Substrate-mediated growth of oriented, vertically aligned MoS 2 nanosheets on vicinal and on-axis SiC substrates

The layer- and morphology-dependent properties of two-dimensional molybdenum disulfide (MoS2) have established its relevance across broad applications in electronics, optoelectronics, sensing, and catalysis. Understanding how to manipulate the material growth to achieve the desired properties is the...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Bradford, Jonathan [verfasserIn] Zaganelli, Aurora [verfasserIn] Qi, Dongchen [verfasserIn] Zebardastan, Negar [verfasserIn] Shafiei, Mahnaz [verfasserIn] MacLeod, Jennifer [verfasserIn] Motta, Nunzio [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2021

Schlagwörter:	Transition metal dichalcogenides Near-edge X-ray absorption fine structure Chemical vapor deposition Photoemission spectroscopy molybdenum disulfide Silicon carbide

Übergeordnetes Werk:	Enthalten in: Applied surface science - Amsterdam : Elsevier, 1985, 552
Übergeordnetes Werk:	volume:552

DOI / URN:	10.1016/j.apsusc.2021.149303

Katalog-ID:	ELV053639642

Internformat


LEADER	01000caa a22002652 4500
001	ELV053639642
003	DE-627
005	20240104093516.0
007	cr uuu---uuuuu
008	210910s2021 xx \|\|\|\|\|o 00\| \|\|eng c
024	7		\|a 10.1016/j.apsusc.2021.149303 \|2 doi
035			\|a (DE-627)ELV053639642
035			\|a (ELSEVIER)S0169-4332(21)00379-2
040			\|a DE-627 \|b ger \|c DE-627 \|e rda
041			\|a eng
082	0	4	\|a 670 \|a 530 \|a 660 \|q VZ
084			\|a 33.68 \|2 bkl
084			\|a 35.18 \|2 bkl
084			\|a 52.78 \|2 bkl
100	1		\|a Bradford, Jonathan \|e verfasserin \|4 aut
245	1	0	\|a Substrate-mediated growth of oriented, vertically aligned MoS 2 nanosheets on vicinal and on-axis SiC substrates
264		1	\|c 2021
336			\|a nicht spezifiziert \|b zzz \|2 rdacontent
337			\|a Computermedien \|b c \|2 rdamedia
338			\|a Online-Ressource \|b cr \|2 rdacarrier
520			\|a The layer- and morphology-dependent properties of two-dimensional molybdenum disulfide (MoS2) have established its relevance across broad applications in electronics, optoelectronics, sensing, and catalysis. Understanding how to manipulate the material growth to achieve the desired properties is the key to tailoring the material towards a specific application. In this work, we investigate the growth of vertically standing MoS2 nanosheets by chemical vapor deposition on vicinal and on-axis 4H-SiC (0001) substrates. In both cases the MoS2 flakes exhibit three preferred orientations, aligning with the 〈 11 2 ¯ 0 〉 substrate directions due to strain minimization of a MoO2 intermediate phase. Whereas MoS2 grown on vicinal SiC substrates exhibits strict near-vertical alignment, scanning electron microscopy and near-edge X-ray absorption fine structure (NEXAFS) measurements indicate a near-random vertical orientation when MoS2 is grown on on-axis SiC. Photoemission spectroscopy and NEXAFS measurements indicate the presence of defects and disordered edges which establish the suitability of the material for applications in sensing and catalysis.
