Sol-gel-based metal-oxide thin-film transistors for high-performance flexible NMOS inverters
High-performance metal-oxide thin-film transistors (oxide-TFTs) with high-k zirconium dioxide (ZrO2) dielectric and indium-gallium-zinc oxide (IGZO) semiconducting films were developed on flexible polyimide substrates. The flexible IGZO-TFTs fabricated using a simple and effective sol-gel-based solu...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Park, Sang-Joon [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2022transfer abstract |
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| Schlagwörter: |
Sol-gel-based metal-oxide films |
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| Übergeordnetes Werk: |
Enthalten in: Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners - Jacobs, Jacquelyn A. ELSEVIER, 2017, JAL : an interdisciplinary journal of materials science and solid-state chemistry and physics, Lausanne |
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| Übergeordnetes Werk: |
volume:912 ; year:2022 ; day:15 ; month:08 ; pages:0 |
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| DOI / URN: |
10.1016/j.jallcom.2022.165228 |
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ELV057696810 |
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| 520 | |a High-performance metal-oxide thin-film transistors (oxide-TFTs) with high-k zirconium dioxide (ZrO2) dielectric and indium-gallium-zinc oxide (IGZO) semiconducting films were developed on flexible polyimide substrates. The flexible IGZO-TFTs fabricated using a simple and effective sol-gel-based solution-process combined with oxygen-enriched consecutive annealing at 200 °C, exhibited a high field-effect mobility of 13.6 cm2 V−1 s−1 at 5 V, on/off ratio of 1.05 × 106, gate leakage current of 2.7 × 10−11 A, and threshold voltage of 0.44 V. The effects of O2 annealing on the film quality of the sol-gel-based ZrO2 and IGZO were investigated by analyzing the crystallinity, morphology, and degree of metal-oxygen bonding states. Temperature-dependent steady-state direct-current measurements over the temperature range of 90–300 K, and time-domain non-quasi-static transient measurements with a minimized resistance-capacitance time constant were performed. Thus, the activation energy, density of states, interface trap density, and velocity distribution were determined to investigate the charge transport mechanism responsible for the high performance of the oxide- TFTs proposed in this study. An enhancement-load-type N-channel metal-oxide semiconductor (NMOS) inverter consisting of two oxide-TFTs fabricated via O2 annealing was demonstrated. The flexible NMOS inverter exhibited a high gain of 10.8 at 5 V and outstanding mechanical stability against 10,000 cycles of bending stresses at a strain of 30% without a passivation or buffer film. | ||
| 520 | |a High-performance metal-oxide thin-film transistors (oxide-TFTs) with high-k zirconium dioxide (ZrO2) dielectric and indium-gallium-zinc oxide (IGZO) semiconducting films were developed on flexible polyimide substrates. The flexible IGZO-TFTs fabricated using a simple and effective sol-gel-based solution-process combined with oxygen-enriched consecutive annealing at 200 °C, exhibited a high field-effect mobility of 13.6 cm2 V−1 s−1 at 5 V, on/off ratio of 1.05 × 106, gate leakage current of 2.7 × 10−11 A, and threshold voltage of 0.44 V. The effects of O2 annealing on the film quality of the sol-gel-based ZrO2 and IGZO were investigated by analyzing the crystallinity, morphology, and degree of metal-oxygen bonding states. Temperature-dependent steady-state direct-current measurements over the temperature range of 90–300 K, and time-domain non-quasi-static transient measurements with a minimized resistance-capacitance time constant were performed. Thus, the activation energy, density of states, interface trap density, and velocity distribution were determined to investigate the charge transport mechanism responsible for the high performance of the oxide- TFTs proposed in this study. An enhancement-load-type N-channel metal-oxide semiconductor (NMOS) inverter consisting of two oxide-TFTs fabricated via O2 annealing was demonstrated. The flexible NMOS inverter exhibited a high gain of 10.8 at 5 V and outstanding mechanical stability against 10,000 cycles of bending stresses at a strain of 30% without a passivation or buffer film. | ||
