perpendicular magnetic tunnel junction (pMTJ). Different half and full structure MTJ were prepared and thin layers of Fe and FeCo were inserted between the MgO-TbFeCo interface. It is observed that in both the reference and free layer half structures, the coercivity decreases on inserting Fe or FeCo thin layer. In magnetic tunnel junction full structure, the minor and major loop coercivities increase with FeCo insertion. The transmission electron microscope images of magnetic tunnel junctions show the MgO interface becomes smoother with FeCo-insertion. The difference in the half and full structure magnetic properties attribute to the FeCo crystal orientation. Both the Fe and FeCo insertion gives large coercivity to the MTJ free and reference layers and made the MgO-TbFeCo interface smoother. The magnetic annealing of MTJs shows an advantage over the zero-field annealing. The magnetic annealing up to 250 °C improves the squareness of the MTJ’s. This study suggests that the Fe/FeCo thin layer insertion to the TbFeCo-based MTJ will be useful in the fabrication of high performance magnetic random-access memories. MgO-interface Elsevier Perpendicular magnetic anisotropy: magnetic annealing Elsevier Magnetic tunnel junction Elsevier Ye, Lin-Xiu oth Wu, Te-ho oth Enthalten in North-Holland Publ. Co Tekriwal, Anand ELSEVIER Modular auditory decision-making behavioral task designed for intraoperative use in humans 2018 MMM Amsterdam (DE-627)ELV002407426 volume:498 year:2020 day:15 month:03 pages:0 https://doi.org/10.1016/j.jmmm.2019.166159 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 44.90 Neurologie VZ AR 498 2020 15 0315 0 |
| spelling |
10.1016/j.jmmm.2019.166159 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000000859.pica (DE-627)ELV048955779 (ELSEVIER)S0304-8853(19)33772-2 DE-627 ger DE-627 rakwb eng 610 VZ 44.90 bkl Bhatt, Ramesh Chandra verfasserin aut MgO-TbFeCo interface enhancement of TbFeCo-based perpendicular magnetic tunnel junctions 2020transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier We study the effect of inserting Fe and FeCo thin layers between the MgO and the magnetic layer in the TbFeCo-based perpendicular magnetic tunnel junction (pMTJ). Different half and full structure MTJ were prepared and thin layers of Fe and FeCo were inserted between the MgO-TbFeCo interface. It is observed that in both the reference and free layer half structures, the coercivity decreases on inserting Fe or FeCo thin layer. In magnetic tunnel junction full structure, the minor and major loop coercivities increase with FeCo insertion. The transmission electron microscope images of magnetic tunnel junctions show the MgO interface becomes smoother with FeCo-insertion. The difference in the half and full structure magnetic properties attribute to the FeCo crystal orientation. Both the Fe and FeCo insertion gives large coercivity to the MTJ free and reference layers and made the MgO-TbFeCo interface smoother. The magnetic annealing of MTJs shows an advantage over the zero-field annealing. The magnetic annealing up to 250 °C improves the squareness of the MTJ’s. This study suggests that the Fe/FeCo thin layer insertion to the TbFeCo-based MTJ will be useful in the fabrication of high performance magnetic random-access memories. We study the effect of inserting Fe and FeCo thin layers between the MgO and the magnetic layer in the TbFeCo-based perpendicular magnetic tunnel junction (pMTJ). Different half and full structure MTJ were prepared and thin layers of Fe and FeCo were inserted between the MgO-TbFeCo interface. It is observed that in both the reference and free layer half structures, the coercivity decreases on inserting Fe or FeCo thin layer. In magnetic tunnel junction full structure, the minor and major loop coercivities increase with FeCo insertion. The transmission electron microscope images of magnetic tunnel junctions show the MgO interface becomes smoother with FeCo-insertion. The difference in the half and full structure magnetic properties attribute to the FeCo crystal orientation. Both the Fe and FeCo insertion gives large coercivity to the MTJ free and reference layers and made the MgO-TbFeCo interface smoother. The magnetic annealing of MTJs shows an advantage over the zero-field