650		4	\|a Transition metal dichalcogenides
650		4	\|a Near-edge X-ray absorption fine structure
650		4	\|a Chemical vapor deposition
650		4	\|a Photoemission spectroscopy
650		4	\|a molybdenum disulfide
650		4	\|a Silicon carbide
700	1		\|a Zaganelli, Aurora \|e verfasserin \|4 aut
700	1		\|a Qi, Dongchen \|e verfasserin \|4 aut
700	1		\|a Zebardastan, Negar \|e verfasserin \|4 aut
700	1		\|a Shafiei, Mahnaz \|e verfasserin \|4 aut
700	1		\|a MacLeod, Jennifer \|e verfasserin \|4 aut
700	1		\|a Motta, Nunzio \|e verfasserin \|4 aut
773	0	8	\|i Enthalten in \|t Applied surface science \|d Amsterdam : Elsevier, 1985 \|g 552 \|h Online-Ressource \|w (DE-627)312151128 \|w (DE-600)2002520-8 \|w (DE-576)094476985 \|7 nnns
773	1	8	\|g volume:552
912			\|a GBV_USEFLAG_U
912			\|a GBV_ELV
912			\|a SYSFLAG_U
912			\|a SSG-OLC-PHA
912			\|a GBV_ILN_20
912			\|a GBV_ILN_22
912			\|a GBV_ILN_23
912			\|a GBV_ILN_24
912			\|a GBV_ILN_31
912			\|a GBV_ILN_32
912			\|a GBV_ILN_40
912			\|a GBV_ILN_60
912			\|a GBV_ILN_62
912			\|a GBV_ILN_63
912			\|a GBV_ILN_65
912			\|a GBV_ILN_69
912			\|a GBV_ILN_70
912			\|a GBV_ILN_73
912			\|a GBV_ILN_74
912			\|a GBV_ILN_90
912			\|a GBV_ILN_95
912			\|a GBV_ILN_100
912			\|a GBV_ILN_101
912			\|a GBV_ILN_105
912			\|a GBV_ILN_110
912			\|a GBV_ILN_150
912			\|a GBV_ILN_151
912			\|a GBV_ILN_224
912			\|a GBV_ILN_370
912			\|a GBV_ILN_602
912			\|a GBV_ILN_702
912			\|a GBV_ILN_2003
912			\|a GBV_ILN_2004
912			\|a GBV_ILN_2005
912			\|a GBV_ILN_2011
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2015
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_2021
912			\|a GBV_ILN_2025
912			\|a GBV_ILN_2027
912			\|a GBV_ILN_2034
912			\|a GBV_ILN_2038
912			\|a GBV_ILN_2044
912			\|a GBV_ILN_2048
912			\|a GBV_ILN_2049
912			\|a GBV_ILN_2050
912			\|a GBV_ILN_2056
912			\|a GBV_ILN_2059
912			\|a GBV_ILN_2061
912			\|a GBV_ILN_2064
912			\|a GBV_ILN_2065
912			\|a GBV_ILN_2068
912			\|a GBV_ILN_2111
912			\|a GBV_ILN_2112
912			\|a GBV_ILN_2113
912			\|a GBV_ILN_2118
912			\|a GBV_ILN_2122
912			\|a GBV_ILN_2129
912			\|a GBV_ILN_2143
912			\|a GBV_ILN_2147
912			\|a GBV_ILN_2148
912			\|a GBV_ILN_2152
912			\|a GBV_ILN_2153
912			\|a GBV_ILN_2190
912			\|a GBV_ILN_2336
912			\|a GBV_ILN_2507
912			\|a GBV_ILN_2522
912			\|a GBV_ILN_4035
912			\|a GBV_ILN_4037
912			\|a GBV_ILN_4112
912			\|a GBV_ILN_4125
912			\|a GBV_ILN_4126
912			\|a GBV_ILN_4242
912			\|a GBV_ILN_4251
912			\|a GBV_ILN_4305
912			\|a GBV_ILN_4313
912			\|a GBV_ILN_4323
912			\|a GBV_ILN_4324
912			\|a GBV_ILN_4325
912			\|a GBV_ILN_4326
912			\|a GBV_ILN_4333
912			\|a GBV_ILN_4334
912			\|a GBV_ILN_4335
912			\|a GBV_ILN_4338
912			\|a GBV_ILN_4393
936	b	k	\|a 33.68 \|j Oberflächen \|j Dünne Schichten \|j Grenzflächen \|x Physik \|q VZ
936	b	k	\|a 35.18 \|j Kolloidchemie \|j Grenzflächenchemie \|q VZ
936	b	k	\|a 52.78 \|j Oberflächentechnik \|j Wärmebehandlung \|q VZ
951			\|a AR
952			\|d 552

