Vacancy-induced resistive switching and synaptic behavior in flexible BSTCf memristor crossbars
In this study, carbon fibers (Cf) coated with Ba0 . 6Sr0 . 4TiO3 (BST) (BSTCf) were prepared by magnetron sputtering and subsequently heated in nitrogen to produce oxygen vacancies. BST@Cf and nitrogen-treated BST@Cf were cross-stacked on polyimide (PI) film to make a BST@Cf memristor. The electrica...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Wang, Ze [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2020transfer abstract |
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| Schlagwörter: |
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| Umfang: |
9 |
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| Übergeordnetes Werk: |
Enthalten in: Soil and water bioengineering: Practice and research needs for reconciling natural hazard control and ecological restoration - Rey, F. ELSEVIER, 2018, Amsterdam [u.a.] |
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| Übergeordnetes Werk: |
volume:46 ; year:2020 ; number:13 ; pages:21569-21577 ; extent:9 |
| Links: |
|---|
| DOI / URN: |
10.1016/j.ceramint.2020.05.262 |
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| Katalog-ID: |
ELV050959786 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | ELV050959786 | ||
| 003 | DE-627 | ||
| 005 | 20230626031353.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 210910s2020 xx |||||o 00| ||eng c | ||
| 024 | 7 | |a 10.1016/j.ceramint.2020.05.262 |2 doi | |
| 028 | 5 | 2 | |a /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001090.pica |
| 035 | |a (DE-627)ELV050959786 | ||
| 035 | |a (ELSEVIER)S0272-8842(20)31576-5 | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 082 | 0 | 4 | |a 333.7 |a 610 |q VZ |
| 084 | |a 43.12 |2 bkl | ||
| 084 | |a 43.13 |2 bkl | ||
| 084 | |a 44.13 |2 bkl | ||
| 100 | 1 | |a Wang, Ze |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Vacancy-induced resistive switching and synaptic behavior in flexible BSTCf memristor crossbars |
| 264 | 1 | |c 2020transfer abstract | |
| 300 | |a 9 | ||
| 336 | |a nicht spezifiziert |b zzz |2 rdacontent | ||
| 337 | |a nicht spezifiziert |b z |2 rdamedia | ||
| 338 | |a nicht spezifiziert |b zu |2 rdacarrier | ||
| 520 | |a In this study, carbon fibers (Cf) coated with Ba0 . 6Sr0 . 4TiO3 (BST) (BSTCf) were prepared by magnetron sputtering and subsequently heated in nitrogen to produce oxygen vacancies. BST@Cf and nitrogen-treated BST@Cf were cross-stacked on polyimide (PI) film to make a BST@Cf memristor. The electrical properties of BST@Cf memristor were measured after being bent 3000 times. The device exhibits bipolar figure-of-eight (f8) hysteresis loop characteristics under applied voltage. The hysteresis loops narrow with increasing temperature of heat treatment in nitrogen, due to decrease in oxygen vacancy concentration. The hysteresis loops demonstrate the switching process of resistance between high resistance state (HRS) and low resistance state (LRS), with a maximum HRS/LRS ratio of 106. The switching process can be divided into two parts, corresponding to Schottky Emission and Fowler-Nordheim (F–N) Tunneling. It is notable that no electroforming voltage is required to stimulate the memristor. The constructed memristor was cycled successfully 1000 times and retained the LRS 787 s during power cut off. In addition, the device exhibited synaptic behavior including learning and forgetting processes, in accordance with the paired-pulse facilitation (PPF) rule. The use of BST@Cf in the construction of the nonvolatile memristor imparts flexibility to the device allowing for the possibility of wearable flexible intelligent memristor based electronic devices in the future. | ||
| 520 | |a In this study, carbon fibers (Cf) coated with Ba0 . 6Sr0 . 4TiO3 (BST) (BSTCf) were prepared by magnetron sputtering and subsequently heated in nitrogen to produce oxygen vacancies. BST@Cf and nitrogen-treated BST@Cf were cross-stacked on polyimide (PI) film to make a BST@Cf memristor. The electrical properties of BST@Cf memristor were measured after being bent 3000 times. The device exhibits bipolar figure-of-eight (f8) hysteresis loop characteristics under applied voltage. The hysteresis loops narrow with increasing temperature of heat treatment in nitrogen, due to decrease in oxygen vacancy concentration. The hysteresis loops demonstrate the switching process of resistance between high resistance state (HRS) and low resistance state (LRS), with a maximum HRS/LRS ratio of 106. The switching process can be divided into two parts, corresponding to Schottky Emission and Fowler-Nordheim (F–N) Tunneling. It is notable that no electroforming voltage is required to stimulate the memristor. The constructed memristor was cycled successfully 1000 times and retained the LRS 787 s during power cut off. In addition, the device exhibited synaptic behavior including learning and forgetting processes, in accordance with the paired-pulse facilitation (PPF) rule. The use of BST@Cf in the construction of the nonvolatile memristor imparts flexibility to the device allowing for the possibility of wearable flexible intelligent memristor based electronic devices in the future. | ||
| 650 | 7 | |a No electroforming voltage |2 Elsevier | |
| 650 | 7 | |a Synaptic behavior |2 Elsevier | |
| 650 | 7 | |a Flexible memristor |2 Elsevier | |
| 650 | 7 | |a Barium strontium titanate |2 Elsevier | |
| 650 | 7 | |a Carbon fiber |2 Elsevier | |
| 700 | 1 | |a Yue, Jianling |4 oth | |
| 700 | 1 | |a Jiang, Chao |4 oth | |
| 700 | 1 | |a Abrahams, Isaac |4 oth | |
| 700 | 1 | |a Yu, Yantao |4 oth | |
| 700 | 1 | |a Li, Yunxin |4 oth | |
| 700 | 1 | |a Du, Zuojuan |4 oth | |
| 700 | 1 | |a Huang, Xiaozhong |4 oth | |
| 700 | 1 | |a Li, Linling |4 oth | |
| 700 | 1 | |a Wang, Guangyuan |4 oth | |
| 700 | 1 | |a Zhou, Hao |4 oth | |
| 773 | 0 | 8 | |i Enthalten in |n Elsevier Science |a Rey, F. ELSEVIER |t Soil and water bioengineering: Practice and research needs for reconciling natural hazard control and ecological restoration |d 2018 |g Amsterdam [u.a.] |w (DE-627)ELV000899798 |
| 773 | 1 | 8 | |g volume:46 |g year:2020 |g number:13 |g pages:21569-21577 |g extent:9 |
| 856 | 4 | 0 | |u https://doi.org/10.1016/j.ceramint.2020.05.262 |3 Volltext |
| 912 | |a GBV_USEFLAG_U | ||
| 912 | |a GBV_ELV | ||
| 912 | |a SYSFLAG_U | ||
| 912 | |a SSG-OLC-PHA | ||
| 912 | |a SSG-OPC-GGO | ||
