Performance Optimization of Analog Circuits in Negative Capacitance Transistor Technology
Negative Capacitance Field-Effect Transistor (NC-FET) is one of the emerging technology for the future ultra-low power circuits. NC-FET incorporates a ferroelectric layer within the transistor gate stack, which provides an internal voltage amplification. However, Negative Differential Resistance (ND...
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| Autor*in: |
Prakash, Om [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
2021 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Changes in Cardiorespiratory Fitness and Survival in Patients With or Without Cardiovascular Disease - Kokkinos, Peter ELSEVIER, 2023, Amsterdam [u.a.] |
|---|---|
| Übergeordnetes Werk: |
volume:115 ; year:2021 ; pages:0 |
| Links: |
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| DOI / URN: |
10.1016/j.mejo.2021.105193 |
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| 520 | |a Negative Capacitance Field-Effect Transistor (NC-FET) is one of the emerging technology for the future ultra-low power circuits. NC-FET incorporates a ferroelectric layer within the transistor gate stack, which provides an internal voltage amplification. However, Negative Differential Resistance (NDR), which occurs at thick ferroelectric can deteriorate NC-FET devices in which the drain current, in the saturation region, decreases with drain voltage increase. This noticeably harms the figure of merits of circuits, especially when it comes to analog applications. | ||
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Negative Capacitance Field-Effect Transistor (NC-FET) is one of the emerging technology for the future ultra-low power circuits. NC-FET incorporates a ferroelectric layer within the transistor gate stack, which provides an internal voltage amplification. However, Negative Differential Resistance (NDR), which occurs at thick ferroelectric can deteriorate NC-FET devices in which the drain current, in the saturation region, decreases with drain voltage increase. This noticeably harms the figure of merits of circuits, especially when it comes to analog applications. |
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Negative Capacitance Field-Effect Transistor (NC-FET) is one of the emerging technology for the future ultra-low power circuits. NC-FET incorporates a ferroelectric layer within the transistor gate stack, which provides an internal voltage amplification. However, Negative Differential Resistance (NDR), which occurs at thick ferroelectric can deteriorate NC-FET devices in which the drain current, in the saturation region, decreases with drain voltage increase. This noticeably harms the figure of merits of circuits, especially when it comes to analog applications. |
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Negative Capacitance Field-Effect Transistor (NC-FET) is one of the emerging technology for the future ultra-low power circuits. NC-FET incorporates a ferroelectric layer within the transistor gate stack, which provides an internal voltage amplification. However, Negative Differential Resistance (NDR), which occurs at thick ferroelectric can deteriorate NC-FET devices in which the drain current, in the saturation region, decreases with drain voltage increase. This noticeably harms the figure of merits of circuits, especially when it comes to analog applications. |
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