Indexfelder

author_variant	j b jb a z az d q dq n z nz m s ms j m jm n m nm
matchkey_str	bradfordjonathanzaganelliauroraqidongche:2021----:usrtmdaegotooinevrialaindo2aohesni
hierarchy_sort_str	2021
bklnumber	33.68 35.18 52.78
publishDate	2021
allfields	10.1016/j.apsusc.2021.149303 doi (DE-627)ELV053639642 (ELSEVIER)S0169-4332(21)00379-2 DE-627 ger DE-627 rda eng 670 530 660 VZ 33.68 bkl 35.18 bkl 52.78 bkl Bradford, Jonathan verfasserin aut Substrate-mediated growth of oriented, vertically aligned MoS 2 nanosheets on vicinal and on-axis SiC substrates 2021 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The layer- and morphology-dependent properties of two-dimensional molybdenum disulfide (MoS2) have established its relevance across broad applications in electronics, optoelectronics, sensing, and catalysis. Understanding how to manipulate the material growth to achieve the desired properties is the key to tailoring the material towards a specific application. In this work, we investigate the growth of vertically standing MoS2 nanosheets by chemical vapor deposition on vicinal and on-axis 4H-SiC (0001) substrates. In both cases the MoS2 flakes exhibit three preferred orientations, aligning with the 〈 11 2 ¯ 0 〉 substrate directions due to strain minimization of a MoO2 intermediate phase. Whereas MoS2 grown on vicinal SiC substrates exhibits strict near-vertical alignment, scanning electron microscopy and near-edge X-ray absorption fine structure (NEXAFS) measurements indicate a near-random vertical orientation when MoS2 is grown on on-axis SiC. Photoemission spectroscopy and NEXAFS measurements indicate the presence of defects and disordered edges which establish the suitability of the material for applications in sensing and catalysis. Transition metal dichalcogenides Near-edge X-ray absorption fine structure Chemical vapor deposition Photoemission spectroscopy molybdenum disulfide Silicon carbide Zaganelli, Aurora verfasserin aut Qi, Dongchen verfasserin aut Zebardastan, Negar verfasserin aut Shafiei, Mahnaz verfasserin aut MacLeod, Jennifer verfasserin aut Motta, Nunzio verfasserin aut Enthalten in Applied surface science Amsterdam : Elsevier, 1985 552 Online-Ressource (DE-627)312151128 (DE-600)2002520-8 (DE-576)094476985 nnns volume:552 GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.68 Oberflächen Dünne Schichten Grenzflächen Physik VZ 35.18 Kolloidchemie Grenzflächenchemie VZ 52.78 Oberflächentechnik Wärmebehandlung VZ AR 552
spelling	10.1016/j.apsusc.2021.149303 doi (DE-627)ELV053639642 (ELSEVIER)S0169-4332(21)00379-2 DE-627 ger DE-627 rda eng 670 530 660 VZ 33.68 bkl 35.18 bkl 52.78 bkl Bradford, Jonathan verfasserin aut Substrate-mediated growth of oriented, vertically aligned MoS 2 nanosheets on vicinal and on-axis SiC substrates 2021 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The layer- and morphology-dependent properties of two-dimensional molybdenum disulfide (MoS2) have established its relevance across broad applications in electronics, optoelectronics, sensing, and catalysis. Understanding how to manipulate the material growth to achieve the desired properties is the key to tailoring the material towards a specific application. In this work, we investigate the growth of vertically standing MoS2 nanosheets by chemical vapor deposition on vicinal and on-axis 4H-SiC (0001) substrates. In both cases the MoS2 flakes exhibit three preferred orientations, aligning with the 〈 11 2 ¯ 0 〉 substrate directions due to strain minimization of a MoO2 intermediate phase. Whereas MoS2 grown on vicinal SiC substrates exhibits strict near-vertical alignment, scanning electron microscopy and near-edge X-ray absorption fine structure (NEXAFS) measurements indicate a near-random vertical orientation when MoS2 is grown on on-axis SiC. Photoemission spectroscopy and NEXAFS measurements indicate the presence of defects and disordered edges which establish the suitability of the material for applications in sensing and catalysis. Transition metal dichalcogenides Near-edge X-ray absorption fine structure Chemical vapor deposition Photoemission spectroscopy molybdenum disulfide Silicon carbide Zaganelli, Aurora verfasserin aut Qi, Dongchen verfasserin aut Zebardastan, Negar verfasserin aut Shafiei, Mahnaz verfasserin aut MacLeod, Jennifer verfasserin aut Motta, Nunzio verfasserin aut Enthalten in Applied surface science Amsterdam : Elsevier, 1985 552 Online-Ressource (DE-627)312151128 (DE-600)2002520-8 (DE-576)094476985 nnns volume:552 GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.68 Oberflächen Dünne Schichten Grenzflächen Physik VZ 35.18 Kolloidchemie Grenzflächenchemie VZ 52.78 Oberflächentechnik Wärmebehandlung VZ AR 552
allfields_unstemmed	10.1016/j.apsusc.2021.149303 doi (DE-627)ELV053639642 (ELSEVIER)S0169-4332(21)00379-2 DE-627 ger DE-627 rda eng 670 530 660 VZ 33.68 bkl 35.18 bkl 52.78 bkl Bradford, Jonathan verfasserin aut Substrate-mediated growth of oriented, vertically aligned MoS 2 nanosheets on vicinal and on-axis SiC substrates 2021 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The layer- and morphology-dependent properties of two-dimensional molybdenum disulfide (MoS2) have established its relevance across broad applications in electronics, optoelectronics, sensing, and catalysis. Understanding how to manipulate the material growth to achieve the desired properties is the key to tailoring the material towards a specific application. In this work, we investigate the growth of vertically standing MoS2 nanosheets by chemical vapor deposition on vicinal and on-axis 4H-SiC (0001) substrates. In both cases the MoS2 flakes exhibit three preferred orientations, aligning with the 〈 11 2 ¯ 0 〉 substrate directions due to strain minimization of a MoO2 intermediate phase. Whereas MoS2 grown on vicinal SiC substrates exhibits strict