Observation of single event burnout (SEB) in an SOI NLDMOSFET using a pulsed laser
Single event burnout (SEB) of NLDMOSFETs on SOI initiated by pulsed laser irradiation is demonstrated for the first time. The sensitive region of the device for SEB and the effects of reverse voltage and laser energy are explored. The data indicate that the device is most sensitive to laser pulses i...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Shu, Lei [verfasserIn] |
|---|
| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2021transfer abstract |
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| Übergeordnetes Werk: |
Enthalten in: Fixed-time neural control for output-constrained synchronization of second-order chaotic systems - Yao, Qijia ELSEVIER, 2023, Amsterdam [u.a.] |
|---|---|
| Übergeordnetes Werk: |
volume:116 ; year:2021 ; pages:0 |
| Links: |
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| DOI / URN: |
10.1016/j.microrel.2020.113997 |
|---|
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| 520 | |a Single event burnout (SEB) of NLDMOSFETs on SOI initiated by pulsed laser irradiation is demonstrated for the first time. The sensitive region of the device for SEB and the effects of reverse voltage and laser energy are explored. The data indicate that the device is most sensitive to laser pulses in the drift region near the P-well. This is influenced by the electric field distribution in the drift region of the LDMOSFET at the time of the laser pulse. The SEB threshold depends on both the applied reverse voltage and the laser pulse energy. The laser pulse energy at a given reverse voltage required to initiate SEB is inversely proportional to the laser spot distance from the P-well. Simulation results for the device drain current following the radiation pulse indicate that the behavior of the npn parasitic bipolar transistor inherent in the LDMOS structure can explain the observations. | ||
| 520 | |a Single event burnout (SEB) of NLDMOSFETs on SOI initiated by pulsed laser irradiation is demonstrated for the first time. The sensitive region of the device for SEB and the effects of reverse voltage and laser energy are explored. The data indicate that the device is most sensitive to laser pulses in the drift region near the P-well. This is influenced by the electric field distribution in the drift region of the LDMOSFET at the time of the laser pulse. The SEB threshold depends on both the applied reverse voltage and the laser pulse energy. The laser pulse energy at a given reverse voltage required to initiate SEB is inversely proportional to the laser spot distance from the P-well. Simulation results for the device drain current following the radiation pulse indicate that the behavior of the npn parasitic bipolar transistor inherent in the LDMOS structure can explain the observations. | ||
| 700 | 1 | |a Qi, Chun-Hua |4 oth | |
| 700 | 1 | |a Galloway, Kenneth F. |4 oth | |
| 700 | 1 | |a Zhao, Yuan-Fu |4 oth | |
| 700 | 1 | |a Cao, Wei-Yi |4 oth | |
| 700 | 1 | |a Li, Xin-Jian |4 oth | |
| 700 | 1 | |a Wang, Liang |4 oth | |
| 700 | 1 | |a Zhang, En-Xia |4 oth | |
| 700 | 1 | |a Wang, Xin-Sheng |4 oth | |
| 700 | 1 | |a Shi, Rui-Xin |4 oth | |
| 700 | 1 | |a Zhou, Xin |4 oth | |
| 700 | 1 | |a Chen, Wei-Ping |4 oth | |
| 700 | 1 | |a Qiao, Ming |4 oth | |
| 700 | 1 | |a Zhou, Bin |4 oth | |
| 700 | 1 | |a Liu, Chao-Ming |4 oth | |
| 700 | 1 | |a Ma, Liang |4 oth | |
| 700 | 1 | |a Zhang, Yan Qing |4 oth | |
| 700 | 1 | |a Wang, Tian-Qi |4 oth | |
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10.1016/j.microrel.2020.113997 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001251.pica (DE-627)ELV052612155 (ELSEVIER)S0026-2714(20)30883-0 DE-627 ger DE-627 rakwb eng 510 VZ 30.20 bkl 31.00 bkl Shu, Lei verfasserin aut Observation of single event burnout (SEB) in an SOI NLDMOSFET using a pulsed laser 2021transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Single event burnout (SEB) of NLDMOSFETs on SOI initiated by pulsed laser irradiation is demonstrated for the first time. The sensitive region of the device for SEB and the effects of reverse voltage and laser energy are explored. The data indicate that the device is most sensitive to laser pulses in the drift region near the P-well. This is influenced by the electric field distribution in the drift region of the LDMOSFET at the time of the laser pulse. The SEB threshold depends on both the applied reverse voltage and the laser pulse