| 936 | b | k | |a 43.12 |j Umweltchemie |q VZ |
| 936 | b | k | |a 43.13 |j Umwelttoxikologie |q VZ |
| 936 | b | k | |a 44.13 |j Medizinische Ökologie |q VZ |
| 951 | |a AR | ||
| 952 | |d 46 |j 2020 |e 13 |h 21569-21577 |g 9 | ||
| author_variant |
z w zw |
|---|---|
| matchkey_str |
wangzeyuejianlingjiangchaoabrahamsisaacy:2020----:aacidcdeitvsicignsnpibhvoifeilb |
| hierarchy_sort_str |
2020transfer abstract |
| bklnumber |
43.12 43.13 44.13 |
| publishDate |
2020 |
| allfields |
10.1016/j.ceramint.2020.05.262 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001090.pica (DE-627)ELV050959786 (ELSEVIER)S0272-8842(20)31576-5 DE-627 ger DE-627 rakwb eng 333.7 610 VZ 43.12 bkl 43.13 bkl 44.13 bkl Wang, Ze verfasserin aut Vacancy-induced resistive switching and synaptic behavior in flexible BSTCf memristor crossbars 2020transfer abstract 9 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier In this study, carbon fibers (Cf) coated with Ba0 . 6Sr0 . 4TiO3 (BST) (BSTCf) were prepared by magnetron sputtering and subsequently heated in nitrogen to produce oxygen vacancies. BST@Cf and nitrogen-treated BST@Cf were cross-stacked on polyimide (PI) film to make a BST@Cf memristor. The electrical properties of BST@Cf memristor were measured after being bent 3000 times. The device exhibits bipolar figure-of-eight (f8) hysteresis loop characteristics under applied voltage. The hysteresis loops narrow with increasing temperature of heat treatment in nitrogen, due to decrease in oxygen vacancy concentration. The hysteresis loops demonstrate the switching process of resistance between high resistance state (HRS) and low resistance state (LRS), with a maximum HRS/LRS ratio of 106. The switching process can be divided into two parts, corresponding to Schottky Emission and Fowler-Nordheim (F–N) Tunneling. It is notable that no electroforming voltage is required to stimulate the memristor. The constructed memristor was cycled successfully 1000 times and retained the LRS 787 s during power cut off. In addition, the device exhibited synaptic behavior including learning and forgetting processes, in accordance with the paired-pulse facilitation (PPF) rule. The use of BST@Cf in the construction of the nonvolatile memristor imparts flexibility to the device allowing for the possibility of wearable flexible intelligent memristor based electronic devices in the future. In this study, carbon fibers (Cf) coated with Ba0 . 6Sr0 . 4TiO3 (BST) (BSTCf) were prepared by magnetron sputtering and subsequently heated in nitrogen to produce oxygen vacancies. BST@Cf and nitrogen-treated BST@Cf were cross-stacked on polyimide (PI) film to make a BST@Cf memristor. The electrical properties of BST@Cf memristor were measured after being bent 3000 times. The device exhibits bipolar figure-of-eight (f8) hysteresis loop characteristics under applied voltage. The hysteresis loops narrow with increasing temperature of heat treatment in nitrogen, due to decrease in oxygen vacancy concentration. The hysteresis loops demonstrate the switching process of resistance between high resistance state (HRS) and low resistance state (LRS), with a maximum HRS/LRS ratio of 106. The switching process can be divided into two parts, corresponding to Schottky Emission and Fowler-Nordheim (F–N) Tunneling. It is notable that no electroforming voltage is required to stimulate the memristor. The constructed memristor was cycled successfully 1000 times and retained the LRS 787 s during power cut off. In addition, the device exhibited synaptic behavior including learning and forgetting processes, in accordance with the paired-pulse facilitation (PPF) rule. The use of BST@Cf in the construction of the nonvolatile memristor imparts flexibility to the device allowing for the possibility of wearable flexible intelligent memristor based electronic devices in the future. No electroforming voltage Elsevier Synaptic behavior Elsevier Flexible memristor Elsevier Barium strontium titanate Elsevier Carbon fiber Elsevier Yue, Jianling oth Jiang, Chao oth Abrahams, Isaac oth Yu, Yantao oth Li, Yunxin oth Du, Zuojuan oth Huang, Xiaozhong oth Li, Linling oth Wang, Guangyuan oth Zhou, Hao oth Enthalten in Elsevier Science Rey, F. ELSEVIER Soil and water bioengineering: Practice and research needs for reconciling natural hazard control and ecological restoration 2018 Amsterdam [u.a.] (DE-627)ELV000899798 volume:46 year:2020 number:13 pages:21569-21577 extent:9 https://doi.org/10.1016/j.ceramint.2020.05.262 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA SSG-OPC-GGO 43.12 Umweltchemie VZ 43.13 Umwelttoxikologie VZ 44.13 Medizinische Ökologie VZ AR 46 2020 13 21569-21577 9 |
| spelling |
10.1016/j.ceramint.2020.05.262 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001090.pica (DE-627)ELV050959786 (ELSEVIER)S0272-8842(20)31576-5 DE-627 ger DE-627 rakwb eng 333.7 610 VZ 43.12 bkl 43.13 bkl 44.13 bkl Wang, Ze verfasserin aut Vacancy-induced resistive switching and synaptic behavior in flexible BSTCf memristor crossbars 2020transfer abstract 9 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier In this study, carbon fibers (Cf) coated with Ba0 . 6Sr0 . 4TiO3 (BST) (BSTCf) were prepared by magnetron sputtering and subsequently heated in nitrogen to produce oxygen vacancies. BST@Cf and nitrogen-treated BST@Cf were cross-stacked on polyimide (PI) film to make a BST@Cf memristor. The electrical properties of BST@Cf memristor were measured after being bent 3000 times. The device exhibits bipolar figure-of-eight (f8) hysteresis loop characteristics under applied voltage. The hysteresis loops narrow with increasing temperature of heat treatment in nitrogen, due to decrease in oxygen vacancy concentration. The hysteresis loops demonstrate the switching process of resistance between high resistance state (HRS) and low resistance state (LRS), with a maximum HRS/LRS ratio of 106. The switching process can be divided into two parts, corresponding to Schottky Emission and Fowler-Nordheim (F–N) Tunneling. It is notable that no electroforming voltage is required to stimulate the memristor. The constructed memristor was cycled successfully 1000 times and retained the LRS 787 s during power cut off. In addition, the device exhibited synaptic behavior including learning and forgetting processes, in accordance with the paired-pulse facilitation (PPF) rule. The use of BST@Cf in the construction of the nonvolatile memristor imparts flexibility to the device allowing for the possibility of wearable flexible intelligent memristor based electronic devices in the future. In this study, carbon fibers (Cf) coated with Ba0 . 