The influence of post-annealing temperature on indium-silicon oxide thin film transistors
The room temperature sputtered Indium silicon oxide (ISO) thin-films were post annealed at various temperatures and studied for thin-film transistor (TFT) active channel layer application. The structural and optical properties of as-deposited and post-annealed ISO thin-films were analysed. XRD and H...
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| Autor*in: |
Arulkumar, S. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2022transfer abstract |
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| Übergeordnetes Werk: |
Enthalten in: Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate - Narattha, Chalermphan ELSEVIER, 2022, Amsterdam [u.a.] |
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| Übergeordnetes Werk: |
volume:145 ; year:2022 ; pages:0 |
| Links: |
|---|
| DOI / URN: |
10.1016/j.mssp.2022.106665 |
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ELV057406057 |
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| 520 | |a The room temperature sputtered Indium silicon oxide (ISO) thin-films were post annealed at various temperatures and studied for thin-film transistor (TFT) active channel layer application. The structural and optical properties of as-deposited and post-annealed ISO thin-films were analysed. XRD and HRTEM analysis revealed transformation of ISO thin film from amorphous nature to polycrystalline nature when post-annealed above 150 °C. The surface topography analysis indicated the presence of smooth surfaces for all ISO thin-films. ISO thin-films exhibited the average visible transmittance of 87% regardless of post-annealing temperature. The highest saturation mobility of 39.1 cm2/V.s was achieved for ISO TFT post-annealed at 200 °C. The obtained results show that post annealing temperature has significant influence on ISO TFT properties. | ||
| 520 | |a The room temperature sputtered Indium silicon oxide (ISO) thin-films were post annealed at various temperatures and studied for thin-film transistor (TFT) active channel layer application. The structural and optical properties of as-deposited and post-annealed ISO thin-films were analysed. XRD and HRTEM analysis revealed transformation of ISO thin film from amorphous nature to polycrystalline nature when post-annealed above 150 °C. The surface topography analysis indicated the presence of smooth surfaces for all ISO thin-films. ISO thin-films exhibited the average visible transmittance of 87% regardless of post-annealing temperature. The highest saturation mobility of 39.1 cm2/V.s was achieved for ISO TFT post-annealed at 200 °C. The obtained results show that post annealing temperature has significant influence on ISO TFT properties. | ||
| 650 | 7 | |a Indium silicon oxide thin film transistors |2 Elsevier | |
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| 700 | 1 | |a Parthiban, S. |4 oth | |
| 700 | 1 | |a Kwon, J.Y. |4 oth | |
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10.1016/j.mssp.2022.106665 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001735.pica (DE-627)ELV057406057 (ELSEVIER)S1369-8001(22)00208-6 DE-627 ger DE-627 rakwb eng 690 VZ 56.45 bkl Arulkumar, S. verfasserin aut The influence of post-annealing temperature on indium-silicon oxide thin film transistors 2022transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The room temperature sputtered Indium silicon oxide (ISO) thin-films were post annealed at various temperatures and studied for thin-film transistor (TFT) active channel layer application. The structural and optical properties of as-deposited and post-annealed ISO thin-films were analysed. XRD and HRTEM analysis revealed transformation of ISO thin film from amorphous nature to polycrystalline nature when post-annealed above 150 °C. The surface topography analysis indicated the presence of smooth surfaces for all ISO thin-films. ISO thin-films exhibited the average visible transmittance of 87% regardless of post-annealing temperature. The highest saturation mobility of 39.1 cm2/V.s was achieved for ISO TFT post-annealed at 200 °C. The obtained results show that post annealing temperature has significant influence on ISO TFT properties. The room temperature sputtered Indium silicon oxide (ISO) thin-films were post annealed at various temperatures and studied for thin-film transistor (TFT) active channel layer application. The structural and optical properties of as-deposited and post-annealed ISO thin-films were analysed. XRD and HRTEM analysis revealed transformation of ISO thin film from amorphous nature to polycrystalline nature when post-annealed above 150 °C. The surface topography analysis indicated the presence of smooth surfaces for all ISO thin-films. ISO thin-films exhibited the average visible transmittance of 87% regardless of post-annealing temperature. The highest saturation mobility of 39.1 cm2/V.s was achieved for ISO TFT post-annealed at 200 °C. The obtained results show that post annealing temperature has significant influence on ISO TFT properties. Indium silicon oxide thin film transistors Elsevier RF sputtering Elsevier Thin film transistor Elsevier Amorphous metal oxide semiconductor Elsevier Parthiban, S. oth Kwon, J.Y. oth Enthalten in Elsevier Science Narattha, Chalermphan ELSEVIER Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate 2022 Amsterdam [u.a.] (DE-627)ELV007709056 volume:145 year:2022 pages:0 https://doi.org/10.1016/j.mssp.2022.106665 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.45 Baustoffkunde VZ AR 145 2022 0 |
