Microstructure characteristics of C+ and He+ irradiated SiCf/SiC composites before and after annealing
The microstructures of SiCf/SiC composites irradiated with 400 keV C+ and then 200 keV He+ at 633 K and annealed post-irradiation at 1073, 1273, and 1473 K for 5 h were analyzed. The SiCf/SiC composites were composed of nanocrystal SiC fibers with 5–25 μm in size, SiC matrix with a columnar crystal...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Liu, Guiliang [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2021transfer abstract |
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| Umfang: |
8 |
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| Übergeordnetes Werk: |
Enthalten in: Soil and water bioengineering: Practice and research needs for reconciling natural hazard control and ecological restoration - Rey, F. ELSEVIER, 2018, Amsterdam [u.a.] |
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| Übergeordnetes Werk: |
volume:47 ; year:2021 ; number:6 ; day:15 ; month:03 ; pages:8408-8415 ; extent:8 |
| Links: |
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| DOI / URN: |
10.1016/j.ceramint.2020.11.205 |
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ELV053185161 |
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| 245 | 1 | 0 | |a Microstructure characteristics of C+ and He+ irradiated SiCf/SiC composites before and after annealing |
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| 520 | |a The microstructures of SiCf/SiC composites irradiated with 400 keV C+ and then 200 keV He+ at 633 K and annealed post-irradiation at 1073, 1273, and 1473 K for 5 h were analyzed. The SiCf/SiC composites were composed of nanocrystal SiC fibers with 5–25 μm in size, SiC matrix with a columnar crystal structure, and six transition layers (alternate distribution of pyrolytic carbon and SiC layers) between them. Several fine microcracks induced by irradiation appeared at the interfaces and grew during annealing. An irradiation band with a few helium bubbles was formed in the SiC fiber and had a width of approximately 260 nm, which decreased with increase in annealing temperature. Annealing caused the irradiation-induced bubbles to grow and induced a linear arrangement of the bubbles in the SiC fiber. Larger He bubbles were generated at the grain boundary and tended to form microcracks in the SiC matrix. Irradiation did not cause obvious amorphization at 633 K and annealing did not induce nanograin growth. After irradiation, the area fraction and size of carbon packets with graphitic nature in the SiC fiber decreased. | ||
| 520 | |a The microstructures of SiCf/SiC composites irradiated with 400 keV C+ and then 200 keV He+ at 633 K and annealed post-irradiation at 1073, 1273, and 1473 K for 5 h were analyzed. The SiCf/SiC composites were composed of nanocrystal SiC fibers with 5–25 μm in size, SiC matrix with a columnar crystal structure, and six transition layers (alternate distribution of pyrolytic carbon and SiC layers) between them. Several fine microcracks induced by irradiation appeared at the interfaces and grew during annealing. An irradiation band with a few helium bubbles was formed in the SiC fiber and had a width of approximately 260 nm, which decreased with increase in annealing temperature. Annealing caused the irradiation-induced bubbles to grow and induced a linear arrangement of the bubbles in the SiC fiber. Larger He bubbles were generated at the grain boundary and tended to form microcracks in the SiC matrix. Irradiation did not cause obvious amorphization at 633 K and annealing did not induce nanograin growth. After irradiation, the area fraction and size of carbon packets with graphitic nature in the SiC fiber decreased. | ||
| 650 | 7 | |a SiCf/SiC composites |2 Elsevier | |
| 650 | 7 | |a Bubbles |2 Elsevier | |
| 650 | 7 | |a Annealing |2 Elsevier | |
| 650 | 7 | |a Ion irradiation |2 Elsevier | |
| 650 | 7 | |a Microstructure |2 Elsevier | |
| 700 | 1 | |a Ran, Guang |4 oth | |
| 700 | 1 | |a He, Zongbei |4 oth | |
| 700 | 1 | |a Ye, Chao |4 oth | |
| 700 | 1 | |a Li, Yipeng |4 oth | |
| 700 | 1 | |a Liu, Xinyi |4 oth | |
| 700 | 1 | |a Chen, Yang |4 oth | |
| 700 | 1 | |a Chen, Zhaoke |4 oth | |
| 700 | 1 | |a Cong, Shuo |4 oth | |
| 700 | 1 | |a Zhang, Ruiqian |4 oth | |
| 700 | 1 | |a Huang, Xiuyin |4 oth | |
| 773 | 0 | 8 | |i Enthalten in |n Elsevier Science |a Rey, F. ELSEVIER |t Soil and water bioengineering: Practice and research needs for reconciling natural hazard control and ecological restoration |d 2018 |g Amsterdam [u.a.] |w (DE-627)ELV000899798 |
