Enhancement in optoelectronic properties of europium-doped ZnS thin films prepared by nebulizer spray technique for UV photodetection applications
In this work, structural, optical, photoluminescence, and photoconductivity properties of Eu3+ (0, 1, 3, and 5%) doped ZnS thin films are investigated. These thin films are fabricated by a low-cost spray pyrolysis method. The structural studies confirm the single-phase nature of pure and Eu3+ doped...
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| Autor*in: |
Dharani Devi, M. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2022transfer abstract |
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| Übergeordnetes Werk: |
Enthalten in: Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate - Narattha, Chalermphan ELSEVIER, 2022, Amsterdam [u.a.] |
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| Übergeordnetes Werk: |
volume:144 ; year:2022 ; day:15 ; month:06 ; pages:0 |
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| DOI / URN: |
10.1016/j.mssp.2022.106572 |
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ELV057302375 |
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| 245 | 1 | 0 | |a Enhancement in optoelectronic properties of europium-doped ZnS thin films prepared by nebulizer spray technique for UV photodetection applications |
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| 520 | |a In this work, structural, optical, photoluminescence, and photoconductivity properties of Eu3+ (0, 1, 3, and 5%) doped ZnS thin films are investigated. These thin films are fabricated by a low-cost spray pyrolysis method. The structural studies confirm the single-phase nature of pure and Eu3+ doped ZnS thin films and these films crystallize into hexagonal wurtzite structure. Optical properties disclose the semiconductor behavior of the films. The optical bandgap (E g) values of the films are found to be 3.66, 3.62, 3.50, and 3.55 eV for ZnS, ZnS:Eu (1%) ZnS:Eu (3%) and ZnS:Eu (5%), respectively. Photoluminescence spectra of the films exhibit a high intensity visible and broad UV emission band centered at the wavelengths of 487 and 400 nm, respectively. ZnS:Eu (3%) photo-detector exhibits high responsivity, external quantum efficiency (EQE), and detectivity of 1.12 × 10−2 AW−1, 3.59% and 4.86 × 109 Jones, respectively among all the fabricated films. The present study reveals that Eu3+ doped ZnS thin film especially around 3% concentration of Eu3+ can be a potential candidate for technological applications in the semiconductor optoelectronic field. | ||
| 520 | |a In this work, structural, optical, photoluminescence, and photoconductivity properties of Eu3+ (0, 1, 3, and 5%) doped ZnS thin films are investigated. These thin films are fabricated by a low-cost spray pyrolysis method. The structural studies confirm the single-phase nature of pure and Eu3+ doped ZnS thin films and these films crystallize into hexagonal wurtzite structure. Optical properties disclose the semiconductor behavior of the films. The optical bandgap (E g) values of the films are found to be 3.66, 3.62, 3.50, and 3.55 eV for ZnS, ZnS:Eu (1%) ZnS:Eu (3%) and ZnS:Eu (5%), respectively. Photoluminescence spectra of the films exhibit a high intensity visible and broad UV emission band centered at the wavelengths of 487 and 400 nm, respectively. ZnS:Eu (3%) photo-detector exhibits high responsivity, external quantum efficiency (EQE), and detectivity of 1.12 × 10−2 AW−1, 3.59% and 4.86 × 109 Jones, respectively among all the fabricated films. The present study reveals that Eu3+ doped ZnS thin film especially around 3% concentration of Eu3+ can be a potential candidate for technological applications in the semiconductor optoelectronic field. | ||
| 650 | 7 | |a ZnS:Eu |2 Elsevier | |
| 650 | 7 | |a Nebulizer spray pyrolysis |2 Elsevier | |
| 650 | 7 | |a Photodetector applications |2 Elsevier | |
| 650 | 7 | |a Optical-electronics properties |2 Elsevier | |
| 700 | 1 | |a Vimala Juliet, A. |4 oth | |
| 700 | 1 | |a Ade, Ramesh |4 oth | |
| 700 | 1 | |a Thirumoorthi, M. |4 oth | |
| 700 | 1 | |a Diana, P. |4 oth | |
| 700 | 1 | |a Saravanakumar, S. |4 oth | |
| 700 | 1 | |a Ganesh, V. |4 oth | |