energy. The laser pulse energy at a given reverse voltage required to initiate SEB is inversely proportional to the laser spot distance from the P-well. Simulation results for the device drain current following the radiation pulse indicate that the behavior of the npn parasitic bipolar transistor inherent in the LDMOS structure can explain the observations. Single event burnout (SEB) of NLDMOSFETs on SOI initiated by pulsed laser irradiation is demonstrated for the first time. The sensitive region of the device for SEB and the effects of reverse voltage and laser energy are explored. The data indicate that the device is most sensitive to laser pulses in the drift region near the P-well. This is influenced by the electric field distribution in the drift region of the LDMOSFET at the time of the laser pulse. The SEB threshold depends on both the applied reverse voltage and the laser pulse energy. The laser pulse energy at a given reverse voltage required to initiate SEB is inversely proportional to the laser spot distance from the P-well. Simulation results for the device drain current following the radiation pulse indicate that the behavior of the npn parasitic bipolar transistor inherent in the LDMOS structure can explain the observations. Qi, Chun-Hua oth Galloway, Kenneth F. oth Zhao, Yuan-Fu oth Cao, Wei-Yi oth Li, Xin-Jian oth Wang, Liang oth Zhang, En-Xia oth Wang, Xin-Sheng oth Shi, Rui-Xin oth Zhou, Xin oth Chen, Wei-Ping oth Qiao, Ming oth Zhou, Bin oth Liu, Chao-Ming oth Ma, Liang oth Zhang, Yan Qing oth Wang, Tian-Qi oth Enthalten in Elsevier Yao, Qijia ELSEVIER Fixed-time neural control for output-constrained synchronization of second-order chaotic systems 2023 Amsterdam [u.a.] (DE-627)ELV009442901 volume:116 year:2021 pages:0 https://doi.org/10.1016/j.microrel.2020.113997 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OPC-MAT 30.20 Nichtlineare Dynamik VZ 31.00 Mathematik: Allgemeines VZ AR 116 2021 0 |
| spelling |
10.1016/j.microrel.2020.113997 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001251.pica (DE-627)ELV052612155 (ELSEVIER)S0026-2714(20)30883-0 DE-627 ger DE-627 rakwb eng 510 VZ 30.20 bkl 31.00 bkl Shu, Lei verfasserin aut Observation of single event burnout (SEB) in an SOI NLDMOSFET using a pulsed laser 2021transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Single event burnout (SEB) of NLDMOSFETs on SOI initiated by pulsed laser irradiation is demonstrated for the first time. The sensitive region of the device for SEB and the effects of reverse voltage and laser energy are explored. The data indicate that the device is most sensitive to laser pulses in the drift region near the P-well. This is influenced by the electric field distribution in the drift region of the LDMOSFET at the time of the laser pulse. The SEB threshold depends on both the applied reverse voltage and the laser pulse energy. The laser pulse energy at a given reverse voltage required to initiate SEB is inversely proportional to the laser spot distance from the P-well. Simulation results for the device drain current following the radiation pulse indicate that the behavior of the npn parasitic bipolar transistor inherent in the LDMOS structure can explain the observations. Single event burnout (SEB) of NLDMOSFETs on SOI initiated by pulsed laser irradiation is demonstrated for the first time. The sensitive region of the device for SEB and the effects of reverse voltage and laser energy are explored. The data indicate that the device is most sensitive to laser pulses in the drift region near the P-well. This is influenced by the electric field distribution in the drift region of the LDMOSFET at the time of the laser pulse. The SEB threshold depends on both the applied reverse voltage and the laser pulse energy. The laser pulse energy at a given reverse voltage required to initiate SEB is inversely proportional to the laser spot distance from the P-well. Simulation results for the device drain current following the radiation pulse indicate that the behavior of the npn parasitic bipolar transistor inherent in the LDMOS structure can explain the observations. Qi, Chun-Hua oth Galloway, Kenneth F. oth Zhao, Yuan-Fu oth Cao, Wei-Yi oth Li, Xin-Jian oth Wang, Liang oth Zhang, En-Xia oth Wang, Xin-Sheng oth Shi, Rui-Xin oth Zhou, Xin oth Chen, Wei-Ping oth Qiao, Ming oth Zhou, Bin oth Liu, Chao-Ming oth Ma, Liang oth Zhang, Yan Qing oth Wang, Tian-Qi oth Enthalten in Elsevier Yao, Qijia ELSEVIER Fixed-time neural control for output-constrained synchronization of second-order chaotic systems 2023 Amsterdam [u.a.] (DE-627)ELV009442901 volume:116 year:2021 pages:0 https://doi.org/10.1016/j.microrel.2020.113997 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OPC-MAT 30.20 Nichtlineare Dynamik VZ 31.00 Mathematik: Allgemeines VZ AR 116 2021 0 |