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10.1016/j.ceramint.2020.11.205 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001677.pica (DE-627)ELV053185161 (ELSEVIER)S0272-8842(20)33540-9 DE-627 ger DE-627 rakwb eng 333.7 610 VZ 43.12 bkl 43.13 bkl 44.13 bkl Liu, Guiliang verfasserin aut Microstructure characteristics of C+ and He+ irradiated SiCf/SiC composites before and after annealing 2021transfer abstract 8 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The microstructures of SiCf/SiC composites irradiated with 400 keV C+ and then 200 keV He+ at 633 K and annealed post-irradiation at 1073, 1273, and 1473 K for 5 h were analyzed. The SiCf/SiC composites were composed of nanocrystal SiC fibers with 5–25 μm in size, SiC matrix with a columnar crystal structure, and six transition layers (alternate distribution of pyrolytic carbon and SiC layers) between them. Several fine microcracks induced by irradiation appeared at the interfaces and grew during annealing. An irradiation band with a few helium bubbles was formed in the SiC fiber and had a width of approximately 260 nm, which decreased with increase in annealing temperature. Annealing caused the irradiation-induced bubbles to grow and induced a linear arrangement of the bubbles in the SiC fiber. Larger He bubbles were generated at the grain boundary and tended to form microcracks in the SiC matrix. Irradiation did not cause obvious amorphization at 633 K and annealing did not induce nanograin growth. After irradiation, the area fraction and size of carbon packets with graphitic nature in the SiC fiber decreased. The microstructures of SiCf/SiC composites irradiated with 400 keV C+ and then 200 keV He+ at 633 K and annealed post-irradiation at 1073, 1273, and 1473 K for 5 h were analyzed. The SiCf/SiC composites were composed of nanocrystal SiC fibers with 5–25 μm in size, SiC matrix with a columnar crystal structure, and six transition layers (alternate distribution of pyrolytic carbon and SiC layers) between them. Several fine microcracks induced by irradiation appeared at the interfaces and grew during annealing. An irradiation band with a few helium bubbles was formed in the SiC fiber and had a width of approximately 260 nm, which decreased with increase in annealing temperature. Annealing caused the irradiation-induced bubbles to grow and induced a linear arrangement of the bubbles in the SiC fiber. Larger He bubbles were generated at the grain boundary and tended to form microcracks in the SiC matrix. Irradiation did not cause obvious amorphization at 633 K and annealing did not induce nanograin growth. After irradiation, the area fraction and size of carbon packets with graphitic nature in the SiC fiber decreased. SiCf/SiC composites Elsevier Bubbles Elsevier Annealing Elsevier Ion irradiation Elsevier Microstructure Elsevier Ran, Guang oth He, Zongbei oth Ye, Chao oth Li, Yipeng oth Liu, Xinyi oth Chen, Yang oth Chen, Zhaoke oth Cong, Shuo oth Zhang, Ruiqian oth Huang, Xiuyin oth Enthalten in Elsevier Science Rey, F. ELSEVIER Soil and water bioengineering: Practice and research needs for reconciling natural hazard control and ecological restoration 2018 Amsterdam [u.a.] (DE-627)ELV000899798 volume:47 year:2021 number:6 day:15 month:03 pages:8408-8415 extent:8 https://doi.org/10.1016/j.ceramint.2020.11.205 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA SSG-OPC-GGO 43.12 Umweltchemie VZ 43.13 Umwelttoxikologie VZ 44.13 Medizinische Ökologie VZ AR 47 2021 6 15 0315 8408-8415 8 |
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10.1016/j.ceramint.2020.11.205 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001677.pica (DE-627)ELV053185161 (ELSEVIER)S0272-8842(20)33540-9 DE-627 ger DE-627 rakwb eng 333.7 610 VZ 43.12 bkl 43.13 bkl 44.13 bkl Liu, Guiliang verfasserin aut Microstructure characteristics of C+ and He+ irradiated SiCf/SiC composites before and after annealing 2021transfer abstract 8 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The microstructures of SiCf/SiC composites irradiated with 400 keV C+ and then 200 keV He+ at 633 K and annealed post-irradiation at 1073, 1273, and 1473 K for 5 h were analyzed. The SiCf/SiC composites were composed of nanocrystal SiC fibers with 5–25 μm in size, SiC matrix with a columnar crystal structure, and six transition layers (alternate distribution of pyrolytic