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| 650 | 7 | |a Flexible NMOS inverter |2 Elsevier | |
| 700 | 1 | |a Ha, Tae-Jun |4 oth | |
| 773 | 0 | 8 | |i Enthalten in |n Elsevier |a Jacobs, Jacquelyn A. ELSEVIER |t Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners |d 2017 |d JAL : an interdisciplinary journal of materials science and solid-state chemistry and physics |g Lausanne |w (DE-627)ELV001115774 |
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10.1016/j.jallcom.2022.165228 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001790.pica (DE-627)ELV057696810 (ELSEVIER)S0925-8388(22)01619-X DE-627 ger DE-627 rakwb eng 630 VZ Park, Sang-Joon verfasserin aut Sol-gel-based metal-oxide thin-film transistors for high-performance flexible NMOS inverters 2022transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier High-performance metal-oxide thin-film transistors (oxide-TFTs) with high-k zirconium dioxide (ZrO2) dielectric and indium-gallium-zinc oxide (IGZO) semiconducting films were developed on flexible polyimide substrates. The flexible IGZO-TFTs fabricated using a simple and effective sol-gel-based solution-process combined with oxygen-enriched consecutive annealing at 200 °C, exhibited a high field-effect mobility of 13.6 cm2 V−1 s−1 at 5 V, on/off ratio of 1.05 × 106, gate leakage current of 2.7 × 10−11 A, and threshold voltage of 0.44 V. The effects of O2 annealing on the film quality of the sol-gel-based ZrO2 and IGZO were investigated by analyzing the crystallinity, morphology, and degree of metal-oxygen bonding states. Temperature-dependent steady-state direct-current measurements over the temperature range of 90–300 K, and time-domain non-quasi-static transient measurements with a minimized resistance-capacitance time constant were performed. Thus, the activation energy, density of states, interface trap density, and velocity distribution were determined to investigate the charge transport mechanism responsible for the high performance of the oxide- TFTs proposed in this study. An enhancement-load-type N-channel metal-oxide semiconductor (NMOS) inverter consisting of two oxide-TFTs fabricated via O2 annealing was demonstrated. The flexible NMOS inverter exhibited a high gain of 10.8 at 5 V and outstanding mechanical stability against 10,000 cycles of bending stresses at a strain of 30% without a passivation or buffer film. High-performance metal-oxide thin-film transistors (oxide-TFTs) with high-k zirconium dioxide (ZrO2) dielectric and indium-gallium-zinc oxide (IGZO) semiconducting films were developed on flexible polyimide substrates. The flexible IGZO-TFTs fabricated using a simple and effective sol-gel-based solution-process combined with oxygen-enriched consecutive annealing at 200 °C, exhibited a high field-effect mobility of 13.6 cm2 V−1 s−1 at 5 V, on/off ratio of 1.05 × 106, gate leakage current of 2.7 × 10−11 A, and threshold voltage of 0.44 V. The effects of O2 annealing on the film quality of the sol-gel-based ZrO2 and IGZO were investigated by analyzing the crystallinity, morphology, and degree of metal-oxygen bonding states. Temperature-dependent steady-state direct-current measurements over the temperature range of 90–300 K, and time-domain non-quasi-static transient measurements with a minimized resistance-capacitance time constant were performed. Thus, the activation energy, density of states, interface trap density, and velocity distribution were determined to investigate the charge transport mechanism responsible for the high performance of the oxide- TFTs proposed in this study. An enhancement-load-type N-channel metal-oxide semiconductor (NMOS) inverter consisting of two oxide-TFTs fabricated via O2 annealing was demonstrated. The flexible NMOS inverter exhibited a high gain of 10.8 at 5 V and outstanding mechanical stability against 10,000 cycles of bending stresses at a strain of 30% without a passivation or buffer film. Oxygen annealing Elsevier Sol-gel-based metal-oxide films Elsevier Oxide-TFT Elsevier Non-quasi-static transient measurement Elsevier Flexible NMOS inverter Elsevier Ha, Tae-Jun oth Enthalten in Elsevier Jacobs, Jacquelyn A. ELSEVIER Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners 2017 JAL : an interdisciplinary journal of materials science and solid-state chemistry and physics Lausanne (DE-627)ELV001115774 volume:912 year:2022 day:15 month:08 pages:0 https://doi.org/10.1016/j.jallcom.2022.165228 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA AR 912 2022 15 0815 0 |