near-vertical alignment, scanning electron microscopy and near-edge X-ray absorption fine structure (NEXAFS) measurements indicate a near-random vertical orientation when MoS2 is grown on on-axis SiC. Photoemission spectroscopy and NEXAFS measurements indicate the presence of defects and disordered edges which establish the suitability of the material for applications in sensing and catalysis. Transition metal dichalcogenides Near-edge X-ray absorption fine structure Chemical vapor deposition Photoemission spectroscopy molybdenum disulfide Silicon carbide Zaganelli, Aurora verfasserin aut Qi, Dongchen verfasserin aut Zebardastan, Negar verfasserin aut Shafiei, Mahnaz verfasserin aut MacLeod, Jennifer verfasserin aut Motta, Nunzio verfasserin aut Enthalten in Applied surface science Amsterdam : Elsevier, 1985 552 Online-Ressource (DE-627)312151128 (DE-600)2002520-8 (DE-576)094476985 nnns volume:552 GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.68 Oberflächen Dünne Schichten Grenzflächen Physik VZ 35.18 Kolloidchemie Grenzflächenchemie VZ 52.78 Oberflächentechnik Wärmebehandlung VZ AR 552
allfieldsGer	10.1016/j.apsusc.2021.149303 doi (DE-627)ELV053639642 (ELSEVIER)S0169-4332(21)00379-2 DE-627 ger DE-627 rda eng 670 530 660 VZ 33.68 bkl 35.18 bkl 52.78 bkl Bradford, Jonathan verfasserin aut Substrate-mediated growth of oriented, vertically aligned MoS 2 nanosheets on vicinal and on-axis SiC substrates 2021 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The layer- and morphology-dependent properties of two-dimensional molybdenum disulfide (MoS2) have established its relevance across broad applications in electronics, optoelectronics, sensing, and catalysis. Understanding how to manipulate the material growth to achieve the desired properties is the key to tailoring the material towards a specific application. In this work, we investigate the growth of vertically standing MoS2 nanosheets by chemical vapor deposition on vicinal and on-axis 4H-SiC (0001) substrates. In both cases the MoS2 flakes exhibit three preferred orientations, aligning with the 〈 11 2 ¯ 0 〉 substrate directions due to strain minimization of a MoO2 intermediate phase. Whereas MoS2 grown on vicinal SiC substrates exhibits strict near-vertical alignment, scanning electron microscopy and near-edge X-ray absorption fine structure (NEXAFS) measurements indicate a near-random vertical orientation when MoS2 is grown on on-axis SiC. Photoemission spectroscopy and NEXAFS measurements indicate the presence of defects and disordered edges which establish the suitability of the material for applications in sensing and catalysis. Transition metal dichalcogenides Near-edge X-ray absorption fine structure Chemical vapor deposition Photoemission spectroscopy molybdenum disulfide Silicon carbide Zaganelli, Aurora verfasserin aut Qi, Dongchen verfasserin aut Zebardastan, Negar verfasserin aut Shafiei, Mahnaz verfasserin aut MacLeod, Jennifer verfasserin aut Motta, Nunzio verfasserin aut Enthalten in Applied surface science Amsterdam : Elsevier, 1985 552 Online-Ressource (DE-627)312151128 (DE-600)2002520-8 (DE-576)094476985 nnns volume:552 GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.68 Oberflächen Dünne Schichten Grenzflächen Physik VZ 35.18 Kolloidchemie Grenzflächenchemie VZ 52.78 Oberflächentechnik Wärmebehandlung VZ AR 552
allfieldsSound	10.1016/j.apsusc.2021.149303 doi (DE-627)ELV053639642 (ELSEVIER)S0169-4332(21)00379-2 DE-627 ger DE-627 rda eng 670 530 660 VZ 33.68 bkl 35.18 bkl 52.78 bkl Bradford, Jonathan verfasserin aut Substrate-mediated growth of oriented, vertically aligned MoS 2 nanosheets on vicinal and on-axis SiC substrates 2021 nicht spezifiziert zzz rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier The layer- and morphology-dependent properties of two-dimensional molybdenum disulfide (MoS2) have established its relevance across broad applications in electronics, optoelectronics, sensing, and catalysis. Understanding how to manipulate the material growth to achieve the desired properties is the key to tailoring the material towards a specific application. In this work, we investigate the growth of vertically standing MoS2 nanosheets by chemical vapor deposition on vicinal and on-axis 4H-SiC (0001) substrates. In both cases the MoS2 flakes exhibit three preferred orientations, aligning with the 〈 11 2 ¯ 0 〉 substrate directions due to strain minimization of a MoO2 intermediate phase. Whereas MoS2 grown on vicinal SiC substrates exhibits strict near-vertical alignment, scanning electron microscopy and near-edge X-ray absorption fine structure (NEXAFS) measurements indicate a near-random vertical orientation when MoS2 is grown on on-axis SiC. Photoemission spectroscopy and NEXAFS measurements indicate the presence of defects and disordered edges which establish the suitability of the material for applications in sensing and catalysis. Transition metal dichalcogenides Near-edge X-ray absorption fine structure Chemical vapor deposition Photoemission spectroscopy molybdenum disulfide Silicon carbide Zaganelli, Aurora verfasserin aut Qi, Dongchen verfasserin aut Zebardastan, Negar verfasserin aut Shafiei, Mahnaz verfasserin aut MacLeod, Jennifer verfasserin aut Motta, Nunzio verfasserin aut Enthalten in Applied surface science Amsterdam : Elsevier, 1985 552 Online-Ressource (DE-627)312151128 (DE-600)2002520-8 (DE-576)094476985 nnns volume:552 GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393 33.68 Oberflächen Dünne Schichten Grenzflächen Physik VZ 35.18 Kolloidchemie Grenzflächenchemie VZ 52.78 Oberflächentechnik Wärmebehandlung VZ AR 552
language	English
source	Enthalten in Applied surface science 552 volume:552
sourceStr	Enthalten in Applied surface science 552 volume:552
format_phy_str_mv	Article
bklname	Oberflächen Dünne Schichten Grenzflächen Kolloidchemie Grenzflächenchemie Oberflächentechnik Wärmebehandlung
