Coulomb drag study in graphene/GaAs bilayer system with the effect of local field correction and dielectric medium
The drag resistivity is measured numerically for electron-electron (e-e) and electron-hole (e-h) coupled layer system composed of single layer graphene and two-dimensional (2D) GaAs layer separated by a barrier. The system is studied within the model of random phase approximation (RPA) and taking in...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Upadhyay, Sharad Kumar [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2021transfer abstract |
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| Übergeordnetes Werk: |
Enthalten in: Characterization of a 7 bp indel in MARCH1 promoter associated with reproductive traits in Malabari and Attappady Black goats of India - Desai, Akshatha G. ELSEVIER, 2021, Amsterdam [u.a.] |
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| Übergeordnetes Werk: |
volume:127 ; year:2021 ; pages:0 |
| Links: |
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| DOI / URN: |
10.1016/j.physe.2020.114484 |
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| 520 | |a The drag resistivity is measured numerically for electron-electron (e-e) and electron-hole (e-h) coupled layer system composed of single layer graphene and two-dimensional (2D) GaAs layer separated by a barrier. The system is studied within the model of random phase approximation (RPA) and taking into account the static local field correction (LFC) and layer thickness effects in the Ballistic/Boltzmann regime. We have shown analytical expressions of non-linear susceptibility function and effective interlayer Coulomb interaction for non homogeneous dielectric environment at low temperature, high density and large interlayer separation limit. Exchange and correlation effects enhanced the drag resistivity by considering the static local field correction. Width of the layer and interlayer distance dependent local form factors (LFF) are obtained from the solution of the Poisson equation for a multi-layer dielectric medium. The effects of LFC and LFF are the function of bare inter- and intra-layer potential, which enhances the drag resistivity compare to simply measured RPA results. Enhanced drag resistivity also measured for e-h bilayer system where the hole layer is considered for 2D GaAs (drag layer), cause of larger effective mass of hole compare to the electron. Similarly, e-e and e-h bilayer system measured the enhanced drag resistivity due to LFC effects. | ||
| 520 | |a The drag resistivity is measured numerically for electron-electron (e-e) and electron-hole (e-h) coupled layer system composed of single layer graphene and two-dimensional (2D) GaAs layer separated by a barrier. The system is studied within the model of random phase approximation (RPA) and taking into account the static local field correction (LFC) and layer thickness effects in the Ballistic/Boltzmann regime. We have shown analytical expressions of non-linear susceptibility function and effective interlayer Coulomb interaction for non homogeneous dielectric environment at low temperature, high density and large interlayer separation limit. Exchange and correlation effects enhanced the drag resistivity by considering the static local field correction. Width of the layer and interlayer distance dependent local form factors (LFF) are obtained from the solution of the Poisson equation for a multi-layer dielectric medium. The effects of LFC and LFF are the function of bare inter- and intra-layer potential, which enhances the drag resistivity compare to simply measured RPA results. Enhanced drag resistivity also measured for e-h bilayer system where the hole layer is considered for 2D GaAs (drag layer), cause of larger effective mass of hole compare to the electron. Similarly, e-e and e-h bilayer system measured the enhanced drag resistivity due to LFC effects. | ||
| 650 | 7 | |a Dielectric environment |2 Elsevier | |
| 650 | 7 | |a Boltzmann regime |2 Elsevier | |
| 650 | 7 | |a Static interaction |2 Elsevier | |
| 650 | 7 | |a Local field correction |2 Elsevier | |
| 650 | 7 | |a Coulomb drag |2 Elsevier | |
| 700 | 1 | |a Saini, L.K. |4 oth | |
| 773 | 0 | 8 | |i Enthalten in |n North-Holland, Elsevier Science |a Desai, Akshatha G. ELSEVIER |t Characterization of a 7 bp indel in MARCH1 promoter associated with reproductive traits in Malabari and Attappady Black goats of India |d 2021 |g Amsterdam [u.a.] |w (DE-627)ELV006775543 |
