Spatially selective, solid state etching of diamond using lithographically patterned FeCoB
Nanocrystalline layers of FeCoB (Fe:Co:B = 60:20:20 at atom ratio) enable spatially selective, microstructurally agnostic removal of diamond through a solid-state diffusion reaction. Lithographically fabricated 100-300 nm thick films of FeCoB are deposited on polycrystalline diamond substrates. Heat...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Wang, Zhijie [verfasserIn] |
|---|
| Format: |
E-Artikel |
|---|---|
| Sprache: |
Englisch |
| Erschienen: |
2022transfer abstract |
|---|
| Übergeordnetes Werk: |
Enthalten in: Sodium atom beam collisions with the liquid glycerol surface: Mass effects of deuteration - Wiens, Justin P. ELSEVIER, 2019, advancing the science and technology of diamond, diamond-like carbon, silicon carbides and Group 3 nitride materials, Amsterdam [u.a.] |
|---|---|
| Übergeordnetes Werk: |
volume:121 ; year:2022 ; pages:0 |
| Links: |
|---|
| DOI / URN: |
10.1016/j.diamond.2021.108763 |
|---|
| Katalog-ID: |
ELV056492820 |
|---|
| LEADER | 01000caa a22002652 4500 | ||
|---|---|---|---|
| 001 | ELV056492820 | ||
| 003 | DE-627 | ||
| 005 | 20230626043425.0 | ||
| 007 | cr uuu---uuuuu | ||
| 008 | 220205s2022 xx |||||o 00| ||eng c | ||
| 024 | 7 | |a 10.1016/j.diamond.2021.108763 |2 doi | |
| 028 | 5 | 2 | |a /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001644.pica |
| 035 | |a (DE-627)ELV056492820 | ||
| 035 | |a (ELSEVIER)S0925-9635(21)00526-4 | ||
| 040 | |a DE-627 |b ger |c DE-627 |e rakwb | ||
| 041 | |a eng | ||
| 082 | 0 | 4 | |a 540 |q VZ |
| 084 | |a 35.10 |2 bkl | ||
| 100 | 1 | |a Wang, Zhijie |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Spatially selective, solid state etching of diamond using lithographically patterned FeCoB |
| 264 | 1 | |c 2022transfer abstract | |
| 336 | |a nicht spezifiziert |b zzz |2 rdacontent | ||
| 337 | |a nicht spezifiziert |b z |2 rdamedia | ||
| 338 | |a nicht spezifiziert |b zu |2 rdacarrier | ||
| 520 | |a Nanocrystalline layers of FeCoB (Fe:Co:B = 60:20:20 at atom ratio) enable spatially selective, microstructurally agnostic removal of diamond through a solid-state diffusion reaction. Lithographically fabricated 100-300 nm thick films of FeCoB are deposited on polycrystalline diamond substrates. Heat treatment at temperatures ranging from 700 °C–900 °C for 30 min–90 min are used to trigger the conversion of sp3 to sp2 carbon at the diamond-transition metal interface. The integrity of the solid-state etchant within the thermal processing window underpins the spatial selectivity with which the diamond is removed. Removal of the reaction products using solvothermal etching in an acid solution enables the recovery of the structured diamond surfaces. FeCoB offers material removal rates, which exceeds that possible with just Fe or Co – pointing to the key role of B. The interaction zone was excised using focused ion beam milling and characterized using electron microscopy. In addition, XRD and Raman spectroscopy were performed to study the phase composition of the interaction zone. The role of the transition metal-diamond interface is key to controlling the material removal; the stability of the interface determines the ability to faithfully replicate the ultrafine features that were lithographically patterned in the FeCoB. | ||
| 520 | |a Nanocrystalline layers of FeCoB (Fe:Co:B = 60:20:20 at atom ratio) enable spatially selective, microstructurally agnostic removal of diamond through a solid-state diffusion reaction. Lithographically fabricated 100-300 nm thick films of FeCoB are deposited on polycrystalline diamond substrates. Heat treatment at temperatures ranging from 700 °C–900 °C for 30 min–90 min are used to trigger the conversion of sp3 to sp2 carbon at the diamond-transition metal interface. The integrity of the solid-state etchant within the thermal processing window underpins the spatial selectivity with which the diamond is removed. Removal of the reaction products using solvothermal etching in an acid solution enables the recovery of the structured diamond surfaces. FeCoB offers material removal rates, which exceeds that possible with just Fe or Co – pointing to the key role of B. The interaction zone was excised using focused ion beam milling and characterized using electron microscopy. In addition, XRD and Raman spectroscopy were performed to study the phase composition of the interaction zone. The role of the transition metal-diamond interface is key to controlling the material removal; the stability of the interface determines the ability to faithfully replicate the ultrafine features that were lithographically patterned in the FeCoB. | ||
| 700 | 1 | |a Shankar, M. Ravi |4 oth | |
| 773 | 0 | 8 | |i Enthalten in |n Elsevier Science |a Wiens, Justin P. ELSEVIER |t Sodium atom beam collisions with the liquid glycerol surface: Mass effects of deuteration |d 2019 |d advancing the science and technology of diamond, diamond-like carbon, silicon carbides and Group 3 nitride materials |g Amsterdam [u.a.] |w (DE-627)ELV002660938 |
| 773 | 1 | 8 | |g volume:121 |g year:2022 |g pages:0 |
| 856 | 4 | 0 | |u https://doi.org/10.1016/j.diamond.2021.108763 |3 Volltext |