institution	findex.gbv.de
topic_facet	Transition metal dichalcogenides Near-edge X-ray absorption fine structure Chemical vapor deposition Photoemission spectroscopy molybdenum disulfide Silicon carbide
dewey-raw	670
isfreeaccess_bool	false
container_title	Applied surface science
authorswithroles_txt_mv	Bradford, Jonathan @@aut@@ Zaganelli, Aurora @@aut@@ Qi, Dongchen @@aut@@ Zebardastan, Negar @@aut@@ Shafiei, Mahnaz @@aut@@ MacLeod, Jennifer @@aut@@ Motta, Nunzio @@aut@@
publishDateDaySort_date	2021-01-01T00:00:00Z
hierarchy_top_id	312151128
dewey-sort	3670
id	ELV053639642
language_de	englisch
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV053639642</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20240104093516.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">210910s2021 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.apsusc.2021.149303</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV053639642</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S0169-4332(21)00379-2</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="a">530</subfield><subfield code="a">660</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.68</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">35.18</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">52.78</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Bradford, Jonathan</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Substrate-mediated growth of oriented, vertically aligned MoS 2 nanosheets on vicinal and on-axis SiC substrates</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2021</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">The layer- and morphology-dependent properties of two-dimensional molybdenum disulfide (MoS2) have established its relevance across broad applications in electronics, optoelectronics, sensing, and catalysis. Understanding how to manipulate the material growth to achieve the desired properties is the key to tailoring the material towards a specific application. In this work, we investigate the growth of vertically standing MoS2 nanosheets by chemical vapor deposition on vicinal and on-axis 4H-SiC (0001) substrates. In both cases the MoS2 flakes exhibit three preferred orientations, aligning with the 〈 11 2 ¯ 0 〉 substrate directions due to strain minimization of a MoO2 intermediate phase. Whereas MoS2 grown on vicinal SiC substrates exhibits strict near-vertical alignment, scanning electron microscopy and near-edge X-ray absorption fine structure (NEXAFS) measurements indicate a near-random vertical orientation when MoS2 is grown on on-axis SiC. Photoemission spectroscopy and NEXAFS measurements indicate the presence of defects and disordered edges which establish the suitability of the material for applications in sensing and catalysis.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Transition metal dichalcogenides</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Near-edge X-ray absorption fine structure</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Chemical vapor deposition</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Photoemission spectroscopy</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">molybdenum disulfide</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Silicon carbide</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zaganelli, Aurora</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Qi, Dongchen</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zebardastan, Negar</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Shafiei, Mahnaz</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">MacLeod, Jennifer</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Motta, Nunzio</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Applied surface science</subfield><subfield code="d">Amsterdam : Elsevier, 1985</subfield><subfield code="g">552</subfield><subfield code="h">Online-Ressource</subfield><subfield code="w">(DE-627)312151128</subfield><subfield code="w">(DE-600)2002520-8</subfield><subfield code="w">(DE-576)094476985</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:552</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHA</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_74</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_90</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_100</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_101</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_150</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_224</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_702</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2003</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2011</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2025</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2027</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2034</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2038</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2044</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2048</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2049</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2050</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2056</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2059</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2061</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2064</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2065</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2068</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2111</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2113</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2118</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2122</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2129