6Sr0 . 4TiO3 (BST) (BSTCf) were prepared by magnetron sputtering and subsequently heated in nitrogen to produce oxygen vacancies. BST@Cf and nitrogen-treated BST@Cf were cross-stacked on polyimide (PI) film to make a BST@Cf memristor. The electrical properties of BST@Cf memristor were measured after being bent 3000 times. The device exhibits bipolar figure-of-eight (f8) hysteresis loop characteristics under applied voltage. The hysteresis loops narrow with increasing temperature of heat treatment in nitrogen, due to decrease in oxygen vacancy concentration. The hysteresis loops demonstrate the switching process of resistance between high resistance state (HRS) and low resistance state (LRS), with a maximum HRS/LRS ratio of 106. The switching process can be divided into two parts, corresponding to Schottky Emission and Fowler-Nordheim (F–N) Tunneling. It is notable that no electroforming voltage is required to stimulate the memristor. The constructed memristor was cycled successfully 1000 times and retained the LRS 787 s during power cut off. In addition, the device exhibited synaptic behavior including learning and forgetting processes, in accordance with the paired-pulse facilitation (PPF) rule. The use of BST@Cf in the construction of the nonvolatile memristor imparts flexibility to the device allowing for the possibility of wearable flexible intelligent memristor based electronic devices in the future. No electroforming voltage Elsevier Synaptic behavior Elsevier Flexible memristor Elsevier Barium strontium titanate Elsevier Carbon fiber Elsevier Yue, Jianling oth Jiang, Chao oth Abrahams, Isaac oth Yu, Yantao oth Li, Yunxin oth Du, Zuojuan oth Huang, Xiaozhong oth Li, Linling oth Wang, Guangyuan oth Zhou, Hao oth Enthalten in Elsevier Science Rey, F. ELSEVIER Soil and water bioengineering: Practice and research needs for reconciling natural hazard control and ecological restoration 2018 Amsterdam [u.a.] (DE-627)ELV000899798 volume:46 year:2020 number:13 pages:21569-21577 extent:9 https://doi.org/10.1016/j.ceramint.2020.05.262 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA SSG-OPC-GGO 43.12 Umweltchemie VZ 43.13 Umwelttoxikologie VZ 44.13 Medizinische Ökologie VZ AR 46 2020 13 21569-21577 9 |
| allfields_unstemmed |
10.1016/j.ceramint.2020.05.262 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001090.pica (DE-627)ELV050959786 (ELSEVIER)S0272-8842(20)31576-5 DE-627 ger DE-627 rakwb eng 333.7 610 VZ 43.12 bkl 43.13 bkl 44.13 bkl Wang, Ze verfasserin aut Vacancy-induced resistive switching and synaptic behavior in flexible BSTCf memristor crossbars 2020transfer abstract 9 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier In this study, carbon fibers (Cf) coated with Ba0 . 6Sr0 . 4TiO3 (BST) (BSTCf) were prepared by magnetron sputtering and subsequently heated in nitrogen to produce oxygen vacancies. BST@Cf and nitrogen-treated BST@Cf were cross-stacked on polyimide (PI) film to make a BST@Cf memristor. The electrical properties of BST@Cf memristor were measured after being bent 3000 times. The device exhibits bipolar figure-of-eight (f8) hysteresis loop characteristics under applied voltage. The hysteresis loops narrow with increasing temperature of heat treatment in nitrogen, due to decrease in oxygen vacancy concentration. The hysteresis loops demonstrate the switching process of resistance between high resistance state (HRS) and low resistance state (LRS), with a maximum HRS/LRS ratio of 106. The switching process can be divided into two parts, corresponding to Schottky Emission and Fowler-Nordheim (F–N) Tunneling. It is notable that no electroforming voltage is required to stimulate the memristor. The constructed memristor was cycled successfully 1000 times and retained the LRS 787 s during power cut off. In addition, the device exhibited synaptic behavior including learning and forgetting processes, in accordance with the paired-pulse facilitation (PPF) rule. The use of BST@Cf in the construction of the nonvolatile memristor imparts flexibility to the device allowing for the possibility of wearable flexible intelligent memristor based electronic devices in the future. In this study, carbon fibers (Cf) coated with Ba0 . 6Sr0 . 4TiO3 (BST) (BSTCf) were prepared by magnetron sputtering and subsequently heated in nitrogen to produce oxygen vacancies. BST@Cf and nitrogen-treated BST@Cf were cross-stacked on polyimide (PI) film to make a BST@Cf memristor. The electrical properties of BST@Cf memristor were measured after being bent 3000 times. The device exhibits bipolar figure-of-eight (f8) hysteresis loop characteristics under applied voltage. The hysteresis loops narrow with increasing temperature of heat treatment in nitrogen, due to decrease in oxygen vacancy concentration. The hysteresis loops demonstrate the switching process of resistance between high resistance state (HRS) and low resistance state (LRS), with a maximum HRS/LRS ratio of 106. The switching process can be divided into two parts, corresponding to Schottky Emission and Fowler-Nordheim (F–N) Tunneling. It is notable that no electroforming voltage is required to stimulate the memristor. The constructed memristor was cycled successfully 1000 times and retained the LRS 787 s during power cut off. In addition, the device exhibited synaptic behavior including learning and forgetting processes, in accordance with the paired-pulse facilitation (PPF) rule. The use of BST@Cf in the construction of the nonvolatile memristor imparts flexibility to the device allowing for the possibility of wearable flexible intelligent memristor based electronic devices in the future. No electroforming voltage Elsevier Synaptic behavior Elsevier Flexible memristor Elsevier Barium strontium titanate Elsevier Carbon fiber Elsevier Yue, Jianling oth Jiang, Chao oth Abrahams, Isaac oth Yu, Yantao oth Li, Yunxin oth Du, Zuojuan oth Huang, Xiaozhong oth Li, Linling oth Wang, Guangyuan oth Zhou, Hao oth Enthalten in Elsevier Science Rey, F. ELSEVIER Soil and water bioengineering: Practice and research needs for reconciling natural hazard control and ecological restoration 2018 Amsterdam [u.a.] (DE-627)ELV000899798 volume:46 year:2020 number:13 pages:21569-21577 extent:9 https://doi.org/10.1016/j.ceramint.2020.05.262 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA SSG-OPC-GGO 43.12 Umweltchemie VZ 43.13 Umwelttoxikologie VZ 44.13 Medizinische Ökologie VZ AR 46 2020 13 21569-21577 9 |