| 700 | 1 | |a Bitla, Yugandhar |4 oth | |
| 700 | 1 | |a Algarni, H. |4 oth | |
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10.1016/j.mssp.2022.106572 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001723.pica (DE-627)ELV057302375 (ELSEVIER)S1369-8001(22)00117-2 DE-627 ger DE-627 rakwb eng 690 VZ 56.45 bkl Dharani Devi, M. verfasserin aut Enhancement in optoelectronic properties of europium-doped ZnS thin films prepared by nebulizer spray technique for UV photodetection applications 2022transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier In this work, structural, optical, photoluminescence, and photoconductivity properties of Eu3+ (0, 1, 3, and 5%) doped ZnS thin films are investigated. These thin films are fabricated by a low-cost spray pyrolysis method. The structural studies confirm the single-phase nature of pure and Eu3+ doped ZnS thin films and these films crystallize into hexagonal wurtzite structure. Optical properties disclose the semiconductor behavior of the films. The optical bandgap (E g) values of the films are found to be 3.66, 3.62, 3.50, and 3.55 eV for ZnS, ZnS:Eu (1%) ZnS:Eu (3%) and ZnS:Eu (5%), respectively. Photoluminescence spectra of the films exhibit a high intensity visible and broad UV emission band centered at the wavelengths of 487 and 400 nm, respectively. ZnS:Eu (3%) photo-detector exhibits high responsivity, external quantum efficiency (EQE), and detectivity of 1.12 × 10−2 AW−1, 3.59% and 4.86 × 109 Jones, respectively among all the fabricated films. The present study reveals that Eu3+ doped ZnS thin film especially around 3% concentration of Eu3+ can be a potential candidate for technological applications in the semiconductor optoelectronic field. In this work, structural, optical, photoluminescence, and photoconductivity properties of Eu3+ (0, 1, 3, and 5%) doped ZnS thin films are investigated. These thin films are fabricated by a low-cost spray pyrolysis method. The structural studies confirm the single-phase nature of pure and Eu3+ doped ZnS thin films and these films crystallize into hexagonal wurtzite structure. Optical properties disclose the semiconductor behavior of the films. The optical bandgap (E g) values of the films are found to be 3.66, 3.62, 3.50, and 3.55 eV for ZnS, ZnS:Eu (1%) ZnS:Eu (3%) and ZnS:Eu (5%), respectively. Photoluminescence spectra of the films exhibit a high intensity visible and broad UV emission band centered at the wavelengths of 487 and 400 nm, respectively. ZnS:Eu (3%) photo-detector exhibits high responsivity, external quantum efficiency (EQE), and detectivity of 1.12 × 10−2 AW−1, 3.59% and 4.86 × 109 Jones, respectively among all the fabricated films. The present study reveals that Eu3+ doped ZnS thin film especially around 3% concentration of Eu3+ can be a potential candidate for technological applications in the semiconductor optoelectronic field. ZnS:Eu Elsevier Nebulizer spray pyrolysis Elsevier Photodetector applications Elsevier Optical-electronics properties Elsevier Vimala Juliet, A. oth Ade, Ramesh oth Thirumoorthi, M. oth Diana, P. oth Saravanakumar, S. oth Ganesh, V. oth Bitla, Yugandhar oth Algarni, H. oth Enthalten in Elsevier Science Narattha, Chalermphan ELSEVIER Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate 2022 Amsterdam [u.a.] (DE-627)ELV007709056 volume:144 year:2022 day:15 month:06 pages:0 https://doi.org/10.1016/j.mssp.2022.106572 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.45 Baustoffkunde VZ AR 144 2022 15 0615 0 |
| spelling |
10.1016/j.mssp.2022.106572 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001723.pica (DE-627)ELV057302375 (ELSEVIER)S1369-8001(22)00117-2 DE-627 ger DE-627 rakwb eng 690 VZ 56.45 bkl Dharani Devi, M. verfasserin aut Enhancement in optoelectronic properties of europium-doped ZnS thin films prepared by nebulizer spray technique for UV photodetection applications 2022transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier In this work, structural, optical, photoluminescence, and photoconductivity properties of Eu3+ (0, 1, 3, and 5%) doped ZnS thin films are investigated. These thin films are fabricated by a low-cost spray pyrolysis method. The structural