| 912 | |a GBV_USEFLAG_U | ||
| 912 | |a GBV_ELV | ||
| 912 | |a SYSFLAG_U | ||
| 912 | |a SSG-OLC-PHA | ||
| 936 | b | k | |a 35.10 |j Physikalische Chemie: Allgemeines |q VZ |
| 951 | |a AR | ||
| 952 | |d 121 |j 2022 |h 0 | ||
| author_variant |
z w zw |
|---|---|
| matchkey_str |
wangzhijieshankarmravi:2022----:ptalslcieoisaethnodaodsnltor |
| hierarchy_sort_str |
2022transfer abstract |
| bklnumber |
35.10 |
| publishDate |
2022 |
| allfields |
10.1016/j.diamond.2021.108763 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001644.pica (DE-627)ELV056492820 (ELSEVIER)S0925-9635(21)00526-4 DE-627 ger DE-627 rakwb eng 540 VZ 35.10 bkl Wang, Zhijie verfasserin aut Spatially selective, solid state etching of diamond using lithographically patterned FeCoB 2022transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Nanocrystalline layers of FeCoB (Fe:Co:B = 60:20:20 at atom ratio) enable spatially selective, microstructurally agnostic removal of diamond through a solid-state diffusion reaction. Lithographically fabricated 100-300 nm thick films of FeCoB are deposited on polycrystalline diamond substrates. Heat treatment at temperatures ranging from 700 °C–900 °C for 30 min–90 min are used to trigger the conversion of sp3 to sp2 carbon at the diamond-transition metal interface. The integrity of the solid-state etchant within the thermal processing window underpins the spatial selectivity with which the diamond is removed. Removal of the reaction products using solvothermal etching in an acid solution enables the recovery of the structured diamond surfaces. FeCoB offers material removal rates, which exceeds that possible with just Fe or Co – pointing to the key role of B. The interaction zone was excised using focused ion beam milling and characterized using electron microscopy. In addition, XRD and Raman spectroscopy were performed to study the phase composition of the interaction zone. The role of the transition metal-diamond interface is key to controlling the material removal; the stability of the interface determines the ability to faithfully replicate the ultrafine features that were lithographically patterned in the FeCoB. Nanocrystalline layers of FeCoB (Fe:Co:B = 60:20:20 at atom ratio) enable spatially selective, microstructurally agnostic removal of diamond through a solid-state diffusion reaction. Lithographically fabricated 100-300 nm thick films of FeCoB are deposited on polycrystalline diamond substrates. Heat treatment at temperatures ranging from 700 °C–900 °C for 30 min–90 min are used to trigger the conversion of sp3 to sp2 carbon at the diamond-transition metal interface. The integrity of the solid-state etchant within the thermal processing window underpins the spatial selectivity with which the diamond is removed. Removal of the reaction products using solvothermal etching in an acid solution enables the recovery of the structured diamond surfaces. FeCoB offers material removal rates, which exceeds that possible with just Fe or Co – pointing to the key role of B. The interaction zone was excised using focused ion beam milling and characterized using electron microscopy. In addition, XRD and Raman spectroscopy were performed to study the phase composition of the interaction zone. The role of the transition metal-diamond interface is key to controlling the material removal; the stability of the interface determines the ability to faithfully replicate the ultrafine features that were lithographically patterned in the FeCoB. Shankar, M. Ravi oth Enthalten in Elsevier Science Wiens, Justin P. ELSEVIER Sodium atom beam collisions with the liquid glycerol surface: Mass effects of deuteration 2019 advancing the science and technology of diamond, diamond-like carbon, silicon carbides and Group 3 nitride materials Amsterdam [u.a.] (DE-627)ELV002660938 volume:121 year:2022 pages:0 https://doi.org/10.1016/j.diamond.2021.108763 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 35.10 Physikalische Chemie: Allgemeines VZ AR 121 2022 0 |
| spelling |
10.1016/j.diamond.2021.108763 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001644.pica (DE-627)ELV056492820 (ELSEVIER)S0925-9635(21)00526-4 DE-627 ger DE-627 rakwb eng 540 VZ 35.10 bkl Wang, Zhijie verfasserin aut Spatially selective, solid state etching of diamond using lithographically patterned FeCoB 2022transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Nanocrystalline layers of FeCoB (Fe:Co:B = 60:20:20 at atom ratio) enable spatially selective, microstructurally agnostic removal of diamond through a solid-state diffusion reaction. Lithographically fabricated 100-300 nm thick films of FeCoB are deposited on polycrystalline diamond substrates. Heat treatment at temperatures ranging from 700 °C–900 °C for 30 min–90 min are used to trigger the conversion of sp3 to sp2 carbon at the diamond-transition metal interface. The integrity of the solid-state etchant within the thermal processing window underpins the spatial selectivity with which the diamond is removed. Removal of the reaction products using solvothermal etching in an acid solution enables the recovery of the structured diamond surfaces. FeCoB offers material removal rates, which exceeds that possible