| allfieldsGer |
10.1016/j.ceramint.2020.05.262 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001090.pica (DE-627)ELV050959786 (ELSEVIER)S0272-8842(20)31576-5 DE-627 ger DE-627 rakwb eng 333.7 610 VZ 43.12 bkl 43.13 bkl 44.13 bkl Wang, Ze verfasserin aut Vacancy-induced resistive switching and synaptic behavior in flexible BSTCf memristor crossbars 2020transfer abstract 9 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier In this study, carbon fibers (Cf) coated with Ba0 . 6Sr0 . 4TiO3 (BST) (BSTCf) were prepared by magnetron sputtering and subsequently heated in nitrogen to produce oxygen vacancies. BST@Cf and nitrogen-treated BST@Cf were cross-stacked on polyimide (PI) film to make a BST@Cf memristor. The electrical properties of BST@Cf memristor were measured after being bent 3000 times. The device exhibits bipolar figure-of-eight (f8) hysteresis loop characteristics under applied voltage. The hysteresis loops narrow with increasing temperature of heat treatment in nitrogen, due to decrease in oxygen vacancy concentration. The hysteresis loops demonstrate the switching process of resistance between high resistance state (HRS) and low resistance state (LRS), with a maximum HRS/LRS ratio of 106. The switching process can be divided into two parts, corresponding to Schottky Emission and Fowler-Nordheim (F–N) Tunneling. It is notable that no electroforming voltage is required to stimulate the memristor. The constructed memristor was cycled successfully 1000 times and retained the LRS 787 s during power cut off. In addition, the device exhibited synaptic behavior including learning and forgetting processes, in accordance with the paired-pulse facilitation (PPF) rule. The use of BST@Cf in the construction of the nonvolatile memristor imparts flexibility to the device allowing for the possibility of wearable flexible intelligent memristor based electronic devices in the future. In this study, carbon fibers (Cf) coated with Ba0 . 6Sr0 . 4TiO3 (BST) (BSTCf) were prepared by magnetron sputtering and subsequently heated in nitrogen to produce oxygen vacancies. BST@Cf and nitrogen-treated BST@Cf were cross-stacked on polyimide (PI) film to make a BST@Cf memristor. The electrical properties of BST@Cf memristor were measured after being bent 3000 times. The device exhibits bipolar figure-of-eight (f8) hysteresis loop characteristics under applied voltage. The hysteresis loops narrow with increasing temperature of heat treatment in nitrogen, due to decrease in oxygen vacancy concentration. The hysteresis loops demonstrate the switching process of resistance between high resistance state (HRS) and low resistance state (LRS), with a maximum HRS/LRS ratio of 106. The switching process can be divided into two parts, corresponding to Schottky Emission and Fowler-Nordheim (F–N) Tunneling. It is notable that no electroforming voltage is required to stimulate the memristor. The constructed memristor was cycled successfully 1000 times and retained the LRS 787 s during power cut off. In addition, the device exhibited synaptic behavior including learning and forgetting processes, in accordance with the paired-pulse facilitation (PPF) rule. The use of BST@Cf in the construction of the nonvolatile memristor imparts flexibility to the device allowing for the possibility of wearable flexible intelligent memristor based electronic devices in the future. No electroforming voltage Elsevier Synaptic behavior Elsevier Flexible memristor Elsevier Barium strontium titanate Elsevier Carbon fiber Elsevier Yue, Jianling oth Jiang, Chao oth Abrahams, Isaac oth Yu, Yantao oth Li, Yunxin oth Du, Zuojuan oth Huang, Xiaozhong oth Li, Linling oth Wang, Guangyuan oth Zhou, Hao oth Enthalten in Elsevier Science Rey, F. ELSEVIER Soil and water bioengineering: Practice and research needs for reconciling natural hazard control and ecological restoration 2018 Amsterdam [u.a.] (DE-627)ELV000899798 volume:46 year:2020 number:13 pages:21569-21577 extent:9 https://doi.org/10.1016/j.ceramint.2020.05.262 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA SSG-OPC-GGO 43.12 Umweltchemie VZ 43.13 Umwelttoxikologie VZ 44.13 Medizinische Ökologie VZ AR 46 2020 13 21569-21577 9 |
| allfieldsSound |
10.1016/j.ceramint.2020.05.262 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001090.pica (DE-627)ELV050959786 (ELSEVIER)S0272-8842(20)31576-5 DE-627 ger DE-627 rakwb eng 333.7 610 VZ 43.12 bkl 43.13 bkl 44.13 bkl Wang, Ze verfasserin aut Vacancy-induced resistive switching and synaptic behavior in flexible BSTCf memristor crossbars 2020transfer abstract 9 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier In this study, carbon fibers (Cf) coated with Ba0 . 6Sr0 . 4TiO3 (BST) (BSTCf) were prepared by magnetron sputtering and subsequently heated in nitrogen to produce oxygen vacancies. BST@Cf and nitrogen-treated BST@Cf were cross-stacked on polyimide (PI) film to make a BST@Cf memristor. The electrical properties of BST@Cf memristor were measured after being bent 3000 times. The device exhibits bipolar figure-of-eight (f8) hysteresis loop characteristics under applied voltage. The hysteresis loops narrow with increasing temperature of heat treatment in nitrogen, due to decrease in oxygen vacancy concentration. The hysteresis loops demonstrate the switching process of resistance between high resistance state (HRS) and low resistance state (LRS), with a maximum HRS/LRS ratio of 106. The switching process can be divided into two parts, corresponding to Schottky Emission and Fowler-Nordheim (F–N) Tunneling. It is notable that no electroforming voltage is required to stimulate the memristor. The constructed memristor was cycled successfully 1000 times and retained the LRS 787 s during power cut off. In addition, the device exhibited synaptic behavior including learning and forgetting processes, in accordance with the paired-pulse facilitation (PPF) rule. The use of BST@Cf in the construction of the nonvolatile memristor imparts flexibility to the device allowing for the possibility of wearable flexible intelligent memristor based electronic devices in the future. In this study, carbon fibers (Cf) coated with Ba0 . 6Sr0 . 