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10.1016/j.jallcom.2022.165228 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001790.pica (DE-627)ELV057696810 (ELSEVIER)S0925-8388(22)01619-X DE-627 ger DE-627 rakwb eng 630 VZ Park, Sang-Joon verfasserin aut Sol-gel-based metal-oxide thin-film transistors for high-performance flexible NMOS inverters 2022transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier High-performance metal-oxide thin-film transistors (oxide-TFTs) with high-k zirconium dioxide (ZrO2) dielectric and indium-gallium-zinc oxide (IGZO) semiconducting films were developed on flexible polyimide substrates. The flexible IGZO-TFTs fabricated using a simple and effective sol-gel-based solution-process combined with oxygen-enriched consecutive annealing at 200 °C, exhibited a high field-effect mobility of 13.6 cm2 V−1 s−1 at 5 V, on/off ratio of 1.05 × 106, gate leakage current of 2.7 × 10−11 A, and threshold voltage of 0.44 V. The effects of O2 annealing on the film quality of the sol-gel-based ZrO2 and IGZO were investigated by analyzing the crystallinity, morphology, and degree of metal-oxygen bonding states. Temperature-dependent steady-state direct-current measurements over the temperature range of 90–300 K, and time-domain non-quasi-static transient measurements with a minimized resistance-capacitance time constant were performed. Thus, the activation energy, density of states, interface trap density, and velocity distribution were determined to investigate the charge transport mechanism responsible for the high performance of the oxide- TFTs proposed in this study. An enhancement-load-type N-channel metal-oxide semiconductor (NMOS) inverter consisting of two oxide-TFTs fabricated via O2 annealing was demonstrated. The flexible NMOS inverter exhibited a high gain of 10.8 at 5 V and outstanding mechanical stability against 10,000 cycles of bending stresses at a strain of 30% without a passivation or buffer film. High-performance metal-oxide thin-film transistors (oxide-TFTs) with high-k zirconium dioxide (ZrO2) dielectric and indium-gallium-zinc oxide (IGZO) semiconducting films were developed on flexible polyimide substrates. The flexible IGZO-TFTs fabricated using a simple and effective sol-gel-based solution-process combined with oxygen-enriched consecutive annealing at 200 °C, exhibited a high field-effect mobility of 13.6 cm2 V−1 s−1 at 5 V, on/off ratio of 1.05 × 106, gate leakage current of 2.7 × 10−11 A, and threshold voltage of 0.44 V. The effects of O2 annealing on the film quality of the sol-gel-based ZrO2 and IGZO were investigated by analyzing the crystallinity, morphology, and degree of metal-oxygen bonding states. Temperature-dependent steady-state direct-current measurements over the temperature range of 90–300 K, and time-domain non-quasi-static transient measurements with a minimized resistance-capacitance time constant were performed. Thus, the activation energy, density of states, interface trap density, and velocity distribution were determined to investigate the charge transport mechanism responsible for the high performance of the oxide- TFTs proposed in this study. An enhancement-load-type N-channel metal-oxide semiconductor (NMOS) inverter consisting of two oxide-TFTs fabricated via O2 annealing was demonstrated. The flexible NMOS inverter exhibited a high gain of 10.8 at 5 V and outstanding mechanical stability against 10,000 cycles of bending stresses at a strain of 30% without a passivation or buffer film. Oxygen annealing Elsevier Sol-gel-based metal-oxide films Elsevier Oxide-TFT Elsevier Non-quasi-static transient measurement Elsevier Flexible NMOS inverter Elsevier Ha, Tae-Jun oth Enthalten in Elsevier Jacobs, Jacquelyn A. ELSEVIER Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners 2017 JAL : an interdisciplinary journal of materials science and solid-state chemistry and physics Lausanne (DE-627)ELV001115774 volume:912 year:2022 day:15 month:08 pages:0 https://doi.org/10.1016/j.jallcom.2022.165228 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA AR 912 2022 15 0815 0 |
