Compatible resistive switching mechanisms in Ni/SiOx/ITO and application to neuromorphic systems
In this work, we studied the switching mechanisms of Ni/SiOx/ITO devices before and after experiencing a reversible switching. And we also investigated its application for neuromorphic computing systems. First, we checked the composition of the device and progressed the electrical measurements. The...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Park, Minsu [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2022transfer abstract |
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| Übergeordnetes Werk: |
Enthalten in: Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners - Jacobs, Jacquelyn A. ELSEVIER, 2017, JAL : an interdisciplinary journal of materials science and solid-state chemistry and physics, Lausanne |
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| Übergeordnetes Werk: |
volume:903 ; year:2022 ; day:15 ; month:05 ; pages:0 |
| Links: |
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| DOI / URN: |
10.1016/j.jallcom.2022.163870 |
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| 520 | |a In this work, we studied the switching mechanisms of Ni/SiOx/ITO devices before and after experiencing a reversible switching. And we also investigated its application for neuromorphic computing systems. First, we checked the composition of the device and progressed the electrical measurements. The device had two operating properties that are affected by an external applied voltage, and thus, we divided it into two distinct I-V curves to experimentally investigate the features. Even if they originated from the same RRAM devices, they exhibited different electrical measurements such as a retention, threshold voltages, and the conductance ratio. The I-V curve with an abrupt switching showed a good retention time of 7000 s and a wide conductance ratio of about ~41. On the other hand, the other I-V curve that shows progressive operation displayed a low retention time of 5000 s and a narrow conductance ratio of about ~3.43. We discussed the different results that were identified on the same device and concluded that it was caused by a change of switching mechanisms induced by a reversible switching in negative polarity. The overshoot current and large fluctuation in threshold voltage were used as evidence for our discussions. After identifying the electrical features, we progressed the biological processes such as potentiation/depression, paired-pulse facilitation (PPF) and spike-timing-dependent plasticity (STDP) to implement the neural networks. | ||
| 520 | |a In this work, we studied the switching mechanisms of Ni/SiOx/ITO devices before and after experiencing a reversible switching. And we also investigated its application for neuromorphic computing systems. First, we checked the composition of the device and progressed the electrical measurements. The device had two operating properties that are affected by an external applied voltage, and thus, we divided it into two distinct I-V curves to experimentally investigate the features. Even if they originated from the same RRAM devices, they exhibited different electrical measurements such as a retention, threshold voltages, and the conductance ratio. The I-V curve with an abrupt switching showed a good retention time of 7000 s and a wide conductance ratio of about ~41. On the other hand, the other I-V curve that shows progressive operation displayed a low retention time of 5000 s and a narrow conductance ratio of about ~3.43. We discussed the different results that were identified on the same device and concluded that it was caused by a change of switching mechanisms induced by a reversible switching in negative polarity. The overshoot current and large fluctuation in threshold voltage were used as evidence for our discussions. After identifying the electrical features, we progressed the biological processes such as potentiation/depression, paired-pulse facilitation (PPF) and spike-timing-dependent plasticity (STDP) to implement the neural networks. | ||
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| 700 | 1 | |a Park, Jongmin |4 oth | |
| 700 | 1 | |a Kim, Sungjun |4 oth | |
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10.1016/j.jallcom.2022.163870 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001769.pica (DE-627)ELV056996233 (ELSEVIER)S0925-8388(22)00261-4 DE-627 ger DE-627 rakwb eng 630 VZ Park, Minsu verfasserin aut Compatible resistive switching mechanisms in Ni/SiOx/ITO and application to neuromorphic systems 2022transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier In this work, we studied the switching mechanisms of Ni/SiOx/ITO devices before and after experiencing a reversible switching. And we also investigated its application for neuromorphic computing systems. First, we checked the composition of the device and progressed the electrical measurements. The device had two operating properties that are affected by an external applied voltage, and thus, we divided it into two distinct I-V curves to experimentally investigate the features. Even if they originated from the same RRAM devices, they exhibited different electrical measurements such as a retention, threshold