annealing. The magnetic annealing up to 250 °C improves the squareness of the MTJ’s. This study suggests that the Fe/FeCo thin layer insertion to the TbFeCo-based MTJ will be useful in the fabrication of high performance magnetic random-access memories. MgO-interface Elsevier Perpendicular magnetic anisotropy: magnetic annealing Elsevier Magnetic tunnel junction Elsevier Ye, Lin-Xiu oth Wu, Te-ho oth Enthalten in North-Holland Publ. Co Tekriwal, Anand ELSEVIER Modular auditory decision-making behavioral task designed for intraoperative use in humans 2018 MMM Amsterdam (DE-627)ELV002407426 volume:498 year:2020 day:15 month:03 pages:0 https://doi.org/10.1016/j.jmmm.2019.166159 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 44.90 Neurologie VZ AR 498 2020 15 0315 0 |
| allfields_unstemmed |
10.1016/j.jmmm.2019.166159 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000000859.pica (DE-627)ELV048955779 (ELSEVIER)S0304-8853(19)33772-2 DE-627 ger DE-627 rakwb eng 610 VZ 44.90 bkl Bhatt, Ramesh Chandra verfasserin aut MgO-TbFeCo interface enhancement of TbFeCo-based perpendicular magnetic tunnel junctions 2020transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier We study the effect of inserting Fe and FeCo thin layers between the MgO and the magnetic layer in the TbFeCo-based perpendicular magnetic tunnel junction (pMTJ). Different half and full structure MTJ were prepared and thin layers of Fe and FeCo were inserted between the MgO-TbFeCo interface. It is observed that in both the reference and free layer half structures, the coercivity decreases on inserting Fe or FeCo thin layer. In magnetic tunnel junction full structure, the minor and major loop coercivities increase with FeCo insertion. The transmission electron microscope images of magnetic tunnel junctions show the MgO interface becomes smoother with FeCo-insertion. The difference in the half and full structure magnetic properties attribute to the FeCo crystal orientation. Both the Fe and FeCo insertion gives large coercivity to the MTJ free and reference layers and made the MgO-TbFeCo interface smoother. The magnetic annealing of MTJs shows an advantage over the zero-field annealing. The magnetic annealing up to 250 °C improves the squareness of the MTJ’s. This study suggests that the Fe/FeCo thin layer insertion to the TbFeCo-based MTJ will be useful in the fabrication of high performance magnetic random-access memories. We study the effect of inserting Fe and FeCo thin layers between the MgO and the magnetic layer in the TbFeCo-based perpendicular magnetic tunnel junction (pMTJ). Different half and full structure MTJ were prepared and thin layers of Fe and FeCo were inserted between the MgO-TbFeCo interface. It is observed that in both the reference and free layer half structures, the coercivity decreases on inserting Fe or FeCo thin layer. In magnetic tunnel junction full structure, the minor and major loop coercivities increase with FeCo insertion. The transmission electron microscope images of magnetic tunnel junctions show the MgO interface becomes smoother with FeCo-insertion. The difference in the half and full structure magnetic properties attribute to the FeCo crystal orientation. Both the Fe and FeCo insertion gives large coercivity to the MTJ free and reference layers and made the MgO-TbFeCo interface smoother. The magnetic annealing of MTJs shows an advantage over the zero-field annealing. The magnetic annealing up to 250 °C improves the squareness of the MTJ’s. This study suggests that the Fe/FeCo thin layer insertion to the TbFeCo-based MTJ will be useful in the fabrication of high performance magnetic random-access memories. MgO-interface Elsevier Perpendicular magnetic anisotropy: magnetic annealing Elsevier Magnetic tunnel junction Elsevier Ye, Lin-Xiu oth Wu, Te-ho oth Enthalten in North-Holland Publ. Co Tekriwal, Anand ELSEVIER Modular auditory decision-making behavioral task designed for intraoperative use in humans 2018 MMM Amsterdam (DE-627)ELV002407426 volume:498 year:2020 day:15 month:03 pages:0 https://doi.org/10.1016/j.jmmm.2019.166159 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 44.90 Neurologie VZ AR 498 2020 15 0315 0 |
| allfieldsGer |