4TiO3 (BST) (BSTCf) were prepared by magnetron sputtering and subsequently heated in nitrogen to produce oxygen vacancies. BST@Cf and nitrogen-treated BST@Cf were cross-stacked on polyimide (PI) film to make a BST@Cf memristor. The electrical properties of BST@Cf memristor were measured after being bent 3000 times. The device exhibits bipolar figure-of-eight (f8) hysteresis loop characteristics under applied voltage. The hysteresis loops narrow with increasing temperature of heat treatment in nitrogen, due to decrease in oxygen vacancy concentration. The hysteresis loops demonstrate the switching process of resistance between high resistance state (HRS) and low resistance state (LRS), with a maximum HRS/LRS ratio of 106. The switching process can be divided into two parts, corresponding to Schottky Emission and Fowler-Nordheim (F–N) Tunneling. It is notable that no electroforming voltage is required to stimulate the memristor. The constructed memristor was cycled successfully 1000 times and retained the LRS 787 s during power cut off. In addition, the device exhibited synaptic behavior including learning and forgetting processes, in accordance with the paired-pulse facilitation (PPF) rule. The use of BST@Cf in the construction of the nonvolatile memristor imparts flexibility to the device allowing for the possibility of wearable flexible intelligent memristor based electronic devices in the future. No electroforming voltage Elsevier Synaptic behavior Elsevier Flexible memristor Elsevier Barium strontium titanate Elsevier Carbon fiber Elsevier Yue, Jianling oth Jiang, Chao oth Abrahams, Isaac oth Yu, Yantao oth Li, Yunxin oth Du, Zuojuan oth Huang, Xiaozhong oth Li, Linling oth Wang, Guangyuan oth Zhou, Hao oth Enthalten in Elsevier Science Rey, F. ELSEVIER Soil and water bioengineering: Practice and research needs for reconciling natural hazard control and ecological restoration 2018 Amsterdam [u.a.] (DE-627)ELV000899798 volume:46 year:2020 number:13 pages:21569-21577 extent:9 https://doi.org/10.1016/j.ceramint.2020.05.262 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA SSG-OPC-GGO 43.12 Umweltchemie VZ 43.13 Umwelttoxikologie VZ 44.13 Medizinische Ökologie VZ AR 46 2020 13 21569-21577 9 |
| language |
English |
| source |
Enthalten in Soil and water bioengineering: Practice and research needs for reconciling natural hazard control and ecological restoration Amsterdam [u.a.] volume:46 year:2020 number:13 pages:21569-21577 extent:9 |
| sourceStr |
Enthalten in Soil and water bioengineering: Practice and research needs for reconciling natural hazard control and ecological restoration Amsterdam [u.a.] volume:46 year:2020 number:13 pages:21569-21577 extent:9 |
| format_phy_str_mv |
Article |
| bklname |
Umweltchemie Umwelttoxikologie Medizinische Ökologie |
| institution |
findex.gbv.de |
| topic_facet |
No electroforming voltage Synaptic behavior Flexible memristor Barium strontium titanate Carbon fiber |
| dewey-raw |
333.7 |
| isfreeaccess_bool |
false |
| container_title |
Soil and water bioengineering: Practice and research needs for reconciling natural hazard control and ecological restoration |
| authorswithroles_txt_mv |
Wang, Ze @@aut@@ Yue, Jianling @@oth@@ Jiang, Chao @@oth@@ Abrahams, Isaac @@oth@@ Yu, Yantao @@oth@@ Li, Yunxin @@oth@@ Du, Zuojuan @@oth@@ Huang, Xiaozhong @@oth@@ Li, Linling @@oth@@ Wang, Guangyuan @@oth@@ Zhou, Hao @@oth@@ |
| publishDateDaySort_date |
2020-01-01T00:00:00Z |
| hierarchy_top_id |
ELV000899798 |
| dewey-sort |
3333.7 |
| id |
ELV050959786 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV050959786</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230626031353.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">210910s2020 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.ceramint.2020.05.262</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">/cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001090.pica</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV050959786</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S0272-8842(20)31576-5</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">333.7</subfield><subfield code="a">610</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">43.12</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">43.13</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">44.13</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Wang, Ze</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Vacancy-induced resistive switching and synaptic behavior in flexible BSTCf memristor crossbars</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2020transfer abstract</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">9</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">In this study, carbon fibers (Cf) coated with Ba0 . 6Sr0 . 4TiO3 (BST) (BSTCf) were prepared by magnetron sputtering and subsequently heated in nitrogen to produce oxygen vacancies. BST@Cf and nitrogen-treated BST@Cf were cross-stacked on polyimide (PI) film to make a BST@Cf memristor. The electrical properties of BST@Cf memristor were measured after being bent 3000 times. The device exhibits bipolar figure-of-eight (f8) hysteresis loop characteristics under applied voltage. The hysteresis loops narrow with increasing temperature of heat treatment in nitrogen, due to decrease in oxygen vacancy concentration. The hysteresis loops demonstrate the switching process of resistance between high resistance state (HRS) and low resistance state (LRS), with a maximum HRS/LRS ratio of 106. The switching process can be divided into two parts, corresponding to Schottky Emission and Fowler-Nordheim (F–N) Tunneling. It is notable that no electroforming voltage is required to stimulate the memristor. The constructed memristor was cycled successfully 1000 times and retained the LRS 787 s during power cut off. In addition, the device exhibited synaptic behavior including learning and forgetting processes, in accordance with the paired-pulse facilitation (PPF) rule. The use of BST@Cf in the construction of the nonvolatile memristor imparts flexibility to the device allowing for the possibility of wearable flexible intelligent memristor based electronic devices in the future.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">In this study, carbon fibers (Cf) coated with Ba0 . 6Sr0 . 