Design and analysis of a flat gain and linear low noise amplifier using modified current reused structure with feedforward structure
In this paper, a Low Noise Amplifier (LNA) with the current reused topology is proposed for wideband applications. To increase input impedance matching common source with inductive degeneration and RC shunt feedback structure is used. To extend the bandwidth, inductive series peaking technique is ut...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Kazemi, Amir Hossein [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2021transfer abstract |
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| Schlagwörter: |
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| Umfang: |
14 |
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| Übergeordnetes Werk: |
Enthalten in: Functional evaluation of vandetanib metabolism by CYP3A4 variants and potential drug interactions - Han, Mingming ELSEVIER, 2021, Amsterdam [u.a.] |
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| Übergeordnetes Werk: |
volume:81 ; year:2021 ; pages:123-136 ; extent:14 |
| Links: |
|---|
| DOI / URN: |
10.1016/j.vlsi.2021.05.013 |
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| Katalog-ID: |
ELV055225632 |
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| 245 | 1 | 0 | |a Design and analysis of a flat gain and linear low noise amplifier using modified current reused structure with feedforward structure |
| 264 | 1 | |c 2021transfer abstract | |
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| 520 | |a In this paper, a Low Noise Amplifier (LNA) with the current reused topology is proposed for wideband applications. To increase input impedance matching common source with inductive degeneration and RC shunt feedback structure is used. To extend the bandwidth, inductive series peaking technique is utilized. In the next stage, two parallel structure is hired to have a high voltage gain with low power consumption in addition to improve linearity. Also, by using the self-forward-body-bias (SFBB) technique, supply voltage is reduced and as a result power consumption is decreased further. The proposed LNA exhibits the high and flat gain of 14.7–15.4 dB, input return loss of less than −11 dB and noise figure range of 2.3–4.4 dB from 1 GHz up to 8 GHz. It consumes 5.4 mW from a 1.2 V power supply. The achieved IIP3 range for the proposed LNA is 0 dBm up to +2.7 dBm. The proposed LNA occupies 0.45 mm2 in 0.18-μm CMOS technology. | ||
| 520 | |a In this paper, a Low Noise Amplifier (LNA) with the current reused topology is proposed for wideband applications. To increase input impedance matching common source with inductive degeneration and RC shunt feedback structure is used. To extend the bandwidth, inductive series peaking technique is utilized. In the next stage, two parallel structure is hired to have a high voltage gain with low power consumption in addition to improve linearity. Also, by using the self-forward-body-bias (SFBB) technique, supply voltage is reduced and as a result power consumption is decreased further. The proposed LNA exhibits the high and flat gain of 14.7–15.4 dB, input return loss of less than −11 dB and noise figure range of 2.3–4.4 dB from 1 GHz up to 8 GHz. It consumes 5.4 mW from a 1.2 V power supply. The achieved IIP3 range for the proposed LNA is 0 dBm up to +2.7 dBm. The proposed LNA occupies 0.45 mm2 in 0.18-μm CMOS technology. | ||
| 650 | 7 | |a Feedforward structure |2 Elsevier | |
| 650 | 7 | |a Current reuse technique |2 Elsevier | |
| 650 | 7 | |a Low noise amplifier |2 Elsevier | |
| 650 | 7 | |a Shunt feedback |2 Elsevier | |
| 700 | 1 | |a Hayati, Mohsen |4 oth | |
| 773 | 0 | 8 | |i Enthalten in |n Elsevier Science |a Han, Mingming ELSEVIER |t Functional evaluation of vandetanib metabolism by CYP3A4 variants and potential drug interactions |d 2021 |g Amsterdam [u.a.] |w (DE-627)ELV006836798 |
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10.1016/j.vlsi.2021.05.013 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001509.pica (DE-627)ELV055225632 (ELSEVIER)S0167-9260(21)00078-X DE-627 ger DE-627 rakwb eng 570 540 VZ BIODIV DE-30 fid PHARM DE-84 fid 35.70 bkl 44.39 bkl Kazemi, Amir Hossein verfasserin aut Design and analysis of a flat gain and linear low noise amplifier using modified current reused structure with feedforward structure 2021transfer abstract 14 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier In this paper, a Low Noise Amplifier (LNA) with the current reused topology is proposed for wideband applications. To increase input impedance matching common source with inductive degeneration