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10.1016/j.physe.2020.114484 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001288.pica (DE-627)ELV052594432 (ELSEVIER)S1386-9477(20)31552-6 DE-627 ger DE-627 rakwb eng 630 640 VZ Upadhyay, Sharad Kumar verfasserin aut Coulomb drag study in graphene/GaAs bilayer system with the effect of local field correction and dielectric medium 2021transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The drag resistivity is measured numerically for electron-electron (e-e) and electron-hole (e-h) coupled layer system composed of single layer graphene and two-dimensional (2D) GaAs layer separated by a barrier. The system is studied within the model of random phase approximation (RPA) and taking into account the static local field correction (LFC) and layer thickness effects in the Ballistic/Boltzmann regime. We have shown analytical expressions of non-linear susceptibility function and effective interlayer Coulomb interaction for non homogeneous dielectric environment at low temperature, high density and large interlayer separation limit. Exchange and correlation effects enhanced the drag resistivity by considering the static local field correction. Width of the layer and interlayer distance dependent local form factors (LFF) are obtained from the solution of the Poisson equation for a multi-layer dielectric medium. The effects of LFC and LFF are the function of bare inter- and intra-layer potential, which enhances the drag resistivity compare to simply measured RPA results. Enhanced drag resistivity also measured for e-h bilayer system where the hole layer is considered for 2D GaAs (drag layer), cause of larger effective mass of hole compare to the electron. Similarly, e-e and e-h bilayer system measured the enhanced drag resistivity due to LFC effects. The drag resistivity is measured numerically for electron-electron (e-e) and electron-hole (e-h) coupled layer system composed of single layer graphene and two-dimensional (2D) GaAs layer separated by a barrier. The system is studied within the model of random phase approximation (RPA) and taking into account the static local field correction (LFC) and layer thickness effects in the Ballistic/Boltzmann regime. We have shown analytical expressions of non-linear susceptibility function and effective interlayer Coulomb interaction for non homogeneous dielectric environment at low temperature, high density and large interlayer separation limit. Exchange and correlation effects enhanced the drag resistivity by considering the static local field correction. Width of the layer and interlayer distance dependent local form factors (LFF) are obtained from the solution of the Poisson equation for a multi-layer dielectric medium. The effects of LFC and LFF are the function of bare inter- and intra-layer potential, which enhances the drag resistivity compare to simply measured RPA results. Enhanced drag resistivity also measured for e-h bilayer system where the hole layer is considered for 2D GaAs (drag layer), cause of larger effective mass of hole compare to the electron. Similarly, e-e and e-h bilayer system measured the enhanced drag resistivity due to LFC effects. Dielectric environment Elsevier Boltzmann regime Elsevier Static interaction Elsevier Local field correction Elsevier Coulomb drag Elsevier Saini, L.K. oth Enthalten in North-Holland, Elsevier Science Desai, Akshatha G. ELSEVIER Characterization of a 7 bp indel in MARCH1 promoter associated with reproductive traits in Malabari and Attappady Black goats of India 2021 Amsterdam [u.a.] (DE-627)ELV006775543 volume:127 year:2021 pages:0 https://doi.org/10.1016/j.physe.2020.114484 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U AR 127 2021 0 |
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10.1016/j.physe.2020.114484 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001288.pica (DE-627)ELV052594432 (ELSEVIER)S1386-9477(20)31552-6 DE-627 ger DE-627 rakwb eng 630 640 VZ Upadhyay, Sharad Kumar verfasserin aut Coulomb drag study in graphene/GaAs bilayer system with the effect of local field correction and dielectric medium 2021transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The drag resistivity is measured numerically for electron-electron (e-e) and electron-hole (e-h) coupled layer system composed of single layer graphene and two-dimensional (2D) GaAs layer separated by a barrier. The system is studied within the model of random phase approximation (RPA) and taking into account the static local field correction (LFC) and layer thickness effects in the Ballistic/Boltzmann regime. We have shown analytical expressions of non-linear susceptibility function and effective interlayer Coulomb interaction for non homogeneous dielectric environment at low temperature, high density and large interlayer separation limit. Exchange and correlation effects enhanced the drag resistivity by considering the static local field correction. Width of the layer and interlayer distance dependent local form factors (LFF) are obtained from the solution of the Poisson equation for a multi-layer dielectric medium. The effects of LFC and LFF are the function of bare inter- and intra-layer potential, which enhances the drag resistivity compare to simply measured RPA results. Enhanced drag resistivity also measured for e-h bilayer system where the hole layer is considered for 2D GaAs (drag layer), cause of larger effective mass of hole compare to