4TiO3 (BST) (BSTCf) were prepared by magnetron sputtering and subsequently heated in nitrogen to produce oxygen vacancies. BST@Cf and nitrogen-treated BST@Cf were cross-stacked on polyimide (PI) film to make a BST@Cf memristor. The electrical properties of BST@Cf memristor were measured after being bent 3000 times. The device exhibits bipolar figure-of-eight (f8) hysteresis loop characteristics under applied voltage. The hysteresis loops narrow with increasing temperature of heat treatment in nitrogen, due to decrease in oxygen vacancy concentration. The hysteresis loops demonstrate the switching process of resistance between high resistance state (HRS) and low resistance state (LRS), with a maximum HRS/LRS ratio of 106. The switching process can be divided into two parts, corresponding to Schottky Emission and Fowler-Nordheim (F–N) Tunneling. It is notable that no electroforming voltage is required to stimulate the memristor. The constructed memristor was cycled successfully 1000 times and retained the LRS 787 s during power cut off. In addition, the device exhibited synaptic behavior including learning and forgetting processes, in accordance with the paired-pulse facilitation (PPF) rule. The use of BST@Cf in the construction of the nonvolatile memristor imparts flexibility to the device allowing for the possibility of wearable flexible intelligent memristor based electronic devices in the future.</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">No electroforming voltage</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Synaptic behavior</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Flexible memristor</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Barium strontium titanate</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Carbon fiber</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Yue, Jianling</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Jiang, Chao</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Abrahams, Isaac</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Yu, Yantao</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Li, Yunxin</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Du, Zuojuan</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Huang, Xiaozhong</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Li, Linling</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wang, Guangyuan</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zhou, Hao</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="n">Elsevier Science</subfield><subfield code="a">Rey, F. ELSEVIER</subfield><subfield code="t">Soil and water bioengineering: Practice and research needs for reconciling natural hazard control and ecological restoration</subfield><subfield code="d">2018</subfield><subfield code="g">Amsterdam [u.a.]</subfield><subfield code="w">(DE-627)ELV000899798</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:46</subfield><subfield code="g">year:2020</subfield><subfield code="g">number:13</subfield><subfield code="g">pages:21569-21577</subfield><subfield code="g">extent:9</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1016/j.ceramint.2020.05.262</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHA</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OPC-GGO</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">43.12</subfield><subfield code="j">Umweltchemie</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">43.13</subfield><subfield code="j">Umwelttoxikologie</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">44.13</subfield><subfield code="j">Medizinische Ökologie</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">46</subfield><subfield code="j">2020</subfield><subfield code="e">13</subfield><subfield code="h">21569-21577</subfield><subfield code="g">9</subfield></datafield></record></collection>
|
| author |
Wang, Ze |
| spellingShingle |
Wang, Ze ddc 333.7 bkl 43.12 bkl 43.13 bkl 44.13 Elsevier No electroforming voltage Elsevier Synaptic behavior Elsevier Flexible memristor Elsevier Barium strontium titanate Elsevier Carbon fiber Vacancy-induced resistive switching and synaptic behavior in flexible BSTCf memristor crossbars |
| authorStr |
Wang, Ze |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)ELV000899798 |
| format |
electronic Article |
| dewey-ones |
333 - Economics of land & energy 610 - Medicine & health |
| delete_txt_mv |
keep |
| author_role |
aut |
| collection |
elsevier |
| remote_str |
true |
| illustrated |
Not Illustrated |
| topic_title |
333.7 610 VZ 43.12 bkl 43.13 bkl 44.13 bkl Vacancy-induced resistive switching and synaptic behavior in flexible BSTCf memristor crossbars No electroforming voltage Elsevier Synaptic behavior Elsevier Flexible memristor Elsevier Barium strontium titanate Elsevier Carbon fiber Elsevier |
| topic |
ddc 333.7 bkl 43.12 bkl 43.13 bkl 44.13 Elsevier No electroforming voltage Elsevier Synaptic behavior Elsevier Flexible memristor Elsevier Barium strontium titanate Elsevier Carbon fiber |
| topic_unstemmed |
ddc 333.7 bkl 43.12 bkl 43.13 bkl 44.13 Elsevier No electroforming voltage Elsevier Synaptic behavior Elsevier Flexible memristor Elsevier Barium strontium titanate Elsevier Carbon fiber |
| topic_browse |
ddc 333.7 bkl 43.12 bkl 43.13 bkl 44.13 Elsevier No electroforming voltage Elsevier Synaptic behavior Elsevier Flexible memristor Elsevier Barium strontium titanate Elsevier Carbon fiber |
| format_facet |
Elektronische Aufsätze Aufsätze Elektronische Ressource |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
zu |
| author2_variant |
j y jy c j cj i a ia y y yy y l yl z d zd x h xh l l ll g w gw h z hz |
| hierarchy_parent_title |
Soil and water bioengineering: Practice and research needs for reconciling natural hazard control and ecological restoration |
| hierarchy_parent_id |
ELV000899798 |
| dewey-tens |
330 - Economics 610 - Medicine & health |
| hierarchy_top_title |
Soil and water bioengineering: Practice and research needs for reconciling natural hazard control and ecological restoration |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)ELV000899798 |
| title |
Vacancy-induced resistive switching and synaptic behavior in flexible BSTCf memristor crossbars |
| ctrlnum |
(DE-627)ELV050959786 (ELSEVIER)S0272-8842(20)31576-5 |
| title_full |
Vacancy-induced resistive switching and synaptic behavior in flexible BSTCf memristor crossbars |
| author_sort |
Wang, Ze |
| journal |
Soil and water bioengineering: Practice and research needs for reconciling natural hazard control and ecological restoration |
| journalStr |