</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2143</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2147</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2148</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2152</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2153</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2190</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2336</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2507</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2522</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4035</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4242</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4251</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4326</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4333</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4334</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4393</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">33.68</subfield><subfield code="j">Oberflächen</subfield><subfield code="j">Dünne Schichten</subfield><subfield code="j">Grenzflächen</subfield><subfield code="x">Physik</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">35.18</subfield><subfield code="j">Kolloidchemie</subfield><subfield code="j">Grenzflächenchemie</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">52.78</subfield><subfield code="j">Oberflächentechnik</subfield><subfield code="j">Wärmebehandlung</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">552</subfield></datafield></record></collection>
author	Bradford, Jonathan
spellingShingle	Bradford, Jonathan ddc 670 bkl 33.68 bkl 35.18 bkl 52.78 misc Transition metal dichalcogenides misc Near-edge X-ray absorption fine structure misc Chemical vapor deposition misc Photoemission spectroscopy misc molybdenum disulfide misc Silicon carbide Substrate-mediated growth of oriented, vertically aligned MoS 2 nanosheets on vicinal and on-axis SiC substrates
authorStr	Bradford, Jonathan
ppnlink_with_tag_str_mv	@@773@@(DE-627)312151128
format	electronic Article
dewey-ones	670 - Manufacturing 530 - Physics 660 - Chemical engineering
delete_txt_mv	keep
author_role	aut aut aut aut aut aut aut
collection	elsevier
remote_str	true
illustrated	Not Illustrated
topic_title	670 530 660 VZ 33.68 bkl 35.18 bkl 52.78 bkl Substrate-mediated growth of oriented, vertically aligned MoS 2 nanosheets on vicinal and on-axis SiC substrates Transition metal dichalcogenides Near-edge X-ray absorption fine structure Chemical vapor deposition Photoemission spectroscopy molybdenum disulfide Silicon carbide
topic	ddc 670 bkl 33.68 bkl 35.18 bkl 52.78 misc Transition metal dichalcogenides misc Near-edge X-ray absorption fine structure misc Chemical vapor deposition misc Photoemission spectroscopy misc molybdenum disulfide misc Silicon carbide
topic_unstemmed	ddc 670 bkl 33.68 bkl 35.18 bkl 52.78 misc Transition metal dichalcogenides misc Near-edge X-ray absorption fine structure misc Chemical vapor deposition misc Photoemission spectroscopy misc molybdenum disulfide misc Silicon carbide
topic_browse	ddc 670 bkl 33.68 bkl 35.18 bkl 52.78 misc Transition metal dichalcogenides misc Near-edge X-ray absorption fine structure misc Chemical vapor deposition misc Photoemission spectroscopy misc molybdenum disulfide misc Silicon carbide
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	cr
hierarchy_parent_title	Applied surface science
hierarchy_parent_id	312151128
dewey-tens	670 - Manufacturing 530 - Physics 660 - Chemical engineering
hierarchy_top_title	Applied surface science
isfreeaccess_txt	false
familylinks_str_mv	(DE-627)312151128 (DE-600)2002520-8 (DE-576)094476985
title	Substrate-mediated growth of oriented, vertically aligned MoS 2 nanosheets on vicinal and on-axis SiC substrates
ctrlnum	(DE-627)ELV053639642 (ELSEVIER)S0169-4332(21)00379-2
title_full	Substrate-mediated growth of oriented, vertically aligned MoS 2 nanosheets on vicinal and on-axis SiC substrates
author_sort	Bradford, Jonathan
journal	Applied surface science
journalStr	Applied surface science
lang_code	eng
isOA_bool	false
dewey-hundreds	600 - Technology 500 - Science
recordtype	marc
publishDateSort	2021
contenttype_str_mv	zzz
author_browse	Bradford, Jonathan Zaganelli, Aurora Qi, Dongchen Zebardastan, Negar Shafiei, Mahnaz MacLeod, Jennifer Motta, Nunzio
container_volume	552
class	670 530 660 VZ 33.68 bkl 35.18 bkl 52.78 bkl
format_se	Elektronische Aufsätze
author-letter	Bradford, Jonathan
doi_str_mv	10.1016/j.apsusc.2021.149303
dewey-full	670 530 660
author2-role	verfasserin
title_sort	substrate-mediated growth of oriented, vertically aligned mos 2 nanosheets on vicinal and on-axis sic substrates
title_auth	Substrate-mediated growth of oriented, vertically aligned MoS 2 nanosheets on vicinal and on-axis SiC substrates
abstract	The layer- and morphology-dependent properties of two-dimensional molybdenum disulfide (MoS2) have established its relevance across broad applications in electronics, optoelectronics, sensing, and catalysis. Understanding how to manipulate the material growth to achieve the desired properties is the key to tailoring the material towards a specific application. In this work, we investigate the growth of vertically standing MoS2 nanosheets by chemical vapor deposition on vicinal and on-axis 4H-SiC (0001) substrates. In both cases the MoS2 flakes exhibit three preferred orientations, aligning with the 〈 11 2 ¯ 0 〉 substrate directions due to strain minimization of a MoO2 intermediate phase. Whereas MoS2 grown on vicinal SiC substrates exhibits strict near-vertical alignment, scanning electron microscopy and near-edge X-ray absorption fine structure (NEXAFS) measurements indicate a near-random vertical orientation when MoS2 is grown on on-axis SiC. Photoemission spectroscopy and NEXAFS measurements indicate the presence of defects and disordered edges which establish the suitability of the material for applications in sensing and catalysis.