with just Fe or Co – pointing to the key role of B. The interaction zone was excised using focused ion beam milling and characterized using electron microscopy. In addition, XRD and Raman spectroscopy were performed to study the phase composition of the interaction zone. The role of the transition metal-diamond interface is key to controlling the material removal; the stability of the interface determines the ability to faithfully replicate the ultrafine features that were lithographically patterned in the FeCoB. Nanocrystalline layers of FeCoB (Fe:Co:B = 60:20:20 at atom ratio) enable spatially selective, microstructurally agnostic removal of diamond through a solid-state diffusion reaction. Lithographically fabricated 100-300 nm thick films of FeCoB are deposited on polycrystalline diamond substrates. Heat treatment at temperatures ranging from 700 °C–900 °C for 30 min–90 min are used to trigger the conversion of sp3 to sp2 carbon at the diamond-transition metal interface. The integrity of the solid-state etchant within the thermal processing window underpins the spatial selectivity with which the diamond is removed. Removal of the reaction products using solvothermal etching in an acid solution enables the recovery of the structured diamond surfaces. FeCoB offers material removal rates, which exceeds that possible with just Fe or Co – pointing to the key role of B. The interaction zone was excised using focused ion beam milling and characterized using electron microscopy. In addition, XRD and Raman spectroscopy were performed to study the phase composition of the interaction zone. The role of the transition metal-diamond interface is key to controlling the material removal; the stability of the interface determines the ability to faithfully replicate the ultrafine features that were lithographically patterned in the FeCoB. Shankar, M. Ravi oth Enthalten in Elsevier Science Wiens, Justin P. ELSEVIER Sodium atom beam collisions with the liquid glycerol surface: Mass effects of deuteration 2019 advancing the science and technology of diamond, diamond-like carbon, silicon carbides and Group 3 nitride materials Amsterdam [u.a.] (DE-627)ELV002660938 volume:121 year:2022 pages:0 https://doi.org/10.1016/j.diamond.2021.108763 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 35.10 Physikalische Chemie: Allgemeines VZ AR 121 2022 0 |
| allfields_unstemmed |
10.1016/j.diamond.2021.108763 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001644.pica (DE-627)ELV056492820 (ELSEVIER)S0925-9635(21)00526-4 DE-627 ger DE-627 rakwb eng 540 VZ 35.10 bkl Wang, Zhijie verfasserin aut Spatially selective, solid state etching of diamond using lithographically patterned FeCoB 2022transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Nanocrystalline layers of FeCoB (Fe:Co:B = 60:20:20 at atom ratio) enable spatially selective, microstructurally agnostic removal of diamond through a solid-state diffusion reaction. Lithographically fabricated 100-300 nm thick films of FeCoB are deposited on polycrystalline diamond substrates. Heat treatment at temperatures ranging from 700 °C–900 °C for 30 min–90 min are used to trigger the conversion of sp3 to sp2 carbon at the diamond-transition metal interface. The integrity of the solid-state etchant within the thermal processing window underpins the spatial selectivity with which the diamond is removed. Removal of the reaction products using solvothermal etching in an acid solution enables the recovery of the structured diamond surfaces. FeCoB offers material removal rates, which exceeds that possible with just Fe or Co – pointing to the key role of B. The interaction zone was excised using focused ion beam milling and characterized using electron microscopy. In addition, XRD and Raman spectroscopy were performed to study the phase composition of the interaction zone. The role of the transition metal-diamond interface is key to controlling the material removal; the stability of the interface determines the ability to faithfully replicate the ultrafine features that were lithographically patterned in the FeCoB. Nanocrystalline layers of FeCoB (Fe:Co:B = 60:20:20 at atom ratio) enable spatially selective, microstructurally agnostic removal of diamond through a solid-state diffusion reaction. Lithographically fabricated 100-300 nm thick films of FeCoB are deposited on polycrystalline diamond substrates. Heat treatment at temperatures ranging from 700 °C–900 °C for 30 min–90 min are used to trigger the conversion of sp3 to sp2 carbon at the diamond-transition metal interface. The integrity of the solid-state etchant within the thermal processing window underpins the spatial selectivity with which the diamond is removed. Removal of the reaction products using solvothermal etching in an acid solution enables the recovery of the structured diamond surfaces. FeCoB offers material removal rates, which exceeds that possible with just Fe or Co – pointing to the key role of B. The interaction zone was excised using focused ion beam milling and characterized using electron microscopy. In addition, XRD and Raman spectroscopy were performed to study the phase composition of the interaction zone. The role of the transition metal-diamond interface is key to controlling the material removal; the stability of the interface determines the ability to faithfully replicate the ultrafine features that were lithographically patterned in the FeCoB. Shankar, M. Ravi oth Enthalten in Elsevier Science Wiens, Justin P. ELSEVIER Sodium atom beam collisions with the liquid glycerol surface: Mass effects of deuteration 2019 advancing the science and technology of diamond, diamond-like carbon, silicon carbides and Group 3 nitride materials Amsterdam [u.a.] (DE-627)ELV002660938 volume:121 year:2022 pages:0 https://doi.org/10.1016/j.diamond.2021.108763 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 35.10 Physikalische Chemie: Allgemeines VZ AR 121 2022 0 |
