Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers
The electrical properties and deep trap spectra were compared for near-UV GaN/InGaN quantum well (QW) structures grown on free-standing GaN substrates. The structures differed by the presence or absence of a thin (110 nm) InGaN layer inserted between the high temperature GaN buffer and the QW region...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Polyakov, A.Y. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2020transfer abstract |
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| Übergeordnetes Werk: |
Enthalten in: Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners - Jacobs, Jacquelyn A. ELSEVIER, 2017, JAL : an interdisciplinary journal of materials science and solid-state chemistry and physics, Lausanne |
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| Übergeordnetes Werk: |
volume:845 ; year:2020 ; day:10 ; month:12 ; pages:0 |
| Links: |
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| DOI / URN: |
10.1016/j.jallcom.2020.156269 |
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ELV051149893 |
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| 245 | 1 | 0 | |a Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers |
| 264 | 1 | |c 2020transfer abstract | |
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| 520 | |a The electrical properties and deep trap spectra were compared for near-UV GaN/InGaN quantum well (QW) structures grown on free-standing GaN substrates. The structures differed by the presence or absence of a thin (110 nm) InGaN layer inserted between the high temperature GaN buffer and the QW region. Capacitance-voltage profiling with monochromatic illumination showed that in the InGaN underlayer (UL), the density of deep traps with optical threshold near 1.5 eV was much higher than in the QW and higher than for structures without InGaN. Irradiation with 5 MeV electrons strongly increased the concentration of these 1.5 eV traps in the QWs, with the increase more pronounced for samples without InGaN ULs. The observations are interpreted using the earlier proposed model explaining the impact of In-containing underlayers by segregation of native defects formed during growth of GaN near the surface and trapping of these surface defects by In atoms of the InGaN UL, thus preventing them from infiltrating the InGaN QW region. Deep level transient spectroscopy (DLTS) also revealed major differences in deep trap spectra in the QWs and underlying layers of the samples with and without InGaN ULs. Specifically, the introduction of the InGaN UL stimulates changing the dominant type of deep traps. Irradiation increases the densities of these traps, with the increase being more pronounced for samples without the InGaN UL. It is argued that light emitting diodes (LEDs) with InGaN UL should demonstrate a higher radiation tolerance than LEDs without InGaN UL. | ||
| 520 | |a The electrical properties and deep trap spectra were compared for near-UV GaN/InGaN quantum well (QW) structures grown on free-standing GaN substrates. The structures differed by the presence or absence of a thin (110 nm) InGaN layer inserted between the high temperature GaN buffer and the QW region. Capacitance-voltage profiling with monochromatic illumination showed that in the InGaN underlayer (UL), the density of deep traps with optical threshold near 1.5 eV was much higher than in the QW and higher than for structures without InGaN. Irradiation with 5 MeV electrons strongly increased the concentration of these 1.5 eV traps in the QWs, with the increase more pronounced for samples without InGaN ULs. The observations are interpreted using the earlier proposed model explaining the impact of In-containing underlayers by segregation of native defects formed during growth of GaN near the surface and trapping of these surface defects by In atoms of the InGaN UL, thus preventing them from infiltrating the InGaN QW region. Deep level transient spectroscopy (DLTS) also revealed major differences in deep trap spectra in the QWs and underlying layers of the samples with and without InGaN ULs. Specifically, the introduction of the InGaN UL stimulates changing the dominant type of deep traps. Irradiation increases the densities of these traps, with the increase being more pronounced for samples without the InGaN UL. It is argued that light emitting diodes (LEDs) with InGaN UL should demonstrate a higher radiation tolerance than LEDs without InGaN UL. | ||
