Impact of Urbach energy on open-circuit voltage deficit of thin-film solar cells
Correlation between Urbach energy (E U) and open-circuit voltage deficit (V OC,def ) among conventional as well as emerging thin-film solar cells, i.e. Cu(In,Ga)Se2 (CIGSe), Cu(In,Ga)(S,Se)2 (CIGSSe), Cu2SnS3 (CTS), Cu2Sn1-xGexS3 (CTGS), SnS, Cu2ZnSnSxSe4-x (CZTSSe), perovskite (PVK), Cu(In,Ga)S2 (C...
Ausführliche Beschreibung
Autor*in: |
Chantana, Jakapan [verfasserIn] |
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E-Artikel |
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Sprache: |
Englisch |
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2020transfer abstract |
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Übergeordnetes Werk: |
Enthalten in: Question answering method for infrastructure damage information retrieval from textual data using bidirectional encoder representations from transformers - Kim, Yohan ELSEVIER, 2021, an international journal devoted to photovoltaic, photothermal, and photochemical solar energy conversion, Amsterdam [u.a.] |
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volume:210 ; year:2020 ; day:15 ; month:06 ; pages:0 |
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DOI / URN: |
10.1016/j.solmat.2020.110502 |
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Katalog-ID: |
ELV049900129 |
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520 | |a Correlation between Urbach energy (E U) and open-circuit voltage deficit (V OC,def ) among conventional as well as emerging thin-film solar cells, i.e. Cu(In,Ga)Se2 (CIGSe), Cu(In,Ga)(S,Se)2 (CIGSSe), Cu2SnS3 (CTS), Cu2Sn1-xGexS3 (CTGS), SnS, Cu2ZnSnSxSe4-x (CZTSSe), perovskite (PVK), Cu(In,Ga)S2 (CIGS), and CdTe thin-film solar cells, is examined. The E U is estimated from an exponential tail in a long-wavelength edge of an external quantum efficiency. It is determined that the relation between short-circuit current density (J SC) and E U is not clearly shown because the J SC is primarily influenced by the bandgap of the thin-film absorbers. On the other hand, E U demonstrates a close relation with V OC,def , where the reduction of the E U leads to the decrease in the V OC,def , implying that the E U can be used as an indicator of the absorber quality. The E U of over 20 meV, observed in the CIGS, CTS, CTGS, SnS, and CZTSSe solar cells, gives rise to the high V OC,def and the low conversion efficiency (η) values. The E U of below 20 meV, seen in the CIGSe, CIGSSe, PVK, and CdTe solar cells, leads to the low V OC,def and high η values. Ultimately, the thin-film absorbers with the E U values of below 20 meV, which is lower than thermal energy under room temperature, is of vital to realize high photovoltaic performances. | ||
520 | |a Correlation between Urbach energy (E U) and open-circuit voltage deficit (V OC,def ) among conventional as well as emerging thin-film solar cells, i.e. Cu(In,Ga)Se2 (CIGSe), Cu(In,Ga)(S,Se)2 (CIGSSe), Cu2SnS3 (CTS), Cu2Sn1-xGexS3 (CTGS), SnS, Cu2ZnSnSxSe4-x (CZTSSe), perovskite (PVK), Cu(In,Ga)S2 (CIGS), and CdTe thin-film solar cells, is examined. The E U is estimated from an exponential tail in a long-wavelength edge of an external quantum efficiency. It is determined that the relation between short-circuit current density (J SC) and E U is not clearly shown because the J SC is primarily influenced by the bandgap of the thin-film absorbers. On the other hand, E U demonstrates a close relation with V OC,def , where the reduction of the E U leads to the decrease in the V OC,def , implying that the E U can be used as an indicator of the absorber quality. The E U of over 20 meV, observed in the CIGS, CTS, CTGS, SnS, and CZTSSe solar cells, gives rise to the high V OC,def and the low conversion efficiency (η) values. The E U of below 20 meV, seen in the CIGSe, CIGSSe, PVK, and CdTe solar cells, leads to the low V OC,def and high η values. Ultimately, the thin-film absorbers with the E U values of below 20 meV, which is lower than thermal energy under room temperature, is of vital to realize high photovoltaic performances. | ||