| allfieldsGer |
10.1016/j.diamond.2021.108763 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001644.pica (DE-627)ELV056492820 (ELSEVIER)S0925-9635(21)00526-4 DE-627 ger DE-627 rakwb eng 540 VZ 35.10 bkl Wang, Zhijie verfasserin aut Spatially selective, solid state etching of diamond using lithographically patterned FeCoB 2022transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Nanocrystalline layers of FeCoB (Fe:Co:B = 60:20:20 at atom ratio) enable spatially selective, microstructurally agnostic removal of diamond through a solid-state diffusion reaction. Lithographically fabricated 100-300 nm thick films of FeCoB are deposited on polycrystalline diamond substrates. Heat treatment at temperatures ranging from 700 °C–900 °C for 30 min–90 min are used to trigger the conversion of sp3 to sp2 carbon at the diamond-transition metal interface. The integrity of the solid-state etchant within the thermal processing window underpins the spatial selectivity with which the diamond is removed. Removal of the reaction products using solvothermal etching in an acid solution enables the recovery of the structured diamond surfaces. FeCoB offers material removal rates, which exceeds that possible with just Fe or Co – pointing to the key role of B. The interaction zone was excised using focused ion beam milling and characterized using electron microscopy. In addition, XRD and Raman spectroscopy were performed to study the phase composition of the interaction zone. The role of the transition metal-diamond interface is key to controlling the material removal; the stability of the interface determines the ability to faithfully replicate the ultrafine features that were lithographically patterned in the FeCoB. Nanocrystalline layers of FeCoB (Fe:Co:B = 60:20:20 at atom ratio) enable spatially selective, microstructurally agnostic removal of diamond through a solid-state diffusion reaction. Lithographically fabricated 100-300 nm thick films of FeCoB are deposited on polycrystalline diamond substrates. Heat treatment at temperatures ranging from 700 °C–900 °C for 30 min–90 min are used to trigger the conversion of sp3 to sp2 carbon at the diamond-transition metal interface. The integrity of the solid-state etchant within the thermal processing window underpins the spatial selectivity with which the diamond is removed. Removal of the reaction products using solvothermal etching in an acid solution enables the recovery of the structured diamond surfaces. FeCoB offers material removal rates, which exceeds that possible with just Fe or Co – pointing to the key role of B. The interaction zone was excised using focused ion beam milling and characterized using electron microscopy. In addition, XRD and Raman spectroscopy were performed to study the phase composition of the interaction zone. The role of the transition metal-diamond interface is key to controlling the material removal; the stability of the interface determines the ability to faithfully replicate the ultrafine features that were lithographically patterned in the FeCoB. Shankar, M. Ravi oth Enthalten in Elsevier Science Wiens, Justin P. ELSEVIER Sodium atom beam collisions with the liquid glycerol surface: Mass effects of deuteration 2019 advancing the science and technology of diamond, diamond-like carbon, silicon carbides and Group 3 nitride materials Amsterdam [u.a.] (DE-627)ELV002660938 volume:121 year:2022 pages:0 https://doi.org/10.1016/j.diamond.2021.108763 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 35.10 Physikalische Chemie: Allgemeines VZ AR 121 2022 0 |
| allfieldsSound |
10.1016/j.diamond.2021.108763 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001644.pica (DE-627)ELV056492820 (ELSEVIER)S0925-9635(21)00526-4 DE-627 ger DE-627 rakwb eng 540 VZ 35.10 bkl Wang, Zhijie verfasserin aut Spatially selective, solid state etching of diamond using lithographically patterned FeCoB 2022transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier Nanocrystalline layers of FeCoB (Fe:Co:B = 60:20:20 at atom ratio) enable spatially selective, microstructurally agnostic removal of diamond through a solid-state diffusion reaction. Lithographically fabricated 100-300 nm thick films of FeCoB are deposited on polycrystalline diamond substrates. Heat treatment at temperatures ranging from 700 °C–900 °C for 30 min–90 min are used to trigger the conversion of sp3 to sp2 carbon at the diamond-transition metal interface. The integrity of the solid-state etchant within the