and RC shunt feedback structure is used. To extend the bandwidth, inductive series peaking technique is utilized. In the next stage, two parallel structure is hired to have a high voltage gain with low power consumption in addition to improve linearity. Also, by using the self-forward-body-bias (SFBB) technique, supply voltage is reduced and as a result power consumption is decreased further. The proposed LNA exhibits the high and flat gain of 14.7–15.4 dB, input return loss of less than −11 dB and noise figure range of 2.3–4.4 dB from 1 GHz up to 8 GHz. It consumes 5.4 mW from a 1.2 V power supply. The achieved IIP3 range for the proposed LNA is 0 dBm up to +2.7 dBm. The proposed LNA occupies 0.45 mm2 in 0.18-μm CMOS technology. In this paper, a Low Noise Amplifier (LNA) with the current reused topology is proposed for wideband applications. To increase input impedance matching common source with inductive degeneration and RC shunt feedback structure is used. To extend the bandwidth, inductive series peaking technique is utilized. In the next stage, two parallel structure is hired to have a high voltage gain with low power consumption in addition to improve linearity. Also, by using the self-forward-body-bias (SFBB) technique, supply voltage is reduced and as a result power consumption is decreased further. The proposed LNA exhibits the high and flat gain of 14.7–15.4 dB, input return loss of less than −11 dB and noise figure range of 2.3–4.4 dB from 1 GHz up to 8 GHz. It consumes 5.4 mW from a 1.2 V power supply. The achieved IIP3 range for the proposed LNA is 0 dBm up to +2.7 dBm. The proposed LNA occupies 0.45 mm2 in 0.18-μm CMOS technology. Feedforward structure Elsevier Current reuse technique Elsevier Low noise amplifier Elsevier Shunt feedback Elsevier Hayati, Mohsen oth Enthalten in Elsevier Science Han, Mingming ELSEVIER Functional evaluation of vandetanib metabolism by CYP3A4 variants and potential drug interactions 2021 Amsterdam [u.a.] (DE-627)ELV006836798 volume:81 year:2021 pages:123-136 extent:14 https://doi.org/10.1016/j.vlsi.2021.05.013 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U FID-BIODIV FID-PHARM SSG-OLC-PHA SSG-OPC-PHA 35.70 Biochemie: Allgemeines VZ 44.39 Toxikologie VZ AR 81 2021 123-136 14 |
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10.1016/j.vlsi.2021.05.013 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001509.pica (DE-627)ELV055225632 (ELSEVIER)S0167-9260(21)00078-X DE-627 ger DE-627 rakwb eng 570 540 VZ BIODIV DE-30 fid PHARM DE-84 fid 35.70 bkl 44.39 bkl Kazemi, Amir Hossein verfasserin aut Design and analysis of a flat gain and linear low noise amplifier using modified current reused structure with feedforward structure 2021transfer abstract 14 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier In this paper, a Low Noise Amplifier (LNA) with the current reused topology is proposed for wideband applications. To increase input impedance matching common source with inductive degeneration and RC shunt feedback structure is used. To extend the bandwidth, inductive series peaking technique is utilized. In the next stage, two parallel structure is hired to have a high voltage gain with low power consumption in addition to improve linearity. Also, by using the self-forward-body-bias (SFBB) technique, supply voltage is reduced and as a result power consumption is decreased further. The proposed LNA exhibits the high and flat gain of 14.7–15.4 dB, input return loss of less than −11 dB and noise figure range of 2.3–4.4 dB from 1 GHz up to 8 GHz. It consumes 5.4 mW from a 1.2 V power supply. The achieved IIP3 range for the proposed LNA is 0 dBm up to +2.7 dBm. The proposed LNA occupies 0.45 mm2 in 0.18-μm CMOS technology. In this paper, a Low Noise Amplifier (LNA) with the current reused topology is proposed for wideband applications. To increase input impedance matching common source with inductive degeneration and RC shunt feedback structure is used. To extend the bandwidth, inductive series peaking technique is utilized. In the next stage, two parallel structure is hired to have a high voltage gain with low power consumption in addition to improve linearity. Also, by using the self-forward-body-bias (SFBB) technique, supply voltage is reduced and as a result power consumption is decreased further. The proposed LNA exhibits the high and flat gain of 14.7–15.4 dB, input return loss of less than −11 dB and noise figure range of 2.3–4.4 dB from 1 GHz up to 8 GHz. It consumes 5.4 mW from a 1.2 V power supply. The achieved IIP3 range for the proposed LNA is 0 dBm up to +2.7 dBm. The proposed LNA occupies 0.45 mm2 in 0.18-μm CMOS technology. Feedforward structure Elsevier Current reuse technique Elsevier Low noise amplifier Elsevier Shunt feedback Elsevier Hayati, Mohsen oth Enthalten in Elsevier Science Han, Mingming ELSEVIER Functional evaluation of vandetanib metabolism by CYP3A4 variants and potential drug interactions 2021 Amsterdam [u.a.] (DE-627)ELV006836798 volume:81 year:2021 pages:123-136 extent:14 https://doi.org/10.1016/j.vlsi.2021.05.013 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U FID-BIODIV FID-PHARM SSG-OLC-PHA SSG-OPC-PHA 35.70 Biochemie: Allgemeines VZ 44.39 Toxikologie VZ AR 81 2021 123-136 14 |