| 700 | 1 | |a Haller, C. |4 oth | |
| 700 | 1 | |a Butté, R. |4 oth | |
| 700 | 1 | |a Smirnov, N.B. |4 oth | |
| 700 | 1 | |a Alexanyan, L.A. |4 oth | |
| 700 | 1 | |a Kochkova, A.I. |4 oth | |
| 700 | 1 | |a Shikoh, S.A. |4 oth | |
| 700 | 1 | |a Shchemerov, I.V. |4 oth | |
| 700 | 1 | |a Chernykh, A.V. |4 oth | |
| 700 | 1 | |a Lagov, P.B. |4 oth | |
| 700 | 1 | |a Pavlov, Yu S. |4 oth | |
| 700 | 1 | |a Carlin, J.-F. |4 oth | |
| 700 | 1 | |a Mosca, M. |4 oth | |
| 700 | 1 | |a Grandjean, N. |4 oth | |
| 700 | 1 | |a Pearton, S.J. |4 oth | |
| 773 | 0 | 8 | |i Enthalten in |n Elsevier |a Jacobs, Jacquelyn A. ELSEVIER |t Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners |d 2017 |d JAL : an interdisciplinary journal of materials science and solid-state chemistry and physics |g Lausanne |w (DE-627)ELV001115774 |
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| 856 | 4 | 0 | |u https://doi.org/10.1016/j.jallcom.2020.156269 |3 Volltext |
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10.1016/j.jallcom.2020.156269 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001268.pica (DE-627)ELV051149893 (ELSEVIER)S0925-8388(20)32633-5 DE-627 ger DE-627 rakwb eng 630 VZ Polyakov, A.Y. verfasserin aut Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers 2020transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The electrical properties and deep trap spectra were compared for near-UV GaN/InGaN quantum well (QW) structures grown on free-standing GaN substrates. The structures differed by the presence or absence of a thin (110 nm) InGaN layer inserted between the high temperature GaN buffer and the QW region. Capacitance-voltage profiling with monochromatic illumination showed that in the InGaN underlayer (UL), the density of deep traps with optical threshold near 1.5 eV was much higher than in the QW and higher than for structures without InGaN. Irradiation with 5 MeV electrons strongly increased the concentration of these 1.5 eV traps in the QWs, with the increase more pronounced for samples without InGaN ULs. The observations are interpreted using the earlier proposed model explaining the impact of In-containing underlayers by segregation of native defects formed during growth of GaN near the surface and trapping of these surface defects by In atoms of the InGaN UL, thus preventing them from infiltrating the InGaN QW region. Deep level transient spectroscopy (DLTS) also revealed major differences in deep trap spectra in the QWs and underlying layers of the samples with and without InGaN ULs. Specifically, the introduction of the InGaN UL stimulates changing the dominant type of deep traps. Irradiation increases the densities of these traps, with the increase being more pronounced for samples without the InGaN UL. It is argued that light emitting diodes (LEDs) with InGaN UL should demonstrate a higher radiation tolerance than LEDs without InGaN UL. The electrical properties and deep trap spectra were compared for near-UV GaN/InGaN quantum well (QW) structures grown on free-standing GaN substrates. The structures differed by the presence or absence of a thin (110 nm) InGaN layer inserted between the high temperature GaN buffer and the QW region. Capacitance-voltage profiling with monochromatic illumination showed that in the InGaN underlayer (UL), the density of deep traps with optical threshold near 1.5 eV was much higher than in the QW and higher than for structures without InGaN. Irradiation with 5 MeV electrons strongly increased the concentration of these 1.5 eV traps in the QWs, with the increase more pronounced for samples without InGaN ULs. The observations are interpreted using the earlier proposed model explaining the impact of In-containing underlayers by segregation of native defects formed during growth of GaN near the surface and trapping of these surface defects by In atoms of the InGaN UL, thus preventing them from infiltrating the InGaN QW region. Deep level transient spectroscopy (DLTS) also revealed major differences in deep trap spectra in the QWs and underlying layers of the samples with and without InGaN ULs. Specifically, the introduction of the InGaN UL stimulates changing the dominant type of deep traps. Irradiation increases the densities of these traps, with the increase being more pronounced for samples without the InGaN UL. It is argued that light emitting diodes (LEDs) with InGaN UL should demonstrate a higher radiation tolerance than LEDs without InGaN UL. Haller, C. oth Butté, R. oth Smirnov, N.B. oth Alexanyan, L.A. oth Kochkova, A.I. oth Shikoh, S.A. oth Shchemerov, I.V. oth Chernykh, A.V. oth Lagov, P.B. oth Pavlov, Yu S. oth Carlin, J.