thermal processing window underpins the spatial selectivity with which the diamond is removed. Removal of the reaction products using solvothermal etching in an acid solution enables the recovery of the structured diamond surfaces. FeCoB offers material removal rates, which exceeds that possible with just Fe or Co – pointing to the key role of B. The interaction zone was excised using focused ion beam milling and characterized using electron microscopy. In addition, XRD and Raman spectroscopy were performed to study the phase composition of the interaction zone. The role of the transition metal-diamond interface is key to controlling the material removal; the stability of the interface determines the ability to faithfully replicate the ultrafine features that were lithographically patterned in the FeCoB. Nanocrystalline layers of FeCoB (Fe:Co:B = 60:20:20 at atom ratio) enable spatially selective, microstructurally agnostic removal of diamond through a solid-state diffusion reaction. Lithographically fabricated 100-300 nm thick films of FeCoB are deposited on polycrystalline diamond substrates. Heat treatment at temperatures ranging from 700 °C–900 °C for 30 min–90 min are used to trigger the conversion of sp3 to sp2 carbon at the diamond-transition metal interface. The integrity of the solid-state etchant within the thermal processing window underpins the spatial selectivity with which the diamond is removed. Removal of the reaction products using solvothermal etching in an acid solution enables the recovery of the structured diamond surfaces. FeCoB offers material removal rates, which exceeds that possible with just Fe or Co – pointing to the key role of B. The interaction zone was excised using focused ion beam milling and characterized using electron microscopy. In addition, XRD and Raman spectroscopy were performed to study the phase composition of the interaction zone. The role of the transition metal-diamond interface is key to controlling the material removal; the stability of the interface determines the ability to faithfully replicate the ultrafine features that were lithographically patterned in the FeCoB. Shankar, M. Ravi oth Enthalten in Elsevier Science Wiens, Justin P. ELSEVIER Sodium atom beam collisions with the liquid glycerol surface: Mass effects of deuteration 2019 advancing the science and technology of diamond, diamond-like carbon, silicon carbides and Group 3 nitride materials Amsterdam [u.a.] (DE-627)ELV002660938 volume:121 year:2022 pages:0 https://doi.org/10.1016/j.diamond.2021.108763 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA 35.10 Physikalische Chemie: Allgemeines VZ AR 121 2022 0 |
| language |
English |
| source |
Enthalten in Sodium atom beam collisions with the liquid glycerol surface: Mass effects of deuteration Amsterdam [u.a.] volume:121 year:2022 pages:0 |
| sourceStr |
Enthalten in Sodium atom beam collisions with the liquid glycerol surface: Mass effects of deuteration Amsterdam [u.a.] volume:121 year:2022 pages:0 |
| format_phy_str_mv |
Article |
| bklname |
Physikalische Chemie: Allgemeines |
| institution |
findex.gbv.de |
| dewey-raw |
540 |
| isfreeaccess_bool |
false |
| container_title |
Sodium atom beam collisions with the liquid glycerol surface: Mass effects of deuteration |
| authorswithroles_txt_mv |
Wang, Zhijie @@aut@@ Shankar, M. Ravi @@oth@@ |
| publishDateDaySort_date |
2022-01-01T00:00:00Z |
| hierarchy_top_id |
ELV002660938 |
| dewey-sort |
3540 |
| id |
ELV056492820 |
| language_de |
englisch |
| fullrecord |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV056492820</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230626043425.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">220205s2022 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.diamond.2021.108763</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">/cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001644.pica</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV056492820</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S0925-9635(21)00526-4</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">540</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">35.10</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Wang, Zhijie</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Spatially selective, solid state etching of diamond using lithographically patterned FeCoB</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2022transfer abstract</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Nanocrystalline layers of FeCoB (Fe:Co:B = 60:20:20 at atom ratio) enable spatially selective, microstructurally agnostic removal of diamond through a solid-state diffusion reaction. Lithographically fabricated 100-300 nm thick films of FeCoB are deposited on polycrystalline diamond substrates. Heat treatment at temperatures ranging from 700 °C–900 °C for 30 min–90 min are used to trigger the conversion of sp3 to sp2 carbon at the diamond-transition metal interface. The integrity of the solid-state etchant within the thermal processing window underpins the spatial selectivity with which the diamond is removed. Removal of the reaction products using solvothermal etching in an acid solution enables the recovery of the structured diamond surfaces. FeCoB offers material removal rates, which exceeds that possible with just Fe or Co – pointing to the key role of B. The interaction zone was excised using focused ion beam milling and characterized using electron microscopy. In addition, XRD and Raman spectroscopy were performed to study the phase composition of the interaction zone. The role of the transition metal-diamond interface is key to controlling the material removal; the stability of the interface determines the ability to faithfully replicate the ultrafine features that were lithographically patterned in the FeCoB.