the electron. Similarly, e-e and e-h bilayer system measured the enhanced drag resistivity due to LFC effects. The drag resistivity is measured numerically for electron-electron (e-e) and electron-hole (e-h) coupled layer system composed of single layer graphene and two-dimensional (2D) GaAs layer separated by a barrier. The system is studied within the model of random phase approximation (RPA) and taking into account the static local field correction (LFC) and layer thickness effects in the Ballistic/Boltzmann regime. We have shown analytical expressions of non-linear susceptibility function and effective interlayer Coulomb interaction for non homogeneous dielectric environment at low temperature, high density and large interlayer separation limit. Exchange and correlation effects enhanced the drag resistivity by considering the static local field correction. Width of the layer and interlayer distance dependent local form factors (LFF) are obtained from the solution of the Poisson equation for a multi-layer dielectric medium. The effects of LFC and LFF are the function of bare inter- and intra-layer potential, which enhances the drag resistivity compare to simply measured RPA results. Enhanced drag resistivity also measured for e-h bilayer system where the hole layer is considered for 2D GaAs (drag layer), cause of larger effective mass of hole compare to the electron. Similarly, e-e and e-h bilayer system measured the enhanced drag resistivity due to LFC effects. Dielectric environment Elsevier Boltzmann regime Elsevier Static interaction Elsevier Local field correction Elsevier Coulomb drag Elsevier Saini, L.K. oth Enthalten in North-Holland, Elsevier Science Desai, Akshatha G. ELSEVIER Characterization of a 7 bp indel in MARCH1 promoter associated with reproductive traits in Malabari and Attappady Black goats of India 2021 Amsterdam [u.a.] (DE-627)ELV006775543 volume:127 year:2021 pages:0 https://doi.org/10.1016/j.physe.2020.114484 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U AR 127 2021 0 |
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10.1016/j.physe.2020.114484 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001288.pica (DE-627)ELV052594432 (ELSEVIER)S1386-9477(20)31552-6 DE-627 ger DE-627 rakwb eng 630 640 VZ Upadhyay, Sharad Kumar verfasserin aut Coulomb drag study in graphene/GaAs bilayer system with the effect of local field correction and dielectric medium 2021transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The drag resistivity is measured numerically for electron-electron (e-e) and electron-hole (e-h) coupled layer system composed of single layer graphene and two-dimensional (2D) GaAs layer separated by a barrier. The system is studied within the model of random phase approximation (RPA) and taking into account the static local field correction (LFC) and layer thickness effects in the Ballistic/Boltzmann regime. We have shown analytical expressions of non-linear susceptibility function and effective interlayer Coulomb interaction for non homogeneous dielectric environment at low temperature, high density and large interlayer separation limit. Exchange and correlation effects enhanced the drag resistivity by considering the static local field correction. Width of the layer and interlayer distance dependent local form factors (LFF) are obtained from the solution of the Poisson equation for a multi-layer dielectric medium. The effects of LFC and LFF are the function of bare inter- and intra-layer potential, which enhances the drag resistivity compare to simply measured RPA results. Enhanced drag resistivity also measured for e-h bilayer system where the hole layer is considered for 2D GaAs (drag layer), cause of larger effective mass of hole compare to the electron. Similarly, e-e and e-h bilayer system measured the enhanced drag resistivity due to LFC effects. The drag resistivity is measured numerically for electron-electron (e-e) and electron-hole (e-h) coupled layer system composed of single layer graphene and two-dimensional (2D) GaAs layer separated by a barrier. The system is studied within the model of random phase approximation (RPA) and taking into account the static local field correction (LFC) and layer thickness effects in the Ballistic/Boltzmann regime. We have shown analytical expressions of non-linear susceptibility function and effective interlayer Coulomb interaction for non homogeneous dielectric environment at low temperature, high density and large interlayer separation limit. Exchange and correlation effects enhanced the drag resistivity by considering the static local field correction. Width of the layer and interlayer distance dependent local form factors (LFF) are obtained from the solution of the Poisson equation for a multi-layer dielectric medium. The effects of LFC and LFF are the function of bare inter- and intra-layer potential, which enhances the drag resistivity compare to simply measured RPA results. Enhanced drag resistivity