voltages, and the conductance ratio. The I-V curve with an abrupt switching showed a good retention time of 7000 s and a wide conductance ratio of about ~41. On the other hand, the other I-V curve that shows progressive operation displayed a low retention time of 5000 s and a narrow conductance ratio of about ~3.43. We discussed the different results that were identified on the same device and concluded that it was caused by a change of switching mechanisms induced by a reversible switching in negative polarity. The overshoot current and large fluctuation in threshold voltage were used as evidence for our discussions. After identifying the electrical features, we progressed the biological processes such as potentiation/depression, paired-pulse facilitation (PPF) and spike-timing-dependent plasticity (STDP) to implement the neural networks. In this work, we studied the switching mechanisms of Ni/SiOx/ITO devices before and after experiencing a reversible switching. And we also investigated its application for neuromorphic computing systems. First, we checked the composition of the device and progressed the electrical measurements. The device had two operating properties that are affected by an external applied voltage, and thus, we divided it into two distinct I-V curves to experimentally investigate the features. Even if they originated from the same RRAM devices, they exhibited different electrical measurements such as a retention, threshold voltages, and the conductance ratio. The I-V curve with an abrupt switching showed a good retention time of 7000 s and a wide conductance ratio of about ~41. On the other hand, the other I-V curve that shows progressive operation displayed a low retention time of 5000 s and a narrow conductance ratio of about ~3.43. We discussed the different results that were identified on the same device and concluded that it was caused by a change of switching mechanisms induced by a reversible switching in negative polarity. The overshoot current and large fluctuation in threshold voltage were used as evidence for our discussions. After identifying the electrical features, we progressed the biological processes such as potentiation/depression, paired-pulse facilitation (PPF) and spike-timing-dependent plasticity (STDP) to implement the neural networks. Neuromorphic system Elsevier Resistive switching Elsevier Memristor Elsevier Synaptic device Elsevier Park, Jongmin oth Kim, Sungjun oth Enthalten in Elsevier Jacobs, Jacquelyn A. ELSEVIER Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners 2017 JAL : an interdisciplinary journal of materials science and solid-state chemistry and physics Lausanne (DE-627)ELV001115774 volume:903 year:2022 day:15 month:05 pages:0 https://doi.org/10.1016/j.jallcom.2022.163870 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA AR 903 2022 15 0515 0 |
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10.1016/j.jallcom.2022.163870 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001769.pica (DE-627)ELV056996233 (ELSEVIER)S0925-8388(22)00261-4 DE-627 ger DE-627 rakwb eng 630 VZ Park, Minsu verfasserin aut Compatible resistive switching mechanisms in Ni/SiOx/ITO and application to neuromorphic systems 2022transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier In this work, we studied the switching mechanisms of Ni/SiOx/ITO devices before and after experiencing a reversible switching. And we also investigated its application for neuromorphic computing systems. First, we checked the composition of the device and progressed the electrical measurements. The device had two operating properties that are affected by an external applied voltage, and thus, we divided it into two distinct I-V curves to experimentally investigate the features. Even if they originated from the same RRAM devices, they exhibited different electrical measurements such as a retention, threshold voltages, and the conductance ratio. The I-V curve with an abrupt switching showed a good retention time of 7000 s and a wide conductance ratio of about ~41. On the other hand, the other I-V curve that shows progressive operation displayed a low retention time of 5000 s and a narrow conductance ratio of about ~3.43. We discussed the different results that were identified on the same device and concluded that it was caused by a change of switching mechanisms induced by a reversible switching in negative polarity. The overshoot current and large fluctuation in threshold voltage were used as evidence for our discussions. After identifying the electrical features, we progressed the biological processes such as potentiation/depression, paired-pulse facilitation (PPF) and spike-timing-dependent plasticity (STDP) to implement the neural networks. In this work, we studied the switching mechanisms of Ni/SiOx/ITO devices before and after experiencing a reversible switching. And we also investigated its application for neuromorphic computing systems. First, we checked the composition of the device and progressed the electrical measurements. The device had two operating properties that are affected by an external applied voltage, and thus, we divided it into two distinct I-V curves to experimentally investigate the features. Even if they originated from