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10.1016/j.mssp.2022.106665 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001735.pica (DE-627)ELV057406057 (ELSEVIER)S1369-8001(22)00208-6 DE-627 ger DE-627 rakwb eng 690 VZ 56.45 bkl Arulkumar, S. verfasserin aut The influence of post-annealing temperature on indium-silicon oxide thin film transistors 2022transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The room temperature sputtered Indium silicon oxide (ISO) thin-films were post annealed at various temperatures and studied for thin-film transistor (TFT) active channel layer application. The structural and optical properties of as-deposited and post-annealed ISO thin-films were analysed. XRD and HRTEM analysis revealed transformation of ISO thin film from amorphous nature to polycrystalline nature when post-annealed above 150 °C. The surface topography analysis indicated the presence of smooth surfaces for all ISO thin-films. ISO thin-films exhibited the average visible transmittance of 87% regardless of post-annealing temperature. The highest saturation mobility of 39.1 cm2/V.s was achieved for ISO TFT post-annealed at 200 °C. The obtained results show that post annealing temperature has significant influence on ISO TFT properties. The room temperature sputtered Indium silicon oxide (ISO) thin-films were post annealed at various temperatures and studied for thin-film transistor (TFT) active channel layer application. The structural and optical properties of as-deposited and post-annealed ISO thin-films were analysed. XRD and HRTEM analysis revealed transformation of ISO thin film from amorphous nature to polycrystalline nature when post-annealed above 150 °C. The surface topography analysis indicated the presence of smooth surfaces for all ISO thin-films. ISO thin-films exhibited the average visible transmittance of 87% regardless of post-annealing temperature. The highest saturation mobility of 39.1 cm2/V.s was achieved for ISO TFT post-annealed at 200 °C. The obtained results show that post annealing temperature has significant influence on ISO TFT properties. Indium silicon oxide thin film transistors Elsevier RF sputtering Elsevier Thin film transistor Elsevier Amorphous metal oxide semiconductor Elsevier Parthiban, S. oth Kwon, J.Y. oth Enthalten in Elsevier Science Narattha, Chalermphan ELSEVIER Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate 2022 Amsterdam [u.a.] (DE-627)ELV007709056 volume:145 year:2022 pages:0 https://doi.org/10.1016/j.mssp.2022.106665 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.45 Baustoffkunde VZ AR 145 2022 0 |
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10.1016/j.mssp.2022.106665 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001735.pica (DE-627)ELV057406057 (ELSEVIER)S1369-8001(22)00208-6 DE-627 ger DE-627 rakwb eng 690 VZ 56.45 bkl Arulkumar, S. verfasserin aut The influence of post-annealing temperature on indium-silicon oxide thin film transistors 2022transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The room temperature sputtered Indium silicon oxide (ISO) thin-films were post annealed at various temperatures and studied for thin-film transistor (TFT) active channel layer application. The structural and optical properties of as-deposited and post-annealed ISO thin-films were analysed. XRD and HRTEM analysis revealed transformation of ISO thin film from amorphous nature to polycrystalline nature when post-annealed above 150 °C. The surface topography analysis indicated the presence of smooth surfaces for all ISO thin-films. ISO thin-films exhibited the average visible transmittance of 87% regardless of post-annealing temperature. The highest saturation mobility of 39.1 cm2/V.s was achieved for ISO TFT post-annealed at 200 °C. The obtained results show that post annealing temperature has significant influence on ISO TFT properties. The room temperature sputtered Indium silicon oxide (ISO) thin-films were post annealed at various temperatures and studied for thin-film transistor (TFT) active channel layer application. The structural and optical properties of as-deposited and post-annealed ISO thin-films were analysed. XRD and HRTEM analysis revealed transformation of ISO thin film from amorphous nature to polycrystalline nature when post-annealed above 150 °C. The surface topography analysis indicated the presence of smooth surfaces for all ISO thin-films. ISO thin-films exhibited the average visible transmittance of 87% regardless of post-annealing temperature. The highest saturation mobility of 39.1 cm2/V.s was achieved for ISO TFT post-annealed at 200 °C. The obtained results show that post annealing temperature has significant influence on ISO TFT properties. Indium silicon oxide thin film transistors Elsevier RF sputtering Elsevier Thin film transistor Elsevier Amorphous metal oxide semiconductor Elsevier Parthiban, S. oth Kwon, J.Y. oth Enthalten in Elsevier Science Narattha, Chalermphan ELSEVIER Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate 2022 Amsterdam [u.a.] (DE-627)ELV007709056 volume:145 year:2022 pages:0 https://doi.org/10.1016/j.mssp.2022.106665 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.45 Baustoffkunde VZ AR 145 2022 0 |