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10.1016/j.vlsi.2021.05.013 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001509.pica (DE-627)ELV055225632 (ELSEVIER)S0167-9260(21)00078-X DE-627 ger DE-627 rakwb eng 570 540 VZ BIODIV DE-30 fid PHARM DE-84 fid 35.70 bkl 44.39 bkl Kazemi, Amir Hossein verfasserin aut Design and analysis of a flat gain and linear low noise amplifier using modified current reused structure with feedforward structure 2021transfer abstract 14 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier In this paper, a Low Noise Amplifier (LNA) with the current reused topology is proposed for wideband applications. To increase input impedance matching common source with inductive degeneration and RC shunt feedback structure is used. To extend the bandwidth, inductive series peaking technique is utilized. In the next stage, two parallel structure is hired to have a high voltage gain with low power consumption in addition to improve linearity. Also, by using the self-forward-body-bias (SFBB) technique, supply voltage is reduced and as a result power consumption is decreased further. The proposed LNA exhibits the high and flat gain of 14.7–15.4 dB, input return loss of less than −11 dB and noise figure range of 2.3–4.4 dB from 1 GHz up to 8 GHz. It consumes 5.4 mW from a 1.2 V power supply. The achieved IIP3 range for the proposed LNA is 0 dBm up to +2.7 dBm. The proposed LNA occupies 0.45 mm2 in 0.18-μm CMOS technology. In this paper, a Low Noise Amplifier (LNA) with the current reused topology is proposed for wideband applications. To increase input impedance matching common source with inductive degeneration and RC shunt feedback structure is used. To extend the bandwidth, inductive series peaking technique is utilized. In the next stage, two parallel structure is hired to have a high voltage gain with low power consumption in addition to improve linearity. Also, by using the self-forward-body-bias (SFBB) technique, supply voltage is reduced and as a result power consumption is decreased further. The proposed LNA exhibits the high and flat gain of 14.7–15.4 dB, input return loss of less than −11 dB and noise figure range of 2.3–4.4 dB from 1 GHz up to 8 GHz. It consumes 5.4 mW from a 1.2 V power supply. The achieved IIP3 range for the proposed LNA is 0 dBm up to +2.7 dBm. The proposed LNA occupies 0.45 mm2 in 0.18-μm CMOS technology. Feedforward structure Elsevier Current reuse technique Elsevier Low noise amplifier Elsevier Shunt feedback Elsevier Hayati, Mohsen oth Enthalten in Elsevier Science Han, Mingming ELSEVIER Functional evaluation of vandetanib metabolism by CYP3A4 variants and potential drug interactions 2021 Amsterdam [u.a.] (DE-627)ELV006836798 volume:81 year:2021 pages:123-136 extent:14 https://doi.org/10.1016/j.vlsi.2021.05.013 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U FID-BIODIV FID-PHARM SSG-OLC-PHA SSG-OPC-PHA 35.70 Biochemie: Allgemeines VZ 44.39 Toxikologie VZ AR 81 2021 123-136 14 |
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10.1016/j.vlsi.2021.05.013 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001509.pica (DE-627)ELV055225632 (ELSEVIER)S0167-9260(21)00078-X DE-627 ger DE-627 rakwb eng 570 540 VZ BIODIV DE-30 fid PHARM DE-84 fid 35.70 bkl 44.39 bkl Kazemi, Amir Hossein verfasserin aut Design and analysis of a flat gain and linear low noise amplifier using modified current reused structure with feedforward structure 2021transfer abstract 14 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier In this paper, a Low Noise Amplifier (LNA) with the current reused topology is proposed for wideband applications. To increase input impedance matching common source with inductive degeneration and RC shunt feedback structure is used. To extend the bandwidth, inductive series peaking technique is utilized. In the next stage, two parallel structure is hired to have a high voltage gain with low power consumption in addition to improve linearity. Also, by using the self-forward-body-bias (SFBB) technique, supply