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10.1016/j.jallcom.2022.165228 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001790.pica (DE-627)ELV057696810 (ELSEVIER)S0925-8388(22)01619-X DE-627 ger DE-627 rakwb eng 630 VZ Park, Sang-Joon verfasserin aut Sol-gel-based metal-oxide thin-film transistors for high-performance flexible NMOS inverters 2022transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier High-performance metal-oxide thin-film transistors (oxide-TFTs) with high-k zirconium dioxide (ZrO2) dielectric and indium-gallium-zinc oxide (IGZO) semiconducting films were developed on flexible polyimide substrates. The flexible IGZO-TFTs fabricated using a simple and effective sol-gel-based solution-process combined with oxygen-enriched consecutive annealing at 200 °C, exhibited a high field-effect mobility of 13.6 cm2 V−1 s−1 at 5 V, on/off ratio of 1.05 × 106, gate leakage current of 2.7 × 10−11 A, and threshold voltage of 0.44 V. The effects of O2 annealing on the film quality of the sol-gel-based ZrO2 and IGZO were investigated by analyzing the crystallinity, morphology, and degree of metal-oxygen bonding states. Temperature-dependent steady-state direct-current measurements over the temperature range of 90–300 K, and time-domain non-quasi-static transient measurements with a minimized resistance-capacitance time constant were performed. Thus, the activation energy, density of states, interface trap density, and velocity distribution were determined to investigate the charge transport mechanism responsible for the high performance of the oxide- TFTs proposed in this study. An enhancement-load-type N-channel metal-oxide semiconductor (NMOS) inverter consisting of two oxide-TFTs fabricated via O2 annealing was demonstrated. The flexible NMOS inverter exhibited a high gain of 10.8 at 5 V and outstanding mechanical stability against 10,000 cycles of bending stresses at a strain of 30% without a passivation or buffer film. High-performance metal-oxide thin-film transistors (oxide-TFTs) with high-k zirconium dioxide (ZrO2) dielectric and indium-gallium-zinc oxide (IGZO) semiconducting films were developed on flexible polyimide substrates. The flexible IGZO-TFTs fabricated using a simple and effective sol-gel-based solution-process combined with oxygen-enriched consecutive annealing at 200 °C, exhibited a high field-effect mobility of 13.6 cm2 V−1 s−1 at 5 V, on/off ratio of 1.05 × 106, gate leakage current of 2.7 × 10−11 A, and threshold voltage of 0.44 V. The effects of O2 annealing on the film quality of the sol-gel-based ZrO2 and IGZO were investigated by analyzing the crystallinity, morphology, and degree of metal-oxygen bonding states. Temperature-dependent steady-state direct-current measurements over the temperature range of 90–300 K, and time-domain non-quasi-static transient measurements with a minimized resistance-capacitance time constant were performed. Thus, the activation energy, density of states, interface trap density, and velocity distribution were determined to investigate the charge transport mechanism responsible for the high performance of the oxide- TFTs proposed in this study. An enhancement-load-type N-channel metal-oxide semiconductor (NMOS) inverter consisting of two oxide-TFTs fabricated via O2 annealing was demonstrated. The flexible NMOS inverter exhibited a high gain of 10.8 at 5 V and outstanding mechanical stability against 10,000 cycles of bending stresses at a strain of 30% without a passivation or buffer film. Oxygen annealing Elsevier Sol-gel-based metal-oxide films Elsevier Oxide-TFT Elsevier Non-quasi-static transient measurement Elsevier Flexible NMOS inverter Elsevier Ha, Tae-Jun oth Enthalten in Elsevier Jacobs, Jacquelyn A. ELSEVIER Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners 2017 JAL : an interdisciplinary journal of materials science and solid-state chemistry and physics Lausanne (DE-627)ELV001115774 volume:912 year:2022 day:15 month:08 pages:0 https://doi.org/10.1016/j.jallcom.2022.165228 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA AR 912 2022 15 0815 0 |