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10.1016/j.mssp.2022.106665 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001735.pica (DE-627)ELV057406057 (ELSEVIER)S1369-8001(22)00208-6 DE-627 ger DE-627 rakwb eng 690 VZ 56.45 bkl Arulkumar, S. verfasserin aut The influence of post-annealing temperature on indium-silicon oxide thin film transistors 2022transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The room temperature sputtered Indium silicon oxide (ISO) thin-films were post annealed at various temperatures and studied for thin-film transistor (TFT) active channel layer application. The structural and optical properties of as-deposited and post-annealed ISO thin-films were analysed. XRD and HRTEM analysis revealed transformation of ISO thin film from amorphous nature to polycrystalline nature when post-annealed above 150 °C. The surface topography analysis indicated the presence of smooth surfaces for all ISO thin-films. ISO thin-films exhibited the average visible transmittance of 87% regardless of post-annealing temperature. The highest saturation mobility of 39.1 cm2/V.s was achieved for ISO TFT post-annealed at 200 °C. The obtained results show that post annealing temperature has significant influence on ISO TFT properties. The room temperature sputtered Indium silicon oxide (ISO) thin-films were post annealed at various temperatures and studied for thin-film transistor (TFT) active channel layer application. The structural and optical properties of as-deposited and post-annealed ISO thin-films were analysed. XRD and HRTEM analysis revealed transformation of ISO thin film from amorphous nature to polycrystalline nature when post-annealed above 150 °C. The surface topography analysis indicated the presence of smooth surfaces for all ISO thin-films. ISO thin-films exhibited the average visible transmittance of 87% regardless of post-annealing temperature. The highest saturation mobility of 39.1 cm2/V.s was achieved for ISO TFT post-annealed at 200 °C. The obtained results show that post annealing temperature has significant influence on ISO TFT properties. Indium silicon oxide thin film transistors Elsevier RF sputtering Elsevier Thin film transistor Elsevier Amorphous metal oxide semiconductor Elsevier Parthiban, S. oth Kwon, J.Y. oth Enthalten in Elsevier Science Narattha, Chalermphan ELSEVIER Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate 2022 Amsterdam [u.a.] (DE-627)ELV007709056 volume:145 year:2022 pages:0 https://doi.org/10.1016/j.mssp.2022.106665 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.45 Baustoffkunde VZ AR 145 2022 0 |
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10.1016/j.mssp.2022.106665 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001735.pica (DE-627)ELV057406057 (ELSEVIER)S1369-8001(22)00208-6 DE-627 ger DE-627 rakwb eng 690 VZ 56.45 bkl Arulkumar, S. verfasserin aut The influence of post-annealing temperature on indium-silicon oxide thin film transistors 2022transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier The room temperature sputtered Indium silicon oxide (ISO) thin-films were post annealed at various temperatures and studied for thin-film transistor (TFT) active channel layer application. The structural and optical properties of as-deposited and post-annealed ISO thin-films were analysed. XRD and HRTEM analysis revealed transformation of ISO thin film from amorphous nature to polycrystalline nature when post-annealed above 150 °C. The surface topography analysis indicated the presence of smooth surfaces for all ISO thin-films. ISO thin-films exhibited the average visible transmittance of 87% regardless of post-annealing temperature. The highest saturation mobility of 39.1 cm2/V.s was achieved for ISO TFT post-annealed at 200 °C. The obtained results show that post annealing temperature has significant influence on ISO TFT properties. The room temperature sputtered Indium silicon oxide (ISO) thin-films were post annealed at various temperatures and studied for thin-film transistor (TFT) active channel layer application. The structural and optical properties of as-deposited and post-annealed ISO thin-films were analysed. XRD and HRTEM analysis revealed transformation of ISO thin film from amorphous nature to polycrystalline nature when post-annealed above 150 °C. The surface topography analysis indicated the presence of smooth surfaces for all ISO thin-films. ISO thin-films exhibited the average visible transmittance of 87% regardless of post-annealing temperature. The highest saturation mobility of 39.1 cm2/V.s was achieved for ISO TFT post-annealed at 200 °C. The obtained results show that post annealing temperature has significant influence on ISO TFT properties. Indium silicon oxide thin film transistors Elsevier RF sputtering Elsevier Thin film transistor Elsevier Amorphous metal oxide semiconductor Elsevier Parthiban, S. oth Kwon, J.Y. oth Enthalten in Elsevier Science Narattha, Chalermphan ELSEVIER Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate 2022 Amsterdam [u.a.] (DE-627)ELV007709056 volume:145 year:2022 pages:0 https://doi.org/10.1016/j.mssp.2022.106665 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U 56.45 Baustoffkunde VZ AR 145 2022 0 |