Soil and water bioengineering: Practice and research needs for reconciling natural hazard control and ecological restoration |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
300 - Social sciences 600 - Technology |
| recordtype |
marc |
| publishDateSort |
2020 |
| contenttype_str_mv |
zzz |
| container_start_page |
21569 |
| author_browse |
Wang, Ze |
| container_volume |
46 |
| physical |
9 |
| class |
333.7 610 VZ 43.12 bkl 43.13 bkl 44.13 bkl |
| format_se |
Elektronische Aufsätze |
| author-letter |
Wang, Ze |
| doi_str_mv |
10.1016/j.ceramint.2020.05.262 |
| dewey-full |
333.7 610 |
| title_sort |
vacancy-induced resistive switching and synaptic behavior in flexible bstcf memristor crossbars |
| title_auth |
Vacancy-induced resistive switching and synaptic behavior in flexible BSTCf memristor crossbars |
| abstract |
In this study, carbon fibers (Cf) coated with Ba0 . 6Sr0 . 4TiO3 (BST) (BSTCf) were prepared by magnetron sputtering and subsequently heated in nitrogen to produce oxygen vacancies. BST@Cf and nitrogen-treated BST@Cf were cross-stacked on polyimide (PI) film to make a BST@Cf memristor. The electrical properties of BST@Cf memristor were measured after being bent 3000 times. The device exhibits bipolar figure-of-eight (f8) hysteresis loop characteristics under applied voltage. The hysteresis loops narrow with increasing temperature of heat treatment in nitrogen, due to decrease in oxygen vacancy concentration. The hysteresis loops demonstrate the switching process of resistance between high resistance state (HRS) and low resistance state (LRS), with a maximum HRS/LRS ratio of 106. The switching process can be divided into two parts, corresponding to Schottky Emission and Fowler-Nordheim (F–N) Tunneling. It is notable that no electroforming voltage is required to stimulate the memristor. The constructed memristor was cycled successfully 1000 times and retained the LRS 787 s during power cut off. In addition, the device exhibited synaptic behavior including learning and forgetting processes, in accordance with the paired-pulse facilitation (PPF) rule. The use of BST@Cf in the construction of the nonvolatile memristor imparts flexibility to the device allowing for the possibility of wearable flexible intelligent memristor based electronic devices in the future. |
| abstractGer |
In this study, carbon fibers (Cf) coated with Ba0 . 6Sr0 . 4TiO3 (BST) (BSTCf) were prepared by magnetron sputtering and subsequently heated in nitrogen to produce oxygen vacancies. BST@Cf and nitrogen-treated BST@Cf were cross-stacked on polyimide (PI) film to make a BST@Cf memristor. The electrical properties of BST@Cf memristor were measured after being bent 3000 times. The device exhibits bipolar figure-of-eight (f8) hysteresis loop characteristics under applied voltage. The hysteresis loops narrow with increasing temperature of heat treatment in nitrogen, due to decrease in oxygen vacancy concentration. The hysteresis loops demonstrate the switching process of resistance between high resistance state (HRS) and low resistance state (LRS), with a maximum HRS/LRS ratio of 106. The switching process can be divided into two parts, corresponding to Schottky Emission and Fowler-Nordheim (F–N) Tunneling. It is notable that no electroforming voltage is required to stimulate the memristor. The constructed memristor was cycled successfully 1000 times and retained the LRS 787 s during power cut off. In addition, the device exhibited synaptic behavior including learning and forgetting processes, in accordance with the paired-pulse facilitation (PPF) rule. The use of BST@Cf in the construction of the nonvolatile memristor imparts flexibility to the device allowing for the possibility of wearable flexible intelligent memristor based electronic devices in the future. |
| abstract_unstemmed |
In this study, carbon fibers (Cf) coated with Ba0 . 6Sr0 . 4TiO3 (BST) (BSTCf) were prepared by magnetron sputtering and subsequently heated in nitrogen to produce oxygen vacancies. BST@Cf and nitrogen-treated BST@Cf were cross-stacked on polyimide (PI) film to make a BST@Cf memristor. The electrical properties of BST@Cf memristor were measured after being bent 3000 times. The device exhibits bipolar figure-of-eight (f8) hysteresis loop characteristics under applied voltage. The hysteresis loops narrow with increasing temperature of heat treatment in nitrogen, due to decrease in oxygen vacancy concentration. The hysteresis loops demonstrate the switching process of resistance between high resistance state (HRS) and low resistance state (LRS), with a maximum HRS/LRS ratio of 106. The switching process can be divided into two parts, corresponding to Schottky Emission and Fowler-Nordheim (F–N) Tunneling. It is notable that no electroforming voltage is required to stimulate the memristor. The constructed memristor was cycled successfully 1000 times and retained the LRS 787 s during power cut off. In addition, the device exhibited synaptic behavior including learning and forgetting processes, in accordance with the paired-pulse facilitation (PPF) rule. The use of BST@Cf in the construction of the nonvolatile memristor imparts flexibility to the device allowing for the possibility of wearable flexible intelligent memristor based electronic devices in the future. |
| collection_details |
GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA SSG-OPC-GGO |
| container_issue |
13 |
| title_short |
Vacancy-induced resistive switching and synaptic behavior in flexible BSTCf memristor crossbars |
| url |
https://doi.org/10.1016/j.ceramint.2020.05.262 |
| remote_bool |
true |
| author2 |
Yue, Jianling Jiang, Chao Abrahams, Isaac Yu, Yantao Li, Yunxin Du, Zuojuan Huang, Xiaozhong Li, Linling Wang, Guangyuan Zhou, Hao |
| author2Str |
Yue, Jianling Jiang, Chao Abrahams, Isaac Yu, Yantao Li, Yunxin Du, Zuojuan Huang, Xiaozhong Li, Linling Wang, Guangyuan Zhou, Hao |
| ppnlink |
ELV000899798 |
| mediatype_str_mv |
z |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| author2_role |
oth oth oth oth oth oth oth oth oth oth |
| doi_str |
10.1016/j.ceramint.2020.05.262 |
| up_date |
2024-07-06T18:56:09.235Z |
| _version_ |