-F. oth Mosca, M. oth Grandjean, N. oth Pearton, S.J. oth Enthalten in Elsevier Jacobs, Jacquelyn A. ELSEVIER Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners 2017 JAL : an interdisciplinary journal of materials science and solid-state chemistry and physics Lausanne (DE-627)ELV001115774 volume:845 year:2020 day:10 month:12 pages:0 https://doi.org/10.1016/j.jallcom.2020.156269 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA AR 845 2020 10 1210 0 |
| spelling |
10.1016/j.jallcom.2020.156269 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001268.pica (DE-627)ELV051149893 (ELSEVIER)S0925-8388(20)32633-5 DE-627 ger DE-627 rakwb eng 630 VZ Polyakov, A.Y. verfasserin aut Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers 2020transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The electrical properties and deep trap spectra were compared for near-UV GaN/InGaN quantum well (QW) structures grown on free-standing GaN substrates. The structures differed by the presence or absence of a thin (110 nm) InGaN layer inserted between the high temperature GaN buffer and the QW region. Capacitance-voltage profiling with monochromatic illumination showed that in the InGaN underlayer (UL), the density of deep traps with optical threshold near 1.5 eV was much higher than in the QW and higher than for structures without InGaN. Irradiation with 5 MeV electrons strongly increased the concentration of these 1.5 eV traps in the QWs, with the increase more pronounced for samples without InGaN ULs. The observations are interpreted using the earlier proposed model explaining the impact of In-containing underlayers by segregation of native defects formed during growth of GaN near the surface and trapping of these surface defects by In atoms of the InGaN UL, thus preventing them from infiltrating the InGaN QW region. Deep level transient spectroscopy (DLTS) also revealed major differences in deep trap spectra in the QWs and underlying layers of the samples with and without InGaN ULs. Specifically, the introduction of the InGaN UL stimulates changing the dominant type of deep traps. Irradiation increases the densities of these traps, with the increase being more pronounced for samples without the InGaN UL. It is argued that light emitting diodes (LEDs) with InGaN UL should demonstrate a higher radiation tolerance than LEDs without InGaN UL. The electrical properties and deep trap spectra were compared for near-UV GaN/InGaN quantum well (QW) structures grown on free-standing GaN substrates. The structures differed by the presence or absence of a thin (110 nm) InGaN layer inserted between the high temperature GaN buffer and the QW region. Capacitance-voltage profiling with monochromatic illumination showed that in the InGaN underlayer (UL), the density of deep traps with optical threshold near 1.5 eV was much higher than in the QW and higher than for structures without InGaN. Irradiation with 5 MeV electrons strongly increased the concentration of these 1.5 eV traps in the QWs, with the increase more pronounced for samples without InGaN ULs. The observations are interpreted using the earlier proposed model explaining the impact of In-containing underlayers by segregation of native defects formed during growth of GaN near the surface and trapping of these surface defects by In atoms of the InGaN UL, thus preventing them from infiltrating the InGaN QW region. Deep level transient spectroscopy (DLTS) also revealed major differences in deep trap spectra in the QWs and underlying layers of the samples with and without InGaN ULs. Specifically, the introduction of the InGaN UL stimulates changing the dominant type of deep traps. Irradiation increases the densities of these traps, with the increase being more pronounced for samples without the InGaN UL. It is argued that light emitting diodes (LEDs) with InGaN UL should demonstrate a higher radiation tolerance than LEDs without InGaN UL. Haller, C. oth Butté, R. oth Smirnov, N.B. oth Alexanyan, L.A. oth Kochkova, A.I. oth Shikoh, S.A. oth Shchemerov, I.V. oth Chernykh, A.V. oth Lagov, P.B. oth Pavlov, Yu S. oth Carlin, J.-F. oth Mosca, M. oth Grandjean, N. oth Pearton, S.J. oth Enthalten in Elsevier Jacobs, Jacquelyn A. ELSEVIER Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners 2017 JAL : an interdisciplinary journal of materials science and solid-state chemistry and physics Lausanne (DE-627)ELV001115774 volume:845 year:2020 day:10 month:12 pages:0 https://doi.org/10.1016/j.jallcom.2020.156269 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA AR 845 2020 10 1210 0 |