carbon and SiC layers) between them. Several fine microcracks induced by irradiation appeared at the interfaces and grew during annealing. An irradiation band with a few helium bubbles was formed in the SiC fiber and had a width of approximately 260 nm, which decreased with increase in annealing temperature. Annealing caused the irradiation-induced bubbles to grow and induced a linear arrangement of the bubbles in the SiC fiber. Larger He bubbles were generated at the grain boundary and tended to form microcracks in the SiC matrix. Irradiation did not cause obvious amorphization at 633 K and annealing did not induce nanograin growth. After irradiation, the area fraction and size of carbon packets with graphitic nature in the SiC fiber decreased. The microstructures of SiCf/SiC composites irradiated with 400 keV C+ and then 200 keV He+ at 633 K and annealed post-irradiation at 1073, 1273, and 1473 K for 5 h were analyzed. The SiCf/SiC composites were composed of nanocrystal SiC fibers with 5–25 μm in size, SiC matrix with a columnar crystal structure, and six transition layers (alternate distribution of pyrolytic carbon and SiC layers) between them. Several fine microcracks induced by irradiation appeared at the interfaces and grew during annealing. An irradiation band with a few helium bubbles was formed in the SiC fiber and had a width of approximately 260 nm, which decreased with increase in annealing temperature. Annealing caused the irradiation-induced bubbles to grow and induced a linear arrangement of the bubbles in the SiC fiber. Larger He bubbles were generated at the grain boundary and tended to form microcracks in the SiC matrix. Irradiation did not cause obvious amorphization at 633 K and annealing did not induce nanograin growth. After irradiation, the area fraction and size of carbon packets with graphitic nature in the SiC fiber decreased. SiCf/SiC composites Elsevier Bubbles Elsevier Annealing Elsevier Ion irradiation Elsevier Microstructure Elsevier Ran, Guang oth He, Zongbei oth Ye, Chao oth Li, Yipeng oth Liu, Xinyi oth Chen, Yang oth Chen, Zhaoke oth Cong, Shuo oth Zhang, Ruiqian oth Huang, Xiuyin oth Enthalten in Elsevier Science Rey, F. ELSEVIER Soil and water bioengineering: Practice and research needs for reconciling natural hazard control and ecological restoration 2018 Amsterdam [u.a.] (DE-627)ELV000899798 volume:47 year:2021 number:6 day:15 month:03 pages:8408-8415 extent:8 https://doi.org/10.1016/j.ceramint.2020.11.205 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA SSG-OPC-GGO 43.12 Umweltchemie VZ 43.13 Umwelttoxikologie VZ 44.13 Medizinische Ökologie VZ AR 47 2021 6 15 0315 8408-8415 8 |
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10.1016/j.ceramint.2020.11.205 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001677.pica (DE-627)ELV053185161 (ELSEVIER)S0272-8842(20)33540-9 DE-627 ger DE-627 rakwb eng 333.7 610 VZ 43.12 bkl 43.13 bkl 44.13 bkl Liu, Guiliang verfasserin aut Microstructure characteristics of C+ and He+ irradiated SiCf/SiC composites before and after annealing 2021transfer abstract 8 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The microstructures of SiCf/SiC composites irradiated with 400 keV C+ and then 200 keV He+ at 633 K and annealed post-irradiation at 1073, 1273, and 1473 K for 5 h were analyzed. The SiCf/SiC composites were composed of nanocrystal SiC fibers with 5–25 μm in size, SiC matrix with a columnar crystal structure, and six transition layers (alternate distribution of pyrolytic carbon and SiC layers) between them. Several fine microcracks induced by irradiation appeared at the interfaces and grew during annealing. An irradiation band with a few helium bubbles was formed in the SiC fiber and had a width of approximately 260 nm, which decreased with increase in annealing temperature. Annealing caused the irradiation-induced bubbles to grow and induced a linear arrangement of the bubbles in the SiC fiber. Larger He bubbles were generated at the grain boundary and tended to form microcracks in the SiC matrix. Irradiation did not cause obvious amorphization at 633 K and annealing did not induce nanograin growth. After irradiation, the area fraction and size of carbon packets with graphitic nature in the SiC fiber decreased. The microstructures of SiCf/SiC composites irradiated with 400 keV C+ and then 200 keV He+ at 633 K and annealed post-irradiation at 1073, 1273, and 1473 K for 5 h were analyzed. The SiCf/SiC composites were