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10.1016/j.jallcom.2022.165228 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001790.pica (DE-627)ELV057696810 (ELSEVIER)S0925-8388(22)01619-X DE-627 ger DE-627 rakwb eng 630 VZ Park, Sang-Joon verfasserin aut Sol-gel-based metal-oxide thin-film transistors for high-performance flexible NMOS inverters 2022transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier High-performance metal-oxide thin-film transistors (oxide-TFTs) with high-k zirconium dioxide (ZrO2) dielectric and indium-gallium-zinc oxide (IGZO) semiconducting films were developed on flexible polyimide substrates. The flexible IGZO-TFTs fabricated using a simple and effective sol-gel-based solution-process combined with oxygen-enriched consecutive annealing at 200 °C, exhibited a high field-effect mobility of 13.6 cm2 V−1 s−1 at 5 V, on/off ratio of 1.05 × 106, gate leakage current of 2.7 × 10−11 A, and threshold voltage of 0.44 V. The effects of O2 annealing on the film quality of the sol-gel-based ZrO2 and IGZO were investigated by analyzing the crystallinity, morphology, and degree of metal-oxygen bonding states. Temperature-dependent steady-state direct-current measurements over the temperature range of 90–300 K, and time-domain non-quasi-static transient measurements with a minimized resistance-capacitance time constant were performed. Thus, the activation energy, density of states, interface trap density, and velocity distribution were determined to investigate the charge transport mechanism responsible for the high performance of the oxide- TFTs proposed in this study. An enhancement-load-type N-channel metal-oxide semiconductor (NMOS) inverter consisting of two oxide-TFTs fabricated via O2 annealing was demonstrated. The flexible NMOS inverter exhibited a high gain of 10.8 at 5 V and outstanding mechanical stability against 10,000 cycles of bending stresses at a strain of 30% without a passivation or buffer film. High-performance metal-oxide thin-film transistors (oxide-TFTs) with high-k zirconium dioxide (ZrO2) dielectric and indium-gallium-zinc oxide (IGZO) semiconducting films were developed on flexible polyimide substrates. The flexible IGZO-TFTs fabricated using a simple and effective sol-gel-based solution-process combined with oxygen-enriched consecutive annealing at 200 °C, exhibited a high field-effect mobility of 13.6 cm2 V−1 s−1 at 5 V, on/off ratio of 1.05 × 106, gate leakage current of 2.7 × 10−11 A, and threshold voltage of 0.44 V. The effects of O2 annealing on the film quality of the sol-gel-based ZrO2 and IGZO were investigated by analyzing the crystallinity, morphology, and degree of metal-oxygen bonding states. Temperature-dependent steady-state direct-current measurements over the temperature range of 90–300 K, and time-domain non-quasi-static transient measurements with a minimized resistance-capacitance time constant were performed. Thus, the activation energy, density of states, interface trap density, and velocity distribution were determined to investigate the charge transport mechanism responsible for the high performance of the oxide- TFTs proposed in this study. An enhancement-load-type N-channel metal-oxide semiconductor (NMOS) inverter consisting of two oxide-TFTs fabricated via O2 annealing was demonstrated. The flexible NMOS inverter exhibited a high gain of 10.8 at 5 V and outstanding mechanical stability against 10,000 cycles of bending stresses at a strain of 30% without a passivation or buffer film. Oxygen annealing Elsevier Sol-gel-based metal-oxide films Elsevier Oxide-TFT Elsevier Non-quasi-static transient measurement Elsevier Flexible NMOS inverter Elsevier Ha, Tae-Jun oth Enthalten in Elsevier Jacobs, Jacquelyn A. ELSEVIER Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners 2017 JAL : an interdisciplinary journal of materials science and solid-state chemistry and physics Lausanne (DE-627)ELV001115774 volume:912 year:2022 day:15 month:08 pages:0 https://doi.org/10.1016/j.jallcom.2022.165228 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA AR 912 2022 15 0815 0 |