650 | 7 | |a Solar cell |2 Elsevier | |
650 | 7 | |a Urbach energy |2 Elsevier | |
650 | 7 | |a Open-circuit voltage deficit |2 Elsevier | |
650 | 7 | |a Thin film |2 Elsevier | |
700 | 1 | |a Kawano, Yu |4 oth | |
700 | 1 | |a Nishimura, Takahito |4 oth | |
700 | 1 | |a Mavlonov, Abdurashid |4 oth | |
700 | 1 | |a Minemoto, Takashi |4 oth | |
773 | 0 | 8 | |i Enthalten in |n NH, Elsevier |a Kim, Yohan ELSEVIER |t Question answering method for infrastructure damage information retrieval from textual data using bidirectional encoder representations from transformers |d 2021 |d an international journal devoted to photovoltaic, photothermal, and photochemical solar energy conversion |g Amsterdam [u.a.] |w (DE-627)ELV00721202X |
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10.1016/j.solmat.2020.110502 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000000984.pica (DE-627)ELV049900129 (ELSEVIER)S0927-0248(20)30107-0 DE-627 ger DE-627 rakwb eng 690 VZ 56.03 bkl Chantana, Jakapan verfasserin aut Impact of Urbach energy on open-circuit voltage deficit of thin-film solar cells 2020transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Correlation between Urbach energy (E U) and open-circuit voltage deficit (V OC,def ) among conventional as well as emerging thin-film solar cells, i.e. Cu(In,Ga)Se2 (CIGSe), Cu(In,Ga)(S,Se)2 (CIGSSe), Cu2SnS3 (CTS), Cu2Sn1-xGexS3 (CTGS), SnS, Cu2ZnSnSxSe4-x (CZTSSe), perovskite (PVK), Cu(In,Ga)S2 (CIGS), and CdTe thin-film solar cells, is examined. The E U is estimated from an exponential tail in a long-wavelength edge of an external quantum efficiency. It is determined that the relation between short-circuit current density (J SC) and E U is not clearly shown because the J SC is primarily influenced by the bandgap of the thin-film absorbers. On the other hand, E U demonstrates a close relation with V OC,def , where the reduction of the E U leads to the decrease in the V OC,def , implying that the E U can be used as an indicator of the absorber quality. The E U of over 20 meV, observed in the CIGS, CTS, CTGS, SnS, and CZTSSe solar cells, gives rise to the high V OC,def and the low conversion efficiency (η) values. The E U of below 20 meV, seen in the CIGSe, CIGSSe, PVK, and CdTe solar cells, leads to the low V OC,def and high η values. Ultimately, the thin-film absorbers with the E U values of below 20 meV, which is lower than thermal energy under room temperature, is of vital to realize high photovoltaic performances. Correlation between Urbach energy (E U) and open-circuit voltage deficit (V OC,def ) among conventional as well as emerging thin-film solar cells, i.e. Cu(In,Ga)Se2 (CIGSe), Cu(In,Ga)(S,Se)2 (CIGSSe), Cu2SnS3 (CTS), Cu2Sn1-xGexS3 (CTGS), SnS, Cu2ZnSnSxSe4-x (CZTSSe), perovskite (PVK), Cu(In,Ga)S2 (CIGS), and CdTe thin-film solar cells, is examined. The E U is estimated from an exponential tail in a long-wavelength edge of an external quantum efficiency. It is determined that the relation between short-circuit current density (J SC) and E U is not clearly shown because the J SC is primarily influenced by the bandgap of the thin-film absorbers. On the other hand, E U demonstrates a close relation with V OC,def , where the reduction of the E U leads to the decrease in the V OC,def , implying that the E U can be used as an indicator of the absorber quality. The E U of over 20 meV, observed in the CIGS, CTS, CTGS, SnS, and CZTSSe solar cells, gives rise to the high V OC,def and the low conversion efficiency (η) values. The E U of below 20 meV, seen in the CIGSe, CIGSSe, PVK, and CdTe solar cells, leads to the low V OC,def and high η values. Ultimately, the thin-film absorbers with the E U values of below 20 meV, which is lower than thermal energy under room temperature, is of vital to realize high photovoltaic performances. Solar cell Elsevier Urbach energy Elsevier Open-circuit voltage deficit Elsevier Thin film