composed of nanocrystal SiC fibers with 5–25 μm in size, SiC matrix with a columnar crystal structure, and six transition layers (alternate distribution of pyrolytic carbon and SiC layers) between them. Several fine microcracks induced by irradiation appeared at the interfaces and grew during annealing. An irradiation band with a few helium bubbles was formed in the SiC fiber and had a width of approximately 260 nm, which decreased with increase in annealing temperature. Annealing caused the irradiation-induced bubbles to grow and induced a linear arrangement of the bubbles in the SiC fiber. Larger He bubbles were generated at the grain boundary and tended to form microcracks in the SiC matrix. Irradiation did not cause obvious amorphization at 633 K and annealing did not induce nanograin growth. After irradiation, the area fraction and size of carbon packets with graphitic nature in the SiC fiber decreased. SiCf/SiC composites Elsevier Bubbles Elsevier Annealing Elsevier Ion irradiation Elsevier Microstructure Elsevier Ran, Guang oth He, Zongbei oth Ye, Chao oth Li, Yipeng oth Liu, Xinyi oth Chen, Yang oth Chen, Zhaoke oth Cong, Shuo oth Zhang, Ruiqian oth Huang, Xiuyin oth Enthalten in Elsevier Science Rey, F. ELSEVIER Soil and water bioengineering: Practice and research needs for reconciling natural hazard control and ecological restoration 2018 Amsterdam [u.a.] (DE-627)ELV000899798 volume:47 year:2021 number:6 day:15 month:03 pages:8408-8415 extent:8 https://doi.org/10.1016/j.ceramint.2020.11.205 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA SSG-OPC-GGO 43.12 Umweltchemie VZ 43.13 Umwelttoxikologie VZ 44.13 Medizinische Ökologie VZ AR 47 2021 6 15 0315 8408-8415 8 |
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10.1016/j.ceramint.2020.11.205 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001677.pica (DE-627)ELV053185161 (ELSEVIER)S0272-8842(20)33540-9 DE-627 ger DE-627 rakwb eng 333.7 610 VZ 43.12 bkl 43.13 bkl 44.13 bkl Liu, Guiliang verfasserin aut Microstructure characteristics of C+ and He+ irradiated SiCf/SiC composites before and after annealing 2021transfer abstract 8 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The microstructures of SiCf/SiC composites irradiated with 400 keV C+ and then 200 keV He+ at 633 K and annealed post-irradiation at 1073, 1273, and 1473 K for 5 h were analyzed. The SiCf/SiC composites were composed of nanocrystal SiC fibers with 5–25 μm in size, SiC matrix with a columnar crystal structure, and six transition layers (alternate distribution of pyrolytic carbon and SiC layers) between them. Several fine microcracks induced by irradiation appeared at the interfaces and grew during annealing. An irradiation band with a few helium bubbles was formed in the SiC fiber and had a width of approximately 260 nm, which decreased with increase in annealing temperature. Annealing caused the irradiation-induced bubbles to grow and induced a linear arrangement of the bubbles in the SiC fiber. Larger He bubbles were generated at the grain boundary and tended to form microcracks in the SiC matrix. Irradiation did not cause obvious amorphization at 633 K and annealing did not induce nanograin growth. After irradiation, the area fraction and size of carbon packets with graphitic nature in the SiC fiber decreased. The microstructures of SiCf/SiC composites irradiated with 400 keV C+ and then 200 keV He+ at 633 K and annealed post-irradiation at 1073, 1273, and 1473 K for 5 h were analyzed. The SiCf/SiC composites were composed of nanocrystal SiC fibers with 5–25 μm in size, SiC matrix with a columnar crystal structure, and six transition layers (alternate distribution of pyrolytic carbon and SiC layers) between them. Several fine microcracks induced by irradiation appeared at the interfaces and grew during annealing. An irradiation band with a few helium bubbles was formed in the SiC fiber and had a width of approximately 260 nm, which decreased with increase in annealing temperature. Annealing caused the irradiation-induced bubbles to grow and induced a linear arrangement of the bubbles in the SiC fiber. Larger He bubbles were generated at the grain boundary and tended to form microcracks in the SiC matrix. Irradiation did not cause obvious amorphization at 633 K and annealing did not induce nanograin growth. After irradiation, the area fraction and size of carbon packets with graphitic nature in the SiC fiber decreased. SiCf/SiC composites Elsevier Bubbles Elsevier