studies confirm the single-phase nature of pure and Eu3+ doped ZnS thin films and these films crystallize into hexagonal wurtzite structure. Optical properties disclose the semiconductor behavior of the films. The optical bandgap (E g) values of the films are found to be 3.66, 3.62, 3.50, and 3.55 eV for ZnS, ZnS:Eu (1%) ZnS:Eu (3%) and ZnS:Eu (5%), respectively. Photoluminescence spectra of the films exhibit a high intensity visible and broad UV emission band centered at the wavelengths of 487 and 400 nm, respectively. ZnS:Eu (3%) photo-detector exhibits high responsivity, external quantum efficiency (EQE), and detectivity of 1.12 × 10−2 AW−1, 3.59% and 4.86 × 109 Jones, respectively among all the fabricated films. The present study reveals that Eu3+ doped ZnS thin film especially around 3% concentration of Eu3+ can be a potential candidate for technological applications in the semiconductor optoelectronic field. In this work, structural, optical, photoluminescence, and photoconductivity properties of Eu3+ (0, 1, 3, and 5%) doped ZnS thin films are investigated. These thin films are fabricated by a low-cost spray pyrolysis method. The structural studies confirm the single-phase nature of pure and Eu3+ doped ZnS thin films and these films crystallize into hexagonal wurtzite structure. Optical properties disclose the semiconductor behavior of the films. The optical bandgap (E g) values of the films are found to be 3.66, 3.62, 3.50, and 3.55 eV for ZnS, ZnS:Eu (1%) ZnS:Eu (3%) and ZnS:Eu (5%), respectively. Photoluminescence spectra of the films exhibit a high intensity visible and broad UV emission band centered at the wavelengths of 487 and 400 nm, respectively. ZnS:Eu (3%) photo-detector exhibits high responsivity, external quantum efficiency (EQE), and detectivity of 1.12 × 10−2 AW−1, 3.59% and 4.86 × 109 Jones, respectively among all the fabricated films. The present study reveals that Eu3+ doped ZnS thin film especially around 3% concentration of Eu3+ can be a potential candidate for technological applications in the semiconductor optoelectronic field. ZnS:Eu Elsevier Nebulizer spray pyrolysis Elsevier Photodetector applications Elsevier Optical-electronics properties Elsevier Vimala Juliet, A. oth Ade, Ramesh oth Thirumoorthi, M. oth Diana, P. oth Saravanakumar, S. oth Ganesh, V. oth Bitla, Yugandhar oth Algarni, H. oth Enthalten in Elsevier Science Narattha, Chalermphan ELSEVIER Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate 2022 Amsterdam [u.a.] (DE-627)ELV007709056 volume:144 year:2022 day:15 month:06 pages:0 https://doi.org/10.1016/j.mssp.2022.106572 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.45 Baustoffkunde VZ AR 144 2022 15 0615 0 |
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10.1016/j.mssp.2022.106572 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001723.pica (DE-627)ELV057302375 (ELSEVIER)S1369-8001(22)00117-2 DE-627 ger DE-627 rakwb eng 690 VZ 56.45 bkl Dharani Devi, M. verfasserin aut Enhancement in optoelectronic properties of europium-doped ZnS thin films prepared by nebulizer spray technique for UV photodetection applications 2022transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier In this work, structural, optical, photoluminescence, and photoconductivity properties of Eu3+ (0, 1, 3, and 5%) doped ZnS thin films are investigated. These thin films are fabricated by a low-cost spray pyrolysis method. The structural studies confirm the single-phase nature of pure and Eu3+ doped ZnS thin films and these films crystallize into hexagonal wurtzite structure. Optical properties disclose the semiconductor behavior of the films. The optical bandgap (E g) values of the films are found to be 3.66, 3.62, 3.50, and 3.55 eV for ZnS, ZnS:Eu (1%) ZnS:Eu (3%) and ZnS:Eu (5%), respectively. Photoluminescence spectra of the films exhibit a high intensity visible and broad UV emission band centered at the wavelengths of 487 and 400 nm, respectively. ZnS:Eu (3%) photo-detector exhibits high responsivity, external quantum efficiency (EQE), and detectivity of 1.12 × 10−2 AW−1, 3.59% and 4.86 × 109 Jones, respectively among all the fabricated films. The present study reveals that Eu3+ doped ZnS