Elsevier Kawano, Yu oth Nishimura, Takahito oth Mavlonov, Abdurashid oth Minemoto, Takashi oth Enthalten in NH, Elsevier Kim, Yohan ELSEVIER Question answering method for infrastructure damage information retrieval from textual data using bidirectional encoder representations from transformers 2021 an international journal devoted to photovoltaic, photothermal, and photochemical solar energy conversion Amsterdam [u.a.] (DE-627)ELV00721202X volume:210 year:2020 day:15 month:06 pages:0 https://doi.org/10.1016/j.solmat.2020.110502 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.03 Methoden im Bauingenieurwesen VZ AR 210 2020 15 0615 0 |
spelling |
10.1016/j.solmat.2020.110502 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000000984.pica (DE-627)ELV049900129 (ELSEVIER)S0927-0248(20)30107-0 DE-627 ger DE-627 rakwb eng 690 VZ 56.03 bkl Chantana, Jakapan verfasserin aut Impact of Urbach energy on open-circuit voltage deficit of thin-film solar cells 2020transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Correlation between Urbach energy (E U) and open-circuit voltage deficit (V OC,def ) among conventional as well as emerging thin-film solar cells, i.e. Cu(In,Ga)Se2 (CIGSe), Cu(In,Ga)(S,Se)2 (CIGSSe), Cu2SnS3 (CTS), Cu2Sn1-xGexS3 (CTGS), SnS, Cu2ZnSnSxSe4-x (CZTSSe), perovskite (PVK), Cu(In,Ga)S2 (CIGS), and CdTe thin-film solar cells, is examined. The E U is estimated from an exponential tail in a long-wavelength edge of an external quantum efficiency. It is determined that the relation between short-circuit current density (J SC) and E U is not clearly shown because the J SC is primarily influenced by the bandgap of the thin-film absorbers. On the other hand, E U demonstrates a close relation with V OC,def , where the reduction of the E U leads to the decrease in the V OC,def , implying that the E U can be used as an indicator of the absorber quality. The E U of over 20 meV, observed in the CIGS, CTS, CTGS, SnS, and CZTSSe solar cells, gives rise to the high V OC,def and the low conversion efficiency (η) values. The E U of below 20 meV, seen in the CIGSe, CIGSSe, PVK, and CdTe solar cells, leads to the low V OC,def and high η values. Ultimately, the thin-film absorbers with the E U values of below 20 meV, which is lower than thermal energy under room temperature, is of vital to realize high photovoltaic performances. Correlation between Urbach energy (E U) and open-circuit voltage deficit (V OC,def ) among conventional as well as emerging thin-film solar cells, i.e. Cu(In,Ga)Se2 (CIGSe), Cu(In,Ga)(S,Se)2 (CIGSSe), Cu2SnS3 (CTS), Cu2Sn1-xGexS3 (CTGS), SnS, Cu2ZnSnSxSe4-x (CZTSSe), perovskite (PVK), Cu(In,Ga)S2 (CIGS), and CdTe thin-film solar cells, is examined. The E U is estimated from an exponential tail in a long-wavelength edge of an external quantum efficiency. It is determined that the relation between short-circuit current density (J SC) and E U is not clearly shown because the J SC is primarily influenced by the bandgap of the thin-film absorbers. On the other hand, E U demonstrates a close relation with V OC,def , where the reduction of the E U leads to the decrease in the V OC,def , implying that the E U can be used as an indicator of the absorber quality. The E U of over 20 meV, observed in the CIGS, CTS, CTGS, SnS, and CZTSSe solar cells, gives rise to the high V OC,def and the low conversion efficiency (η) values. The E U of below 20 meV, seen in the CIGSe, CIGSSe, PVK, and CdTe solar cells, leads to the low V OC,def and high η values. Ultimately, the thin-film absorbers with the E U values of below 20 meV, which is lower than thermal energy under room temperature, is of vital to realize high photovoltaic performances. Solar cell Elsevier Urbach energy Elsevier Open-circuit voltage deficit Elsevier Thin film Elsevier Kawano, Yu oth Nishimura, Takahito oth Mavlonov, Abdurashid oth Minemoto, Takashi oth Enthalten in NH, Elsevier Kim, Yohan ELSEVIER Question answering method for infrastructure damage information retrieval from textual data using bidirectional encoder representations from transformers 2021 an international journal devoted to photovoltaic, photothermal, and photochemical solar energy conversion Amsterdam [u.a.] (DE-627)ELV00721202X volume:210 year:2020 day:15 month:06 pages:0 https://doi.org/10.1016/j.solmat.2020.110502 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.03 Methoden im Bauingenieurwesen VZ AR 210 2020 15 0615 0 |