the same RRAM devices, they exhibited different electrical measurements such as a retention, threshold voltages, and the conductance ratio. The I-V curve with an abrupt switching showed a good retention time of 7000 s and a wide conductance ratio of about ~41. On the other hand, the other I-V curve that shows progressive operation displayed a low retention time of 5000 s and a narrow conductance ratio of about ~3.43. We discussed the different results that were identified on the same device and concluded that it was caused by a change of switching mechanisms induced by a reversible switching in negative polarity. The overshoot current and large fluctuation in threshold voltage were used as evidence for our discussions. After identifying the electrical features, we progressed the biological processes such as potentiation/depression, paired-pulse facilitation (PPF) and spike-timing-dependent plasticity (STDP) to implement the neural networks. Neuromorphic system Elsevier Resistive switching Elsevier Memristor Elsevier Synaptic device Elsevier Park, Jongmin oth Kim, Sungjun oth Enthalten in Elsevier Jacobs, Jacquelyn A. ELSEVIER Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners 2017 JAL : an interdisciplinary journal of materials science and solid-state chemistry and physics Lausanne (DE-627)ELV001115774 volume:903 year:2022 day:15 month:05 pages:0 https://doi.org/10.1016/j.jallcom.2022.163870 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA AR 903 2022 15 0515 0 |
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10.1016/j.jallcom.2022.163870 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001769.pica (DE-627)ELV056996233 (ELSEVIER)S0925-8388(22)00261-4 DE-627 ger DE-627 rakwb eng 630 VZ Park, Minsu verfasserin aut Compatible resistive switching mechanisms in Ni/SiOx/ITO and application to neuromorphic systems 2022transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier In this work, we studied the switching mechanisms of Ni/SiOx/ITO devices before and after experiencing a reversible switching. And we also investigated its application for neuromorphic computing systems. First, we checked the composition of the device and progressed the electrical measurements. The device had two operating properties that are affected by an external applied voltage, and thus, we divided it into two distinct I-V curves to experimentally investigate the features. Even if they originated from the same RRAM devices, they exhibited different electrical measurements such as a retention, threshold voltages, and the conductance ratio. The I-V curve with an abrupt switching showed a good retention time of 7000 s and a wide conductance ratio of about ~41. On the other hand, the other I-V curve that shows progressive operation displayed a low retention time of 5000 s and a narrow conductance ratio of about ~3.43. We discussed the different results that were identified on the same device and concluded that it was caused by a change of switching mechanisms induced by a reversible switching in negative polarity. The overshoot current and large fluctuation in threshold voltage were used as evidence for our discussions. After identifying the electrical features, we progressed the biological processes such as potentiation/depression, paired-pulse facilitation (PPF) and spike-timing-dependent plasticity (STDP) to implement the neural networks. In this work, we studied the switching mechanisms of Ni/SiOx/ITO devices before and after experiencing a reversible switching. And we also investigated its application for neuromorphic computing systems. First, we checked the composition of the device and progressed the electrical measurements. The device had two operating properties that are affected by an external applied voltage, and thus, we divided it into two distinct I-V curves to experimentally investigate the features. Even if they originated from the same RRAM devices, they exhibited different electrical measurements such as a retention, threshold voltages, and the conductance ratio. The I-V curve with an abrupt switching showed a good retention time of 7000 s and a wide conductance ratio of about ~41. On the other hand, the other I-V curve that shows progressive operation displayed a low retention time of 5000 s and a narrow conductance ratio of about ~3.43. We discussed the different results that were identified on the same device and concluded that it was caused by a change of switching mechanisms induced by a reversible switching in negative polarity. The overshoot current and large fluctuation in threshold voltage were used as evidence for our discussions. After identifying the electrical features, we progressed the biological processes such as potentiation/depression, paired-pulse facilitation (PPF) and spike-timing-dependent plasticity (STDP) to implement the neural networks. Neuromorphic system Elsevier Resistive switching Elsevier Memristor Elsevier Synaptic device Elsevier Park, Jongmin oth Kim, Sungjun oth Enthalten in Elsevier Jacobs, Jacquelyn A. ELSEVIER Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners 2017 JAL : an interdisciplinary journal of materials science and solid-state chemistry and physics Lausanne (DE-627)ELV001115774 volume:903 year:2022 day:15 month:05 pages:0 https://doi.org/10.1016/j.jallcom.2022.163870 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA AR 903 2022 15 0515 0 |