| allfields_unstemmed |
10.1016/j.jallcom.2020.156269 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001268.pica (DE-627)ELV051149893 (ELSEVIER)S0925-8388(20)32633-5 DE-627 ger DE-627 rakwb eng 630 VZ Polyakov, A.Y. verfasserin aut Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers 2020transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The electrical properties and deep trap spectra were compared for near-UV GaN/InGaN quantum well (QW) structures grown on free-standing GaN substrates. The structures differed by the presence or absence of a thin (110 nm) InGaN layer inserted between the high temperature GaN buffer and the QW region. Capacitance-voltage profiling with monochromatic illumination showed that in the InGaN underlayer (UL), the density of deep traps with optical threshold near 1.5 eV was much higher than in the QW and higher than for structures without InGaN. Irradiation with 5 MeV electrons strongly increased the concentration of these 1.5 eV traps in the QWs, with the increase more pronounced for samples without InGaN ULs. The observations are interpreted using the earlier proposed model explaining the impact of In-containing underlayers by segregation of native defects formed during growth of GaN near the surface and trapping of these surface defects by In atoms of the InGaN UL, thus preventing them from infiltrating the InGaN QW region. Deep level transient spectroscopy (DLTS) also revealed major differences in deep trap spectra in the QWs and underlying layers of the samples with and without InGaN ULs. Specifically, the introduction of the InGaN UL stimulates changing the dominant type of deep traps. Irradiation increases the densities of these traps, with the increase being more pronounced for samples without the InGaN UL. It is argued that light emitting diodes (LEDs) with InGaN UL should demonstrate a higher radiation tolerance than LEDs without InGaN UL. The electrical properties and deep trap spectra were compared for near-UV GaN/InGaN quantum well (QW) structures grown on free-standing GaN substrates. The structures differed by the presence or absence of a thin (110 nm) InGaN layer inserted between the high temperature GaN buffer and the QW region. Capacitance-voltage profiling with monochromatic illumination showed that in the InGaN underlayer (UL), the density of deep traps with optical threshold near 1.5 eV was much higher than in the QW and higher than for structures without InGaN. Irradiation with 5 MeV electrons strongly increased the concentration of these 1.5 eV traps in the QWs, with the increase more pronounced for samples without InGaN ULs. The observations are interpreted using the earlier proposed model explaining the impact of In-containing underlayers by segregation of native defects formed during growth of GaN near the surface and trapping of these surface defects by In atoms of the InGaN UL, thus preventing them from infiltrating the InGaN QW region. Deep level transient spectroscopy (DLTS) also revealed major differences in deep trap spectra in the QWs and underlying layers of the samples with and without InGaN ULs. Specifically, the introduction of the InGaN UL stimulates changing the dominant type of deep traps. Irradiation increases the densities of these traps, with the increase being more pronounced for samples without the InGaN UL. It is argued that light emitting diodes (LEDs) with InGaN UL should demonstrate a higher radiation tolerance than LEDs without InGaN UL. Haller, C. oth Butté, R. oth Smirnov, N.B. oth Alexanyan, L.A. oth Kochkova, A.I. oth Shikoh, S.A. oth Shchemerov, I.V. oth Chernykh, A.V. oth Lagov, P.B. oth Pavlov, Yu S. oth Carlin, J.-F. oth Mosca, M. oth Grandjean, N. oth Pearton, S.J. oth Enthalten in Elsevier Jacobs, Jacquelyn A. ELSEVIER Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners 2017 JAL : an interdisciplinary journal of materials science and solid-state chemistry and physics Lausanne (DE-627)ELV001115774 volume:845 year:2020 day:10 month:12 pages:0 https://doi.org/10.1016/j.jallcom.2020.156269 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA AR 845 2020 10 1210 0 |
| allfieldsGer |