allfields_unstemmed |
10.1016/j.solmat.2020.110502 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000000984.pica (DE-627)ELV049900129 (ELSEVIER)S0927-0248(20)30107-0 DE-627 ger DE-627 rakwb eng 690 VZ 56.03 bkl Chantana, Jakapan verfasserin aut Impact of Urbach energy on open-circuit voltage deficit of thin-film solar cells 2020transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Correlation between Urbach energy (E U) and open-circuit voltage deficit (V OC,def ) among conventional as well as emerging thin-film solar cells, i.e. Cu(In,Ga)Se2 (CIGSe), Cu(In,Ga)(S,Se)2 (CIGSSe), Cu2SnS3 (CTS), Cu2Sn1-xGexS3 (CTGS), SnS, Cu2ZnSnSxSe4-x (CZTSSe), perovskite (PVK), Cu(In,Ga)S2 (CIGS), and CdTe thin-film solar cells, is examined. The E U is estimated from an exponential tail in a long-wavelength edge of an external quantum efficiency. It is determined that the relation between short-circuit current density (J SC) and E U is not clearly shown because the J SC is primarily influenced by the bandgap of the thin-film absorbers. On the other hand, E U demonstrates a close relation with V OC,def , where the reduction of the E U leads to the decrease in the V OC,def , implying that the E U can be used as an indicator of the absorber quality. The E U of over 20 meV, observed in the CIGS, CTS, CTGS, SnS, and CZTSSe solar cells, gives rise to the high V OC,def and the low conversion efficiency (η) values. The E U of below 20 meV, seen in the CIGSe, CIGSSe, PVK, and CdTe solar cells, leads to the low V OC,def and high η values. Ultimately, the thin-film absorbers with the E U values of below 20 meV, which is lower than thermal energy under room temperature, is of vital to realize high photovoltaic performances. Correlation between Urbach energy (E U) and open-circuit voltage deficit (V OC,def ) among conventional as well as emerging thin-film solar cells, i.e. Cu(In,Ga)Se2 (CIGSe), Cu(In,Ga)(S,Se)2 (CIGSSe), Cu2SnS3 (CTS), Cu2Sn1-xGexS3 (CTGS), SnS, Cu2ZnSnSxSe4-x (CZTSSe), perovskite (PVK), Cu(In,Ga)S2 (CIGS), and CdTe thin-film solar cells, is examined. The E U is estimated from an exponential tail in a long-wavelength edge of an external quantum efficiency. It is determined that the relation between short-circuit current density (J SC) and E U is not clearly shown because the J SC is primarily influenced by the bandgap of the thin-film absorbers. On the other hand, E U demonstrates a close relation with V OC,def , where the reduction of the E U leads to the decrease in the V OC,def , implying that the E U can be used as an indicator of the absorber quality. The E U of over 20 meV, observed in the CIGS, CTS, CTGS, SnS, and CZTSSe solar cells, gives rise to the high V OC,def and the low conversion efficiency (η) values. The E U of below 20 meV, seen in the CIGSe, CIGSSe, PVK, and CdTe solar cells, leads to the low V OC,def and high η values. Ultimately, the thin-film absorbers with the E U values of below 20 meV, which is lower than thermal energy under room temperature, is of vital to realize high photovoltaic performances. Solar cell Elsevier Urbach energy Elsevier Open-circuit voltage deficit Elsevier Thin film Elsevier Kawano, Yu oth Nishimura, Takahito oth Mavlonov, Abdurashid oth Minemoto, Takashi oth Enthalten in NH, Elsevier Kim, Yohan ELSEVIER Question answering method for infrastructure damage information retrieval from textual data using bidirectional encoder representations from transformers 2021 an international journal devoted to photovoltaic, photothermal, and photochemical solar energy conversion Amsterdam [u.a.] (DE-627)ELV00721202X volume:210 year:2020 day:15 month:06 pages:0 https://doi.org/10.1016/j.solmat.2020.110502 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.03 Methoden im Bauingenieurwesen VZ AR 210 2020 15 0615 0 |