voltage is reduced and as a result power consumption is decreased further. The proposed LNA exhibits the high and flat gain of 14.7–15.4 dB, input return loss of less than −11 dB and noise figure range of 2.3–4.4 dB from 1 GHz up to 8 GHz. It consumes 5.4 mW from a 1.2 V power supply. The achieved IIP3 range for the proposed LNA is 0 dBm up to +2.7 dBm. The proposed LNA occupies 0.45 mm2 in 0.18-μm CMOS technology. In this paper, a Low Noise Amplifier (LNA) with the current reused topology is proposed for wideband applications. To increase input impedance matching common source with inductive degeneration and RC shunt feedback structure is used. To extend the bandwidth, inductive series peaking technique is utilized. In the next stage, two parallel structure is hired to have a high voltage gain with low power consumption in addition to improve linearity. Also, by using the self-forward-body-bias (SFBB) technique, supply voltage is reduced and as a result power consumption is decreased further. The proposed LNA exhibits the high and flat gain of 14.7–15.4 dB, input return loss of less than −11 dB and noise figure range of 2.3–4.4 dB from 1 GHz up to 8 GHz. It consumes 5.4 mW from a 1.2 V power supply. The achieved IIP3 range for the proposed LNA is 0 dBm up to +2.7 dBm. The proposed LNA occupies 0.45 mm2 in 0.18-μm CMOS technology. Feedforward structure Elsevier Current reuse technique Elsevier Low noise amplifier Elsevier Shunt feedback Elsevier Hayati, Mohsen oth Enthalten in Elsevier Science Han, Mingming ELSEVIER Functional evaluation of vandetanib metabolism by CYP3A4 variants and potential drug interactions 2021 Amsterdam [u.a.] (DE-627)ELV006836798 volume:81 year:2021 pages:123-136 extent:14 https://doi.org/10.1016/j.vlsi.2021.05.013 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U FID-BIODIV FID-PHARM SSG-OLC-PHA SSG-OPC-PHA 35.70 Biochemie: Allgemeines VZ 44.39 Toxikologie VZ AR 81 2021 123-136 14 |
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10.1016/j.vlsi.2021.05.013 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001509.pica (DE-627)ELV055225632 (ELSEVIER)S0167-9260(21)00078-X DE-627 ger DE-627 rakwb eng 570 540 VZ BIODIV DE-30 fid PHARM DE-84 fid 35.70 bkl 44.39 bkl Kazemi, Amir Hossein verfasserin aut Design and analysis of a flat gain and linear low noise amplifier using modified current reused structure with feedforward structure 2021transfer abstract 14 nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier In this paper, a Low Noise Amplifier (LNA) with the current reused topology is proposed for wideband applications. To increase input impedance matching common source with inductive degeneration and RC shunt feedback structure is used. To extend the bandwidth, inductive series peaking technique is utilized. In the next stage, two parallel structure is hired to have a high voltage gain with low power consumption in addition to improve linearity. Also, by using the self-forward-body-bias (SFBB) technique, supply voltage is reduced and as a result power consumption is decreased further. The proposed LNA exhibits the high and flat gain of 14.7–15.4 dB, input return loss of less than −11 dB and noise figure range of 2.3–4.4 dB from 1 GHz up to 8 GHz. It consumes 5.4 mW from a 1.2 V power supply. The achieved IIP3 range for the proposed LNA is 0 dBm up to +2.7 dBm. The proposed LNA occupies 0.45 mm2 in 0.18-μm CMOS technology. In this paper, a Low Noise Amplifier (LNA) with the current reused topology is proposed for wideband applications. To increase input impedance matching common source with inductive degeneration and RC shunt feedback structure is used. To extend the bandwidth, inductive series peaking technique is utilized. In the next stage, two parallel structure is hired to have a high voltage gain with low power consumption in addition to improve linearity. Also, by using the self-forward-body-bias (SFBB) technique, supply voltage is reduced and as a result power consumption is decreased further. The proposed LNA exhibits the high and flat gain of 14.7–15.4 dB, input return loss of less than −11 dB and noise figure range of 2.3–4.4 dB from 1 GHz up to 8 GHz. It consumes 5.4 mW from a 1.2 V power supply. The achieved IIP3 range for the proposed LNA is 0 dBm up to +2.7 dBm. The proposed LNA occupies 0.45 mm2 in 0.18-μm CMOS technology. Feedforward structure Elsevier Current reuse technique Elsevier Low noise amplifier Elsevier Shunt feedback Elsevier Hayati, Mohsen oth Enthalten in Elsevier Science Han, Mingming ELSEVIER Functional evaluation of vandetanib metabolism by CYP3A4 variants and potential drug interactions 2021 Amsterdam [u.a.] (DE-627)ELV006836798 volume:81 year:2021 pages:123-136 extent:14 https://doi.org/10.1016/j.vlsi.2021.05.013 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U FID-BIODIV FID-PHARM SSG-OLC-PHA SSG-OPC-PHA 35.70 Biochemie: Allgemeines VZ 44.39 Toxikologie VZ AR 81 2021 123-136 14 |