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10.1016/j.jallcom.2022.163870 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001769.pica (DE-627)ELV056996233 (ELSEVIER)S0925-8388(22)00261-4 DE-627 ger DE-627 rakwb eng 630 VZ Park, Minsu verfasserin aut Compatible resistive switching mechanisms in Ni/SiOx/ITO and application to neuromorphic systems 2022transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier In this work, we studied the switching mechanisms of Ni/SiOx/ITO devices before and after experiencing a reversible switching. And we also investigated its application for neuromorphic computing systems. First, we checked the composition of the device and progressed the electrical measurements. The device had two operating properties that are affected by an external applied voltage, and thus, we divided it into two distinct I-V curves to experimentally investigate the features. Even if they originated from the same RRAM devices, they exhibited different electrical measurements such as a retention, threshold voltages, and the conductance ratio. The I-V curve with an abrupt switching showed a good retention time of 7000 s and a wide conductance ratio of about ~41. On the other hand, the other I-V curve that shows progressive operation displayed a low retention time of 5000 s and a narrow conductance ratio of about ~3.43. We discussed the different results that were identified on the same device and concluded that it was caused by a change of switching mechanisms induced by a reversible switching in negative polarity. The overshoot current and large fluctuation in threshold voltage were used as evidence for our discussions. After identifying the electrical features, we progressed the biological processes such as potentiation/depression, paired-pulse facilitation (PPF) and spike-timing-dependent plasticity (STDP) to implement the neural networks. In this work, we studied the switching mechanisms of Ni/SiOx/ITO devices before and after experiencing a reversible switching. And we also investigated its application for neuromorphic computing systems. First, we checked the composition of the device and progressed the electrical measurements. The device had two operating properties that are affected by an external applied voltage, and thus, we divided it into two distinct I-V curves to experimentally investigate the features. Even if they originated from the same RRAM devices, they exhibited different electrical measurements such as a retention, threshold voltages, and the conductance ratio. The I-V curve with an abrupt switching showed a good retention time of 7000 s and a wide conductance ratio of about ~41. On the other hand, the other I-V curve that shows progressive operation displayed a low retention time of 5000 s and a narrow conductance ratio of about ~3.43. We discussed the different results that were identified on the same device and concluded that it was caused by a change of switching mechanisms induced by a reversible switching in negative polarity. The overshoot current and large fluctuation in threshold voltage were used as evidence for our discussions. After identifying the electrical features, we progressed the biological processes such as potentiation/depression, paired-pulse facilitation (PPF) and spike-timing-dependent plasticity (STDP) to implement the neural networks. Neuromorphic system Elsevier Resistive switching Elsevier Memristor Elsevier Synaptic device Elsevier Park, Jongmin oth Kim, Sungjun oth Enthalten in Elsevier Jacobs, Jacquelyn A. ELSEVIER Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners 2017 JAL : an interdisciplinary journal of materials science and solid-state chemistry and physics Lausanne (DE-627)ELV001115774 volume:903 year:2022 day:15 month:05 pages:0 https://doi.org/10.1016/j.jallcom.2022.163870 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA AR 903 2022 15 0515 0 |
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10.1016/j.jallcom.2022.163870 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001769.pica (DE-627)ELV056996233 (ELSEVIER)S0925-8388(22)00261-4 DE-627 ger DE-627 rakwb eng 630 VZ Park, Minsu verfasserin aut Compatible resistive switching mechanisms in Ni/SiOx/ITO and application to neuromorphic systems 2022transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier In this work, we studied the switching mechanisms of Ni/SiOx/ITO devices before and after experiencing a reversible switching. And we also investigated its application for neuromorphic computing systems. First, we checked the composition of the device and progressed the electrical measurements. The device had two operating properties that are affected by an external applied voltage, and thus, we divided it into two distinct I-V curves to experimentally investigate the features. Even if they originated from the same RRAM devices, they exhibited different electrical measurements such as a retention, threshold voltages, and the conductance ratio. The I-V curve with an abrupt switching showed a good retention time of 7000 s and a wide conductance ratio of about ~41. On the other hand, the other