also measured for e-h bilayer system where the hole layer is considered for 2D GaAs (drag layer), cause of larger effective mass of hole compare to the electron. Similarly, e-e and e-h bilayer system measured the enhanced drag resistivity due to LFC effects. Dielectric environment Elsevier Boltzmann regime Elsevier Static interaction Elsevier Local field correction Elsevier Coulomb drag Elsevier Saini, L.K. oth Enthalten in North-Holland, Elsevier Science Desai, Akshatha G. ELSEVIER Characterization of a 7 bp indel in MARCH1 promoter associated with reproductive traits in Malabari and Attappady Black goats of India 2021 Amsterdam [u.a.] (DE-627)ELV006775543 volume:127 year:2021 pages:0 https://doi.org/10.1016/j.physe.2020.114484 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U AR 127 2021 0 |
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10.1016/j.physe.2020.114484 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001288.pica (DE-627)ELV052594432 (ELSEVIER)S1386-9477(20)31552-6 DE-627 ger DE-627 rakwb eng 630 640 VZ Upadhyay, Sharad Kumar verfasserin aut Coulomb drag study in graphene/GaAs bilayer system with the effect of local field correction and dielectric medium 2021transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The drag resistivity is measured numerically for electron-electron (e-e) and electron-hole (e-h) coupled layer system composed of single layer graphene and two-dimensional (2D) GaAs layer separated by a barrier. The system is studied within the model of random phase approximation (RPA) and taking into account the static local field correction (LFC) and layer thickness effects in the Ballistic/Boltzmann regime. We have shown analytical expressions of non-linear susceptibility function and effective interlayer Coulomb interaction for non homogeneous dielectric environment at low temperature, high density and large interlayer separation limit. Exchange and correlation effects enhanced the drag resistivity by considering the static local field correction. Width of the layer and interlayer distance dependent local form factors (LFF) are obtained from the solution of the Poisson equation for a multi-layer dielectric medium. The effects of LFC and LFF are the function of bare inter- and intra-layer potential, which enhances the drag resistivity compare to simply measured RPA results. Enhanced drag resistivity also measured for e-h bilayer system where the hole layer is considered for 2D GaAs (drag layer), cause of larger effective mass of hole compare to the electron. Similarly, e-e and e-h bilayer system measured the enhanced drag resistivity due to LFC effects. The drag resistivity is measured numerically for electron-electron (e-e) and electron-hole (e-h) coupled layer system composed of single layer graphene and two-dimensional (2D) GaAs layer separated by a barrier. The system is studied within the model of random phase approximation (RPA) and taking into account the static local field correction (LFC) and layer thickness effects in the Ballistic/Boltzmann regime. We have shown analytical expressions of non-linear susceptibility function and effective interlayer Coulomb interaction for non homogeneous dielectric environment at low temperature, high density and large interlayer separation limit. Exchange and correlation effects enhanced the drag resistivity by considering the static local field correction. Width of the layer and interlayer distance dependent local form factors (LFF) are obtained from the solution of the Poisson equation for a multi-layer dielectric medium. The effects of LFC and LFF are the function of bare inter- and intra-layer potential, which enhances the drag resistivity compare to simply measured RPA results. Enhanced drag resistivity also measured for e-h bilayer system where the hole layer is considered for 2D GaAs (drag layer), cause of larger effective mass of hole compare to the electron. Similarly, e-e and e-h bilayer system measured the enhanced drag resistivity due to LFC effects. Dielectric environment Elsevier Boltzmann regime Elsevier Static interaction Elsevier Local field correction Elsevier Coulomb drag Elsevier Saini, L.K. oth Enthalten in North-Holland, Elsevier Science Desai, Akshatha G. ELSEVIER Characterization of a 7 bp indel in MARCH1 promoter associated with reproductive traits in Malabari and Attappady Black goats of India 2021 Amsterdam [u.a.] (DE-627)ELV006775543 volume:127 year:2021 pages:0 https://doi.org/10.1016/j.physe.2020.114484 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U AR 127 2021 0 |