Annealing Elsevier Ion irradiation Elsevier Microstructure Elsevier Ran, Guang oth He, Zongbei oth Ye, Chao oth Li, Yipeng oth Liu, Xinyi oth Chen, Yang oth Chen, Zhaoke oth Cong, Shuo oth Zhang, Ruiqian oth Huang, Xiuyin oth Enthalten in Elsevier Science Rey, F. ELSEVIER Soil and water bioengineering: Practice and research needs for reconciling natural hazard control and ecological restoration 2018 Amsterdam [u.a.] (DE-627)ELV000899798 volume:47 year:2021 number:6 day:15 month:03 pages:8408-8415 extent:8 https://doi.org/10.1016/j.ceramint.2020.11.205 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA SSG-OPC-GGO 43.12 Umweltchemie VZ 43.13 Umwelttoxikologie VZ 44.13 Medizinische Ökologie VZ AR 47 2021 6 15 0315 8408-8415 8 |
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10.1016/j.ceramint.2020.11.205 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001677.pica (DE-627)ELV053185161 (ELSEVIER)S0272-8842(20)33540-9 DE-627 ger DE-627 rakwb eng 333.7 610 VZ 43.12 bkl 43.13 bkl 44.13 bkl Liu, Guiliang verfasserin aut Microstructure characteristics of C+ and He+ irradiated SiCf/SiC composites before and after annealing 2021transfer abstract 8 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The microstructures of SiCf/SiC composites irradiated with 400 keV C+ and then 200 keV He+ at 633 K and annealed post-irradiation at 1073, 1273, and 1473 K for 5 h were analyzed. The SiCf/SiC composites were composed of nanocrystal SiC fibers with 5–25 μm in size, SiC matrix with a columnar crystal structure, and six transition layers (alternate distribution of pyrolytic carbon and SiC layers) between them. Several fine microcracks induced by irradiation appeared at the interfaces and grew during annealing. An irradiation band with a few helium bubbles was formed in the SiC fiber and had a width of approximately 260 nm, which decreased with increase in annealing temperature. Annealing caused the irradiation-induced bubbles to grow and induced a linear arrangement of the bubbles in the SiC fiber. Larger He bubbles were generated at the grain boundary and tended to form microcracks in the SiC matrix. Irradiation did not cause obvious amorphization at 633 K and annealing did not induce nanograin growth. After irradiation, the area fraction and size of carbon packets with graphitic nature in the SiC fiber decreased. The microstructures of SiCf/SiC composites irradiated with 400 keV C+ and then 200 keV He+ at 633 K and annealed post-irradiation at 1073, 1273, and 1473 K for 5 h were analyzed. The SiCf/SiC composites were composed of nanocrystal SiC fibers with 5–25 μm in size, SiC matrix with a columnar crystal structure, and six transition layers (alternate distribution of pyrolytic carbon and SiC layers) between them. Several fine microcracks induced by irradiation appeared at the interfaces and grew during annealing. An irradiation band with a few helium bubbles was formed in the SiC fiber and had a width of approximately 260 nm, which decreased with increase in annealing temperature. Annealing caused the irradiation-induced bubbles to grow and induced a linear arrangement of the bubbles in the SiC fiber. Larger He bubbles were generated at the grain boundary and tended to form microcracks in the SiC matrix. Irradiation did not cause obvious amorphization at 633 K and annealing did not induce nanograin growth. After irradiation, the area fraction and size of carbon packets with graphitic nature in the SiC fiber decreased. SiCf/SiC composites Elsevier Bubbles Elsevier Annealing Elsevier Ion irradiation Elsevier Microstructure Elsevier Ran, Guang oth He, Zongbei oth Ye, Chao oth Li, Yipeng oth Liu, Xinyi oth Chen, Yang oth Chen, Zhaoke oth Cong, Shuo oth Zhang, Ruiqian oth Huang, Xiuyin oth Enthalten in Elsevier Science Rey, F. ELSEVIER Soil and water bioengineering: Practice and research needs for reconciling natural hazard control and ecological restoration 2018 Amsterdam [u.a.] (DE-627)ELV000899798 volume:47 year:2021 number:6 day:15 month:03 pages:8408-8415 extent:8 https://doi.org/10.1016/j.ceramint.2020.11.205 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA SSG-OPC-GGO 43.12 Umweltchemie VZ 43.13 Umwelttoxikologie VZ 44.13 Medizinische Ökologie VZ AR 47 2021 6 15 0315 8408-8415 8 |
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Enthalten in Soil and water bioengineering: Practice and research needs for reconciling natural hazard control and ecological restoration Amsterdam [u.a.] volume:47 year:2021 number:6 day:15 month:03 pages:8408-8415 extent:8 |