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Nanocrystalline layers of FeCoB (Fe:Co:B = 60:20:20 at atom ratio) enable spatially selective, microstructurally agnostic removal of diamond through a solid-state diffusion reaction. Lithographically fabricated 100-300 nm thick films of FeCoB are deposited on polycrystalline diamond substrates. Heat treatment at temperatures ranging from 700 °C–900 °C for 30 min–90 min are used to trigger the conversion of sp3 to sp2 carbon at the diamond-transition metal interface. The integrity of the solid-state etchant within the thermal processing window underpins the spatial selectivity with which the diamond is removed. Removal of the reaction products using solvothermal etching in an acid solution enables the recovery of the structured diamond surfaces. FeCoB offers material removal rates, which exceeds that possible with just Fe or Co – pointing to the key role of B. The interaction zone was excised using focused ion beam milling and characterized using electron microscopy. In addition, XRD and Raman spectroscopy were performed to study the phase composition of the interaction zone. The role of the transition metal-diamond interface is key to controlling the material removal; the stability of the interface determines the ability to faithfully replicate the ultrafine features that were lithographically patterned in the FeCoB.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Shankar, M. Ravi</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="n">Elsevier Science</subfield><subfield code="a">Wiens, Justin P. ELSEVIER</subfield><subfield code="t">Sodium atom beam collisions with the liquid glycerol surface: Mass effects of deuteration</subfield><subfield code="d">2019</subfield><subfield code="d">advancing the science and technology of diamond, diamond-like carbon, silicon carbides and Group 3 nitride materials</subfield><subfield code="g">Amsterdam [u.a.]</subfield><subfield code="w">(DE-627)ELV002660938</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:121</subfield><subfield code="g">year:2022</subfield><subfield code="g">pages:0</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1016/j.diamond.2021.108763</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHA</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">35.10</subfield><subfield code="j">Physikalische Chemie: Allgemeines</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">121</subfield><subfield code="j">2022</subfield><subfield code="h">0</subfield></datafield></record></collection>
|
| author |
Wang, Zhijie |
| spellingShingle |
Wang, Zhijie ddc 540 bkl 35.10 Spatially selective, solid state etching of diamond using lithographically patterned FeCoB |
| authorStr |
Wang, Zhijie |
| ppnlink_with_tag_str_mv |
@@773@@(DE-627)ELV002660938 |
| format |
electronic Article |
| dewey-ones |
540 - Chemistry & allied sciences |
| delete_txt_mv |
keep |
| author_role |
aut |
| collection |
elsevier |
| remote_str |
true |
| illustrated |
Not Illustrated |
| topic_title |
540 VZ 35.10 bkl Spatially selective, solid state etching of diamond using lithographically patterned FeCoB |
| topic |
ddc 540 bkl 35.10 |
| topic_unstemmed |
ddc 540 bkl 35.10 |
| topic_browse |
ddc 540 bkl 35.10 |
| format_facet |
Elektronische Aufsätze Aufsätze Elektronische Ressource |
| format_main_str_mv |
Text Zeitschrift/Artikel |
| carriertype_str_mv |
zu |
| author2_variant |
m r s mr mrs |
| hierarchy_parent_title |
Sodium atom beam collisions with the liquid glycerol surface: Mass effects of deuteration |
| hierarchy_parent_id |
ELV002660938 |
| dewey-tens |
540 - Chemistry |
| hierarchy_top_title |
Sodium atom beam collisions with the liquid glycerol surface: Mass effects of deuteration |
| isfreeaccess_txt |
false |
| familylinks_str_mv |
(DE-627)ELV002660938 |
| title |
Spatially selective, solid state etching of diamond using lithographically patterned FeCoB |
| ctrlnum |
(DE-627)ELV056492820 (ELSEVIER)S0925-9635(21)00526-4 |
| title_full |
Spatially selective, solid state etching of diamond using lithographically patterned FeCoB |
| author_sort |
Wang, Zhijie |
| journal |
Sodium atom beam collisions with the liquid glycerol surface: Mass effects of deuteration |
| journalStr |
Sodium atom beam collisions with the liquid glycerol surface: Mass effects of deuteration |
| lang_code |
eng |
| isOA_bool |
false |
| dewey-hundreds |
500 - Science |
| recordtype |
marc |
| publishDateSort |
2022 |
| contenttype_str_mv |
zzz |
| container_start_page |
0 |
| author_browse |
Wang, Zhijie |
| container_volume |
121 |