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10.1016/j.physe.2020.114484 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001288.pica (DE-627)ELV052594432 (ELSEVIER)S1386-9477(20)31552-6 DE-627 ger DE-627 rakwb eng 630 640 VZ Upadhyay, Sharad Kumar verfasserin aut Coulomb drag study in graphene/GaAs bilayer system with the effect of local field correction and dielectric medium 2021transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The drag resistivity is measured numerically for electron-electron (e-e) and electron-hole (e-h) coupled layer system composed of single layer graphene and two-dimensional (2D) GaAs layer separated by a barrier. The system is studied within the model of random phase approximation (RPA) and taking into account the static local field correction (LFC) and layer thickness effects in the Ballistic/Boltzmann regime. We have shown analytical expressions of non-linear susceptibility function and effective interlayer Coulomb interaction for non homogeneous dielectric environment at low temperature, high density and large interlayer separation limit. Exchange and correlation effects enhanced the drag resistivity by considering the static local field correction. Width of the layer and interlayer distance dependent local form factors (LFF) are obtained from the solution of the Poisson equation for a multi-layer dielectric medium. The effects of LFC and LFF are the function of bare inter- and intra-layer potential, which enhances the drag resistivity compare to simply measured RPA results. Enhanced drag resistivity also measured for e-h bilayer system where the hole layer is considered for 2D GaAs (drag layer), cause of larger effective mass of hole compare to the electron. Similarly, e-e and e-h bilayer system measured the enhanced drag resistivity due to LFC effects. The drag resistivity is measured numerically for electron-electron (e-e) and electron-hole (e-h) coupled layer system composed of single layer graphene and two-dimensional (2D) GaAs layer separated by a barrier. The system is studied within the model of random phase approximation (RPA) and taking into account the static local field correction (LFC) and layer thickness effects in the Ballistic/Boltzmann regime. We have shown analytical expressions of non-linear susceptibility function and effective interlayer Coulomb interaction for non homogeneous dielectric environment at low temperature, high density and large interlayer separation limit. Exchange and correlation effects enhanced the drag resistivity by considering the static local field correction. Width of the layer and interlayer distance dependent local form factors (LFF) are obtained from the solution of the Poisson equation for a multi-layer dielectric medium. The effects of LFC and LFF are the function of bare inter- and intra-layer potential, which enhances the drag resistivity compare to simply measured RPA results. Enhanced drag resistivity also measured for e-h bilayer system where the hole layer is considered for 2D GaAs (drag layer), cause of larger effective mass of hole compare to the electron. Similarly, e-e and e-h bilayer system measured the enhanced drag resistivity due to LFC effects. Dielectric environment Elsevier Boltzmann regime Elsevier Static interaction Elsevier Local field correction Elsevier Coulomb drag Elsevier Saini, L.K. oth Enthalten in North-Holland, Elsevier Science Desai, Akshatha G. ELSEVIER Characterization of a 7 bp indel in MARCH1 promoter associated with reproductive traits in Malabari and Attappady Black goats of India 2021 Amsterdam [u.a.] (DE-627)ELV006775543 volume:127 year:2021 pages:0 https://doi.org/10.1016/j.physe.2020.114484 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U AR 127 2021 0 |
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Enthalten in Characterization of a 7 bp indel in MARCH1 promoter associated with reproductive traits in Malabari and Attappady Black goats of India Amsterdam [u.a.] volume:127 year:2021 pages:0 |
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The system is studied within the model of random phase approximation (RPA) and taking into account the static local field correction (LFC) and layer thickness effects in the Ballistic/Boltzmann regime. We have shown analytical expressions of non-linear susceptibility function and effective interlayer Coulomb interaction for non homogeneous dielectric environment at low temperature, high density and large interlayer separation limit. Exchange and correlation effects enhanced the drag resistivity by considering the static local field correction. Width of the layer and interlayer distance dependent local form factors (LFF) are obtained from the solution of the Poisson equation for a multi-layer dielectric medium. The effects of LFC and LFF are the function of bare inter- and intra-layer potential, which enhances the drag resistivity compare to simply measured RPA results. Enhanced drag resistivity also measured for e-h bilayer system where the hole layer is considered for 2D GaAs (drag layer), cause of larger effective mass of hole compare to the electron. Similarly, e-e and e-h bilayer system measured the enhanced drag resistivity due to LFC effects.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">The drag resistivity is measured numerically for electron-electron (e-e) and electron-hole (e-h) coupled layer system composed of single layer graphene and two-dimensional (2D) GaAs layer separated by a barrier. The system is studied within the model of random phase approximation (RPA) and taking into account the static local field correction (LFC) and layer thickness effects in the Ballistic/Boltzmann regime. 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Coulomb drag study in graphene/GaAs bilayer system with the effect of local field correction and dielectric medium |