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10.1016/j.microrel.2020.113997 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001251.pica (DE-627)ELV052612155 (ELSEVIER)S0026-2714(20)30883-0 DE-627 ger DE-627 rakwb eng 510 VZ 30.20 bkl 31.00 bkl Shu, Lei verfasserin aut Observation of single event burnout (SEB) in an SOI NLDMOSFET using a pulsed laser 2021transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Single event burnout (SEB) of NLDMOSFETs on SOI initiated by pulsed laser irradiation is demonstrated for the first time. The sensitive region of the device for SEB and the effects of reverse voltage and laser energy are explored. The data indicate that the device is most sensitive to laser pulses in the drift region near the P-well. This is influenced by the electric field distribution in the drift region of the LDMOSFET at the time of the laser pulse. The SEB threshold depends on both the applied reverse voltage and the laser pulse energy. The laser pulse energy at a given reverse voltage required to initiate SEB is inversely proportional to the laser spot distance from the P-well. Simulation results for the device drain current following the radiation pulse indicate that the behavior of the npn parasitic bipolar transistor inherent in the LDMOS structure can explain the observations. Single event burnout (SEB) of NLDMOSFETs on SOI initiated by pulsed laser irradiation is demonstrated for the first time. The sensitive region of the device for SEB and the effects of reverse voltage and laser energy are explored. The data indicate that the device is most sensitive to laser pulses in the drift region near the P-well. This is influenced by the electric field distribution in the drift region of the LDMOSFET at the time of the laser pulse. The SEB threshold depends on both the applied reverse voltage and the laser pulse energy. The laser pulse energy at a given reverse voltage required to initiate SEB is inversely proportional to the laser spot distance from the P-well. Simulation results for the device drain current following the radiation pulse indicate that the behavior of the npn parasitic bipolar transistor inherent in the LDMOS structure can explain the observations. Qi, Chun-Hua oth Galloway, Kenneth F. oth Zhao, Yuan-Fu oth Cao, Wei-Yi oth Li, Xin-Jian oth Wang, Liang oth Zhang, En-Xia oth Wang, Xin-Sheng oth Shi, Rui-Xin oth Zhou, Xin oth Chen, Wei-Ping oth Qiao, Ming oth Zhou, Bin oth Liu, Chao-Ming oth Ma, Liang oth Zhang, Yan Qing oth Wang, Tian-Qi oth Enthalten in Elsevier Yao, Qijia ELSEVIER Fixed-time neural control for output-constrained synchronization of second-order chaotic systems 2023 Amsterdam [u.a.] (DE-627)ELV009442901 volume:116 year:2021 pages:0 https://doi.org/10.1016/j.microrel.2020.113997 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OPC-MAT 30.20 Nichtlineare Dynamik VZ 31.00 Mathematik: Allgemeines VZ AR 116 2021 0 |
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10.1016/j.microrel.2020.113997 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001251.pica (DE-627)ELV052612155 (ELSEVIER)S0026-2714(20)30883-0 DE-627 ger DE-627 rakwb eng 510 VZ 30.20 bkl 31.00 bkl Shu, Lei verfasserin aut Observation of single event burnout (SEB) in an SOI NLDMOSFET using a pulsed laser 2021transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Single event burnout (SEB) of NLDMOSFETs on SOI initiated by pulsed laser irradiation is demonstrated for the first time. The sensitive region of the device for SEB and the effects of reverse voltage and laser energy are explored. The data indicate that the device is most sensitive to laser pulses in the drift region near the P-well. This is influenced by the electric field distribution in the drift region of the LDMOSFET at the time of the laser pulse. The SEB threshold depends on both the applied reverse voltage and the laser pulse energy. The laser pulse energy at a given reverse voltage required to initiate SEB is inversely proportional to the laser spot distance from the P-well. Simulation results for the device drain current following the radiation pulse indicate that the behavior of