| class |
540 VZ 35.10 bkl |
| format_se |
Elektronische Aufsätze |
| author-letter |
Wang, Zhijie |
| doi_str_mv |
10.1016/j.diamond.2021.108763 |
| dewey-full |
540 |
| title_sort |
spatially selective, solid state etching of diamond using lithographically patterned fecob |
| title_auth |
Spatially selective, solid state etching of diamond using lithographically patterned FeCoB |
| abstract |
Nanocrystalline layers of FeCoB (Fe:Co:B = 60:20:20 at atom ratio) enable spatially selective, microstructurally agnostic removal of diamond through a solid-state diffusion reaction. Lithographically fabricated 100-300 nm thick films of FeCoB are deposited on polycrystalline diamond substrates. Heat treatment at temperatures ranging from 700 °C–900 °C for 30 min–90 min are used to trigger the conversion of sp3 to sp2 carbon at the diamond-transition metal interface. The integrity of the solid-state etchant within the thermal processing window underpins the spatial selectivity with which the diamond is removed. Removal of the reaction products using solvothermal etching in an acid solution enables the recovery of the structured diamond surfaces. FeCoB offers material removal rates, which exceeds that possible with just Fe or Co – pointing to the key role of B. The interaction zone was excised using focused ion beam milling and characterized using electron microscopy. In addition, XRD and Raman spectroscopy were performed to study the phase composition of the interaction zone. The role of the transition metal-diamond interface is key to controlling the material removal; the stability of the interface determines the ability to faithfully replicate the ultrafine features that were lithographically patterned in the FeCoB. |
| abstractGer |
Nanocrystalline layers of FeCoB (Fe:Co:B = 60:20:20 at atom ratio) enable spatially selective, microstructurally agnostic removal of diamond through a solid-state diffusion reaction. Lithographically fabricated 100-300 nm thick films of FeCoB are deposited on polycrystalline diamond substrates. Heat treatment at temperatures ranging from 700 °C–900 °C for 30 min–90 min are used to trigger the conversion of sp3 to sp2 carbon at the diamond-transition metal interface. The integrity of the solid-state etchant within the thermal processing window underpins the spatial selectivity with which the diamond is removed. Removal of the reaction products using solvothermal etching in an acid solution enables the recovery of the structured diamond surfaces. FeCoB offers material removal rates, which exceeds that possible with just Fe or Co – pointing to the key role of B. The interaction zone was excised using focused ion beam milling and characterized using electron microscopy. In addition, XRD and Raman spectroscopy were performed to study the phase composition of the interaction zone. The role of the transition metal-diamond interface is key to controlling the material removal; the stability of the interface determines the ability to faithfully replicate the ultrafine features that were lithographically patterned in the FeCoB. |
| abstract_unstemmed |
Nanocrystalline layers of FeCoB (Fe:Co:B = 60:20:20 at atom ratio) enable spatially selective, microstructurally agnostic removal of diamond through a solid-state diffusion reaction. Lithographically fabricated 100-300 nm thick films of FeCoB are deposited on polycrystalline diamond substrates. Heat treatment at temperatures ranging from 700 °C–900 °C for 30 min–90 min are used to trigger the conversion of sp3 to sp2 carbon at the diamond-transition metal interface. The integrity of the solid-state etchant within the thermal processing window underpins the spatial selectivity with which the diamond is removed. Removal of the reaction products using solvothermal etching in an acid solution enables the recovery of the structured diamond surfaces. FeCoB offers material removal rates, which exceeds that possible with just Fe or Co – pointing to the key role of B. The interaction zone was excised using focused ion beam milling and characterized using electron microscopy. In addition, XRD and Raman spectroscopy were performed to study the phase composition of the interaction zone. The role of the transition metal-diamond interface is key to controlling the material removal; the stability of the interface determines the ability to faithfully replicate the ultrafine features that were lithographically patterned in the FeCoB. |
| collection_details |
GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA |
| title_short |
Spatially selective, solid state etching of diamond using lithographically patterned FeCoB |
| url |
https://doi.org/10.1016/j.diamond.2021.108763 |
| remote_bool |
true |
| author2 |
Shankar, M. Ravi |
| author2Str |
Shankar, M. Ravi |
| ppnlink |
ELV002660938 |
| mediatype_str_mv |
z |
| isOA_txt |
false |
| hochschulschrift_bool |
false |
| author2_role |
oth |
| doi_str |
10.1016/j.diamond.2021.108763 |
| up_date |
2024-07-06T20:33:00.209Z |
| _version_ |
1803863174896680960 |
| fullrecord_marcxml |