10.1016/j.jmmm.2019.166159 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000000859.pica (DE-627)ELV048955779 (ELSEVIER)S0304-8853(19)33772-2 DE-627 ger DE-627 rakwb eng 610 VZ 44.90 bkl Bhatt, Ramesh Chandra verfasserin aut MgO-TbFeCo interface enhancement of TbFeCo-based perpendicular magnetic tunnel junctions 2020transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier We study the effect of inserting Fe and FeCo thin layers between the MgO and the magnetic layer in the TbFeCo-based perpendicular magnetic tunnel junction (pMTJ). Different half and full structure MTJ were prepared and thin layers of Fe and FeCo were inserted between the MgO-TbFeCo interface. It is observed that in both the reference and free layer half structures, the coercivity decreases on inserting Fe or FeCo thin layer. In magnetic tunnel junction full structure, the minor and major loop coercivities increase with FeCo insertion. The transmission electron microscope images of magnetic tunnel junctions show the MgO interface becomes smoother with FeCo-insertion. The difference in the half and full structure magnetic properties attribute to the FeCo crystal orientation. Both the Fe and FeCo insertion gives large coercivity to the MTJ free and reference layers and made the MgO-TbFeCo interface smoother. The magnetic annealing of MTJs shows an advantage over the zero-field annealing. The magnetic annealing up to 250 °C improves the squareness of the MTJ’s. This study suggests that the Fe/FeCo thin layer insertion to the TbFeCo-based MTJ will be useful in the fabrication of high performance magnetic random-access memories. We study the effect of inserting Fe and FeCo thin layers between the MgO and the magnetic layer in the TbFeCo-based perpendicular magnetic tunnel junction (pMTJ). Different half and full structure MTJ were prepared and thin layers of Fe and FeCo were inserted between the MgO-TbFeCo interface. It is observed that in both the reference and free layer half structures, the coercivity decreases on inserting Fe or FeCo thin layer. In magnetic tunnel junction full structure, the minor and major loop coercivities increase with FeCo insertion. The transmission electron microscope images of magnetic tunnel junctions show the MgO interface becomes smoother with FeCo-insertion. The difference in the half and full structure magnetic properties attribute to the FeCo crystal orientation. Both the Fe and FeCo insertion gives large coercivity to the MTJ free and reference layers and made the MgO-TbFeCo interface smoother. The magnetic annealing of MTJs shows an advantage over the zero-field annealing. The magnetic annealing up to 250 °C improves the squareness of the MTJ’s. This study suggests that the Fe/FeCo thin layer insertion to the TbFeCo-based MTJ will be useful in the fabrication of high performance magnetic random-access memories. MgO-interface Elsevier Perpendicular magnetic anisotropy: magnetic annealing Elsevier Magnetic tunnel junction Elsevier Ye, Lin-Xiu oth Wu, Te-ho oth Enthalten in North-Holland Publ. Co Tekriwal, Anand ELSEVIER Modular auditory decision-making behavioral task designed for intraoperative use in humans 2018 MMM Amsterdam (DE-627)ELV002407426 volume:498 year:2020 day:15 month:03 pages:0 https://doi.org/10.1016/j.jmmm.2019.166159 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 44.90 Neurologie VZ AR 498 2020 15 0315 0 |
| allfieldsSound |
10.1016/j.jmmm.2019.166159 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000000859.pica (DE-627)ELV048955779 (ELSEVIER)S0304-8853(19)33772-2 DE-627 ger DE-627 rakwb eng 610 VZ 44.90 bkl Bhatt, Ramesh Chandra verfasserin aut MgO-TbFeCo interface enhancement of TbFeCo-based perpendicular magnetic tunnel junctions 2020transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier We study the effect of inserting Fe and FeCo thin layers between the MgO and the magnetic layer in the TbFeCo-based perpendicular magnetic tunnel junction (pMTJ). Different half and full structure MTJ were prepared and thin layers of Fe and FeCo were inserted between the MgO-TbFeCo interface. It is observed that in both the reference and free layer half structures, the coercivity decreases on inserting Fe or FeCo thin layer. In magnetic tunnel junction full structure, the minor and major loop coercivities increase with FeCo insertion. The