allfieldsGer |
10.1016/j.solmat.2020.110502 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000000984.pica (DE-627)ELV049900129 (ELSEVIER)S0927-0248(20)30107-0 DE-627 ger DE-627 rakwb eng 690 VZ 56.03 bkl Chantana, Jakapan verfasserin aut Impact of Urbach energy on open-circuit voltage deficit of thin-film solar cells 2020transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Correlation between Urbach energy (E U) and open-circuit voltage deficit (V OC,def ) among conventional as well as emerging thin-film solar cells, i.e. Cu(In,Ga)Se2 (CIGSe), Cu(In,Ga)(S,Se)2 (CIGSSe), Cu2SnS3 (CTS), Cu2Sn1-xGexS3 (CTGS), SnS, Cu2ZnSnSxSe4-x (CZTSSe), perovskite (PVK), Cu(In,Ga)S2 (CIGS), and CdTe thin-film solar cells, is examined. The E U is estimated from an exponential tail in a long-wavelength edge of an external quantum efficiency. It is determined that the relation between short-circuit current density (J SC) and E U is not clearly shown because the J SC is primarily influenced by the bandgap of the thin-film absorbers. On the other hand, E U demonstrates a close relation with V OC,def , where the reduction of the E U leads to the decrease in the V OC,def , implying that the E U can be used as an indicator of the absorber quality. The E U of over 20 meV, observed in the CIGS, CTS, CTGS, SnS, and CZTSSe solar cells, gives rise to the high V OC,def and the low conversion efficiency (η) values. The E U of below 20 meV, seen in the CIGSe, CIGSSe, PVK, and CdTe solar cells, leads to the low V OC,def and high η values. Ultimately, the thin-film absorbers with the E U values of below 20 meV, which is lower than thermal energy under room temperature, is of vital to realize high photovoltaic performances. Correlation between Urbach energy (E U) and open-circuit voltage deficit (V OC,def ) among conventional as well as emerging thin-film solar cells, i.e. Cu(In,Ga)Se2 (CIGSe), Cu(In,Ga)(S,Se)2 (CIGSSe), Cu2SnS3 (CTS), Cu2Sn1-xGexS3 (CTGS), SnS, Cu2ZnSnSxSe4-x (CZTSSe), perovskite (PVK), Cu(In,Ga)S2 (CIGS), and CdTe thin-film solar cells, is examined. The E U is estimated from an exponential tail in a long-wavelength edge of an external quantum efficiency. It is determined that the relation between short-circuit current density (J SC) and E U is not clearly shown because the J SC is primarily influenced by the bandgap of the thin-film absorbers. On the other hand, E U demonstrates a close relation with V OC,def , where the reduction of the E U leads to the decrease in the V OC,def , implying that the E U can be used as an indicator of the absorber quality. The E U of over 20 meV, observed in the CIGS, CTS, CTGS, SnS, and CZTSSe solar cells, gives rise to the high V OC,def and the low conversion efficiency (η) values. The E U of below 20 meV, seen in the CIGSe, CIGSSe, PVK, and CdTe solar cells, leads to the low V OC,def and high η values. Ultimately, the thin-film absorbers with the E U values of below 20 meV, which is lower than thermal energy under room temperature, is of vital to realize high photovoltaic performances. Solar cell Elsevier Urbach energy Elsevier Open-circuit voltage deficit Elsevier Thin film Elsevier Kawano, Yu oth Nishimura, Takahito oth Mavlonov, Abdurashid oth Minemoto, Takashi oth Enthalten in NH, Elsevier Kim, Yohan ELSEVIER Question answering method for infrastructure damage information retrieval from textual data using bidirectional encoder representations from transformers 2021 an international journal devoted to photovoltaic, photothermal, and photochemical solar energy conversion Amsterdam [u.a.] (DE-627)ELV00721202X volume:210 year:2020 day:15 month:06 pages:0 https://doi.org/10.1016/j.solmat.2020.110502 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.03 Methoden im Bauingenieurwesen VZ AR 210 2020 15 0615 0 |
allfieldsSound |