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The drag resistivity is measured numerically for electron-electron (e-e) and electron-hole (e-h) coupled layer system composed of single layer graphene and two-dimensional (2D) GaAs layer separated by a barrier. The system is studied within the model of random phase approximation (RPA) and taking into account the static local field correction (LFC) and layer thickness effects in the Ballistic/Boltzmann regime. We have shown analytical expressions of non-linear susceptibility function and effective interlayer Coulomb interaction for non homogeneous dielectric environment at low temperature, high density and large interlayer separation limit. Exchange and correlation effects enhanced the drag resistivity by considering the static local field correction. Width of the layer and interlayer distance dependent local form factors (LFF) are obtained from the solution of the Poisson equation for a multi-layer dielectric medium. The effects of LFC and LFF are the function of bare inter- and intra-layer potential, which enhances the drag resistivity compare to simply measured RPA results. Enhanced drag resistivity also measured for e-h bilayer system where the hole layer is considered for 2D GaAs (drag layer), cause of larger effective mass of hole compare to the electron. Similarly, e-e and e-h bilayer system measured the enhanced drag resistivity due to LFC effects. |
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The drag resistivity is measured numerically for electron-electron (e-e) and electron-hole (e-h) coupled layer system composed of single layer graphene and two-dimensional (2D) GaAs layer separated by a barrier. The system is studied within the model of random phase approximation (RPA) and taking into account the static local field correction (LFC) and layer thickness effects in the Ballistic/Boltzmann regime. We have shown analytical expressions of non-linear susceptibility function and effective interlayer Coulomb interaction for non homogeneous dielectric environment at low temperature, high density and large interlayer separation limit. Exchange and correlation effects enhanced the drag resistivity by considering the static local field correction. Width of the layer and interlayer distance dependent local form factors (LFF) are obtained from the solution of the Poisson equation for a multi-layer dielectric medium. The effects of LFC and LFF are the function of bare inter- and intra-layer potential, which enhances the drag resistivity compare to simply measured RPA results. Enhanced drag resistivity also measured for e-h bilayer system where the hole layer is considered for 2D GaAs (drag layer), cause of larger effective mass of hole compare to the electron. Similarly, e-e and e-h bilayer system measured the enhanced drag resistivity due to LFC effects. |
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The drag resistivity is measured numerically for electron-electron (e-e) and electron-hole (e-h) coupled layer system composed of single layer graphene and two-dimensional (2D) GaAs layer separated by a barrier. The system is studied within the model of random phase approximation (RPA) and taking into account the static local field correction (LFC) and layer thickness effects in the Ballistic/Boltzmann regime. We have shown analytical expressions of non-linear susceptibility function and effective interlayer Coulomb interaction for non homogeneous dielectric environment at low temperature, high density and large interlayer separation limit. Exchange and correlation effects enhanced the drag resistivity by considering the static local field correction. Width of the layer and interlayer distance dependent local form factors (LFF) are obtained from the solution of the Poisson equation for a multi-layer dielectric medium. The effects of LFC and LFF are the function of bare inter- and intra-layer potential, which enhances the drag resistivity compare to simply measured RPA results. Enhanced drag resistivity also measured for e-h bilayer system where the hole layer is considered for 2D GaAs (drag layer), cause of larger effective mass of hole compare to the electron. Similarly, e-e and e-h bilayer system measured the enhanced drag resistivity due to LFC effects. |
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Coulomb drag study in graphene/GaAs bilayer system with the effect of local field correction and dielectric medium |
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