transmission electron microscope images of magnetic tunnel junctions show the MgO interface becomes smoother with FeCo-insertion. The difference in the half and full structure magnetic properties attribute to the FeCo crystal orientation. Both the Fe and FeCo insertion gives large coercivity to the MTJ free and reference layers and made the MgO-TbFeCo interface smoother. The magnetic annealing of MTJs shows an advantage over the zero-field annealing. The magnetic annealing up to 250 °C improves the squareness of the MTJ’s. This study suggests that the Fe/FeCo thin layer insertion to the TbFeCo-based MTJ will be useful in the fabrication of high performance magnetic random-access memories. We study the effect of inserting Fe and FeCo thin layers between the MgO and the magnetic layer in the TbFeCo-based perpendicular magnetic tunnel junction (pMTJ). Different half and full structure MTJ were prepared and thin layers of Fe and FeCo were inserted between the MgO-TbFeCo interface. It is observed that in both the reference and free layer half structures, the coercivity decreases on inserting Fe or FeCo thin layer. In magnetic tunnel junction full structure, the minor and major loop coercivities increase with FeCo insertion. The transmission electron microscope images of magnetic tunnel junctions show the MgO interface becomes smoother with FeCo-insertion. The difference in the half and full structure magnetic properties attribute to the FeCo crystal orientation. Both the Fe and FeCo insertion gives large coercivity to the MTJ free and reference layers and made the MgO-TbFeCo interface smoother. The magnetic annealing of MTJs shows an advantage over the zero-field annealing. The magnetic annealing up to 250 °C improves the squareness of the MTJ’s. This study suggests that the Fe/FeCo thin layer insertion to the TbFeCo-based MTJ will be useful in the fabrication of high performance magnetic random-access memories. MgO-interface Elsevier Perpendicular magnetic anisotropy: magnetic annealing Elsevier Magnetic tunnel junction Elsevier Ye, Lin-Xiu oth Wu, Te-ho oth Enthalten in North-Holland Publ. Co Tekriwal, Anand ELSEVIER Modular auditory decision-making behavioral task designed for intraoperative use in humans 2018 MMM Amsterdam (DE-627)ELV002407426 volume:498 year:2020 day:15 month:03 pages:0 https://doi.org/10.1016/j.jmmm.2019.166159 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 44.90 Neurologie VZ AR 498 2020 15 0315 0 |
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Enthalten in Modular auditory decision-making behavioral task designed for intraoperative use in humans Amsterdam volume:498 year:2020 day:15 month:03 pages:0 |
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Modular auditory decision-making behavioral task designed for intraoperative use in humans |
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Different half and full structure MTJ were prepared and thin layers of Fe and FeCo were inserted between the MgO-TbFeCo interface. It is observed that in both the reference and free layer half structures, the coercivity decreases on inserting Fe or FeCo thin layer. In magnetic tunnel junction full structure, the minor and major loop coercivities increase with FeCo insertion. The transmission electron microscope images of magnetic tunnel junctions show the MgO interface becomes smoother with FeCo-insertion. The difference in the half and full structure magnetic properties attribute to the FeCo crystal orientation. Both the Fe and FeCo insertion gives large coercivity to the MTJ free and reference layers and made the MgO-TbFeCo interface smoother. The magnetic annealing of MTJs shows an advantage over the zero-field annealing. The magnetic annealing up to 250 °C improves the squareness of the MTJ’s. 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MgO-TbFeCo interface enhancement of TbFeCo-based perpendicular magnetic tunnel junctions |
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Modular auditory decision-making behavioral task designed for intraoperative use in humans |
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mgo-tbfeco interface enhancement of tbfeco-based perpendicular magnetic tunnel junctions |