I-V curve that shows progressive operation displayed a low retention time of 5000 s and a narrow conductance ratio of about ~3.43. We discussed the different results that were identified on the same device and concluded that it was caused by a change of switching mechanisms induced by a reversible switching in negative polarity. The overshoot current and large fluctuation in threshold voltage were used as evidence for our discussions. After identifying the electrical features, we progressed the biological processes such as potentiation/depression, paired-pulse facilitation (PPF) and spike-timing-dependent plasticity (STDP) to implement the neural networks. In this work, we studied the switching mechanisms of Ni/SiOx/ITO devices before and after experiencing a reversible switching. And we also investigated its application for neuromorphic computing systems. First, we checked the composition of the device and progressed the electrical measurements. The device had two operating properties that are affected by an external applied voltage, and thus, we divided it into two distinct I-V curves to experimentally investigate the features. Even if they originated from the same RRAM devices, they exhibited different electrical measurements such as a retention, threshold voltages, and the conductance ratio. The I-V curve with an abrupt switching showed a good retention time of 7000 s and a wide conductance ratio of about ~41. On the other hand, the other I-V curve that shows progressive operation displayed a low retention time of 5000 s and a narrow conductance ratio of about ~3.43. We discussed the different results that were identified on the same device and concluded that it was caused by a change of switching mechanisms induced by a reversible switching in negative polarity. The overshoot current and large fluctuation in threshold voltage were used as evidence for our discussions. After identifying the electrical features, we progressed the biological processes such as potentiation/depression, paired-pulse facilitation (PPF) and spike-timing-dependent plasticity (STDP) to implement the neural networks. Neuromorphic system Elsevier Resistive switching Elsevier Memristor Elsevier Synaptic device Elsevier Park, Jongmin oth Kim, Sungjun oth Enthalten in Elsevier Jacobs, Jacquelyn A. ELSEVIER Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners 2017 JAL : an interdisciplinary journal of materials science and solid-state chemistry and physics Lausanne (DE-627)ELV001115774 volume:903 year:2022 day:15 month:05 pages:0 https://doi.org/10.1016/j.jallcom.2022.163870 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA AR 903 2022 15 0515 0 |
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Enthalten in Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners Lausanne volume:903 year:2022 day:15 month:05 pages:0 |
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Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners |
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And we also investigated its application for neuromorphic computing systems. First, we checked the composition of the device and progressed the electrical measurements. The device had two operating properties that are affected by an external applied voltage, and thus, we divided it into two distinct I-V curves to experimentally investigate the features. Even if they originated from the same RRAM devices, they exhibited different electrical measurements such as a retention, threshold voltages, and the conductance ratio. The I-V curve with an abrupt switching showed a good retention time of 7000 s and a wide conductance ratio of about ~41. On the other hand, the other I-V curve that shows progressive operation displayed a low retention time of 5000 s and a narrow conductance ratio of about ~3.43. We discussed the different results that were identified on the same device and concluded that it was caused by a change of switching mechanisms induced by a reversible switching in negative polarity. The overshoot current and large fluctuation in threshold voltage were used as evidence for our discussions. After identifying the electrical features, we progressed the biological processes such as potentiation/depression, paired-pulse facilitation (PPF) and spike-timing-dependent plasticity (STDP) to implement the neural networks.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">In this work, we studied the switching mechanisms of Ni/SiOx/ITO devices before and after experiencing a reversible switching. And we also investigated its application for neuromorphic computing systems. First, we checked the composition of the device and progressed the electrical measurements. The device had two operating properties that are affected by an external applied voltage, and thus, we divided it into two distinct I-V curves to experimentally investigate the features. Even if they originated from the same RRAM devices, they exhibited different electrical measurements such as a retention, threshold voltages, and the conductance ratio. The I-V curve with an abrupt switching showed a good retention time of 7000 s and a wide conductance ratio of about ~41. On the other hand, the other I-V curve that shows progressive operation displayed a low retention time of 5000 s and a narrow conductance ratio of about ~3.43. We discussed the different results that were identified on the same device and concluded that it was caused by a change of switching mechanisms induced by a reversible switching in negative polarity. The overshoot current and large fluctuation in threshold voltage were used as evidence for our discussions. 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compatible resistive switching mechanisms in ni/siox/ito and application to neuromorphic systems |