thin film especially around 3% concentration of Eu3+ can be a potential candidate for technological applications in the semiconductor optoelectronic field. In this work, structural, optical, photoluminescence, and photoconductivity properties of Eu3+ (0, 1, 3, and 5%) doped ZnS thin films are investigated. These thin films are fabricated by a low-cost spray pyrolysis method. The structural studies confirm the single-phase nature of pure and Eu3+ doped ZnS thin films and these films crystallize into hexagonal wurtzite structure. Optical properties disclose the semiconductor behavior of the films. The optical bandgap (E g) values of the films are found to be 3.66, 3.62, 3.50, and 3.55 eV for ZnS, ZnS:Eu (1%) ZnS:Eu (3%) and ZnS:Eu (5%), respectively. Photoluminescence spectra of the films exhibit a high intensity visible and broad UV emission band centered at the wavelengths of 487 and 400 nm, respectively. ZnS:Eu (3%) photo-detector exhibits high responsivity, external quantum efficiency (EQE), and detectivity of 1.12 × 10−2 AW−1, 3.59% and 4.86 × 109 Jones, respectively among all the fabricated films. The present study reveals that Eu3+ doped ZnS thin film especially around 3% concentration of Eu3+ can be a potential candidate for technological applications in the semiconductor optoelectronic field. ZnS:Eu Elsevier Nebulizer spray pyrolysis Elsevier Photodetector applications Elsevier Optical-electronics properties Elsevier Vimala Juliet, A. oth Ade, Ramesh oth Thirumoorthi, M. oth Diana, P. oth Saravanakumar, S. oth Ganesh, V. oth Bitla, Yugandhar oth Algarni, H. oth Enthalten in Elsevier Science Narattha, Chalermphan ELSEVIER Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate 2022 Amsterdam [u.a.] (DE-627)ELV007709056 volume:144 year:2022 day:15 month:06 pages:0 https://doi.org/10.1016/j.mssp.2022.106572 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.45 Baustoffkunde VZ AR 144 2022 15 0615 0 |
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10.1016/j.mssp.2022.106572 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001723.pica (DE-627)ELV057302375 (ELSEVIER)S1369-8001(22)00117-2 DE-627 ger DE-627 rakwb eng 690 VZ 56.45 bkl Dharani Devi, M. verfasserin aut Enhancement in optoelectronic properties of europium-doped ZnS thin films prepared by nebulizer spray technique for UV photodetection applications 2022transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier In this work, structural, optical, photoluminescence, and photoconductivity properties of Eu3+ (0, 1, 3, and 5%) doped ZnS thin films are investigated. These thin films are fabricated by a low-cost spray pyrolysis method. The structural studies confirm the single-phase nature of pure and Eu3+ doped ZnS thin films and these films crystallize into hexagonal wurtzite structure. Optical properties disclose the semiconductor behavior of the films. The optical bandgap (E g) values of the films are found to be 3.66, 3.62, 3.50, and 3.55 eV for ZnS, ZnS:Eu (1%) ZnS:Eu (3%) and ZnS:Eu (5%), respectively. Photoluminescence spectra of the films exhibit a high intensity visible and broad UV emission band centered at the wavelengths of 487 and 400 nm, respectively. ZnS:Eu (3%) photo-detector exhibits high responsivity, external quantum efficiency (EQE), and detectivity of 1.12 × 10−2 AW−1, 3.59% and 4.86 × 109 Jones, respectively among all the fabricated films. The present study reveals that Eu3+ doped ZnS thin film especially around 3% concentration of Eu3+ can be a potential candidate for technological applications in the semiconductor optoelectronic field. In this work, structural, optical, photoluminescence, and photoconductivity properties of Eu3+ (0, 1, 3, and 5%) doped ZnS thin films are investigated. These thin films are fabricated by a low-cost spray pyrolysis method. The structural studies confirm the single-phase nature of pure and Eu3+ doped ZnS thin films and these films crystallize into hexagonal wurtzite structure. Optical properties disclose the semiconductor behavior of the films. The optical bandgap (E g) values of the films are found to be 3.66, 3.62, 3.50, and 3.55 eV for ZnS, ZnS:Eu (1%) ZnS:Eu (3%) and ZnS:Eu (5%), respectively. Photoluminescence