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To increase input impedance matching common source with inductive degeneration and RC shunt feedback structure is used. To extend the bandwidth, inductive series peaking technique is utilized. In the next stage, two parallel structure is hired to have a high voltage gain with low power consumption in addition to improve linearity. Also, by using the self-forward-body-bias (SFBB) technique, supply voltage is reduced and as a result power consumption is decreased further. The proposed LNA exhibits the high and flat gain of 14.7–15.4 dB, input return loss of less than −11 dB and noise figure range of 2.3–4.4 dB from 1 GHz up to 8 GHz. It consumes 5.4 mW from a 1.2 V power supply. The achieved IIP3 range for the proposed LNA is 0 dBm up to +2.7 dBm. 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design and analysis of a flat gain and linear low noise amplifier using modified current reused structure with feedforward structure |
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Design and analysis of a flat gain and linear low noise amplifier using modified current reused structure with feedforward structure |
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In this paper, a Low Noise Amplifier (LNA) with the current reused topology is proposed for wideband applications. To increase input impedance matching common source with inductive degeneration and RC shunt feedback structure is used. To extend the bandwidth, inductive series peaking technique is utilized. In the next stage, two parallel structure is hired to have a high voltage gain with low power consumption in addition to improve linearity. Also, by using the self-forward-body-bias (SFBB) technique, supply voltage is reduced and as a result power consumption is decreased further. The proposed LNA exhibits the high and flat gain of 14.7–15.4 dB, input return loss of less than −11 dB and noise figure range of 2.3–4.4 dB from 1 GHz up to 8 GHz. It consumes 5.4 mW from a 1.2 V power supply. The achieved IIP3 range for the proposed LNA is 0 dBm up to +2.7 dBm. The proposed LNA occupies 0.45 mm2 in 0.18-μm CMOS technology. |
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In this paper, a Low Noise Amplifier (LNA) with the current reused topology is proposed for wideband applications. To increase input impedance matching common source with inductive degeneration and RC shunt feedback structure is used. To extend the bandwidth, inductive series peaking technique is utilized. In the next stage, two parallel structure is hired to have a high voltage gain with low power consumption in addition to improve linearity. Also, by using the self-forward-body-bias (SFBB) technique, supply voltage is reduced and as a result power consumption is decreased further. The proposed LNA exhibits the high and flat gain of 14.7–15.4 dB, input return loss of less than −11 dB and noise figure range of 2.3–4.4 dB from 1 GHz up to 8 GHz. It consumes 5.4 mW from a 1.2 V power supply. The achieved IIP3 range for the proposed LNA is 0 dBm up to +2.7 dBm. The proposed LNA occupies 0.45 mm2 in 0.18-μm CMOS technology. |
| abstract_unstemmed |
In this paper, a Low Noise Amplifier (LNA) with the current reused topology is proposed for wideband applications. To increase input impedance matching common source with inductive degeneration and RC shunt feedback structure is used. To extend the bandwidth, inductive series peaking technique is utilized. In the next stage, two parallel structure is hired to have a high voltage gain with low power consumption in addition to improve linearity. Also, by using the self-forward-body-bias (SFBB) technique, supply voltage is reduced and as a result power consumption is decreased further. The proposed LNA exhibits the high and flat gain of 14.7–15.4 dB, input return loss of less than −11 dB and noise figure range of 2.3–4.4 dB from 1 GHz up to 8 GHz. It consumes 5.4 mW from a 1.2 V power supply. The achieved IIP3 range for the proposed LNA is 0 dBm up to +2.7 dBm. The proposed LNA occupies 0.45 mm2 in 0.18-μm CMOS technology. |
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Design and analysis of a flat gain and linear low noise amplifier using modified current reused structure with feedforward structure |
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