10.1016/j.jallcom.2020.156269 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001268.pica (DE-627)ELV051149893 (ELSEVIER)S0925-8388(20)32633-5 DE-627 ger DE-627 rakwb eng 630 VZ Polyakov, A.Y. verfasserin aut Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers 2020transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The electrical properties and deep trap spectra were compared for near-UV GaN/InGaN quantum well (QW) structures grown on free-standing GaN substrates. The structures differed by the presence or absence of a thin (110 nm) InGaN layer inserted between the high temperature GaN buffer and the QW region. Capacitance-voltage profiling with monochromatic illumination showed that in the InGaN underlayer (UL), the density of deep traps with optical threshold near 1.5 eV was much higher than in the QW and higher than for structures without InGaN. Irradiation with 5 MeV electrons strongly increased the concentration of these 1.5 eV traps in the QWs, with the increase more pronounced for samples without InGaN ULs. The observations are interpreted using the earlier proposed model explaining the impact of In-containing underlayers by segregation of native defects formed during growth of GaN near the surface and trapping of these surface defects by In atoms of the InGaN UL, thus preventing them from infiltrating the InGaN QW region. Deep level transient spectroscopy (DLTS) also revealed major differences in deep trap spectra in the QWs and underlying layers of the samples with and without InGaN ULs. Specifically, the introduction of the InGaN UL stimulates changing the dominant type of deep traps. Irradiation increases the densities of these traps, with the increase being more pronounced for samples without the InGaN UL. It is argued that light emitting diodes (LEDs) with InGaN UL should demonstrate a higher radiation tolerance than LEDs without InGaN UL. The electrical properties and deep trap spectra were compared for near-UV GaN/InGaN quantum well (QW) structures grown on free-standing GaN substrates. The structures differed by the presence or absence of a thin (110 nm) InGaN layer inserted between the high temperature GaN buffer and the QW region. Capacitance-voltage profiling with monochromatic illumination showed that in the InGaN underlayer (UL), the density of deep traps with optical threshold near 1.5 eV was much higher than in the QW and higher than for structures without InGaN. Irradiation with 5 MeV electrons strongly increased the concentration of these 1.5 eV traps in the QWs, with the increase more pronounced for samples without InGaN ULs. The observations are interpreted using the earlier proposed model explaining the impact of In-containing underlayers by segregation of native defects formed during growth of GaN near the surface and trapping of these surface defects by In atoms of the InGaN UL, thus preventing them from infiltrating the InGaN QW region. Deep level transient spectroscopy (DLTS) also revealed major differences in deep trap spectra in the QWs and underlying layers of the samples with and without InGaN ULs. Specifically, the introduction of the InGaN UL stimulates changing the dominant type of deep traps. Irradiation increases the densities of these traps, with the increase being more pronounced for samples without the InGaN UL. It is argued that light emitting diodes (LEDs) with InGaN UL should demonstrate a higher radiation tolerance than LEDs without InGaN UL. Haller, C. oth Butté, R. oth Smirnov, N.B. oth Alexanyan, L.A. oth Kochkova, A.I. oth Shikoh, S.A. oth Shchemerov, I.V. oth Chernykh, A.V. oth Lagov, P.B. oth Pavlov, Yu S. oth Carlin, J.-F. oth Mosca, M. oth Grandjean, N. oth Pearton, S.J. oth Enthalten in Elsevier Jacobs, Jacquelyn A. ELSEVIER Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners 2017 JAL : an interdisciplinary journal of materials science and solid-state chemistry and physics Lausanne (DE-627)ELV001115774 volume:845 year:2020 day:10 month:12 pages:0 https://doi.org/10.1016/j.jallcom.2020.156269 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA AR 845 2020 10 1210 0 |