spectra of the films exhibit a high intensity visible and broad UV emission band centered at the wavelengths of 487 and 400 nm, respectively. ZnS:Eu (3%) photo-detector exhibits high responsivity, external quantum efficiency (EQE), and detectivity of 1.12 × 10−2 AW−1, 3.59% and 4.86 × 109 Jones, respectively among all the fabricated films. The present study reveals that Eu3+ doped ZnS thin film especially around 3% concentration of Eu3+ can be a potential candidate for technological applications in the semiconductor optoelectronic field. ZnS:Eu Elsevier Nebulizer spray pyrolysis Elsevier Photodetector applications Elsevier Optical-electronics properties Elsevier Vimala Juliet, A. oth Ade, Ramesh oth Thirumoorthi, M. oth Diana, P. oth Saravanakumar, S. oth Ganesh, V. oth Bitla, Yugandhar oth Algarni, H. oth Enthalten in Elsevier Science Narattha, Chalermphan ELSEVIER Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate 2022 Amsterdam [u.a.] (DE-627)ELV007709056 volume:144 year:2022 day:15 month:06 pages:0 https://doi.org/10.1016/j.mssp.2022.106572 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.45 Baustoffkunde VZ AR 144 2022 15 0615 0 |
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10.1016/j.mssp.2022.106572 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001723.pica (DE-627)ELV057302375 (ELSEVIER)S1369-8001(22)00117-2 DE-627 ger DE-627 rakwb eng 690 VZ 56.45 bkl Dharani Devi, M. verfasserin aut Enhancement in optoelectronic properties of europium-doped ZnS thin films prepared by nebulizer spray technique for UV photodetection applications 2022transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier In this work, structural, optical, photoluminescence, and photoconductivity properties of Eu3+ (0, 1, 3, and 5%) doped ZnS thin films are investigated. These thin films are fabricated by a low-cost spray pyrolysis method. The structural studies confirm the single-phase nature of pure and Eu3+ doped ZnS thin films and these films crystallize into hexagonal wurtzite structure. Optical properties disclose the semiconductor behavior of the films. The optical bandgap (E g) values of the films are found to be 3.66, 3.62, 3.50, and 3.55 eV for ZnS, ZnS:Eu (1%) ZnS:Eu (3%) and ZnS:Eu (5%), respectively. Photoluminescence spectra of the films exhibit a high intensity visible and broad UV emission band centered at the wavelengths of 487 and 400 nm, respectively. ZnS:Eu (3%) photo-detector exhibits high responsivity, external quantum efficiency (EQE), and detectivity of 1.12 × 10−2 AW−1, 3.59% and 4.86 × 109 Jones, respectively among all the fabricated films. The present study reveals that Eu3+ doped ZnS thin film especially around 3% concentration of Eu3+ can be a potential candidate for technological applications in the semiconductor optoelectronic field. In this work, structural, optical, photoluminescence, and photoconductivity properties of Eu3+ (0, 1, 3, and 5%) doped ZnS thin films are investigated. These thin films are fabricated by a low-cost spray pyrolysis method. The structural studies confirm the single-phase nature of pure and Eu3+ doped ZnS thin films and these films crystallize into hexagonal wurtzite structure. Optical properties disclose the semiconductor behavior of the films. The optical bandgap (E g) values of the films are found to be 3.66, 3.62, 3.50, and 3.55 eV for ZnS, ZnS:Eu (1%) ZnS:Eu (3%) and ZnS:Eu (5%), respectively. Photoluminescence spectra of the films exhibit a high intensity visible and broad UV emission band centered at the wavelengths of 487 and 400 nm, respectively. ZnS:Eu (3%) photo-detector exhibits high responsivity, external quantum efficiency (EQE), and detectivity of 1.12 × 10−2 AW−1, 3.59% and 4.86 × 109 Jones, respectively among all the fabricated films. The present study reveals that Eu3+ doped ZnS thin film especially around 3% concentration of Eu3+ can be a potential candidate for technological applications in the semiconductor optoelectronic field. ZnS:Eu Elsevier Nebulizer spray pyrolysis Elsevier Photodetector applications Elsevier Optical-electronics properties Elsevier Vimala Juliet, A. oth Ade, Ramesh oth Thirumoorthi, M. oth Diana, P. oth Saravanakumar, S. oth Ganesh, V. oth Bitla, Yugandhar oth Algarni, H. oth Enthalten in Elsevier Science Narattha, Chalermphan ELSEVIER Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate 2022 Amsterdam [u.a.] (DE-627)ELV007709056 volume:144 year:2022 day:15 month:06 pages:0 https://doi.org/10.1016/j.mssp.2022.106572 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.45 Baustoffkunde VZ AR 144 2022 15 0615 0 |