the npn parasitic bipolar transistor inherent in the LDMOS structure can explain the observations. Single event burnout (SEB) of NLDMOSFETs on SOI initiated by pulsed laser irradiation is demonstrated for the first time. The sensitive region of the device for SEB and the effects of reverse voltage and laser energy are explored. The data indicate that the device is most sensitive to laser pulses in the drift region near the P-well. This is influenced by the electric field distribution in the drift region of the LDMOSFET at the time of the laser pulse. The SEB threshold depends on both the applied reverse voltage and the laser pulse energy. The laser pulse energy at a given reverse voltage required to initiate SEB is inversely proportional to the laser spot distance from the P-well. Simulation results for the device drain current following the radiation pulse indicate that the behavior of the npn parasitic bipolar transistor inherent in the LDMOS structure can explain the observations. Qi, Chun-Hua oth Galloway, Kenneth F. oth Zhao, Yuan-Fu oth Cao, Wei-Yi oth Li, Xin-Jian oth Wang, Liang oth Zhang, En-Xia oth Wang, Xin-Sheng oth Shi, Rui-Xin oth Zhou, Xin oth Chen, Wei-Ping oth Qiao, Ming oth Zhou, Bin oth Liu, Chao-Ming oth Ma, Liang oth Zhang, Yan Qing oth Wang, Tian-Qi oth Enthalten in Elsevier Yao, Qijia ELSEVIER Fixed-time neural control for output-constrained synchronization of second-order chaotic systems 2023 Amsterdam [u.a.] (DE-627)ELV009442901 volume:116 year:2021 pages:0 https://doi.org/10.1016/j.microrel.2020.113997 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OPC-MAT 30.20 Nichtlineare Dynamik VZ 31.00 Mathematik: Allgemeines VZ AR 116 2021 0 |
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10.1016/j.microrel.2020.113997 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001251.pica (DE-627)ELV052612155 (ELSEVIER)S0026-2714(20)30883-0 DE-627 ger DE-627 rakwb eng 510 VZ 30.20 bkl 31.00 bkl Shu, Lei verfasserin aut Observation of single event burnout (SEB) in an SOI NLDMOSFET using a pulsed laser 2021transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Single event burnout (SEB) of NLDMOSFETs on SOI initiated by pulsed laser irradiation is demonstrated for the first time. The sensitive region of the device for SEB and the effects of reverse voltage and laser energy are explored. The data indicate that the device is most sensitive to laser pulses in the drift region near the P-well. This is influenced by the electric field distribution in the drift region of the LDMOSFET at the time of the laser pulse. The SEB threshold depends on both the applied reverse voltage and the laser pulse energy. The laser pulse energy at a given reverse voltage required to initiate SEB is inversely proportional to the laser spot distance from the P-well. Simulation results for the device drain current following the radiation pulse indicate that the behavior of the npn parasitic bipolar transistor inherent in the LDMOS structure can explain the observations. Single event burnout (SEB) of NLDMOSFETs on SOI initiated by pulsed laser irradiation is demonstrated for the first time. The sensitive region of the device for SEB and the effects of reverse voltage and laser energy are explored. The data indicate that the device is most sensitive to laser pulses in the drift region near the P-well. This is influenced by the electric field distribution in the drift region of the LDMOSFET at the time of the laser pulse. The SEB threshold depends on both the applied reverse voltage and the laser pulse energy. The laser pulse energy at a given reverse voltage required to initiate SEB is inversely proportional to the laser spot distance from the P-well. Simulation results for the device drain current following the radiation pulse indicate that the behavior of the npn parasitic bipolar transistor inherent in the LDMOS structure can explain the observations. Qi, Chun-Hua oth Galloway, Kenneth F. oth Zhao, Yuan-Fu oth Cao, Wei-Yi oth Li, Xin-Jian oth Wang, Liang oth Zhang, En-Xia oth Wang, Xin-Sheng oth Shi, Rui-Xin oth Zhou, Xin oth Chen, Wei-Ping oth Qiao, Ming oth Zhou, Bin oth Liu, Chao-Ming oth Ma, Liang oth Zhang, Yan Qing oth Wang, Tian-Qi oth Enthalten in Elsevier Yao, Qijia ELSEVIER Fixed-time neural control for output-constrained synchronization of second-order chaotic systems 2023 Amsterdam [u.a.] (DE-627)ELV009442901 volume:116 year:2021 pages:0 https://doi.org/10.1016/j.microrel.2020.113997 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OPC-MAT 30.20 Nichtlineare Dynamik VZ 31.00 Mathematik: Allgemeines VZ AR 116 2021 0 |