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10.1016/j.jallcom.2020.156269 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001268.pica (DE-627)ELV051149893 (ELSEVIER)S0925-8388(20)32633-5 DE-627 ger DE-627 rakwb eng 630 VZ Polyakov, A.Y. verfasserin aut Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers 2020transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The electrical properties and deep trap spectra were compared for near-UV GaN/InGaN quantum well (QW) structures grown on free-standing GaN substrates. The structures differed by the presence or absence of a thin (110 nm) InGaN layer inserted between the high temperature GaN buffer and the QW region. Capacitance-voltage profiling with monochromatic illumination showed that in the InGaN underlayer (UL), the density of deep traps with optical threshold near 1.5 eV was much higher than in the QW and higher than for structures without InGaN. Irradiation with 5 MeV electrons strongly increased the concentration of these 1.5 eV traps in the QWs, with the increase more pronounced for samples without InGaN ULs. The observations are interpreted using the earlier proposed model explaining the impact of In-containing underlayers by segregation of native defects formed during growth of GaN near the surface and trapping of these surface defects by In atoms of the InGaN UL, thus preventing them from infiltrating the InGaN QW region. Deep level transient spectroscopy (DLTS) also revealed major differences in deep trap spectra in the QWs and underlying layers of the samples with and without InGaN ULs. Specifically, the introduction of the InGaN UL stimulates changing the dominant type of deep traps. Irradiation increases the densities of these traps, with the increase being more pronounced for samples without the InGaN UL. It is argued that light emitting diodes (LEDs) with InGaN UL should demonstrate a higher radiation tolerance than LEDs without InGaN UL. The electrical properties and deep trap spectra were compared for near-UV GaN/InGaN quantum well (QW) structures grown on free-standing GaN substrates. The structures differed by the presence or absence of a thin (110 nm) InGaN layer inserted between the high temperature GaN buffer and the QW region. Capacitance-voltage profiling with monochromatic illumination showed that in the InGaN underlayer (UL), the density of deep traps with optical threshold near 1.5 eV was much higher than in the QW and higher than for structures without InGaN. Irradiation with 5 MeV electrons strongly increased the concentration of these 1.5 eV traps in the QWs, with the increase more pronounced for samples without InGaN ULs. The observations are interpreted using the earlier proposed model explaining the impact of In-containing underlayers by segregation of native defects formed during growth of GaN near the surface and trapping of these surface defects by In atoms of the InGaN UL, thus preventing them from infiltrating the InGaN QW region. Deep level transient spectroscopy (DLTS) also revealed major differences in deep trap spectra in the QWs and underlying layers of the samples with and without InGaN ULs. Specifically, the introduction of the InGaN UL stimulates changing the dominant type of deep traps. Irradiation increases the densities of these traps, with the increase being more pronounced for samples without the InGaN UL. It is argued that light emitting diodes (LEDs) with InGaN UL should demonstrate a higher radiation tolerance than LEDs without InGaN UL. Haller, C. oth Butté, R. oth Smirnov, N.B. oth Alexanyan, L.A. oth Kochkova, A.I. oth Shikoh, S.A. oth Shchemerov, I.V. oth Chernykh, A.V. oth Lagov, P.B. oth Pavlov, Yu S. oth Carlin, J.-F. oth Mosca, M. oth Grandjean, N. oth Pearton, S.J. oth Enthalten in Elsevier Jacobs, Jacquelyn A. ELSEVIER Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners 2017 JAL : an interdisciplinary journal of materials science and solid-state chemistry and physics Lausanne (DE-627)ELV001115774 volume:845 year:2020 day:10 month:12 pages:0 https://doi.org/10.1016/j.jallcom.2020.156269 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA AR 845 2020 10 1210 0 |
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Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers |