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10.1016/j.jallcom.2022.165228 doi /cbs_pica/cbs_olc/import_discovery/elsevier/einzuspielen/GBV00000000001790.pica (DE-627)ELV057696810 (ELSEVIER)S0925-8388(22)01619-X DE-627 ger DE-627 rakwb eng 630 VZ Park, Sang-Joon verfasserin aut Sol-gel-based metal-oxide thin-film transistors for high-performance flexible NMOS inverters 2022transfer abstract nicht spezifiziert zzz rdacontent nicht spezifiziert z rdamedia nicht spezifiziert zu rdacarrier High-performance metal-oxide thin-film transistors (oxide-TFTs) with high-k zirconium dioxide (ZrO2) dielectric and indium-gallium-zinc oxide (IGZO) semiconducting films were developed on flexible polyimide substrates. The flexible IGZO-TFTs fabricated using a simple and effective sol-gel-based solution-process combined with oxygen-enriched consecutive annealing at 200 °C, exhibited a high field-effect mobility of 13.6 cm2 V−1 s−1 at 5 V, on/off ratio of 1.05 × 106, gate leakage current of 2.7 × 10−11 A, and threshold voltage of 0.44 V. The effects of O2 annealing on the film quality of the sol-gel-based ZrO2 and IGZO were investigated by analyzing the crystallinity, morphology, and degree of metal-oxygen bonding states. Temperature-dependent steady-state direct-current measurements over the temperature range of 90–300 K, and time-domain non-quasi-static transient measurements with a minimized resistance-capacitance time constant were performed. Thus, the activation energy, density of states, interface trap density, and velocity distribution were determined to investigate the charge transport mechanism responsible for the high performance of the oxide- TFTs proposed in this study. An enhancement-load-type N-channel metal-oxide semiconductor (NMOS) inverter consisting of two oxide-TFTs fabricated via O2 annealing was demonstrated. The flexible NMOS inverter exhibited a high gain of 10.8 at 5 V and outstanding mechanical stability against 10,000 cycles of bending stresses at a strain of 30% without a passivation or buffer film. High-performance metal-oxide thin-film transistors (oxide-TFTs) with high-k zirconium dioxide (ZrO2) dielectric and indium-gallium-zinc oxide (IGZO) semiconducting films were developed on flexible polyimide substrates. The flexible IGZO-TFTs fabricated using a simple and effective sol-gel-based solution-process combined with oxygen-enriched consecutive annealing at 200 °C, exhibited a high field-effect mobility of 13.6 cm2 V−1 s−1 at 5 V, on/off ratio of 1.05 × 106, gate leakage current of 2.7 × 10−11 A, and threshold voltage of 0.44 V. The effects of O2 annealing on the film quality of the sol-gel-based ZrO2 and IGZO were investigated by analyzing the crystallinity, morphology, and degree of metal-oxygen bonding states. Temperature-dependent steady-state direct-current measurements over the temperature range of 90–300 K, and time-domain non-quasi-static transient measurements with a minimized resistance-capacitance time constant were performed. Thus, the activation energy, density of states, interface trap density, and velocity distribution were determined to investigate the charge transport mechanism responsible for the high performance of the oxide- TFTs proposed in this study. An enhancement-load-type N-channel metal-oxide semiconductor (NMOS) inverter consisting of two oxide-TFTs fabricated via O2 annealing was demonstrated. The flexible NMOS inverter exhibited a high gain of 10.8 at 5 V and outstanding mechanical stability against 10,000 cycles of bending stresses at a strain of 30% without a passivation or buffer film. Oxygen annealing Elsevier Sol-gel-based metal-oxide films Elsevier Oxide-TFT Elsevier Non-quasi-static transient measurement Elsevier Flexible NMOS inverter Elsevier Ha, Tae-Jun oth Enthalten in Elsevier Jacobs, Jacquelyn A. ELSEVIER Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners 2017 JAL : an interdisciplinary journal of materials science and solid-state chemistry and physics Lausanne (DE-627)ELV001115774 volume:912 year:2022 day:15 month:08 pages:0 https://doi.org/10.1016/j.jallcom.2022.165228 Volltext GBV_USEFLAG_U GBV_ELV SYSFLAG_U SSG-OLC-PHA AR 912 2022 15 0815 0 |
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Factors associated with canine resource guarding behaviour in the presence of people: A cross-sectional survey of dog owners |