<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">ELV056492820</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230626043425.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">220205s2022 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1016/j.diamond.2021.108763</subfield><subfield code="2">doi</subfield></datafield><datafield tag="028" ind1="5" ind2="2"><subfield code="a">/cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001644.pica</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)ELV056492820</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ELSEVIER)S0925-9635(21)00526-4</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">540</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">35.10</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Wang, Zhijie</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Spatially selective, solid state etching of diamond using lithographically patterned FeCoB</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2022transfer abstract</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zzz</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">z</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">nicht spezifiziert</subfield><subfield code="b">zu</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Nanocrystalline layers of FeCoB (Fe:Co:B = 60:20:20 at atom ratio) enable spatially selective, microstructurally agnostic removal of diamond through a solid-state diffusion reaction. Lithographically fabricated 100-300 nm thick films of FeCoB are deposited on polycrystalline diamond substrates. Heat treatment at temperatures ranging from 700 °C–900 °C for 30 min–90 min are used to trigger the conversion of sp3 to sp2 carbon at the diamond-transition metal interface. The integrity of the solid-state etchant within the thermal processing window underpins the spatial selectivity with which the diamond is removed. Removal of the reaction products using solvothermal etching in an acid solution enables the recovery of the structured diamond surfaces. FeCoB offers material removal rates, which exceeds that possible with just Fe or Co – pointing to the key role of B. The interaction zone was excised using focused ion beam milling and characterized using electron microscopy. In addition, XRD and Raman spectroscopy were performed to study the phase composition of the interaction zone. The role of the transition metal-diamond interface is key to controlling the material removal; the stability of the interface determines the ability to faithfully replicate the ultrafine features that were lithographically patterned in the FeCoB.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Nanocrystalline layers of FeCoB (Fe:Co:B = 60:20:20 at atom ratio) enable spatially selective, microstructurally agnostic removal of diamond through a solid-state diffusion reaction. Lithographically fabricated 100-300 nm thick films of FeCoB are deposited on polycrystalline diamond substrates. Heat treatment at temperatures ranging from 700 °C–900 °C for 30 min–90 min are used to trigger the conversion of sp3 to sp2 carbon at the diamond-transition metal interface. The integrity of the solid-state etchant within the thermal processing window underpins the spatial selectivity with which the diamond is removed. Removal of the reaction products using solvothermal etching in an acid solution enables the recovery of the structured diamond surfaces. FeCoB offers material removal rates, which exceeds that possible with just Fe or Co – pointing to the key role of B. The interaction zone was excised using focused ion beam milling and characterized using electron microscopy. In addition, XRD and Raman spectroscopy were performed to study the phase composition of the interaction zone. The role of the transition metal-diamond interface is key to controlling the material removal; the stability of the interface determines the ability to faithfully replicate the ultrafine features that were lithographically patterned in the FeCoB.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Shankar, M. Ravi</subfield><subfield code="4">oth</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="n">Elsevier Science</subfield><subfield code="a">Wiens, Justin P. ELSEVIER</subfield><subfield code="t">Sodium atom beam collisions with the liquid glycerol surface: Mass effects of deuteration</subfield><subfield code="d">2019</subfield><subfield code="d">advancing the science and technology of diamond, diamond-like carbon, silicon carbides and Group 3 nitride materials</subfield><subfield code="g">Amsterdam [u.a.]</subfield><subfield code="w">(DE-627)ELV002660938</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:121</subfield><subfield code="g">year:2022</subfield><subfield code="g">pages:0</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1016/j.diamond.2021.108763</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ELV</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_U</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SSG-OLC-PHA</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">35.10</subfield><subfield code="j">Physikalische Chemie: Allgemeines</subfield><subfield code="q">VZ</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">121</subfield><subfield code="j">2022</subfield><subfield code="h">0</subfield></datafield></record></collection>
|
| score |
7.3988514 |