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Enthalten in Fixed-time neural control for output-constrained synchronization of second-order chaotic systems Amsterdam [u.a.] volume:116 year:2021 pages:0 |
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Enthalten in Fixed-time neural control for output-constrained synchronization of second-order chaotic systems Amsterdam [u.a.] volume:116 year:2021 pages:0 |
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Fixed-time neural control for output-constrained synchronization of second-order chaotic systems |
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Shu, Lei @@aut@@ Qi, Chun-Hua @@oth@@ Galloway, Kenneth F. @@oth@@ Zhao, Yuan-Fu @@oth@@ Cao, Wei-Yi @@oth@@ Li, Xin-Jian @@oth@@ Wang, Liang @@oth@@ Zhang, En-Xia @@oth@@ Wang, Xin-Sheng @@oth@@ Shi, Rui-Xin @@oth@@ Zhou, Xin @@oth@@ Chen, Wei-Ping @@oth@@ Qiao, Ming @@oth@@ Zhou, Bin @@oth@@ Liu, Chao-Ming @@oth@@ Ma, Liang @@oth@@ Zhang, Yan Qing @@oth@@ Wang, Tian-Qi @@oth@@ |
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Observation of single event burnout (SEB) in an SOI NLDMOSFET using a pulsed laser |
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observation of single event burnout (seb) in an soi nldmosfet using a pulsed laser |
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Observation of single event burnout (SEB) in an SOI NLDMOSFET using a pulsed laser |
| abstract |
Single event burnout (SEB) of NLDMOSFETs on SOI initiated by pulsed laser irradiation is demonstrated for the first time. The sensitive region of the device for SEB and the effects of reverse voltage and laser energy are explored. The data indicate that the device is most sensitive to laser pulses in the drift region near the P-well. This is influenced by the electric field distribution in the drift region of the LDMOSFET at the time of the laser pulse. The SEB threshold depends on both the applied reverse voltage and the laser pulse energy. The laser pulse energy at a given reverse voltage required to initiate SEB is inversely proportional to the laser spot distance from the P-well. Simulation results for the device drain current following the radiation pulse indicate that the behavior of the npn parasitic bipolar transistor inherent in the LDMOS structure can explain the observations. |
| abstractGer |
Single event burnout (SEB) of NLDMOSFETs on SOI initiated by pulsed laser irradiation is demonstrated for the first time. The sensitive region of the device for SEB and the effects of reverse voltage and laser energy are explored. The data indicate that the device is most sensitive to laser pulses in the drift region near the P-well. This is influenced by the electric field distribution in the drift region of the LDMOSFET at the time of the laser pulse. The SEB threshold depends on both the applied reverse voltage and the laser pulse energy. The laser pulse energy at a given reverse voltage required to initiate SEB is inversely proportional to the laser spot distance from the P-well. Simulation results for the device drain current following the radiation pulse indicate that the behavior of the npn parasitic bipolar transistor inherent in the LDMOS structure can explain the observations. |
| abstract_unstemmed |
Single event burnout (SEB) of NLDMOSFETs on SOI initiated by pulsed laser irradiation is demonstrated for the first time. The sensitive region of the device for SEB and the effects of reverse voltage and laser energy are explored. The data indicate that the device is most sensitive to laser pulses in the drift region near the P-well. This is influenced by the electric field distribution in the drift region of the LDMOSFET at the time of the laser pulse. The SEB threshold depends on both the applied reverse voltage and the laser pulse energy. The laser pulse energy at a given reverse voltage required to initiate SEB is inversely proportional to the laser spot distance from the P-well. Simulation results for the device drain current following the radiation pulse indicate that the behavior of the npn parasitic bipolar transistor inherent in the LDMOS structure can explain the observations. |
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Observation of single event burnout (SEB) in an SOI NLDMOSFET using a pulsed laser |
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