abstractGer	The layer- and morphology-dependent properties of two-dimensional molybdenum disulfide (MoS2) have established its relevance across broad applications in electronics, optoelectronics, sensing, and catalysis. Understanding how to manipulate the material growth to achieve the desired properties is the key to tailoring the material towards a specific application. In this work, we investigate the growth of vertically standing MoS2 nanosheets by chemical vapor deposition on vicinal and on-axis 4H-SiC (0001) substrates. In both cases the MoS2 flakes exhibit three preferred orientations, aligning with the 〈 11 2 ¯ 0 〉 substrate directions due to strain minimization of a MoO2 intermediate phase. Whereas MoS2 grown on vicinal SiC substrates exhibits strict near-vertical alignment, scanning electron microscopy and near-edge X-ray absorption fine structure (NEXAFS) measurements indicate a near-random vertical orientation when MoS2 is grown on on-axis SiC. Photoemission spectroscopy and NEXAFS measurements indicate the presence of defects and disordered edges which establish the suitability of the material for applications in sensing and catalysis.
abstract_unstemmed	The layer- and morphology-dependent properties of two-dimensional molybdenum disulfide (MoS2) have established its relevance across broad applications in electronics, optoelectronics, sensing, and catalysis. Understanding how to manipulate the material growth to achieve the desired properties is the key to tailoring the material towards a specific application. In this work, we investigate the growth of vertically standing MoS2 nanosheets by chemical vapor deposition on vicinal and on-axis 4H-SiC (0001) substrates. In both cases the MoS2 flakes exhibit three preferred orientations, aligning with the 〈 11 2 ¯ 0 〉 substrate directions due to strain minimization of a MoO2 intermediate phase. Whereas MoS2 grown on vicinal SiC substrates exhibits strict near-vertical alignment, scanning electron microscopy and near-edge X-ray absorption fine structure (NEXAFS) measurements indicate a near-random vertical orientation when MoS2 is grown on on-axis SiC. Photoemission spectroscopy and NEXAFS measurements indicate the presence of defects and disordered edges which establish the suitability of the material for applications in sensing and catalysis.
collection_details	GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_150 GBV_ILN_151 GBV_ILN_224 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2027 GBV_ILN_2034 GBV_ILN_2038 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2056 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2118 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2190 GBV_ILN_2336 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4313 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4338 GBV_ILN_4393
title_short	Substrate-mediated growth of oriented, vertically aligned MoS 2 nanosheets on vicinal and on-axis SiC substrates
remote_bool	true
author2	Zaganelli, Aurora Qi, Dongchen Zebardastan, Negar Shafiei, Mahnaz MacLeod, Jennifer Motta, Nunzio
author2Str	Zaganelli, Aurora Qi, Dongchen Zebardastan, Negar Shafiei, Mahnaz MacLeod, Jennifer Motta, Nunzio
ppnlink	312151128
mediatype_str_mv	c
isOA_txt	false
hochschulschrift_bool	false
doi_str	10.1016/j.apsusc.2021.149303
up_date	2024-07-06T19:30:13.382Z
_version_	1803859225093341184
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV053639642</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20240104093516.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">210910s2021 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.apsusc.2021.149303</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV053639642</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S0169-4332(21)00379-2</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">670</subfield><subfield code="a">530</subfield><subfield code="a">660</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.68</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">35.18</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">52.78</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Bradford, Jonathan</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Substrate-mediated growth of oriented, vertically aligned MoS 2 nanosheets on vicinal and on-axis SiC substrates</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2021</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">The layer- and morphology-dependent properties of two-dimensional molybdenum disulfide (MoS2) have established its relevance across broad applications in electronics, optoelectronics, sensing, and catalysis. Understanding how to manipulate the material growth to achieve the desired properties is the key to tailoring the material towards a specific application. In this work, we investigate the growth of vertically standing MoS2 nanosheets by chemical vapor deposition on vicinal and on-axis 4H-SiC (0001) substrates. In both cases the MoS2 flakes exhibit three preferred orientations, aligning with the 〈 11 2 ¯ 0 〉 substrate directions due to strain minimization of a MoO2 intermediate phase. Whereas MoS2 grown on vicinal SiC substrates exhibits strict near-vertical alignment, scanning electron microscopy and near-edge X-ray absorption fine structure (NEXAFS) measurements indicate a near-random vertical orientation when MoS2 is grown on on-axis SiC. Photoemission spectroscopy and NEXAFS measurements indicate the presence of defects and disordered edges which establish the suitability of the material for applications in sensing and catalysis.