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High-performance metal-oxide thin-film transistors (oxide-TFTs) with high-k zirconium dioxide (ZrO2) dielectric and indium-gallium-zinc oxide (IGZO) semiconducting films were developed on flexible polyimide substrates. The flexible IGZO-TFTs fabricated using a simple and effective sol-gel-based solution-process combined with oxygen-enriched consecutive annealing at 200 °C, exhibited a high field-effect mobility of 13.6 cm2 V−1 s−1 at 5 V, on/off ratio of 1.05 × 106, gate leakage current of 2.7 × 10−11 A, and threshold voltage of 0.44 V. The effects of O2 annealing on the film quality of the sol-gel-based ZrO2 and IGZO were investigated by analyzing the crystallinity, morphology, and degree of metal-oxygen bonding states. Temperature-dependent steady-state direct-current measurements over the temperature range of 90–300 K, and time-domain non-quasi-static transient measurements with a minimized resistance-capacitance time constant were performed. Thus, the activation energy, density of states, interface trap density, and velocity distribution were determined to investigate the charge transport mechanism responsible for the high performance of the oxide- TFTs proposed in this study. An enhancement-load-type N-channel metal-oxide semiconductor (NMOS) inverter consisting of two oxide-TFTs fabricated via O2 annealing was demonstrated. The flexible NMOS inverter exhibited a high gain of 10.8 at 5 V and outstanding mechanical stability against 10,000 cycles of bending stresses at a strain of 30% without a passivation or buffer film. |
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High-performance metal-oxide thin-film transistors (oxide-TFTs) with high-k zirconium dioxide (ZrO2) dielectric and indium-gallium-zinc oxide (IGZO) semiconducting films were developed on flexible polyimide substrates. The flexible IGZO-TFTs fabricated using a simple and effective sol-gel-based solution-process combined with oxygen-enriched consecutive annealing at 200 °C, exhibited a high field-effect mobility of 13.6 cm2 V−1 s−1 at 5 V, on/off ratio of 1.05 × 106, gate leakage current of 2.7 × 10−11 A, and threshold voltage of 0.44 V. The effects of O2 annealing on the film quality of the sol-gel-based ZrO2 and IGZO were investigated by analyzing the crystallinity, morphology, and degree of metal-oxygen bonding states. Temperature-dependent steady-state direct-current measurements over the temperature range of 90–300 K, and time-domain non-quasi-static transient measurements with a minimized resistance-capacitance time constant were performed. Thus, the activation energy, density of states, interface trap density, and velocity distribution were determined to investigate the charge transport mechanism responsible for the high performance of the oxide- TFTs proposed in this study. An enhancement-load-type N-channel metal-oxide semiconductor (NMOS) inverter consisting of two oxide-TFTs fabricated via O2 annealing was demonstrated. The flexible NMOS inverter exhibited a high gain of 10.8 at 5 V and outstanding mechanical stability against 10,000 cycles of bending stresses at a strain of 30% without a passivation or buffer film. |
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High-performance metal-oxide thin-film transistors (oxide-TFTs) with high-k zirconium dioxide (ZrO2) dielectric and indium-gallium-zinc oxide (IGZO) semiconducting films were developed on flexible polyimide substrates. The flexible IGZO-TFTs fabricated using a simple and effective sol-gel-based solution-process combined with oxygen-enriched consecutive annealing at 200 °C, exhibited a high field-effect mobility of 13.6 cm2 V−1 s−1 at 5 V, on/off ratio of 1.05 × 106, gate leakage current of 2.7 × 10−11 A, and threshold voltage of 0.44 V. The effects of O2 annealing on the film quality of the sol-gel-based ZrO2 and IGZO were investigated by analyzing the crystallinity, morphology, and degree of metal-oxygen bonding states. Temperature-dependent steady-state direct-current measurements over the temperature range of 90–300 K, and time-domain non-quasi-static transient measurements with a minimized resistance-capacitance time constant were performed. Thus, the activation energy, density of states, interface trap density, and velocity distribution were determined to investigate the charge transport mechanism responsible for the high performance of the oxide- TFTs proposed in this study. An enhancement-load-type N-channel metal-oxide semiconductor (NMOS) inverter consisting of two oxide-TFTs fabricated via O2 annealing was demonstrated. The flexible NMOS inverter exhibited a high gain of 10.8 at 5 V and outstanding mechanical stability against 10,000 cycles of bending stresses at a strain of 30% without a passivation or buffer film. |
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