Defects and microstructure of highly conducting Al-doped ZnO ceramics obtained via spark plasma sintering
• Al-doped ZnO have been sintered via SPS. • Highly conductive Al-doped ZnO ceramics have been obtained (3.0 × 105 S/m) • Detailed explorations of defects and microstructures have been conducted by various measurements. • The defect complexes AlZn-Zni were proposed to be responsible for the high ele...
Ausführliche Beschreibung
Autor*in: |
Chen, Haoxian [verfasserIn] |
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Format: |
E-Artikel |
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Sprache: |
Englisch |
Erschienen: |
2020 |
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Schlagwörter: |
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Umfang: |
6 |
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Übergeordnetes Werk: |
Enthalten in: Improved differential evolution for RSSD-based localization in Gaussian mixture noise - Zhang, Yuanyuan ELSEVIER, 2023, Amsterdam [u.a.] |
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Übergeordnetes Werk: |
volume:40 ; year:2020 ; number:15 ; pages:5529-5534 ; extent:6 |
Links: |
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DOI / URN: |
10.1016/j.jeurceramsoc.2020.06.030 |
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10.1016/j.jeurceramsoc.2020.06.030 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001229.pica (DE-627)ELV051074702 (ELSEVIER)S0955-2219(20)30489-1 DE-627 ger DE-627 rakwb eng 004 VZ 54.00 bkl Chen, Haoxian verfasserin aut Defects and microstructure of highly conducting Al-doped ZnO ceramics obtained via spark plasma sintering 2020 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier • Al-doped ZnO have been sintered via SPS. • Highly conductive Al-doped ZnO ceramics have been obtained (3.0 × 105 S/m) • Detailed explorations of defects and microstructures have been conducted by various measurements. • The defect complexes AlZn-Zni were proposed to be responsible for the high electrical conductivity. SPS Elsevier AlZn-Zni complex Elsevier High conductivity Elsevier Al-doped Elsevier ZnO ceramic Elsevier Sun, Qianying oth Tian, Tian oth Zheng, Liaoying oth Barré, Maud oth Monot-Laffez, Isabelle oth Makowska-Janusik, Małgorzata oth Li, Guorong oth Kassiba, Abdel Hadi oth Enthalten in Elsevier Science Zhang, Yuanyuan ELSEVIER Improved differential evolution for RSSD-based localization in Gaussian mixture noise 2023 Amsterdam [u.a.] (DE-627)ELV009961755 volume:40 year:2020 number:15 pages:5529-5534 extent:6 https://doi.org/10.1016/j.jeurceramsoc.2020.06.030 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 54.00 Informatik: Allgemeines VZ AR 40 2020 15 5529-5534 6 |
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10.1016/j.jeurceramsoc.2020.06.030 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001229.pica (DE-627)ELV051074702 (ELSEVIER)S0955-2219(20)30489-1 DE-627 ger DE-627 rakwb eng 004 VZ 54.00 bkl Chen, Haoxian verfasserin aut Defects and microstructure of highly conducting Al-doped ZnO ceramics obtained via spark plasma sintering 2020 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier • Al-doped ZnO have been sintered via SPS. • Highly conductive Al-doped ZnO ceramics have been obtained (3.0 × 105 S/m) • Detailed explorations of defects and microstructures have been conducted by various measurements. • The defect complexes AlZn-Zni were proposed to be responsible for the high electrical conductivity. SPS Elsevier AlZn-Zni complex Elsevier High conductivity Elsevier Al-doped Elsevier ZnO ceramic Elsevier Sun, Qianying oth Tian, Tian oth Zheng, Liaoying oth Barré, Maud oth Monot-Laffez, Isabelle oth Makowska-Janusik, Małgorzata oth Li, Guorong oth Kassiba, Abdel Hadi oth Enthalten in Elsevier Science Zhang, Yuanyuan ELSEVIER Improved differential evolution for RSSD-based localization in Gaussian mixture noise 2023 Amsterdam [u.a.] (DE-627)ELV009961755 volume:40 year:2020 number:15 pages:5529-5534 extent:6 https://doi.org/10.1016/j.jeurceramsoc.2020.06.030 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 54.00 Informatik: Allgemeines VZ AR 40 2020 15 5529-5534 6 |
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10.1016/j.jeurceramsoc.2020.06.030 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001229.pica (DE-627)ELV051074702 (ELSEVIER)S0955-2219(20)30489-1 DE-627 ger DE-627 rakwb eng 004 VZ 54.00 bkl Chen, Haoxian verfasserin aut Defects and microstructure of highly conducting Al-doped ZnO ceramics obtained via spark plasma sintering 2020 6 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier • Al-doped ZnO have been sintered via SPS. • Highly conductive Al-doped ZnO ceramics have been obtained (3.0 × 105 S/m) • Detailed explorations of defects and microstructures have been conducted by various measurements. • The defect complexes AlZn-Zni were proposed to be responsible for the high electrical conductivity. SPS Elsevier AlZn-Zni complex Elsevier High conductivity Elsevier Al-doped Elsevier ZnO ceramic Elsevier Sun, Qianying oth Tian, Tian oth Zheng, Liaoying oth Barré, Maud oth Monot-Laffez, Isabelle oth Makowska-Janusik, Małgorzata oth Li, Guorong oth Kassiba, Abdel Hadi oth Enthalten in Elsevier Science Zhang, Yuanyuan ELSEVIER Improved differential evolution for RSSD-based localization in Gaussian mixture noise 2023 Amsterdam [u.a.] (DE-627)ELV009961755 volume:40 year:2020 number:15 pages:5529-5534 extent:6 https://doi.org/10.1016/j.jeurceramsoc.2020.06.030 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 54.00 Informatik: Allgemeines VZ AR 40 2020 15 5529-5534 6 |
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Defects and microstructure of highly conducting Al-doped ZnO ceramics obtained via spark plasma sintering |
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• Al-doped ZnO have been sintered via SPS. • Highly conductive Al-doped ZnO ceramics have been obtained (3.0 × 105 S/m) • Detailed explorations of defects and microstructures have been conducted by various measurements. • The defect complexes AlZn-Zni were proposed to be responsible for the high electrical conductivity. |
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• Al-doped ZnO have been sintered via SPS. • Highly conductive Al-doped ZnO ceramics have been obtained (3.0 × 105 S/m) • Detailed explorations of defects and microstructures have been conducted by various measurements. • The defect complexes AlZn-Zni were proposed to be responsible for the high electrical conductivity. |
abstract_unstemmed |
• Al-doped ZnO have been sintered via SPS. • Highly conductive Al-doped ZnO ceramics have been obtained (3.0 × 105 S/m) • Detailed explorations of defects and microstructures have been conducted by various measurements. • The defect complexes AlZn-Zni were proposed to be responsible for the high electrical conductivity. |
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