10.1016/j.solmat.2020.110502 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000000984.pica (DE-627)ELV049900129 (ELSEVIER)S0927-0248(20)30107-0 DE-627 ger DE-627 rakwb eng 690 VZ 56.03 bkl Chantana, Jakapan verfasserin aut Impact of Urbach energy on open-circuit voltage deficit of thin-film solar cells 2020transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Correlation between Urbach energy (E U) and open-circuit voltage deficit (V OC,def ) among conventional as well as emerging thin-film solar cells, i.e. Cu(In,Ga)Se2 (CIGSe), Cu(In,Ga)(S,Se)2 (CIGSSe), Cu2SnS3 (CTS), Cu2Sn1-xGexS3 (CTGS), SnS, Cu2ZnSnSxSe4-x (CZTSSe), perovskite (PVK), Cu(In,Ga)S2 (CIGS), and CdTe thin-film solar cells, is examined. The E U is estimated from an exponential tail in a long-wavelength edge of an external quantum efficiency. It is determined that the relation between short-circuit current density (J SC) and E U is not clearly shown because the J SC is primarily influenced by the bandgap of the thin-film absorbers. On the other hand, E U demonstrates a close relation with V OC,def , where the reduction of the E U leads to the decrease in the V OC,def , implying that the E U can be used as an indicator of the absorber quality. The E U of over 20 meV, observed in the CIGS, CTS, CTGS, SnS, and CZTSSe solar cells, gives rise to the high V OC,def and the low conversion efficiency (η) values. The E U of below 20 meV, seen in the CIGSe, CIGSSe, PVK, and CdTe solar cells, leads to the low V OC,def and high η values. Ultimately, the thin-film absorbers with the E U values of below 20 meV, which is lower than thermal energy under room temperature, is of vital to realize high photovoltaic performances. Correlation between Urbach energy (E U) and open-circuit voltage deficit (V OC,def ) among conventional as well as emerging thin-film solar cells, i.e. Cu(In,Ga)Se2 (CIGSe), Cu(In,Ga)(S,Se)2 (CIGSSe), Cu2SnS3 (CTS), Cu2Sn1-xGexS3 (CTGS), SnS, Cu2ZnSnSxSe4-x (CZTSSe), perovskite (PVK), Cu(In,Ga)S2 (CIGS), and CdTe thin-film solar cells, is examined. The E U is estimated from an exponential tail in a long-wavelength edge of an external quantum efficiency. It is determined that the relation between short-circuit current density (J SC) and E U is not clearly shown because the J SC is primarily influenced by the bandgap of the thin-film absorbers. On the other hand, E U demonstrates a close relation with V OC,def , where the reduction of the E U leads to the decrease in the V OC,def , implying that the E U can be used as an indicator of the absorber quality. The E U of over 20 meV, observed in the CIGS, CTS, CTGS, SnS, and CZTSSe solar cells, gives rise to the high V OC,def and the low conversion efficiency (η) values. The E U of below 20 meV, seen in the CIGSe, CIGSSe, PVK, and CdTe solar cells, leads to the low V OC,def and high η values. Ultimately, the thin-film absorbers with the E U values of below 20 meV, which is lower than thermal energy under room temperature, is of vital to realize high photovoltaic performances. Solar cell Elsevier Urbach energy Elsevier Open-circuit voltage deficit Elsevier Thin film Elsevier Kawano, Yu oth Nishimura, Takahito oth Mavlonov, Abdurashid oth Minemoto, Takashi oth Enthalten in NH, Elsevier Kim, Yohan ELSEVIER Question answering method for infrastructure damage information retrieval from textual data using bidirectional encoder representations from transformers 2021 an international journal devoted to photovoltaic, photothermal, and photochemical solar energy conversion Amsterdam [u.a.] (DE-627)ELV00721202X volume:210 year:2020 day:15 month:06 pages:0 https://doi.org/10.1016/j.solmat.2020.110502 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.03 Methoden im Bauingenieurwesen VZ AR 210 2020 15 0615 0 |
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Impact of Urbach energy on open-circuit voltage deficit of thin-film solar cells |
abstract |