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The electrical properties and deep trap spectra were compared for near-UV GaN/InGaN quantum well (QW) structures grown on free-standing GaN substrates. The structures differed by the presence or absence of a thin (110 nm) InGaN layer inserted between the high temperature GaN buffer and the QW region. Capacitance-voltage profiling with monochromatic illumination showed that in the InGaN underlayer (UL), the density of deep traps with optical threshold near 1.5 eV was much higher than in the QW and higher than for structures without InGaN. Irradiation with 5 MeV electrons strongly increased the concentration of these 1.5 eV traps in the QWs, with the increase more pronounced for samples without InGaN ULs. The observations are interpreted using the earlier proposed model explaining the impact of In-containing underlayers by segregation of native defects formed during growth of GaN near the surface and trapping of these surface defects by In atoms of the InGaN UL, thus preventing them from infiltrating the InGaN QW region. Deep level transient spectroscopy (DLTS) also revealed major differences in deep trap spectra in the QWs and underlying layers of the samples with and without InGaN ULs. Specifically, the introduction of the InGaN UL stimulates changing the dominant type of deep traps. Irradiation increases the densities of these traps, with the increase being more pronounced for samples without the InGaN UL. It is argued that light emitting diodes (LEDs) with InGaN UL should demonstrate a higher radiation tolerance than LEDs without InGaN UL. |
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The electrical properties and deep trap spectra were compared for near-UV GaN/InGaN quantum well (QW) structures grown on free-standing GaN substrates. The structures differed by the presence or absence of a thin (110 nm) InGaN layer inserted between the high temperature GaN buffer and the QW region. Capacitance-voltage profiling with monochromatic illumination showed that in the InGaN underlayer (UL), the density of deep traps with optical threshold near 1.5 eV was much higher than in the QW and higher than for structures without InGaN. Irradiation with 5 MeV electrons strongly increased the concentration of these 1.5 eV traps in the QWs, with the increase more pronounced for samples without InGaN ULs. The observations are interpreted using the earlier proposed model explaining the impact of In-containing underlayers by segregation of native defects formed during growth of GaN near the surface and trapping of these surface defects by In atoms of the InGaN UL, thus preventing them from infiltrating the InGaN QW region. Deep level transient spectroscopy (DLTS) also revealed major differences in deep trap spectra in the QWs and underlying layers of the samples with and without InGaN ULs. Specifically, the introduction of the InGaN UL stimulates changing the dominant type of deep traps. Irradiation increases the densities of these traps, with the increase being more pronounced for samples without the InGaN UL. It is argued that light emitting diodes (LEDs) with InGaN UL should demonstrate a higher radiation tolerance than LEDs without InGaN UL. |
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The electrical properties and deep trap spectra were compared for near-UV GaN/InGaN quantum well (QW) structures grown on free-standing GaN substrates. The structures differed by the presence or absence of a thin (110 nm) InGaN layer inserted between the high temperature GaN buffer and the QW region. Capacitance-voltage profiling with monochromatic illumination showed that in the InGaN underlayer (UL), the density of deep traps with optical threshold near 1.5 eV was much higher than in the QW and higher than for structures without InGaN. Irradiation with 5 MeV electrons strongly increased the concentration of these 1.5 eV traps in the QWs, with the increase more pronounced for samples without InGaN ULs. The observations are interpreted using the earlier proposed model explaining the impact of In-containing underlayers by segregation of native defects formed during growth of GaN near the surface and trapping of these surface defects by In atoms of the InGaN UL, thus preventing them from infiltrating the InGaN QW region. Deep level transient spectroscopy (DLTS) also revealed major differences in deep trap spectra in the QWs and underlying layers of the samples with and without InGaN ULs. Specifically, the introduction of the InGaN UL stimulates changing the dominant type of deep traps. Irradiation increases the densities of these traps, with the increase being more pronounced for samples without the InGaN UL. It is argued that light emitting diodes (LEDs) with InGaN UL should demonstrate a higher radiation tolerance than LEDs without InGaN UL. |
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Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers |
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