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microstructure characteristics of c+ and he+ irradiated sicf/sic composites before and after annealing |
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Microstructure characteristics of C+ and He+ irradiated SiCf/SiC composites before and after annealing |
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The microstructures of SiCf/SiC composites irradiated with 400 keV C+ and then 200 keV He+ at 633 K and annealed post-irradiation at 1073, 1273, and 1473 K for 5 h were analyzed. The SiCf/SiC composites were composed of nanocrystal SiC fibers with 5–25 μm in size, SiC matrix with a columnar crystal structure, and six transition layers (alternate distribution of pyrolytic carbon and SiC layers) between them. Several fine microcracks induced by irradiation appeared at the interfaces and grew during annealing. An irradiation band with a few helium bubbles was formed in the SiC fiber and had a width of approximately 260 nm, which decreased with increase in annealing temperature. Annealing caused the irradiation-induced bubbles to grow and induced a linear arrangement of the bubbles in the SiC fiber. Larger He bubbles were generated at the grain boundary and tended to form microcracks in the SiC matrix. Irradiation did not cause obvious amorphization at 633 K and annealing did not induce nanograin growth. After irradiation, the area fraction and size of carbon packets with graphitic nature in the SiC fiber decreased. |
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The microstructures of SiCf/SiC composites irradiated with 400 keV C+ and then 200 keV He+ at 633 K and annealed post-irradiation at 1073, 1273, and 1473 K for 5 h were analyzed. The SiCf/SiC composites were composed of nanocrystal SiC fibers with 5–25 μm in size, SiC matrix with a columnar crystal structure, and six transition layers (alternate distribution of pyrolytic carbon and SiC layers) between them. Several fine microcracks induced by irradiation appeared at the interfaces and grew during annealing. An irradiation band with a few helium bubbles was formed in the SiC fiber and had a width of approximately 260 nm, which decreased with increase in annealing temperature. Annealing caused the irradiation-induced bubbles to grow and induced a linear arrangement of the bubbles in the SiC fiber. Larger He bubbles were generated at the grain boundary and tended to form microcracks in the SiC matrix. Irradiation did not cause obvious amorphization at 633 K and annealing did not induce nanograin growth. After irradiation, the area fraction and size of carbon packets with graphitic nature in the SiC fiber decreased. |
| abstract_unstemmed |
The microstructures of SiCf/SiC composites irradiated with 400 keV C+ and then 200 keV He+ at 633 K and annealed post-irradiation at 1073, 1273, and 1473 K for 5 h were analyzed. The SiCf/SiC composites were composed of nanocrystal SiC fibers with 5–25 μm in size, SiC matrix with a columnar crystal structure, and six transition layers (alternate distribution of pyrolytic carbon and SiC layers) between them. Several fine microcracks induced by irradiation appeared at the interfaces and grew during annealing. An irradiation band with a few helium bubbles was formed in the SiC fiber and had a width of approximately 260 nm, which decreased with increase in annealing temperature. Annealing caused the irradiation-induced bubbles to grow and induced a linear arrangement of the bubbles in the SiC fiber. Larger He bubbles were generated at the grain boundary and tended to form microcracks in the SiC matrix. Irradiation did not cause obvious amorphization at 633 K and annealing did not induce nanograin growth. After irradiation, the area fraction and size of carbon packets with graphitic nature in the SiC fiber decreased. |
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Microstructure characteristics of C+ and He+ irradiated SiCf/SiC composites before and after annealing |
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Annealing caused the irradiation-induced bubbles to grow and induced a linear arrangement of the bubbles in the SiC fiber. Larger He bubbles were generated at the grain boundary and tended to form microcracks in the SiC matrix. Irradiation did not cause obvious amorphization at 633 K and annealing did not induce nanograin growth. 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