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Enhancement in optoelectronic properties of europium-doped ZnS thin films prepared by nebulizer spray technique for UV photodetection applications |
| abstract |
In this work, structural, optical, photoluminescence, and photoconductivity properties of Eu3+ (0, 1, 3, and 5%) doped ZnS thin films are investigated. These thin films are fabricated by a low-cost spray pyrolysis method. The structural studies confirm the single-phase nature of pure and Eu3+ doped ZnS thin films and these films crystallize into hexagonal wurtzite structure. Optical properties disclose the semiconductor behavior of the films. The optical bandgap (E g) values of the films are found to be 3.66, 3.62, 3.50, and 3.55 eV for ZnS, ZnS:Eu (1%) ZnS:Eu (3%) and ZnS:Eu (5%), respectively. Photoluminescence spectra of the films exhibit a high intensity visible and broad UV emission band centered at the wavelengths of 487 and 400 nm, respectively. ZnS:Eu (3%) photo-detector exhibits high responsivity, external quantum efficiency (EQE), and detectivity of 1.12 × 10−2 AW−1, 3.59% and 4.86 × 109 Jones, respectively among all the fabricated films. The present study reveals that Eu3+ doped ZnS thin film especially around 3% concentration of Eu3+ can be a potential candidate for technological applications in the semiconductor optoelectronic field. |
| abstractGer |
In this work, structural, optical, photoluminescence, and photoconductivity properties of Eu3+ (0, 1, 3, and 5%) doped ZnS thin films are investigated. These thin films are fabricated by a low-cost spray pyrolysis method. The structural studies confirm the single-phase nature of pure and Eu3+ doped ZnS thin films and these films crystallize into hexagonal wurtzite structure. Optical properties disclose the semiconductor behavior of the films. The optical bandgap (E g) values of the films are found to be 3.66, 3.62, 3.50, and 3.55 eV for ZnS, ZnS:Eu (1%) ZnS:Eu (3%) and ZnS:Eu (5%), respectively. Photoluminescence spectra of the films exhibit a high intensity visible and broad UV emission band centered at the wavelengths of 487 and 400 nm, respectively. ZnS:Eu (3%) photo-detector exhibits high responsivity, external quantum efficiency (EQE), and detectivity of 1.12 × 10−2 AW−1, 3.59% and 4.86 × 109 Jones, respectively among all the fabricated films. The present study reveals that Eu3+ doped ZnS thin film especially around 3% concentration of Eu3+ can be a potential candidate for technological applications in the semiconductor optoelectronic field. |
| abstract_unstemmed |
In this work, structural, optical, photoluminescence, and photoconductivity properties of Eu3+ (0, 1, 3, and 5%) doped ZnS thin films are investigated. These thin films are fabricated by a low-cost spray pyrolysis method. The structural studies confirm the single-phase nature of pure and Eu3+ doped ZnS thin films and these films crystallize into hexagonal wurtzite structure. Optical properties disclose the semiconductor behavior of the films. The optical bandgap (E g) values of the films are found to be 3.66, 3.62, 3.50, and 3.55 eV for ZnS, ZnS:Eu (1%) ZnS:Eu (3%) and ZnS:Eu (5%), respectively. Photoluminescence spectra of the films exhibit a high intensity visible and broad UV emission band centered at the wavelengths of 487 and 400 nm, respectively. ZnS:Eu (3%) photo-detector exhibits high responsivity, external quantum efficiency (EQE), and detectivity of 1.12 × 10−2 AW−1, 3.59% and 4.86 × 109 Jones, respectively among all the fabricated films. The present study reveals that Eu3+ doped ZnS thin film especially around 3% concentration of Eu3+ can be a potential candidate for technological applications in the semiconductor optoelectronic field. |
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