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Transition metal dichalcogenides</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Near-edge X-ray absorption fine structure</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Chemical vapor deposition</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Photoemission spectroscopy</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">molybdenum disulfide</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Silicon carbide</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zaganelli, Aurora</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Qi, Dongchen</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zebardastan, Negar</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Shafiei, Mahnaz</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">MacLeod, Jennifer</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Motta, Nunzio</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Applied surface science</subfield><subfield code="d">Amsterdam : Elsevier, 1985</subfield><subfield code="g">552</subfield><subfield code="h">Online-Ressource</subfield><subfield code="w">(DE-627)312151128</subfield><subfield code="w">(DE-600)2002520-8</subfield><subfield code="w">(DE-576)094476985</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:552</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHA</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_63</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_74</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_90</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_100</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_101</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_150</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_151</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_224</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_702</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2003</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2004</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2005</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2011</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2014</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2015</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2020</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2021</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2025</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2027</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2034</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2038</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2044</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2048</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2049</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2050</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2056</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2059</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2061</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2064</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2065</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2068</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2111</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2113</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2118</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2122</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2129</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2143</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2147</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2148</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2152</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2153</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2190</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2336</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2507</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_2522</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4035</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4037</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4112</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4125</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4126</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4242</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4251</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4305</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4313</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4323</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4324</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4325</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4326</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4333</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4334</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4335</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4338</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_4393</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">33.68</subfield><subfield code="j">Oberflächen</subfield><subfield code="j">Dünne Schichten</subfield><subfield code="j">Grenzflächen</subfield><subfield code="x">Physik</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">35.18</subfield><subfield code="j">Kolloidchemie</subfield><subfield code="j">Grenzflächenchemie</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">52.78</subfield><subfield code="j">Oberflächentechnik</subfield><subfield code="j">Wärmebehandlung</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">552</subfield></datafield></record></collection>
score	7.398302

Nicht das Richtige dabei?

Schreiben Sie uns!

Substrate-mediated growth of oriented, vertically aligned MoS 2 nanosheets on vicinal and on-axis SiC substrates

Nicht das Richtige dabei?

Zugang & Verfügbarkeit

Vorhandene Bände

Nicht das Richtige dabei?