1803857081648807936 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV050959786</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230626031353.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">210910s2020 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.ceramint.2020.05.262</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">/cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001090.pica</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV050959786</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S0272-8842(20)31576-5</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">333.7</subfield><subfield code="a">610</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">43.12</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">43.13</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">44.13</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Wang, Ze</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Vacancy-induced resistive switching and synaptic behavior in flexible BSTCf memristor crossbars</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2020transfer abstract</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">9</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">In this study, carbon fibers (Cf) coated with Ba0 . 6Sr0 . 4TiO3 (BST) (BSTCf) were prepared by magnetron sputtering and subsequently heated in nitrogen to produce oxygen vacancies. BST@Cf and nitrogen-treated BST@Cf were cross-stacked on polyimide (PI) film to make a BST@Cf memristor. The electrical properties of BST@Cf memristor were measured after being bent 3000 times. The device exhibits bipolar figure-of-eight (f8) hysteresis loop characteristics under applied voltage. The hysteresis loops narrow with increasing temperature of heat treatment in nitrogen, due to decrease in oxygen vacancy concentration. The hysteresis loops demonstrate the switching process of resistance between high resistance state (HRS) and low resistance state (LRS), with a maximum HRS/LRS ratio of 106. The switching process can be divided into two parts, corresponding to Schottky Emission and Fowler-Nordheim (F–N) Tunneling. It is notable that no electroforming voltage is required to stimulate the memristor. The constructed memristor was cycled successfully 1000 times and retained the LRS 787 s during power cut off. In addition, the device exhibited synaptic behavior including learning and forgetting processes, in accordance with the paired-pulse facilitation (PPF) rule. The use of BST@Cf in the construction of the nonvolatile memristor imparts flexibility to the device allowing for the possibility of wearable flexible intelligent memristor based electronic devices in the future.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">In this study, carbon fibers (Cf) coated with Ba0 . 6Sr0 . 4TiO3 (BST) (BSTCf) were prepared by magnetron sputtering and subsequently heated in nitrogen to produce oxygen vacancies. BST@Cf and nitrogen-treated BST@Cf were cross-stacked on polyimide (PI) film to make a BST@Cf memristor. The electrical properties of BST@Cf memristor were measured after being bent 3000 times. The device exhibits bipolar figure-of-eight (f8) hysteresis loop characteristics under applied voltage. The hysteresis loops narrow with increasing temperature of heat treatment in nitrogen, due to decrease in oxygen vacancy concentration. The hysteresis loops demonstrate the switching process of resistance between high resistance state (HRS) and low resistance state (LRS), with a maximum HRS/LRS ratio of 106. The switching process can be divided into two parts, corresponding to Schottky Emission and Fowler-Nordheim (F–N) Tunneling. It is notable that no electroforming voltage is required to stimulate the memristor. The constructed memristor was cycled successfully 1000 times and retained the LRS 787 s during power cut off. In addition, the device exhibited synaptic behavior including learning and forgetting processes, in accordance with the paired-pulse facilitation (PPF) rule. The use of BST@Cf in the construction of the nonvolatile memristor imparts flexibility to the device allowing for the possibility of wearable flexible intelligent memristor based electronic devices in the future.</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">No electroforming voltage</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Synaptic behavior</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Flexible memristor</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Barium strontium titanate</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Carbon fiber</subfield><subfield code="2">Elsevier</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Yue, Jianling</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Jiang, Chao</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Abrahams, Isaac</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Yu, Yantao</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Li, Yunxin</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Du, Zuojuan</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Huang, Xiaozhong</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Li, Linling</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wang, Guangyuan</subfield><subfield code="4">oth</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zhou, Hao</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="n">Elsevier Science</subfield><subfield code="a">Rey, F. ELSEVIER</subfield><subfield code="t">Soil and water bioengineering: Practice and research needs for reconciling natural hazard control and ecological restoration</subfield><subfield code="d">2018</subfield><subfield code="g">Amsterdam [u.a.]</subfield><subfield code="w">(DE-627)ELV000899798</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:46</subfield><subfield code="g">year:2020</subfield><subfield code="g">number:13</subfield><subfield code="g">pages:21569-21577</subfield><subfield code="g">extent:9</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1016/j.ceramint.2020.05.262</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHA</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OPC-GGO</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">43.12</subfield><subfield code="j">Umweltchemie</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">43.13</subfield><subfield code="j">Umwelttoxikologie</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">44.13</subfield><subfield code="j">Medizinische Ökologie</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">46</subfield><subfield code="j">2020</subfield><subfield code="e">13</subfield><subfield code="h">21569-21577</subfield><subfield code="g">9</subfield></datafield></record></collection>
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