Correlation between Urbach energy (E U) and open-circuit voltage deficit (V OC,def ) among conventional as well as emerging thin-film solar cells, i.e. Cu(In,Ga)Se2 (CIGSe), Cu(In,Ga)(S,Se)2 (CIGSSe), Cu2SnS3 (CTS), Cu2Sn1-xGexS3 (CTGS), SnS, Cu2ZnSnSxSe4-x (CZTSSe), perovskite (PVK), Cu(In,Ga)S2 (CIGS), and CdTe thin-film solar cells, is examined. The E U is estimated from an exponential tail in a long-wavelength edge of an external quantum efficiency. It is determined that the relation between short-circuit current density (J SC) and E U is not clearly shown because the J SC is primarily influenced by the bandgap of the thin-film absorbers. On the other hand, E U demonstrates a close relation with V OC,def , where the reduction of the E U leads to the decrease in the V OC,def , implying that the E U can be used as an indicator of the absorber quality. The E U of over 20 meV, observed in the CIGS, CTS, CTGS, SnS, and CZTSSe solar cells, gives rise to the high V OC,def and the low conversion efficiency (η) values. The E U of below 20 meV, seen in the CIGSe, CIGSSe, PVK, and CdTe solar cells, leads to the low V OC,def and high η values. Ultimately, the thin-film absorbers with the E U values of below 20 meV, which is lower than thermal energy under room temperature, is of vital to realize high photovoltaic performances. |
abstractGer |
Correlation between Urbach energy (E U) and open-circuit voltage deficit (V OC,def ) among conventional as well as emerging thin-film solar cells, i.e. Cu(In,Ga)Se2 (CIGSe), Cu(In,Ga)(S,Se)2 (CIGSSe), Cu2SnS3 (CTS), Cu2Sn1-xGexS3 (CTGS), SnS, Cu2ZnSnSxSe4-x (CZTSSe), perovskite (PVK), Cu(In,Ga)S2 (CIGS), and CdTe thin-film solar cells, is examined. The E U is estimated from an exponential tail in a long-wavelength edge of an external quantum efficiency. It is determined that the relation between short-circuit current density (J SC) and E U is not clearly shown because the J SC is primarily influenced by the bandgap of the thin-film absorbers. On the other hand, E U demonstrates a close relation with V OC,def , where the reduction of the E U leads to the decrease in the V OC,def , implying that the E U can be used as an indicator of the absorber quality. The E U of over 20 meV, observed in the CIGS, CTS, CTGS, SnS, and CZTSSe solar cells, gives rise to the high V OC,def and the low conversion efficiency (η) values. The E U of below 20 meV, seen in the CIGSe, CIGSSe, PVK, and CdTe solar cells, leads to the low V OC,def and high η values. Ultimately, the thin-film absorbers with the E U values of below 20 meV, which is lower than thermal energy under room temperature, is of vital to realize high photovoltaic performances. |
abstract_unstemmed |
Correlation between Urbach energy (E U) and open-circuit voltage deficit (V OC,def ) among conventional as well as emerging thin-film solar cells, i.e. Cu(In,Ga)Se2 (CIGSe), Cu(In,Ga)(S,Se)2 (CIGSSe), Cu2SnS3 (CTS), Cu2Sn1-xGexS3 (CTGS), SnS, Cu2ZnSnSxSe4-x (CZTSSe), perovskite (PVK), Cu(In,Ga)S2 (CIGS), and CdTe thin-film solar cells, is examined. The E U is estimated from an exponential tail in a long-wavelength edge of an external quantum efficiency. It is determined that the relation between short-circuit current density (J SC) and E U is not clearly shown because the J SC is primarily influenced by the bandgap of the thin-film absorbers. On the other hand, E U demonstrates a close relation with V OC,def , where the reduction of the E U leads to the decrease in the V OC,def , implying that the E U can be used as an indicator of the absorber quality. The E U of over 20 meV, observed in the CIGS, CTS, CTGS, SnS, and CZTSSe solar cells, gives rise to the high V OC,def and the low conversion efficiency (η) values. The E U of below 20 meV, seen in the CIGSe, CIGSSe, PVK, and CdTe solar cells, leads to the low V OC,def and high η values. Ultimately, the thin-film absorbers with the E U values of below 20 meV, which is lower than thermal energy under room temperature, is of vital to realize high photovoltaic performances. |
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