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MgO-TbFeCo interface enhancement of TbFeCo-based perpendicular magnetic tunnel junctions |
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We study the effect of inserting Fe and FeCo thin layers between the MgO and the magnetic layer in the TbFeCo-based perpendicular magnetic tunnel junction (pMTJ). Different half and full structure MTJ were prepared and thin layers of Fe and FeCo were inserted between the MgO-TbFeCo interface. It is observed that in both the reference and free layer half structures, the coercivity decreases on inserting Fe or FeCo thin layer. In magnetic tunnel junction full structure, the minor and major loop coercivities increase with FeCo insertion. The transmission electron microscope images of magnetic tunnel junctions show the MgO interface becomes smoother with FeCo-insertion. The difference in the half and full structure magnetic properties attribute to the FeCo crystal orientation. Both the Fe and FeCo insertion gives large coercivity to the MTJ free and reference layers and made the MgO-TbFeCo interface smoother. The magnetic annealing of MTJs shows an advantage over the zero-field annealing. The magnetic annealing up to 250 °C improves the squareness of the MTJ’s. This study suggests that the Fe/FeCo thin layer insertion to the TbFeCo-based MTJ will be useful in the fabrication of high performance magnetic random-access memories. |
| abstractGer |
We study the effect of inserting Fe and FeCo thin layers between the MgO and the magnetic layer in the TbFeCo-based perpendicular magnetic tunnel junction (pMTJ). Different half and full structure MTJ were prepared and thin layers of Fe and FeCo were inserted between the MgO-TbFeCo interface. It is observed that in both the reference and free layer half structures, the coercivity decreases on inserting Fe or FeCo thin layer. In magnetic tunnel junction full structure, the minor and major loop coercivities increase with FeCo insertion. The transmission electron microscope images of magnetic tunnel junctions show the MgO interface becomes smoother with FeCo-insertion. The difference in the half and full structure magnetic properties attribute to the FeCo crystal orientation. Both the Fe and FeCo insertion gives large coercivity to the MTJ free and reference layers and made the MgO-TbFeCo interface smoother. The magnetic annealing of MTJs shows an advantage over the zero-field annealing. The magnetic annealing up to 250 °C improves the squareness of the MTJ’s. This study suggests that the Fe/FeCo thin layer insertion to the TbFeCo-based MTJ will be useful in the fabrication of high performance magnetic random-access memories. |
| abstract_unstemmed |
We study the effect of inserting Fe and FeCo thin layers between the MgO and the magnetic layer in the TbFeCo-based perpendicular magnetic tunnel junction (pMTJ). Different half and full structure MTJ were prepared and thin layers of Fe and FeCo were inserted between the MgO-TbFeCo interface. It is observed that in both the reference and free layer half structures, the coercivity decreases on inserting Fe or FeCo thin layer. In magnetic tunnel junction full structure, the minor and major loop coercivities increase with FeCo insertion. The transmission electron microscope images of magnetic tunnel junctions show the MgO interface becomes smoother with FeCo-insertion. The difference in the half and full structure magnetic properties attribute to the FeCo crystal orientation. Both the Fe and FeCo insertion gives large coercivity to the MTJ free and reference layers and made the MgO-TbFeCo interface smoother. The magnetic annealing of MTJs shows an advantage over the zero-field annealing. The magnetic annealing up to 250 °C improves the squareness of the MTJ’s. This study suggests that the Fe/FeCo thin layer insertion to the TbFeCo-based MTJ will be useful in the fabrication of high performance magnetic random-access memories. |
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MgO-TbFeCo interface enhancement of TbFeCo-based perpendicular magnetic tunnel junctions |
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https://doi.org/10.1016/j.jmmm.2019.166159 |
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Ye, Lin-Xiu Wu, Te-ho |
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