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Compatible resistive switching mechanisms in Ni/SiOx/ITO and application to neuromorphic systems |
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In this work, we studied the switching mechanisms of Ni/SiOx/ITO devices before and after experiencing a reversible switching. And we also investigated its application for neuromorphic computing systems. First, we checked the composition of the device and progressed the electrical measurements. The device had two operating properties that are affected by an external applied voltage, and thus, we divided it into two distinct I-V curves to experimentally investigate the features. Even if they originated from the same RRAM devices, they exhibited different electrical measurements such as a retention, threshold voltages, and the conductance ratio. The I-V curve with an abrupt switching showed a good retention time of 7000 s and a wide conductance ratio of about ~41. On the other hand, the other I-V curve that shows progressive operation displayed a low retention time of 5000 s and a narrow conductance ratio of about ~3.43. We discussed the different results that were identified on the same device and concluded that it was caused by a change of switching mechanisms induced by a reversible switching in negative polarity. The overshoot current and large fluctuation in threshold voltage were used as evidence for our discussions. After identifying the electrical features, we progressed the biological processes such as potentiation/depression, paired-pulse facilitation (PPF) and spike-timing-dependent plasticity (STDP) to implement the neural networks. |
| abstractGer |
In this work, we studied the switching mechanisms of Ni/SiOx/ITO devices before and after experiencing a reversible switching. And we also investigated its application for neuromorphic computing systems. First, we checked the composition of the device and progressed the electrical measurements. The device had two operating properties that are affected by an external applied voltage, and thus, we divided it into two distinct I-V curves to experimentally investigate the features. Even if they originated from the same RRAM devices, they exhibited different electrical measurements such as a retention, threshold voltages, and the conductance ratio. The I-V curve with an abrupt switching showed a good retention time of 7000 s and a wide conductance ratio of about ~41. On the other hand, the other I-V curve that shows progressive operation displayed a low retention time of 5000 s and a narrow conductance ratio of about ~3.43. We discussed the different results that were identified on the same device and concluded that it was caused by a change of switching mechanisms induced by a reversible switching in negative polarity. The overshoot current and large fluctuation in threshold voltage were used as evidence for our discussions. After identifying the electrical features, we progressed the biological processes such as potentiation/depression, paired-pulse facilitation (PPF) and spike-timing-dependent plasticity (STDP) to implement the neural networks. |
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In this work, we studied the switching mechanisms of Ni/SiOx/ITO devices before and after experiencing a reversible switching. And we also investigated its application for neuromorphic computing systems. First, we checked the composition of the device and progressed the electrical measurements. The device had two operating properties that are affected by an external applied voltage, and thus, we divided it into two distinct I-V curves to experimentally investigate the features. Even if they originated from the same RRAM devices, they exhibited different electrical measurements such as a retention, threshold voltages, and the conductance ratio. The I-V curve with an abrupt switching showed a good retention time of 7000 s and a wide conductance ratio of about ~41. On the other hand, the other I-V curve that shows progressive operation displayed a low retention time of 5000 s and a narrow conductance ratio of about ~3.43. We discussed the different results that were identified on the same device and concluded that it was caused by a change of switching mechanisms induced by a reversible switching in negative polarity. The overshoot current and large fluctuation in threshold voltage were used as evidence for our discussions. After identifying the electrical features, we progressed the biological processes such as potentiation/depression, paired-pulse facilitation (PPF) and spike-timing-dependent plasticity (STDP) to implement the neural networks. |
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