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The influence of post-annealing temperature on indium-silicon oxide thin film transistors |
| ctrlnum |
(DE-627)ELV057406057 (ELSEVIER)S1369-8001(22)00208-6 |
| title_full |
The influence of post-annealing temperature on indium-silicon oxide thin film transistors |
| author_sort |
Arulkumar, S. |
| journal |
Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate |
| journalStr |
Thermal and mechanical characterization of fly ash geopolymer with aluminium chloride and potassium hydroxide treated hemp shiv lightweight aggregate |
| lang_code |
eng |
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600 - Technology |
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marc |
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2022 |
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zzz |
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0 |
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Arulkumar, S. |
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145 |
| class |
690 VZ 56.45 bkl |
| format_se |
Elektronische Aufsätze |
| author-letter |
Arulkumar, S. |
| doi_str_mv |
10.1016/j.mssp.2022.106665 |
| dewey-full |
690 |
| title_sort |
influence of post-annealing temperature on indium-silicon oxide thin film transistors |
| title_auth |
The influence of post-annealing temperature on indium-silicon oxide thin film transistors |
| abstract |
The room temperature sputtered Indium silicon oxide (ISO) thin-films were post annealed at various temperatures and studied for thin-film transistor (TFT) active channel layer application. The structural and optical properties of as-deposited and post-annealed ISO thin-films were analysed. XRD and HRTEM analysis revealed transformation of ISO thin film from amorphous nature to polycrystalline nature when post-annealed above 150 °C. The surface topography analysis indicated the presence of smooth surfaces for all ISO thin-films. ISO thin-films exhibited the average visible transmittance of 87% regardless of post-annealing temperature. The highest saturation mobility of 39.1 cm2/V.s was achieved for ISO TFT post-annealed at 200 °C. The obtained results show that post annealing temperature has significant influence on ISO TFT properties. |
| abstractGer |
The room temperature sputtered Indium silicon oxide (ISO) thin-films were post annealed at various temperatures and studied for thin-film transistor (TFT) active channel layer application. The structural and optical properties of as-deposited and post-annealed ISO thin-films were analysed. XRD and HRTEM analysis revealed transformation of ISO thin film from amorphous nature to polycrystalline nature when post-annealed above 150 °C. The surface topography analysis indicated the presence of smooth surfaces for all ISO thin-films. ISO thin-films exhibited the average visible transmittance of 87% regardless of post-annealing temperature. The highest saturation mobility of 39.1 cm2/V.s was achieved for ISO TFT post-annealed at 200 °C. The obtained results show that post annealing temperature has significant influence on ISO TFT properties. |
| abstract_unstemmed |
The room temperature sputtered Indium silicon oxide (ISO) thin-films were post annealed at various temperatures and studied for thin-film transistor (TFT) active channel layer application. The structural and optical properties of as-deposited and post-annealed ISO thin-films were analysed. XRD and HRTEM analysis revealed transformation of ISO thin film from amorphous nature to polycrystalline nature when post-annealed above 150 °C. The surface topography analysis indicated the presence of smooth surfaces for all ISO thin-films. ISO thin-films exhibited the average visible transmittance of 87% regardless of post-annealing temperature. The highest saturation mobility of 39.1 cm2/V.s was achieved for ISO TFT post-annealed at 200 °C. The obtained results show that post annealing temperature has significant influence on ISO TFT properties. |
| collection_details |
GBV_USEFLAG_U GBV_ELV SYSFLAG_U |
| title_short |
The influence of post-annealing temperature on indium-silicon oxide thin film transistors |
| url |
https://doi.org/10.1016/j.mssp.2022.106665 |
| remote_bool |
true |
| author2 |
Parthiban, S. Kwon, J.Y. |
| author2Str |
Parthiban, S. Kwon, J.Y. |
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| doi_str |
10.1016/j.mssp.2022.106665 |
| up_date |
2024-07-06T23:08:18.441Z |
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1803872945772167168 |
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